Abstract

We studied the transient behaviors of current-injection quantum-dot microdisk lasers at room temperature. Unique optical responses were observed, including the suppression of relaxation oscillations and fast turn-on. With the help of rate-equation modeling, the suppressed relaxation oscillations are attributed to the enhanced spontaneous emission factor in microdisk lasers. Short turn-on time, around 1 ns without pre-bias, results from the reduced carrier lifetime caused by the Purcell effect and increased nonradiative recombination rate due to higher surface/volume ratio. With short turn-on time, a large-signal direct modulation experiment at 1 Gbps is demonstrated. Modal transient behavior was also investigated under various temperatures from 100 to 300 K. Both of the transient lasing and steady-state lasing from side modes are suppressed at temperatures higher than 250K. Therefore, the quantum-dot microdisk lasers show the potential of single-mode operation under high-speed modulation at room temperature.

© 2012 OSA

Full Article  |  PDF Article

References

  • View by:
  • |
  • |
  • |

  1. T. Baba, M. Fujita, A. Sakai, M. Kihara, and R. Watanabe, “Lasing characteristics of GaInAsP-InP strained quantum-well microdisk injection lasers with diameter of 2–10 μm,” IEEE Photon. Technol. Lett. 9(7), 878–880 (1997).
    [CrossRef]
  2. M. Fujita, A. Sakai, and T. Baba, “Ultrasmall and ultralow threshold GaInAsP-InP microdisk injection lasers: design, fabrication, lasing characteristics, and spontaneous emission factor,” IEEE J. Sel. Top. Quantum Electron. 5(3), 673–681 (1999).
    [CrossRef]
  3. D. Bimberg, M. Grundmann, and N. N. Ledentsov, Quantum Dot Heterostructures (John Wiley & Sons, 1999).
  4. M.-H. Mao, H. C. Chien, J. Z. Hong, and C. Y. Cheng, “Room-temperature low-threshold current-injection InGaAs quantum-dot microdisk lasers with single-mode emission,” Opt. Express 19(15), 14145–14151 (2011).
    [CrossRef] [PubMed]
  5. J. Van Campenhout, P. Rojo Romeo, P. Regreny, C. Seassal, D. Van Thourhout, S. Verstuyft, L. Di Cioccio, J.-M. Fedeli, C. Lagahe, and R. Baets, “Electrically pumped InP-based microdisk lasers integrated with a nanophotonic silicon-on-insulator waveguide circuit,” Opt. Express 15(11), 6744–6749 (2007).
    [CrossRef] [PubMed]
  6. L. Liu, J. V. Campenhout, G. Roelkens, D. V. Thourhout, P. Rojo-Romeo, P. Regreny, C. Seassal, J. Fédéli, and R. Baets, “Ultralow-power all-optical wavelength conversion in a silicon-on-insulator waveguide based on a heterogeneously integrated III-V microdisk laser,” Appl. Phys. Lett. 93(6), 061107 (2008).
    [CrossRef]
  7. L. Liu, J. Van Campenhout, G. Roelkens, R. A. Soref, D. Van Thourhout, P. Rojo-Romeo, P. Regreny, C. Seassal, J. M. Fédéli, and R. Baets, “Carrier-injection-based electro-optic modulator on silicon-on-insulator with a heterogeneously integrated III-V microdisk cavity,” Opt. Lett. 33(21), 2518–2520 (2008).
    [CrossRef] [PubMed]
  8. K. J. Luo, J. Y. Xu, H. Cao, Y. Ma, S. H. Chang, S. T. Ho, and G. S. Solomon, “Dynamics of GaAs/AlGaAs microdisk lasers,” Appl. Phys. Lett. 77(15), 2304–2306 (2000).
    [CrossRef]
  9. K. J. Luo, J. Y. Xu, H. Cao, Y. Ma, S. H. Chang, S. T. Ho, and G. S. Solomon, “Ultrafast dynamics of InAs/GaAs quantum-dot microdisk lasers,” Appl. Phys. Lett. 78(22), 3397–3399 (2001).
    [CrossRef]
  10. S. M. K. Thiyagarajan and A. F. J. Levi, “Dynamic behavior of scaled microdisk laser,” Solid-State Electron. 45(10), 1821–1826 (2001).
    [CrossRef]
  11. R. Ushigome, M. Fujita, A. Sakai, T. Baba, and Y. Kokubun, “GaInAsP microdisk injection laser with benzocyclobutene polymer cladding and its athermal effect,” Jpn. J. Appl. Phys. 41(Part 1, No. 11A), 6364–6369 (2002).
    [CrossRef]
  12. S. M. K. Thiyagarajan and A. F. J. Levi, “High-speed response of optically-pumped InGaAs/InGaAsP microdisk lasers,” Electron. Lett. 37(3), 175–176 (2001).
    [CrossRef]
  13. T. Baba and D. Sano, “Low-threshold lasing and Purcell effect in microdisk lasers at room temperature,” IEEE J. Sel. Top. Quantum Electron. 9(5), 1340–1346 (2003).
    [CrossRef]
  14. B. Gayral and J. M. Gérard, “Strong Purcell effect for InAs quantum boxes in high-Q wet-etched microdisks,” Physica E 7(3-4), 641–645 (2000).
    [CrossRef]
  15. W. Fang, J. Y. Xu, A. Yamilov, H. Cao, Y. Ma, S. T. Ho, and G. S. Solomon, “Large enhancement of spontaneous emission rates of InAs quantum dots in GaAs microdisks,” Opt. Lett. 27(11), 948–950 (2002).
    [CrossRef] [PubMed]
  16. L. A. Coldren and S. W. Corzine, Diode Lasers and Photonic Integrated Circuits (John Wiley & Sons, 1995), chap. 2.
  17. M. Colocci, A. Vinattieri, L. Lippi, F. Bogani, M. Rosa-Clot, S. Taddei, A. Bosacchi, S. Franchi, and P. Frigeri, “Controlled tuning of the radiative lifetime in InAs self-assembled quantum dots through vertical ordering,” Appl. Phys. Lett. 74(4), 564–566 (1999).
    [CrossRef]
  18. T. Ide, T. Baba, J. Tatebayashi, S. Iwamoto, T. Nakaoka, and Y. Arakawa, “Lasing characteristics of InAs quantum-dot microdisk from 3 K to roomtemperature,” Appl. Phys. Lett. 85(8), 1326–1328 (2004).
    [CrossRef]
  19. D. G. Deppe and H. Huang, “Quantum-dot vertical-cavity surface-emitting laser based on the Purcell effect,” Appl. Phys. Lett. 75(22), 3455–3457 (1999).
    [CrossRef]
  20. A. Fiore, P. Borri, W. Langbein, J. M. Hvam, U. Oesterle, R. Houdre, R. P. Stanley, and M. Ilegems, “Time-resolved optical characterization of InAs/InGaAs quantum dots emitting at 1.3 μm,” Appl. Phys. Lett. 76(23), 3430–3432 (2000).
    [CrossRef]

