Abstract

In this paper, a III-V/Silicon hybrid single mode laser operating at a long wavelength for photonic integration circuit is presented. The InGaAlAs gain structure is bonded onto a patterned silicon-on insulator wafer directly. The novel mode selected mechanism based on a slotted silicon waveguide is applied, which only need standard photolithography in the whole technological process. The side mode suppression ratio of larger than 20dB is obtained from experiments.

© 2013 OSA

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  1. H. Rong, R. Jones, A. Liu, O. Cohen, D. Hak, A. Fang, and M. Paniccia, “A continuous-wave Raman silicon laser,” Nature433(7027), 725–728 (2005).
    [CrossRef] [PubMed]
  2. S. G. Cloutier, P. A. Kossyrev, and J. Xu, “Optical gain and stimulated emission in periodic nanopatterned crystalline silicon,” Nat. Mater.4(12), 887–891 (2005).
    [CrossRef] [PubMed]
  3. L. Pavesi, L. Dal Negro, C. Mazzoleni, G. Franzò, and F. Priolo, “Optical gain in silicon nanocrystals,” Nature408(6811), 440–444 (2000).
    [CrossRef] [PubMed]
  4. A. Irrera, D. Pacifici, M. Miritello, G. Franzo, F. Priolo, F. Iacona, D. Sanfilippo, G. Di Stefano, and P. G. Fallica, “Electroluminescence properties of light emitting devices based on silicon nanocrystals,” Physica E16(3-4), 395–399 (2003).
    [CrossRef]
  5. J. Van Campenhout, L. Liu, P. Rojo Romeo, D. Van Thourhout, C. Seassal, P. Regreny, L. D. Cioccio, J.-M. Fedeli, and R. Baets, “A compact SOI-integrated multiwavelength laser source based on cascaded InP microdisks,” IEEE Photon. Technol. Lett.20(16), 1345–1347 (2008).
    [CrossRef]
  6. L. Liu, T. Spuesens, G. Roelkens, D. Van Thourhout, P. Regreny, and P. Rojo-Romeo, “A thermally tunable III–V compound semiconductor microdisk laser integrated on silicon-on-insulator circuits,” IEEE Photon. Technol. Lett.22(17), 1270–1272 (2010).
    [CrossRef]
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    [CrossRef]
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    [CrossRef] [PubMed]
  10. D. Liang and J. E. Bowers, “Recent progress in lasers on silicon,” Nat. Photonics4(8), 511–517 (2010).
    [CrossRef]
  11. T. Hong, G.-Z. Ran, T. Chen, J.-Q. Pan, W.-X. Chen, Y. Wang, Y.-B. Cheng, S. Liang, L.-J. Zhao, L.-Q. Yin, J.-H. Zhang, W. Wang, and G.-G. Qin, “A selective-area metal bonding InGaAsP-Si laser,” IEEE Photon. Technol. Lett.22(15), 1141–1143 (2010).
    [CrossRef]
  12. Q. Lu, W. Guo, D. Byrne, and F. John, “Design of slotted single-mode lasers suitable for photonic integration,” IEEE Photon. Technol. Lett.22(11), 787–789 (2010).
    [CrossRef]

2012 (1)

T. Hong, Y. Li, W. Chen, G. Z. Ran, G. G. Qin, H. Zhu, S. Liang, Y. Wang, J. Pan, and W. Wang, “Bonding InGaAsP/ITO/Si hybrid laser with ITO as cathode and light-coupling material,” IEEE Photon. Technol. Lett.24(8), 712–714 (2012).
[CrossRef]

2010 (4)

D. Liang and J. E. Bowers, “Recent progress in lasers on silicon,” Nat. Photonics4(8), 511–517 (2010).
[CrossRef]

T. Hong, G.-Z. Ran, T. Chen, J.-Q. Pan, W.-X. Chen, Y. Wang, Y.-B. Cheng, S. Liang, L.-J. Zhao, L.-Q. Yin, J.-H. Zhang, W. Wang, and G.-G. Qin, “A selective-area metal bonding InGaAsP-Si laser,” IEEE Photon. Technol. Lett.22(15), 1141–1143 (2010).
[CrossRef]

Q. Lu, W. Guo, D. Byrne, and F. John, “Design of slotted single-mode lasers suitable for photonic integration,” IEEE Photon. Technol. Lett.22(11), 787–789 (2010).
[CrossRef]

