Abstract

Ultrafast VECSELs are compact pulsed laser sources with more flexibility in the emission wavelength compared to diode-pumped solid-state lasers. Typically, the reduction of the pulse repetition rate is a straightforward method to increase both pulse energy and peak power. However, the relatively short carrier lifetime of semiconductor gain materials of a few nanoseconds sets a lower limit to the repetition rate of passively modelocked VECSELs. This fast gain recovery combined with low pulse repetition rates leads to the buildup of multiple pulses in the cavity. Therefore, we applied an active multipass approach with which demonstrate fundamental modelocking at a repetition rate of 253 MHz with 400 mW average output power in 11.3 ps pulses.

© 2012 OSA

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    [CrossRef] [PubMed]
  29. R. Häring, R. Paschotta, A. Aschwanden, E. Gini, F. Morier-Genoud, and U. Keller, “High–power passively mode–locked semiconductor lasers,” IEEE J. Quantum Electron.38(9), 1268–1275 (2002).
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2012 (2)

M. Scheller, T. L. Wang, B. Kunert, W. Stolz, S. W. Koch, and J. V. Moloney, “Passively modelocked VECSEL emitting 682 fs pulses with 5.1 W of average output power,” Electron. Lett.48(10), 588–589 (2012).
[CrossRef]

K. G. Wilcox, A. H. Quarterman, V. Apostolopoulos, H. E. Beere, I. Farrer, D. A. Ritchie, and A. C. Tropper, “175 GHz, 400-fs-pulse harmonically mode-locked surface emitting semiconductor laser,” Opt. Express20(7), 7040–7045 (2012).
[CrossRef] [PubMed]

2011 (7)

R. Aviles-Espinosa, G. Filippidis, C. Hamilton, G. Malcolm, K. J. Weingarten, T. Südmeyer, Y. Barbarin, U. Keller, S. I. C. O. Santos, D. Artigas, and P. Loza-Alvarez, “Compact ultrafast semiconductor disk laser: targeting GFP based nonlinear applications in living organisms,” Biomed. Opt. Express2(4), 739–747 (2011).
[CrossRef] [PubMed]

M. Hoffmann, O. D. Sieber, V. J. Wittwer, I. L. Krestnikov, D. A. Livshits, Y. Barbarin, T. Südmeyer, and U. Keller, “Femtosecond high-power quantum dot vertical external cavity surface emitting laser,” Opt. Express19(9), 8108–8116 (2011).
[CrossRef] [PubMed]

O. D. Sieber, V. J. Wittwer, M. Mangold, M. Hoffmann, M. Golling, T. Südmeyer, and U. Keller, “Femtosecond VECSEL with tunable multi-gigahertz repetition rate,” Opt. Express19(23), 23538–23543 (2011).
[CrossRef] [PubMed]

Y. F. Chen, Y. C. Lee, H. C. Liang, K. Y. Lin, K. W. Su, and K. F. Huang, “Femtosecond high-power spontaneous mode-locked operation in vertical-external cavity surface-emitting laser with gigahertz oscillation,” Opt. Lett.36(23), 4581–4583 (2011).
[CrossRef] [PubMed]

K. G. Wilcox, A. H. Quarterman, H. E. Beere, D. A. Ritchie, and A. C. Tropper, “Variable repetition frequency femtosecond-pulse surface emitting semiconductor laser,” Appl. Phys. Lett.99(13), 131107 (2011).
[CrossRef]

V. J. Wittwer, C. A. Zaugg, W. P. Pallmann, A. E. H. Oehler, B. Rudin, M. Hoffmann, M. Golling, Y. Barbarin, T. Sudmeyer, and U. Keller, “Timing jitter characterization of a free-running SESAM mode-locked VECSEL,” IEEE Photon. J.3(4), 658–664 (2011).
[CrossRef]

P. Klopp, U. Griebner, M. Zorn, and M. Weyers, “Pulse repetition rate up to 92 GHz or pulse duration shorter than 110 fs from a mode-locked semiconductor disk laser,” Appl. Phys. Lett.98(7), 071103 (2011).
[CrossRef]

2010 (4)

K. G. Wilcox, A. H. Quarterman, H. Beere, D. A. Ritchie, and A. C. Tropper, “High peak power femtosecond pulse passively mode-locked vertical-external-cavity surface-emitting laser,” IEEE Photon. Technol. Lett.22(14), 1021–1023 (2010).
[CrossRef]

U. Keller, “Ultrafast solid-state laser oscillators: a success story for the last 20 years with no end in sight,” Appl. Phys. B100(1), 15–28 (2010).
[CrossRef]

T. Hochrein, R. Wilk, M. Mei, R. Holzwarth, N. Krumbholz, and M. Koch, “Optical sampling by laser cavity tuning,” Opt. Express18(2), 1613–1617 (2010).
[CrossRef] [PubMed]

B. Rudin, V. J. Wittwer, D. J. H. C. Maas, M. Hoffmann, O. D. Sieber, Y. Barbarin, M. Golling, T. Südmeyer, and U. Keller, “High-power MIXSEL: an integrated ultrafast semiconductor laser with 6.4 W average power,” Opt. Express18(26), 27582–27588 (2010).
[CrossRef] [PubMed]

2009 (1)

A. H. Quarterman, K. G. Wilcox, V. Apostolopoulos, Z. Mihoubi, S. P. Elsmere, I. Farrer, D. A. Ritchie, and A. Tropper, “A passively mode-locked external-cavity semiconductor laser emitting 60-fs pulses,” Nat. Photonics3(12), 729–731 (2009).
[CrossRef]

2008 (5)

2007 (2)

D. J. H. C. Maas, A.-R. Bellancourt, B. Rudin, M. Golling, H. J. Unold, T. Südmeyer, and U. Keller, “Vertical integration of ultrafast semiconductor lasers,” Appl. Phys. B88(4), 493–497 (2007).
[CrossRef]

E. J. Saarinen, A. Härkönen, R. Herda, S. Suomalainen, L. Orsila, T. Hakulinen, M. Guina, and O. G. Okhotnikov, “Harmonically mode-locked VECSELs for multi-GHz pulse train generation,” Opt. Express15(3), 955–964 (2007).
[CrossRef] [PubMed]

2006 (1)

D. Lorenser, D. J. H. C. Maas, H. J. Unold, A.-R. Bellancourt, B. Rudin, E. Gini, D. Ebling, and U. Keller, “50-GHz passively mode-locked surface-emitting semiconductor laser with 100 mW average output power,” IEEE J. Quantum Electron.42(8), 838–847 (2006).
[CrossRef]

2005 (1)

2002 (1)

R. Häring, R. Paschotta, A. Aschwanden, E. Gini, F. Morier-Genoud, and U. Keller, “High–power passively mode–locked semiconductor lasers,” IEEE J. Quantum Electron.38(9), 1268–1275 (2002).
[CrossRef]

2000 (1)

S. Hoogland, S. Dhanjal, A. C. Tropper, S. J. Roberts, R. Häring, R. Paschotta, F. Morier-Genoud, and U. Keller, “Passively mode-locked diode-pumped surface-emitting semiconductor laser,” IEEE Photon. Technol. Lett.12(9), 1135–1137 (2000).
[CrossRef]

1999 (1)

1997 (1)

M. Kuznetsov, F. Hakimi, R. Sprague, and A. Mooradian, “High-power (>0.5-W cw) diode-pumped vertical-external-cavity surface-emitting semiconductor lasers with circular TEM00 beams,” IEEE Photon. Technol. Lett.9(8), 1063–1065 (1997).
[CrossRef]

1996 (1)

U. Keller, K. J. Weingarten, F. X. Kärtner, D. Kopf, B. Braun, I. D. Jung, R. Fluck, C. Hönninger, N. Matuschek, and J. Aus der Au, “Semiconductor saturable absorber mirrors (SESAMs) for femtosecond to nanosecond pulse generation in solid-state lasers,” IEEE J. Sel. Top. Quantum Electron.2(3), 435–453 (1996).
[CrossRef]

1965 (1)

Apostolopoulos, V.