2011 (1)

2008 (2)

L. Liu, J. V. Campenhout, G. Roelkens, D. V. Thourhout, P. Rojo-Romeo, P. Regreny, C. Seassal, J. Fédéli, and R. Baets, “Ultralow-power all-optical wavelength conversion in a silicon-on-insulator waveguide based on a heterogeneously integrated III-V microdisk laser,” Appl. Phys. Lett. 93(6), 061107 (2008).
[CrossRef]

L. Liu, J. Van Campenhout, G. Roelkens, R. A. Soref, D. Van Thourhout, P. Rojo-Romeo, P. Regreny, C. Seassal, J. M. Fédéli, and R. Baets, “Carrier-injection-based electro-optic modulator on silicon-on-insulator with a heterogeneously integrated III-V microdisk cavity,” Opt. Lett. 33(21), 2518–2520 (2008).
[CrossRef] [PubMed]

2007 (1)

2004 (1)

T. Ide, T. Baba, J. Tatebayashi, S. Iwamoto, T. Nakaoka, and Y. Arakawa, “Lasing characteristics of InAs quantum-dot microdisk from 3 K to roomtemperature,” Appl. Phys. Lett. 85(8), 1326–1328 (2004).
[CrossRef]

2003 (1)

T. Baba and D. Sano, “Low-threshold lasing and Purcell effect in microdisk lasers at room temperature,” IEEE J. Sel. Top. Quantum Electron. 9(5), 1340–1346 (2003).
[CrossRef]

2002 (2)

R. Ushigome, M. Fujita, A. Sakai, T. Baba, and Y. Kokubun, “GaInAsP microdisk injection laser with benzocyclobutene polymer cladding and its athermal effect,” Jpn. J. Appl. Phys. 41(Part 1, No. 11A), 6364–6369 (2002).
[CrossRef]

W. Fang, J. Y. Xu, A. Yamilov, H. Cao, Y. Ma, S. T. Ho, and G. S. Solomon, “Large enhancement of spontaneous emission rates of InAs quantum dots in GaAs microdisks,” Opt. Lett. 27(11), 948–950 (2002).
[CrossRef] [PubMed]

2001 (3)

S. M. K. Thiyagarajan and A. F. J. Levi, “High-speed response of optically-pumped InGaAs/InGaAsP microdisk lasers,” Electron. Lett. 37(3), 175–176 (2001).
[CrossRef]

K. J. Luo, J. Y. Xu, H. Cao, Y. Ma, S. H. Chang, S. T. Ho, and G. S. Solomon, “Ultrafast dynamics of InAs/GaAs quantum-dot microdisk lasers,” Appl. Phys. Lett. 78(22), 3397–3399 (2001).
[CrossRef]

S. M. K. Thiyagarajan and A. F. J. Levi, “Dynamic behavior of scaled microdisk laser,” Solid-State Electron. 45(10), 1821–1826 (2001).
[CrossRef]

2000 (3)

B. Gayral and J. M. Gérard, “Strong Purcell effect for InAs quantum boxes in high-Q wet-etched microdisks,” Physica E 7(3-4), 641–645 (2000).
[CrossRef]

K. J. Luo, J. Y. Xu, H. Cao, Y. Ma, S. H. Chang, S. T. Ho, and G. S. Solomon, “Dynamics of GaAs/AlGaAs microdisk lasers,” Appl. Phys. Lett. 77(15), 2304–2306 (2000).
[CrossRef]

A. Fiore, P. Borri, W. Langbein, J. M. Hvam, U. Oesterle, R. Houdre, R. P. Stanley, and M. Ilegems, “Time-resolved optical characterization of InAs/InGaAs quantum dots emitting at 1.3 μm,” Appl. Phys. Lett. 76(23), 3430–3432 (2000).
[CrossRef]

1999 (3)

D. G. Deppe and H. Huang, “Quantum-dot vertical-cavity surface-emitting laser based on the Purcell effect,” Appl. Phys. Lett. 75(22), 3455–3457 (1999).
[CrossRef]