L. Liu, T. Spuesens, G. Roelkens, D. Van Thourhout, P. Regreny, and P. Rojo-Romeo, “A thermally tunable III–V compound semiconductor microdisk laser integrated on silicon-on-insulator circuits,” IEEE Photon. Technol. Lett.22(17), 1270–1272 (2010).
[CrossRef]

2008 (1)

J. Van Campenhout, L. Liu, P. Rojo Romeo, D. Van Thourhout, C. Seassal, P. Regreny, L. D. Cioccio, J.-M. Fedeli, and R. Baets, “A compact SOI-integrated multiwavelength laser source based on cascaded InP microdisks,” IEEE Photon. Technol. Lett.20(16), 1345–1347 (2008).
[CrossRef]

2006 (1)

2005 (2)

H. Rong, R. Jones, A. Liu, O. Cohen, D. Hak, A. Fang, and M. Paniccia, “A continuous-wave Raman silicon laser,” Nature433(7027), 725–728 (2005).
[CrossRef] [PubMed]

S. G. Cloutier, P. A. Kossyrev, and J. Xu, “Optical gain and stimulated emission in periodic nanopatterned crystalline silicon,” Nat. Mater.4(12), 887–891 (2005).
[CrossRef] [PubMed]

2003 (1)

A. Irrera, D. Pacifici, M. Miritello, G. Franzo, F. Priolo, F. Iacona, D. Sanfilippo, G. Di Stefano, and P. G. Fallica, “Electroluminescence properties of light emitting devices based on silicon nanocrystals,” Physica E16(3-4), 395–399 (2003).
[CrossRef]

2000 (1)

L. Pavesi, L. Dal Negro, C. Mazzoleni, G. Franzò, and F. Priolo, “Optical gain in silicon nanocrystals,” Nature408(6811), 440–444 (2000).
[CrossRef] [PubMed]

Baets, R.

J. Van Campenhout, L. Liu, P. Rojo Romeo, D. Van Thourhout, C. Seassal, P. Regreny, L. D. Cioccio, J.-M. Fedeli, and R. Baets, “A compact SOI-integrated multiwavelength laser source based on cascaded InP microdisks,” IEEE Photon. Technol. Lett.20(16), 1345–1347 (2008).
[CrossRef]

Bowers, J. E.

Byrne, D.

Q. Lu, W. Guo, D. Byrne, and F. John, “Design of slotted single-mode lasers suitable for photonic integration,” IEEE Photon. Technol. Lett.22(11), 787–789 (2010).
[CrossRef]

Chen, T.

T. Hong, G.-Z. Ran, T. Chen, J.-Q. Pan, W.-X. Chen, Y. Wang, Y.-B. Cheng, S. Liang, L.-J. Zhao, L.-Q. Yin, J.-H. Zhang, W. Wang, and G.-G. Qin, “A selective-area metal bonding InGaAsP-Si laser,” IEEE Photon. Technol. Lett.22(15), 1141–1143 (2010).
[CrossRef]

Chen, W.

T. Hong, Y. Li, W. Chen, G. Z. Ran, G. G. Qin, H. Zhu, S. Liang, Y. Wang, J. Pan, and W. Wang, “Bonding InGaAsP/ITO/Si hybrid laser with ITO as cathode and light-coupling material,” IEEE Photon. Technol. Lett.24(8), 712–714 (2012).
[CrossRef]

Chen, W.-X.

T. Hong, G.-Z. Ran, T. Chen, J.-Q. Pan, W.-X. Chen, Y. Wang, Y.-B. Cheng, S. Liang, L.-J. Zhao, L.-Q. Yin, J.-H. Zhang, W. Wang, and G.-G. Qin, “A selective-area metal bonding InGaAsP-Si laser,” IEEE Photon. Technol. Lett.22(15), 1141–1143 (2010).
[CrossRef]

Cheng, Y.-B.

T. Hong, G.-Z. Ran, T. Chen, J.-Q. Pan, W.-X. Chen, Y. Wang, Y.-B. Cheng, S. Liang, L.-J. Zhao, L.-Q. Yin, J.-H. Zhang, W. Wang, and G.-G. Qin, “A selective-area metal bonding InGaAsP-Si laser,” IEEE Photon. Technol. Lett.22(15), 1141–1143 (2010).
[CrossRef]

Cioccio, L. D.

