H.-H. Huang, S.-Y. Chu, P.-C. Kao, Y.-C. Chen, M.-R. Yang, and Z.-L. Tseng, “Enhancement of hole-injection and power efficiency of organic light emitting devices using an ultra-thin ZnO buffer layer,” J. Alloy. Comp. 479(1–2), 520–524 (2009).
[Crossref]
D.-D. Zhang, J. Feng, Y.-F. Liu, Y.-Q. Zhong, Y. Bai, Y. Jin, G.-H. Xie, Q. Xue, Y. Zhao, S.-Y. Liu, and H.-B. Sun, “Enhanced hole injection in organic light-emitting devices by using Fe[sub 3]O[sub 4] as an anodic buffer layer,” Appl. Phys. Lett. 94(22), 223306 (2009).
[Crossref]
S. Zhan, X. Ying-Ge, L. Xia, and Y. Tao, “A novel hole-blocking layer NaF between the α-naphthylphenyliphenyl diamine and ITO,” Appl. Surf. Sci. 253(9), 4374–4376 (2007).
[Crossref]
Z. Z. You, “Combined AFM, XPS, and contact angle studies on treated indium-tin-oxide films for organic light-emitting devices,” Mater. Lett. 61(18), 3809–3814 (2007).
[Crossref]
H. You, Y. Dai, Z. Zhang, and D. Ma, “Improved performances of organic light-emitting diodes with metal oxide as anode buffer,” J. Appl. Phys. 101(2), 026105 (2007).
[Crossref]
H.-H. Huang, S.-Y. Chu, P.-C. Kao, Y.-C. Chen, and R.-C. Chang, “Improved hole-injection and power efficiency of organic light-emitting diodes using an ultrathin Li-doped ZnO buffer layer,” J. Electrochem. Soc. 154(3), J105–J108 (2007).
[Crossref]
K. Okumoto, H. Kanno, Y. Hamada, H. Takahashi, and K. Shibata, “High efficiency red organic light-emitting devices using tetraphenyldibenzoperiflanthene-doped rubrene as an emitting layer,” Appl. Phys. Lett. 89(1), 013502–013503 (2006).
[Crossref]
S. T. Zhang, Z. J. Wang, J. M. Zhao, Y. Q. Zhan, Y. Wu, Y. C. Zhou, X. M. Ding, and X. Y. Hou, “Electron blocking and hole injection: the role of N, N'-bis(naphthalen-1-y)-N, N'-bis(phenyl)benzidine in organic light-emitting devices,” Appl. Phys. Lett. 84(15), 2916–2918 (2004).
[Crossref]
C. H. Yi, C. H. Jeong, Y. H. Lee, Y. W. Ko, and G. Y. Yeom, “Oxide surface cleaning by an atmospheric pressure plasma,” Surf. Coat. Tech. 177–178, 711–715 (2004).
[Crossref]
H. Y. Yu, X. D. Feng, D. Grozea, Z. H. Lu, R. N. S. Sodhi, A. M. Hor, and H. Aziz, “Surface electronic structure of plasma-treated indium tin oxides,” Appl. Phys. Lett. 78(17), 2595–2597 (2001).
[Crossref]
M. G. Mason, L. S. Hung, C. W. Tang, S. T. Lee, K. W. Wong, and M. Wang, “Characterization of treated indium–tin–oxide surfaces used in electroluminescent devices,” J. Appl. Phys. 86(3), 1688–1692 (1999).
[Crossref]
S. T. Lee, Z. Q. Gao, and L. S. Hung, “Metal diffusion from electrodes in organic light-emitting diodes,” Appl. Phys. Lett. 75(10), 1404–1406 (1999).
[Crossref]
J. S. Kim, P. K. H. Ho, D. S. Thomas, R. H. Friend, F. Cacialli, G. W. Bao, and S. F. Y. Li, “X-ray photoelectron spectroscopy of surface-treated indium-tin oxide thin films,” Chem. Phys. Lett. 315(5–6), 307–312 (1999).
[Crossref]
J. S. Kim, R. H. Friend, and F. Cacialli, “Surface energy and polarity of treated indium–tin–oxide anodes for polymer light-emitting diodes studied by contact-angle measurements,” J. Appl. Phys. 86(5), 2774–2778 (1999).
[Crossref]
S. K. So, W. K. Choi, C. H. Cheng, L. M. Leung, and C. F. Kwong, “Surface preparation and characterization of indium tin oxide substrates for organic electroluminescent devices,” Appl. Phys., A Mater. Sci. Process. 68(4), 447–450 (1999).
[Crossref]
F. Li, H. Tang, J. Shinar, O. Resto, and S. Z. Weisz, “Effects of aquaregia treatment of indium–tin–oxide substrates on the behavior of double layered organic light-emitting diodes,” Appl. Phys. Lett. 70(20), 2741–2743 (1997).
[Crossref]
L. S. Hung, C. W. Tang, and M. G. Mason, “Enhanced electron injection in organic electroluminescence devices using an Al/LiF electrode,” Appl. Phys. Lett. 70(2), 152–154 (1997).
[Crossref]
S. A. Van Slyke, C. H. Chen, and C. W. Tang, “Organic electroluminescent devices with improved stability,” Appl. Phys. Lett. 69(15), 2160–2162 (1996).
