Abstract

We introduce an innovative technique for the deposition of fluorine doped oxide (F:Al2O3) films by DC pulse magnetron sputtering from aluminum targets at room temperature. There was almost no change in transmittance even after the film was exposed to air for two weeks. Its refractive index was around 1.69 and the extinction coefficient was smaller than 1.9 × 10−4 at 193 nm. An AlF3/F:Al2O3 antireflection coating was deposited on both sides of a quartz substrate. A high transmittance of 99.32% was attained at the 193 nm wavelength. The cross-sectional morphology showed that the surface of the multilayer films was smooth and there were no columnar or porous structures.

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References

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  1. U. Stamm, R. Paetzel, I. Bragin, J. Kleinschmidt, D. Basting, and F. Voss, “Recent developments in industrial excimer laser technology,” Proc. SPIE 3092, 485–492 (1997).
    [Crossref]
  2. A. Duparre´, R. Thielsch, N. Kaiser, S. Jakobs, K. Mann, and E. Eva, “Surface finish and optical quality of CaF2 for UV lithography applications,” Proc. SPIE 3334, 1048–1054 (1998).
    [Crossref]
  3. Z. Shi, V. Kochergin, and F. Wang, “193nm Superlens imaging structure for 20nm lithography node,” Opt. Express 17(14), 11309–11314 (2009).
    [Crossref] [PubMed]
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    [Crossref] [PubMed]
  5. M. Yang, A. Gatto, and N. Kaiser, “Highly reflecting aluminum-protected optical coatings for the vacuum-ultraviolet spectral range,” Appl. Opt. 45(1), 178–183 (2006).
    [Crossref] [PubMed]
  6. A. Gatto, M. Yang, N. Kaiser, J. Heber, J. U. Schmidt, T. Sandner, H. Schenk, and H. Lakner, “High-performance coatings for micromechanical mirrors,” Appl. Opt. 45(7), 1602–1607 (2006).
    [Crossref] [PubMed]
  7. M.-C. Liu, C.-C. Lee, B.-H. Liao, M. Kaneko, K. Nakahira, and Y. Takano, “Fluoride antireflection coatings deposited at 193 nm,” Appl. Opt. 47(13), C214–C218 (2008).
    [Crossref] [PubMed]
  8. T. Yoshida, K. Nishimoto, K. Sekine, and K. Etoh, “Fluoride antireflection coatings for deep ultraviolet optics deposited by ion-beam sputtering,” Appl. Opt. 45(7), 1375–1379 (2006).
    [Crossref] [PubMed]
  9. Y. Taki, “Film structure and optical constants of magnetron-sputtered fluoride films for deep ultraviolet lithography,” Vacuum 74(3-4), 431–435 (2004).
    [Crossref]
  10. C.-C. Lee, B.-H. Liao, and M.-C. Liu, “Developing new manufacturing methods for the improvement of AlF3 thin films,” Opt. Express 16(10), 6904–6909 (2008).
    [Crossref] [PubMed]
  11. B.-H. Liao, C.-C. Lee, C.-C. Jaing, and M.-C. Liu, “Optical and mechanical properties of AlF3 films produced by pulse magnetron sputtering of Al targets with CF4/O2 gas,” Opt. Rev. 16(4), 505–510 (2009).
    [Crossref]
  12. M. J. Kushner, “A kinetic study of plasma-etching process. I. A model for the etching of Si and SiO2 in CnFm/H2 and CnFm/O2 plasmas,” J. Appl. Phys. 53(4), 2923–2938 (1982).
    [Crossref]

2009 (2)

Z. Shi, V. Kochergin, and F. Wang, “193nm Superlens imaging structure for 20nm lithography node,” Opt. Express 17(14), 11309–11314 (2009).
[Crossref] [PubMed]

B.-H. Liao, C.-C. Lee, C.-C. Jaing, and M.-C. Liu, “Optical and mechanical properties of AlF3 films produced by pulse magnetron sputtering of Al targets with CF4/O2 gas,” Opt. Rev. 16(4), 505–510 (2009).
[Crossref]

2008 (2)

2006 (3)

2004 (1)

Y. Taki, “Film structure and optical constants of magnetron-sputtered fluoride films for deep ultraviolet lithography,” Vacuum 74(3-4), 431–435 (2004).
[Crossref]

1998 (1)