J. Van Campenhout, L. Liu, P. Rojo Romeo, D. Van Thourhout, C. Seassal, P. Regreny, L. D. Cioccio, J.-M. Fedeli, and R. Baets, “A compact SOI-integrated multiwavelength laser source based on cascaded InP microdisks,” IEEE Photon. Technol. Lett.20(16), 1345–1347 (2008).
[CrossRef]

Cloutier, S. G.

S. G. Cloutier, P. A. Kossyrev, and J. Xu, “Optical gain and stimulated emission in periodic nanopatterned crystalline silicon,” Nat. Mater.4(12), 887–891 (2005).
[CrossRef] [PubMed]

Cohen, O.

A. W. Fang, H. Park, O. Cohen, R. Jones, M. J. Paniccia, and J. E. Bowers, “Electrically pumped hybrid AlGaInAs-silicon evanescent laser,” Opt. Express14(20), 9203–9210 (2006).
[CrossRef] [PubMed]

H. Rong, R. Jones, A. Liu, O. Cohen, D. Hak, A. Fang, and M. Paniccia, “A continuous-wave Raman silicon laser,” Nature433(7027), 725–728 (2005).
[CrossRef] [PubMed]

Dal Negro, L.

L. Pavesi, L. Dal Negro, C. Mazzoleni, G. Franzò, and F. Priolo, “Optical gain in silicon nanocrystals,” Nature408(6811), 440–444 (2000).
[CrossRef] [PubMed]

Di Stefano, G.

A. Irrera, D. Pacifici, M. Miritello, G. Franzo, F. Priolo, F. Iacona, D. Sanfilippo, G. Di Stefano, and P. G. Fallica, “Electroluminescence properties of light emitting devices based on silicon nanocrystals,” Physica E16(3-4), 395–399 (2003).
[CrossRef]

Fallica, P. G.

A. Irrera, D. Pacifici, M. Miritello, G. Franzo, F. Priolo, F. Iacona, D. Sanfilippo, G. Di Stefano, and P. G. Fallica, “Electroluminescence properties of light emitting devices based on silicon nanocrystals,” Physica E16(3-4), 395–399 (2003).
[CrossRef]

Fang, A.

H. Rong, R. Jones, A. Liu, O. Cohen, D. Hak, A. Fang, and M. Paniccia, “A continuous-wave Raman silicon laser,” Nature433(7027), 725–728 (2005).
[CrossRef] [PubMed]

Fang, A. W.

Fedeli, J.-M.

J. Van Campenhout, L. Liu, P. Rojo Romeo, D. Van Thourhout, C. Seassal, P. Regreny, L. D. Cioccio, J.-M. Fedeli, and R. Baets, “A compact SOI-integrated multiwavelength laser source based on cascaded InP microdisks,” IEEE Photon. Technol. Lett.20(16), 1345–1347 (2008).
[CrossRef]

Franzo, G.

A. Irrera, D. Pacifici, M. Miritello, G. Franzo, F. Priolo, F. Iacona, D. Sanfilippo, G. Di Stefano, and P. G. Fallica, “Electroluminescence properties of light emitting devices based on silicon nanocrystals,” Physica E16(3-4), 395–399 (2003).
[CrossRef]

Franzò, G.

L. Pavesi, L. Dal Negro, C. Mazzoleni, G. Franzò, and F. Priolo, “Optical gain in silicon nanocrystals,” Nature408(6811), 440–444 (2000).
[CrossRef] [PubMed]

Guo, W.

Q. Lu, W. Guo, D. Byrne, and F. John, “Design of slotted single-mode lasers suitable for photonic integration,” IEEE Photon. Technol. Lett.22(11), 787–789 (2010).
[CrossRef]

Hak, D.

H. Rong, R. Jones, A. Liu, O. Cohen, D. Hak, A. Fang, and M. Paniccia, “A continuous-wave Raman silicon laser,” Nature433(7027), 725–728 (2005).
[CrossRef] [PubMed]

Hong, T.

T. Hong, Y. Li, W. Chen, G. Z. Ran, G. G. Qin, H. Zhu, S. Liang, Y. Wang, J. Pan, and W. Wang, “Bonding InGaAsP/ITO/Si hybrid laser with ITO as cathode and light-coupling material,” IEEE Photon. Technol. Lett.24(8), 712–714 (2012).
[CrossRef]

T. Hong, G.-Z. Ran, T. Chen, J.-Q. Pan, W.-X. Chen, Y. Wang, Y.-B. Cheng, S. Liang, L.-J. Zhao, L.-Q. Yin, J.-H. Zhang, W. Wang, and G.-G. Qin, “A selective-area metal bonding InGaAsP-Si laser,” IEEE Photon. Technol. Lett.22(15), 1141–1143 (2010).
[CrossRef]

Iacona, F.

