Abstract

We develop a novel way to fabricate subwavelength nanostructures on the freestanding GaN slab using a GaN-on-silicon system by combining self-assemble technique and backside thinning method. Silicon substrate beneath the GaN slab is removed by bulk silicon micromachining, generating the freestanding GaN slab and eliminating silicon absorption of the emitted light. Fast atom beam (FAB) etching is conducted to thin the freestanding GaN slab from the backside, reducing the number of confined modes inside the GaN slab. With self-assembled silica nanospheres acting as an etching mask, subwavelength nanostructures are realized on the GaN surface by FAB etching. The reflection losses at the GaN interfaces are thus suppressed. When the InGaN/GaN multiple quantum wells (MQWs) active layers are excited, the light extraction efficiency is significantly improved for the freestanding nanostructured GaN slab. This work provides a very practical approach to fabricate freestanding nanostructures on the GaN-on-silicon system for further improving the light extraction efficiency.

© 2010 OSA

Full Article  |  PDF Article

References

  • View by:
  • |
  • |
  • |

  1. M. R. Krames, O. B. Shchekin, R. Mueller-Mach, G. O. Mueller, L. Zhou, G. Harbers, and M. George Craford, “Status and Future of High-Power Light-Emitting Diodes for Solid-State Lighting,” J. Display Technol. 3(2), 160–175 (2007).
    [CrossRef]
  2. T.-X. Lee, K.-F. Gao, W.-T. Chien, and C.-C. Sun, “Light extraction analysis of GaN-based light-emitting diodes with surface texture and/or patterned substrate,” Opt. Express 15(11), 6670–6676 (2007).
    [CrossRef] [PubMed]
  3. J.-M. Bethoux, P. Vennéguès, F. Natali, E. Feltin, O. Tottereau, G. Nataf, P. De Mierry, and F. Semond, “Growth of high quality crack-free AlGaN films on GaN templates using plastic relaxation through buried cracks,” J. Appl. Phys. 94(10), 6499 (2003).
    [CrossRef]
  4. F. Schulze, A. Dadgar, J. Bläsing, A. Diez, and A. Krost, “Metalorganic vapor phase epitaxy grown InGaN/GaN light-emitting diodes on Si(001) substrate,” Appl. Phys. Lett. 88(12), 121114 (2006).
    [CrossRef]
  5. H. W. Choi, K. N. Hui, P. T. Lai, P. Chen, X. H. Zhang, S. Tripathy, J. H. Teng, and S. J. Chua, “Lasing in GaN microdisks pivoted on Si,” Appl. Phys. Lett. 89(21), 211101 (2006).
    [CrossRef]
  6. S. Tripathy, V. K. X. Lin, S. L. Teo, A. Dadgar, A. Diez, J. Bläsing, and A. Krost, “InGaN/GaN light emitting diodes on nanoscale silicon on insulator,” Appl. Phys. Lett. 91(23), 231109 (2007).
    [CrossRef]
  7. Z. Yang, R. N. Wang, S. Jia, D. Wang, B. S. Zhang, K. M. Lau, and K. J. Chen, “Mechanical characterization of suspended GaN microstructures fabricated by GaN-on-patterned-silicon technique,” Appl. Phys. Lett. 88(4), 041913 (2006).
    [CrossRef]
  8. T. Zimmermann, M. Neuburger, P. Benkart, F. J. Hernández-Guillén, C. Pietzka, M. Kunze, I. Daumiller, A. Dadgar, A. Krost, and E. Kohn, “Piezoelectric GaN Sensor Structures,” IEEE Electron Device Lett. 27(5), 309–312 (2006).
    [CrossRef]
  9. A. Rosenberg, K. Bussmann, M. Kim, M. W. Carter, M. A. Mastro, R. T. Holm, R. L. Henry, J. D. Caldwell, and C. R. Eddy, Jr., “Fabrication of GaN suspended photonic crystal slabs and resonant nanocavities on Si(111),” J. Vac. Sci. Technol. B 25(3), 721 (2007).
    [CrossRef]
  10. V. Cimalla, J. Pezoldt, and O. Ambacher, “Group III nitride and SiC based MEMS and NEMS: materials properties, technology and applications,” J. Phys. D: Appl. Phys. 40(20), 6386–6434 (2007).
    [CrossRef]
  11. S. Noda and M. Fujita, “Light-emitting diodes: photonic crystal efficiency boost,” Nat. Photonics 3(3), 129–130 (2009).
    [CrossRef]
  12. S. J. An, J. H. Chae, G.-C. Yi, and G. H. Park, “Enhanced light output of GaN-based light-emitting diodes with ZnO nanorod arrays,” Appl. Phys. Lett. 92(12), 121108 (2008).
    [CrossRef]
  13. H. K. Cho, J. Jang, J.-H. Choi, J. Choi, J. Kim, J. S. Lee, B. Lee, Y. H. Choe, K.-D. Lee, S. H. Kim, K. Lee, S.-K. Kim, and Y.-H. Lee, “Light extraction enhancement from nano-imprinted photonic crystal GaN-based blue light-emitting diodes,” Opt. Express 14(19), 8654–8660 (2006).
    [CrossRef] [PubMed]
  14. I. Schnitzer, E. Yablonovitch, C. Caneau, T. J. Gmitter, and A. Scherer, “30% external quantum efficiency from surface textured, thin-film light-emitting diodes,” Appl. Phys. Lett. 63(16), 2174 (1993).
    [CrossRef]
  15. C. H. Chiu, P. Yu, H. C. Kuo, C. C. Chen, T. C. Lu, S. C. Wang, S. H. Hsu, Y. J. Cheng, and Y. C. Chang, “Broadband and omnidirectional antireflection employing disordered GaN nanopillars,” Opt. Express 16(12), 8748–8754 (2008).
    [CrossRef] [PubMed]
  16. W. N. Ng, C. H. Leung, P. T. Lai, and H. W. Choi, “Photonic crystal light-emitting diodes fabricated by microsphere lithography,” Nanotechnology 19(25), 255302 (2008).
    [CrossRef] [PubMed]
  17. C.-H. Chan, C.-H. Hou, C.-K. Huang, T.-J. Chen, S.-Z. Tseng, H.-T. Chien, C.-H. Kuo, K.-H. Hsieh, Y.-L. Tsai, K.-C. Hsu, and C.-C. Chen, “Patterning periodical Motif on substrates using monolayer of microspheres: application in GaN light-emitting diodes,” Jpn. J. Appl. Phys. 48(2), 020212 (2009).
    [CrossRef]
  18. J. J. Wierer, A. David, and M. M. Megens, “III-nitride photonic-crystal light-emitting diodes with high extraction efficiency,” Nat. Photonics 3(3), 163–169 (2009).
    [CrossRef]
  19. T. Ono, N. Orimoto, S. Lee, T. Simizu, and M. Esashi, “RF-plasma-assisted fast atom beam etching,” Jpn. J. Appl. Phys. 39(Part 1, No. 12B), 6976–6979 (2000).
    [CrossRef]
  20. F. R. Hu, K. Ochi, Y. Zhao, and K. Hane, “High-efficiency light-emitting column-crystallized InGaN/GaN quantum-well flower structure on micropillared Si substrate,” Appl. Phys. Lett. 89(17), 171903 (2006).
    [CrossRef]
  21. F. R. Hu, Y. Kanamori, K. Ochi, Y. Zhao, M. Wakui, and K. Hane, “A 100 nm thick InGaN/GaN multiple quantum-well column-crystallized thin film deposited on Si(111) substrate and its micromachining,” Nanotechnology 19(3), 035305 (2008).
    [CrossRef] [PubMed]
  22. Y. Wang, F. Hu, H. Sameshima, and K. Hane, “Fabrication and characterization of freestanding circular GaN gratings,” accepted by Opt. Express.
  23. Y. Wang, F. Hu, M. Wakui, and K. Hane, “Freestanding GaN resonant gratings at telecommunication range,” IEEE Photon. Technol. Lett. 21(17), 1184–1186 (2009).
    [CrossRef]
  24. Y. Wang, F. Hu, M. Wakui, and K. Hane, “Freestanding circular GaN grating fabricated by fast-atom beam etching,” Appl. Phys., A Mater. Sci. Process. 97(1), 39–43 (2009).
    [CrossRef]
  25. O. B. Shchekin, J. E. Epler, T. A. Trottier, T. Margalith, D. A. Steigerwald, M. O. Holcomb, P. S. Martin, and M. R. Krames, “High performance thin-film flip-chip InGaN–GaN light-emitting diodes,” Appl. Phys. Lett. 89(7), 071109 (2006).
    [CrossRef]
  26. Y.-F. Huang, S. Chattopadhyay, Y.-J. Jen, C.-Y. Peng, T.-A. Liu, Y.-K. Hsu, C.-L. Pan, H.-C. Lo, C.-H. Hsu, Y.-H. Chang, C.-S. Lee, K.-H. Chen, and L.-C. Chen, “Improved broadband and quasi-omnidirectional anti-reflection properties with biomimetic silicon nanostructures,” Nat. Nanotechnol. 2(12), 770–774 (2007).
    [CrossRef]

2009 (5)

S. Noda and M. Fujita, “Light-emitting diodes: photonic crystal efficiency boost,” Nat. Photonics 3(3), 129–130 (2009).
[CrossRef]

C.-H. Chan, C.-H. Hou, C.-K. Huang, T.-J. Chen, S.-Z. Tseng, H.-T. Chien, C.-H. Kuo, K.-H. Hsieh, Y.-L. Tsai, K.-C. Hsu, and C.-C. Chen, “Patterning periodical Motif on substrates using monolayer of microspheres: application in GaN light-emitting diodes,” Jpn. J. Appl. Phys. 48(2), 020212 (2009).
[CrossRef]

J. J. Wierer, A. David, and M. M. Megens, “III-nitride photonic-crystal light-emitting diodes with high extraction efficiency,” Nat. Photonics 3(3), 163–169 (2009).
[CrossRef]

Y. Wang, F. Hu, M. Wakui, and K. Hane, “Freestanding GaN resonant gratings at telecommunication range,” IEEE Photon. Technol. Lett. 21(17), 1184–1186 (2009).
[CrossRef]

Y. Wang, F. Hu, M. Wakui, and K. Hane, “Freestanding circular GaN grating fabricated by fast-atom beam etching,” Appl. Phys., A Mater. Sci. Process. 97(1), 39–43 (2009).
[CrossRef]

2008 (4)

