Abstract

It’s of significant interest to combine freestanding nanostructure with active gallium nitride (GaN) material for surface-emitting optoelectronic application. By utilizing bulk micromachining of silicon, we demonstrate here a promising way to fabricate freestanding GaN nanostructures using a GaN-on-silicon system. The well-defined nanoscale circular GaN gratings are realized by fast-atom beam (FAB) etching, and the freestanding GaN gratings are obtained by removing silicon substrate using deep reactive ion etching (DRIE). The freestanding GaN slab is thinned from the backside by FAB etching to reduce the confined modes inside the GaN slab. The measured microphotoluminescence (micro-PL) spectra experimentally demonstrate significant enhancements in peak intensity and integrated intensity by introducing freestanding circular grating. This work represents an important step in combining GaN-based active material with freestanding nanostructures for further increasing light-extraction efficiency.

© 2010 OSA

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    [CrossRef]
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    [CrossRef] [PubMed]
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    [CrossRef]
  4. S. Boutami, B. Ben Bakir, J.-L. Leclercq, X. Letartre, P. Rojo-Romeo, M. Garrigues, P. Viktorovitch, I. Sagnes, L. Legratiet, and M. Strassner, “Highly selective and compact tunable MOEMS photonic crystal Fabry-Perot filter,” Opt. Express 14(8), 3129–3137 (2006).
    [CrossRef] [PubMed]
  5. M. Arita, S. Ishida, S. Kako, S. Iwamoto, and Y. Arakawa, “AlN air-bridge photonic crystal nanocavities demonstrating high quality factor,” Appl. Phys. Lett. 91(5), 051106 (2007).
    [CrossRef]
  6. S. Noda and M. Fujita, “Light-emitting diodes: photonic crystal efficiency boost,” Nat. Photonics 3(3), 129–130 (2009).
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    [CrossRef]
  9. A. Rosenberg and K. Bussmann, “Mijin Kim, Michael W. Carter, M. A. Mastro, Ronald T. Holm, Richard L. Henry, Joshua D. Caldwell, and Charles R. Eddy, Jr., “Fabrication of GaN suspended photonic crystal slabs and resonant nanocavities on Si(111),” J. Vac. Sci. Technol. B 25(3), 721 (2007).
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  10. Y.-S. Choi, K. Hennessy, R. Sharma, E. Haberer, Y. Gao, S. P. DenBaars, S. Nakamura, E. L. Hu, and C. Meier, “GaN blue photonic crystal nanocavities,” Appl. Phys. Lett. 87(24), 243101 (2005).
    [CrossRef]
  11. C. Meier, K. Hennessy, E. D. Haberer, R. Sharma, Y.-S. Choi, K. McGroddy, S. Keller, S. P. DenBaars, S. Nakamura, and E. L. Hu, “Visible resonant modes in GaN-based photonic crystal cavities,” Appl. Phys. Lett. 88(3), 031111 (2006).
    [CrossRef]
  12. A. C. Tamboli, E. D. Haberer, R. Sharma, K. H. Lee, S. Nakamura, and E. L. Hu, “Room-temperature continuous-wave lasing in GaN/InGaN microdisks,” Nat. Photonics 1(1), 61–64 (2007).
    [CrossRef]
  13. H. Matsubara, S. Yoshimoto, H. Saito, Y. Jianglin, Y. Tanaka, and S. Noda, “GaN photonic-crystal surface-emitting laser at blue-violet wavelengths,” Science 319(5862), 445–447 (2008).
    [CrossRef]
  14. J. J. Wierer, A. David, and M. M. Megens, “III-nitride photonic-crystal light-emitting diodes with high extraction efficiency,” Nat. Photonics 3(3), 163–169 (2009).
    [CrossRef]