A. Irrera, D. Pacifici, M. Miritello, G. Franzo, F. Priolo, F. Iacona, D. Sanfilippo, G. Di Stefano, and P. G. Fallica, “Electroluminescence properties of light emitting devices based on silicon nanocrystals,” Physica E16(3-4), 395–399 (2003).
[CrossRef]

Irrera, A.

A. Irrera, D. Pacifici, M. Miritello, G. Franzo, F. Priolo, F. Iacona, D. Sanfilippo, G. Di Stefano, and P. G. Fallica, “Electroluminescence properties of light emitting devices based on silicon nanocrystals,” Physica E16(3-4), 395–399 (2003).
[CrossRef]

John, F.

Q. Lu, W. Guo, D. Byrne, and F. John, “Design of slotted single-mode lasers suitable for photonic integration,” IEEE Photon. Technol. Lett.22(11), 787–789 (2010).
[CrossRef]

Jones, R.

A. W. Fang, H. Park, O. Cohen, R. Jones, M. J. Paniccia, and J. E. Bowers, “Electrically pumped hybrid AlGaInAs-silicon evanescent laser,” Opt. Express14(20), 9203–9210 (2006).
[CrossRef] [PubMed]

H. Rong, R. Jones, A. Liu, O. Cohen, D. Hak, A. Fang, and M. Paniccia, “A continuous-wave Raman silicon laser,” Nature433(7027), 725–728 (2005).
[CrossRef] [PubMed]

Kossyrev, P. A.

S. G. Cloutier, P. A. Kossyrev, and J. Xu, “Optical gain and stimulated emission in periodic nanopatterned crystalline silicon,” Nat. Mater.4(12), 887–891 (2005).
[CrossRef] [PubMed]

Li, Y.

T. Hong, Y. Li, W. Chen, G. Z. Ran, G. G. Qin, H. Zhu, S. Liang, Y. Wang, J. Pan, and W. Wang, “Bonding InGaAsP/ITO/Si hybrid laser with ITO as cathode and light-coupling material,” IEEE Photon. Technol. Lett.24(8), 712–714 (2012).
[CrossRef]

Liang, D.

D. Liang and J. E. Bowers, “Recent progress in lasers on silicon,” Nat. Photonics4(8), 511–517 (2010).
[CrossRef]

Liang, S.

T. Hong, Y. Li, W. Chen, G. Z. Ran, G. G. Qin, H. Zhu, S. Liang, Y. Wang, J. Pan, and W. Wang, “Bonding InGaAsP/ITO/Si hybrid laser with ITO as cathode and light-coupling material,” IEEE Photon. Technol. Lett.24(8), 712–714 (2012).
[CrossRef]

T. Hong, G.-Z. Ran, T. Chen, J.-Q. Pan, W.-X. Chen, Y. Wang, Y.-B. Cheng, S. Liang, L.-J. Zhao, L.-Q. Yin, J.-H. Zhang, W. Wang, and G.-G. Qin, “A selective-area metal bonding InGaAsP-Si laser,” IEEE Photon. Technol. Lett.22(15), 1141–1143 (2010).
[CrossRef]

Liu, A.

H. Rong, R. Jones, A. Liu, O. Cohen, D. Hak, A. Fang, and M. Paniccia, “A continuous-wave Raman silicon laser,” Nature433(7027), 725–728 (2005).
[CrossRef] [PubMed]

Liu, L.

L. Liu, T. Spuesens, G. Roelkens, D. Van Thourhout, P. Regreny, and P. Rojo-Romeo, “A thermally tunable III–V compound semiconductor microdisk laser integrated on silicon-on-insulator circuits,” IEEE Photon. Technol. Lett.22(17), 1270–1272 (2010).
[CrossRef]

J. Van Campenhout, L. Liu, P. Rojo Romeo, D. Van Thourhout, C. Seassal, P. Regreny, L. D. Cioccio, J.-M. Fedeli, and R. Baets, “A compact SOI-integrated multiwavelength laser source based on cascaded InP microdisks,” IEEE Photon. Technol. Lett.20(16), 1345–1347 (2008).
[CrossRef]

Lu, Q.

