Abstract

Femtosecond laser-irradiation-induced phase change of new environment friendly Te-free amorphous Ga-Sb-Se films is studied by coherent phonon spectroscopy. New coherent optical phonons (COP) occur when laser irradiation power reaches some threshold, implying laser-induced phase change taken place. Pump power dependence of COP dynamics reveals the phase change as crystallization and crystallization quality is comparable to one of annealing crystallization, showing application potential of Ga-Sb-Se films in optical phase change memory. The laser-irradiated crystallization of different component Ga-Sb-Se films is studied. It is found crystallization threshold power depends on Sb content, implying Sb-content control of the crystallization temperature of Ga-Sb-Se films.

© 2012 OSA

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  1. Y. G. Lu, S. N. Song, Y. F. Gong, Z. T. Song, F. Rao, L. C. Wu, B. Liu, and D. N. Yao, “Ga-Sb-Se material for low-power phase change memory,” Appl. Phys. Lett.99(24), 243111 (2011).
    [CrossRef]
  2. S. Fujimori, S. Yagi, H. Yamazaki, and N. Funakoshi, “Crystallization process of Sb-Te alloy films for optical storage,” J. Appl. Phys.64(3), 1000–1004 (1988).
    [CrossRef]
  3. C. B. Peng, L. Cheng, and M. Mansuripur, “Experimental and theoretical investigations of laser-induced crystallization and amorphization in phase-change optical recording media,” J. Appl. Phys.82(9), 4183–4191 (1997).
    [CrossRef]
  4. L. P. Shi, T. C. Chong, X. Hu, and H. B. Yao, “Study of the dynamic crystallization behavior of GeSbTe phase change optical disk,” Jpn. J. Appl. Phys.42(Part 1, No. 2B), 841–847 (2003).
    [CrossRef]
  5. M. L. Tseng, B. H. Chen, C. H. Chu, C. M. Chang, W. C. Lin, N. N. Chu, M. Mansuripur, A. Q. Liu, and D. P. Tsai, “Fabrication of phase-change chalcogenide Ge2Sb2Te5 patterns by laser-induced forward transfer,” Opt. Express19(18), 16975–16984 (2011).
    [CrossRef] [PubMed]
  6. W. L. Zhu, C. Z. Wang, M. C. Sun, S. M. Li, J. W. Zhai, and T. S. Lai, “Characterization of femtosecond laser-irradiation crystallization and structure of multiple periodic Si/Sb80Te20 nanocomposite films by coherent phonon spectroscopy,” Opt. Express19(23), 22684–22691 (2011).
    [CrossRef] [PubMed]
  7. M. Först, T. Dekorsy, C. Trappe, M. Laurenzis, H. Kurz, and B. Béchevet, “Phase change in Ge2Sb2Te5 films investigated by coherent phonon spectroscopy,” Appl. Phys. Lett.77(13), 1964–1966 (2000).
    [CrossRef]
  8. Y. W. Li, V. A. Stoica, L. Endicott, G. Y. Wang, C. Uher, and R. Clarke, “Coherent optical phonon spectroscopy studies of femtosecond-laser modified Sb2Te3 films,” Appl. Phys. Lett.97(17), 171908 (2010).
    [CrossRef]
  9. Y. G. Wang, X. F. Xu, and R. Venkatasubramanian, “Reduction in coherent phonon lifetime in Bi2Te3/Sb2Te3 superlattices,” Appl. Phys. Lett.93(11), 113114 (2008).
    [CrossRef]
  10. G. A. Garrett, T. F. Albrecht, J. F. Whitaker, and R. Merlin, “Coherent THz phonons driven by light pulses and the Sb problem: what is the mechanism?,” Phys. Rev. Lett.77(17), 3661–3664 (1996).
    [CrossRef] [PubMed]
  11. H. J. Zeiger, J. Vidal, T. K. Cheng, E. P. Ippen, G. Dresselhaus, and M. S. Dresselhaus, “Theory for displacive excitation of coherent phonons,” Phys. Rev. B Condens. Matter45(2), 768–778 (1992).
    [CrossRef] [PubMed]
  12. M. Hase, Y. Miyamoto, and J. Tominaga, “Ultrafast dephasing of coherent optical phonons in atomically controlled GeTe/Sb2Te3 superlattices,” Phys. Rev. B79(17), 174112 (2009).
    [CrossRef]
  13. K. Ishioka, M. Kitajima, and O. V. Misochko, “Coherent A1g and Eg phonons of antimony,” J. Appl. Phys.103(12), 123505 (2008).
    [CrossRef]
  14. L. van Pieterson, M. H. R. Lankhorst, M. van Schijndel, A. E. T. Kuiper, and J. H. J. Roosen, “Phase-change recording materials with a growth-dominated crystallization mechanism: a material review,” J. Appl. Phys.97(8), 083520 (2005).
    [CrossRef]
  15. M. S. Youm, Y. T. Kim, Y. H. Kim, and M. Y. Sung, “Effects of excess Sb on crystallization of δ-phase SbTe binary thin films,” Phys. Status Solidi A205(7), 1636–1640 (2008).
    [CrossRef]
  16. M. J. Kang, S. Y. Choi, D. Wamwangi, K. Wang, C. Steimer, and M. Wuttig, “Structural transformation of SbxSe100−x thin films for phase change nonvolatile memory applications,” J. Appl. Phys.98(1), 014904 (2005).
    [CrossRef]