[Crossref]
C. W. Tang, S. A. VanSlyke, and C. H. Chen, “Electroluminescence of doped organic thin films,” J. Appl. Phys. 65(9), 3610–3616 (1989).
[Crossref]
C. W. Tang and S. A. VanSlyke, “Organic electroluminescent diodes,” Appl. Phys. Lett. 51(12), 913–915 (1987).
[Crossref]
H. Y. Yu, X. D. Feng, D. Grozea, Z. H. Lu, R. N. S. Sodhi, A. M. Hor, and H. Aziz, “Surface electronic structure of plasma-treated indium tin oxides,” Appl. Phys. Lett. 78(17), 2595–2597 (2001).
[Crossref]
D.-D. Zhang, J. Feng, Y.-F. Liu, Y.-Q. Zhong, Y. Bai, Y. Jin, G.-H. Xie, Q. Xue, Y. Zhao, S.-Y. Liu, and H.-B. Sun, “Enhanced hole injection in organic light-emitting devices by using Fe[sub 3]O[sub 4] as an anodic buffer layer,” Appl. Phys. Lett. 94(22), 223306 (2009).
[Crossref]
J. S. Kim, P. K. H. Ho, D. S. Thomas, R. H. Friend, F. Cacialli, G. W. Bao, and S. F. Y. Li, “X-ray photoelectron spectroscopy of surface-treated indium-tin oxide thin films,” Chem. Phys. Lett. 315(5–6), 307–312 (1999).
[Crossref]
J. S. Kim, P. K. H. Ho, D. S. Thomas, R. H. Friend, F. Cacialli, G. W. Bao, and S. F. Y. Li, “X-ray photoelectron spectroscopy of surface-treated indium-tin oxide thin films,” Chem. Phys. Lett. 315(5–6), 307–312 (1999).
[Crossref]
J. S. Kim, R. H. Friend, and F. Cacialli, “Surface energy and polarity of treated indium–tin–oxide anodes for polymer light-emitting diodes studied by contact-angle measurements,” J. Appl. Phys. 86(5), 2774–2778 (1999).
[Crossref]
H.-H. Huang, S.-Y. Chu, P.-C. Kao, Y.-C. Chen, and R.-C. Chang, “Improved hole-injection and power efficiency of organic light-emitting diodes using an ultrathin Li-doped ZnO buffer layer,” J. Electrochem. Soc. 154(3), J105–J108 (2007).
[Crossref]
S. A. Van Slyke, C. H. Chen, and C. W. Tang, “Organic electroluminescent devices with improved stability,” Appl. Phys. Lett. 69(15), 2160–2162 (1996).
[Crossref]
C. W. Tang, S. A. VanSlyke, and C. H. Chen, “Electroluminescence of doped organic thin films,” J. Appl. Phys. 65(9), 3610–3616 (1989).
[Crossref]
H.-H. Huang, S.-Y. Chu, P.-C. Kao, Y.-C. Chen, M.-R. Yang, and Z.-L. Tseng, “Enhancement of hole-injection and power efficiency of organic light emitting devices using an ultra-thin ZnO buffer layer,” J. Alloy. Comp. 479(1–2), 520–524 (2009).
[Crossref]
H.-H. Huang, S.-Y. Chu, P.-C. Kao, Y.-C. Chen, and R.-C. Chang, “Improved hole-injection and power efficiency of organic light-emitting diodes using an ultrathin Li-doped ZnO buffer layer,” J. Electrochem. Soc. 154(3), J105–J108 (2007).
[Crossref]
S. K. So, W. K. Choi, C. H. Cheng, L. M. Leung, and C. F. Kwong, “Surface preparation and characterization of indium tin oxide substrates for organic electroluminescent devices,” Appl. Phys., A Mater. Sci. Process. 68(4), 447–450 (1999).
[Crossref]
S. K. So, W. K. Choi, C. H. Cheng, L. M. Leung, and C. F. Kwong, “Surface preparation and characterization of indium tin oxide substrates for organic electroluminescent devices,” Appl. Phys., A Mater. Sci. Process. 68(4), 447–450 (1999).
[Crossref]
H.-H. Huang, S.-Y. Chu, P.-C. Kao, Y.-C. Chen, M.-R. Yang, and Z.-L. Tseng, “Enhancement of hole-injection and power efficiency of organic light emitting devices using an ultra-thin ZnO buffer layer,” J. Alloy. Comp. 479(1–2), 520–524 (2009).
[Crossref]
H.-H. Huang, S.-Y. Chu, P.-C. Kao, Y.-C. Chen, and R.-C. Chang, “Improved hole-injection and power efficiency of organic light-emitting diodes using an ultrathin Li-doped ZnO buffer layer,” J. Electrochem. Soc. 154(3), J105–J108 (2007).
[Crossref]
H. You, Y. Dai, Z. Zhang, and D. Ma, “Improved performances of organic light-emitting diodes with metal oxide as anode buffer,” J. Appl. Phys. 101(2), 026105 (2007).
