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S. L. Diedenhofen, G. Vecchi, R. E. Algra, A. Hartsuiker, O. L. Muskens, G. Immink, E. P. A. M. Bakkers, W. L. Vos, and J. G. Rivas, “Broad-band and omnidirectional antireflection coatings based on semiconductor nanorods,” Adv. Mater. 21, 973–978 (2009).
[Crossref]
S. Murata, Y. Nakamura, T. Maeda, Y. Shibata, M. Ikuta, M. Sugiura, S. Nitta, M. Iwaya, S. Kamiyama, H. Amano, I. Akasaki, M. Yoshimoto, T. Furusho, and H. Kinoshita, “Dependence of dap emission properties on impurity concentrations in N-/B-co-doped 6H-SiC,” Mater. Sci. Forum 556–557, 335–338 (2007).
S. Kamiyama, T. Maeda, Y. Nakamura, M. Iwaya, H. Amano, I. Akasaki, H. Kinoshita, T. Furusho, M. Yoshimoto, T. Kimoto, J. Suda, A. Henry, I. G. Ivanov, J. P. Bergman, B. Monemar, T. Onuma, and S. F. Chichibu, “Extremely high quantum efficiency of donor-acceptor-pair emission in N-and B- doped 6H-SiC,” J. Appl. Phys. 99, 093108 (2006).
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S. L. Diedenhofen, G. Vecchi, R. E. Algra, A. Hartsuiker, O. L. Muskens, G. Immink, E. P. A. M. Bakkers, W. L. Vos, and J. G. Rivas, “Broad-band and omnidirectional antireflection coatings based on semiconductor nanorods,” Adv. Mater. 21, 973–978 (2009).
[Crossref]
K. Bergenek, C. Wiesmann, R. Wirth, L.O’Faolain, N.Linder, K.Streubel, and T. F.Krauss, “Enhanced light extraction efficiency from AlGaInP thin-film light-emitting diodes with photonic crystals,” Appl. Phys. Lett. 93, 041105 (2008).
[Crossref]
S. Kamiyama, T. Maeda, Y. Nakamura, M. Iwaya, H. Amano, I. Akasaki, H. Kinoshita, T. Furusho, M. Yoshimoto, T. Kimoto, J. Suda, A. Henry, I. G. Ivanov, J. P. Bergman, B. Monemar, T. Onuma, and S. F. Chichibu, “Extremely high quantum efficiency of donor-acceptor-pair emission in N-and B- doped 6H-SiC,” J. Appl. Phys. 99, 093108 (2006).
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[Crossref]
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M.-K. Lee, C.-L. Ho, and P.-C. Chen, “Light extraction efficiency enhancement of GaN blue LED by liquid-phase-deposited ZnO rods,” IEEE Photon. Technol. Lett. 20, 252–254 (2008).
[Crossref]
S. Kamiyama, T. Maeda, Y. Nakamura, M. Iwaya, H. Amano, I. Akasaki, H. Kinoshita, T. Furusho, M. Yoshimoto, T. Kimoto, J. Suda, A. Henry, I. G. Ivanov, J. P. Bergman, B. Monemar, T. Onuma, and S. F. Chichibu, “Extremely high quantum efficiency of donor-acceptor-pair emission in N-and B- doped 6H-SiC,” J. Appl. Phys. 99, 093108 (2006).
[Crossref]
K. Kim, J. Choi, J. B. Park, S. C. Jeon, J. S. Kim, and H. M. Lee, “Lattice constant effect of photonic crystals on the light output of blue light-emitting diodes,” IEEE Photon. Technol. Lett. 20, 1455–1457 (2008).
[Crossref]
H.-Y. Lee, Y.-H. Chou, C.-T. Lee, W.-Y. Yeh, and M.-T. Chu, “Mechanisms of lighting enhancement of Al nanoclusters-embedded Al-doped ZnO film in GaN-based light-emitting diodes,” J. Appl. Phys. 107, 014503 (2010).
[Crossref]
H.-Y. Lee, Y.-H. Chou, C.-T. Lee, W.-Y. Yeh, and M.-T. Chu, “Mechanisms of lighting enhancement of Al nanoclusters-embedded Al-doped ZnO film in GaN-based light-emitting diodes,” J. Appl. Phys. 107, 014503 (2010).