2011 (3)

2010 (1)

Y. W. Li, V. A. Stoica, L. Endicott, G. Y. Wang, C. Uher, and R. Clarke, “Coherent optical phonon spectroscopy studies of femtosecond-laser modified Sb2Te3 films,” Appl. Phys. Lett.97(17), 171908 (2010).
[CrossRef]

2009 (1)

M. Hase, Y. Miyamoto, and J. Tominaga, “Ultrafast dephasing of coherent optical phonons in atomically controlled GeTe/Sb2Te3 superlattices,” Phys. Rev. B79(17), 174112 (2009).
[CrossRef]

2008 (3)

K. Ishioka, M. Kitajima, and O. V. Misochko, “Coherent A1g and Eg phonons of antimony,” J. Appl. Phys.103(12), 123505 (2008).
[CrossRef]

M. S. Youm, Y. T. Kim, Y. H. Kim, and M. Y. Sung, “Effects of excess Sb on crystallization of δ-phase SbTe binary thin films,” Phys. Status Solidi A205(7), 1636–1640 (2008).
[CrossRef]

Y. G. Wang, X. F. Xu, and R. Venkatasubramanian, “Reduction in coherent phonon lifetime in Bi2Te3/Sb2Te3 superlattices,” Appl. Phys. Lett.93(11), 113114 (2008).
[CrossRef]

2005 (2)

M. J. Kang, S. Y. Choi, D. Wamwangi, K. Wang, C. Steimer, and M. Wuttig, “Structural transformation of SbxSe100−x thin films for phase change nonvolatile memory applications,” J. Appl. Phys.98(1), 014904 (2005).
[CrossRef]

L. van Pieterson, M. H. R. Lankhorst, M. van Schijndel, A. E. T. Kuiper, and J. H. J. Roosen, “Phase-change recording materials with a growth-dominated crystallization mechanism: a material review,” J. Appl. Phys.97(8), 083520 (2005).
[CrossRef]

2003 (1)

L. P. Shi, T. C. Chong, X. Hu, and H. B. Yao, “Study of the dynamic crystallization behavior of GeSbTe phase change optical disk,” Jpn. J. Appl. Phys.42(Part 1, No. 2B), 841–847 (2003).
[CrossRef]

2000 (1)