[Crossref]
S. T. Zhang, Z. J. Wang, J. M. Zhao, Y. Q. Zhan, Y. Wu, Y. C. Zhou, X. M. Ding, and X. Y. Hou, “Electron blocking and hole injection: the role of N, N'-bis(naphthalen-1-y)-N, N'-bis(phenyl)benzidine in organic light-emitting devices,” Appl. Phys. Lett. 84(15), 2916–2918 (2004).
[Crossref]
D.-D. Zhang, J. Feng, Y.-F. Liu, Y.-Q. Zhong, Y. Bai, Y. Jin, G.-H. Xie, Q. Xue, Y. Zhao, S.-Y. Liu, and H.-B. Sun, “Enhanced hole injection in organic light-emitting devices by using Fe[sub 3]O[sub 4] as an anodic buffer layer,” Appl. Phys. Lett. 94(22), 223306 (2009).
[Crossref]
H. Y. Yu, X. D. Feng, D. Grozea, Z. H. Lu, R. N. S. Sodhi, A. M. Hor, and H. Aziz, “Surface electronic structure of plasma-treated indium tin oxides,” Appl. Phys. Lett. 78(17), 2595–2597 (2001).
[Crossref]
J. S. Kim, R. H. Friend, and F. Cacialli, “Surface energy and polarity of treated indium–tin–oxide anodes for polymer light-emitting diodes studied by contact-angle measurements,” J. Appl. Phys. 86(5), 2774–2778 (1999).
[Crossref]
J. S. Kim, P. K. H. Ho, D. S. Thomas, R. H. Friend, F. Cacialli, G. W. Bao, and S. F. Y. Li, “X-ray photoelectron spectroscopy of surface-treated indium-tin oxide thin films,” Chem. Phys. Lett. 315(5–6), 307–312 (1999).
[Crossref]
S. T. Lee, Z. Q. Gao, and L. S. Hung, “Metal diffusion from electrodes in organic light-emitting diodes,” Appl. Phys. Lett. 75(10), 1404–1406 (1999).
[Crossref]
H. Y. Yu, X. D. Feng, D. Grozea, Z. H. Lu, R. N. S. Sodhi, A. M. Hor, and H. Aziz, “Surface electronic structure of plasma-treated indium tin oxides,” Appl. Phys. Lett. 78(17), 2595–2597 (2001).
[Crossref]
K. Okumoto, H. Kanno, Y. Hamada, H. Takahashi, and K. Shibata, “High efficiency red organic light-emitting devices using tetraphenyldibenzoperiflanthene-doped rubrene as an emitting layer,” Appl. Phys. Lett. 89(1), 013502–013503 (2006).
[Crossref]
J. S. Kim, P. K. H. Ho, D. S. Thomas, R. H. Friend, F. Cacialli, G. W. Bao, and S. F. Y. Li, “X-ray photoelectron spectroscopy of surface-treated indium-tin oxide thin films,” Chem. Phys. Lett. 315(5–6), 307–312 (1999).
[Crossref]
H. Y. Yu, X. D. Feng, D. Grozea, Z. H. Lu, R. N. S. Sodhi, A. M. Hor, and H. Aziz, “Surface electronic structure of plasma-treated indium tin oxides,” Appl. Phys. Lett. 78(17), 2595–2597 (2001).
[Crossref]
S. T. Zhang, Z. J. Wang, J. M. Zhao, Y. Q. Zhan, Y. Wu, Y. C. Zhou, X. M. Ding, and X. Y. Hou, “Electron blocking and hole injection: the role of N, N'-bis(naphthalen-1-y)-N, N'-bis(phenyl)benzidine in organic light-emitting devices,” Appl. Phys. Lett. 84(15), 2916–2918 (2004).
[Crossref]
H.-H. Huang, S.-Y. Chu, P.-C. Kao, Y.-C. Chen, M.-R. Yang, and Z.-L. Tseng, “Enhancement of hole-injection and power efficiency of organic light emitting devices using an ultra-thin ZnO buffer layer,” J. Alloy. Comp. 479(1–2), 520–524 (2009).
[Crossref]
H.-H. Huang, S.-Y. Chu, P.-C. Kao, Y.-C. Chen, and R.-C. Chang, “Improved hole-injection and power efficiency of organic light-emitting diodes using an ultrathin Li-doped ZnO buffer layer,” J. Electrochem. Soc. 154(3), J105–J108 (2007).
[Crossref]
S. T. Lee, Z. Q. Gao, and L. S. Hung, “Metal diffusion from electrodes in organic light-emitting diodes,” Appl. Phys. Lett. 75(10), 1404–1406 (1999).
[Crossref]
M. G. Mason, L. S. Hung, C. W. Tang, S. T. Lee, K. W. Wong, and M. Wang, “Characterization of treated indium–tin–oxide surfaces used in electroluminescent devices,” J. Appl. Phys. 86(3), 1688–1692 (1999).
[Crossref]
L. S. Hung, C. W. Tang, and M. G. Mason, “Enhanced electron injection in organic electroluminescence devices using an Al/LiF electrode,” Appl. Phys. Lett. 70(2), 152–154 (1997).
[Crossref]
C. H. Yi, C. H. Jeong, Y. H. Lee, Y. W. Ko, and G. Y. Yeom, “Oxide surface cleaning by an atmospheric pressure plasma,” Surf. Coat. Tech. 177–178, 711–715 (2004).