[Crossref]
K. McGroddy, A. David, E. Matioli, M. Iza, S. Nakamura, S. DenBaars, J. S. Speck, C. Weisbuch, and E. L. Hu, “Directional emission control and increased light extraction in GaN photonic crystal light emitting diodes,” Appl. Phys. Lett. 93, 103502 (2008).
[Crossref]
K. McGroddy, A. David, E. Matioli, M. Iza, S. Nakamura, S. DenBaars, J. S. Speck, C. Weisbuch, and E. L. Hu, “Directional emission control and increased light extraction in GaN photonic crystal light emitting diodes,” Appl. Phys. Lett. 93, 103502 (2008).
[Crossref]
T. Fujii, Y. Gao, R. Sharma, E. L. Hu, S. P. DenBaars, and S. Nakamura, “Increase in the extraction efficiency of GaN-based light-emitting diodes via surface roughening,” Appl. Phys. Lett. 84, 855–857 (2004).
[Crossref]
S. L. Diedenhofen, G. Vecchi, R. E. Algra, A. Hartsuiker, O. L. Muskens, G. Immink, E. P. A. M. Bakkers, W. L. Vos, and J. G. Rivas, “Broad-band and omnidirectional antireflection coatings based on semiconductor nanorods,” Adv. Mater. 21, 973–978 (2009).
[Crossref]
S. Fan, P. R. Villeneuve, and J. D. Joannopoulos, “High extraction efficiency of spontaneous emission from slabs of photonic crystals,” Phys. Rev. Lett. 78, 3294–3297 (1997).
[Crossref]
T. Fujii, Y. Gao, R. Sharma, E. L. Hu, S. P. DenBaars, and S. Nakamura, “Increase in the extraction efficiency of GaN-based light-emitting diodes via surface roughening,” Appl. Phys. Lett. 84, 855–857 (2004).
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S. Murata, Y. Nakamura, T. Maeda, Y. Shibata, M. Ikuta, M. Sugiura, S. Nitta, M. Iwaya, S. Kamiyama, H. Amano, I. Akasaki, M. Yoshimoto, T. Furusho, and H. Kinoshita, “Dependence of dap emission properties on impurity concentrations in N-/B-co-doped 6H-SiC,” Mater. Sci. Forum 556–557, 335–338 (2007).
S. Kamiyama, T. Maeda, Y. Nakamura, M. Iwaya, H. Amano, I. Akasaki, H. Kinoshita, T. Furusho, M. Yoshimoto, T. Kimoto, J. Suda, A. Henry, I. G. Ivanov, J. P. Bergman, B. Monemar, T. Onuma, and S. F. Chichibu, “Extremely high quantum efficiency of donor-acceptor-pair emission in N-and B- doped 6H-SiC,” J. Appl. Phys. 99, 093108 (2006).
[Crossref]
X. Li, J. Gao, L. Xue, and Y. Han, “Porous polymer films with gradient-refractive-index structure for broadband and omnidirectional antireflection coatings,” Adv. Funct. Mater. 20, 259–265 (2010).
[Crossref]
T. Fujii, Y. Gao, R. Sharma, E. L. Hu, S. P. DenBaars, and S. Nakamura, “Increase in the extraction efficiency of GaN-based light-emitting diodes via surface roughening,” Appl. Phys. Lett. 84, 855–857 (2004).
[Crossref]
X. Li, J. Gao, L. Xue, and Y. Han, “Porous polymer films with gradient-refractive-index structure for broadband and omnidirectional antireflection coatings,” Adv. Funct. Mater. 20, 259–265 (2010).
[Crossref]
S. L. Diedenhofen, G. Vecchi, R. E. Algra, A. Hartsuiker, O. L. Muskens, G. Immink, E. P. A. M. Bakkers, W. L. Vos, and J. G. Rivas, “Broad-band and omnidirectional antireflection coatings based on semiconductor nanorods,” Adv. Mater. 21, 973–978 (2009).
[Crossref]
S. Kamiyama, T. Maeda, Y. Nakamura, M. Iwaya, H. Amano, I. Akasaki, H. Kinoshita, T. Furusho, M. Yoshimoto, T. Kimoto, J. Suda, A. Henry, I. G. Ivanov, J. P. Bergman, B. Monemar, T. Onuma, and S. F. Chichibu, “Extremely high quantum efficiency of donor-acceptor-pair emission in N-and B- doped 6H-SiC,” J. Appl. Phys. 99, 093108 (2006).