M. Colocci, A. Vinattieri, L. Lippi, F. Bogani, M. Rosa-Clot, S. Taddei, A. Bosacchi, S. Franchi, and P. Frigeri, “Controlled tuning of the radiative lifetime in InAs self-assembled quantum dots through vertical ordering,” Appl. Phys. Lett. 74(4), 564–566 (1999).
[CrossRef]

M. Fujita, A. Sakai, and T. Baba, “Ultrasmall and ultralow threshold GaInAsP-InP microdisk injection lasers: design, fabrication, lasing characteristics, and spontaneous emission factor,” IEEE J. Sel. Top. Quantum Electron. 5(3), 673–681 (1999).
[CrossRef]

1997 (1)

T. Baba, M. Fujita, A. Sakai, M. Kihara, and R. Watanabe, “Lasing characteristics of GaInAsP-InP strained quantum-well microdisk injection lasers with diameter of 2–10 μm,” IEEE Photon. Technol. Lett. 9(7), 878–880 (1997).
[CrossRef]

Arakawa, Y.

T. Ide, T. Baba, J. Tatebayashi, S. Iwamoto, T. Nakaoka, and Y. Arakawa, “Lasing characteristics of InAs quantum-dot microdisk from 3 K to roomtemperature,” Appl. Phys. Lett. 85(8), 1326–1328 (2004).
[CrossRef]

Baba, T.

T. Ide, T. Baba, J. Tatebayashi, S. Iwamoto, T. Nakaoka, and Y. Arakawa, “Lasing characteristics of InAs quantum-dot microdisk from 3 K to roomtemperature,” Appl. Phys. Lett. 85(8), 1326–1328 (2004).
[CrossRef]

T. Baba and D. Sano, “Low-threshold lasing and Purcell effect in microdisk lasers at room temperature,” IEEE J. Sel. Top. Quantum Electron. 9(5), 1340–1346 (2003).
[CrossRef]

R. Ushigome, M. Fujita, A. Sakai, T. Baba, and Y. Kokubun, “GaInAsP microdisk injection laser with benzocyclobutene polymer cladding and its athermal effect,” Jpn. J. Appl. Phys. 41(Part 1, No. 11A), 6364–6369 (2002).
[CrossRef]

M. Fujita, A. Sakai, and T. Baba, “Ultrasmall and ultralow threshold GaInAsP-InP microdisk injection lasers: design, fabrication, lasing characteristics, and spontaneous emission factor,” IEEE J. Sel. Top. Quantum Electron. 5(3), 673–681 (1999).
[CrossRef]

T. Baba, M. Fujita, A. Sakai, M. Kihara, and R. Watanabe, “Lasing characteristics of GaInAsP-InP strained quantum-well microdisk injection lasers with diameter of 2–10 μm,” IEEE Photon. Technol. Lett. 9(7), 878–880 (1997).
[CrossRef]

Baets, R.

Bogani, F.

M. Colocci, A. Vinattieri, L. Lippi, F. Bogani, M. Rosa-Clot, S. Taddei, A. Bosacchi, S. Franchi, and P. Frigeri, “Controlled tuning of the radiative lifetime in InAs self-assembled quantum dots through vertical ordering,” Appl. Phys. Lett. 74(4), 564–566 (1999).
[CrossRef]

Borri, P.

A. Fiore, P. Borri, W. Langbein, J. M. Hvam, U. Oesterle, R. Houdre, R. P. Stanley, and M. Ilegems, “Time-resolved optical characterization of InAs/InGaAs quantum dots emitting at 1.3 μm,” Appl. Phys. Lett. 76(23), 3430–3432 (2000).
[CrossRef]

Bosacchi, A.

M. Colocci, A. Vinattieri, L. Lippi, F. Bogani, M. Rosa-Clot, S. Taddei, A. Bosacchi, S. Franchi, and P. Frigeri, “Controlled tuning of the radiative lifetime in InAs self-assembled quantum dots through vertical ordering,” Appl. Phys. Lett. 74(4), 564–566 (1999).
[CrossRef]

Campenhout, J. V.

L. Liu, J. V. Campenhout, G. Roelkens, D. V. Thourhout, P. Rojo-Romeo, P. Regreny, C. Seassal, J. Fédéli, and R. Baets, “Ultralow-power all-optical wavelength conversion in a silicon-on-insulator waveguide based on a heterogeneously integrated III-V microdisk laser,” Appl. Phys. Lett. 93(6), 061107 (2008).
[CrossRef]

Cao, H.

W. Fang, J. Y. Xu, A. Yamilov, H. Cao, Y. Ma, S. T. Ho, and G. S. Solomon, “Large enhancement of spontaneous emission rates of InAs quantum dots in GaAs microdisks,” Opt. Lett. 27(11), 948–950 (2002).
[CrossRef] [PubMed]

K. J. Luo, J. Y. Xu, H. Cao, Y. Ma, S. H. Chang, S. T. Ho, and G. S. Solomon, “Ultrafast dynamics of InAs/GaAs quantum-dot microdisk lasers,” Appl. Phys. Lett. 78(22), 3397–3399 (2001).
[CrossRef]

K. J. Luo, J. Y. Xu, H. Cao, Y. Ma, S. H. Chang, S. T. Ho, and G. S. Solomon, “Dynamics of GaAs/AlGaAs microdisk lasers,” Appl. Phys. Lett. 77(15), 2304–2306 (2000).
[CrossRef]

Chang, S. H.