Q. Lu, W. Guo, D. Byrne, and F. John, “Design of slotted single-mode lasers suitable for photonic integration,” IEEE Photon. Technol. Lett.22(11), 787–789 (2010).
[CrossRef]

Mazzoleni, C.

L. Pavesi, L. Dal Negro, C. Mazzoleni, G. Franzò, and F. Priolo, “Optical gain in silicon nanocrystals,” Nature408(6811), 440–444 (2000).
[CrossRef] [PubMed]

Miritello, M.

A. Irrera, D. Pacifici, M. Miritello, G. Franzo, F. Priolo, F. Iacona, D. Sanfilippo, G. Di Stefano, and P. G. Fallica, “Electroluminescence properties of light emitting devices based on silicon nanocrystals,” Physica E16(3-4), 395–399 (2003).
[CrossRef]

Pacifici, D.

A. Irrera, D. Pacifici, M. Miritello, G. Franzo, F. Priolo, F. Iacona, D. Sanfilippo, G. Di Stefano, and P. G. Fallica, “Electroluminescence properties of light emitting devices based on silicon nanocrystals,” Physica E16(3-4), 395–399 (2003).
[CrossRef]

Pan, J.

T. Hong, Y. Li, W. Chen, G. Z. Ran, G. G. Qin, H. Zhu, S. Liang, Y. Wang, J. Pan, and W. Wang, “Bonding InGaAsP/ITO/Si hybrid laser with ITO as cathode and light-coupling material,” IEEE Photon. Technol. Lett.24(8), 712–714 (2012).
[CrossRef]

Pan, J.-Q.

T. Hong, G.-Z. Ran, T. Chen, J.-Q. Pan, W.-X. Chen, Y. Wang, Y.-B. Cheng, S. Liang, L.-J. Zhao, L.-Q. Yin, J.-H. Zhang, W. Wang, and G.-G. Qin, “A selective-area metal bonding InGaAsP-Si laser,” IEEE Photon. Technol. Lett.22(15), 1141–1143 (2010).
[CrossRef]

Paniccia, M.

H. Rong, R. Jones, A. Liu, O. Cohen, D. Hak, A. Fang, and M. Paniccia, “A continuous-wave Raman silicon laser,” Nature433(7027), 725–728 (2005).
[CrossRef] [PubMed]

Paniccia, M. J.

Park, H.

Pavesi, L.

L. Pavesi, L. Dal Negro, C. Mazzoleni, G. Franzò, and F. Priolo, “Optical gain in silicon nanocrystals,” Nature408(6811), 440–444 (2000).
[CrossRef] [PubMed]

Priolo, F.

A. Irrera, D. Pacifici, M. Miritello, G. Franzo, F. Priolo, F. Iacona, D. Sanfilippo, G. Di Stefano, and P. G. Fallica, “Electroluminescence properties of light emitting devices based on silicon nanocrystals,” Physica E16(3-4), 395–399 (2003).
[CrossRef]

L. Pavesi, L. Dal Negro, C. Mazzoleni, G. Franzò, and F. Priolo, “Optical gain in silicon nanocrystals,” Nature408(6811), 440–444 (2000).
[CrossRef] [PubMed]

Qin, G. G.

T. Hong, Y. Li, W. Chen, G. Z. Ran, G. G. Qin, H. Zhu, S. Liang, Y. Wang, J. Pan, and W. Wang, “Bonding InGaAsP/ITO/Si hybrid laser with ITO as cathode and light-coupling material,” IEEE Photon. Technol. Lett.24(8), 712–714 (2012).
[CrossRef]

Qin, G.-G.

T. Hong, G.-Z. Ran, T. Chen, J.-Q. Pan, W.-X. Chen, Y. Wang, Y.-B. Cheng, S. Liang, L.-J. Zhao, L.-Q. Yin, J.-H. Zhang, W. Wang, and G.-G. Qin, “A selective-area metal bonding InGaAsP-Si laser,” IEEE Photon. Technol. Lett.22(15), 1141–1143 (2010).
[CrossRef]

Ran, G. Z.