[Crossref]
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M.-K. Lee, C.-L. Ho, and P.-C. Chen, “Light extraction efficiency enhancement of GaN blue LED by liquid-phase-deposited ZnO rods,” IEEE Photon. Technol. Lett. 20, 252–254 (2008).
[Crossref]
K. McGroddy, A. David, E. Matioli, M. Iza, S. Nakamura, S. DenBaars, J. S. Speck, C. Weisbuch, and E. L. Hu, “Directional emission control and increased light extraction in GaN photonic crystal light emitting diodes,” Appl. Phys. Lett. 93, 103502 (2008).
[Crossref]
T. Fujii, Y. Gao, R. Sharma, E. L. Hu, S. P. DenBaars, and S. Nakamura, “Increase in the extraction efficiency of GaN-based light-emitting diodes via surface roughening,” Appl. Phys. Lett. 84, 855–857 (2004).
[Crossref]
S. Murata, Y. Nakamura, T. Maeda, Y. Shibata, M. Ikuta, M. Sugiura, S. Nitta, M. Iwaya, S. Kamiyama, H. Amano, I. Akasaki, M. Yoshimoto, T. Furusho, and H. Kinoshita, “Dependence of dap emission properties on impurity concentrations in N-/B-co-doped 6H-SiC,” Mater. Sci. Forum 556–557, 335–338 (2007).
S. L. Diedenhofen, G. Vecchi, R. E. Algra, A. Hartsuiker, O. L. Muskens, G. Immink, E. P. A. M. Bakkers, W. L. Vos, and J. G. Rivas, “Broad-band and omnidirectional antireflection coatings based on semiconductor nanorods,” Adv. Mater. 21, 973–978 (2009).
[Crossref]
S. Kamiyama, T. Maeda, Y. Nakamura, M. Iwaya, H. Amano, I. Akasaki, H. Kinoshita, T. Furusho, M. Yoshimoto, T. Kimoto, J. Suda, A. Henry, I. G. Ivanov, J. P. Bergman, B. Monemar, T. Onuma, and S. F. Chichibu, “Extremely high quantum efficiency of donor-acceptor-pair emission in N-and B- doped 6H-SiC,” J. Appl. Phys. 99, 093108 (2006).
[Crossref]
S. Murata, Y. Nakamura, T. Maeda, Y. Shibata, M. Ikuta, M. Sugiura, S. Nitta, M. Iwaya, S. Kamiyama, H. Amano, I. Akasaki, M. Yoshimoto, T. Furusho, and H. Kinoshita, “Dependence of dap emission properties on impurity concentrations in N-/B-co-doped 6H-SiC,” Mater. Sci. Forum 556–557, 335–338 (2007).
S. Kamiyama, T. Maeda, Y. Nakamura, M. Iwaya, H. Amano, I. Akasaki, H. Kinoshita, T. Furusho, M. Yoshimoto, T. Kimoto, J. Suda, A. Henry, I. G. Ivanov, J. P. Bergman, B. Monemar, T. Onuma, and S. F. Chichibu, “Extremely high quantum efficiency of donor-acceptor-pair emission in N-and B- doped 6H-SiC,” J. Appl. Phys. 99, 093108 (2006).
[Crossref]
K. McGroddy, A. David, E. Matioli, M. Iza, S. Nakamura, S. DenBaars, J. S. Speck, C. Weisbuch, and E. L. Hu, “Directional emission control and increased light extraction in GaN photonic crystal light emitting diodes,” Appl. Phys. Lett. 93, 103502 (2008).
[Crossref]
K. Kim, J. Choi, J. B. Park, S. C. Jeon, J. S. Kim, and H. M. Lee, “Lattice constant effect of photonic crystals on the light output of blue light-emitting diodes,” IEEE Photon. Technol. Lett. 20, 1455–1457 (2008).
[Crossref]
C.-H. Sun, P. Jiang, and B. Jiang, “Broadband moth-eye antireflection coatings on silicon,” Appl. Phys. Lett. 92, 061112 (2008).
[Crossref]
C.-H. Sun, P. Jiang, and B. Jiang, “Broadband moth-eye antireflection coatings on silicon,” Appl. Phys. Lett. 92, 061112 (2008).