M. Först, T. Dekorsy, C. Trappe, M. Laurenzis, H. Kurz, and B. Béchevet, “Phase change in Ge2Sb2Te5 films investigated by coherent phonon spectroscopy,” Appl. Phys. Lett.77(13), 1964–1966 (2000).
[CrossRef]

1997 (1)

C. B. Peng, L. Cheng, and M. Mansuripur, “Experimental and theoretical investigations of laser-induced crystallization and amorphization in phase-change optical recording media,” J. Appl. Phys.82(9), 4183–4191 (1997).
[CrossRef]

1996 (1)

G. A. Garrett, T. F. Albrecht, J. F. Whitaker, and R. Merlin, “Coherent THz phonons driven by light pulses and the Sb problem: what is the mechanism?,” Phys. Rev. Lett.77(17), 3661–3664 (1996).
[CrossRef] [PubMed]

1992 (1)

H. J. Zeiger, J. Vidal, T. K. Cheng, E. P. Ippen, G. Dresselhaus, and M. S. Dresselhaus, “Theory for displacive excitation of coherent phonons,” Phys. Rev. B Condens. Matter45(2), 768–778 (1992).
[CrossRef] [PubMed]

1988 (1)

S. Fujimori, S. Yagi, H. Yamazaki, and N. Funakoshi, “Crystallization process of Sb-Te alloy films for optical storage,” J. Appl. Phys.64(3), 1000–1004 (1988).
[CrossRef]

Albrecht, T. F.

G. A. Garrett, T. F. Albrecht, J. F. Whitaker, and R. Merlin, “Coherent THz phonons driven by light pulses and the Sb problem: what is the mechanism?,” Phys. Rev. Lett.77(17), 3661–3664 (1996).
[CrossRef] [PubMed]

Béchevet, B.

M. Först, T. Dekorsy, C. Trappe, M. Laurenzis, H. Kurz, and B. Béchevet, “Phase change in Ge2Sb2Te5 films investigated by coherent phonon spectroscopy,” Appl. Phys. Lett.77(13), 1964–1966 (2000).
[CrossRef]

Chang, C. M.

Chen, B. H.

Cheng, L.

C. B. Peng, L. Cheng, and M. Mansuripur, “Experimental and theoretical investigations of laser-induced crystallization and amorphization in phase-change optical recording media,” J. Appl. Phys.82(9), 4183–4191 (1997).
[CrossRef]

Cheng, T. K.

H. J. Zeiger, J. Vidal, T. K. Cheng, E. P. Ippen, G. Dresselhaus, and M. S. Dresselhaus, “Theory for displacive excitation of coherent phonons,” Phys. Rev. B Condens. Matter45(2), 768–778 (1992).
[CrossRef] [PubMed]

Choi, S. Y.

M. J. Kang, S. Y. Choi, D. Wamwangi, K. Wang, C. Steimer, and M. Wuttig, “Structural transformation of SbxSe100−x thin films for phase change nonvolatile memory applications,” J. Appl. Phys.98(1), 014904 (2005).
[CrossRef]

Chong, T. C.

L. P. Shi, T. C. Chong, X. Hu, and H. B. Yao, “Study of the dynamic crystallization behavior of GeSbTe phase change optical disk,” Jpn. J. Appl. Phys.42(Part 1, No. 2B), 841–847 (2003).
[CrossRef]

Chu, C. H.

Chu, N. N.

Clarke, R.

Y. W. Li, V. A. Stoica, L. Endicott, G. Y. Wang, C. Uher, and R. Clarke, “Coherent optical phonon spectroscopy studies of femtosecond-laser modified Sb2Te3 films,” Appl. Phys. Lett.97(17), 171908 (2010).
[CrossRef]

Dekorsy, T.

M. Först, T. Dekorsy, C. Trappe, M. Laurenzis, H. Kurz, and B. Béchevet, “Phase change in Ge2Sb2Te5 films investigated by coherent phonon spectroscopy,” Appl. Phys. Lett.77(13), 1964–1966 (2000).
[CrossRef]

Dresselhaus, G.