T. Hong, Y. Li, W. Chen, G. Z. Ran, G. G. Qin, H. Zhu, S. Liang, Y. Wang, J. Pan, and W. Wang, “Bonding InGaAsP/ITO/Si hybrid laser with ITO as cathode and light-coupling material,” IEEE Photon. Technol. Lett.24(8), 712–714 (2012).
[CrossRef]

Ran, G.-Z.

T. Hong, G.-Z. Ran, T. Chen, J.-Q. Pan, W.-X. Chen, Y. Wang, Y.-B. Cheng, S. Liang, L.-J. Zhao, L.-Q. Yin, J.-H. Zhang, W. Wang, and G.-G. Qin, “A selective-area metal bonding InGaAsP-Si laser,” IEEE Photon. Technol. Lett.22(15), 1141–1143 (2010).
[CrossRef]

Regreny, P.

L. Liu, T. Spuesens, G. Roelkens, D. Van Thourhout, P. Regreny, and P. Rojo-Romeo, “A thermally tunable III–V compound semiconductor microdisk laser integrated on silicon-on-insulator circuits,” IEEE Photon. Technol. Lett.22(17), 1270–1272 (2010).
[CrossRef]

J. Van Campenhout, L. Liu, P. Rojo Romeo, D. Van Thourhout, C. Seassal, P. Regreny, L. D. Cioccio, J.-M. Fedeli, and R. Baets, “A compact SOI-integrated multiwavelength laser source based on cascaded InP microdisks,” IEEE Photon. Technol. Lett.20(16), 1345–1347 (2008).
[CrossRef]

Roelkens, G.

L. Liu, T. Spuesens, G. Roelkens, D. Van Thourhout, P. Regreny, and P. Rojo-Romeo, “A thermally tunable III–V compound semiconductor microdisk laser integrated on silicon-on-insulator circuits,” IEEE Photon. Technol. Lett.22(17), 1270–1272 (2010).
[CrossRef]

Rojo Romeo, P.

J. Van Campenhout, L. Liu, P. Rojo Romeo, D. Van Thourhout, C. Seassal, P. Regreny, L. D. Cioccio, J.-M. Fedeli, and R. Baets, “A compact SOI-integrated multiwavelength laser source based on cascaded InP microdisks,” IEEE Photon. Technol. Lett.20(16), 1345–1347 (2008).
[CrossRef]

Rojo-Romeo, P.

L. Liu, T. Spuesens, G. Roelkens, D. Van Thourhout, P. Regreny, and P. Rojo-Romeo, “A thermally tunable III–V compound semiconductor microdisk laser integrated on silicon-on-insulator circuits,” IEEE Photon. Technol. Lett.22(17), 1270–1272 (2010).
[CrossRef]

Rong, H.

H. Rong, R. Jones, A. Liu, O. Cohen, D. Hak, A. Fang, and M. Paniccia, “A continuous-wave Raman silicon laser,” Nature433(7027), 725–728 (2005).
[CrossRef] [PubMed]

Sanfilippo, D.

A. Irrera, D. Pacifici, M. Miritello, G. Franzo, F. Priolo, F. Iacona, D. Sanfilippo, G. Di Stefano, and P. G. Fallica, “Electroluminescence properties of light emitting devices based on silicon nanocrystals,” Physica E16(3-4), 395–399 (2003).
[CrossRef]

Seassal, C.

J. Van Campenhout, L. Liu, P. Rojo Romeo, D. Van Thourhout, C. Seassal, P. Regreny, L. D. Cioccio, J.-M. Fedeli, and R. Baets, “A compact SOI-integrated multiwavelength laser source based on cascaded InP microdisks,” IEEE Photon. Technol. Lett.20(16), 1345–1347 (2008).
[CrossRef]

Spuesens, T.

L. Liu, T. Spuesens, G. Roelkens, D. Van Thourhout, P. Regreny, and P. Rojo-Romeo, “A thermally tunable III–V compound semiconductor microdisk laser integrated on silicon-on-insulator circuits,” IEEE Photon. Technol. Lett.22(17), 1270–1272 (2010).
[CrossRef]

Van Campenhout, J.

J. Van Campenhout, L. Liu, P. Rojo Romeo, D. Van Thourhout, C. Seassal, P. Regreny, L. D. Cioccio, J.-M. Fedeli, and R. Baets, “A compact SOI-integrated multiwavelength laser source based on cascaded InP microdisks,” IEEE Photon. Technol. Lett.20(16), 1345–1347 (2008).
[CrossRef]

Van Thourhout, D.

