We propose and theoretically demonstrate that chalcogenide (As2Se3) waveguide is a more energy efficient platform for Raman amplification and lasing than silicon for optical interconnect applications. In spite of its smaller Raman gain, ultrahigh maximum conversion efficiency of 40%, seven times better than that of silicon Raman laser, is obtained. 33% lasing threshold reduction to 299mW is simultaneously observed, together with wider linear region. A figure-of-merit (FOM) factor has been established for direct comparison between As2Se3 and silicon waveguide Raman laser. It is found that As2Se3 is superior in terms of energy consumption and device miniaturization capability. Further threshold reduction to 100mW is achieved by optimizing Stokes end-facet reflectivity.
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