K. J. Luo, J. Y. Xu, H. Cao, Y. Ma, S. H. Chang, S. T. Ho, and G. S. Solomon, “Ultrafast dynamics of InAs/GaAs quantum-dot microdisk lasers,” Appl. Phys. Lett. 78(22), 3397–3399 (2001).
[CrossRef]

K. J. Luo, J. Y. Xu, H. Cao, Y. Ma, S. H. Chang, S. T. Ho, and G. S. Solomon, “Dynamics of GaAs/AlGaAs microdisk lasers,” Appl. Phys. Lett. 77(15), 2304–2306 (2000).
[CrossRef]

Cheng, C. Y.

Chien, H. C.

Colocci, M.

M. Colocci, A. Vinattieri, L. Lippi, F. Bogani, M. Rosa-Clot, S. Taddei, A. Bosacchi, S. Franchi, and P. Frigeri, “Controlled tuning of the radiative lifetime in InAs self-assembled quantum dots through vertical ordering,” Appl. Phys. Lett. 74(4), 564–566 (1999).
[CrossRef]

Deppe, D. G.

D. G. Deppe and H. Huang, “Quantum-dot vertical-cavity surface-emitting laser based on the Purcell effect,” Appl. Phys. Lett. 75(22), 3455–3457 (1999).
[CrossRef]

Di Cioccio, L.

Fang, W.

Fedeli, J.-M.

Fédéli, J.

L. Liu, J. V. Campenhout, G. Roelkens, D. V. Thourhout, P. Rojo-Romeo, P. Regreny, C. Seassal, J. Fédéli, and R. Baets, “Ultralow-power all-optical wavelength conversion in a silicon-on-insulator waveguide based on a heterogeneously integrated III-V microdisk laser,” Appl. Phys. Lett. 93(6), 061107 (2008).
[CrossRef]

Fédéli, J. M.

Fiore, A.

A. Fiore, P. Borri, W. Langbein, J. M. Hvam, U. Oesterle, R. Houdre, R. P. Stanley, and M. Ilegems, “Time-resolved optical characterization of InAs/InGaAs quantum dots emitting at 1.3 μm,” Appl. Phys. Lett. 76(23), 3430–3432 (2000).
[CrossRef]

Franchi, S.

M. Colocci, A. Vinattieri, L. Lippi, F. Bogani, M. Rosa-Clot, S. Taddei, A. Bosacchi, S. Franchi, and P. Frigeri, “Controlled tuning of the radiative lifetime in InAs self-assembled quantum dots through vertical ordering,” Appl. Phys. Lett. 74(4), 564–566 (1999).
[CrossRef]

Frigeri, P.

M. Colocci, A. Vinattieri, L. Lippi, F. Bogani, M. Rosa-Clot, S. Taddei, A. Bosacchi, S. Franchi, and P. Frigeri, “Controlled tuning of the radiative lifetime in InAs self-assembled quantum dots through vertical ordering,” Appl. Phys. Lett. 74(4), 564–566 (1999).
[CrossRef]

Fujita, M.

R. Ushigome, M. Fujita, A. Sakai, T. Baba, and Y. Kokubun, “GaInAsP microdisk injection laser with benzocyclobutene polymer cladding and its athermal effect,” Jpn. J. Appl. Phys. 41(Part 1, No. 11A), 6364–6369 (2002).
[CrossRef]

M. Fujita, A. Sakai, and T. Baba, “Ultrasmall and ultralow threshold GaInAsP-InP microdisk injection lasers: design, fabrication, lasing characteristics, and spontaneous emission factor,” IEEE J. Sel. Top. Quantum Electron. 5(3), 673–681 (1999).
[CrossRef]

T. Baba, M. Fujita, A. Sakai, M. Kihara, and R. Watanabe, “Lasing characteristics of GaInAsP-InP strained quantum-well microdisk injection lasers with diameter of 2–10 μm,” IEEE Photon. Technol. Lett. 9(7), 878–880 (1997).
[CrossRef]

Gayral, B.

B. Gayral and J. M. Gérard, “Strong Purcell effect for InAs quantum boxes in high-Q wet-etched microdisks,” Physica E 7(3-4), 641–645 (2000).
[CrossRef]

Gérard, J. M.

B. Gayral and J. M. Gérard, “Strong Purcell effect for InAs quantum boxes in high-Q wet-etched microdisks,” Physica E 7(3-4), 641–645 (2000).
[CrossRef]

Ho, S. T.

W. Fang, J. Y. Xu, A. Yamilov, H. Cao, Y. Ma, S. T. Ho, and G. S. Solomon, “Large enhancement of spontaneous emission rates of InAs quantum dots in GaAs microdisks,” Opt. Lett. 27(11), 948–950 (2002).
[CrossRef] [PubMed]

K. J. Luo, J. Y. Xu, H. Cao, Y. Ma, S. H. Chang, S. T. Ho, and G. S. Solomon, “Ultrafast dynamics of InAs/GaAs quantum-dot microdisk lasers,” Appl. Phys. Lett. 78(22), 3397–3399 (2001).
[CrossRef]

K. J. Luo, J. Y. Xu, H. Cao, Y. Ma, S. H. Chang, S. T. Ho, and G. S. Solomon, “Dynamics of GaAs/AlGaAs microdisk lasers,” Appl. Phys. Lett. 77(15), 2304–2306 (2000).
[CrossRef]

Hong, J. Z.

Houdre, R.

A. Fiore, P. Borri, W. Langbein, J. M. Hvam, U. Oesterle, R. Houdre, R. P. Stanley, and M. Ilegems, “Time-resolved optical characterization of InAs/InGaAs quantum dots emitting at 1.3 μm,” Appl. Phys. Lett. 76(23), 3430–3432 (2000).
[CrossRef]

Huang, H.