K. G. Wilcox, A. H. Quarterman, V. Apostolopoulos, H. E. Beere, I. Farrer, D. A. Ritchie, and A. C. Tropper, “175 GHz, 400-fs-pulse harmonically mode-locked surface emitting semiconductor laser,” Opt. Express20(7), 7040–7045 (2012).
[CrossRef] [PubMed]

A. H. Quarterman, K. G. Wilcox, V. Apostolopoulos, Z. Mihoubi, S. P. Elsmere, I. Farrer, D. A. Ritchie, and A. Tropper, “A passively mode-locked external-cavity semiconductor laser emitting 60-fs pulses,” Nat. Photonics3(12), 729–731 (2009).
[CrossRef]

Artigas, D.

Aschwanden, A.

A. Aschwanden, D. Lorenser, H. J. Unold, R. Paschotta, E. Gini, and U. Keller, “2.1-W picosecond passively mode-locked external-cavity semiconductor laser,” Opt. Lett.30(3), 272–274 (2005).
[CrossRef] [PubMed]

R. Häring, R. Paschotta, A. Aschwanden, E. Gini, F. Morier-Genoud, and U. Keller, “High–power passively mode–locked semiconductor lasers,” IEEE J. Quantum Electron.38(9), 1268–1275 (2002).
[CrossRef]

Aus der Au, J.

U. Keller, K. J. Weingarten, F. X. Kärtner, D. Kopf, B. Braun, I. D. Jung, R. Fluck, C. Hönninger, N. Matuschek, and J. Aus der Au, “Semiconductor saturable absorber mirrors (SESAMs) for femtosecond to nanosecond pulse generation in solid-state lasers,” IEEE J. Sel. Top. Quantum Electron.2(3), 435–453 (1996).
[CrossRef]

Aviles-Espinosa, R.

Baer, C. R. E.

Barbarin, Y.

Bauer, D.

Beere, H.

K. G. Wilcox, A. H. Quarterman, H. Beere, D. A. Ritchie, and A. C. Tropper, “High peak power femtosecond pulse passively mode-locked vertical-external-cavity surface-emitting laser,” IEEE Photon. Technol. Lett.22(14), 1021–1023 (2010).
[CrossRef]

Beere, H. E.

K. G. Wilcox, A. H. Quarterman, V. Apostolopoulos, H. E. Beere, I. Farrer, D. A. Ritchie, and A. C. Tropper, “175 GHz, 400-fs-pulse harmonically mode-locked surface emitting semiconductor laser,” Opt. Express20(7), 7040–7045 (2012).
[CrossRef] [PubMed]

K. G. Wilcox, A. H. Quarterman, H. E. Beere, D. A. Ritchie, and A. C. Tropper, “Variable repetition frequency femtosecond-pulse surface emitting semiconductor laser,” Appl. Phys. Lett.99(13), 131107 (2011).
[CrossRef]

Bellancourt, A.-R.

D. J. H. C. Maas, A.-R. Bellancourt, B. Rudin, M. Golling, H. J. Unold, T. Südmeyer, and U. Keller, “Vertical integration of ultrafast semiconductor lasers,” Appl. Phys. B88(4), 493–497 (2007).
[CrossRef]

D. Lorenser, D. J. H. C. Maas, H. J. Unold, A.-R. Bellancourt, B. Rudin, E. Gini, D. Ebling, and U. Keller, “50-GHz passively mode-locked surface-emitting semiconductor laser with 100 mW average output power,” IEEE J. Quantum Electron.42(8), 838–847 (2006).
[CrossRef]

Braun, B.

U. Keller, K. J. Weingarten, F. X. Kärtner, D. Kopf, B. Braun, I. D. Jung, R. Fluck, C. Hönninger, N. Matuschek, and J. Aus der Au, “Semiconductor saturable absorber mirrors (SESAMs) for femtosecond to nanosecond pulse generation in solid-state lasers,” IEEE J. Sel. Top. Quantum Electron.2(3), 435–453 (1996).
[CrossRef]

Chen, Y. F.

Dekorsy, T.

Dhanjal, S.

S. Hoogland, S. Dhanjal, A. C. Tropper, S. J. Roberts, R. Häring, R. Paschotta, F. Morier-Genoud, and U. Keller, “Passively mode-locked diode-pumped surface-emitting semiconductor laser,” IEEE Photon. Technol. Lett.12(9), 1135–1137 (2000).
[CrossRef]

Ebling, D.

D. Lorenser, D. J. H. C. Maas, H. J. Unold, A.-R. Bellancourt, B. Rudin, E. Gini, D. Ebling, and U. Keller, “50-GHz passively mode-locked surface-emitting semiconductor laser with 100 mW average output power,” IEEE J. Quantum Electron.42(8), 838–847 (2006).
[CrossRef]

Elsmere, S. P.

A. H. Quarterman, K. G. Wilcox, V. Apostolopoulos, Z. Mihoubi, S. P. Elsmere, I. Farrer, D. A. Ritchie, and A. Tropper, “A passively mode-locked external-cavity semiconductor laser emitting 60-fs pulses,” Nat. Photonics3(12), 729–731 (2009).
[CrossRef]

A. H. Quarterman, K. G. Wilcox, S. P. Elsmere, Z. Mihoubi, and A. C. Tropper, “Active stabilisation and timing jitter characterisation of sub-500 fs pulse passively modelocked VECSEL,” Electron. Lett.44(19), 1135–1137 (2008).
[CrossRef]

Engqvist, A. G.

Farrer, I.

K. G. Wilcox, A. H. Quarterman, V. Apostolopoulos, H. E. Beere, I. Farrer, D. A. Ritchie, and A. C. Tropper, “175 GHz, 400-fs-pulse harmonically mode-locked surface emitting semiconductor laser,” Opt. Express20(7), 7040–7045 (2012).
[CrossRef] [PubMed]

A. H. Quarterman, K. G. Wilcox, V. Apostolopoulos, Z. Mihoubi, S. P. Elsmere, I. Farrer, D. A. Ritchie, and A. Tropper, “A passively mode-locked external-cavity semiconductor laser emitting 60-fs pulses,” Nat. Photonics3(12), 729–731 (2009).
[CrossRef]

Filippidis, G.

Fluck, R.

U. Keller, K. J. Weingarten, F. X. Kärtner, D. Kopf, B. Braun, I. D. Jung, R. Fluck, C. Hönninger, N. Matuschek, and J. Aus der Au, “Semiconductor saturable absorber mirrors (SESAMs) for femtosecond to nanosecond pulse generation in solid-state lasers,” IEEE J. Sel. Top. Quantum Electron.2(3), 435–453 (1996).
[CrossRef]

Gini, E.