[Crossref]
D.-D. Zhang, J. Feng, Y.-F. Liu, Y.-Q. Zhong, Y. Bai, Y. Jin, G.-H. Xie, Q. Xue, Y. Zhao, S.-Y. Liu, and H.-B. Sun, “Enhanced hole injection in organic light-emitting devices by using Fe[sub 3]O[sub 4] as an anodic buffer layer,” Appl. Phys. Lett. 94(22), 223306 (2009).
[Crossref]
K. Okumoto, H. Kanno, Y. Hamada, H. Takahashi, and K. Shibata, “High efficiency red organic light-emitting devices using tetraphenyldibenzoperiflanthene-doped rubrene as an emitting layer,” Appl. Phys. Lett. 89(1), 013502–013503 (2006).
[Crossref]
H.-H. Huang, S.-Y. Chu, P.-C. Kao, Y.-C. Chen, M.-R. Yang, and Z.-L. Tseng, “Enhancement of hole-injection and power efficiency of organic light emitting devices using an ultra-thin ZnO buffer layer,” J. Alloy. Comp. 479(1–2), 520–524 (2009).
[Crossref]
H.-H. Huang, S.-Y. Chu, P.-C. Kao, Y.-C. Chen, and R.-C. Chang, “Improved hole-injection and power efficiency of organic light-emitting diodes using an ultrathin Li-doped ZnO buffer layer,” J. Electrochem. Soc. 154(3), J105–J108 (2007).
[Crossref]
J. S. Kim, P. K. H. Ho, D. S. Thomas, R. H. Friend, F. Cacialli, G. W. Bao, and S. F. Y. Li, “X-ray photoelectron spectroscopy of surface-treated indium-tin oxide thin films,” Chem. Phys. Lett. 315(5–6), 307–312 (1999).
[Crossref]
J. S. Kim, R. H. Friend, and F. Cacialli, “Surface energy and polarity of treated indium–tin–oxide anodes for polymer light-emitting diodes studied by contact-angle measurements,” J. Appl. Phys. 86(5), 2774–2778 (1999).
[Crossref]
C. H. Yi, C. H. Jeong, Y. H. Lee, Y. W. Ko, and G. Y. Yeom, “Oxide surface cleaning by an atmospheric pressure plasma,” Surf. Coat. Tech. 177–178, 711–715 (2004).
[Crossref]
S. K. So, W. K. Choi, C. H. Cheng, L. M. Leung, and C. F. Kwong, “Surface preparation and characterization of indium tin oxide substrates for organic electroluminescent devices,” Appl. Phys., A Mater. Sci. Process. 68(4), 447–450 (1999).
[Crossref]
S. T. Lee, Z. Q. Gao, and L. S. Hung, “Metal diffusion from electrodes in organic light-emitting diodes,” Appl. Phys. Lett. 75(10), 1404–1406 (1999).
[Crossref]
M. G. Mason, L. S. Hung, C. W. Tang, S. T. Lee, K. W. Wong, and M. Wang, “Characterization of treated indium–tin–oxide surfaces used in electroluminescent devices,” J. Appl. Phys. 86(3), 1688–1692 (1999).
[Crossref]
C. H. Yi, C. H. Jeong, Y. H. Lee, Y. W. Ko, and G. Y. Yeom, “Oxide surface cleaning by an atmospheric pressure plasma,” Surf. Coat. Tech. 177–178, 711–715 (2004).
[Crossref]
S. K. So, W. K. Choi, C. H. Cheng, L. M. Leung, and C. F. Kwong, “Surface preparation and characterization of indium tin oxide substrates for organic electroluminescent devices,” Appl. Phys., A Mater. Sci. Process. 68(4), 447–450 (1999).
[Crossref]
F. Li, H. Tang, J. Shinar, O. Resto, and S. Z. Weisz, “Effects of aquaregia treatment of indium–tin–oxide substrates on the behavior of double layered organic light-emitting diodes,” Appl. Phys. Lett. 70(20), 2741–2743 (1997).
[Crossref]
J. S. Kim, P. K. H. Ho, D. S. Thomas, R. H. Friend, F. Cacialli, G. W. Bao, and S. F. Y. Li, “X-ray photoelectron spectroscopy of surface-treated indium-tin oxide thin films,” Chem. Phys. Lett. 315(5–6), 307–312 (1999).
[Crossref]
D.-D. Zhang, J. Feng, Y.-F. Liu, Y.-Q. Zhong, Y. Bai, Y. Jin, G.-H. Xie, Q. Xue, Y. Zhao, S.-Y. Liu, and H.-B. Sun, “Enhanced hole injection in organic light-emitting devices by using Fe[sub 3]O[sub 4] as an anodic buffer layer,” Appl. Phys. Lett. 94(22), 223306 (2009).
[Crossref]
D.-D. Zhang, J. Feng, Y.-F. Liu, Y.-Q. Zhong, Y. Bai, Y. Jin, G.-H. Xie, Q. Xue, Y. Zhao, S.-Y. Liu, and H.-B. Sun, “Enhanced hole injection in organic light-emitting devices by using Fe[sub 3]O[sub 4] as an anodic buffer layer,” Appl. Phys. Lett. 94(22), 223306 (2009).