A. Duparre´, R. Thielsch, N. Kaiser, S. Jakobs, K. Mann, and E. Eva, “Surface finish and optical quality of CaF2 for UV lithography applications,” Proc. SPIE 3334, 1048–1054 (1998).
[Crossref]

1997 (1)

U. Stamm, R. Paetzel, I. Bragin, J. Kleinschmidt, D. Basting, and F. Voss, “Recent developments in industrial excimer laser technology,” Proc. SPIE 3092, 485–492 (1997).
[Crossref]

1992 (1)

J. J. Cullen, P. J. Neale, and M. P. Lesser, “Biological weighting function for the inhibition of phytoplankton photosynthesis by ultraviolet radiation,” Science 258(5082), 646–650 (1992).
[Crossref] [PubMed]

1982 (1)

M. J. Kushner, “A kinetic study of plasma-etching process. I. A model for the etching of Si and SiO2 in CnFm/H2 and CnFm/O2 plasmas,” J. Appl. Phys. 53(4), 2923–2938 (1982).
[Crossref]

Basting, D.

U. Stamm, R. Paetzel, I. Bragin, J. Kleinschmidt, D. Basting, and F. Voss, “Recent developments in industrial excimer laser technology,” Proc. SPIE 3092, 485–492 (1997).
[Crossref]

Bragin, I.

U. Stamm, R. Paetzel, I. Bragin, J. Kleinschmidt, D. Basting, and F. Voss, “Recent developments in industrial excimer laser technology,” Proc. SPIE 3092, 485–492 (1997).
[Crossref]

Cullen, J. J.

J. J. Cullen, P. J. Neale, and M. P. Lesser, “Biological weighting function for the inhibition of phytoplankton photosynthesis by ultraviolet radiation,” Science 258(5082), 646–650 (1992).
[Crossref] [PubMed]

Duparre´, A.

A. Duparre´, R. Thielsch, N. Kaiser, S. Jakobs, K. Mann, and E. Eva, “Surface finish and optical quality of CaF2 for UV lithography applications,” Proc. SPIE 3334, 1048–1054 (1998).
[Crossref]

Etoh, K.

Eva, E.

A. Duparre´, R. Thielsch, N. Kaiser, S. Jakobs, K. Mann, and E. Eva, “Surface finish and optical quality of CaF2 for UV lithography applications,” Proc. SPIE 3334, 1048–1054 (1998).
[Crossref]

Gatto, A.

Heber, J.

Jaing, C.-C.

B.-H. Liao, C.-C. Lee, C.-C. Jaing, and M.-C. Liu, “Optical and mechanical properties of AlF3 films produced by pulse magnetron sputtering of Al targets with CF4/O2 gas,” Opt. Rev. 16(4), 505–510 (2009).
[Crossref]

Jakobs, S.

A. Duparre´, R. Thielsch, N. Kaiser, S. Jakobs, K. Mann, and E. Eva, “Surface finish and optical quality of CaF2 for UV lithography applications,” Proc. SPIE 3334, 1048–1054 (1998).
[Crossref]

Kaiser, N.

Kaneko, M.

Kleinschmidt, J.

U. Stamm, R. Paetzel, I. Bragin, J. Kleinschmidt, D. Basting, and F. Voss, “Recent developments in industrial excimer laser technology,” Proc. SPIE 3092, 485–492 (1997).
[Crossref]

Kochergin, V.

Kushner, M. J.

M. J. Kushner, “A kinetic study of plasma-etching process. I. A model for the etching of Si and SiO2 in CnFm/H2 and CnFm/O2 plasmas,” J. Appl. Phys. 53(4), 2923–2938 (1982).
[Crossref]

Lakner, H.

Lee, C.-C.

Lesser, M. P.

J. J. Cullen, P. J. Neale, and M. P. Lesser, “Biological weighting function for the inhibition of phytoplankton photosynthesis by ultraviolet radiation,” Science 258(5082), 646–650 (1992).
[Crossref] [PubMed]

Liao, B.-H.

Liu, M.-C.

Mann, K.

A. Duparre´, R. Thielsch, N. Kaiser, S. Jakobs, K. Mann, and E. Eva, “Surface finish and optical quality of CaF2 for UV lithography applications,” Proc. SPIE 3334, 1048–1054 (1998).
[Crossref]

Nakahira, K.

Neale, P. J.

J. J. Cullen, P. J. Neale, and M. P. Lesser, “Biological weighting function for the inhibition of phytoplankton photosynthesis by ultraviolet radiation,” Science 258(5082), 646–650 (1992).
[Crossref] [PubMed]

Nishimoto, K.