D. G. Deppe and H. Huang, “Quantum-dot vertical-cavity surface-emitting laser based on the Purcell effect,” Appl. Phys. Lett. 75(22), 3455–3457 (1999).
[CrossRef]

Hvam, J. M.

A. Fiore, P. Borri, W. Langbein, J. M. Hvam, U. Oesterle, R. Houdre, R. P. Stanley, and M. Ilegems, “Time-resolved optical characterization of InAs/InGaAs quantum dots emitting at 1.3 μm,” Appl. Phys. Lett. 76(23), 3430–3432 (2000).
[CrossRef]

Ide, T.

T. Ide, T. Baba, J. Tatebayashi, S. Iwamoto, T. Nakaoka, and Y. Arakawa, “Lasing characteristics of InAs quantum-dot microdisk from 3 K to roomtemperature,” Appl. Phys. Lett. 85(8), 1326–1328 (2004).
[CrossRef]

Ilegems, M.

A. Fiore, P. Borri, W. Langbein, J. M. Hvam, U. Oesterle, R. Houdre, R. P. Stanley, and M. Ilegems, “Time-resolved optical characterization of InAs/InGaAs quantum dots emitting at 1.3 μm,” Appl. Phys. Lett. 76(23), 3430–3432 (2000).
[CrossRef]

Iwamoto, S.

T. Ide, T. Baba, J. Tatebayashi, S. Iwamoto, T. Nakaoka, and Y. Arakawa, “Lasing characteristics of InAs quantum-dot microdisk from 3 K to roomtemperature,” Appl. Phys. Lett. 85(8), 1326–1328 (2004).
[CrossRef]

Kihara, M.

T. Baba, M. Fujita, A. Sakai, M. Kihara, and R. Watanabe, “Lasing characteristics of GaInAsP-InP strained quantum-well microdisk injection lasers with diameter of 2–10 μm,” IEEE Photon. Technol. Lett. 9(7), 878–880 (1997).
[CrossRef]

Kokubun, Y.

R. Ushigome, M. Fujita, A. Sakai, T. Baba, and Y. Kokubun, “GaInAsP microdisk injection laser with benzocyclobutene polymer cladding and its athermal effect,” Jpn. J. Appl. Phys. 41(Part 1, No. 11A), 6364–6369 (2002).
[CrossRef]

Lagahe, C.

Langbein, W.

A. Fiore, P. Borri, W. Langbein, J. M. Hvam, U. Oesterle, R. Houdre, R. P. Stanley, and M. Ilegems, “Time-resolved optical characterization of InAs/InGaAs quantum dots emitting at 1.3 μm,” Appl. Phys. Lett. 76(23), 3430–3432 (2000).
[CrossRef]

Levi, A. F. J.

S. M. K. Thiyagarajan and A. F. J. Levi, “High-speed response of optically-pumped InGaAs/InGaAsP microdisk lasers,” Electron. Lett. 37(3), 175–176 (2001).
[CrossRef]

S. M. K. Thiyagarajan and A. F. J. Levi, “Dynamic behavior of scaled microdisk laser,” Solid-State Electron. 45(10), 1821–1826 (2001).
[CrossRef]

Lippi, L.

M. Colocci, A. Vinattieri, L. Lippi, F. Bogani, M. Rosa-Clot, S. Taddei, A. Bosacchi, S. Franchi, and P. Frigeri, “Controlled tuning of the radiative lifetime in InAs self-assembled quantum dots through vertical ordering,” Appl. Phys. Lett. 74(4), 564–566 (1999).
[CrossRef]

Liu, L.

L. Liu, J. V. Campenhout, G. Roelkens, D. V. Thourhout, P. Rojo-Romeo, P. Regreny, C. Seassal, J. Fédéli, and R. Baets, “Ultralow-power all-optical wavelength conversion in a silicon-on-insulator waveguide based on a heterogeneously integrated III-V microdisk laser,” Appl. Phys. Lett. 93(6), 061107 (2008).
[CrossRef]

L. Liu, J. Van Campenhout, G. Roelkens, R. A. Soref, D. Van Thourhout, P. Rojo-Romeo, P. Regreny, C. Seassal, J. M. Fédéli, and R. Baets, “Carrier-injection-based electro-optic modulator on silicon-on-insulator with a heterogeneously integrated III-V microdisk cavity,” Opt. Lett. 33(21), 2518–2520 (2008).
[CrossRef] [PubMed]

Luo, K. J.

K. J. Luo, J. Y. Xu, H. Cao, Y. Ma, S. H. Chang, S. T. Ho, and G. S. Solomon, “Ultrafast dynamics of InAs/GaAs quantum-dot microdisk lasers,” Appl. Phys. Lett. 78(22), 3397–3399 (2001).
[CrossRef]

K. J. Luo, J. Y. Xu, H. Cao, Y. Ma, S. H. Chang, S. T. Ho, and G. S. Solomon, “Dynamics of GaAs/AlGaAs microdisk lasers,” Appl. Phys. Lett. 77(15), 2304–2306 (2000).
[CrossRef]

Ma, Y.