[Crossref]
H. Y. Yu, X. D. Feng, D. Grozea, Z. H. Lu, R. N. S. Sodhi, A. M. Hor, and H. Aziz, “Surface electronic structure of plasma-treated indium tin oxides,” Appl. Phys. Lett. 78(17), 2595–2597 (2001).
[Crossref]
H. You, Y. Dai, Z. Zhang, and D. Ma, “Improved performances of organic light-emitting diodes with metal oxide as anode buffer,” J. Appl. Phys. 101(2), 026105 (2007).
[Crossref]
M. G. Mason, L. S. Hung, C. W. Tang, S. T. Lee, K. W. Wong, and M. Wang, “Characterization of treated indium–tin–oxide surfaces used in electroluminescent devices,” J. Appl. Phys. 86(3), 1688–1692 (1999).
[Crossref]
L. S. Hung, C. W. Tang, and M. G. Mason, “Enhanced electron injection in organic electroluminescence devices using an Al/LiF electrode,” Appl. Phys. Lett. 70(2), 152–154 (1997).
[Crossref]
K. Okumoto, H. Kanno, Y. Hamada, H. Takahashi, and K. Shibata, “High efficiency red organic light-emitting devices using tetraphenyldibenzoperiflanthene-doped rubrene as an emitting layer,” Appl. Phys. Lett. 89(1), 013502–013503 (2006).
[Crossref]
F. Li, H. Tang, J. Shinar, O. Resto, and S. Z. Weisz, “Effects of aquaregia treatment of indium–tin–oxide substrates on the behavior of double layered organic light-emitting diodes,” Appl. Phys. Lett. 70(20), 2741–2743 (1997).
[Crossref]
K. Okumoto, H. Kanno, Y. Hamada, H. Takahashi, and K. Shibata, “High efficiency red organic light-emitting devices using tetraphenyldibenzoperiflanthene-doped rubrene as an emitting layer,” Appl. Phys. Lett. 89(1), 013502–013503 (2006).
[Crossref]
F. Li, H. Tang, J. Shinar, O. Resto, and S. Z. Weisz, “Effects of aquaregia treatment of indium–tin–oxide substrates on the behavior of double layered organic light-emitting diodes,” Appl. Phys. Lett. 70(20), 2741–2743 (1997).
[Crossref]
S. K. So, W. K. Choi, C. H. Cheng, L. M. Leung, and C. F. Kwong, “Surface preparation and characterization of indium tin oxide substrates for organic electroluminescent devices,” Appl. Phys., A Mater. Sci. Process. 68(4), 447–450 (1999).
[Crossref]
H. Y. Yu, X. D. Feng, D. Grozea, Z. H. Lu, R. N. S. Sodhi, A. M. Hor, and H. Aziz, “Surface electronic structure of plasma-treated indium tin oxides,” Appl. Phys. Lett. 78(17), 2595–2597 (2001).
[Crossref]
D.-D. Zhang, J. Feng, Y.-F. Liu, Y.-Q. Zhong, Y. Bai, Y. Jin, G.-H. Xie, Q. Xue, Y. Zhao, S.-Y. Liu, and H.-B. Sun, “Enhanced hole injection in organic light-emitting devices by using Fe[sub 3]O[sub 4] as an anodic buffer layer,” Appl. Phys. Lett. 94(22), 223306 (2009).
[Crossref]
K. Okumoto, H. Kanno, Y. Hamada, H. Takahashi, and K. Shibata, “High efficiency red organic light-emitting devices using tetraphenyldibenzoperiflanthene-doped rubrene as an emitting layer,” Appl. Phys. Lett. 89(1), 013502–013503 (2006).
[Crossref]
M. G. Mason, L. S. Hung, C. W. Tang, S. T. Lee, K. W. Wong, and M. Wang, “Characterization of treated indium–tin–oxide surfaces used in electroluminescent devices,” J. Appl. Phys. 86(3), 1688–1692 (1999).
[Crossref]
L. S. Hung, C. W. Tang, and M. G. Mason, “Enhanced electron injection in organic electroluminescence devices using an Al/LiF electrode,” Appl. Phys. Lett. 70(2), 152–154 (1997).
[Crossref]
S. A. Van Slyke, C. H. Chen, and C. W. Tang, “Organic electroluminescent devices with improved stability,” Appl. Phys. Lett. 69(15), 2160–2162 (1996).
[Crossref]
C. W. Tang, S. A. VanSlyke, and C. H. Chen, “Electroluminescence of doped organic thin films,” J. Appl. Phys. 65(9), 3610–3616 (1989).
[Crossref]
C. W. Tang and S. A. VanSlyke, “Organic electroluminescent diodes,” Appl. Phys. Lett. 51(12), 913–915 (1987).
[Crossref]
F. Li, H. Tang, J. Shinar, O. Resto, and S. Z. Weisz, “Effects of aquaregia treatment of indium–tin–oxide substrates on the behavior of double layered organic light-emitting diodes,” Appl. Phys. Lett. 70(20), 2741–2743 (1997).