  15. J.-M. Bethoux, P. Vennéguès, F. Natali, E. Feltin, O. Tottereau, G. Nataf, P. De Mierry, and F. Semond, “Growth of high quality crack-free AlGaN films on GaN templates using plastic relaxation through buried cracks,” J. Appl. Phys. 94(10), 6499 (2003).
    [CrossRef]
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    [CrossRef]
  17. H. W. Choi, K. N. Hui, P. T. Lai, P. Chen, X. H. Zhang, S. Tripathy, J. H. Teng, and S. J. Chua, “Lasing in GaN microdisks pivoted on Si,” Appl. Phys. Lett. 89(21), 211101 (2006).
    [CrossRef]
  18. G. A. Turnbull, A. Carleton, A. Tahraouhi, T. F. Krauss, I. D. W. Samuel, G. F. Barlow, and K. A. Shore, “Effect of gain localization in circular-grating distributed feedback lasers,” Appl. Phys. Lett. 87(20), 201101 (2005).
    [CrossRef]
  19. Y. Chen, Z. Li, Z. Zhang, D. Psaltis, and A. Scherer, “Nanoimprinted circular grating distributed feedback dye laser,” Appl. Phys. Lett. 91(5), 051109 (2007).
    [CrossRef]
  20. X. Sun and A. Yariv, “Surface-emitting circular DFB, disk- and ring- Bragg resonator lasers with chirped gratings: a unified theory and comparative study,” Opt. Express 16(12), 9155–9164 (2008).
    [CrossRef] [PubMed]
  21. Y. Wang, Y. Kanamori, J. Ye, H. Sameshima, and K. Hane, “Fabrication and characterization of nanoscale resonant gratings on thin silicon membrane,” Opt. Express 17(7), 4938–4943 (2009).
    [CrossRef] [PubMed]
  22. Y. Wang, F. Hu, M. Wakui, and K. Hane, “Freestanding GaN resonant gratings at telecommunication range,” IEEE Photon. Technol. Lett. 21(17), 1184–1186 (2009).
    [CrossRef]
  23. Y. Wang, F. Hu, M Wakui, and K Hane, “Frestanding circular GaN grating fabricated by fast atom beam etching,” Appl. Phys., A Mater. Sci. Process. 97, 39 (2009).
    [CrossRef]
  24. T. Ono, N. Orimoto, S. Lee, T. Simizu, and M. Esashi, “RF-plasma-assisted fast atom beam etching,” Jpn. J. Appl. Phys. 39(Part 1, No. 12B), 6976–6979 (2000).
    [CrossRef]
  25. F. R. Hu, K. Ochi, Y. Zhao, and K. Hane, “High-efficiency light-emitting column-crystallized InGaN/GaN quantum-well flower structure on micropillared Si substrate,” Appl. Phys. Lett. 89(17), 171903 (2006).
    [CrossRef]
  26. F. R. Hu, Y. Kanamori, K. Ochi, Y. Zhao, M. Wakui, and K. Hane, “A 100 nm thick InGaN/GaN multiple quantum-well column-crystallized thin film deposited on Si(111) substrate and its micromachining,” Nanotechnology 19(3), 035305 (2008).
    [CrossRef] [PubMed]
  27. T.-X. Lee, C.-Y. Lin, S.-H. Ma, and C.-C. Sun, “Analysis of position-dependent light extraction of GaN-based LEDs,” Opt. Express 13(11), 4175–4179 (2005).
    [CrossRef] [PubMed]
  28. S.-K. Kim, H. K. Cho, D. K. Bae, J. S. Lee, H.-G. Park, and Y.-H. Lee, “Efficient GaN slab vertical light-emitting diode covered with a patterned high-index layer,” Appl. Phys. Lett. 92(24), 241118 (2008).
    [CrossRef]
  29. O. B. Shchekin, J. E. Epler, T. A. Trottier, T. Margalith, D. A. Steigerwald, M. O. Holcomb, P. S. Martin, and M. R. Krames, “High performance thin-film flip-chip InGaN–GaN light-emitting diodes,” Appl. Phys. Lett. 89(7), 071109 (2006).
    [CrossRef]

2009 (5)

S. Noda and M. Fujita, “Light-emitting diodes: photonic crystal efficiency boost,” Nat. Photonics 3(3), 129–130 (2009).
[CrossRef]

J. J. Wierer, A. David, and M. M. Megens, “III-nitride photonic-crystal light-emitting diodes with high extraction efficiency,” Nat. Photonics 3(3), 163–169 (2009).
[CrossRef]