F. R. Hu, Y. Kanamori, K. Ochi, Y. Zhao, M. Wakui, and K. Hane, “A 100 nm thick InGaN/GaN multiple quantum-well column-crystallized thin film deposited on Si(111) substrate and its micromachining,” Nanotechnology 19(3), 035305 (2008).
[CrossRef] [PubMed]

C. H. Chiu, P. Yu, H. C. Kuo, C. C. Chen, T. C. Lu, S. C. Wang, S. H. Hsu, Y. J. Cheng, and Y. C. Chang, “Broadband and omnidirectional antireflection employing disordered GaN nanopillars,” Opt. Express 16(12), 8748–8754 (2008).
[CrossRef] [PubMed]

W. N. Ng, C. H. Leung, P. T. Lai, and H. W. Choi, “Photonic crystal light-emitting diodes fabricated by microsphere lithography,” Nanotechnology 19(25), 255302 (2008).
[CrossRef] [PubMed]

S. J. An, J. H. Chae, G.-C. Yi, and G. H. Park, “Enhanced light output of GaN-based light-emitting diodes with ZnO nanorod arrays,” Appl. Phys. Lett. 92(12), 121108 (2008).
[CrossRef]

2007 (6)

M. R. Krames, O. B. Shchekin, R. Mueller-Mach, G. O. Mueller, L. Zhou, G. Harbers, and M. George Craford, “Status and Future of High-Power Light-Emitting Diodes for Solid-State Lighting,” J. Display Technol. 3(2), 160–175 (2007).
[CrossRef]

T.-X. Lee, K.-F. Gao, W.-T. Chien, and C.-C. Sun, “Light extraction analysis of GaN-based light-emitting diodes with surface texture and/or patterned substrate,” Opt. Express 15(11), 6670–6676 (2007).
[CrossRef] [PubMed]

S. Tripathy, V. K. X. Lin, S. L. Teo, A. Dadgar, A. Diez, J. Bläsing, and A. Krost, “InGaN/GaN light emitting diodes on nanoscale silicon on insulator,” Appl. Phys. Lett. 91(23), 231109 (2007).
[CrossRef]

A. Rosenberg, K. Bussmann, M. Kim, M. W. Carter, M. A. Mastro, R. T. Holm, R. L. Henry, J. D. Caldwell, and C. R. Eddy, Jr., “Fabrication of GaN suspended photonic crystal slabs and resonant nanocavities on Si(111),” J. Vac. Sci. Technol. B 25(3), 721 (2007).
[CrossRef]

V. Cimalla, J. Pezoldt, and O. Ambacher, “Group III nitride and SiC based MEMS and NEMS: materials properties, technology and applications,” J. Phys. D: Appl. Phys. 40(20), 6386–6434 (2007).
[CrossRef]

Y.-F. Huang, S. Chattopadhyay, Y.-J. Jen, C.-Y. Peng, T.-A. Liu, Y.-K. Hsu, C.-L. Pan, H.-C. Lo, C.-H. Hsu, Y.-H. Chang, C.-S. Lee, K.-H. Chen, and L.-C. Chen, “Improved broadband and quasi-omnidirectional anti-reflection properties with biomimetic silicon nanostructures,” Nat. Nanotechnol. 2(12), 770–774 (2007).
[CrossRef]

2006 (7)

F. R. Hu, K. Ochi, Y. Zhao, and K. Hane, “High-efficiency light-emitting column-crystallized InGaN/GaN quantum-well flower structure on micropillared Si substrate,” Appl. Phys. Lett. 89(17), 171903 (2006).
[CrossRef]

O. B. Shchekin, J. E. Epler, T. A. Trottier, T. Margalith, D. A. Steigerwald, M. O. Holcomb, P. S. Martin, and M. R. Krames, “High performance thin-film flip-chip InGaN–GaN light-emitting diodes,” Appl. Phys. Lett. 89(7), 071109 (2006).
[CrossRef]

Z. Yang, R. N. Wang, S. Jia, D. Wang, B. S. Zhang, K. M. Lau, and K. J. Chen, “Mechanical characterization of suspended GaN microstructures fabricated by GaN-on-patterned-silicon technique,” Appl. Phys. Lett. 88(4), 041913 (2006).
[CrossRef]

T. Zimmermann, M. Neuburger, P. Benkart, F. J. Hernández-Guillén, C. Pietzka, M. Kunze, I. Daumiller, A. Dadgar, A. Krost, and E. Kohn, “Piezoelectric GaN Sensor Structures,” IEEE Electron Device Lett. 27(5), 309–312 (2006).
[CrossRef]

F. Schulze, A. Dadgar, J. Bläsing, A. Diez, and A. Krost, “Metalorganic vapor phase epitaxy grown InGaN/GaN light-emitting diodes on Si(001) substrate,” Appl. Phys. Lett. 88(12), 121114 (2006).
[CrossRef]

H. W. Choi, K. N. Hui, P. T. Lai, P. Chen, X. H. Zhang, S. Tripathy, J. H. Teng, and S. J. Chua, “Lasing in GaN microdisks pivoted on Si,” Appl. Phys. Lett. 89(21), 211101 (2006).
[CrossRef]

H. K. Cho, J. Jang, J.-H. Choi, J. Choi, J. Kim, J. S. Lee, B. Lee, Y. H. Choe, K.-D. Lee, S. H. Kim, K. Lee, S.-K. Kim, and Y.-H. Lee, “Light extraction enhancement from nano-imprinted photonic crystal GaN-based blue light-emitting diodes,” Opt. Express 14(19), 8654–8660 (2006).
[CrossRef] [PubMed]

2003 (1)

J.-M. Bethoux, P. Vennéguès, F. Natali, E. Feltin, O. Tottereau, G. Nataf, P. De Mierry, and F. Semond, “Growth of high quality crack-free AlGaN films on GaN templates using plastic relaxation through buried cracks,” J. Appl. Phys. 94(10), 6499 (2003).
[CrossRef]

2000 (1)

T. Ono, N. Orimoto, S. Lee, T. Simizu, and M. Esashi, “RF-plasma-assisted fast atom beam etching,” Jpn. J. Appl. Phys. 39(Part 1, No. 12B), 6976–6979 (2000).
[CrossRef]

1993 (1)

I. Schnitzer, E. Yablonovitch, C. Caneau, T. J. Gmitter, and A. Scherer, “30% external quantum efficiency from surface textured, thin-film light-emitting diodes,” Appl. Phys. Lett. 63(16), 2174 (1993).
[CrossRef]

Ambacher, O.

V. Cimalla, J. Pezoldt, and O. Ambacher, “Group III nitride and SiC based MEMS and NEMS: materials properties, technology and applications,” J. Phys. D: Appl. Phys. 40(20), 6386–6434 (2007).
[CrossRef]

An, S. J.

S. J. An, J. H. Chae, G.-C. Yi, and G. H. Park, “Enhanced light output of GaN-based light-emitting diodes with ZnO nanorod arrays,” Appl. Phys. Lett. 92(12), 121108 (2008).
[CrossRef]

Benkart, P.

T. Zimmermann, M. Neuburger, P. Benkart, F. J. Hernández-Guillén, C. Pietzka, M. Kunze, I. Daumiller, A. Dadgar, A. Krost, and E. Kohn, “Piezoelectric GaN Sensor Structures,” IEEE Electron Device Lett. 27(5), 309–312 (2006).
[CrossRef]

Bethoux, J.-M.

J.-M. Bethoux, P. Vennéguès, F. Natali, E. Feltin, O. Tottereau, G. Nataf, P. De Mierry, and F. Semond, “Growth of high quality crack-free AlGaN films on GaN templates using plastic relaxation through buried cracks,” J. Appl. Phys. 94(10), 6499 (2003).
[CrossRef]

Bläsing, J.

S. Tripathy, V. K. X. Lin, S. L. Teo, A. Dadgar, A. Diez, J. Bläsing, and A. Krost, “InGaN/GaN light emitting diodes on nanoscale silicon on insulator,” Appl. Phys. Lett. 91(23), 231109 (2007).
[CrossRef]

F. Schulze, A. Dadgar, J. Bläsing, A. Diez, and A. Krost, “Metalorganic vapor phase epitaxy grown InGaN/GaN light-emitting diodes on Si(001) substrate,” Appl. Phys. Lett. 88(12), 121114 (2006).
[CrossRef]

Bussmann, K.

A. Rosenberg, K. Bussmann, M. Kim, M. W. Carter, M. A. Mastro, R. T. Holm, R. L. Henry, J. D. Caldwell, and C. R. Eddy, Jr., “Fabrication of GaN suspended photonic crystal slabs and resonant nanocavities on Si(111),” J. Vac. Sci. Technol. B 25(3), 721 (2007).
[CrossRef]

Caldwell, J. D.

A. Rosenberg, K. Bussmann, M. Kim, M. W. Carter, M. A. Mastro, R. T. Holm, R. L. Henry, J. D. Caldwell, and C. R. Eddy, Jr., “Fabrication of GaN suspended photonic crystal slabs and resonant nanocavities on Si(111),” J. Vac. Sci. Technol. B 25(3), 721 (2007).
[CrossRef]

Caneau, C.

I. Schnitzer, E. Yablonovitch, C. Caneau, T. J. Gmitter, and A. Scherer, “30% external quantum efficiency from surface textured, thin-film light-emitting diodes,” Appl. Phys. Lett. 63(16), 2174 (1993).
[CrossRef]

Carter, M. W.

A. Rosenberg, K. Bussmann, M. Kim, M. W. Carter, M. A. Mastro, R. T. Holm, R. L. Henry, J. D. Caldwell, and C. R. Eddy, Jr., “Fabrication of GaN suspended photonic crystal slabs and resonant nanocavities on Si(111),” J. Vac. Sci. Technol. B 25(3), 721 (2007).
[CrossRef]

Chae, J. H.

S. J. An, J. H. Chae, G.-C. Yi, and G. H. Park, “Enhanced light output of GaN-based light-emitting diodes with ZnO nanorod arrays,” Appl. Phys. Lett. 92(12), 121108 (2008).
[CrossRef]

Chan, C.-H.

C.-H. Chan, C.-H. Hou, C.-K. Huang, T.-J. Chen, S.-Z. Tseng, H.-T. Chien, C.-H. Kuo, K.-H. Hsieh, Y.-L. Tsai, K.-C. Hsu, and C.-C. Chen, “Patterning periodical Motif on substrates using monolayer of microspheres: application in GaN light-emitting diodes,” Jpn. J. Appl. Phys. 48(2), 020212 (2009).
[CrossRef]

Chang, Y. C.