[Crossref]
S. Zhan, X. Ying-Ge, L. Xia, and Y. Tao, “A novel hole-blocking layer NaF between the α-naphthylphenyliphenyl diamine and ITO,” Appl. Surf. Sci. 253(9), 4374–4376 (2007).
[Crossref]
J. S. Kim, P. K. H. Ho, D. S. Thomas, R. H. Friend, F. Cacialli, G. W. Bao, and S. F. Y. Li, “X-ray photoelectron spectroscopy of surface-treated indium-tin oxide thin films,” Chem. Phys. Lett. 315(5–6), 307–312 (1999).
[Crossref]
H.-H. Huang, S.-Y. Chu, P.-C. Kao, Y.-C. Chen, M.-R. Yang, and Z.-L. Tseng, “Enhancement of hole-injection and power efficiency of organic light emitting devices using an ultra-thin ZnO buffer layer,” J. Alloy. Comp. 479(1–2), 520–524 (2009).
[Crossref]
S. A. Van Slyke, C. H. Chen, and C. W. Tang, “Organic electroluminescent devices with improved stability,” Appl. Phys. Lett. 69(15), 2160–2162 (1996).
[Crossref]
C. W. Tang, S. A. VanSlyke, and C. H. Chen, “Electroluminescence of doped organic thin films,” J. Appl. Phys. 65(9), 3610–3616 (1989).
[Crossref]
C. W. Tang and S. A. VanSlyke, “Organic electroluminescent diodes,” Appl. Phys. Lett. 51(12), 913–915 (1987).
[Crossref]
M. G. Mason, L. S. Hung, C. W. Tang, S. T. Lee, K. W. Wong, and M. Wang, “Characterization of treated indium–tin–oxide surfaces used in electroluminescent devices,” J. Appl. Phys. 86(3), 1688–1692 (1999).
[Crossref]
S. T. Zhang, Z. J. Wang, J. M. Zhao, Y. Q. Zhan, Y. Wu, Y. C. Zhou, X. M. Ding, and X. Y. Hou, “Electron blocking and hole injection: the role of N, N'-bis(naphthalen-1-y)-N, N'-bis(phenyl)benzidine in organic light-emitting devices,” Appl. Phys. Lett. 84(15), 2916–2918 (2004).
[Crossref]
F. Li, H. Tang, J. Shinar, O. Resto, and S. Z. Weisz, “Effects of aquaregia treatment of indium–tin–oxide substrates on the behavior of double layered organic light-emitting diodes,” Appl. Phys. Lett. 70(20), 2741–2743 (1997).
[Crossref]
M. G. Mason, L. S. Hung, C. W. Tang, S. T. Lee, K. W. Wong, and M. Wang, “Characterization of treated indium–tin–oxide surfaces used in electroluminescent devices,” J. Appl. Phys. 86(3), 1688–1692 (1999).
[Crossref]
S. T. Zhang, Z. J. Wang, J. M. Zhao, Y. Q. Zhan, Y. Wu, Y. C. Zhou, X. M. Ding, and X. Y. Hou, “Electron blocking and hole injection: the role of N, N'-bis(naphthalen-1-y)-N, N'-bis(phenyl)benzidine in organic light-emitting devices,” Appl. Phys. Lett. 84(15), 2916–2918 (2004).
[Crossref]
S. Zhan, X. Ying-Ge, L. Xia, and Y. Tao, “A novel hole-blocking layer NaF between the α-naphthylphenyliphenyl diamine and ITO,” Appl. Surf. Sci. 253(9), 4374–4376 (2007).
[Crossref]
D.-D. Zhang, J. Feng, Y.-F. Liu, Y.-Q. Zhong, Y. Bai, Y. Jin, G.-H. Xie, Q. Xue, Y. Zhao, S.-Y. Liu, and H.-B. Sun, “Enhanced hole injection in organic light-emitting devices by using Fe[sub 3]O[sub 4] as an anodic buffer layer,” Appl. Phys. Lett. 94(22), 223306 (2009).
[Crossref]
D.-D. Zhang, J. Feng, Y.-F. Liu, Y.-Q. Zhong, Y. Bai, Y. Jin, G.-H. Xie, Q. Xue, Y. Zhao, S.-Y. Liu, and H.-B. Sun, “Enhanced hole injection in organic light-emitting devices by using Fe[sub 3]O[sub 4] as an anodic buffer layer,” Appl. Phys. Lett. 94(22), 223306 (2009).
[Crossref]
H.-H. Huang, S.-Y. Chu, P.-C. Kao, Y.-C. Chen, M.-R. Yang, and Z.-L. Tseng, “Enhancement of hole-injection and power efficiency of organic light emitting devices using an ultra-thin ZnO buffer layer,” J. Alloy. Comp. 479(1–2), 520–524 (2009).
[Crossref]
C. H. Yi, C. H. Jeong, Y. H. Lee, Y. W. Ko, and G. Y. Yeom, “Oxide surface cleaning by an atmospheric pressure plasma,” Surf. Coat. Tech. 177–178, 711–715 (2004).
[Crossref]
C. H. Yi, C. H. Jeong, Y. H. Lee, Y. W. Ko, and G. Y. Yeom, “Oxide surface cleaning by an atmospheric pressure plasma,” Surf. Coat. Tech. 177–178, 711–715 (2004).