L. Liu, T. Spuesens, G. Roelkens, D. Van Thourhout, P. Regreny, and P. Rojo-Romeo, “A thermally tunable III–V compound semiconductor microdisk laser integrated on silicon-on-insulator circuits,” IEEE Photon. Technol. Lett.22(17), 1270–1272 (2010).
[CrossRef]

J. Van Campenhout, L. Liu, P. Rojo Romeo, D. Van Thourhout, C. Seassal, P. Regreny, L. D. Cioccio, J.-M. Fedeli, and R. Baets, “A compact SOI-integrated multiwavelength laser source based on cascaded InP microdisks,” IEEE Photon. Technol. Lett.20(16), 1345–1347 (2008).
[CrossRef]

Wang, W.

T. Hong, Y. Li, W. Chen, G. Z. Ran, G. G. Qin, H. Zhu, S. Liang, Y. Wang, J. Pan, and W. Wang, “Bonding InGaAsP/ITO/Si hybrid laser with ITO as cathode and light-coupling material,” IEEE Photon. Technol. Lett.24(8), 712–714 (2012).
[CrossRef]

T. Hong, G.-Z. Ran, T. Chen, J.-Q. Pan, W.-X. Chen, Y. Wang, Y.-B. Cheng, S. Liang, L.-J. Zhao, L.-Q. Yin, J.-H. Zhang, W. Wang, and G.-G. Qin, “A selective-area metal bonding InGaAsP-Si laser,” IEEE Photon. Technol. Lett.22(15), 1141–1143 (2010).
[CrossRef]

Wang, Y.

T. Hong, Y. Li, W. Chen, G. Z. Ran, G. G. Qin, H. Zhu, S. Liang, Y. Wang, J. Pan, and W. Wang, “Bonding InGaAsP/ITO/Si hybrid laser with ITO as cathode and light-coupling material,” IEEE Photon. Technol. Lett.24(8), 712–714 (2012).
[CrossRef]

T. Hong, G.-Z. Ran, T. Chen, J.-Q. Pan, W.-X. Chen, Y. Wang, Y.-B. Cheng, S. Liang, L.-J. Zhao, L.-Q. Yin, J.-H. Zhang, W. Wang, and G.-G. Qin, “A selective-area metal bonding InGaAsP-Si laser,” IEEE Photon. Technol. Lett.22(15), 1141–1143 (2010).
[CrossRef]

Xu, J.

S. G. Cloutier, P. A. Kossyrev, and J. Xu, “Optical gain and stimulated emission in periodic nanopatterned crystalline silicon,” Nat. Mater.4(12), 887–891 (2005).
[CrossRef] [PubMed]

Yin, L.-Q.

T. Hong, G.-Z. Ran, T. Chen, J.-Q. Pan, W.-X. Chen, Y. Wang, Y.-B. Cheng, S. Liang, L.-J. Zhao, L.-Q. Yin, J.-H. Zhang, W. Wang, and G.-G. Qin, “A selective-area metal bonding InGaAsP-Si laser,” IEEE Photon. Technol. Lett.22(15), 1141–1143 (2010).
[CrossRef]

Zhang, J.-H.

T. Hong, G.-Z. Ran, T. Chen, J.-Q. Pan, W.-X. Chen, Y. Wang, Y.-B. Cheng, S. Liang, L.-J. Zhao, L.-Q. Yin, J.-H. Zhang, W. Wang, and G.-G. Qin, “A selective-area metal bonding InGaAsP-Si laser,” IEEE Photon. Technol. Lett.22(15), 1141–1143 (2010).
[CrossRef]

Zhao, L.-J.

T. Hong, G.-Z. Ran, T. Chen, J.-Q. Pan, W.-X. Chen, Y. Wang, Y.-B. Cheng, S. Liang, L.-J. Zhao, L.-Q. Yin, J.-H. Zhang, W. Wang, and G.-G. Qin, “A selective-area metal bonding InGaAsP-Si laser,” IEEE Photon. Technol. Lett.22(15), 1141–1143 (2010).
[CrossRef]

Zhu, H.