H. J. Zeiger, J. Vidal, T. K. Cheng, E. P. Ippen, G. Dresselhaus, and M. S. Dresselhaus, “Theory for displacive excitation of coherent phonons,” Phys. Rev. B Condens. Matter45(2), 768–778 (1992).
[CrossRef] [PubMed]

Dresselhaus, M. S.

H. J. Zeiger, J. Vidal, T. K. Cheng, E. P. Ippen, G. Dresselhaus, and M. S. Dresselhaus, “Theory for displacive excitation of coherent phonons,” Phys. Rev. B Condens. Matter45(2), 768–778 (1992).
[CrossRef] [PubMed]

Endicott, L.

Y. W. Li, V. A. Stoica, L. Endicott, G. Y. Wang, C. Uher, and R. Clarke, “Coherent optical phonon spectroscopy studies of femtosecond-laser modified Sb2Te3 films,” Appl. Phys. Lett.97(17), 171908 (2010).
[CrossRef]

Först, M.

M. Först, T. Dekorsy, C. Trappe, M. Laurenzis, H. Kurz, and B. Béchevet, “Phase change in Ge2Sb2Te5 films investigated by coherent phonon spectroscopy,” Appl. Phys. Lett.77(13), 1964–1966 (2000).
[CrossRef]

Fujimori, S.

S. Fujimori, S. Yagi, H. Yamazaki, and N. Funakoshi, “Crystallization process of Sb-Te alloy films for optical storage,” J. Appl. Phys.64(3), 1000–1004 (1988).
[CrossRef]

Funakoshi, N.

S. Fujimori, S. Yagi, H. Yamazaki, and N. Funakoshi, “Crystallization process of Sb-Te alloy films for optical storage,” J. Appl. Phys.64(3), 1000–1004 (1988).
[CrossRef]

Garrett, G. A.

G. A. Garrett, T. F. Albrecht, J. F. Whitaker, and R. Merlin, “Coherent THz phonons driven by light pulses and the Sb problem: what is the mechanism?,” Phys. Rev. Lett.77(17), 3661–3664 (1996).
[CrossRef] [PubMed]

Gong, Y. F.

Y. G. Lu, S. N. Song, Y. F. Gong, Z. T. Song, F. Rao, L. C. Wu, B. Liu, and D. N. Yao, “Ga-Sb-Se material for low-power phase change memory,” Appl. Phys. Lett.99(24), 243111 (2011).
[CrossRef]

Hase, M.

M. Hase, Y. Miyamoto, and J. Tominaga, “Ultrafast dephasing of coherent optical phonons in atomically controlled GeTe/Sb2Te3 superlattices,” Phys. Rev. B79(17), 174112 (2009).
[CrossRef]

Hu, X.

L. P. Shi, T. C. Chong, X. Hu, and H. B. Yao, “Study of the dynamic crystallization behavior of GeSbTe phase change optical disk,” Jpn. J. Appl. Phys.42(Part 1, No. 2B), 841–847 (2003).
[CrossRef]

Ippen, E. P.

H. J. Zeiger, J. Vidal, T. K. Cheng, E. P. Ippen, G. Dresselhaus, and M. S. Dresselhaus, “Theory for displacive excitation of coherent phonons,” Phys. Rev. B Condens. Matter45(2), 768–778 (1992).
[CrossRef] [PubMed]

Ishioka, K.

K. Ishioka, M. Kitajima, and O. V. Misochko, “Coherent A1g and Eg phonons of antimony,” J. Appl. Phys.103(12), 123505 (2008).
[CrossRef]

Kang, M. J.

M. J. Kang, S. Y. Choi, D. Wamwangi, K. Wang, C. Steimer, and M. Wuttig, “Structural transformation of SbxSe100−x thin films for phase change nonvolatile memory applications,” J. Appl. Phys.98(1), 014904 (2005).
[CrossRef]

Kim, Y. H.