[Crossref]
S. Zhan, X. Ying-Ge, L. Xia, and Y. Tao, “A novel hole-blocking layer NaF between the α-naphthylphenyliphenyl diamine and ITO,” Appl. Surf. Sci. 253(9), 4374–4376 (2007).
[Crossref]
H. You, Y. Dai, Z. Zhang, and D. Ma, “Improved performances of organic light-emitting diodes with metal oxide as anode buffer,” J. Appl. Phys. 101(2), 026105 (2007).
[Crossref]
Z. Z. You, “Combined AFM, XPS, and contact angle studies on treated indium-tin-oxide films for organic light-emitting devices,” Mater. Lett. 61(18), 3809–3814 (2007).
[Crossref]
H. Y. Yu, X. D. Feng, D. Grozea, Z. H. Lu, R. N. S. Sodhi, A. M. Hor, and H. Aziz, “Surface electronic structure of plasma-treated indium tin oxides,” Appl. Phys. Lett. 78(17), 2595–2597 (2001).
[Crossref]
S. Zhan, X. Ying-Ge, L. Xia, and Y. Tao, “A novel hole-blocking layer NaF between the α-naphthylphenyliphenyl diamine and ITO,” Appl. Surf. Sci. 253(9), 4374–4376 (2007).
[Crossref]
S. T. Zhang, Z. J. Wang, J. M. Zhao, Y. Q. Zhan, Y. Wu, Y. C. Zhou, X. M. Ding, and X. Y. Hou, “Electron blocking and hole injection: the role of N, N'-bis(naphthalen-1-y)-N, N'-bis(phenyl)benzidine in organic light-emitting devices,” Appl. Phys. Lett. 84(15), 2916–2918 (2004).
[Crossref]
D.-D. Zhang, J. Feng, Y.-F. Liu, Y.-Q. Zhong, Y. Bai, Y. Jin, G.-H. Xie, Q. Xue, Y. Zhao, S.-Y. Liu, and H.-B. Sun, “Enhanced hole injection in organic light-emitting devices by using Fe[sub 3]O[sub 4] as an anodic buffer layer,” Appl. Phys. Lett. 94(22), 223306 (2009).
[Crossref]
S. T. Zhang, Z. J. Wang, J. M. Zhao, Y. Q. Zhan, Y. Wu, Y. C. Zhou, X. M. Ding, and X. Y. Hou, “Electron blocking and hole injection: the role of N, N'-bis(naphthalen-1-y)-N, N'-bis(phenyl)benzidine in organic light-emitting devices,” Appl. Phys. Lett. 84(15), 2916–2918 (2004).
[Crossref]
H. You, Y. Dai, Z. Zhang, and D. Ma, “Improved performances of organic light-emitting diodes with metal oxide as anode buffer,” J. Appl. Phys. 101(2), 026105 (2007).
[Crossref]
S. T. Zhang, Z. J. Wang, J. M. Zhao, Y. Q. Zhan, Y. Wu, Y. C. Zhou, X. M. Ding, and X. Y. Hou, “Electron blocking and hole injection: the role of N, N'-bis(naphthalen-1-y)-N, N'-bis(phenyl)benzidine in organic light-emitting devices,” Appl. Phys. Lett. 84(15), 2916–2918 (2004).
[Crossref]
D.-D. Zhang, J. Feng, Y.-F. Liu, Y.-Q. Zhong, Y. Bai, Y. Jin, G.-H. Xie, Q. Xue, Y. Zhao, S.-Y. Liu, and H.-B. Sun, “Enhanced hole injection in organic light-emitting devices by using Fe[sub 3]O[sub 4] as an anodic buffer layer,” Appl. Phys. Lett. 94(22), 223306 (2009).
[Crossref]
D.-D. Zhang, J. Feng, Y.-F. Liu, Y.-Q. Zhong, Y. Bai, Y. Jin, G.-H. Xie, Q. Xue, Y. Zhao, S.-Y. Liu, and H.-B. Sun, “Enhanced hole injection in organic light-emitting devices by using Fe[sub 3]O[sub 4] as an anodic buffer layer,” Appl. Phys. Lett. 94(22), 223306 (2009).
[Crossref]
S. T. Zhang, Z. J. Wang, J. M. Zhao, Y. Q. Zhan, Y. Wu, Y. C. Zhou, X. M. Ding, and X. Y. Hou, “Electron blocking and hole injection: the role of N, N'-bis(naphthalen-1-y)-N, N'-bis(phenyl)benzidine in organic light-emitting devices,” Appl. Phys. Lett. 84(15), 2916–2918 (2004).
[Crossref]
C. W. Tang and S. A. VanSlyke, “Organic electroluminescent diodes,” Appl. Phys. Lett. 51(12), 913–915 (1987).
[Crossref]
S. A. Van Slyke, C. H. Chen, and C. W. Tang, “Organic electroluminescent devices with improved stability,” Appl. Phys. Lett. 69(15), 2160–2162 (1996).
[Crossref]
L. S. Hung, C. W. Tang, and M. G. Mason, “Enhanced electron injection in organic electroluminescence devices using an Al/LiF electrode,” Appl. Phys. Lett. 70(2), 152–154 (1997).