C. H. Chiu, P. Yu, H. C. Kuo, C. C. Chen, T. C. Lu, S. C. Wang, S. H. Hsu, Y. J. Cheng, and Y. C. Chang, “Broadband and omnidirectional antireflection employing disordered GaN nanopillars,” Opt. Express 16(12), 8748–8754 (2008).
[CrossRef] [PubMed]

Chang, Y.-H.

Y.-F. Huang, S. Chattopadhyay, Y.-J. Jen, C.-Y. Peng, T.-A. Liu, Y.-K. Hsu, C.-L. Pan, H.-C. Lo, C.-H. Hsu, Y.-H. Chang, C.-S. Lee, K.-H. Chen, and L.-C. Chen, “Improved broadband and quasi-omnidirectional anti-reflection properties with biomimetic silicon nanostructures,” Nat. Nanotechnol. 2(12), 770–774 (2007).
[CrossRef]

Chattopadhyay, S.

Y.-F. Huang, S. Chattopadhyay, Y.-J. Jen, C.-Y. Peng, T.-A. Liu, Y.-K. Hsu, C.-L. Pan, H.-C. Lo, C.-H. Hsu, Y.-H. Chang, C.-S. Lee, K.-H. Chen, and L.-C. Chen, “Improved broadband and quasi-omnidirectional anti-reflection properties with biomimetic silicon nanostructures,” Nat. Nanotechnol. 2(12), 770–774 (2007).
[CrossRef]

Chen, C. C.

C. H. Chiu, P. Yu, H. C. Kuo, C. C. Chen, T. C. Lu, S. C. Wang, S. H. Hsu, Y. J. Cheng, and Y. C. Chang, “Broadband and omnidirectional antireflection employing disordered GaN nanopillars,” Opt. Express 16(12), 8748–8754 (2008).
[CrossRef] [PubMed]

Chen, C.-C.

C.-H. Chan, C.-H. Hou, C.-K. Huang, T.-J. Chen, S.-Z. Tseng, H.-T. Chien, C.-H. Kuo, K.-H. Hsieh, Y.-L. Tsai, K.-C. Hsu, and C.-C. Chen, “Patterning periodical Motif on substrates using monolayer of microspheres: application in GaN light-emitting diodes,” Jpn. J. Appl. Phys. 48(2), 020212 (2009).
[CrossRef]

Chen, K. J.

Z. Yang, R. N. Wang, S. Jia, D. Wang, B. S. Zhang, K. M. Lau, and K. J. Chen, “Mechanical characterization of suspended GaN microstructures fabricated by GaN-on-patterned-silicon technique,” Appl. Phys. Lett. 88(4), 041913 (2006).
[CrossRef]

Chen, K.-H.

Y.-F. Huang, S. Chattopadhyay, Y.-J. Jen, C.-Y. Peng, T.-A. Liu, Y.-K. Hsu, C.-L. Pan, H.-C. Lo, C.-H. Hsu, Y.-H. Chang, C.-S. Lee, K.-H. Chen, and L.-C. Chen, “Improved broadband and quasi-omnidirectional anti-reflection properties with biomimetic silicon nanostructures,” Nat. Nanotechnol. 2(12), 770–774 (2007).
[CrossRef]

Chen, L.-C.

Y.-F. Huang, S. Chattopadhyay, Y.-J. Jen, C.-Y. Peng, T.-A. Liu, Y.-K. Hsu, C.-L. Pan, H.-C. Lo, C.-H. Hsu, Y.-H. Chang, C.-S. Lee, K.-H. Chen, and L.-C. Chen, “Improved broadband and quasi-omnidirectional anti-reflection properties with biomimetic silicon nanostructures,” Nat. Nanotechnol. 2(12), 770–774 (2007).
[CrossRef]

Chen, P.

H. W. Choi, K. N. Hui, P. T. Lai, P. Chen, X. H. Zhang, S. Tripathy, J. H. Teng, and S. J. Chua, “Lasing in GaN microdisks pivoted on Si,” Appl. Phys. Lett. 89(21), 211101 (2006).
[CrossRef]

Chen, T.-J.

C.-H. Chan, C.-H. Hou, C.-K. Huang, T.-J. Chen, S.-Z. Tseng, H.-T. Chien, C.-H. Kuo, K.-H. Hsieh, Y.-L. Tsai, K.-C. Hsu, and C.-C. Chen, “Patterning periodical Motif on substrates using monolayer of microspheres: application in GaN light-emitting diodes,” Jpn. J. Appl. Phys. 48(2), 020212 (2009).
[CrossRef]

Cheng, Y. J.

C. H. Chiu, P. Yu, H. C. Kuo, C. C. Chen, T. C. Lu, S. C. Wang, S. H. Hsu, Y. J. Cheng, and Y. C. Chang, “Broadband and omnidirectional antireflection employing disordered GaN nanopillars,” Opt. Express 16(12), 8748–8754 (2008).
[CrossRef] [PubMed]

Chien, H.-T.

C.-H. Chan, C.-H. Hou, C.-K. Huang, T.-J. Chen, S.-Z. Tseng, H.-T. Chien, C.-H. Kuo, K.-H. Hsieh, Y.-L. Tsai, K.-C. Hsu, and C.-C. Chen, “Patterning periodical Motif on substrates using monolayer of microspheres: application in GaN light-emitting diodes,” Jpn. J. Appl. Phys. 48(2), 020212 (2009).
[CrossRef]

Chien, W.-T.

T.-X. Lee, K.-F. Gao, W.-T. Chien, and C.-C. Sun, “Light extraction analysis of GaN-based light-emitting diodes with surface texture and/or patterned substrate,” Opt. Express 15(11), 6670–6676 (2007).
[CrossRef] [PubMed]

Chiu, C. H.

C. H. Chiu, P. Yu, H. C. Kuo, C. C. Chen, T. C. Lu, S. C. Wang, S. H. Hsu, Y. J. Cheng, and Y. C. Chang, “Broadband and omnidirectional antireflection employing disordered GaN nanopillars,” Opt. Express 16(12), 8748–8754 (2008).
[CrossRef] [PubMed]

Cho, H. K.

H. K. Cho, J. Jang, J.-H. Choi, J. Choi, J. Kim, J. S. Lee, B. Lee, Y. H. Choe, K.-D. Lee, S. H. Kim, K. Lee, S.-K. Kim, and Y.-H. Lee, “Light extraction enhancement from nano-imprinted photonic crystal GaN-based blue light-emitting diodes,” Opt. Express 14(19), 8654–8660 (2006).
[CrossRef] [PubMed]

Choe, Y. H.

H. K. Cho, J. Jang, J.-H. Choi, J. Choi, J. Kim, J. S. Lee, B. Lee, Y. H. Choe, K.-D. Lee, S. H. Kim, K. Lee, S.-K. Kim, and Y.-H. Lee, “Light extraction enhancement from nano-imprinted photonic crystal GaN-based blue light-emitting diodes,” Opt. Express 14(19), 8654–8660 (2006).
[CrossRef] [PubMed]

Choi, H. W.

W. N. Ng, C. H. Leung, P. T. Lai, and H. W. Choi, “Photonic crystal light-emitting diodes fabricated by microsphere lithography,” Nanotechnology 19(25), 255302 (2008).
[CrossRef] [PubMed]

H. W. Choi, K. N. Hui, P. T. Lai, P. Chen, X. H. Zhang, S. Tripathy, J. H. Teng, and S. J. Chua, “Lasing in GaN microdisks pivoted on Si,” Appl. Phys. Lett. 89(21), 211101 (2006).
[CrossRef]

Choi, J.

H. K. Cho, J. Jang, J.-H. Choi, J. Choi, J. Kim, J. S. Lee, B. Lee, Y. H. Choe, K.-D. Lee, S. H. Kim, K. Lee, S.-K. Kim, and Y.-H. Lee, “Light extraction enhancement from nano-imprinted photonic crystal GaN-based blue light-emitting diodes,” Opt. Express 14(19), 8654–8660 (2006).
[CrossRef] [PubMed]

Choi, J.-H.

H. K. Cho, J. Jang, J.-H. Choi, J. Choi, J. Kim, J. S. Lee, B. Lee, Y. H. Choe, K.-D. Lee, S. H. Kim, K. Lee, S.-K. Kim, and Y.-H. Lee, “Light extraction enhancement from nano-imprinted photonic crystal GaN-based blue light-emitting diodes,” Opt. Express 14(19), 8654–8660 (2006).
[CrossRef] [PubMed]

Chua, S. J.

H. W. Choi, K. N. Hui, P. T. Lai, P. Chen, X. H. Zhang, S. Tripathy, J. H. Teng, and S. J. Chua, “Lasing in GaN microdisks pivoted on Si,” Appl. Phys. Lett. 89(21), 211101 (2006).
[CrossRef]

Cimalla, V.

V. Cimalla, J. Pezoldt, and O. Ambacher, “Group III nitride and SiC based MEMS and NEMS: materials properties, technology and applications,” J. Phys. D: Appl. Phys. 40(20), 6386–6434 (2007).
[CrossRef]

Dadgar, A.

S. Tripathy, V. K. X. Lin, S. L. Teo, A. Dadgar, A. Diez, J. Bläsing, and A. Krost, “InGaN/GaN light emitting diodes on nanoscale silicon on insulator,” Appl. Phys. Lett. 91(23), 231109 (2007).
[CrossRef]

T. Zimmermann, M. Neuburger, P. Benkart, F. J. Hernández-Guillén, C. Pietzka, M. Kunze, I. Daumiller, A. Dadgar, A. Krost, and E. Kohn, “Piezoelectric GaN Sensor Structures,” IEEE Electron Device Lett. 27(5), 309–312 (2006).
[CrossRef]

F. Schulze, A. Dadgar, J. Bläsing, A. Diez, and A. Krost, “Metalorganic vapor phase epitaxy grown InGaN/GaN light-emitting diodes on Si(001) substrate,” Appl. Phys. Lett. 88(12), 121114 (2006).
[CrossRef]

Daumiller, I.

T. Zimmermann, M. Neuburger, P. Benkart, F. J. Hernández-Guillén, C. Pietzka, M. Kunze, I. Daumiller, A. Dadgar, A. Krost, and E. Kohn, “Piezoelectric GaN Sensor Structures,” IEEE Electron Device Lett. 27(5), 309–312 (2006).
[CrossRef]

David, A.

J. J. Wierer, A. David, and M. M. Megens, “III-nitride photonic-crystal light-emitting diodes with high extraction efficiency,” Nat. Photonics 3(3), 163–169 (2009).
[CrossRef]

De Mierry, P.

J.-M. Bethoux, P. Vennéguès, F. Natali, E. Feltin, O. Tottereau, G. Nataf, P. De Mierry, and F. Semond, “Growth of high quality crack-free AlGaN films on GaN templates using plastic relaxation through buried cracks,” J. Appl. Phys. 94(10), 6499 (2003).
[CrossRef]

Diez, A.

S. Tripathy, V. K. X. Lin, S. L. Teo, A. Dadgar, A. Diez, J. Bläsing, and A. Krost, “InGaN/GaN light emitting diodes on nanoscale silicon on insulator,” Appl. Phys. Lett. 91(23), 231109 (2007).
[CrossRef]

F. Schulze, A. Dadgar, J. Bläsing, A. Diez, and A. Krost, “Metalorganic vapor phase epitaxy grown InGaN/GaN light-emitting diodes on Si(001) substrate,” Appl. Phys. Lett. 88(12), 121114 (2006).
[CrossRef]

Eddy, C. R.

A. Rosenberg, K. Bussmann, M. Kim, M. W. Carter, M. A. Mastro, R. T. Holm, R. L. Henry, J. D. Caldwell, and C. R. Eddy, Jr., “Fabrication of GaN suspended photonic crystal slabs and resonant nanocavities on Si(111),” J. Vac. Sci. Technol. B 25(3), 721 (2007).
[CrossRef]

Epler, J. E.

O. B. Shchekin, J. E. Epler, T. A. Trottier, T. Margalith, D. A. Steigerwald, M. O. Holcomb, P. S. Martin, and M. R. Krames, “High performance thin-film flip-chip InGaN–GaN light-emitting diodes,” Appl. Phys. Lett. 89(7), 071109 (2006).
[CrossRef]

Esashi, M.

T. Ono, N. Orimoto, S. Lee, T. Simizu, and M. Esashi, “RF-plasma-assisted fast atom beam etching,” Jpn. J. Appl. Phys. 39(Part 1, No. 12B), 6976–6979 (2000).
[CrossRef]

Feltin, E.

J.-M. Bethoux, P. Vennéguès, F. Natali, E. Feltin, O. Tottereau, G. Nataf, P. De Mierry, and F. Semond, “Growth of high quality crack-free AlGaN films on GaN templates using plastic relaxation through buried cracks,” J. Appl. Phys. 94(10), 6499 (2003).
[CrossRef]

Fujita, M.

S. Noda and M. Fujita, “Light-emitting diodes: photonic crystal efficiency boost,” Nat. Photonics 3(3), 129–130 (2009).
[CrossRef]

Gao, K.-F.

T.-X. Lee, K.-F. Gao, W.-T. Chien, and C.-C. Sun, “Light extraction analysis of GaN-based light-emitting diodes with surface texture and/or patterned substrate,” Opt. Express 15(11), 6670–6676 (2007).
[CrossRef] [PubMed]

George Craford, M.

M. R. Krames, O. B. Shchekin, R. Mueller-Mach, G. O. Mueller, L. Zhou, G. Harbers, and M. George Craford, “Status and Future of High-Power Light-Emitting Diodes for Solid-State Lighting,” J. Display Technol. 3(2), 160–175 (2007).
[CrossRef]

Gmitter, T. J.

I. Schnitzer, E. Yablonovitch, C. Caneau, T. J. Gmitter, and A. Scherer, “30% external quantum efficiency from surface textured, thin-film light-emitting diodes,” Appl. Phys. Lett. 63(16), 2174 (1993).
[CrossRef]

Hane, K.

Y. Wang, F. Hu, M. Wakui, and K. Hane, “Freestanding GaN resonant gratings at telecommunication range,” IEEE Photon. Technol. Lett. 21(17), 1184–1186 (2009).
[CrossRef]

Y. Wang, F. Hu, M. Wakui, and K. Hane, “Freestanding circular GaN grating fabricated by fast-atom beam etching,” Appl. Phys., A Mater. Sci. Process. 97(1), 39–43 (2009).
[CrossRef]

F. R. Hu, Y. Kanamori, K. Ochi, Y. Zhao, M. Wakui, and K. Hane, “A 100 nm thick InGaN/GaN multiple quantum-well column-crystallized thin film deposited on Si(111) substrate and its micromachining,” Nanotechnology 19(3), 035305 (2008).
[CrossRef] [PubMed]

F. R. Hu, K. Ochi, Y. Zhao, and K. Hane, “High-efficiency light-emitting column-crystallized InGaN/GaN quantum-well flower structure on micropillared Si substrate,” Appl. Phys. Lett. 89(17), 171903 (2006).
[CrossRef]

Harbers, G.

M. R. Krames, O. B. Shchekin, R. Mueller-Mach, G. O. Mueller, L. Zhou, G. Harbers, and M. George Craford, “Status and Future of High-Power Light-Emitting Diodes for Solid-State Lighting,” J. Display Technol. 3(2), 160–175 (2007).
[CrossRef]

Henry, R. L.

A. Rosenberg, K. Bussmann, M. Kim, M. W. Carter, M. A. Mastro, R. T. Holm, R. L. Henry, J. D. Caldwell, and C. R. Eddy, Jr., “Fabrication of GaN suspended photonic crystal slabs and resonant nanocavities on Si(111),” J. Vac. Sci. Technol. B 25(3), 721 (2007).
[CrossRef]

Hernández-Guillén, F. J.

T. Zimmermann, M. Neuburger, P. Benkart, F. J. Hernández-Guillén, C. Pietzka, M. Kunze, I. Daumiller, A. Dadgar, A. Krost, and E. Kohn, “Piezoelectric GaN Sensor Structures,” IEEE Electron Device Lett. 27(5), 309–312 (2006).
[CrossRef]

Holcomb, M. O.

O. B. Shchekin, J. E. Epler, T. A. Trottier, T. Margalith, D. A. Steigerwald, M. O. Holcomb, P. S. Martin, and M. R. Krames, “High performance thin-film flip-chip InGaN–GaN light-emitting diodes,” Appl. Phys. Lett. 89(7), 071109 (2006).
[CrossRef]

Holm, R. T.

A. Rosenberg, K. Bussmann, M. Kim, M. W. Carter, M. A. Mastro, R. T. Holm, R. L. Henry, J. D. Caldwell, and C. R. Eddy, Jr., “Fabrication of GaN suspended photonic crystal slabs and resonant nanocavities on Si(111),” J. Vac. Sci. Technol. B 25(3), 721 (2007).
[CrossRef]

Hou, C.-H.

C.-H. Chan, C.-H. Hou, C.-K. Huang, T.-J. Chen, S.-Z. Tseng, H.-T. Chien, C.-H. Kuo, K.-H. Hsieh, Y.-L. Tsai, K.-C. Hsu, and C.-C. Chen, “Patterning periodical Motif on substrates using monolayer of microspheres: application in GaN light-emitting diodes,” Jpn. J. Appl. Phys. 48(2), 020212 (2009).
[CrossRef]

Hsieh, K.-H.

C.-H. Chan, C.-H. Hou, C.-K. Huang, T.-J. Chen, S.-Z. Tseng, H.-T. Chien, C.-H. Kuo, K.-H. Hsieh, Y.-L. Tsai, K.-C. Hsu, and C.-C. Chen, “Patterning periodical Motif on substrates using monolayer of microspheres: application in GaN light-emitting diodes,” Jpn. J. Appl. Phys. 48(2), 020212 (2009).
[CrossRef]

Hsu, C.-H.

Y.-F. Huang, S. Chattopadhyay, Y.-J. Jen, C.-Y. Peng, T.-A. Liu, Y.-K. Hsu, C.-L. Pan, H.-C. Lo, C.-H. Hsu, Y.-H. Chang, C.-S. Lee, K.-H. Chen, and L.-C. Chen, “Improved broadband and quasi-omnidirectional anti-reflection properties with biomimetic silicon nanostructures,” Nat. Nanotechnol. 2(12), 770–774 (2007).
[CrossRef]

Hsu, K.-C.

C.-H. Chan, C.-H. Hou, C.-K. Huang, T.-J. Chen, S.-Z. Tseng, H.-T. Chien, C.-H. Kuo, K.-H. Hsieh, Y.-L. Tsai, K.-C. Hsu, and C.-C. Chen, “Patterning periodical Motif on substrates using monolayer of microspheres: application in GaN light-emitting diodes,” Jpn. J. Appl. Phys. 48(2), 020212 (2009).
[CrossRef]

Hsu, S. H.

C. H. Chiu, P. Yu, H. C. Kuo, C. C. Chen, T. C. Lu, S. C. Wang, S. H. Hsu, Y. J. Cheng, and Y. C. Chang, “Broadband and omnidirectional antireflection employing disordered GaN nanopillars,” Opt. Express 16(12), 8748–8754 (2008).
[CrossRef] [PubMed]

Hsu, Y.-K.

Y.-F. Huang, S. Chattopadhyay, Y.-J. Jen, C.-Y. Peng, T.-A. Liu, Y.-K. Hsu, C.-L. Pan, H.-C. Lo, C.-H. Hsu, Y.-H. Chang, C.-S. Lee, K.-H. Chen, and L.-C. Chen, “Improved broadband and quasi-omnidirectional anti-reflection properties with biomimetic silicon nanostructures,” Nat. Nanotechnol. 2(12), 770–774 (2007).
[CrossRef]

Hu, F.

Y. Wang, F. Hu, M. Wakui, and K. Hane, “Freestanding circular GaN grating fabricated by fast-atom beam etching,” Appl. Phys., A Mater. Sci. Process. 97(1), 39–43 (2009).
[CrossRef]

Y. Wang, F. Hu, M. Wakui, and K. Hane, “Freestanding GaN resonant gratings at telecommunication range,” IEEE Photon. Technol. Lett. 21(17), 1184–1186 (2009).
[CrossRef]

Hu, F. R.

F. R. Hu, Y. Kanamori, K. Ochi, Y. Zhao, M. Wakui, and K. Hane, “A 100 nm thick InGaN/GaN multiple quantum-well column-crystallized thin film deposited on Si(111) substrate and its micromachining,” Nanotechnology 19(3), 035305 (2008).
[CrossRef] [PubMed]

F. R. Hu, K. Ochi, Y. Zhao, and K. Hane, “High-efficiency light-emitting column-crystallized InGaN/GaN quantum-well flower structure on micropillared Si substrate,” Appl. Phys. Lett. 89(17), 171903 (2006).
[CrossRef]

Huang, C.-K.

C.-H. Chan, C.-H. Hou, C.-K. Huang, T.-J. Chen, S.-Z. Tseng, H.-T. Chien, C.-H. Kuo, K.-H. Hsieh, Y.-L. Tsai, K.-C. Hsu, and C.-C. Chen, “Patterning periodical Motif on substrates using monolayer of microspheres: application in GaN light-emitting diodes,” Jpn. J. Appl. Phys. 48(2), 020212 (2009).
[CrossRef]

Huang, Y.-F.