M. S. Youm, Y. T. Kim, Y. H. Kim, and M. Y. Sung, “Effects of excess Sb on crystallization of δ-phase SbTe binary thin films,” Phys. Status Solidi A205(7), 1636–1640 (2008).
[CrossRef]

Kim, Y. T.

M. S. Youm, Y. T. Kim, Y. H. Kim, and M. Y. Sung, “Effects of excess Sb on crystallization of δ-phase SbTe binary thin films,” Phys. Status Solidi A205(7), 1636–1640 (2008).
[CrossRef]

Kitajima, M.

K. Ishioka, M. Kitajima, and O. V. Misochko, “Coherent A1g and Eg phonons of antimony,” J. Appl. Phys.103(12), 123505 (2008).
[CrossRef]

Kuiper, A. E. T.

L. van Pieterson, M. H. R. Lankhorst, M. van Schijndel, A. E. T. Kuiper, and J. H. J. Roosen, “Phase-change recording materials with a growth-dominated crystallization mechanism: a material review,” J. Appl. Phys.97(8), 083520 (2005).
[CrossRef]

Kurz, H.

M. Först, T. Dekorsy, C. Trappe, M. Laurenzis, H. Kurz, and B. Béchevet, “Phase change in Ge2Sb2Te5 films investigated by coherent phonon spectroscopy,” Appl. Phys. Lett.77(13), 1964–1966 (2000).
[CrossRef]

Lai, T. S.

Lankhorst, M. H. R.

L. van Pieterson, M. H. R. Lankhorst, M. van Schijndel, A. E. T. Kuiper, and J. H. J. Roosen, “Phase-change recording materials with a growth-dominated crystallization mechanism: a material review,” J. Appl. Phys.97(8), 083520 (2005).
[CrossRef]

Laurenzis, M.

M. Först, T. Dekorsy, C. Trappe, M. Laurenzis, H. Kurz, and B. Béchevet, “Phase change in Ge2Sb2Te5 films investigated by coherent phonon spectroscopy,” Appl. Phys. Lett.77(13), 1964–1966 (2000).
[CrossRef]

Li, S. M.

Li, Y. W.

Y. W. Li, V. A. Stoica, L. Endicott, G. Y. Wang, C. Uher, and R. Clarke, “Coherent optical phonon spectroscopy studies of femtosecond-laser modified Sb2Te3 films,” Appl. Phys. Lett.97(17), 171908 (2010).
[CrossRef]

Lin, W. C.

Liu, A. Q.

Liu, B.

Y. G. Lu, S. N. Song, Y. F. Gong, Z. T. Song, F. Rao, L. C. Wu, B. Liu, and D. N. Yao, “Ga-Sb-Se material for low-power phase change memory,” Appl. Phys. Lett.99(24), 243111 (2011).
[CrossRef]

Lu, Y. G.

Y. G. Lu, S. N. Song, Y. F. Gong, Z. T. Song, F. Rao, L. C. Wu, B. Liu, and D. N. Yao, “Ga-Sb-Se material for low-power phase change memory,” Appl. Phys. Lett.99(24), 243111 (2011).
[CrossRef]

Mansuripur, M.

M. L. Tseng, B. H. Chen, C. H. Chu, C. M. Chang, W. C. Lin, N. N. Chu, M. Mansuripur, A. Q. Liu, and D. P. Tsai, “Fabrication of phase-change chalcogenide Ge2Sb2Te5 patterns by laser-induced forward transfer,” Opt. Express19(18), 16975–16984 (2011).
[CrossRef] [PubMed]

C. B. Peng, L. Cheng, and M. Mansuripur, “Experimental and theoretical investigations of laser-induced crystallization and amorphization in phase-change optical recording media,” J. Appl. Phys.82(9), 4183–4191 (1997).
[CrossRef]

Merlin, R.