W. Fang, J. Y. Xu, A. Yamilov, H. Cao, Y. Ma, S. T. Ho, and G. S. Solomon, “Large enhancement of spontaneous emission rates of InAs quantum dots in GaAs microdisks,” Opt. Lett. 27(11), 948–950 (2002).
[CrossRef] [PubMed]

K. J. Luo, J. Y. Xu, H. Cao, Y. Ma, S. H. Chang, S. T. Ho, and G. S. Solomon, “Ultrafast dynamics of InAs/GaAs quantum-dot microdisk lasers,” Appl. Phys. Lett. 78(22), 3397–3399 (2001).
[CrossRef]

K. J. Luo, J. Y. Xu, H. Cao, Y. Ma, S. H. Chang, S. T. Ho, and G. S. Solomon, “Dynamics of GaAs/AlGaAs microdisk lasers,” Appl. Phys. Lett. 77(15), 2304–2306 (2000).
[CrossRef]

Mao, M.-H.

Nakaoka, T.

T. Ide, T. Baba, J. Tatebayashi, S. Iwamoto, T. Nakaoka, and Y. Arakawa, “Lasing characteristics of InAs quantum-dot microdisk from 3 K to roomtemperature,” Appl. Phys. Lett. 85(8), 1326–1328 (2004).
[CrossRef]

Oesterle, U.

A. Fiore, P. Borri, W. Langbein, J. M. Hvam, U. Oesterle, R. Houdre, R. P. Stanley, and M. Ilegems, “Time-resolved optical characterization of InAs/InGaAs quantum dots emitting at 1.3 μm,” Appl. Phys. Lett. 76(23), 3430–3432 (2000).
[CrossRef]

Regreny, P.

Roelkens, G.

L. Liu, J. Van Campenhout, G. Roelkens, R. A. Soref, D. Van Thourhout, P. Rojo-Romeo, P. Regreny, C. Seassal, J. M. Fédéli, and R. Baets, “Carrier-injection-based electro-optic modulator on silicon-on-insulator with a heterogeneously integrated III-V microdisk cavity,” Opt. Lett. 33(21), 2518–2520 (2008).
[CrossRef] [PubMed]

L. Liu, J. V. Campenhout, G. Roelkens, D. V. Thourhout, P. Rojo-Romeo, P. Regreny, C. Seassal, J. Fédéli, and R. Baets, “Ultralow-power all-optical wavelength conversion in a silicon-on-insulator waveguide based on a heterogeneously integrated III-V microdisk laser,” Appl. Phys. Lett. 93(6), 061107 (2008).
[CrossRef]

Rojo Romeo, P.

Rojo-Romeo, P.

L. Liu, J. V. Campenhout, G. Roelkens, D. V. Thourhout, P. Rojo-Romeo, P. Regreny, C. Seassal, J. Fédéli, and R. Baets, “Ultralow-power all-optical wavelength conversion in a silicon-on-insulator waveguide based on a heterogeneously integrated III-V microdisk laser,” Appl. Phys. Lett. 93(6), 061107 (2008).
[CrossRef]

L. Liu, J. Van Campenhout, G. Roelkens, R. A. Soref, D. Van Thourhout, P. Rojo-Romeo, P. Regreny, C. Seassal, J. M. Fédéli, and R. Baets, “Carrier-injection-based electro-optic modulator on silicon-on-insulator with a heterogeneously integrated III-V microdisk cavity,” Opt. Lett. 33(21), 2518–2520 (2008).
[CrossRef] [PubMed]

Rosa-Clot, M.

M. Colocci, A. Vinattieri, L. Lippi, F. Bogani, M. Rosa-Clot, S. Taddei, A. Bosacchi, S. Franchi, and P. Frigeri, “Controlled tuning of the radiative lifetime in InAs self-assembled quantum dots through vertical ordering,” Appl. Phys. Lett. 74(4), 564–566 (1999).
[CrossRef]

Sakai, A.

R. Ushigome, M. Fujita, A. Sakai, T. Baba, and Y. Kokubun, “GaInAsP microdisk injection laser with benzocyclobutene polymer cladding and its athermal effect,” Jpn. J. Appl. Phys. 41(Part 1, No. 11A), 6364–6369 (2002).
[CrossRef]

M. Fujita, A. Sakai, and T. Baba, “Ultrasmall and ultralow threshold GaInAsP-InP microdisk injection lasers: design, fabrication, lasing characteristics, and spontaneous emission factor,” IEEE J. Sel. Top. Quantum Electron. 5(3), 673–681 (1999).
[CrossRef]

T. Baba, M. Fujita, A. Sakai, M. Kihara, and R. Watanabe, “Lasing characteristics of GaInAsP-InP strained quantum-well microdisk injection lasers with diameter of 2–10 μm,” IEEE Photon. Technol. Lett. 9(7), 878–880 (1997).
[CrossRef]

Sano, D.

T. Baba and D. Sano, “Low-threshold lasing and Purcell effect in microdisk lasers at room temperature,” IEEE J. Sel. Top. Quantum Electron. 9(5), 1340–1346 (2003).
[CrossRef]

Seassal, C.

Solomon, G. S.

W. Fang, J. Y. Xu, A. Yamilov, H. Cao, Y. Ma, S. T. Ho, and G. S. Solomon, “Large enhancement of spontaneous emission rates of InAs quantum dots in GaAs microdisks,” Opt. Lett. 27(11), 948–950 (2002).
[CrossRef] [PubMed]

K. J. Luo, J. Y. Xu, H. Cao, Y. Ma, S. H. Chang, S. T. Ho, and G. S. Solomon, “Ultrafast dynamics of InAs/GaAs quantum-dot microdisk lasers,” Appl. Phys. Lett. 78(22), 3397–3399 (2001).
[CrossRef]

K. J. Luo, J. Y. Xu, H. Cao, Y. Ma, S. H. Chang, S. T. Ho, and G. S. Solomon, “Dynamics of GaAs/AlGaAs microdisk lasers,” Appl. Phys. Lett. 77(15), 2304–2306 (2000).
[CrossRef]

Soref, R. A.