Y.-F. Huang, S. Chattopadhyay, Y.-J. Jen, C.-Y. Peng, T.-A. Liu, Y.-K. Hsu, C.-L. Pan, H.-C. Lo, C.-H. Hsu, Y.-H. Chang, C.-S. Lee, K.-H. Chen, and L.-C. Chen, “Improved broadband and quasi-omnidirectional anti-reflection properties with biomimetic silicon nanostructures,” Nat. Nanotechnol. 2(12), 770–774 (2007).
[CrossRef]

Hui, K. N.

H. W. Choi, K. N. Hui, P. T. Lai, P. Chen, X. H. Zhang, S. Tripathy, J. H. Teng, and S. J. Chua, “Lasing in GaN microdisks pivoted on Si,” Appl. Phys. Lett. 89(21), 211101 (2006).
[CrossRef]

Jang, J.

H. K. Cho, J. Jang, J.-H. Choi, J. Choi, J. Kim, J. S. Lee, B. Lee, Y. H. Choe, K.-D. Lee, S. H. Kim, K. Lee, S.-K. Kim, and Y.-H. Lee, “Light extraction enhancement from nano-imprinted photonic crystal GaN-based blue light-emitting diodes,” Opt. Express 14(19), 8654–8660 (2006).
[CrossRef] [PubMed]

Jen, Y.-J.

Y.-F. Huang, S. Chattopadhyay, Y.-J. Jen, C.-Y. Peng, T.-A. Liu, Y.-K. Hsu, C.-L. Pan, H.-C. Lo, C.-H. Hsu, Y.-H. Chang, C.-S. Lee, K.-H. Chen, and L.-C. Chen, “Improved broadband and quasi-omnidirectional anti-reflection properties with biomimetic silicon nanostructures,” Nat. Nanotechnol. 2(12), 770–774 (2007).
[CrossRef]

Jia, S.

Z. Yang, R. N. Wang, S. Jia, D. Wang, B. S. Zhang, K. M. Lau, and K. J. Chen, “Mechanical characterization of suspended GaN microstructures fabricated by GaN-on-patterned-silicon technique,” Appl. Phys. Lett. 88(4), 041913 (2006).
[CrossRef]

Kanamori, Y.

F. R. Hu, Y. Kanamori, K. Ochi, Y. Zhao, M. Wakui, and K. Hane, “A 100 nm thick InGaN/GaN multiple quantum-well column-crystallized thin film deposited on Si(111) substrate and its micromachining,” Nanotechnology 19(3), 035305 (2008).
[CrossRef] [PubMed]

Kim, J.

H. K. Cho, J. Jang, J.-H. Choi, J. Choi, J. Kim, J. S. Lee, B. Lee, Y. H. Choe, K.-D. Lee, S. H. Kim, K. Lee, S.-K. Kim, and Y.-H. Lee, “Light extraction enhancement from nano-imprinted photonic crystal GaN-based blue light-emitting diodes,” Opt. Express 14(19), 8654–8660 (2006).
[CrossRef] [PubMed]

Kim, M.

A. Rosenberg, K. Bussmann, M. Kim, M. W. Carter, M. A. Mastro, R. T. Holm, R. L. Henry, J. D. Caldwell, and C. R. Eddy, Jr., “Fabrication of GaN suspended photonic crystal slabs and resonant nanocavities on Si(111),” J. Vac. Sci. Technol. B 25(3), 721 (2007).
[CrossRef]

Kim, S. H.

H. K. Cho, J. Jang, J.-H. Choi, J. Choi, J. Kim, J. S. Lee, B. Lee, Y. H. Choe, K.-D. Lee, S. H. Kim, K. Lee, S.-K. Kim, and Y.-H. Lee, “Light extraction enhancement from nano-imprinted photonic crystal GaN-based blue light-emitting diodes,” Opt. Express 14(19), 8654–8660 (2006).
[CrossRef] [PubMed]

Kim, S.-K.

H. K. Cho, J. Jang, J.-H. Choi, J. Choi, J. Kim, J. S. Lee, B. Lee, Y. H. Choe, K.-D. Lee, S. H. Kim, K. Lee, S.-K. Kim, and Y.-H. Lee, “Light extraction enhancement from nano-imprinted photonic crystal GaN-based blue light-emitting diodes,” Opt. Express 14(19), 8654–8660 (2006).
[CrossRef] [PubMed]

Kohn, E.

T. Zimmermann, M. Neuburger, P. Benkart, F. J. Hernández-Guillén, C. Pietzka, M. Kunze, I. Daumiller, A. Dadgar, A. Krost, and E. Kohn, “Piezoelectric GaN Sensor Structures,” IEEE Electron Device Lett. 27(5), 309–312 (2006).
[CrossRef]

Krames, M. R.

M. R. Krames, O. B. Shchekin, R. Mueller-Mach, G. O. Mueller, L. Zhou, G. Harbers, and M. George Craford, “Status and Future of High-Power Light-Emitting Diodes for Solid-State Lighting,” J. Display Technol. 3(2), 160–175 (2007).
[CrossRef]

O. B. Shchekin, J. E. Epler, T. A. Trottier, T. Margalith, D. A. Steigerwald, M. O. Holcomb, P. S. Martin, and M. R. Krames, “High performance thin-film flip-chip InGaN–GaN light-emitting diodes,” Appl. Phys. Lett. 89(7), 071109 (2006).
[CrossRef]

Krost, A.

S. Tripathy, V. K. X. Lin, S. L. Teo, A. Dadgar, A. Diez, J. Bläsing, and A. Krost, “InGaN/GaN light emitting diodes on nanoscale silicon on insulator,” Appl. Phys. Lett. 91(23), 231109 (2007).
[CrossRef]

T. Zimmermann, M. Neuburger, P. Benkart, F. J. Hernández-Guillén, C. Pietzka, M. Kunze, I. Daumiller, A. Dadgar, A. Krost, and E. Kohn, “Piezoelectric GaN Sensor Structures,” IEEE Electron Device Lett. 27(5), 309–312 (2006).
[CrossRef]

F. Schulze, A. Dadgar, J. Bläsing, A. Diez, and A. Krost, “Metalorganic vapor phase epitaxy grown InGaN/GaN light-emitting diodes on Si(001) substrate,” Appl. Phys. Lett. 88(12), 121114 (2006).
[CrossRef]

Kunze, M.

T. Zimmermann, M. Neuburger, P. Benkart, F. J. Hernández-Guillén, C. Pietzka, M. Kunze, I. Daumiller, A. Dadgar, A. Krost, and E. Kohn, “Piezoelectric GaN Sensor Structures,” IEEE Electron Device Lett. 27(5), 309–312 (2006).
[CrossRef]

Kuo, C.-H.

C.-H. Chan, C.-H. Hou, C.-K. Huang, T.-J. Chen, S.-Z. Tseng, H.-T. Chien, C.-H. Kuo, K.-H. Hsieh, Y.-L. Tsai, K.-C. Hsu, and C.-C. Chen, “Patterning periodical Motif on substrates using monolayer of microspheres: application in GaN light-emitting diodes,” Jpn. J. Appl. Phys. 48(2), 020212 (2009).
[CrossRef]

Kuo, H. C.

C. H. Chiu, P. Yu, H. C. Kuo, C. C. Chen, T. C. Lu, S. C. Wang, S. H. Hsu, Y. J. Cheng, and Y. C. Chang, “Broadband and omnidirectional antireflection employing disordered GaN nanopillars,” Opt. Express 16(12), 8748–8754 (2008).
[CrossRef] [PubMed]

Lai, P. T.

W. N. Ng, C. H. Leung, P. T. Lai, and H. W. Choi, “Photonic crystal light-emitting diodes fabricated by microsphere lithography,” Nanotechnology 19(25), 255302 (2008).
[CrossRef] [PubMed]

H. W. Choi, K. N. Hui, P. T. Lai, P. Chen, X. H. Zhang, S. Tripathy, J. H. Teng, and S. J. Chua, “Lasing in GaN microdisks pivoted on Si,” Appl. Phys. Lett. 89(21), 211101 (2006).
[CrossRef]

Lau, K. M.

Z. Yang, R. N. Wang, S. Jia, D. Wang, B. S. Zhang, K. M. Lau, and K. J. Chen, “Mechanical characterization of suspended GaN microstructures fabricated by GaN-on-patterned-silicon technique,” Appl. Phys. Lett. 88(4), 041913 (2006).
[CrossRef]

Lee, B.

H. K. Cho, J. Jang, J.-H. Choi, J. Choi, J. Kim, J. S. Lee, B. Lee, Y. H. Choe, K.-D. Lee, S. H. Kim, K. Lee, S.-K. Kim, and Y.-H. Lee, “Light extraction enhancement from nano-imprinted photonic crystal GaN-based blue light-emitting diodes,” Opt. Express 14(19), 8654–8660 (2006).
[CrossRef] [PubMed]

Lee, C.-S.

Y.-F. Huang, S. Chattopadhyay, Y.-J. Jen, C.-Y. Peng, T.-A. Liu, Y.-K. Hsu, C.-L. Pan, H.-C. Lo, C.-H. Hsu, Y.-H. Chang, C.-S. Lee, K.-H. Chen, and L.-C. Chen, “Improved broadband and quasi-omnidirectional anti-reflection properties with biomimetic silicon nanostructures,” Nat. Nanotechnol. 2(12), 770–774 (2007).
[CrossRef]

Lee, J. S.

H. K. Cho, J. Jang, J.-H. Choi, J. Choi, J. Kim, J. S. Lee, B. Lee, Y. H. Choe, K.-D. Lee, S. H. Kim, K. Lee, S.-K. Kim, and Y.-H. Lee, “Light extraction enhancement from nano-imprinted photonic crystal GaN-based blue light-emitting diodes,” Opt. Express 14(19), 8654–8660 (2006).
[CrossRef] [PubMed]

Lee, K.

H. K. Cho, J. Jang, J.-H. Choi, J. Choi, J. Kim, J. S. Lee, B. Lee, Y. H. Choe, K.-D. Lee, S. H. Kim, K. Lee, S.-K. Kim, and Y.-H. Lee, “Light extraction enhancement from nano-imprinted photonic crystal GaN-based blue light-emitting diodes,” Opt. Express 14(19), 8654–8660 (2006).
[CrossRef] [PubMed]

Lee, K.-D.

H. K. Cho, J. Jang, J.-H. Choi, J. Choi, J. Kim, J. S. Lee, B. Lee, Y. H. Choe, K.-D. Lee, S. H. Kim, K. Lee, S.-K. Kim, and Y.-H. Lee, “Light extraction enhancement from nano-imprinted photonic crystal GaN-based blue light-emitting diodes,” Opt. Express 14(19), 8654–8660 (2006).
[CrossRef] [PubMed]

Lee, S.

T. Ono, N. Orimoto, S. Lee, T. Simizu, and M. Esashi, “RF-plasma-assisted fast atom beam etching,” Jpn. J. Appl. Phys. 39(Part 1, No. 12B), 6976–6979 (2000).
[CrossRef]

Lee, T.-X.

T.-X. Lee, K.-F. Gao, W.-T. Chien, and C.-C. Sun, “Light extraction analysis of GaN-based light-emitting diodes with surface texture and/or patterned substrate,” Opt. Express 15(11), 6670–6676 (2007).
[CrossRef] [PubMed]

Lee, Y.-H.

H. K. Cho, J. Jang, J.-H. Choi, J. Choi, J. Kim, J. S. Lee, B. Lee, Y. H. Choe, K.-D. Lee, S. H. Kim, K. Lee, S.-K. Kim, and Y.-H. Lee, “Light extraction enhancement from nano-imprinted photonic crystal GaN-based blue light-emitting diodes,” Opt. Express 14(19), 8654–8660 (2006).
[CrossRef] [PubMed]

Leung, C. H.

W. N. Ng, C. H. Leung, P. T. Lai, and H. W. Choi, “Photonic crystal light-emitting diodes fabricated by microsphere lithography,” Nanotechnology 19(25), 255302 (2008).
[CrossRef] [PubMed]

Lin, V. K. X.

S. Tripathy, V. K. X. Lin, S. L. Teo, A. Dadgar, A. Diez, J. Bläsing, and A. Krost, “InGaN/GaN light emitting diodes on nanoscale silicon on insulator,” Appl. Phys. Lett. 91(23), 231109 (2007).
[CrossRef]

Liu, T.-A.

Y.-F. Huang, S. Chattopadhyay, Y.-J. Jen, C.-Y. Peng, T.-A. Liu, Y.-K. Hsu, C.-L. Pan, H.-C. Lo, C.-H. Hsu, Y.-H. Chang, C.-S. Lee, K.-H. Chen, and L.-C. Chen, “Improved broadband and quasi-omnidirectional anti-reflection properties with biomimetic silicon nanostructures,” Nat. Nanotechnol. 2(12), 770–774 (2007).
[CrossRef]

Lo, H.-C.

Y.-F. Huang, S. Chattopadhyay, Y.-J. Jen, C.-Y. Peng, T.-A. Liu, Y.-K. Hsu, C.-L. Pan, H.-C. Lo, C.-H. Hsu, Y.-H. Chang, C.-S. Lee, K.-H. Chen, and L.-C. Chen, “Improved broadband and quasi-omnidirectional anti-reflection properties with biomimetic silicon nanostructures,” Nat. Nanotechnol. 2(12), 770–774 (2007).
[CrossRef]

Lu, T. C.

C. H. Chiu, P. Yu, H. C. Kuo, C. C. Chen, T. C. Lu, S. C. Wang, S. H. Hsu, Y. J. Cheng, and Y. C. Chang, “Broadband and omnidirectional antireflection employing disordered GaN nanopillars,” Opt. Express 16(12), 8748–8754 (2008).
[CrossRef] [PubMed]

Margalith, T.

O. B. Shchekin, J. E. Epler, T. A. Trottier, T. Margalith, D. A. Steigerwald, M. O. Holcomb, P. S. Martin, and M. R. Krames, “High performance thin-film flip-chip InGaN–GaN light-emitting diodes,” Appl. Phys. Lett. 89(7), 071109 (2006).
[CrossRef]

Martin, P. S.

O. B. Shchekin, J. E. Epler, T. A. Trottier, T. Margalith, D. A. Steigerwald, M. O. Holcomb, P. S. Martin, and M. R. Krames, “High performance thin-film flip-chip InGaN–GaN light-emitting diodes,” Appl. Phys. Lett. 89(7), 071109 (2006).
[CrossRef]

Mastro, M. A.

A. Rosenberg, K. Bussmann, M. Kim, M. W. Carter, M. A. Mastro, R. T. Holm, R. L. Henry, J. D. Caldwell, and C. R. Eddy, Jr., “Fabrication of GaN suspended photonic crystal slabs and resonant nanocavities on Si(111),” J. Vac. Sci. Technol. B 25(3), 721 (2007).
[CrossRef]

Megens, M. M.

J. J. Wierer, A. David, and M. M. Megens, “III-nitride photonic-crystal light-emitting diodes with high extraction efficiency,” Nat. Photonics 3(3), 163–169 (2009).
[CrossRef]

Mueller, G. O.

M. R. Krames, O. B. Shchekin, R. Mueller-Mach, G. O. Mueller, L. Zhou, G. Harbers, and M. George Craford, “Status and Future of High-Power Light-Emitting Diodes for Solid-State Lighting,” J. Display Technol. 3(2), 160–175 (2007).
[CrossRef]

Mueller-Mach, R.

M. R. Krames, O. B. Shchekin, R. Mueller-Mach, G. O. Mueller, L. Zhou, G. Harbers, and M. George Craford, “Status and Future of High-Power Light-Emitting Diodes for Solid-State Lighting,” J. Display Technol. 3(2), 160–175 (2007).
[CrossRef]

Nataf, G.

J.-M. Bethoux, P. Vennéguès, F. Natali, E. Feltin, O. Tottereau, G. Nataf, P. De Mierry, and F. Semond, “Growth of high quality crack-free AlGaN films on GaN templates using plastic relaxation through buried cracks,” J. Appl. Phys. 94(10), 6499 (2003).
[CrossRef]

Natali, F.

J.-M. Bethoux, P. Vennéguès, F. Natali, E. Feltin, O. Tottereau, G. Nataf, P. De Mierry, and F. Semond, “Growth of high quality crack-free AlGaN films on GaN templates using plastic relaxation through buried cracks,” J. Appl. Phys. 94(10), 6499 (2003).
[CrossRef]

Neuburger, M.

T. Zimmermann, M. Neuburger, P. Benkart, F. J. Hernández-Guillén, C. Pietzka, M. Kunze, I. Daumiller, A. Dadgar, A. Krost, and E. Kohn, “Piezoelectric GaN Sensor Structures,” IEEE Electron Device Lett. 27(5), 309–312 (2006).
[CrossRef]

Ng, W. N.

W. N. Ng, C. H. Leung, P. T. Lai, and H. W. Choi, “Photonic crystal light-emitting diodes fabricated by microsphere lithography,” Nanotechnology 19(25), 255302 (2008).
[CrossRef] [PubMed]

Noda, S.

S. Noda and M. Fujita, “Light-emitting diodes: photonic crystal efficiency boost,” Nat. Photonics 3(3), 129–130 (2009).
[CrossRef]

Ochi, K.

F. R. Hu, Y. Kanamori, K. Ochi, Y. Zhao, M. Wakui, and K. Hane, “A 100 nm thick InGaN/GaN multiple quantum-well column-crystallized thin film deposited on Si(111) substrate and its micromachining,” Nanotechnology 19(3), 035305 (2008).
[CrossRef] [PubMed]

F. R. Hu, K. Ochi, Y. Zhao, and K. Hane, “High-efficiency light-emitting column-crystallized InGaN/GaN quantum-well flower structure on micropillared Si substrate,” Appl. Phys. Lett. 89(17), 171903 (2006).
[CrossRef]

Ono, T.

T. Ono, N. Orimoto, S. Lee, T. Simizu, and M. Esashi, “RF-plasma-assisted fast atom beam etching,” Jpn. J. Appl. Phys. 39(Part 1, No. 12B), 6976–6979 (2000).
[CrossRef]

Orimoto, N.

T. Ono, N. Orimoto, S. Lee, T. Simizu, and M. Esashi, “RF-plasma-assisted fast atom beam etching,” Jpn. J. Appl. Phys. 39(Part 1, No. 12B), 6976–6979 (2000).
[CrossRef]

Pan, C.-L.

Y.-F. Huang, S. Chattopadhyay, Y.-J. Jen, C.-Y. Peng, T.-A. Liu, Y.-K. Hsu, C.-L. Pan, H.-C. Lo, C.-H. Hsu, Y.-H. Chang, C.-S. Lee, K.-H. Chen, and L.-C. Chen, “Improved broadband and quasi-omnidirectional anti-reflection properties with biomimetic silicon nanostructures,” Nat. Nanotechnol. 2(12), 770–774 (2007).
[CrossRef]

Park, G. H.

S. J. An, J. H. Chae, G.-C. Yi, and G. H. Park, “Enhanced light output of GaN-based light-emitting diodes with ZnO nanorod arrays,” Appl. Phys. Lett. 92(12), 121108 (2008).
[CrossRef]

Peng, C.-Y.

Y.-F. Huang, S. Chattopadhyay, Y.-J. Jen, C.-Y. Peng, T.-A. Liu, Y.-K. Hsu, C.-L. Pan, H.-C. Lo, C.-H. Hsu, Y.-H. Chang, C.-S. Lee, K.-H. Chen, and L.-C. Chen, “Improved broadband and quasi-omnidirectional anti-reflection properties with biomimetic silicon nanostructures,” Nat. Nanotechnol. 2(12), 770–774 (2007).
[CrossRef]

Pezoldt, J.

V. Cimalla, J. Pezoldt, and O. Ambacher, “Group III nitride and SiC based MEMS and NEMS: materials properties, technology and applications,” J. Phys. D: Appl. Phys. 40(20), 6386–6434 (2007).
[CrossRef]

Pietzka, C.

T. Zimmermann, M. Neuburger, P. Benkart, F. J. Hernández-Guillén, C. Pietzka, M. Kunze, I. Daumiller, A. Dadgar, A. Krost, and E. Kohn, “Piezoelectric GaN Sensor Structures,” IEEE Electron Device Lett. 27(5), 309–312 (2006).
[CrossRef]

Rosenberg, A.

A. Rosenberg, K. Bussmann, M. Kim, M. W. Carter, M. A. Mastro, R. T. Holm, R. L. Henry, J. D. Caldwell, and C. R. Eddy, Jr., “Fabrication of GaN suspended photonic crystal slabs and resonant nanocavities on Si(111),” J. Vac. Sci. Technol. B 25(3), 721 (2007).
[CrossRef]

Scherer, A.