G. A. Garrett, T. F. Albrecht, J. F. Whitaker, and R. Merlin, “Coherent THz phonons driven by light pulses and the Sb problem: what is the mechanism?,” Phys. Rev. Lett.77(17), 3661–3664 (1996).
[CrossRef] [PubMed]

Misochko, O. V.

K. Ishioka, M. Kitajima, and O. V. Misochko, “Coherent A1g and Eg phonons of antimony,” J. Appl. Phys.103(12), 123505 (2008).
[CrossRef]

Miyamoto, Y.

M. Hase, Y. Miyamoto, and J. Tominaga, “Ultrafast dephasing of coherent optical phonons in atomically controlled GeTe/Sb2Te3 superlattices,” Phys. Rev. B79(17), 174112 (2009).
[CrossRef]

Peng, C. B.

C. B. Peng, L. Cheng, and M. Mansuripur, “Experimental and theoretical investigations of laser-induced crystallization and amorphization in phase-change optical recording media,” J. Appl. Phys.82(9), 4183–4191 (1997).
[CrossRef]

Rao, F.

Y. G. Lu, S. N. Song, Y. F. Gong, Z. T. Song, F. Rao, L. C. Wu, B. Liu, and D. N. Yao, “Ga-Sb-Se material for low-power phase change memory,” Appl. Phys. Lett.99(24), 243111 (2011).
[CrossRef]

Roosen, J. H. J.

L. van Pieterson, M. H. R. Lankhorst, M. van Schijndel, A. E. T. Kuiper, and J. H. J. Roosen, “Phase-change recording materials with a growth-dominated crystallization mechanism: a material review,” J. Appl. Phys.97(8), 083520 (2005).
[CrossRef]

Shi, L. P.

L. P. Shi, T. C. Chong, X. Hu, and H. B. Yao, “Study of the dynamic crystallization behavior of GeSbTe phase change optical disk,” Jpn. J. Appl. Phys.42(Part 1, No. 2B), 841–847 (2003).
[CrossRef]

Song, S. N.

Y. G. Lu, S. N. Song, Y. F. Gong, Z. T. Song, F. Rao, L. C. Wu, B. Liu, and D. N. Yao, “Ga-Sb-Se material for low-power phase change memory,” Appl. Phys. Lett.99(24), 243111 (2011).
[CrossRef]

Song, Z. T.

Y. G. Lu, S. N. Song, Y. F. Gong, Z. T. Song, F. Rao, L. C. Wu, B. Liu, and D. N. Yao, “Ga-Sb-Se material for low-power phase change memory,” Appl. Phys. Lett.99(24), 243111 (2011).
[CrossRef]

Steimer, C.

M. J. Kang, S. Y. Choi, D. Wamwangi, K. Wang, C. Steimer, and M. Wuttig, “Structural transformation of SbxSe100−x thin films for phase change nonvolatile memory applications,” J. Appl. Phys.98(1), 014904 (2005).
[CrossRef]

Stoica, V. A.

Y. W. Li, V. A. Stoica, L. Endicott, G. Y. Wang, C. Uher, and R. Clarke, “Coherent optical phonon spectroscopy studies of femtosecond-laser modified Sb2Te3 films,” Appl. Phys. Lett.97(17), 171908 (2010).
[CrossRef]

Sun, M. C.

Sung, M. Y.

M. S. Youm, Y. T. Kim, Y. H. Kim, and M. Y. Sung, “Effects of excess Sb on crystallization of δ-phase SbTe binary thin films,” Phys. Status Solidi A205(7), 1636–1640 (2008).
[CrossRef]

Tominaga, J.

M. Hase, Y. Miyamoto, and J. Tominaga, “Ultrafast dephasing of coherent optical phonons in atomically controlled GeTe/Sb2Te3 superlattices,” Phys. Rev. B79(17), 174112 (2009).
[CrossRef]

Trappe, C.