Paetzel, R.

U. Stamm, R. Paetzel, I. Bragin, J. Kleinschmidt, D. Basting, and F. Voss, “Recent developments in industrial excimer laser technology,” Proc. SPIE 3092, 485–492 (1997).
[Crossref]

Sandner, T.

Schenk, H.

Schmidt, J. U.

Sekine, K.

Shi, Z.

Stamm, U.

U. Stamm, R. Paetzel, I. Bragin, J. Kleinschmidt, D. Basting, and F. Voss, “Recent developments in industrial excimer laser technology,” Proc. SPIE 3092, 485–492 (1997).
[Crossref]

Takano, Y.

Taki, Y.

Y. Taki, “Film structure and optical constants of magnetron-sputtered fluoride films for deep ultraviolet lithography,” Vacuum 74(3-4), 431–435 (2004).
[Crossref]

Thielsch, R.

A. Duparre´, R. Thielsch, N. Kaiser, S. Jakobs, K. Mann, and E. Eva, “Surface finish and optical quality of CaF2 for UV lithography applications,” Proc. SPIE 3334, 1048–1054 (1998).
[Crossref]

Voss, F.

U. Stamm, R. Paetzel, I. Bragin, J. Kleinschmidt, D. Basting, and F. Voss, “Recent developments in industrial excimer laser technology,” Proc. SPIE 3092, 485–492 (1997).
[Crossref]

Wang, F.

Yang, M.

Yoshida, T.

Appl. Opt. (4)

J. Appl. Phys. (1)

M. J. Kushner, “A kinetic study of plasma-etching process. I. A model for the etching of Si and SiO2 in CnFm/H2 and CnFm/O2 plasmas,” J. Appl. Phys. 53(4), 2923–2938 (1982).
[Crossref]

Opt. Express (2)

Opt. Rev. (1)

B.-H. Liao, C.-C. Lee, C.-C. Jaing, and M.-C. Liu, “Optical and mechanical properties of AlF3 films produced by pulse magnetron sputtering of Al targets with CF4/O2 gas,” Opt. Rev. 16(4), 505–510 (2009).
[Crossref]

Proc. SPIE (2)

U. Stamm, R. Paetzel, I. Bragin, J. Kleinschmidt, D. Basting, and F. Voss, “Recent developments in industrial excimer laser technology,” Proc. SPIE 3092, 485–492 (1997).
[Crossref]

A. Duparre´, R. Thielsch, N. Kaiser, S. Jakobs, K. Mann, and E. Eva, “Surface finish and optical quality of CaF2 for UV lithography applications,” Proc. SPIE 3334, 1048–1054 (1998).
[Crossref]

Science (1)

J. J. Cullen, P. J. Neale, and M. P. Lesser, “Biological weighting function for the inhibition of phytoplankton photosynthesis by ultraviolet radiation,” Science 258(5082), 646–650 (1992).
[Crossref] [PubMed]

Vacuum (1)

Y. Taki, “Film structure and optical constants of magnetron-sputtered fluoride films for deep ultraviolet lithography,” Vacuum 74(3-4), 431–435 (2004).
[Crossref]

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Figures (8)

Fig. 1
Fig. 1

Schematic diagram of new deposition process.

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Fig. 2
Fig. 2

Transmittance spectra of fluorine doped Al2O3 thin films prepared with different ratios of CF4/O2 gas.

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Fig. 3
Fig. 3

Aging effect of F:Al2O3 films prepared with a CF4/O2 ratio of 0.243.

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Fig. 4
Fig. 4

Transmittance spectra of AlF3 thin films prepared with low usage amounts of CF4 gas.

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Fig. 5
Fig. 5

Refractive index and extinction coefficient of F:Al2O3 films for better CF4/O2 gas ratios.

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Fig. 6
Fig. 6

Refractive index of AlF3 films.

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Fig. 7
Fig. 7

Total thickness, as indicated by SEM, and transmittance spectrum of AlF3/F:Al2O3 AR coating.

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Fig. 8
Fig. 8

Cross-sectional morphology of the AR coating.

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Equations (6)

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C F 4 + e − → C F 3 + + F + 2 e −
O + C F 3 → C O F 2 + F
O + C F 2 → C O + 2 F
O + C F 2 → C O F + F
O + C O F → C O 2 + F
O + C → C O

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