Y. Wang, F. Hu, M. Wakui, and K. Hane, “Freestanding GaN resonant gratings at telecommunication range,” IEEE Photon. Technol. Lett. 21(17), 1184–1186 (2009).
[CrossRef]

Y. Wang, F. Hu, M Wakui, and K Hane, “Frestanding circular GaN grating fabricated by fast atom beam etching,” Appl. Phys., A Mater. Sci. Process. 97, 39 (2009).
[CrossRef]

Y. Wang, Y. Kanamori, J. Ye, H. Sameshima, and K. Hane, “Fabrication and characterization of nanoscale resonant gratings on thin silicon membrane,” Opt. Express 17(7), 4938–4943 (2009).
[CrossRef] [PubMed]

2008 (4)

X. Sun and A. Yariv, “Surface-emitting circular DFB, disk- and ring- Bragg resonator lasers with chirped gratings: a unified theory and comparative study,” Opt. Express 16(12), 9155–9164 (2008).
[CrossRef] [PubMed]

F. R. Hu, Y. Kanamori, K. Ochi, Y. Zhao, M. Wakui, and K. Hane, “A 100 nm thick InGaN/GaN multiple quantum-well column-crystallized thin film deposited on Si(111) substrate and its micromachining,” Nanotechnology 19(3), 035305 (2008).
[CrossRef] [PubMed]

S.-K. Kim, H. K. Cho, D. K. Bae, J. S. Lee, H.-G. Park, and Y.-H. Lee, “Efficient GaN slab vertical light-emitting diode covered with a patterned high-index layer,” Appl. Phys. Lett. 92(24), 241118 (2008).
[CrossRef]

H. Matsubara, S. Yoshimoto, H. Saito, Y. Jianglin, Y. Tanaka, and S. Noda, “GaN photonic-crystal surface-emitting laser at blue-violet wavelengths,” Science 319(5862), 445–447 (2008).
[CrossRef]

2007 (6)

A. C. Tamboli, E. D. Haberer, R. Sharma, K. H. Lee, S. Nakamura, and E. L. Hu, “Room-temperature continuous-wave lasing in GaN/InGaN microdisks,” Nat. Photonics 1(1), 61–64 (2007).
[CrossRef]

M. Arita, S. Ishida, S. Kako, S. Iwamoto, and Y. Arakawa, “AlN air-bridge photonic crystal nanocavities demonstrating high quality factor,” Appl. Phys. Lett. 91(5), 051106 (2007).
[CrossRef]

A. Rosenberg and K. Bussmann, “Mijin Kim, Michael W. Carter, M. A. Mastro, Ronald T. Holm, Richard L. Henry, Joshua D. Caldwell, and Charles R. Eddy, Jr., “Fabrication of GaN suspended photonic crystal slabs and resonant nanocavities on Si(111),” J. Vac. Sci. Technol. B 25(3), 721 (2007).
[CrossRef]

Y. Chen, Z. Li, Z. Zhang, D. Psaltis, and A. Scherer, “Nanoimprinted circular grating distributed feedback dye laser,” Appl. Phys. Lett. 91(5), 051109 (2007).
[CrossRef]

T.-X. Lee, K.-F. Gao, W.-T. Chien, and C.-C. Sun, “Light extraction analysis of GaN-based light-emitting diodes with surface texture and/or patterned substrate,” Opt. Express 15(11), 6670–6676 (2007).
[CrossRef] [PubMed]

M. R. Krames, O. B. Shchekin, R. Mueller-Mach, G. O. Mueller, L. Zhou, G. Harbers, and M. George Craford, “Status and Future of High-Power Light-Emitting Diodes for Solid-State Lighting,” J. Display Technol. 3(2), 160–175 (2007).
[CrossRef]

2006 (8)

F. R. Hu, K. Ochi, Y. Zhao, and K. Hane, “High-efficiency light-emitting column-crystallized InGaN/GaN quantum-well flower structure on micropillared Si substrate,” Appl. Phys. Lett. 89(17), 171903 (2006).
[CrossRef]

S. Boutami, B. Ben Bakir, J.-L. Leclercq, X. Letartre, P. Rojo-Romeo, M. Garrigues, P. Viktorovitch, I. Sagnes, L. Legratiet, and M. Strassner, “Highly selective and compact tunable MOEMS photonic crystal Fabry-Perot filter,” Opt. Express 14(8), 3129–3137 (2006).
[CrossRef] [PubMed]