Stanley, R. P.

A. Fiore, P. Borri, W. Langbein, J. M. Hvam, U. Oesterle, R. Houdre, R. P. Stanley, and M. Ilegems, “Time-resolved optical characterization of InAs/InGaAs quantum dots emitting at 1.3 μm,” Appl. Phys. Lett. 76(23), 3430–3432 (2000).
[CrossRef]

Taddei, S.

M. Colocci, A. Vinattieri, L. Lippi, F. Bogani, M. Rosa-Clot, S. Taddei, A. Bosacchi, S. Franchi, and P. Frigeri, “Controlled tuning of the radiative lifetime in InAs self-assembled quantum dots through vertical ordering,” Appl. Phys. Lett. 74(4), 564–566 (1999).
[CrossRef]

Tatebayashi, J.

T. Ide, T. Baba, J. Tatebayashi, S. Iwamoto, T. Nakaoka, and Y. Arakawa, “Lasing characteristics of InAs quantum-dot microdisk from 3 K to roomtemperature,” Appl. Phys. Lett. 85(8), 1326–1328 (2004).
[CrossRef]

Thiyagarajan, S. M. K.

S. M. K. Thiyagarajan and A. F. J. Levi, “High-speed response of optically-pumped InGaAs/InGaAsP microdisk lasers,” Electron. Lett. 37(3), 175–176 (2001).
[CrossRef]

S. M. K. Thiyagarajan and A. F. J. Levi, “Dynamic behavior of scaled microdisk laser,” Solid-State Electron. 45(10), 1821–1826 (2001).
[CrossRef]

Thourhout, D. V.

L. Liu, J. V. Campenhout, G. Roelkens, D. V. Thourhout, P. Rojo-Romeo, P. Regreny, C. Seassal, J. Fédéli, and R. Baets, “Ultralow-power all-optical wavelength conversion in a silicon-on-insulator waveguide based on a heterogeneously integrated III-V microdisk laser,” Appl. Phys. Lett. 93(6), 061107 (2008).
[CrossRef]

Ushigome, R.

R. Ushigome, M. Fujita, A. Sakai, T. Baba, and Y. Kokubun, “GaInAsP microdisk injection laser with benzocyclobutene polymer cladding and its athermal effect,” Jpn. J. Appl. Phys. 41(Part 1, No. 11A), 6364–6369 (2002).
[CrossRef]

Van Campenhout, J.

Van Thourhout, D.

Verstuyft, S.

Vinattieri, A.

M. Colocci, A. Vinattieri, L. Lippi, F. Bogani, M. Rosa-Clot, S. Taddei, A. Bosacchi, S. Franchi, and P. Frigeri, “Controlled tuning of the radiative lifetime in InAs self-assembled quantum dots through vertical ordering,” Appl. Phys. Lett. 74(4), 564–566 (1999).
[CrossRef]

Watanabe, R.

T. Baba, M. Fujita, A. Sakai, M. Kihara, and R. Watanabe, “Lasing characteristics of GaInAsP-InP strained quantum-well microdisk injection lasers with diameter of 2–10 μm,” IEEE Photon. Technol. Lett. 9(7), 878–880 (1997).
[CrossRef]

Xu, J. Y.

W. Fang, J. Y. Xu, A. Yamilov, H. Cao, Y. Ma, S. T. Ho, and G. S. Solomon, “Large enhancement of spontaneous emission rates of InAs quantum dots in GaAs microdisks,” Opt. Lett. 27(11), 948–950 (2002).
[CrossRef] [PubMed]

K. J. Luo, J. Y. Xu, H. Cao, Y. Ma, S. H. Chang, S. T. Ho, and G. S. Solomon, “Ultrafast dynamics of InAs/GaAs quantum-dot microdisk lasers,” Appl. Phys. Lett. 78(22), 3397–3399 (2001).
[CrossRef]

K. J. Luo, J. Y. Xu, H. Cao, Y. Ma, S. H. Chang, S. T. Ho, and G. S. Solomon, “Dynamics of GaAs/AlGaAs microdisk lasers,” Appl. Phys. Lett. 77(15), 2304–2306 (2000).
[CrossRef]

Yamilov, A.

Appl. Phys. Lett. (7)

K. J. Luo, J. Y. Xu, H. Cao, Y. Ma, S. H. Chang, S. T. Ho, and G. S. Solomon, “Dynamics of GaAs/AlGaAs microdisk lasers,” Appl. Phys. Lett. 77(15), 2304–2306 (2000).
[CrossRef]

K. J. Luo, J. Y. Xu, H. Cao, Y. Ma, S. H. Chang, S. T. Ho, and G. S. Solomon, “Ultrafast dynamics of InAs/GaAs quantum-dot microdisk lasers,” Appl. Phys. Lett. 78(22), 3397–3399 (2001).
[CrossRef]

M. Colocci, A. Vinattieri, L. Lippi, F. Bogani, M. Rosa-Clot, S. Taddei, A. Bosacchi, S. Franchi, and P. Frigeri, “Controlled tuning of the radiative lifetime in InAs self-assembled quantum dots through vertical ordering,” Appl. Phys. Lett. 74(4), 564–566 (1999).
[CrossRef]