D. Lorenser, D. J. H. C. Maas, H. J. Unold, A.-R. Bellancourt, B. Rudin, E. Gini, D. Ebling, and U. Keller, “50-GHz passively mode-locked surface-emitting semiconductor laser with 100 mW average output power,” IEEE J. Quantum Electron.42(8), 838–847 (2006).
[CrossRef]

A. Aschwanden, D. Lorenser, H. J. Unold, R. Paschotta, E. Gini, and U. Keller, “2.1-W picosecond passively mode-locked external-cavity semiconductor laser,” Opt. Lett.30(3), 272–274 (2005).
[CrossRef] [PubMed]

R. Häring, R. Paschotta, A. Aschwanden, E. Gini, F. Morier-Genoud, and U. Keller, “High–power passively mode–locked semiconductor lasers,” IEEE J. Quantum Electron.38(9), 1268–1275 (2002).
[CrossRef]

Golling, M.

Griebner, U.

P. Klopp, U. Griebner, M. Zorn, and M. Weyers, “Pulse repetition rate up to 92 GHz or pulse duration shorter than 110 fs from a mode-locked semiconductor disk laser,” Appl. Phys. Lett.98(7), 071103 (2011).
[CrossRef]

P. Klopp, F. Saas, M. Zorn, M. Weyers, and U. Griebner, “290-fs pulses from a semiconductor disk laser,” Opt. Express16(8), 5770–5775 (2008).
[CrossRef] [PubMed]

Guina, M.

Hakimi, F.

M. Kuznetsov, F. Hakimi, R. Sprague, and A. Mooradian, “High-power (>0.5-W cw) diode-pumped vertical-external-cavity surface-emitting semiconductor lasers with circular TEM00 beams,” IEEE Photon. Technol. Lett.9(8), 1063–1065 (1997).
[CrossRef]

Hakulinen, T.

Hamilton, C.

Häring, R.

R. Häring, R. Paschotta, A. Aschwanden, E. Gini, F. Morier-Genoud, and U. Keller, “High–power passively mode–locked semiconductor lasers,” IEEE J. Quantum Electron.38(9), 1268–1275 (2002).
[CrossRef]

S. Hoogland, S. Dhanjal, A. C. Tropper, S. J. Roberts, R. Häring, R. Paschotta, F. Morier-Genoud, and U. Keller, “Passively mode-locked diode-pumped surface-emitting semiconductor laser,” IEEE Photon. Technol. Lett.12(9), 1135–1137 (2000).
[CrossRef]

Härkönen, A.

Hashimoto, S.

Herda, R.

Herriott, D. R.

Hochrein, T.

Hoffmann, M.

Holzwarth, R.

Hönninger, C.

C. Hönninger, R. Paschotta, F. Morier-Genoud, M. Moser, and U. Keller, “Q-switching stability limits of continuous-wave passive mode locking,” J. Opt. Soc. Am. B16(1), 46–56 (1999).
[CrossRef]

U. Keller, K. J. Weingarten, F. X. Kärtner, D. Kopf, B. Braun, I. D. Jung, R. Fluck, C. Hönninger, N. Matuschek, and J. Aus der Au, “Semiconductor saturable absorber mirrors (SESAMs) for femtosecond to nanosecond pulse generation in solid-state lasers,” IEEE J. Sel. Top. Quantum Electron.2(3), 435–453 (1996).
[CrossRef]

Hoogland, S.

S. Hoogland, S. Dhanjal, A. C. Tropper, S. J. Roberts, R. Häring, R. Paschotta, F. Morier-Genoud, and U. Keller, “Passively mode-locked diode-pumped surface-emitting semiconductor laser,” IEEE Photon. Technol. Lett.12(9), 1135–1137 (2000).
[CrossRef]

Huang, K. F.

Jung, I. D.

U. Keller, K. J. Weingarten, F. X. Kärtner, D. Kopf, B. Braun, I. D. Jung, R. Fluck, C. Hönninger, N. Matuschek, and J. Aus der Au, “Semiconductor saturable absorber mirrors (SESAMs) for femtosecond to nanosecond pulse generation in solid-state lasers,” IEEE J. Sel. Top. Quantum Electron.2(3), 435–453 (1996).
[CrossRef]

Kärtner, F. X.

U. Keller, K. J. Weingarten, F. X. Kärtner, D. Kopf, B. Braun, I. D. Jung, R. Fluck, C. Hönninger, N. Matuschek, and J. Aus der Au, “Semiconductor saturable absorber mirrors (SESAMs) for femtosecond to nanosecond pulse generation in solid-state lasers,” IEEE J. Sel. Top. Quantum Electron.2(3), 435–453 (1996).
[CrossRef]

Keller, U.

V. J. Wittwer, C. A. Zaugg, W. P. Pallmann, A. E. H. Oehler, B. Rudin, M. Hoffmann, M. Golling, Y. Barbarin, T. Sudmeyer, and U. Keller, “Timing jitter characterization of a free-running SESAM mode-locked VECSEL,” IEEE Photon. J.3(4), 658–664 (2011).
[CrossRef]

R. Aviles-Espinosa, G. Filippidis, C. Hamilton, G. Malcolm, K. J. Weingarten, T. Südmeyer, Y. Barbarin, U. Keller, S. I. C. O. Santos, D. Artigas, and P. Loza-Alvarez, “Compact ultrafast semiconductor disk laser: targeting GFP based nonlinear applications in living organisms,” Biomed. Opt. Express2(4), 739–747 (2011).
[CrossRef] [PubMed]

O. D. Sieber, V. J. Wittwer, M. Mangold, M. Hoffmann, M. Golling, T. Südmeyer, and U. Keller, “Femtosecond VECSEL with tunable multi-gigahertz repetition rate,” Opt. Express19(23), 23538–23543 (2011).
[CrossRef] [PubMed]

M. Hoffmann, O. D. Sieber, V. J. Wittwer, I. L. Krestnikov, D. A. Livshits, Y. Barbarin, T. Südmeyer, and U. Keller, “Femtosecond high-power quantum dot vertical external cavity surface emitting laser,” Opt. Express19(9), 8108–8116 (2011).
[CrossRef] [PubMed]

B. Rudin, V. J. Wittwer, D. J. H. C. Maas, M. Hoffmann, O. D. Sieber, Y. Barbarin, M. Golling, T. Südmeyer, and U. Keller, “High-power MIXSEL: an integrated ultrafast semiconductor laser with 6.4 W average power,” Opt. Express18(26), 27582–27588 (2010).
[CrossRef] [PubMed]

U. Keller, “Ultrafast solid-state laser oscillators: a success story for the last 20 years with no end in sight,” Appl. Phys. B100(1), 15–28 (2010).
[CrossRef]

S. V. Marchese, C. R. E. Baer, A. G. Engqvist, S. Hashimoto, D. J. H. C. Maas, M. Golling, T. Südmeyer, and U. Keller, “Femtosecond thin disk laser oscillator with pulse energy beyond the 10-microjoule level,” Opt. Express16(9), 6397–6407 (2008).
[CrossRef] [PubMed]

D. J. H. C. Maas, A.-R. Bellancourt, B. Rudin, M. Golling, H. J. Unold, T. Südmeyer, and U. Keller, “Vertical integration of ultrafast semiconductor lasers,” Appl. Phys. B88(4), 493–497 (2007).
[CrossRef]

D. Lorenser, D. J. H. C. Maas, H. J. Unold, A.-R. Bellancourt, B. Rudin, E. Gini, D. Ebling, and U. Keller, “50-GHz passively mode-locked surface-emitting semiconductor laser with 100 mW average output power,” IEEE J. Quantum Electron.42(8), 838–847 (2006).
[CrossRef]

A. Aschwanden, D. Lorenser, H. J. Unold, R. Paschotta, E. Gini, and U. Keller, “2.1-W picosecond passively mode-locked external-cavity semiconductor laser,” Opt. Lett.30(3), 272–274 (2005).
[CrossRef] [PubMed]

R. Häring, R. Paschotta, A. Aschwanden, E. Gini, F. Morier-Genoud, and U. Keller, “High–power passively mode–locked semiconductor lasers,” IEEE J. Quantum Electron.38(9), 1268–1275 (2002).
[CrossRef]

S. Hoogland, S. Dhanjal, A. C. Tropper, S. J. Roberts, R. Häring, R. Paschotta, F. Morier-Genoud, and U. Keller, “Passively mode-locked diode-pumped surface-emitting semiconductor laser,” IEEE Photon. Technol. Lett.12(9), 1135–1137 (2000).
[CrossRef]

C. Hönninger, R. Paschotta, F. Morier-Genoud, M. Moser, and U. Keller, “Q-switching stability limits of continuous-wave passive mode locking,” J. Opt. Soc. Am. B16(1), 46–56 (1999).
[CrossRef]

U. Keller, K. J. Weingarten, F. X. Kärtner, D. Kopf, B. Braun, I. D. Jung, R. Fluck, C. Hönninger, N. Matuschek, and J. Aus der Au, “Semiconductor saturable absorber mirrors (SESAMs) for femtosecond to nanosecond pulse generation in solid-state lasers,” IEEE J. Sel. Top. Quantum Electron.2(3), 435–453 (1996).
[CrossRef]

Killi, A.

Kleinbauer, J.

Klopp, P.

P. Klopp, U. Griebner, M. Zorn, and M. Weyers, “Pulse repetition rate up to 92 GHz or pulse duration shorter than 110 fs from a mode-locked semiconductor disk laser,” Appl. Phys. Lett.98(7), 071103 (2011).
[CrossRef]

P. Klopp, F. Saas, M. Zorn, M. Weyers, and U. Griebner, “290-fs pulses from a semiconductor disk laser,” Opt. Express16(8), 5770–5775 (2008).
[CrossRef] [PubMed]

Koch, M.

Koch, S. W.

M. Scheller, T. L. Wang, B. Kunert, W. Stolz, S. W. Koch, and J. V. Moloney, “Passively modelocked VECSEL emitting 682 fs pulses with 5.1 W of average output power,” Electron. Lett.48(10), 588–589 (2012).
[CrossRef]

Kopf, D.

U. Keller, K. J. Weingarten, F. X. Kärtner, D. Kopf, B. Braun, I. D. Jung, R. Fluck, C. Hönninger, N. Matuschek, and J. Aus der Au, “Semiconductor saturable absorber mirrors (SESAMs) for femtosecond to nanosecond pulse generation in solid-state lasers,” IEEE J. Sel. Top. Quantum Electron.2(3), 435–453 (1996).
[CrossRef]

Krestnikov, I. L.

Krumbholz, N.

Kumkar, M.

Kunert, B.

M. Scheller, T. L. Wang, B. Kunert, W. Stolz, S. W. Koch, and J. V. Moloney, “Passively modelocked VECSEL emitting 682 fs pulses with 5.1 W of average output power,” Electron. Lett.48(10), 588–589 (2012).
[CrossRef]

Kuznetsov, M.

M. Kuznetsov, F. Hakimi, R. Sprague, and A. Mooradian, “High-power (>0.5-W cw) diode-pumped vertical-external-cavity surface-emitting semiconductor lasers with circular TEM00 beams,” IEEE Photon. Technol. Lett.9(8), 1063–1065 (1997).
[CrossRef]

Lee, Y. C.

Liang, H. C.

Lin, K. Y.

Livshits, D. A.

Lorenser, D.

D. Lorenser, D. J. H. C. Maas, H. J. Unold, A.-R. Bellancourt, B. Rudin, E. Gini, D. Ebling, and U. Keller, “50-GHz passively mode-locked surface-emitting semiconductor laser with 100 mW average output power,” IEEE J. Quantum Electron.42(8), 838–847 (2006).
[CrossRef]

A. Aschwanden, D. Lorenser, H. J. Unold, R. Paschotta, E. Gini, and U. Keller, “2.1-W picosecond passively mode-locked external-cavity semiconductor laser,” Opt. Lett.30(3), 272–274 (2005).
[CrossRef] [PubMed]

Loza-Alvarez, P.

Maas, D. J. H. C.

B. Rudin, V. J. Wittwer, D. J. H. C. Maas, M. Hoffmann, O. D. Sieber, Y. Barbarin, M. Golling, T. Südmeyer, and U. Keller, “High-power MIXSEL: an integrated ultrafast semiconductor laser with 6.4 W average power,” Opt. Express18(26), 27582–27588 (2010).
[CrossRef] [PubMed]

S. V. Marchese, C. R. E. Baer, A. G. Engqvist, S. Hashimoto, D. J. H. C. Maas, M. Golling, T. Südmeyer, and U. Keller, “Femtosecond thin disk laser oscillator with pulse energy beyond the 10-microjoule level,” Opt. Express16(9), 6397–6407 (2008).
[CrossRef] [PubMed]

D. J. H. C. Maas, A.-R. Bellancourt, B. Rudin, M. Golling, H. J. Unold, T. Südmeyer, and U. Keller, “Vertical integration of ultrafast semiconductor lasers,” Appl. Phys. B88(4), 493–497 (2007).
[CrossRef]

D. Lorenser, D. J. H. C. Maas, H. J. Unold, A.-R. Bellancourt, B. Rudin, E. Gini, D. Ebling, and U. Keller, “50-GHz passively mode-locked surface-emitting semiconductor laser with 100 mW average output power,” IEEE J. Quantum Electron.42(8), 838–847 (2006).
[CrossRef]

Malcolm, G.

Mangold, M.

Marchese, S. V.

Matuschek, N.

U. Keller, K. J. Weingarten, F. X. Kärtner, D. Kopf, B. Braun, I. D. Jung, R. Fluck, C. Hönninger, N. Matuschek, and J. Aus der Au, “Semiconductor saturable absorber mirrors (SESAMs) for femtosecond to nanosecond pulse generation in solid-state lasers,” IEEE J. Sel. Top. Quantum Electron.2(3), 435–453 (1996).
[CrossRef]

Mei, M.

Mihoubi, Z.

A. H. Quarterman, K. G. Wilcox, V. Apostolopoulos, Z. Mihoubi, S. P. Elsmere, I. Farrer, D. A. Ritchie, and A. Tropper, “A passively mode-locked external-cavity semiconductor laser emitting 60-fs pulses,” Nat. Photonics3(12), 729–731 (2009).
[CrossRef]

A. H. Quarterman, K. G. Wilcox, S. P. Elsmere, Z. Mihoubi, and A. C. Tropper, “Active stabilisation and timing jitter characterisation of sub-500 fs pulse passively modelocked VECSEL,” Electron. Lett.44(19), 1135–1137 (2008).
[CrossRef]

Moloney, J. V.

M. Scheller, T. L. Wang, B. Kunert, W. Stolz, S. W. Koch, and J. V. Moloney, “Passively modelocked VECSEL emitting 682 fs pulses with 5.1 W of average output power,” Electron. Lett.48(10), 588–589 (2012).
[CrossRef]

Mooradian, A.

M. Kuznetsov, F. Hakimi, R. Sprague, and A. Mooradian, “High-power (>0.5-W cw) diode-pumped vertical-external-cavity surface-emitting semiconductor lasers with circular TEM00 beams,” IEEE Photon. Technol. Lett.9(8), 1063–1065 (1997).
[CrossRef]

Morier-Genoud, F.

R. Häring, R. Paschotta, A. Aschwanden, E. Gini, F. Morier-Genoud, and U. Keller, “High–power passively mode–locked semiconductor lasers,” IEEE J. Quantum Electron.38(9), 1268–1275 (2002).
[CrossRef]

S. Hoogland, S. Dhanjal, A. C. Tropper, S. J. Roberts, R. Häring, R. Paschotta, F. Morier-Genoud, and U. Keller, “Passively mode-locked diode-pumped surface-emitting semiconductor laser,” IEEE Photon. Technol. Lett.12(9), 1135–1137 (2000).
[CrossRef]

C. Hönninger, R. Paschotta, F. Morier-Genoud, M. Moser, and U. Keller, “Q-switching stability limits of continuous-wave passive mode locking,” J. Opt. Soc. Am. B16(1), 46–56 (1999).
[CrossRef]

Moser, M.

Neuhaus, J.

Oehler, A. E. H.

V. J. Wittwer, C. A. Zaugg, W. P. Pallmann, A. E. H. Oehler, B. Rudin, M. Hoffmann, M. Golling, Y. Barbarin, T. Sudmeyer, and U. Keller, “Timing jitter characterization of a free-running SESAM mode-locked VECSEL,” IEEE Photon. J.3(4), 658–664 (2011).
[CrossRef]

Okhotnikov, O. G.

Orsila, L.

Pallmann, W. P.

V. J. Wittwer, C. A. Zaugg, W. P. Pallmann, A. E. H. Oehler, B. Rudin, M. Hoffmann, M. Golling, Y. Barbarin, T. Sudmeyer, and U. Keller, “Timing jitter characterization of a free-running SESAM mode-locked VECSEL,” IEEE Photon. J.3(4), 658–664 (2011).
[CrossRef]

Paschotta, R.

A. Aschwanden, D. Lorenser, H. J. Unold, R. Paschotta, E. Gini, and U. Keller, “2.1-W picosecond passively mode-locked external-cavity semiconductor laser,” Opt. Lett.30(3), 272–274 (2005).
[CrossRef] [PubMed]

R. Häring, R. Paschotta, A. Aschwanden, E. Gini, F. Morier-Genoud, and U. Keller, “High–power passively mode–locked semiconductor lasers,” IEEE J. Quantum Electron.38(9), 1268–1275 (2002).
[CrossRef]

S. Hoogland, S. Dhanjal, A. C. Tropper, S. J. Roberts, R. Häring, R. Paschotta, F. Morier-Genoud, and U. Keller, “Passively mode-locked diode-pumped surface-emitting semiconductor laser,” IEEE Photon. Technol. Lett.12(9), 1135–1137 (2000).
[CrossRef]

C. Hönninger, R. Paschotta, F. Morier-Genoud, M. Moser, and U. Keller, “Q-switching stability limits of continuous-wave passive mode locking,” J. Opt. Soc. Am. B16(1), 46–56 (1999).
[CrossRef]

Quarterman, A. H.

K. G. Wilcox, A. H. Quarterman, V. Apostolopoulos, H. E. Beere, I. Farrer, D. A. Ritchie, and A. C. Tropper, “175 GHz, 400-fs-pulse harmonically mode-locked surface emitting semiconductor laser,” Opt. Express20(7), 7040–7045 (2012).
[CrossRef] [PubMed]

K. G. Wilcox, A. H. Quarterman, H. E. Beere, D. A. Ritchie, and A. C. Tropper, “Variable repetition frequency femtosecond-pulse surface emitting semiconductor laser,” Appl. Phys. Lett.99(13), 131107 (2011).
[CrossRef]

K. G. Wilcox, A. H. Quarterman, H. Beere, D. A. Ritchie, and A. C. Tropper, “High peak power femtosecond pulse passively mode-locked vertical-external-cavity surface-emitting laser,” IEEE Photon. Technol. Lett.22(14), 1021–1023 (2010).
[CrossRef]

A. H. Quarterman, K. G. Wilcox, V. Apostolopoulos, Z. Mihoubi, S. P. Elsmere, I. Farrer, D. A. Ritchie, and A. Tropper, “A passively mode-locked external-cavity semiconductor laser emitting 60-fs pulses,” Nat. Photonics3(12), 729–731 (2009).
[CrossRef]

A. H. Quarterman, K. G. Wilcox, S. P. Elsmere, Z. Mihoubi, and A. C. Tropper, “Active stabilisation and timing jitter characterisation of sub-500 fs pulse passively modelocked VECSEL,” Electron. Lett.44(19), 1135–1137 (2008).
[CrossRef]

Ritchie, D. A.

K. G. Wilcox, A. H. Quarterman, V. Apostolopoulos, H. E. Beere, I. Farrer, D. A. Ritchie, and A. C. Tropper, “175 GHz, 400-fs-pulse harmonically mode-locked surface emitting semiconductor laser,” Opt. Express20(7), 7040–7045 (2012).
[CrossRef] [PubMed]

K. G. Wilcox, A. H. Quarterman, H. E. Beere, D. A. Ritchie, and A. C. Tropper, “Variable repetition frequency femtosecond-pulse surface emitting semiconductor laser,” Appl. Phys. Lett.99(13), 131107 (2011).
[CrossRef]

K. G. Wilcox, A. H. Quarterman, H. Beere, D. A. Ritchie, and A. C. Tropper, “High peak power femtosecond pulse passively mode-locked vertical-external-cavity surface-emitting laser,” IEEE Photon. Technol. Lett.22(14), 1021–1023 (2010).
[CrossRef]

A. H. Quarterman, K. G. Wilcox, V. Apostolopoulos, Z. Mihoubi, S. P. Elsmere, I. Farrer, D. A. Ritchie, and A. Tropper, “A passively mode-locked external-cavity semiconductor laser emitting 60-fs pulses,” Nat. Photonics3(12), 729–731 (2009).
[CrossRef]

Roberts, S. J.

S. Hoogland, S. Dhanjal, A. C. Tropper, S. J. Roberts, R. Häring, R. Paschotta, F. Morier-Genoud, and U. Keller, “Passively mode-locked diode-pumped surface-emitting semiconductor laser,” IEEE Photon. Technol. Lett.12(9), 1135–1137 (2000).
[CrossRef]

Rudin, B.

V. J. Wittwer, C. A. Zaugg, W. P. Pallmann, A. E. H. Oehler, B. Rudin, M. Hoffmann, M. Golling, Y. Barbarin, T. Sudmeyer, and U. Keller, “Timing jitter characterization of a free-running SESAM mode-locked VECSEL,” IEEE Photon. J.3(4), 658–664 (2011).
[CrossRef]

B. Rudin, V. J. Wittwer, D. J. H. C. Maas, M. Hoffmann, O. D. Sieber, Y. Barbarin, M. Golling, T. Südmeyer, and U. Keller, “High-power MIXSEL: an integrated ultrafast semiconductor laser with 6.4 W average power,” Opt. Express18(26), 27582–27588 (2010).
[CrossRef] [PubMed]

D. J. H. C. Maas, A.-R. Bellancourt, B. Rudin, M. Golling, H. J. Unold, T. Südmeyer, and U. Keller, “Vertical integration of ultrafast semiconductor lasers,” Appl. Phys. B88(4), 493–497 (2007).
[CrossRef]

D. Lorenser, D. J. H. C. Maas, H. J. Unold, A.-R. Bellancourt, B. Rudin, E. Gini, D. Ebling, and U. Keller, “50-GHz passively mode-locked surface-emitting semiconductor laser with 100 mW average output power,” IEEE J. Quantum Electron.42(8), 838–847 (2006).
[CrossRef]

Saarinen, E. J.

Saas, F.

Santos, S. I. C. O.

Scheller, M.

M. Scheller, T. L. Wang, B. Kunert, W. Stolz, S. W. Koch, and J. V. Moloney, “Passively modelocked VECSEL emitting 682 fs pulses with 5.1 W of average output power,” Electron. Lett.48(10), 588–589 (2012).
[CrossRef]

Schulte, H. J.

Sieber, O. D.

Sprague, R.

M. Kuznetsov, F. Hakimi, R. Sprague, and A. Mooradian, “High-power (>0.5-W cw) diode-pumped vertical-external-cavity surface-emitting semiconductor lasers with circular TEM00 beams,” IEEE Photon. Technol. Lett.9(8), 1063–1065 (1997).
[CrossRef]

Stolz, W.

M. Scheller, T. L. Wang, B. Kunert, W. Stolz, S. W. Koch, and J. V. Moloney, “Passively modelocked VECSEL emitting 682 fs pulses with 5.1 W of average output power,” Electron. Lett.48(10), 588–589 (2012).
[CrossRef]

Su, K. W.

Sudmeyer, T.

V. J. Wittwer, C. A. Zaugg, W. P. Pallmann, A. E. H. Oehler, B. Rudin, M. Hoffmann, M. Golling, Y. Barbarin, T. Sudmeyer, and U. Keller, “Timing jitter characterization of a free-running SESAM mode-locked VECSEL,” IEEE Photon. J.3(4), 658–664 (2011).
[CrossRef]

Südmeyer, T.

M. Hoffmann, O. D. Sieber, V. J. Wittwer, I. L. Krestnikov, D. A. Livshits, Y. Barbarin, T. Südmeyer, and U. Keller, “Femtosecond high-power quantum dot vertical external cavity surface emitting laser,” Opt. Express19(9), 8108–8116 (2011).
[CrossRef] [PubMed]

R. Aviles-Espinosa, G. Filippidis, C. Hamilton, G. Malcolm, K. J. Weingarten, T. Südmeyer, Y. Barbarin, U. Keller, S. I. C. O. Santos, D. Artigas, and P. Loza-Alvarez, “Compact ultrafast semiconductor disk laser: targeting GFP based nonlinear applications in living organisms,” Biomed. Opt. Express2(4), 739–747 (2011).
[CrossRef] [PubMed]

O. D. Sieber, V. J. Wittwer, M. Mangold, M. Hoffmann, M. Golling, T. Südmeyer, and U. Keller, “Femtosecond VECSEL with tunable multi-gigahertz repetition rate,” Opt. Express19(23), 23538–23543 (2011).
[CrossRef] [PubMed]

B. Rudin, V. J. Wittwer, D. J. H. C. Maas, M. Hoffmann, O. D. Sieber, Y. Barbarin, M. Golling, T. Südmeyer, and U. Keller, “High-power MIXSEL: an integrated ultrafast semiconductor laser with 6.4 W average power,” Opt. Express18(26), 27582–27588 (2010).
[CrossRef] [PubMed]

S. V. Marchese, C. R. E. Baer, A. G. Engqvist, S. Hashimoto, D. J. H. C. Maas, M. Golling, T. Südmeyer, and U. Keller, “Femtosecond thin disk laser oscillator with pulse energy beyond the 10-microjoule level,” Opt. Express16(9), 6397–6407 (2008).
[CrossRef] [PubMed]

D. J. H. C. Maas, A.-R. Bellancourt, B. Rudin, M. Golling, H. J. Unold, T. Südmeyer, and U. Keller, “Vertical integration of ultrafast semiconductor lasers,” Appl. Phys. B88(4), 493–497 (2007).
[CrossRef]

Suomalainen, S.

Sutter, D.

Sutter, D. H.

Tropper, A.

A. H. Quarterman, K. G. Wilcox, V. Apostolopoulos, Z. Mihoubi, S. P. Elsmere, I. Farrer, D. A. Ritchie, and A. Tropper, “A passively mode-locked external-cavity semiconductor laser emitting 60-fs pulses,” Nat. Photonics3(12), 729–731 (2009).
[CrossRef]

Tropper, A. C.

K. G. Wilcox, A. H. Quarterman, V. Apostolopoulos, H. E. Beere, I. Farrer, D. A. Ritchie, and A. C. Tropper, “175 GHz, 400-fs-pulse harmonically mode-locked surface emitting semiconductor laser,” Opt. Express20(7), 7040–7045 (2012).
[CrossRef] [PubMed]

K. G. Wilcox, A. H. Quarterman, H. E. Beere, D. A. Ritchie, and A. C. Tropper, “Variable repetition frequency femtosecond-pulse surface emitting semiconductor laser,” Appl. Phys. Lett.99(13), 131107 (2011).
[CrossRef]

K. G. Wilcox, A. H. Quarterman, H. Beere, D. A. Ritchie, and A. C. Tropper, “High peak power femtosecond pulse passively mode-locked vertical-external-cavity surface-emitting laser,” IEEE Photon. Technol. Lett.22(14), 1021–1023 (2010).
[CrossRef]

A. H. Quarterman, K. G. Wilcox, S. P. Elsmere, Z. Mihoubi, and A. C. Tropper, “Active stabilisation and timing jitter characterisation of sub-500 fs pulse passively modelocked VECSEL,” Electron. Lett.44(19), 1135–1137 (2008).
[CrossRef]

S. Hoogland, S. Dhanjal, A. C. Tropper, S. J. Roberts, R. Häring, R. Paschotta, F. Morier-Genoud, and U. Keller, “Passively mode-locked diode-pumped surface-emitting semiconductor laser,” IEEE Photon. Technol. Lett.12(9), 1135–1137 (2000).
[CrossRef]

Unold, H. J.

D. J. H. C. Maas, A.-R. Bellancourt, B. Rudin, M. Golling, H. J. Unold, T. Südmeyer, and U. Keller, “Vertical integration of ultrafast semiconductor lasers,” Appl. Phys. B88(4), 493–497 (2007).
[CrossRef]

D. Lorenser, D. J. H. C. Maas, H. J. Unold, A.-R. Bellancourt, B. Rudin, E. Gini, D. Ebling, and U. Keller, “50-GHz passively mode-locked surface-emitting semiconductor laser with 100 mW average output power,” IEEE J. Quantum Electron.42(8), 838–847 (2006).
[CrossRef]

A. Aschwanden, D. Lorenser, H. J. Unold, R. Paschotta, E. Gini, and U. Keller, “2.1-W picosecond passively mode-locked external-cavity semiconductor laser,” Opt. Lett.30(3), 272–274 (2005).
[CrossRef] [PubMed]

Wang, T. L.

M. Scheller, T. L. Wang, B. Kunert, W. Stolz, S. W. Koch, and J. V. Moloney, “Passively modelocked VECSEL emitting 682 fs pulses with 5.1 W of average output power,” Electron. Lett.48(10), 588–589 (2012).
[CrossRef]

Weiler, S.

Weingarten, K. J.

R. Aviles-Espinosa, G. Filippidis, C. Hamilton, G. Malcolm, K. J. Weingarten, T. Südmeyer, Y. Barbarin, U. Keller, S. I. C. O. Santos, D. Artigas, and P. Loza-Alvarez, “Compact ultrafast semiconductor disk laser: targeting GFP based nonlinear applications in living organisms,” Biomed. Opt. Express2(4), 739–747 (2011).
[CrossRef] [PubMed]

U. Keller, K. J. Weingarten, F. X. Kärtner, D. Kopf, B. Braun, I. D. Jung, R. Fluck, C. Hönninger, N. Matuschek, and J. Aus der Au, “Semiconductor saturable absorber mirrors (SESAMs) for femtosecond to nanosecond pulse generation in solid-state lasers,” IEEE J. Sel. Top. Quantum Electron.2(3), 435–453 (1996).
[CrossRef]

Weyers, M.

P. Klopp, U. Griebner, M. Zorn, and M. Weyers, “Pulse repetition rate up to 92 GHz or pulse duration shorter than 110 fs from a mode-locked semiconductor disk laser,” Appl. Phys. Lett.98(7), 071103 (2011).
[CrossRef]

P. Klopp, F. Saas, M. Zorn, M. Weyers, and U. Griebner, “290-fs pulses from a semiconductor disk laser,” Opt. Express16(8), 5770–5775 (2008).
[CrossRef] [PubMed]

Wilcox, K. G.

K. G. Wilcox, A. H. Quarterman, V. Apostolopoulos, H. E. Beere, I. Farrer, D. A. Ritchie, and A. C. Tropper, “175 GHz, 400-fs-pulse harmonically mode-locked surface emitting semiconductor laser,” Opt. Express20(7), 7040–7045 (2012).
[CrossRef] [PubMed]

K. G. Wilcox, A. H. Quarterman, H. E. Beere, D. A. Ritchie, and A. C. Tropper, “Variable repetition frequency femtosecond-pulse surface emitting semiconductor laser,” Appl. Phys. Lett.99(13), 131107 (2011).
[CrossRef]

K. G. Wilcox, A. H. Quarterman, H. Beere, D. A. Ritchie, and A. C. Tropper, “High peak power femtosecond pulse passively mode-locked vertical-external-cavity surface-emitting laser,” IEEE Photon. Technol. Lett.22(14), 1021–1023 (2010).
[CrossRef]

A. H. Quarterman, K. G. Wilcox, V. Apostolopoulos, Z. Mihoubi, S. P. Elsmere, I. Farrer, D. A. Ritchie, and A. Tropper, “A passively mode-locked external-cavity semiconductor laser emitting 60-fs pulses,” Nat. Photonics3(12), 729–731 (2009).
[CrossRef]

A. H. Quarterman, K. G. Wilcox, S. P. Elsmere, Z. Mihoubi, and A. C. Tropper, “Active stabilisation and timing jitter characterisation of sub-500 fs pulse passively modelocked VECSEL,” Electron. Lett.44(19), 1135–1137 (2008).
[CrossRef]

Wilk, R.

Wittwer, V. J.

Zaugg, C. A.

V. J. Wittwer, C. A. Zaugg, W. P. Pallmann, A. E. H. Oehler, B. Rudin, M. Hoffmann, M. Golling, Y. Barbarin, T. Sudmeyer, and U. Keller, “Timing jitter characterization of a free-running SESAM mode-locked VECSEL,” IEEE Photon. J.3(4), 658–664 (2011).
[CrossRef]

Zhang, J.

Zorn, M.

P. Klopp, U. Griebner, M. Zorn, and M. Weyers, “Pulse repetition rate up to 92 GHz or pulse duration shorter than 110 fs from a mode-locked semiconductor disk laser,” Appl. Phys. Lett.98(7), 071103 (2011).
[CrossRef]

P. Klopp, F. Saas, M. Zorn, M. Weyers, and U. Griebner, “290-fs pulses from a semiconductor disk laser,” Opt. Express16(8), 5770–5775 (2008).
[CrossRef] [PubMed]

Appl. Opt. (1)

Appl. Phys. B (2)

D. J. H. C. Maas, A.-R. Bellancourt, B. Rudin, M. Golling, H. J. Unold, T. Südmeyer, and U. Keller, “Vertical integration of ultrafast semiconductor lasers,” Appl. Phys. B88(4), 493–497 (2007).
[CrossRef]

U. Keller, “Ultrafast solid-state laser oscillators: a success story for the last 20 years with no end in sight,” Appl. Phys. B100(1), 15–28 (2010).
[CrossRef]

Appl. Phys. Lett. (2)

P. Klopp, U. Griebner, M. Zorn, and M. Weyers, “Pulse repetition rate up to 92 GHz or pulse duration shorter than 110 fs from a mode-locked semiconductor disk laser,” Appl. Phys. Lett.98(7), 071103 (2011).
[CrossRef]

K. G. Wilcox, A. H. Quarterman, H. E. Beere, D. A. Ritchie, and A. C. Tropper, “Variable repetition frequency femtosecond-pulse surface emitting semiconductor laser,” Appl. Phys. Lett.99(13), 131107 (2011).
[CrossRef]

Biomed. Opt. Express (1)

Electron. Lett. (2)

M. Scheller, T. L. Wang, B. Kunert, W. Stolz, S. W. Koch, and J. V. Moloney, “Passively modelocked VECSEL emitting 682 fs pulses with 5.1 W of average output power,” Electron. Lett.48(10), 588–589 (2012).
[CrossRef]

A. H. Quarterman, K. G. Wilcox, S. P. Elsmere, Z. Mihoubi, and A. C. Tropper, “Active stabilisation and timing jitter characterisation of sub-500 fs pulse passively modelocked VECSEL,” Electron. Lett.44(19), 1135–1137 (2008).
[CrossRef]

IEEE J. Quantum Electron. (2)

D. Lorenser, D. J. H. C. Maas, H. J. Unold, A.-R. Bellancourt, B. Rudin, E. Gini, D. Ebling, and U. Keller, “50-GHz passively mode-locked surface-emitting semiconductor laser with 100 mW average output power,” IEEE J. Quantum Electron.42(8), 838–847 (2006).
[CrossRef]

R. Häring, R. Paschotta, A. Aschwanden, E. Gini, F. Morier-Genoud, and U. Keller, “High–power passively mode–locked semiconductor lasers,” IEEE J. Quantum Electron.38(9), 1268–1275 (2002).
[CrossRef]

IEEE J. Sel. Top. Quantum Electron. (1)

U. Keller, K. J. Weingarten, F. X. Kärtner, D. Kopf, B. Braun, I. D. Jung, R. Fluck, C. Hönninger, N. Matuschek, and J. Aus der Au, “Semiconductor saturable absorber mirrors (SESAMs) for femtosecond to nanosecond pulse generation in solid-state lasers,” IEEE J. Sel. Top. Quantum Electron.2(3), 435–453 (1996).
[CrossRef]

IEEE Photon. J. (1)

V. J. Wittwer, C. A. Zaugg, W. P. Pallmann, A. E. H. Oehler, B. Rudin, M. Hoffmann, M. Golling, Y. Barbarin, T. Sudmeyer, and U. Keller, “Timing jitter characterization of a free-running SESAM mode-locked VECSEL,” IEEE Photon. J.3(4), 658–664 (2011).
[CrossRef]

IEEE Photon. Technol. Lett. (3)

S. Hoogland, S. Dhanjal, A. C. Tropper, S. J. Roberts, R. Häring, R. Paschotta, F. Morier-Genoud, and U. Keller, “Passively mode-locked diode-pumped surface-emitting semiconductor laser,” IEEE Photon. Technol. Lett.12(9), 1135–1137 (2000).
[CrossRef]

K. G. Wilcox, A. H. Quarterman, H. Beere, D. A. Ritchie, and A. C. Tropper, “High peak power femtosecond pulse passively mode-locked vertical-external-cavity surface-emitting laser,” IEEE Photon. Technol. Lett.22(14), 1021–1023 (2010).
[CrossRef]

M. Kuznetsov, F. Hakimi, R. Sprague, and A. Mooradian, “High-power (>0.5-W cw) diode-pumped vertical-external-cavity surface-emitting semiconductor lasers with circular TEM00 beams,” IEEE Photon. Technol. Lett.9(8), 1063–1065 (1997).
[CrossRef]

J. Opt. Soc. Am. B (1)

Nat. Photonics (1)

A. H. Quarterman, K. G. Wilcox, V. Apostolopoulos, Z. Mihoubi, S. P. Elsmere, I. Farrer, D. A. Ritchie, and A. Tropper, “A passively mode-locked external-cavity semiconductor laser emitting 60-fs pulses,” Nat. Photonics3(12), 729–731 (2009).
[CrossRef]

Opt. Express (9)

K. G. Wilcox, A. H. Quarterman, V. Apostolopoulos, H. E. Beere, I. Farrer, D. A. Ritchie, and A. C. Tropper, “175 GHz, 400-fs-pulse harmonically mode-locked surface emitting semiconductor laser,” Opt. Express20(7), 7040–7045 (2012).
[CrossRef] [PubMed]

E. J. Saarinen, A. Härkönen, R. Herda, S. Suomalainen, L. Orsila, T. Hakulinen, M. Guina, and O. G. Okhotnikov, “Harmonically mode-locked VECSELs for multi-GHz pulse train generation,” Opt. Express15(3), 955–964 (2007).
[CrossRef] [PubMed]

M. Hoffmann, O. D. Sieber, V. J. Wittwer, I. L. Krestnikov, D. A. Livshits, Y. Barbarin, T. Südmeyer, and U. Keller, “Femtosecond high-power quantum dot vertical external cavity surface emitting laser,” Opt. Express19(9), 8108–8116 (2011).
[CrossRef] [PubMed]

O. D. Sieber, V. J. Wittwer, M. Mangold, M. Hoffmann, M. Golling, T. Südmeyer, and U. Keller, “Femtosecond VECSEL with tunable multi-gigahertz repetition rate,” Opt. Express19(23), 23538–23543 (2011).
[CrossRef] [PubMed]

P. Klopp, F. Saas, M. Zorn, M. Weyers, and U. Griebner, “290-fs pulses from a semiconductor disk laser,” Opt. Express16(8), 5770–5775 (2008).
[CrossRef] [PubMed]

S. V. Marchese, C. R. E. Baer, A. G. Engqvist, S. Hashimoto, D. J. H. C. Maas, M. Golling, T. Südmeyer, and U. Keller, “Femtosecond thin disk laser oscillator with pulse energy beyond the 10-microjoule level,” Opt. Express16(9), 6397–6407 (2008).
[CrossRef] [PubMed]

J. Neuhaus, D. Bauer, J. Zhang, A. Killi, J. Kleinbauer, M. Kumkar, S. Weiler, M. Guina, D. H. Sutter, and T. Dekorsy, “Subpicosecond thin-disk laser oscillator with pulse energies of up to 25.9 microjoules by use of an active multipass geometry,” Opt. Express16(25), 20530–20539 (2008).
[CrossRef] [PubMed]

T. Hochrein, R. Wilk, M. Mei, R. Holzwarth, N. Krumbholz, and M. Koch, “Optical sampling by laser cavity tuning,” Opt. Express18(2), 1613–1617 (2010).
[CrossRef] [PubMed]

B. Rudin, V. J. Wittwer, D. J. H. C. Maas, M. Hoffmann, O. D. Sieber, Y. Barbarin, M. Golling, T. Südmeyer, and U. Keller, “High-power MIXSEL: an integrated ultrafast semiconductor laser with 6.4 W average power,” Opt. Express18(26), 27582–27588 (2010).
[CrossRef] [PubMed]

Opt. Lett. (3)

Other (1)

A. Garnache, S. Hoogland, A. C. Tropper, J. M. Gerard, V. Thierry-Mieg, and J. S. Roberts, “Pico-second passively mode locked surface-emitting laser with self-assembled semiconductor quantum dot absorber,” in CLEO/Europe-EQEC(2001), p. postdeadline paper.

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Figures (3)

Fig. 1
Fig. 1

Schematic of the multipass cavity design. (a) Sub-cavity with two gain-passes per cavity round trip used for alignment purpose, repetition rate 500 MHz (i.e. cavity length 30 cm). (b) Full multipass cavity with four gain-passes per round trip, repetition rate of 250 MHz (i.e. cavity length of 60 cm).

Fig. 2
Fig. 2

Sagittal (Ws) and tangential (Wt) beam mode evolution as a function of the beam position. (a) 250 MHz cavity with small beam waist on SESAM (~130 µm) and (b) corresponding cavity with expanded beam waist on the SESAM (~300 µm).

Fig. 3
Fig. 3

Modelocking result for 400 mW average output power. (a) Microwave spectrum analyzer (MSA) signal centered around 253.2 MHz, span 500 kHz and resolution bandwidth (RBW) of 10 kHz, (b) MSA signal with span of 300 MHz and RBW of 3 MHz. (c) intensity autocorrelation signal (blue) and sech2 fit corresponding to a pulse duration of 11.2 ps. (d) Optical spectrum with FWHM of 0.53 nm corresponding to a time-bandwidth product (TBP) of 2.07.

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