T. Hong, Y. Li, W. Chen, G. Z. Ran, G. G. Qin, H. Zhu, S. Liang, Y. Wang, J. Pan, and W. Wang, “Bonding InGaAsP/ITO/Si hybrid laser with ITO as cathode and light-coupling material,” IEEE Photon. Technol. Lett.24(8), 712–714 (2012).
[CrossRef]

IEEE Photon. Technol. Lett. (5)

J. Van Campenhout, L. Liu, P. Rojo Romeo, D. Van Thourhout, C. Seassal, P. Regreny, L. D. Cioccio, J.-M. Fedeli, and R. Baets, “A compact SOI-integrated multiwavelength laser source based on cascaded InP microdisks,” IEEE Photon. Technol. Lett.20(16), 1345–1347 (2008).
[CrossRef]

L. Liu, T. Spuesens, G. Roelkens, D. Van Thourhout, P. Regreny, and P. Rojo-Romeo, “A thermally tunable III–V compound semiconductor microdisk laser integrated on silicon-on-insulator circuits,” IEEE Photon. Technol. Lett.22(17), 1270–1272 (2010).
[CrossRef]

T. Hong, Y. Li, W. Chen, G. Z. Ran, G. G. Qin, H. Zhu, S. Liang, Y. Wang, J. Pan, and W. Wang, “Bonding InGaAsP/ITO/Si hybrid laser with ITO as cathode and light-coupling material,” IEEE Photon. Technol. Lett.24(8), 712–714 (2012).
[CrossRef]

T. Hong, G.-Z. Ran, T. Chen, J.-Q. Pan, W.-X. Chen, Y. Wang, Y.-B. Cheng, S. Liang, L.-J. Zhao, L.-Q. Yin, J.-H. Zhang, W. Wang, and G.-G. Qin, “A selective-area metal bonding InGaAsP-Si laser,” IEEE Photon. Technol. Lett.22(15), 1141–1143 (2010).
[CrossRef]

Q. Lu, W. Guo, D. Byrne, and F. John, “Design of slotted single-mode lasers suitable for photonic integration,” IEEE Photon. Technol. Lett.22(11), 787–789 (2010).
[CrossRef]

Nat. Mater. (1)

S. G. Cloutier, P. A. Kossyrev, and J. Xu, “Optical gain and stimulated emission in periodic nanopatterned crystalline silicon,” Nat. Mater.4(12), 887–891 (2005).
[CrossRef] [PubMed]

Nat. Photonics (1)

D. Liang and J. E. Bowers, “Recent progress in lasers on silicon,” Nat. Photonics4(8), 511–517 (2010).
[CrossRef]

Nature (2)

H. Rong, R. Jones, A. Liu, O. Cohen, D. Hak, A. Fang, and M. Paniccia, “A continuous-wave Raman silicon laser,” Nature433(7027), 725–728 (2005).
[CrossRef] [PubMed]

L. Pavesi, L. Dal Negro, C. Mazzoleni, G. Franzò, and F. Priolo, “Optical gain in silicon nanocrystals,” Nature408(6811), 440–444 (2000).
[CrossRef] [PubMed]

Opt. Express (1)

Physica E (1)

A. Irrera, D. Pacifici, M. Miritello, G. Franzo, F. Priolo, F. Iacona, D. Sanfilippo, G. Di Stefano, and P. G. Fallica, “Electroluminescence properties of light emitting devices based on silicon nanocrystals,” Physica E16(3-4), 395–399 (2003).
[CrossRef]

Other (1)

A. W. Fang, D. Liang, J. Peters, H. Chen, and J. E. Bowers, “Design and implementation of phase-shifted distributed feedback lasers on the hybrid silicon platform,” OFC/NFOEC, OSA Technical Digest (CD) (Optical Society of America, 2011), paper JThA32.

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Figures (6)

Fig. 1
Fig. 1

(a) Three-dimensional schematic structure, (b) Si strip waveguide and (c) y-z cross section of the slotted single mode hybrid laser.

Fig. 2
Fig. 2

Contour plot of simulated amplitude reñection versus (a) slot period and wavelength with slot width of 1100nm and (b) slot width and wavelength with slot period of 5700nm.

Fig. 3
Fig. 3

(a) SEM of the cross-section of III–V material bonded on a Si strip waveguide. (b) The electrode pads distribution.

Fig. 4
Fig. 4

(a) Infrared micrographs taken from an end facet of the devices. (b) The fundamental mode field distribution.

Fig. 5
Fig. 5

Light output power and voltage versus continuous injection current.

Fig. 6
Fig. 6

Spectrums at various injection currents.

Tables (1)

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Table 1 Layer structure

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