I. Schnitzer, E. Yablonovitch, C. Caneau, T. J. Gmitter, and A. Scherer, “30% external quantum efficiency from surface textured, thin-film light-emitting diodes,” Appl. Phys. Lett. 63(16), 2174 (1993).
[CrossRef]

Schnitzer, I.

I. Schnitzer, E. Yablonovitch, C. Caneau, T. J. Gmitter, and A. Scherer, “30% external quantum efficiency from surface textured, thin-film light-emitting diodes,” Appl. Phys. Lett. 63(16), 2174 (1993).
[CrossRef]

Schulze, F.

F. Schulze, A. Dadgar, J. Bläsing, A. Diez, and A. Krost, “Metalorganic vapor phase epitaxy grown InGaN/GaN light-emitting diodes on Si(001) substrate,” Appl. Phys. Lett. 88(12), 121114 (2006).
[CrossRef]

Semond, F.

J.-M. Bethoux, P. Vennéguès, F. Natali, E. Feltin, O. Tottereau, G. Nataf, P. De Mierry, and F. Semond, “Growth of high quality crack-free AlGaN films on GaN templates using plastic relaxation through buried cracks,” J. Appl. Phys. 94(10), 6499 (2003).
[CrossRef]

Shchekin, O. B.

M. R. Krames, O. B. Shchekin, R. Mueller-Mach, G. O. Mueller, L. Zhou, G. Harbers, and M. George Craford, “Status and Future of High-Power Light-Emitting Diodes for Solid-State Lighting,” J. Display Technol. 3(2), 160–175 (2007).
[CrossRef]

O. B. Shchekin, J. E. Epler, T. A. Trottier, T. Margalith, D. A. Steigerwald, M. O. Holcomb, P. S. Martin, and M. R. Krames, “High performance thin-film flip-chip InGaN–GaN light-emitting diodes,” Appl. Phys. Lett. 89(7), 071109 (2006).
[CrossRef]

Simizu, T.

T. Ono, N. Orimoto, S. Lee, T. Simizu, and M. Esashi, “RF-plasma-assisted fast atom beam etching,” Jpn. J. Appl. Phys. 39(Part 1, No. 12B), 6976–6979 (2000).
[CrossRef]

Steigerwald, D. A.

O. B. Shchekin, J. E. Epler, T. A. Trottier, T. Margalith, D. A. Steigerwald, M. O. Holcomb, P. S. Martin, and M. R. Krames, “High performance thin-film flip-chip InGaN–GaN light-emitting diodes,” Appl. Phys. Lett. 89(7), 071109 (2006).
[CrossRef]

Sun, C.-C.

T.-X. Lee, K.-F. Gao, W.-T. Chien, and C.-C. Sun, “Light extraction analysis of GaN-based light-emitting diodes with surface texture and/or patterned substrate,” Opt. Express 15(11), 6670–6676 (2007).
[CrossRef] [PubMed]

Teng, J. H.

H. W. Choi, K. N. Hui, P. T. Lai, P. Chen, X. H. Zhang, S. Tripathy, J. H. Teng, and S. J. Chua, “Lasing in GaN microdisks pivoted on Si,” Appl. Phys. Lett. 89(21), 211101 (2006).
[CrossRef]

Teo, S. L.

S. Tripathy, V. K. X. Lin, S. L. Teo, A. Dadgar, A. Diez, J. Bläsing, and A. Krost, “InGaN/GaN light emitting diodes on nanoscale silicon on insulator,” Appl. Phys. Lett. 91(23), 231109 (2007).
[CrossRef]

Tottereau, O.

J.-M. Bethoux, P. Vennéguès, F. Natali, E. Feltin, O. Tottereau, G. Nataf, P. De Mierry, and F. Semond, “Growth of high quality crack-free AlGaN films on GaN templates using plastic relaxation through buried cracks,” J. Appl. Phys. 94(10), 6499 (2003).
[CrossRef]

Tripathy, S.

S. Tripathy, V. K. X. Lin, S. L. Teo, A. Dadgar, A. Diez, J. Bläsing, and A. Krost, “InGaN/GaN light emitting diodes on nanoscale silicon on insulator,” Appl. Phys. Lett. 91(23), 231109 (2007).
[CrossRef]

H. W. Choi, K. N. Hui, P. T. Lai, P. Chen, X. H. Zhang, S. Tripathy, J. H. Teng, and S. J. Chua, “Lasing in GaN microdisks pivoted on Si,” Appl. Phys. Lett. 89(21), 211101 (2006).
[CrossRef]

Trottier, T. A.

O. B. Shchekin, J. E. Epler, T. A. Trottier, T. Margalith, D. A. Steigerwald, M. O. Holcomb, P. S. Martin, and M. R. Krames, “High performance thin-film flip-chip InGaN–GaN light-emitting diodes,” Appl. Phys. Lett. 89(7), 071109 (2006).
[CrossRef]

Tsai, Y.-L.

C.-H. Chan, C.-H. Hou, C.-K. Huang, T.-J. Chen, S.-Z. Tseng, H.-T. Chien, C.-H. Kuo, K.-H. Hsieh, Y.-L. Tsai, K.-C. Hsu, and C.-C. Chen, “Patterning periodical Motif on substrates using monolayer of microspheres: application in GaN light-emitting diodes,” Jpn. J. Appl. Phys. 48(2), 020212 (2009).
[CrossRef]

Tseng, S.-Z.

C.-H. Chan, C.-H. Hou, C.-K. Huang, T.-J. Chen, S.-Z. Tseng, H.-T. Chien, C.-H. Kuo, K.-H. Hsieh, Y.-L. Tsai, K.-C. Hsu, and C.-C. Chen, “Patterning periodical Motif on substrates using monolayer of microspheres: application in GaN light-emitting diodes,” Jpn. J. Appl. Phys. 48(2), 020212 (2009).
[CrossRef]

Vennéguès, P.

J.-M. Bethoux, P. Vennéguès, F. Natali, E. Feltin, O. Tottereau, G. Nataf, P. De Mierry, and F. Semond, “Growth of high quality crack-free AlGaN films on GaN templates using plastic relaxation through buried cracks,” J. Appl. Phys. 94(10), 6499 (2003).
[CrossRef]

Wakui, M.

Y. Wang, F. Hu, M. Wakui, and K. Hane, “Freestanding GaN resonant gratings at telecommunication range,” IEEE Photon. Technol. Lett. 21(17), 1184–1186 (2009).
[CrossRef]

Y. Wang, F. Hu, M. Wakui, and K. Hane, “Freestanding circular GaN grating fabricated by fast-atom beam etching,” Appl. Phys., A Mater. Sci. Process. 97(1), 39–43 (2009).
[CrossRef]

F. R. Hu, Y. Kanamori, K. Ochi, Y. Zhao, M. Wakui, and K. Hane, “A 100 nm thick InGaN/GaN multiple quantum-well column-crystallized thin film deposited on Si(111) substrate and its micromachining,” Nanotechnology 19(3), 035305 (2008).
[CrossRef] [PubMed]

Wang, D.

Z. Yang, R. N. Wang, S. Jia, D. Wang, B. S. Zhang, K. M. Lau, and K. J. Chen, “Mechanical characterization of suspended GaN microstructures fabricated by GaN-on-patterned-silicon technique,” Appl. Phys. Lett. 88(4), 041913 (2006).
[CrossRef]

Wang, R. N.

Z. Yang, R. N. Wang, S. Jia, D. Wang, B. S. Zhang, K. M. Lau, and K. J. Chen, “Mechanical characterization of suspended GaN microstructures fabricated by GaN-on-patterned-silicon technique,” Appl. Phys. Lett. 88(4), 041913 (2006).
[CrossRef]

Wang, S. C.

C. H. Chiu, P. Yu, H. C. Kuo, C. C. Chen, T. C. Lu, S. C. Wang, S. H. Hsu, Y. J. Cheng, and Y. C. Chang, “Broadband and omnidirectional antireflection employing disordered GaN nanopillars,” Opt. Express 16(12), 8748–8754 (2008).
[CrossRef] [PubMed]

Wang, Y.

Y. Wang, F. Hu, M. Wakui, and K. Hane, “Freestanding GaN resonant gratings at telecommunication range,” IEEE Photon. Technol. Lett. 21(17), 1184–1186 (2009).
[CrossRef]

Y. Wang, F. Hu, M. Wakui, and K. Hane, “Freestanding circular GaN grating fabricated by fast-atom beam etching,” Appl. Phys., A Mater. Sci. Process. 97(1), 39–43 (2009).
[CrossRef]

Wierer, J. J.

J. J. Wierer, A. David, and M. M. Megens, “III-nitride photonic-crystal light-emitting diodes with high extraction efficiency,” Nat. Photonics 3(3), 163–169 (2009).
[CrossRef]

Yablonovitch, E.

I. Schnitzer, E. Yablonovitch, C. Caneau, T. J. Gmitter, and A. Scherer, “30% external quantum efficiency from surface textured, thin-film light-emitting diodes,” Appl. Phys. Lett. 63(16), 2174 (1993).
[CrossRef]

Yang, Z.

Z. Yang, R. N. Wang, S. Jia, D. Wang, B. S. Zhang, K. M. Lau, and K. J. Chen, “Mechanical characterization of suspended GaN microstructures fabricated by GaN-on-patterned-silicon technique,” Appl. Phys. Lett. 88(4), 041913 (2006).
[CrossRef]

Yi, G.-C.

S. J. An, J. H. Chae, G.-C. Yi, and G. H. Park, “Enhanced light output of GaN-based light-emitting diodes with ZnO nanorod arrays,” Appl. Phys. Lett. 92(12), 121108 (2008).
[CrossRef]

Yu, P.

C. H. Chiu, P. Yu, H. C. Kuo, C. C. Chen, T. C. Lu, S. C. Wang, S. H. Hsu, Y. J. Cheng, and Y. C. Chang, “Broadband and omnidirectional antireflection employing disordered GaN nanopillars,” Opt. Express 16(12), 8748–8754 (2008).
[CrossRef] [PubMed]

Zhang, B. S.

Z. Yang, R. N. Wang, S. Jia, D. Wang, B. S. Zhang, K. M. Lau, and K. J. Chen, “Mechanical characterization of suspended GaN microstructures fabricated by GaN-on-patterned-silicon technique,” Appl. Phys. Lett. 88(4), 041913 (2006).
[CrossRef]

Zhang, X. H.

H. W. Choi, K. N. Hui, P. T. Lai, P. Chen, X. H. Zhang, S. Tripathy, J. H. Teng, and S. J. Chua, “Lasing in GaN microdisks pivoted on Si,” Appl. Phys. Lett. 89(21), 211101 (2006).
[CrossRef]

Zhao, Y.

