Abstract

Room temperature photovoltaic non-resonant detection by large area double-grating-gate InGaP/InGaAs/GaAs heterostructures was investigated in sub-THz range (0.24 THz). Semi-quantitative estimation of the characteristic detection length combined with self-consistent calculations of the electric fields excited in the structure by incoming terahertz radiation allowed us to interpret quantitatively the results and conclude that this detection takes place mainly in the regions of strong oscillating electric field excited in depleted portions of the channel.

© 2010 OSA

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  1. M. Dyakonov and M. Shur, “Plasma wave electronics: novel terahertz devices using two dimensional electron fluid,” IEEE Trans. Electron. Dev. 43(10), 1640–1645 (1996).
    [CrossRef]
  2. W. Knap, V. Kachorovskii, Y. Deng, S. Rumyantsev, J.-Q. Lü, R. Gaska, M. S. Shur, G. Simin, X. Hu, M. Asif Khan, C. A. Saylor, and L. C. Brunel, “Nonresonant detection of terahertz radiation in field effect transistors,” J. Appl. Phys. 91(11), 9346–9353 (2002).
    [CrossRef]
  3. W. Knap, F. Teppe, Y. Meziani, N. Dyakonova, J. Lusakowski, F. Boeuf, T. Skotnicki, D. Maude, S. Rumyantsev, and M. S. Shur, “Plasma wave detection of sub-terahertz and terahertz radiation by silicon field-effect transistors,” Appl. Phys. Lett. 85(4), 675–677 (2004).
    [CrossRef]
  4. R. Tauk, F. Teppe, S. Boubanga, D. Coquillat, W. Knap, Y. M. Meziani, C. Gallon, F. Boeuf, T. Skotnicki, C. Fenouillet-Beranger, D. K. Maude, S. Rumyantsev, and M. S. Shur, “Plasma wave detection of terahertz radiation by silicon field effect transistors: responsivity and noise equivalent power,” Appl. Phys. Lett. 89(25), 253511 (2006).
    [CrossRef]
  5. W. Knap, Y. Deng, S. Rumyantsev, J.-Q. Lü, M. S. Shur, C. A. Saylor, and L. C. Brunel, “Resonant detection of subterahertz radiation by plasma waves in a submicron field-effect transistor,” Appl. Phys. Lett. 80(18), 3433–3435 (2002).
    [CrossRef]
  6. W. Knap, Y. Deng, S. Rumyantsev, and M. S. Shur, “Resonant detection of subterahertz and terahertz radiation by plasma waves in submicron field-effect transistors,” Appl. Phys. Lett. 81(24), 4637–4639 (2002).
    [CrossRef]
  7. A. El Fatimy, F. Teppe, N. Dyakonova, W. Knap, D. Seliuta, G. Valušis, A. Shchepetov, Y. Roelens, S. Bollaert, A. Cappy, and S. Rumyantsev, “Resonant and voltage-tunable terahertz detection in InGaAs/InP nanometer transistors,” Appl. Phys. Lett. 89(13), 131926 (2006).
    [CrossRef]
  8. S. J. Allen, D. S. Tsui, and R. A. Logan, “Observation of the two-dimensional plasmon in silicon inversion layers,” Phys. Rev. Lett. 38(17), 980–983 (1977).
    [CrossRef]
  9. T. N. Theis, “Plasmons in inversion layers,” Surf. Sci. 98(1-3), 515–532 (1980).
    [CrossRef]
  10. E. Batke, D. Heitmann, and C. W. Tu, “Plasmon and magnetoplasmon excitation in two-dimensional electron space-charge layers on GaAs,” Phys. Rev. B 34(10), 6951–6960 (1986).
    [CrossRef]
  11. V. V. Popov, M. S. Shur, G. M. Tsymbalov, and D. V. Fateev, “Higher-order plasmon resonances in GaN field-effect transistor arrays,” Int. J. High Speed Electron. Syst. 17(03), 557–566 (2007).
    [CrossRef]
  12. V. V. Popov, O. V. Polischuk, T. V. Teperik, X. G. Peralta, S. J. Allen, N. J. M. Horing, and M. C. Wanke, “Absorption of terahertz radiation by plasmon modes in a grid-gated double-quantum-well field-effect transistor,” J. Appl. Phys. 94(5), 3556–3562 (2003).
    [CrossRef]
  13. X. G. Peralta, S. J. Allen, M. C. Wanke, N. E. Harff, J. A. Simmons, M. P. Lilly, J. L. Reno, P. J. Burke, and J. P. Eisenstein, “Terahertz photoconductivity and plasmon modes in double-quantum-well field-effect transistors,” Appl. Phys. Lett. 81(9), 1627–1629 (2002).
    [CrossRef]
  14. E. A. Shaner, M. Lee, M. C. Wanke, A. D. Grine, J. L. Reno, and S. J. Allen, “Single-quantum-well grating-gated terahertz plasmon detectors,” Appl. Phys. Lett. 87(19), 193507 (2005).
    [CrossRef]
  15. T. Otsuji, M. Hanabe, T. Nishimura, and E. Sano, “A grating-bicoupled plasma-wave photomixer with resonant-cavity enhanced structure,” Opt. Express 14(11), 4815–4825 (2006), http://www.opticsinfobase.org/oe/abstract.cfm?URI=oe-14-11-4815 .
    [CrossRef] [PubMed]
  16. T. Otsuji, Y. M. Meziani, M. Hanabe, T. Ishibashi, T. Uno, and E. Sano, “Grating-bicoupled plasmon-resonant terahertz emitter fabricated with GaAs-based heterostructure material systems,” Appl. Phys. Lett. 89(26), 263502 (2006).
    [CrossRef]
  17. V. V. Popov, G. M. Tsymbalov, and M. S. Shur, “Plasma wave instability and amplification of terahertz radiation in field-effect-transistor arrays,” J. Phys. Condens. Matter 20(38), 384208 (2008).
    [CrossRef] [PubMed]

2008 (1)

V. V. Popov, G. M. Tsymbalov, and M. S. Shur, “Plasma wave instability and amplification of terahertz radiation in field-effect-transistor arrays,” J. Phys. Condens. Matter 20(38), 384208 (2008).
[CrossRef] [PubMed]

2007 (1)

V. V. Popov, M. S. Shur, G. M. Tsymbalov, and D. V. Fateev, “Higher-order plasmon resonances in GaN field-effect transistor arrays,” Int. J. High Speed Electron. Syst. 17(03), 557–566 (2007).
[CrossRef]

2006 (4)

T. Otsuji, M. Hanabe, T. Nishimura, and E. Sano, “A grating-bicoupled plasma-wave photomixer with resonant-cavity enhanced structure,” Opt. Express 14(11), 4815–4825 (2006), http://www.opticsinfobase.org/oe/abstract.cfm?URI=oe-14-11-4815 .
[CrossRef] [PubMed]

T. Otsuji, Y. M. Meziani, M. Hanabe, T. Ishibashi, T. Uno, and E. Sano, “Grating-bicoupled plasmon-resonant terahertz emitter fabricated with GaAs-based heterostructure material systems,” Appl. Phys. Lett. 89(26), 263502 (2006).
[CrossRef]

R. Tauk, F. Teppe, S. Boubanga, D. Coquillat, W. Knap, Y. M. Meziani, C. Gallon, F. Boeuf, T. Skotnicki, C. Fenouillet-Beranger, D. K. Maude, S. Rumyantsev, and M. S. Shur, “Plasma wave detection of terahertz radiation by silicon field effect transistors: responsivity and noise equivalent power,” Appl. Phys. Lett. 89(25), 253511 (2006).
[CrossRef]

A. El Fatimy, F. Teppe, N. Dyakonova, W. Knap, D. Seliuta, G. Valušis, A. Shchepetov, Y. Roelens, S. Bollaert, A. Cappy, and S. Rumyantsev, “Resonant and voltage-tunable terahertz detection in InGaAs/InP nanometer transistors,” Appl. Phys. Lett. 89(13), 131926 (2006).
[CrossRef]

2005 (1)

E. A. Shaner, M. Lee, M. C. Wanke, A. D. Grine, J. L. Reno, and S. J. Allen, “Single-quantum-well grating-gated terahertz plasmon detectors,” Appl. Phys. Lett. 87(19), 193507 (2005).
[CrossRef]

2004 (1)

W. Knap, F. Teppe, Y. Meziani, N. Dyakonova, J. Lusakowski, F. Boeuf, T. Skotnicki, D. Maude, S. Rumyantsev, and M. S. Shur, “Plasma wave detection of sub-terahertz and terahertz radiation by silicon field-effect transistors,” Appl. Phys. Lett. 85(4), 675–677 (2004).
[CrossRef]

2003 (1)

V. V. Popov, O. V. Polischuk, T. V. Teperik, X. G. Peralta, S. J. Allen, N. J. M. Horing, and M. C. Wanke, “Absorption of terahertz radiation by plasmon modes in a grid-gated double-quantum-well field-effect transistor,” J. Appl. Phys. 94(5), 3556–3562 (2003).
[CrossRef]

2002 (4)

X. G. Peralta, S. J. Allen, M. C. Wanke, N. E. Harff, J. A. Simmons, M. P. Lilly, J. L. Reno, P. J. Burke, and J. P. Eisenstein, “Terahertz photoconductivity and plasmon modes in double-quantum-well field-effect transistors,” Appl. Phys. Lett. 81(9), 1627–1629 (2002).
[CrossRef]

W. Knap, Y. Deng, S. Rumyantsev, J.-Q. Lü, M. S. Shur, C. A. Saylor, and L. C. Brunel, “Resonant detection of subterahertz radiation by plasma waves in a submicron field-effect transistor,” Appl. Phys. Lett. 80(18), 3433–3435 (2002).
[CrossRef]

W. Knap, Y. Deng, S. Rumyantsev, and M. S. Shur, “Resonant detection of subterahertz and terahertz radiation by plasma waves in submicron field-effect transistors,” Appl. Phys. Lett. 81(24), 4637–4639 (2002).
[CrossRef]

W. Knap, V. Kachorovskii, Y. Deng, S. Rumyantsev, J.-Q. Lü, R. Gaska, M. S. Shur, G. Simin, X. Hu, M. Asif Khan, C. A. Saylor, and L. C. Brunel, “Nonresonant detection of terahertz radiation in field effect transistors,” J. Appl. Phys. 91(11), 9346–9353 (2002).
[CrossRef]

1996 (1)

M. Dyakonov and M. Shur, “Plasma wave electronics: novel terahertz devices using two dimensional electron fluid,” IEEE Trans. Electron. Dev. 43(10), 1640–1645 (1996).
[CrossRef]

1986 (1)

E. Batke, D. Heitmann, and C. W. Tu, “Plasmon and magnetoplasmon excitation in two-dimensional electron space-charge layers on GaAs,” Phys. Rev. B 34(10), 6951–6960 (1986).
[CrossRef]

1980 (1)

T. N. Theis, “Plasmons in inversion layers,” Surf. Sci. 98(1-3), 515–532 (1980).
[CrossRef]

1977 (1)

S. J. Allen, D. S. Tsui, and R. A. Logan, “Observation of the two-dimensional plasmon in silicon inversion layers,” Phys. Rev. Lett. 38(17), 980–983 (1977).
[CrossRef]

Allen, S. J.

E. A. Shaner, M. Lee, M. C. Wanke, A. D. Grine, J. L. Reno, and S. J. Allen, “Single-quantum-well grating-gated terahertz plasmon detectors,” Appl. Phys. Lett. 87(19), 193507 (2005).
[CrossRef]

V. V. Popov, O. V. Polischuk, T. V. Teperik, X. G. Peralta, S. J. Allen, N. J. M. Horing, and M. C. Wanke, “Absorption of terahertz radiation by plasmon modes in a grid-gated double-quantum-well field-effect transistor,” J. Appl. Phys. 94(5), 3556–3562 (2003).
[CrossRef]

X. G. Peralta, S. J. Allen, M. C. Wanke, N. E. Harff, J. A. Simmons, M. P. Lilly, J. L. Reno, P. J. Burke, and J. P. Eisenstein, “Terahertz photoconductivity and plasmon modes in double-quantum-well field-effect transistors,” Appl. Phys. Lett. 81(9), 1627–1629 (2002).
[CrossRef]

S. J. Allen, D. S. Tsui, and R. A. Logan, “Observation of the two-dimensional plasmon in silicon inversion layers,” Phys. Rev. Lett. 38(17), 980–983 (1977).
[CrossRef]

Asif Khan, M.

W. Knap, V. Kachorovskii, Y. Deng, S. Rumyantsev, J.-Q. Lü, R. Gaska, M. S. Shur, G. Simin, X. Hu, M. Asif Khan, C. A. Saylor, and L. C. Brunel, “Nonresonant detection of terahertz radiation in field effect transistors,” J. Appl. Phys. 91(11), 9346–9353 (2002).
[CrossRef]

Batke, E.

E. Batke, D. Heitmann, and C. W. Tu, “Plasmon and magnetoplasmon excitation in two-dimensional electron space-charge layers on GaAs,” Phys. Rev. B 34(10), 6951–6960 (1986).
[CrossRef]

Boeuf, F.

R. Tauk, F. Teppe, S. Boubanga, D. Coquillat, W. Knap, Y. M. Meziani, C. Gallon, F. Boeuf, T. Skotnicki, C. Fenouillet-Beranger, D. K. Maude, S. Rumyantsev, and M. S. Shur, “Plasma wave detection of terahertz radiation by silicon field effect transistors: responsivity and noise equivalent power,” Appl. Phys. Lett. 89(25), 253511 (2006).
[CrossRef]

W. Knap, F. Teppe, Y. Meziani, N. Dyakonova, J. Lusakowski, F. Boeuf, T. Skotnicki, D. Maude, S. Rumyantsev, and M. S. Shur, “Plasma wave detection of sub-terahertz and terahertz radiation by silicon field-effect transistors,” Appl. Phys. Lett. 85(4), 675–677 (2004).
[CrossRef]

Bollaert, S.