M. Först, T. Dekorsy, C. Trappe, M. Laurenzis, H. Kurz, and B. Béchevet, “Phase change in Ge2Sb2Te5 films investigated by coherent phonon spectroscopy,” Appl. Phys. Lett.77(13), 1964–1966 (2000).
[CrossRef]

Tsai, D. P.

Tseng, M. L.

Uher, C.

Y. W. Li, V. A. Stoica, L. Endicott, G. Y. Wang, C. Uher, and R. Clarke, “Coherent optical phonon spectroscopy studies of femtosecond-laser modified Sb2Te3 films,” Appl. Phys. Lett.97(17), 171908 (2010).
[CrossRef]

van Pieterson, L.

L. van Pieterson, M. H. R. Lankhorst, M. van Schijndel, A. E. T. Kuiper, and J. H. J. Roosen, “Phase-change recording materials with a growth-dominated crystallization mechanism: a material review,” J. Appl. Phys.97(8), 083520 (2005).
[CrossRef]

van Schijndel, M.

L. van Pieterson, M. H. R. Lankhorst, M. van Schijndel, A. E. T. Kuiper, and J. H. J. Roosen, “Phase-change recording materials with a growth-dominated crystallization mechanism: a material review,” J. Appl. Phys.97(8), 083520 (2005).
[CrossRef]

Venkatasubramanian, R.

Y. G. Wang, X. F. Xu, and R. Venkatasubramanian, “Reduction in coherent phonon lifetime in Bi2Te3/Sb2Te3 superlattices,” Appl. Phys. Lett.93(11), 113114 (2008).
[CrossRef]

Vidal, J.

H. J. Zeiger, J. Vidal, T. K. Cheng, E. P. Ippen, G. Dresselhaus, and M. S. Dresselhaus, “Theory for displacive excitation of coherent phonons,” Phys. Rev. B Condens. Matter45(2), 768–778 (1992).
[CrossRef] [PubMed]

Wamwangi, D.

M. J. Kang, S. Y. Choi, D. Wamwangi, K. Wang, C. Steimer, and M. Wuttig, “Structural transformation of SbxSe100−x thin films for phase change nonvolatile memory applications,” J. Appl. Phys.98(1), 014904 (2005).
[CrossRef]

Wang, C. Z.

Wang, G. Y.

Y. W. Li, V. A. Stoica, L. Endicott, G. Y. Wang, C. Uher, and R. Clarke, “Coherent optical phonon spectroscopy studies of femtosecond-laser modified Sb2Te3 films,” Appl. Phys. Lett.97(17), 171908 (2010).
[CrossRef]

Wang, K.

M. J. Kang, S. Y. Choi, D. Wamwangi, K. Wang, C. Steimer, and M. Wuttig, “Structural transformation of SbxSe100−x thin films for phase change nonvolatile memory applications,” J. Appl. Phys.98(1), 014904 (2005).
[CrossRef]

Wang, Y. G.

Y. G. Wang, X. F. Xu, and R. Venkatasubramanian, “Reduction in coherent phonon lifetime in Bi2Te3/Sb2Te3 superlattices,” Appl. Phys. Lett.93(11), 113114 (2008).
[CrossRef]

Whitaker, J. F.

G. A. Garrett, T. F. Albrecht, J. F. Whitaker, and R. Merlin, “Coherent THz phonons driven by light pulses and the Sb problem: what is the mechanism?,” Phys. Rev. Lett.77(17), 3661–3664 (1996).
[CrossRef] [PubMed]

Wu, L. C.

Y. G. Lu, S. N. Song, Y. F. Gong, Z. T. Song, F. Rao, L. C. Wu, B. Liu, and D. N. Yao, “Ga-Sb-Se material for low-power phase change memory,” Appl. Phys. Lett.99(24), 243111 (2011).
[CrossRef]

Wuttig, M.

M. J. Kang, S. Y. Choi, D. Wamwangi, K. Wang, C. Steimer, and M. Wuttig, “Structural transformation of SbxSe100−x thin films for phase change nonvolatile memory applications,” J. Appl. Phys.98(1), 014904 (2005).
[CrossRef]

Xu, X. F.