O. B. Shchekin, J. E. Epler, T. A. Trottier, T. Margalith, D. A. Steigerwald, M. O. Holcomb, P. S. Martin, and M. R. Krames, “High performance thin-film flip-chip InGaN–GaN light-emitting diodes,” Appl. Phys. Lett. 89(7), 071109 (2006).
[CrossRef]

F. Schulze, A. Dadgar, J. Bläsing, A. Diez, and A. Krost, “Metalorganic vapor phase epitaxy grown InGaN/GaN light-emitting diodes on Si(001) substrate,” Appl. Phys. Lett. 88(12), 121114 (2006).
[CrossRef]

H. W. Choi, K. N. Hui, P. T. Lai, P. Chen, X. H. Zhang, S. Tripathy, J. H. Teng, and S. J. Chua, “Lasing in GaN microdisks pivoted on Si,” Appl. Phys. Lett. 89(21), 211101 (2006).
[CrossRef]

Z. Yang, R. N. Wang, D. Wang, B. S. Zhang, K. J. Chen, and K. M. Lau, “GaN-on-patterned-silicon (GPS) technique for fabrication of GaN-based MEMS,” Sens. Actuators A Phys. 130–131, 371–378 (2006).
[CrossRef]

Z. Yang, R. N. Wang, S. Jia, D. Wang, B. S. Zhang, K. M. Lau, and K. J. Chen, “Mechanical characterization of suspended GaN microstructures fabricated by GaN-on-patterned-silicon technique,” Appl. Phys. Lett. 88(4), 041913 (2006).
[CrossRef]

C. Meier, K. Hennessy, E. D. Haberer, R. Sharma, Y.-S. Choi, K. McGroddy, S. Keller, S. P. DenBaars, S. Nakamura, and E. L. Hu, “Visible resonant modes in GaN-based photonic crystal cavities,” Appl. Phys. Lett. 88(3), 031111 (2006).
[CrossRef]

2005 (3)

Y.-S. Choi, K. Hennessy, R. Sharma, E. Haberer, Y. Gao, S. P. DenBaars, S. Nakamura, E. L. Hu, and C. Meier, “GaN blue photonic crystal nanocavities,” Appl. Phys. Lett. 87(24), 243101 (2005).
[CrossRef]

G. A. Turnbull, A. Carleton, A. Tahraouhi, T. F. Krauss, I. D. W. Samuel, G. F. Barlow, and K. A. Shore, “Effect of gain localization in circular-grating distributed feedback lasers,” Appl. Phys. Lett. 87(20), 201101 (2005).
[CrossRef]

T.-X. Lee, C.-Y. Lin, S.-H. Ma, and C.-C. Sun, “Analysis of position-dependent light extraction of GaN-based LEDs,” Opt. Express 13(11), 4175–4179 (2005).
[CrossRef] [PubMed]

2003 (1)

J.-M. Bethoux, P. Vennéguès, F. Natali, E. Feltin, O. Tottereau, G. Nataf, P. De Mierry, and F. Semond, “Growth of high quality crack-free AlGaN films on GaN templates using plastic relaxation through buried cracks,” J. Appl. Phys. 94(10), 6499 (2003).
[CrossRef]

2001 (1)

H. Y. Ryu, Y. H. Lee, R. L. Sellin, and D. Bimberg, “Over 30-fold enhancement of light extraction from free-standing photonic crystal slabs with InGaAs quantum dots at low temperature,” Appl. Phys. Lett. 79(22), 3573 (2001).
[CrossRef]

2000 (1)

T. Ono, N. Orimoto, S. Lee, T. Simizu, and M. Esashi, “RF-plasma-assisted fast atom beam etching,” Jpn. J. Appl. Phys. 39(Part 1, No. 12B), 6976–6979 (2000).
[CrossRef]

Arakawa, Y.

M. Arita, S. Ishida, S. Kako, S. Iwamoto, and Y. Arakawa, “AlN air-bridge photonic crystal nanocavities demonstrating high quality factor,” Appl. Phys. