Abstract

We added a reference to declare the source of the photograph at the lower-right corner of Fig. 1.

© 2012 OSA

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References

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  1. J. Song, X. Zhou, Y. Z. Li, and X. Li, “On-chip spectrometer with a circular-hole defect for optical sensing applications,” Opt. Express20(17), 19226–19231 (2012).
    [CrossRef]
  2. A. C. Bedoya, M. Y. Ling, J. Brouckaert, N. A. Yebo, D. V. Thourhout, and R. G. Baets, “Biodiesel sensing using silicon-on-insulator technologies,” Proc. SPIE7366, 73660D (2009).

2012 (1)

2009 (1)

A. C. Bedoya, M. Y. Ling, J. Brouckaert, N. A. Yebo, D. V. Thourhout, and R. G. Baets, “Biodiesel sensing using silicon-on-insulator technologies,” Proc. SPIE7366, 73660D (2009).

Baets, R. G.

A. C. Bedoya, M. Y. Ling, J. Brouckaert, N. A. Yebo, D. V. Thourhout, and R. G. Baets, “Biodiesel sensing using silicon-on-insulator technologies,” Proc. SPIE7366, 73660D (2009).

Bedoya, A. C.

A. C. Bedoya, M. Y. Ling, J. Brouckaert, N. A. Yebo, D. V. Thourhout, and R. G. Baets, “Biodiesel sensing using silicon-on-insulator technologies,” Proc. SPIE7366, 73660D (2009).

Brouckaert, J.

A. C. Bedoya, M. Y. Ling, J. Brouckaert, N. A. Yebo, D. V. Thourhout, and R. G. Baets, “Biodiesel sensing using silicon-on-insulator technologies,” Proc. SPIE7366, 73660D (2009).

Li, X.

Li, Y. Z.

Ling, M. Y.

A. C. Bedoya, M. Y. Ling, J. Brouckaert, N. A. Yebo, D. V. Thourhout, and R. G. Baets, “Biodiesel sensing using silicon-on-insulator technologies,” Proc. SPIE7366, 73660D (2009).

Song, J.

Thourhout, D. V.

A. C. Bedoya, M. Y. Ling, J. Brouckaert, N. A. Yebo, D. V. Thourhout, and R. G. Baets, “Biodiesel sensing using silicon-on-insulator technologies,” Proc. SPIE7366, 73660D (2009).

Yebo, N. A.

A. C. Bedoya, M. Y. Ling, J. Brouckaert, N. A. Yebo, D. V. Thourhout, and R. G. Baets, “Biodiesel sensing using silicon-on-insulator technologies,” Proc. SPIE7366, 73660D (2009).

Zhou, X.

Opt. Express (1)

Proc. SPIE (1)

A. C. Bedoya, M. Y. Ling, J. Brouckaert, N. A. Yebo, D. V. Thourhout, and R. G. Baets, “Biodiesel sensing using silicon-on-insulator technologies,” Proc. SPIE7366, 73660D (2009).

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