T. Ide, T. Baba, J. Tatebayashi, S. Iwamoto, T. Nakaoka, and Y. Arakawa, “Lasing characteristics of InAs quantum-dot microdisk from 3 K to roomtemperature,” Appl. Phys. Lett. 85(8), 1326–1328 (2004).
[CrossRef]

D. G. Deppe and H. Huang, “Quantum-dot vertical-cavity surface-emitting laser based on the Purcell effect,” Appl. Phys. Lett. 75(22), 3455–3457 (1999).
[CrossRef]

A. Fiore, P. Borri, W. Langbein, J. M. Hvam, U. Oesterle, R. Houdre, R. P. Stanley, and M. Ilegems, “Time-resolved optical characterization of InAs/InGaAs quantum dots emitting at 1.3 μm,” Appl. Phys. Lett. 76(23), 3430–3432 (2000).
[CrossRef]

L. Liu, J. V. Campenhout, G. Roelkens, D. V. Thourhout, P. Rojo-Romeo, P. Regreny, C. Seassal, J. Fédéli, and R. Baets, “Ultralow-power all-optical wavelength conversion in a silicon-on-insulator waveguide based on a heterogeneously integrated III-V microdisk laser,” Appl. Phys. Lett. 93(6), 061107 (2008).
[CrossRef]

Electron. Lett. (1)

S. M. K. Thiyagarajan and A. F. J. Levi, “High-speed response of optically-pumped InGaAs/InGaAsP microdisk lasers,” Electron. Lett. 37(3), 175–176 (2001).
[CrossRef]

IEEE J. Sel. Top. Quantum Electron. (2)

T. Baba and D. Sano, “Low-threshold lasing and Purcell effect in microdisk lasers at room temperature,” IEEE J. Sel. Top. Quantum Electron. 9(5), 1340–1346 (2003).
[CrossRef]

M. Fujita, A. Sakai, and T. Baba, “Ultrasmall and ultralow threshold GaInAsP-InP microdisk injection lasers: design, fabrication, lasing characteristics, and spontaneous emission factor,” IEEE J. Sel. Top. Quantum Electron. 5(3), 673–681 (1999).
[CrossRef]

IEEE Photon. Technol. Lett. (1)

T. Baba, M. Fujita, A. Sakai, M. Kihara, and R. Watanabe, “Lasing characteristics of GaInAsP-InP strained quantum-well microdisk injection lasers with diameter of 2–10 μm,” IEEE Photon. Technol. Lett. 9(7), 878–880 (1997).
[CrossRef]

Jpn. J. Appl. Phys. (1)

R. Ushigome, M. Fujita, A. Sakai, T. Baba, and Y. Kokubun, “GaInAsP microdisk injection laser with benzocyclobutene polymer cladding and its athermal effect,” Jpn. J. Appl. Phys. 41(Part 1, No. 11A), 6364–6369 (2002).
[CrossRef]

Opt. Express (2)

Opt. Lett. (2)

Physica E (1)

B. Gayral and J. M. Gérard, “Strong Purcell effect for InAs quantum boxes in high-Q wet-etched microdisks,” Physica E 7(3-4), 641–645 (2000).
[CrossRef]

Solid-State Electron. (1)

S. M. K. Thiyagarajan and A. F. J. Levi, “Dynamic behavior of scaled microdisk laser,” Solid-State Electron. 45(10), 1821–1826 (2001).
[CrossRef]

Other (2)

D. Bimberg, M. Grundmann, and N. N. Ledentsov, Quantum Dot Heterostructures (John Wiley & Sons, 1999).

L. A. Coldren and S. W. Corzine, Diode Lasers and Photonic Integrated Circuits (John Wiley & Sons, 1995), chap. 2.

Cited By

OSA participates in CrossRef's Cited-By Linking service. Citing articles from OSA journals and other participating publishers are listed here.

Alert me when this article is cited.


Figures (7)

Fig. 1
Fig. 1

Schematic drawing of a 6.5-μm-diameter current-injection QD microdisk laser with BCB planarization layer.

Fig. 2
Fig. 2

The L-I curve of the 6.5-μm-diameter microdisk laser with a threshold current of 0.47 mA. Inset: the spectrum showing single lasing WGM near 1059 nm.

Fig. 3
Fig. 3

The temporal optical responses measured from (a) a QD microdisk laser and (b) a conventional QD edge-emitting laser fabricated from the same wafer. The origins of time axis are defined by the rising edge of the electric pulses. The normalized injection currents are indicated in the graphs.

Fig. 4
Fig. 4

The time-resolved PL for an unprocessed QD sample and for microdisks with different sizes.

Fig. 5
Fig. 5

The temporal optical responses calculated from the rate-equation model for (a) a QD microdisk laser and (b) a conventional QD edge-emitting laser. The injection starts at t = 0 ns. The normalized injection currents are indicated in the graphs.

Fig. 6
Fig. 6

The ideal data stream at 1 Gbps, the real electric pulse shape, and the optical responses of the QD microdisk laser with bias current of 0.19 mA. The peak current is 0.97 mA.

Fig. 7
Fig. 7

(a) The observed WGM wavelengths of a 6.5-μm-diamenter microdisk laser at different temperatures. (b)-(d): The temporal optical responses measured at (b) 100 K, (c) 150 K, and (d) 200 K. For 250 K and 300 K, there is only one WGM lasing with the temporal response similar to those in Fig. 3(a).

Equations (2)

Equations on this page are rendered with MathJax. Learn more.

dN dt = J qd u N τ sp ( 1u ) N τ sp v g G( N )S N τ nr
dS dt =β N τ sp +Γ v g G( N )S S τ p .

Metrics