[Crossref]
S. T. Lee, Z. Q. Gao, and L. S. Hung, “Metal diffusion from electrodes in organic light-emitting diodes,” Appl. Phys. Lett. 75(10), 1404–1406 (1999).
[Crossref]
F. Li, H. Tang, J. Shinar, O. Resto, and S. Z. Weisz, “Effects of aquaregia treatment of indium–tin–oxide substrates on the behavior of double layered organic light-emitting diodes,” Appl. Phys. Lett. 70(20), 2741–2743 (1997).
[Crossref]
H. Y. Yu, X. D. Feng, D. Grozea, Z. H. Lu, R. N. S. Sodhi, A. M. Hor, and H. Aziz, “Surface electronic structure of plasma-treated indium tin oxides,” Appl. Phys. Lett. 78(17), 2595–2597 (2001).
[Crossref]
D.-D. Zhang, J. Feng, Y.-F. Liu, Y.-Q. Zhong, Y. Bai, Y. Jin, G.-H. Xie, Q. Xue, Y. Zhao, S.-Y. Liu, and H.-B. Sun, “Enhanced hole injection in organic light-emitting devices by using Fe[sub 3]O[sub 4] as an anodic buffer layer,” Appl. Phys. Lett. 94(22), 223306 (2009).
[Crossref]
K. Okumoto, H. Kanno, Y. Hamada, H. Takahashi, and K. Shibata, “High efficiency red organic light-emitting devices using tetraphenyldibenzoperiflanthene-doped rubrene as an emitting layer,” Appl. Phys. Lett. 89(1), 013502–013503 (2006).
[Crossref]
S. T. Zhang, Z. J. Wang, J. M. Zhao, Y. Q. Zhan, Y. Wu, Y. C. Zhou, X. M. Ding, and X. Y. Hou, “Electron blocking and hole injection: the role of N, N'-bis(naphthalen-1-y)-N, N'-bis(phenyl)benzidine in organic light-emitting devices,” Appl. Phys. Lett. 84(15), 2916–2918 (2004).
[Crossref]
S. K. So, W. K. Choi, C. H. Cheng, L. M. Leung, and C. F. Kwong, “Surface preparation and characterization of indium tin oxide substrates for organic electroluminescent devices,” Appl. Phys., A Mater. Sci. Process. 68(4), 447–450 (1999).
[Crossref]
S. Zhan, X. Ying-Ge, L. Xia, and Y. Tao, “A novel hole-blocking layer NaF between the α-naphthylphenyliphenyl diamine and ITO,” Appl. Surf. Sci. 253(9), 4374–4376 (2007).
[Crossref]
J. S. Kim, P. K. H. Ho, D. S. Thomas, R. H. Friend, F. Cacialli, G. W. Bao, and S. F. Y. Li, “X-ray photoelectron spectroscopy of surface-treated indium-tin oxide thin films,” Chem. Phys. Lett. 315(5–6), 307–312 (1999).
[Crossref]
H.-H. Huang, S.-Y. Chu, P.-C. Kao, Y.-C. Chen, M.-R. Yang, and Z.-L. Tseng, “Enhancement of hole-injection and power efficiency of organic light emitting devices using an ultra-thin ZnO buffer layer,” J. Alloy. Comp. 479(1–2), 520–524 (2009).
[Crossref]
J. S. Kim, R. H. Friend, and F. Cacialli, “Surface energy and polarity of treated indium–tin–oxide anodes for polymer light-emitting diodes studied by contact-angle measurements,” J. Appl. Phys. 86(5), 2774–2778 (1999).
[Crossref]
H. You, Y. Dai, Z. Zhang, and D. Ma, “Improved performances of organic light-emitting diodes with metal oxide as anode buffer,” J. Appl. Phys. 101(2), 026105 (2007).
[Crossref]
M. G. Mason, L. S. Hung, C. W. Tang, S. T. Lee, K. W. Wong, and M. Wang, “Characterization of treated indium–tin–oxide surfaces used in electroluminescent devices,” J. Appl. Phys. 86(3), 1688–1692 (1999).
[Crossref]
C. W. Tang, S. A. VanSlyke, and C. H. Chen, “Electroluminescence of doped organic thin films,” J. Appl. Phys. 65(9), 3610–3616 (1989).
[Crossref]
H.-H. Huang, S.-Y. Chu, P.-C. Kao, Y.-C. Chen, and R.-C. Chang, “Improved hole-injection and power efficiency of organic light-emitting diodes using an ultrathin Li-doped ZnO buffer layer,” J. Electrochem. Soc. 154(3), J105–J108 (2007).
[Crossref]
Z. Z. You, “Combined AFM, XPS, and contact angle studies on treated indium-tin-oxide films for organic light-emitting devices,” Mater. Lett. 61(18), 3809–3814 (2007).
[Crossref]
C. H. Yi, C. H. Jeong, Y. H. Lee, Y. W. Ko, and G. Y. Yeom, “Oxide surface cleaning by an atmospheric pressure plasma,” Surf. Coat. Tech. 177–178, 711–715 (2004).
[Crossref]