F. R. Hu, Y. Kanamori, K. Ochi, Y. Zhao, M. Wakui, and K. Hane, “A 100 nm thick InGaN/GaN multiple quantum-well column-crystallized thin film deposited on Si(111) substrate and its micromachining,” Nanotechnology 19(3), 035305 (2008).
[CrossRef] [PubMed]

F. R. Hu, K. Ochi, Y. Zhao, and K. Hane, “High-efficiency light-emitting column-crystallized InGaN/GaN quantum-well flower structure on micropillared Si substrate,” Appl. Phys. Lett. 89(17), 171903 (2006).
[CrossRef]

Zhou, L.

M. R. Krames, O. B. Shchekin, R. Mueller-Mach, G. O. Mueller, L. Zhou, G. Harbers, and M. George Craford, “Status and Future of High-Power Light-Emitting Diodes for Solid-State Lighting,” J. Display Technol. 3(2), 160–175 (2007).
[CrossRef]

Zimmermann, T.

T. Zimmermann, M. Neuburger, P. Benkart, F. J. Hernández-Guillén, C. Pietzka, M. Kunze, I. Daumiller, A. Dadgar, A. Krost, and E. Kohn, “Piezoelectric GaN Sensor Structures,” IEEE Electron Device Lett. 27(5), 309–312 (2006).
[CrossRef]

Appl. Phys. Lett. (8)

F. Schulze, A. Dadgar, J. Bläsing, A. Diez, and A. Krost, “Metalorganic vapor phase epitaxy grown InGaN/GaN light-emitting diodes on Si(001) substrate,” Appl. Phys. Lett. 88(12), 121114 (2006).
[CrossRef]

H. W. Choi, K. N. Hui, P. T. Lai, P. Chen, X. H. Zhang, S. Tripathy, J. H. Teng, and S. J. Chua, “Lasing in GaN microdisks pivoted on Si,” Appl. Phys. Lett. 89(21), 211101 (2006).
[CrossRef]

S. Tripathy, V. K. X. Lin, S. L. Teo, A. Dadgar, A. Diez, J. Bläsing, and A. Krost, “InGaN/GaN light emitting diodes on nanoscale silicon on insulator,” Appl. Phys. Lett. 91(23), 231109 (2007).
[CrossRef]

Z. Yang, R. N. Wang, S. Jia, D. Wang, B. S. Zhang, K. M. Lau, and K. J. Chen, “Mechanical characterization of suspended GaN microstructures fabricated by GaN-on-patterned-silicon technique,” Appl. Phys. Lett. 88(4), 041913 (2006).
[CrossRef]

S. J. An, J. H. Chae, G.-C. Yi, and G. H. Park, “Enhanced light output of GaN-based light-emitting diodes with ZnO nanorod arrays,” Appl. Phys. Lett. 92(12), 121108 (2008).
[CrossRef]

I. Schnitzer, E. Yablonovitch, C. Caneau, T. J. Gmitter, and A. Scherer, “30% external quantum efficiency from surface textured, thin-film light-emitting diodes,” Appl. Phys. Lett. 63(16), 2174 (1993).
[CrossRef]

F. R. Hu, K. Ochi, Y. Zhao, and K. Hane, “High-efficiency light-emitting column-crystallized InGaN/GaN quantum-well flower structure on micropillared Si substrate,” Appl. Phys. Lett. 89(17), 171903 (2006).
[CrossRef]

O. B. Shchekin, J. E. Epler, T. A. Trottier, T. Margalith, D. A. Steigerwald, M. O. Holcomb, P. S. Martin, and M. R. Krames, “High performance thin-film flip-chip InGaN–GaN light-emitting diodes,” Appl. Phys. Lett. 89(7), 071109 (2006).
[CrossRef]

Appl. Phys., A Mater. Sci. Process. (1)

Y. Wang, F. Hu, M. Wakui, and K. Hane, “Freestanding circular GaN grating fabricated by fast-atom beam etching,” Appl. Phys., A Mater. Sci. Process. 97(1), 39–43 (2009).
[CrossRef]

IEEE Electron Device Lett. (1)

T. Zimmermann, M. Neuburger, P. Benkart, F. J. Hernández-Guillén, C. Pietzka, M. Kunze, I. Daumiller, A. Dadgar, A. Krost, and E. Kohn, “Piezoelectric GaN Sensor Structures,” IEEE Electron Device Lett. 27(5), 309–312 (2006).
[CrossRef]

IEEE Photon. Technol. Lett. (1)

Y. Wang, F. Hu, M. Wakui, and K. Hane, “Freestanding GaN resonant gratings at telecommunication range,” IEEE Photon. Technol. Lett. 21(17), 1184–1186 (2009).
[CrossRef]

J. Appl. Phys. (1)

J.-M. Bethoux, P. Vennéguès, F. Natali, E. Feltin, O. Tottereau, G. Nataf, P. De Mierry, and F. Semond, “Growth of high quality crack-free AlGaN films on GaN templates using plastic relaxation through buried cracks,” J. Appl. Phys. 94(10), 6499 (2003).
[CrossRef]

J. Display Technol. (1)

M. R. Krames, O. B. Shchekin, R. Mueller-Mach, G. O. Mueller, L. Zhou, G. Harbers, and M. George Craford, “Status and Future of High-Power Light-Emitting Diodes for Solid-State Lighting,” J. Display Technol. 3(2), 160–175 (2007).
[CrossRef]

J. Phys. D: Appl. Phys. (1)

V. Cimalla, J. Pezoldt, and O. Ambacher, “Group III nitride and SiC based MEMS and NEMS: materials properties, technology and applications,” J. Phys. D: Appl. Phys. 40(20), 6386–6434 (2007).
[CrossRef]

J. Vac. Sci. Technol. B (1)

A. Rosenberg, K. Bussmann, M. Kim, M. W. Carter, M. A. Mastro, R. T. Holm, R. L. Henry, J. D. Caldwell, and C. R. Eddy, Jr., “Fabrication of GaN suspended photonic crystal slabs and resonant nanocavities on Si(111),” J. Vac. Sci. Technol. B 25(3), 721 (2007).
[CrossRef]

Jpn. J. Appl. Phys. (2)

C.-H. Chan, C.-H. Hou, C.-K. Huang, T.-J. Chen, S.-Z. Tseng, H.-T. Chien, C.-H. Kuo, K.-H. Hsieh, Y.-L. Tsai, K.-C. Hsu, and C.-C. Chen, “Patterning periodical Motif on substrates using monolayer of microspheres: application in GaN light-emitting diodes,” Jpn. J. Appl. Phys. 48(2), 020212 (2009).
[CrossRef]

T. Ono, N. Orimoto, S. Lee, T. Simizu, and M. Esashi, “RF-plasma-assisted fast atom beam etching,” Jpn. J. Appl. Phys. 39(Part 1, No. 12B), 6976–6979 (2000).
[CrossRef]

Nanotechnology (2)

F. R. Hu, Y. Kanamori, K. Ochi, Y. Zhao, M. Wakui, and K. Hane, “A 100 nm thick InGaN/GaN multiple quantum-well column-crystallized thin film deposited on Si(111) substrate and its micromachining,” Nanotechnology 19(3), 035305 (2008).
[CrossRef] [PubMed]

W. N. Ng, C. H. Leung, P. T. Lai, and H. W. Choi, “Photonic crystal light-emitting diodes fabricated by microsphere lithography,” Nanotechnology 19(25), 255302 (2008).
[CrossRef] [PubMed]

Nat. Nanotechnol. (1)

Y.-F. Huang, S. Chattopadhyay, Y.-J. Jen, C.-Y. Peng, T.-A. Liu, Y.-K. Hsu, C.-L. Pan, H.-C. Lo, C.-H. Hsu, Y.-H. Chang, C.-S. Lee, K.-H. Chen, and L.-C. Chen, “Improved broadband and quasi-omnidirectional anti-reflection properties with biomimetic silicon nanostructures,” Nat. Nanotechnol. 2(12), 770–774 (2007).
[CrossRef]

Nat. Photonics (2)

J. J. Wierer, A. David, and M. M. Megens, “III-nitride photonic-crystal light-emitting diodes with high extraction efficiency,” Nat. Photonics 3(3), 163–169 (2009).
[CrossRef]

S. Noda and M. Fujita, “Light-emitting diodes: photonic crystal efficiency boost,” Nat. Photonics 3(3), 129–130 (2009).
[CrossRef]

Opt. Express (3)

T.-X. Lee, K.-F. Gao, W.-T. Chien, and C.-C. Sun, “Light extraction analysis of GaN-based light-emitting diodes with surface texture and/or patterned substrate,” Opt. Express 15(11), 6670–6676 (2007).
[CrossRef] [PubMed]

C. H. Chiu, P. Yu, H. C. Kuo, C. C. Chen, T. C. Lu, S. C. Wang, S. H. Hsu, Y. J. Cheng, and Y. C. Chang, “Broadband and omnidirectional antireflection employing disordered GaN nanopillars,” Opt. Express 16(12), 8748–8754 (2008).
[CrossRef] [PubMed]

H. K. Cho, J. Jang, J.-H. Choi, J. Choi, J. Kim, J. S. Lee, B. Lee, Y. H. Choe, K.-D. Lee, S. H. Kim, K. Lee, S.-K. Kim, and Y.-H. Lee, “Light extraction enhancement from nano-imprinted photonic crystal GaN-based blue light-emitting diodes,” Opt. Express 14(19), 8654–8660 (2006).
[CrossRef] [PubMed]

Other (1)

Y. Wang, F. Hu, H. Sameshima, and K. Hane, “Fabrication and characterization of freestanding circular GaN gratings,” accepted by Opt. Express.

Cited By

OSA participates in CrossRef's Cited-By Linking service. Citing articles from OSA journals and other participating publishers are listed here.

Alert me when this article is cited.


Figures (4)

Fig. 1
Fig. 1

Fabrication process of subwavelength nanostructures on the freestanding GaN slab

Fig. 2
Fig. 2

(a) and (b) the tilt-view SEM images of single-layer close-packed silica nanospheres; (c) and (d) the tilt-view SEM images of fabricated GaN nanostructures; (e) optical micrograph of nanostructures on the freestanding GaN slab.

Fig. 3
Fig. 3

(a) PL spectra of fabricated samples obtained from the top GaN surface; (b) PL spectra of fabricated samples obtained from silicon substrate side.

Fig. 4
Fig. 4

(a) Reflectivity of fabricated samples obtained from the top GaN surface; (b) Reflectivity of fabricated samples obtained from silicon substrate side.

Metrics