A. El Fatimy, F. Teppe, N. Dyakonova, W. Knap, D. Seliuta, G. Valušis, A. Shchepetov, Y. Roelens, S. Bollaert, A. Cappy, and S. Rumyantsev, “Resonant and voltage-tunable terahertz detection in InGaAs/InP nanometer transistors,” Appl. Phys. Lett. 89(13), 131926 (2006).
[CrossRef]

Boubanga, S.

R. Tauk, F. Teppe, S. Boubanga, D. Coquillat, W. Knap, Y. M. Meziani, C. Gallon, F. Boeuf, T. Skotnicki, C. Fenouillet-Beranger, D. K. Maude, S. Rumyantsev, and M. S. Shur, “Plasma wave detection of terahertz radiation by silicon field effect transistors: responsivity and noise equivalent power,” Appl. Phys. Lett. 89(25), 253511 (2006).
[CrossRef]

Brunel, L. C.

W. Knap, V. Kachorovskii, Y. Deng, S. Rumyantsev, J.-Q. Lü, R. Gaska, M. S. Shur, G. Simin, X. Hu, M. Asif Khan, C. A. Saylor, and L. C. Brunel, “Nonresonant detection of terahertz radiation in field effect transistors,” J. Appl. Phys. 91(11), 9346–9353 (2002).
[CrossRef]

W. Knap, Y. Deng, S. Rumyantsev, J.-Q. Lü, M. S. Shur, C. A. Saylor, and L. C. Brunel, “Resonant detection of subterahertz radiation by plasma waves in a submicron field-effect transistor,” Appl. Phys. Lett. 80(18), 3433–3435 (2002).
[CrossRef]

Burke, P. J.

X. G. Peralta, S. J. Allen, M. C. Wanke, N. E. Harff, J. A. Simmons, M. P. Lilly, J. L. Reno, P. J. Burke, and J. P. Eisenstein, “Terahertz photoconductivity and plasmon modes in double-quantum-well field-effect transistors,” Appl. Phys. Lett. 81(9), 1627–1629 (2002).
[CrossRef]

Cappy, A.

A. El Fatimy, F. Teppe, N. Dyakonova, W. Knap, D. Seliuta, G. Valušis, A. Shchepetov, Y. Roelens, S. Bollaert, A. Cappy, and S. Rumyantsev, “Resonant and voltage-tunable terahertz detection in InGaAs/InP nanometer transistors,” Appl. Phys. Lett. 89(13), 131926 (2006).
[CrossRef]

Coquillat, D.

R. Tauk, F. Teppe, S. Boubanga, D. Coquillat, W. Knap, Y. M. Meziani, C. Gallon, F. Boeuf, T. Skotnicki, C. Fenouillet-Beranger, D. K. Maude, S. Rumyantsev, and M. S. Shur, “Plasma wave detection of terahertz radiation by silicon field effect transistors: responsivity and noise equivalent power,” Appl. Phys. Lett. 89(25), 253511 (2006).
[CrossRef]

Deng, Y.

W. Knap, Y. Deng, S. Rumyantsev, and M. S. Shur, “Resonant detection of subterahertz and terahertz radiation by plasma waves in submicron field-effect transistors,” Appl. Phys. Lett. 81(24), 4637–4639 (2002).
[CrossRef]

W. Knap, V. Kachorovskii, Y. Deng, S. Rumyantsev, J.-Q. Lü, R. Gaska, M. S. Shur, G. Simin, X. Hu, M. Asif Khan, C. A. Saylor, and L. C. Brunel, “Nonresonant detection of terahertz radiation in field effect transistors,” J. Appl. Phys. 91(11), 9346–9353 (2002).
[CrossRef]

W. Knap, Y. Deng, S. Rumyantsev, J.-Q. Lü, M. S. Shur, C. A. Saylor, and L. C. Brunel, “Resonant detection of subterahertz radiation by plasma waves in a submicron field-effect transistor,” Appl. Phys. Lett. 80(18), 3433–3435 (2002).
[CrossRef]

Dyakonov, M.

M. Dyakonov and M. Shur, “Plasma wave electronics: novel terahertz devices using two dimensional electron fluid,” IEEE Trans. Electron. Dev. 43(10), 1640–1645 (1996).
[CrossRef]

Dyakonova, N.

A. El Fatimy, F. Teppe, N. Dyakonova, W. Knap, D. Seliuta, G. Valušis, A. Shchepetov, Y. Roelens, S. Bollaert, A. Cappy, and S. Rumyantsev, “Resonant and voltage-tunable terahertz detection in InGaAs/InP nanometer transistors,” Appl. Phys. Lett. 89(13), 131926 (2006).
[CrossRef]

W. Knap, F. Teppe, Y. Meziani, N. Dyakonova, J. Lusakowski, F. Boeuf, T. Skotnicki, D. Maude, S. Rumyantsev, and M. S. Shur, “Plasma wave detection of sub-terahertz and terahertz radiation by silicon field-effect transistors,” Appl. Phys. Lett. 85(4), 675–677 (2004).
[CrossRef]

Eisenstein, J. P.

X. G. Peralta, S. J. Allen, M. C. Wanke, N. E. Harff, J. A. Simmons, M. P. Lilly, J. L. Reno, P. J. Burke, and J. P. Eisenstein, “Terahertz photoconductivity and plasmon modes in double-quantum-well field-effect transistors,” Appl. Phys. Lett. 81(9), 1627–1629 (2002).
[CrossRef]

El Fatimy, A.

A. El Fatimy, F. Teppe, N. Dyakonova, W. Knap, D. Seliuta, G. Valušis, A. Shchepetov, Y. Roelens, S. Bollaert, A. Cappy, and S. Rumyantsev, “Resonant and voltage-tunable terahertz detection in InGaAs/InP nanometer transistors,” Appl. Phys. Lett. 89(13), 131926 (2006).
[CrossRef]

Fateev, D. V.

V. V. Popov, M. S. Shur, G. M. Tsymbalov, and D. V. Fateev, “Higher-order plasmon resonances in GaN field-effect transistor arrays,” Int. J. High Speed Electron. Syst. 17(03), 557–566 (2007).
[CrossRef]

Fenouillet-Beranger, C.

R. Tauk, F. Teppe, S. Boubanga, D. Coquillat, W. Knap, Y. M. Meziani, C. Gallon, F. Boeuf, T. Skotnicki, C. Fenouillet-Beranger, D. K. Maude, S. Rumyantsev, and M. S. Shur, “Plasma wave detection of terahertz radiation by silicon field effect transistors: responsivity and noise equivalent power,” Appl. Phys. Lett. 89(25), 253511 (2006).
[CrossRef]

Gallon, C.

R. Tauk, F. Teppe, S. Boubanga, D. Coquillat, W. Knap, Y. M. Meziani, C. Gallon, F. Boeuf, T. Skotnicki, C. Fenouillet-Beranger, D. K. Maude, S. Rumyantsev, and M. S. Shur, “Plasma wave detection of terahertz radiation by silicon field effect transistors: responsivity and noise equivalent power,” Appl. Phys. Lett. 89(25), 253511 (2006).
[CrossRef]

Gaska, R.

W. Knap, V. Kachorovskii, Y. Deng, S. Rumyantsev, J.-Q. Lü, R. Gaska, M. S. Shur, G. Simin, X. Hu, M. Asif Khan, C. A. Saylor, and L. C. Brunel, “Nonresonant detection of terahertz radiation in field effect transistors,” J. Appl. Phys. 91(11), 9346–9353 (2002).
[CrossRef]

Grine, A. D.

E. A. Shaner, M. Lee, M. C. Wanke, A. D. Grine, J. L. Reno, and S. J. Allen, “Single-quantum-well grating-gated terahertz plasmon detectors,” Appl. Phys. Lett. 87(19), 193507 (2005).
[CrossRef]

Hanabe, M.

T. Otsuji, M. Hanabe, T. Nishimura, and E. Sano, “A grating-bicoupled plasma-wave photomixer with resonant-cavity enhanced structure,” Opt. Express 14(11), 4815–4825 (2006), http://www.opticsinfobase.org/oe/abstract.cfm?URI=oe-14-11-4815 .
[CrossRef] [PubMed]

T. Otsuji, Y. M. Meziani, M. Hanabe, T. Ishibashi, T. Uno, and E. Sano, “Grating-bicoupled plasmon-resonant terahertz emitter fabricated with GaAs-based heterostructure material systems,” Appl. Phys. Lett. 89(26), 263502 (2006).
[CrossRef]

Harff, N. E.

X. G. Peralta, S. J. Allen, M. C. Wanke, N. E. Harff, J. A. Simmons, M. P. Lilly, J. L. Reno, P. J. Burke, and J. P. Eisenstein, “Terahertz photoconductivity and plasmon modes in double-quantum-well field-effect transistors,” Appl. Phys. Lett. 81(9), 1627–1629 (2002).
[CrossRef]

Heitmann, D.

E. Batke, D. Heitmann, and C. W. Tu, “Plasmon and magnetoplasmon excitation in two-dimensional electron space-charge layers on GaAs,” Phys. Rev. B 34(10), 6951–6960 (1986).
[CrossRef]

Horing, N. J. M.

V. V. Popov, O. V. Polischuk, T. V. Teperik, X. G. Peralta, S. J. Allen, N. J. M. Horing, and M. C. Wanke, “Absorption of terahertz radiation by plasmon modes in a grid-gated double-quantum-well field-effect transistor,” J. Appl. Phys. 94(5), 3556–3562 (2003).
[CrossRef]

Hu, X.

W. Knap, V. Kachorovskii, Y. Deng, S. Rumyantsev, J.-Q. Lü, R. Gaska, M. S. Shur, G. Simin, X. Hu, M. Asif Khan, C. A. Saylor, and L. C. Brunel, “Nonresonant detection of terahertz radiation in field effect transistors,” J. Appl. Phys. 91(11), 9346–9353 (2002).
[CrossRef]

Ishibashi, T.

T. Otsuji, Y. M. Meziani, M. Hanabe, T. Ishibashi, T. Uno, and E. Sano, “Grating-bicoupled plasmon-resonant terahertz emitter fabricated with GaAs-based heterostructure material systems,” Appl. Phys. Lett. 89(26), 263502 (2006).
[CrossRef]

Kachorovskii, V.

W. Knap, V. Kachorovskii, Y. Deng, S. Rumyantsev, J.-Q. Lü, R. Gaska, M. S. Shur, G. Simin, X. Hu, M. Asif Khan, C. A. Saylor, and L. C. Brunel, “Nonresonant detection of terahertz radiation in field effect transistors,” J. Appl. Phys. 91(11), 9346–9353 (2002).
[CrossRef]

Knap, W.

R. Tauk, F. Teppe, S. Boubanga, D. Coquillat, W. Knap, Y. M. Meziani, C. Gallon, F. Boeuf, T. Skotnicki, C. Fenouillet-Beranger, D. K. Maude, S. Rumyantsev, and M. S. Shur, “Plasma wave detection of terahertz radiation by silicon field effect transistors: responsivity and noise equivalent power,” Appl. Phys. Lett. 89(25), 253511 (2006).
[CrossRef]

A. El Fatimy, F. Teppe, N. Dyakonova, W. Knap, D. Seliuta, G. Valušis, A. Shchepetov, Y. Roelens, S. Bollaert, A. Cappy, and S. Rumyantsev, “Resonant and voltage-tunable terahertz detection in InGaAs/InP nanometer transistors,” Appl. Phys. Lett. 89(13), 131926 (2006).
[CrossRef]

W. Knap, F. Teppe, Y. Meziani, N. Dyakonova, J. Lusakowski, F. Boeuf, T. Skotnicki, D. Maude, S. Rumyantsev, and M. S. Shur, “Plasma wave detection of sub-terahertz and terahertz radiation by silicon field-effect transistors,” Appl. Phys. Lett. 85(4), 675–677 (2004).
[CrossRef]

W. Knap, Y. Deng, S. Rumyantsev, and M. S. Shur, “Resonant detection of subterahertz and terahertz radiation by plasma waves in submicron field-effect transistors,” Appl. Phys. Lett. 81(24), 4637–4639 (2002).
[CrossRef]

W. Knap, V. Kachorovskii, Y. Deng, S. Rumyantsev, J.-Q. Lü, R. Gaska, M. S. Shur, G. Simin, X. Hu, M. Asif Khan, C. A. Saylor, and L. C. Brunel, “Nonresonant detection of terahertz radiation in field effect transistors,” J. Appl. Phys. 91(11), 9346–9353 (2002).
[CrossRef]

W. Knap, Y. Deng, S. Rumyantsev, J.-Q. Lü, M. S. Shur, C. A. Saylor, and L. C. Brunel, “Resonant detection of subterahertz radiation by plasma waves in a submicron field-effect transistor,” Appl. Phys. Lett. 80(18), 3433–3435 (2002).
[CrossRef]

Lee, M.

E. A. Shaner, M. Lee, M. C. Wanke, A. D. Grine, J. L. Reno, and S. J. Allen, “Single-quantum-well grating-gated terahertz plasmon detectors,” Appl. Phys. Lett. 87(19), 193507 (2005).
[CrossRef]

Lilly, M. P.

X. G. Peralta, S. J. Allen, M. C. Wanke, N. E. Harff, J. A. Simmons, M. P. Lilly, J. L. Reno, P. J. Burke, and J. P. Eisenstein, “Terahertz photoconductivity and plasmon modes in double-quantum-well field-effect transistors,” Appl. Phys. Lett. 81(9), 1627–1629 (2002).
[CrossRef]

Logan, R. A.

S. J. Allen, D. S. Tsui, and R. A. Logan, “Observation of the two-dimensional plasmon in silicon inversion layers,” Phys. Rev. Lett. 38(17), 980–983 (1977).
[CrossRef]

Lü, J.-Q.

W. Knap, Y. Deng, S. Rumyantsev, J.-Q. Lü, M. S. Shur, C. A. Saylor, and L. C. Brunel, “Resonant detection of subterahertz radiation by plasma waves in a submicron field-effect transistor,” Appl. Phys. Lett. 80(18), 3433–3435 (2002).
[CrossRef]

W. Knap, V. Kachorovskii, Y. Deng, S. Rumyantsev, J.-Q. Lü, R. Gaska, M. S. Shur, G. Simin, X. Hu, M. Asif Khan, C. A. Saylor, and L. C. Brunel, “Nonresonant detection of terahertz radiation in field effect transistors,” J. Appl. Phys. 91(11), 9346–9353 (2002).
[CrossRef]

Lusakowski, J.

W. Knap, F. Teppe, Y. Meziani, N. Dyakonova, J. Lusakowski, F. Boeuf, T. Skotnicki, D. Maude, S. Rumyantsev, and M. S. Shur, “Plasma wave detection of sub-terahertz and terahertz radiation by silicon field-effect transistors,” Appl. Phys. Lett. 85(4), 675–677 (2004).
[CrossRef]

Maude, D.

W. Knap, F. Teppe, Y. Meziani, N. Dyakonova, J. Lusakowski, F. Boeuf, T. Skotnicki, D. Maude, S. Rumyantsev, and M. S. Shur, “Plasma wave detection of sub-terahertz and terahertz radiation by silicon field-effect transistors,” Appl. Phys. Lett. 85(4), 675–677 (2004).
[CrossRef]

Maude, D. K.

R. Tauk, F. Teppe, S. Boubanga, D. Coquillat, W. Knap, Y. M. Meziani, C. Gallon, F. Boeuf, T. Skotnicki, C. Fenouillet-Beranger, D. K. Maude, S. Rumyantsev, and M. S. Shur, “Plasma wave detection of terahertz radiation by silicon field effect transistors: responsivity and noise equivalent power,” Appl. Phys. Lett. 89(25), 253511 (2006).
[CrossRef]

Meziani, Y.

W. Knap, F. Teppe, Y. Meziani, N. Dyakonova, J. Lusakowski, F. Boeuf, T. Skotnicki, D. Maude, S. Rumyantsev, and M. S. Shur, “Plasma wave detection of sub-terahertz and terahertz radiation by silicon field-effect transistors,” Appl. Phys. Lett. 85(4), 675–677 (2004).
[CrossRef]

Meziani, Y. M.

R. Tauk, F. Teppe, S. Boubanga, D. Coquillat, W. Knap, Y. M. Meziani, C. Gallon, F. Boeuf, T. Skotnicki, C. Fenouillet-Beranger, D. K. Maude, S. Rumyantsev, and M. S. Shur, “Plasma wave detection of terahertz radiation by silicon field effect transistors: responsivity and noise equivalent power,” Appl. Phys. Lett. 89(25), 253511 (2006).
[CrossRef]

T. Otsuji, Y. M. Meziani, M. Hanabe, T. Ishibashi, T. Uno, and E. Sano, “Grating-bicoupled plasmon-resonant terahertz emitter fabricated with GaAs-based heterostructure material systems,” Appl. Phys. Lett. 89(26), 263502 (2006).
[CrossRef]

Nishimura, T.

Otsuji, T.

T. Otsuji, M. Hanabe, T. Nishimura, and E. Sano, “A grating-bicoupled plasma-wave photomixer with resonant-cavity enhanced structure,” Opt. Express 14(11), 4815–4825 (2006), http://www.opticsinfobase.org/oe/abstract.cfm?URI=oe-14-11-4815 .
[CrossRef] [PubMed]

T. Otsuji, Y. M. Meziani, M. Hanabe, T. Ishibashi, T. Uno, and E. Sano, “Grating-bicoupled plasmon-resonant terahertz emitter fabricated with GaAs-based heterostructure material systems,” Appl. Phys. Lett. 89(26), 263502 (2006).
[CrossRef]

Peralta, X. G.

V. V. Popov, O. V. Polischuk, T. V. Teperik, X. G. Peralta, S. J. Allen, N. J. M. Horing, and M. C. Wanke, “Absorption of terahertz radiation by plasmon modes in a grid-gated double-quantum-well field-effect transistor,” J. Appl. Phys. 94(5), 3556–3562 (2003).
[CrossRef]

X. G. Peralta, S. J. Allen, M. C. Wanke, N. E. Harff, J. A. Simmons, M. P. Lilly, J. L. Reno, P. J. Burke, and J. P. Eisenstein, “Terahertz photoconductivity and plasmon modes in double-quantum-well field-effect transistors,” Appl. Phys. Lett. 81(9), 1627–1629 (2002).
[CrossRef]

Polischuk, O. V.

V. V. Popov, O. V. Polischuk, T. V. Teperik, X. G. Peralta, S. J. Allen, N. J. M. Horing, and M. C. Wanke, “Absorption of terahertz radiation by plasmon modes in a grid-gated double-quantum-well field-effect transistor,” J. Appl. Phys. 94(5), 3556–3562 (2003).
[CrossRef]

Popov, V. V.

V. V. Popov, G. M. Tsymbalov, and M. S. Shur, “Plasma wave instability and amplification of terahertz radiation in field-effect-transistor arrays,” J. Phys. Condens. Matter 20(38), 384208 (2008).
[CrossRef] [PubMed]

V. V. Popov, M. S. Shur, G. M. Tsymbalov, and D. V. Fateev, “Higher-order plasmon resonances in GaN field-effect transistor arrays,” Int. J. High Speed Electron. Syst. 17(03), 557–566 (2007).
[CrossRef]

V. V. Popov, O. V. Polischuk, T. V. Teperik, X. G. Peralta, S. J. Allen, N. J. M. Horing, and M. C. Wanke, “Absorption of terahertz radiation by plasmon modes in a grid-gated double-quantum-well field-effect transistor,” J. Appl. Phys. 94(5), 3556–3562 (2003).
[CrossRef]

Reno, J. L.

E. A. Shaner, M. Lee, M. C. Wanke, A. D. Grine, J. L. Reno, and S. J. Allen, “Single-quantum-well grating-gated terahertz plasmon detectors,” Appl. Phys. Lett. 87(19), 193507 (2005).
[CrossRef]

X. G. Peralta, S. J. Allen, M. C. Wanke, N. E. Harff, J. A. Simmons, M. P. Lilly, J. L. Reno, P. J. Burke, and J. P. Eisenstein, “Terahertz photoconductivity and plasmon modes in double-quantum-well field-effect transistors,” Appl. Phys. Lett. 81(9), 1627–1629 (2002).
[CrossRef]

Roelens, Y.

A. El Fatimy, F. Teppe, N. Dyakonova, W. Knap, D. Seliuta, G. Valušis, A. Shchepetov, Y. Roelens, S. Bollaert, A. Cappy, and S. Rumyantsev, “Resonant and voltage-tunable terahertz detection in InGaAs/InP nanometer transistors,” Appl. Phys. Lett. 89(13), 131926 (2006).
[CrossRef]

Rumyantsev, S.

A. El Fatimy, F. Teppe, N. Dyakonova, W. Knap, D. Seliuta, G. Valušis, A. Shchepetov, Y. Roelens, S. Bollaert, A. Cappy, and S. Rumyantsev, “Resonant and voltage-tunable terahertz detection in InGaAs/InP nanometer transistors,” Appl. Phys. Lett. 89(13), 131926 (2006).
[CrossRef]

R. Tauk, F. Teppe, S. Boubanga, D. Coquillat, W. Knap, Y. M. Meziani, C. Gallon, F. Boeuf, T. Skotnicki, C. Fenouillet-Beranger, D. K. Maude, S. Rumyantsev, and M. S. Shur, “Plasma wave detection of terahertz radiation by silicon field effect transistors: responsivity and noise equivalent power,” Appl. Phys. Lett. 89(25), 253511 (2006).
[CrossRef]

W. Knap, F. Teppe, Y. Meziani, N. Dyakonova, J. Lusakowski, F. Boeuf, T. Skotnicki, D. Maude, S. Rumyantsev, and M. S. Shur, “Plasma wave detection of sub-terahertz and terahertz radiation by silicon field-effect transistors,” Appl. Phys. Lett. 85(4), 675–677 (2004).
[CrossRef]

W. Knap, Y. Deng, S. Rumyantsev, and M. S. Shur, “Resonant detection of subterahertz and terahertz radiation by plasma waves in submicron field-effect transistors,” Appl. Phys. Lett. 81(24), 4637–4639 (2002).
[CrossRef]

W. Knap, V. Kachorovskii, Y. Deng, S. Rumyantsev, J.-Q. Lü, R. Gaska, M. S. Shur, G. Simin, X. Hu, M. Asif Khan, C. A. Saylor, and L. C. Brunel, “Nonresonant detection of terahertz radiation in field effect transistors,” J. Appl. Phys. 91(11), 9346–9353 (2002).
[CrossRef]

W. Knap, Y. Deng, S. Rumyantsev, J.-Q. Lü, M. S. Shur, C. A. Saylor, and L. C. Brunel, “Resonant detection of subterahertz radiation by plasma waves in a submicron field-effect transistor,” Appl. Phys. Lett. 80(18), 3433–3435 (2002).
[CrossRef]

Sano, E.

T. Otsuji, Y. M. Meziani, M. Hanabe, T. Ishibashi, T. Uno, and E. Sano, “Grating-bicoupled plasmon-resonant terahertz emitter fabricated with GaAs-based heterostructure material systems,” Appl. Phys. Lett. 89(26), 263502 (2006).
[CrossRef]

T. Otsuji, M. Hanabe, T. Nishimura, and E. Sano, “A grating-bicoupled plasma-wave photomixer with resonant-cavity enhanced structure,” Opt. Express 14(11), 4815–4825 (2006), http://www.opticsinfobase.org/oe/abstract.cfm?URI=oe-14-11-4815 .
[CrossRef] [PubMed]

Saylor, C. A.

W. Knap, V. Kachorovskii, Y. Deng, S. Rumyantsev, J.-Q. Lü, R. Gaska, M. S. Shur, G. Simin, X. Hu, M. Asif Khan, C. A. Saylor, and L. C. Brunel, “Nonresonant detection of terahertz radiation in field effect transistors,” J. Appl. Phys. 91(11), 9346–9353 (2002).
[CrossRef]

W. Knap, Y. Deng, S. Rumyantsev, J.-Q. Lü, M. S. Shur, C. A. Saylor, and L. C. Brunel, “Resonant detection of subterahertz radiation by plasma waves in a submicron field-effect transistor,” Appl. Phys. Lett. 80(18), 3433–3435 (2002).
[CrossRef]

Seliuta, D.

A. El Fatimy, F. Teppe, N. Dyakonova, W. Knap, D. Seliuta, G. Valušis, A. Shchepetov, Y. Roelens, S. Bollaert, A. Cappy, and S. Rumyantsev, “Resonant and voltage-tunable terahertz detection in InGaAs/InP nanometer transistors,” Appl. Phys. Lett. 89(13), 131926 (2006).
[CrossRef]

Shaner, E. A.

E. A. Shaner, M. Lee, M. C. Wanke, A. D. Grine, J. L. Reno, and S. J. Allen, “Single-quantum-well grating-gated terahertz plasmon detectors,” Appl. Phys. Lett. 87(19), 193507 (2005).
[CrossRef]

Shchepetov, A.

A. El Fatimy, F. Teppe, N. Dyakonova, W. Knap, D. Seliuta, G. Valušis, A. Shchepetov, Y. Roelens, S. Bollaert, A. Cappy, and S. Rumyantsev, “Resonant and voltage-tunable terahertz detection in InGaAs/InP nanometer transistors,” Appl. Phys. Lett. 89(13), 131926 (2006).
[CrossRef]

Shur, M.

M. Dyakonov and M. Shur, “Plasma wave electronics: novel terahertz devices using two dimensional electron fluid,” IEEE Trans. Electron. Dev. 43(10), 1640–1645 (1996).
[CrossRef]

Shur, M. S.

V. V. Popov, G. M. Tsymbalov, and M. S. Shur, “Plasma wave instability and amplification of terahertz radiation in field-effect-transistor arrays,” J. Phys. Condens. Matter 20(38), 384208 (2008).
[CrossRef] [PubMed]

V. V. Popov, M. S. Shur, G. M. Tsymbalov, and D. V. Fateev, “Higher-order plasmon resonances in GaN field-effect transistor arrays,” Int. J. High Speed Electron. Syst. 17(03), 557–566 (2007).
[CrossRef]

R. Tauk, F. Teppe, S. Boubanga, D. Coquillat, W. Knap, Y. M. Meziani, C. Gallon, F. Boeuf, T. Skotnicki, C. Fenouillet-Beranger, D. K. Maude, S. Rumyantsev, and M. S. Shur, “Plasma wave detection of terahertz radiation by silicon field effect transistors: responsivity and noise equivalent power,” Appl. Phys. Lett. 89(25), 253511 (2006).
[CrossRef]

W. Knap, F. Teppe, Y. Meziani, N. Dyakonova, J. Lusakowski, F. Boeuf, T. Skotnicki, D. Maude, S. Rumyantsev, and M. S. Shur, “Plasma wave detection of sub-terahertz and terahertz radiation by silicon field-effect transistors,” Appl. Phys. Lett. 85(4), 675–677 (2004).
[CrossRef]

W. Knap, Y. Deng, S. Rumyantsev, and M. S. Shur, “Resonant detection of subterahertz and terahertz radiation by plasma waves in submicron field-effect transistors,” Appl. Phys. Lett. 81(24), 4637–4639 (2002).
[CrossRef]

W. Knap, V. Kachorovskii, Y. Deng, S. Rumyantsev, J.-Q. Lü, R. Gaska, M. S. Shur, G. Simin, X. Hu, M. Asif Khan, C. A. Saylor, and L. C. Brunel, “Nonresonant detection of terahertz radiation in field effect transistors,” J. Appl. Phys. 91(11), 9346–9353 (2002).
[CrossRef]

W. Knap, Y. Deng, S. Rumyantsev, J.-Q. Lü, M. S. Shur, C. A. Saylor, and L. C. Brunel, “Resonant detection of subterahertz radiation by plasma waves in a submicron field-effect transistor,” Appl. Phys. Lett. 80(18), 3433–3435 (2002).
[CrossRef]

Simin, G.

W. Knap, V. Kachorovskii, Y. Deng, S. Rumyantsev, J.-Q. Lü, R. Gaska, M. S. Shur, G. Simin, X. Hu, M. Asif Khan, C. A. Saylor, and L. C. Brunel, “Nonresonant detection of terahertz radiation in field effect transistors,” J. Appl. Phys. 91(11), 9346–9353 (2002).
[CrossRef]

Simmons, J. A.

X. G. Peralta, S. J. Allen, M. C. Wanke, N. E. Harff, J. A. Simmons, M. P. Lilly, J. L. Reno, P. J. Burke, and J. P. Eisenstein, “Terahertz photoconductivity and plasmon modes in double-quantum-well field-effect transistors,” Appl. Phys. Lett. 81(9), 1627–1629 (2002).
[CrossRef]

Skotnicki, T.

R. Tauk, F. Teppe, S. Boubanga, D. Coquillat, W. Knap, Y. M. Meziani, C. Gallon, F. Boeuf, T. Skotnicki, C. Fenouillet-Beranger, D. K. Maude, S. Rumyantsev, and M. S. Shur, “Plasma wave detection of terahertz radiation by silicon field effect transistors: responsivity and noise equivalent power,” Appl. Phys. Lett. 89(25), 253511 (2006).
[CrossRef]

W. Knap, F. Teppe, Y. Meziani, N. Dyakonova, J. Lusakowski, F. Boeuf, T. Skotnicki, D. Maude, S. Rumyantsev, and M. S. Shur, “Plasma wave detection of sub-terahertz and terahertz radiation by silicon field-effect transistors,” Appl. Phys. Lett. 85(4), 675–677 (2004).
[CrossRef]

Tauk, R.

R. Tauk, F. Teppe, S. Boubanga, D. Coquillat, W. Knap, Y. M. Meziani, C. Gallon, F. Boeuf, T. Skotnicki, C. Fenouillet-Beranger, D. K. Maude, S. Rumyantsev, and M. S. Shur, “Plasma wave detection of terahertz radiation by silicon field effect transistors: responsivity and noise equivalent power,” Appl. Phys. Lett. 89(25), 253511 (2006).
[CrossRef]

Teperik, T. V.

V. V. Popov, O. V. Polischuk, T. V. Teperik, X. G. Peralta, S. J. Allen, N. J. M. Horing, and M. C. Wanke, “Absorption of terahertz radiation by plasmon modes in a grid-gated double-quantum-well field-effect transistor,” J. Appl. Phys. 94(5), 3556–3562 (2003).
[CrossRef]

Teppe, F.

R. Tauk, F. Teppe, S. Boubanga, D. Coquillat, W. Knap, Y. M. Meziani, C. Gallon, F. Boeuf, T. Skotnicki, C. Fenouillet-Beranger, D. K. Maude, S. Rumyantsev, and M. S. Shur, “Plasma wave detection of terahertz radiation by silicon field effect transistors: responsivity and noise equivalent power,” Appl. Phys. Lett. 89(25), 253511 (2006).
[CrossRef]

A. El Fatimy, F. Teppe, N. Dyakonova, W. Knap, D. Seliuta, G. Valušis, A. Shchepetov, Y. Roelens, S. Bollaert, A. Cappy, and S. Rumyantsev, “Resonant and voltage-tunable terahertz detection in InGaAs/InP nanometer transistors,” Appl. Phys. Lett. 89(13), 131926 (2006).
[CrossRef]

W. Knap, F. Teppe, Y. Meziani, N. Dyakonova, J. Lusakowski, F. Boeuf, T. Skotnicki, D. Maude, S. Rumyantsev, and M. S. Shur, “Plasma wave detection of sub-terahertz and terahertz radiation by silicon field-effect transistors,” Appl. Phys. Lett. 85(4), 675–677 (2004).
[CrossRef]

Theis, T. N.

T. N. Theis, “Plasmons in inversion layers,” Surf. Sci. 98(1-3), 515–532 (1980).
[CrossRef]

Tsui, D. S.

S. J. Allen, D. S. Tsui, and R. A. Logan, “Observation of the two-dimensional plasmon in silicon inversion layers,” Phys. Rev. Lett. 38(17), 980–983 (1977).
[CrossRef]

Tsymbalov, G. M.

V. V. Popov, G. M. Tsymbalov, and M. S. Shur, “Plasma wave instability and amplification of terahertz radiation in field-effect-transistor arrays,” J. Phys. Condens. Matter 20(38), 384208 (2008).
[CrossRef] [PubMed]

V. V. Popov, M. S. Shur, G. M. Tsymbalov, and D. V. Fateev, “Higher-order plasmon resonances in GaN field-effect transistor arrays,” Int. J. High Speed Electron. Syst. 17(03), 557–566 (2007).
[CrossRef]

Tu, C. W.

E. Batke, D. Heitmann, and C. W. Tu, “Plasmon and magnetoplasmon excitation in two-dimensional electron space-charge layers on GaAs,” Phys. Rev. B 34(10), 6951–6960 (1986).
[CrossRef]

Uno, T.

T. Otsuji, Y. M. Meziani, M. Hanabe, T. Ishibashi, T. Uno, and E. Sano, “Grating-bicoupled plasmon-resonant terahertz emitter fabricated with GaAs-based heterostructure material systems,” Appl. Phys. Lett. 89(26), 263502 (2006).
[CrossRef]

Valušis, G.

A. El Fatimy, F. Teppe, N. Dyakonova, W. Knap, D. Seliuta, G. Valušis, A. Shchepetov, Y. Roelens, S. Bollaert, A. Cappy, and S. Rumyantsev, “Resonant and voltage-tunable terahertz detection in InGaAs/InP nanometer transistors,” Appl. Phys. Lett. 89(13), 131926 (2006).
[CrossRef]

Wanke, M. C.

E. A. Shaner, M. Lee, M. C. Wanke, A. D. Grine, J. L. Reno, and S. J. Allen, “Single-quantum-well grating-gated terahertz plasmon detectors,” Appl. Phys. Lett. 87(19), 193507 (2005).
[CrossRef]

V. V. Popov, O. V. Polischuk, T. V. Teperik, X. G. Peralta, S. J. Allen, N. J. M. Horing, and M. C. Wanke, “Absorption of terahertz radiation by plasmon modes in a grid-gated double-quantum-well field-effect transistor,” J. Appl. Phys. 94(5), 3556–3562 (2003).
[CrossRef]

X. G. Peralta, S. J. Allen, M. C. Wanke, N. E. Harff, J. A. Simmons, M. P. Lilly, J. L. Reno, P. J. Burke, and J. P. Eisenstein, “Terahertz photoconductivity and plasmon modes in double-quantum-well field-effect transistors,” Appl. Phys. Lett. 81(9), 1627–1629 (2002).
[CrossRef]

Appl. Phys. Lett. (8)

W. Knap, F. Teppe, Y. Meziani, N. Dyakonova, J. Lusakowski, F. Boeuf, T. Skotnicki, D. Maude, S. Rumyantsev, and M. S. Shur, “Plasma wave detection of sub-terahertz and terahertz radiation by silicon field-effect transistors,” Appl. Phys. Lett. 85(4), 675–677 (2004).
[CrossRef]

R. Tauk, F. Teppe, S. Boubanga, D. Coquillat, W. Knap, Y. M. Meziani, C. Gallon, F. Boeuf, T. Skotnicki, C. Fenouillet-Beranger, D. K. Maude, S. Rumyantsev, and M. S. Shur, “Plasma wave detection of terahertz radiation by silicon field effect transistors: responsivity and noise equivalent power,” Appl. Phys. Lett. 89(25), 253511 (2006).
[CrossRef]

W. Knap, Y. Deng, S. Rumyantsev, J.-Q. Lü, M. S. Shur, C. A. Saylor, and L. C. Brunel, “Resonant detection of subterahertz radiation by plasma waves in a submicron field-effect transistor,” Appl. Phys. Lett. 80(18), 3433–3435 (2002).
[CrossRef]

W. Knap, Y. Deng, S. Rumyantsev, and M. S. Shur, “Resonant detection of subterahertz and terahertz radiation by plasma waves in submicron field-effect transistors,” Appl. Phys. Lett. 81(24), 4637–4639 (2002).
[CrossRef]

A. El Fatimy, F. Teppe, N. Dyakonova, W. Knap, D. Seliuta, G. Valušis, A. Shchepetov, Y. Roelens, S. Bollaert, A. Cappy, and S. Rumyantsev, “Resonant and voltage-tunable terahertz detection in InGaAs/InP nanometer transistors,” Appl. Phys. Lett. 89(13), 131926 (2006).
[CrossRef]

X. G. Peralta, S. J. Allen, M. C. Wanke, N. E. Harff, J. A. Simmons, M. P. Lilly, J. L. Reno, P. J. Burke, and J. P. Eisenstein, “Terahertz photoconductivity and plasmon modes in double-quantum-well field-effect transistors,” Appl. Phys. Lett. 81(9), 1627–1629 (2002).
[CrossRef]

E. A. Shaner, M. Lee, M. C. Wanke, A. D. Grine, J. L. Reno, and S. J. Allen, “Single-quantum-well grating-gated terahertz plasmon detectors,” Appl. Phys. Lett. 87(19), 193507 (2005).
[CrossRef]

T. Otsuji, Y. M. Meziani, M. Hanabe, T. Ishibashi, T. Uno, and E. Sano, “Grating-bicoupled plasmon-resonant terahertz emitter fabricated with GaAs-based heterostructure material systems,” Appl. Phys. Lett. 89(26), 263502 (2006).
[CrossRef]

IEEE Trans. Electron. Dev. (1)

M. Dyakonov and M. Shur, “Plasma wave electronics: novel terahertz devices using two dimensional electron fluid,” IEEE Trans. Electron. Dev. 43(10), 1640–1645 (1996).
[CrossRef]

Int. J. High Speed Electron. Syst. (1)

V. V. Popov, M. S. Shur, G. M. Tsymbalov, and D. V. Fateev, “Higher-order plasmon resonances in GaN field-effect transistor arrays,” Int. J. High Speed Electron. Syst. 17(03), 557–566 (2007).
[CrossRef]

J. Appl. Phys. (2)

V. V. Popov, O. V. Polischuk, T. V. Teperik, X. G. Peralta, S. J. Allen, N. J. M. Horing, and M. C. Wanke, “Absorption of terahertz radiation by plasmon modes in a grid-gated double-quantum-well field-effect transistor,” J. Appl. Phys. 94(5), 3556–3562 (2003).
[CrossRef]

W. Knap, V. Kachorovskii, Y. Deng, S. Rumyantsev, J.-Q. Lü, R. Gaska, M. S. Shur, G. Simin, X. Hu, M. Asif Khan, C. A. Saylor, and L. C. Brunel, “Nonresonant detection of terahertz radiation in field effect transistors,” J. Appl. Phys. 91(11), 9346–9353 (2002).
[CrossRef]

J. Phys. Condens. Matter (1)

V. V. Popov, G. M. Tsymbalov, and M. S. Shur, “Plasma wave instability and amplification of terahertz radiation in field-effect-transistor arrays,” J. Phys. Condens. Matter 20(38), 384208 (2008).
[CrossRef] [PubMed]

Opt. Express (1)

Phys. Rev. B (1)

E. Batke, D. Heitmann, and C. W. Tu, “Plasmon and magnetoplasmon excitation in two-dimensional electron space-charge layers on GaAs,” Phys. Rev. B 34(10), 6951–6960 (1986).
[CrossRef]

Phys. Rev. Lett. (1)

S. J. Allen, D. S. Tsui, and R. A. Logan, “Observation of the two-dimensional plasmon in silicon inversion layers,” Phys. Rev. Lett. 38(17), 980–983 (1977).
[CrossRef]

Surf. Sci. (1)

T. N. Theis, “Plasmons in inversion layers,” Surf. Sci. 98(1-3), 515–532 (1980).
[CrossRef]

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Figures (6)

Fig. 1
Fig. 1

(a) Top view and (b) schematic side view of the double-grating-gate device with indicated hétérostructure material systems. The external terahertz radiation is incident normally from the top.

Fig. 2
Fig. 2

The photoresponse at 0.24 THz in the structure with LG2= 300 nm as a function of the gate voltage UG1 (for UG2 = 0) and as a function of the gate voltage UG2 (for UG1 = 0). The inset shows the transfer characteristics of the double-grating-gate transistor structure.

Fig. 3
Fig. 3

Photoresponse at 0.24 THz as a function of the azimuthal angle φ between the electric field vector of the incident THz wave and the source-to-drain direction (solid curve). It follows the cos2(φ) dependence (dashed curve) with the strongest photoresponse occurred for φ = 0.

Fig. 4
Fig. 4

In-plane (solid curves) and normal (dashed curves) THz electric field distributions in the 2D electron channel for (a) sample #1 and (b) sample #8 over a half of the structure period, L/2, at frequency 240 GHz. Inset in panel (a) shows a schematic of the double-grating-gate structure. Location of the grating-gate fingers is indicated by thick black bars under the abscissa axes. The origin is located under the centre of the G1 finger.

Fig. 5
Fig. 5

Equilibrium electron density profile in biased structures over the structure period, L. Location of the grating-gate fingers is indicated by thick black bars under the abscissa axes. The origin is located under the edge of the G1 finger.

Fig. 6
Fig. 6

Calculated detection length (open circles) and measured photoresponse (solid diamonds) for different samples under different bias conditions.

Tables (1)

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Table 1 Measured photoresponse for different samples

Equations (6)

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V ( x , t ) t + V ( x , t ) V ( x , t ) x + V ( x , t ) τ + e m E ( x , t ) = 0 ,
e t N ( x , t ) x j ( x , t ) = 0 ,
N ( x ) V ( x ) | E x E 0 | 2 sin ( 2 π Δ x ) cos ( 2 π Δ x ) ,
L D = | E x E 0 | 2 0 w sin ( 2 π Δ x ) cos ( 2 π Δ x ) d x = Δ 4 π | E x E 0 | 2 sin 2 ( 2 π Δ w ) ,
L D π | E x E 0 | 2 w Δ w
L D | E x E 0 | 2 Δ 4 π

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