[Crossref]
S. Fan, P. R. Villeneuve, and J. D. Joannopoulos, “High extraction efficiency of spontaneous emission from slabs of photonic crystals,” Phys. Rev. Lett. 78, 3294–3297 (1997).
[Crossref]
K. Bergenek, C. Wiesmann, R. Wirth, L.O’Faolain, N.Linder, K.Streubel, and T. F.Krauss, “Enhanced light extraction efficiency from AlGaInP thin-film light-emitting diodes with photonic crystals,” Appl. Phys. Lett. 93, 041105 (2008).
[Crossref]
S. Murata, Y. Nakamura, T. Maeda, Y. Shibata, M. Ikuta, M. Sugiura, S. Nitta, M. Iwaya, S. Kamiyama, H. Amano, I. Akasaki, M. Yoshimoto, T. Furusho, and H. Kinoshita, “Dependence of dap emission properties on impurity concentrations in N-/B-co-doped 6H-SiC,” Mater. Sci. Forum 556–557, 335–338 (2007).
S. Kamiyama, T. Maeda, Y. Nakamura, M. Iwaya, H. Amano, I. Akasaki, H. Kinoshita, T. Furusho, M. Yoshimoto, T. Kimoto, J. Suda, A. Henry, I. G. Ivanov, J. P. Bergman, B. Monemar, T. Onuma, and S. F. Chichibu, “Extremely high quantum efficiency of donor-acceptor-pair emission in N-and B- doped 6H-SiC,” J. Appl. Phys. 99, 093108 (2006).
[Crossref]
K.-K. Kim, S. D. Lee, H. Kim, J.-C. Park, S.-N. Lee, Y. Park, S.-J. Park, and S.-W. Kim, “Enhanced light extraction efficiency of GaN-based light-emitting diodes with ZnO nanorod arrays grown using aqueous solution,” Appl. Phys. Lett. 94, 071118 (2009).
[Crossref]
J.-Q. Xi, M. F. Schubert, J. K. Kim, E. F. Schubert, M. Chen, S.-Y. Lin, W. Liu, and J. A. Smart, “Optical thin-film materials with low refractive index for broadband elimination of fresnel reflection,” Nat. Photonics 1, 176–179 (2007).
K. Kim, J. Choi, J. B. Park, S. C. Jeon, J. S. Kim, and H. M. Lee, “Lattice constant effect of photonic crystals on the light output of blue light-emitting diodes,” IEEE Photon. Technol. Lett. 20, 1455–1457 (2008).
[Crossref]
K. Kim, J. Choi, J. B. Park, S. C. Jeon, J. S. Kim, and H. M. Lee, “Lattice constant effect of photonic crystals on the light output of blue light-emitting diodes,” IEEE Photon. Technol. Lett. 20, 1455–1457 (2008).
[Crossref]
K.-K. Kim, S. D. Lee, H. Kim, J.-C. Park, S.-N. Lee, Y. Park, S.-J. Park, and S.-W. Kim, “Enhanced light extraction efficiency of GaN-based light-emitting diodes with ZnO nanorod arrays grown using aqueous solution,” Appl. Phys. Lett. 94, 071118 (2009).
[Crossref]
K.-K. Kim, S. D. Lee, H. Kim, J.-C. Park, S.-N. Lee, Y. Park, S.-J. Park, and S.-W. Kim, “Enhanced light extraction efficiency of GaN-based light-emitting diodes with ZnO nanorod arrays grown using aqueous solution,” Appl. Phys. Lett. 94, 071118 (2009).
[Crossref]
S. Kamiyama, T. Maeda, Y. Nakamura, M. Iwaya, H. Amano, I. Akasaki, H. Kinoshita, T. Furusho, M. Yoshimoto, T. Kimoto, J. Suda, A. Henry, I. G. Ivanov, J. P. Bergman, B. Monemar, T. Onuma, and S. F. Chichibu, “Extremely high quantum efficiency of donor-acceptor-pair emission in N-and B- doped 6H-SiC,” J. Appl. Phys. 99, 093108 (2006).
[Crossref]
S. Murata, Y. Nakamura, T. Maeda, Y. Shibata, M. Ikuta, M. Sugiura, S. Nitta, M. Iwaya, S. Kamiyama, H. Amano, I. Akasaki, M. Yoshimoto, T. Furusho, and H. Kinoshita, “Dependence of dap emission properties on impurity concentrations in N-/B-co-doped 6H-SiC,” Mater. Sci. Forum 556–557, 335–338 (2007).
S. Kamiyama, T. Maeda, Y. Nakamura, M. Iwaya, H. Amano, I. Akasaki, H. Kinoshita, T. Furusho, M. Yoshimoto, T. Kimoto, J. Suda, A. Henry, I. G. Ivanov, J. P. Bergman, B. Monemar, T. Onuma, and S. F. Chichibu, “Extremely high quantum efficiency of donor-acceptor-pair emission in N-and B- doped 6H-SiC,” J. Appl. Phys. 99, 093108 (2006).
[Crossref]
K. Bergenek, C. Wiesmann, R. Wirth, L.O’Faolain, N.Linder, K.Streubel, and T. F.Krauss, “Enhanced light extraction efficiency from AlGaInP thin-film light-emitting diodes with photonic crystals,” Appl. Phys. Lett. 93, 041105 (2008).
[Crossref]
K. Bergenek, C. Wiesmann, R. Wirth, L.O’Faolain, N.Linder, K.Streubel, and T. F.Krauss, “Enhanced light extraction efficiency from AlGaInP thin-film light-emitting diodes with photonic crystals,” Appl. Phys. Lett. 93, 041105 (2008).
[Crossref]
H.-Y. Lee, Y.-H. Chou, C.-T. Lee, W.-Y. Yeh, and M.-T. Chu, “Mechanisms of lighting enhancement of Al nanoclusters-embedded Al-doped ZnO film in GaN-based light-emitting diodes,” J. Appl. Phys. 107, 014503 (2010).
[Crossref]
K. Kim, J. Choi, J. B. Park, S. C. Jeon, J. S. Kim, and H. M. Lee, “Lattice constant effect of photonic crystals on the light output of blue light-emitting diodes,” IEEE Photon. Technol. Lett. 20, 1455–1457 (2008).
[Crossref]
H.-Y. Lee, Y.-H. Chou, C.-T. Lee, W.-Y. Yeh, and M.-T. Chu, “Mechanisms of lighting enhancement of Al nanoclusters-embedded Al-doped ZnO film in GaN-based light-emitting diodes,” J. Appl. Phys. 107, 014503 (2010).
[Crossref]
M.-K. Lee, C.-L. Ho, and P.-C. Chen, “Light extraction efficiency enhancement of GaN blue LED by liquid-phase-deposited ZnO rods,” IEEE Photon. Technol. Lett. 20, 252–254 (2008).
[Crossref]
K.-K. Kim, S. D. Lee, H. Kim, J.-C. Park, S.-N. Lee, Y. Park, S.-J. Park, and S.-W. Kim, “Enhanced light extraction efficiency of GaN-based light-emitting diodes with ZnO nanorod arrays grown using aqueous solution,” Appl. Phys. Lett. 94, 071118 (2009).
[Crossref]
K.-K. Kim, S. D. Lee, H. Kim, J.-C. Park, S.-N. Lee, Y. Park, S.-J. Park, and S.-W. Kim, “Enhanced light extraction efficiency of GaN-based light-emitting diodes with ZnO nanorod arrays grown using aqueous solution,” Appl. Phys. Lett. 94, 071118 (2009).
[Crossref]
X. Li, J. Gao, L. Xue, and Y. Han, “Porous polymer films with gradient-refractive-index structure for broadband and omnidirectional antireflection coatings,” Adv. Funct. Mater. 20, 259–265 (2010).
[Crossref]
J.-Q. Xi, M. F. Schubert, J. K. Kim, E. F. Schubert, M. Chen, S.-Y. Lin, W. Liu, and J. A. Smart, “Optical thin-film materials with low refractive index for broadband elimination of fresnel reflection,” Nat. Photonics 1, 176–179 (2007).
K. Bergenek, C. Wiesmann, R. Wirth, L.O’Faolain, N.Linder, K.Streubel, and T. F.Krauss, “Enhanced light extraction efficiency from AlGaInP thin-film light-emitting diodes with photonic crystals,” Appl. Phys. Lett. 93, 041105 (2008).
[Crossref]
J.-Q. Xi, M. F. Schubert, J. K. Kim, E. F. Schubert, M. Chen, S.-Y. Lin, W. Liu, and J. A. Smart, “Optical thin-film materials with low refractive index for broadband elimination of fresnel reflection,” Nat. Photonics 1, 176–179 (2007).
S. Murata, Y. Nakamura, T. Maeda, Y. Shibata, M. Ikuta, M. Sugiura, S. Nitta, M. Iwaya, S. Kamiyama, H. Amano, I. Akasaki, M. Yoshimoto, T. Furusho, and H. Kinoshita, “Dependence of dap emission properties on impurity concentrations in N-/B-co-doped 6H-SiC,” Mater. Sci. Forum 556–557, 335–338 (2007).
S. Kamiyama, T. Maeda, Y. Nakamura, M. Iwaya, H. Amano, I. Akasaki, H. Kinoshita, T. Furusho, M. Yoshimoto, T. Kimoto, J. Suda, A. Henry, I. G. Ivanov, J. P. Bergman, B. Monemar, T. Onuma, and S. F. Chichibu, “Extremely high quantum efficiency of donor-acceptor-pair emission in N-and B- doped 6H-SiC,” J. Appl. Phys. 99, 093108 (2006).
[Crossref]
K. McGroddy, A. David, E. Matioli, M. Iza, S. Nakamura, S. DenBaars, J. S. Speck, C. Weisbuch, and E. L. Hu, “Directional emission control and increased light extraction in GaN photonic crystal light emitting diodes,” Appl. Phys. Lett. 93, 103502 (2008).
[Crossref]
K. McGroddy, A. David, E. Matioli, M. Iza, S. Nakamura, S. DenBaars, J. S. Speck, C. Weisbuch, and E. L. Hu, “Directional emission control and increased light extraction in GaN photonic crystal light emitting diodes,” Appl. Phys. Lett. 93, 103502 (2008).
[Crossref]
S. Kamiyama, T. Maeda, Y. Nakamura, M. Iwaya, H. Amano, I. Akasaki, H. Kinoshita, T. Furusho, M. Yoshimoto, T. Kimoto, J. Suda, A. Henry, I. G. Ivanov, J. P. Bergman, B. Monemar, T. Onuma, and S. F. Chichibu, “Extremely high quantum efficiency of donor-acceptor-pair emission in N-and B- doped 6H-SiC,” J. Appl. Phys. 99, 093108 (2006).
[Crossref]
S. Murata, Y. Nakamura, T. Maeda, Y. Shibata, M. Ikuta, M. Sugiura, S. Nitta, M. Iwaya, S. Kamiyama, H. Amano, I. Akasaki, M. Yoshimoto, T. Furusho, and H. Kinoshita, “Dependence of dap emission properties on impurity concentrations in N-/B-co-doped 6H-SiC,” Mater. Sci. Forum 556–557, 335–338 (2007).
S. L. Diedenhofen, G. Vecchi, R. E. Algra, A. Hartsuiker, O. L. Muskens, G. Immink, E. P. A. M. Bakkers, W. L. Vos, and J. G. Rivas, “Broad-band and omnidirectional antireflection coatings based on semiconductor nanorods,” Adv. Mater. 21, 973–978 (2009).
[Crossref]
K. Bergenek, C. Wiesmann, R. Wirth, L.O’Faolain, N.Linder, K.Streubel, and T. F.Krauss, “Enhanced light extraction efficiency from AlGaInP thin-film light-emitting diodes with photonic crystals,” Appl. Phys. Lett. 93, 041105 (2008).
[Crossref]
K. McGroddy, A. David, E. Matioli, M. Iza, S. Nakamura, S. DenBaars, J. S. Speck, C. Weisbuch, and E. L. Hu, “Directional emission control and increased light extraction in GaN photonic crystal light emitting diodes,” Appl. Phys. Lett. 93, 103502 (2008).
[Crossref]
T. Fujii, Y. Gao, R. Sharma, E. L. Hu, S. P. DenBaars, and S. Nakamura, “Increase in the extraction efficiency of GaN-based light-emitting diodes via surface roughening,” Appl. Phys. Lett. 84, 855–857 (2004).
[Crossref]
S. Murata, Y. Nakamura, T. Maeda, Y. Shibata, M. Ikuta, M. Sugiura, S. Nitta, M. Iwaya, S. Kamiyama, H. Amano, I. Akasaki, M. Yoshimoto, T. Furusho, and H. Kinoshita, “Dependence of dap emission properties on impurity concentrations in N-/B-co-doped 6H-SiC,” Mater. Sci. Forum 556–557, 335–338 (2007).
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