Y. G. Wang, X. F. Xu, and R. Venkatasubramanian, “Reduction in coherent phonon lifetime in Bi2Te3/Sb2Te3 superlattices,” Appl. Phys. Lett.93(11), 113114 (2008).
[CrossRef]

Yagi, S.

S. Fujimori, S. Yagi, H. Yamazaki, and N. Funakoshi, “Crystallization process of Sb-Te alloy films for optical storage,” J. Appl. Phys.64(3), 1000–1004 (1988).
[CrossRef]

Yamazaki, H.

S. Fujimori, S. Yagi, H. Yamazaki, and N. Funakoshi, “Crystallization process of Sb-Te alloy films for optical storage,” J. Appl. Phys.64(3), 1000–1004 (1988).
[CrossRef]

Yao, D. N.

Y. G. Lu, S. N. Song, Y. F. Gong, Z. T. Song, F. Rao, L. C. Wu, B. Liu, and D. N. Yao, “Ga-Sb-Se material for low-power phase change memory,” Appl. Phys. Lett.99(24), 243111 (2011).
[CrossRef]

Yao, H. B.

L. P. Shi, T. C. Chong, X. Hu, and H. B. Yao, “Study of the dynamic crystallization behavior of GeSbTe phase change optical disk,” Jpn. J. Appl. Phys.42(Part 1, No. 2B), 841–847 (2003).
[CrossRef]

Youm, M. S.

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[CrossRef]

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[CrossRef] [PubMed]

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Opt. Express (2)

Phys. Rev. B (1)

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[CrossRef]

Phys. Rev. B Condens. Matter (1)

H. J. Zeiger, J. Vidal, T. K. Cheng, E. P. Ippen, G. Dresselhaus, and M. S. Dresselhaus, “Theory for displacive excitation of coherent phonons,” Phys. Rev. B Condens. Matter45(2), 768–778 (1992).
[CrossRef] [PubMed]

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G. A. Garrett, T. F. Albrecht, J. F. Whitaker, and R. Merlin, “Coherent THz phonons driven by light pulses and the Sb problem: what is the mechanism?,” Phys. Rev. Lett.77(17), 3661–3664 (1996).
[CrossRef] [PubMed]

Phys. Status Solidi A (1)

M. S. Youm, Y. T. Kim, Y. H. Kim, and M. Y. Sung, “Effects of excess Sb on crystallization of δ-phase SbTe binary thin films,” Phys. Status Solidi A205(7), 1636–1640 (2008).
[CrossRef]

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Figures (3)

Fig. 1
Fig. 1

(a) Transient photoreflectance changes taken on the amorphous Ga1Sb6Se3 film for different laser irradiation power but the same pump power of 15 mW. (b) Transient oscillation of COPs extracted from (a). (c) FFT spectra corresponding to (b). The bottom curves in (a, b, c) are taken from crystallized Ga1Sb6Se3 film by annealing.

Fig. 2
Fig. 2

(a) The excitation power dependence of coherent phonon dynamics of the crystallized Ga1Sb6Se3 film by laser irradiation of 120mW. The scattered filled circles denote the experimental data, while the solid lines are the best fittings to the experimental data. (b) FFT spectra corresponding to the experimental data in (a). (c) The excitation power dependence of the frequency of COP for both laser and annealing crystallization Ga1Sb6Se3 films. (d) The excitation power dependence of the lifetime of COP for both laser and annealing crystallization Ga1Sb6Se3 films.

Fig. 3
Fig. 3

(a) and (c) Laser irradiation power dependence of transient photoreflectance changes taken on the amorphous Ga3Sb4Se3 and Ga1Sb3Se6 films, respectively, under a same pump power of 15 mW during all measurements. (b) FFT spectra corresponding to oscillatory components in (a). (d) Sheet resistance vs. temperature for three samples.

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