Abstract

Spontaneous emission control has been achieved in GaAs/AlGaAs quantum well lasers by the use of Bragg reflectors to define a micro-cavity perpendicular to the quantum wells. The room temperature emission is inhibited whilst below 130K there is an enhancement. These changes to the spontaneous recombination process directly effect the threshold current producing a 25% reduction at room temperature. Theoretical modeling of the lasers is in agreement with the experimental results and highlights the effect of the micro-cavity in altering the overlap of the electro-magnetic field with the quantum well dipole oscillators.

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References

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  1. L.A. Coldren and S.W. Corzine, Diode Lasers and Photonic Integrated Circuits, (Wiley, New York, 1995).
  2. P. Blood, A.I. Kucharska, C.T. Foxon and K. Griffiths, "Temperature dependence of spontaneous emission in GaAs-AlGaAs quantum well lasers," Appl. Phys. Lett., 55, 1167-1169, (1989).
    [CrossRef]
  3. H.D. Summers, P. Mogensen, P. Rees and P. Blood, "Recombination mechanisms and optical losses in strained layer, (AlyGa1-y)xIn1-xP lasers," in Conference on Lasers and Electro-Optics, Vol. 8 of 1994 OSA Technical Digest Series (Optical Society of America, Washington, D.C., 1994) CThF4, p. 304.
  4. M.S. Uenlue and S. Strite, "Resonant cavity enhanced photonic devices," J. Appl. Phys., 78, 607-639, (1995).
    [CrossRef]
  5. F. Yang, P. Blood and J.S. Roberts, "Edge-emitting quantum well laser with Bragg reflectors," Appl. Phys. Lett., 66, 2949-2951, (1995).
    [CrossRef]
  6. R.E. Collins, Field theory of guided waves, (IEEE Press, Washington, DC, 1991).
  7. P. Rees, R.A.H. Hamilton, P. Blood and S.V. Burke, "Carrier-carrier scattering effects in InGaAs-GaAs," IEE Proc.-J: Optoelectron. 140, 81-84, (1993).
    [CrossRef]

Other (7)

L.A. Coldren and S.W. Corzine, Diode Lasers and Photonic Integrated Circuits, (Wiley, New York, 1995).

P. Blood, A.I. Kucharska, C.T. Foxon and K. Griffiths, "Temperature dependence of spontaneous emission in GaAs-AlGaAs quantum well lasers," Appl. Phys. Lett., 55, 1167-1169, (1989).
[CrossRef]

H.D. Summers, P. Mogensen, P. Rees and P. Blood, "Recombination mechanisms and optical losses in strained layer, (AlyGa1-y)xIn1-xP lasers," in Conference on Lasers and Electro-Optics, Vol. 8 of 1994 OSA Technical Digest Series (Optical Society of America, Washington, D.C., 1994) CThF4, p. 304.

M.S. Uenlue and S. Strite, "Resonant cavity enhanced photonic devices," J. Appl. Phys., 78, 607-639, (1995).
[CrossRef]

F. Yang, P. Blood and J.S. Roberts, "Edge-emitting quantum well laser with Bragg reflectors," Appl. Phys. Lett., 66, 2949-2951, (1995).
[CrossRef]

R.E. Collins, Field theory of guided waves, (IEEE Press, Washington, DC, 1991).

P. Rees, R.A.H. Hamilton, P. Blood and S.V. Burke, "Carrier-carrier scattering effects in InGaAs-GaAs," IEE Proc.-J: Optoelectron. 140, 81-84, (1993).
[CrossRef]

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Figures (3)

Fig. 1.
Fig. 1.

Spontaneous emission spectra from the micro-cavity lasers measured normal to the quantum well plane.

Fig. 2.
Fig. 2.

Measured threshold current density as a function of temperature for the micro-cavity lasers (full circles) and the control sample (open circles).

Fig. 3.
Fig. 3.

Calculated threshold current density as a function of temperature for the micro-cavity lasers (full circles) and the control sample (open circles).

Equations (1)

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R spon = k Σ [ ( M k e hh 2 Γ k ) ( N dip ) k + ( M k e lh 2 Γ k ) ( N dip ) k ]

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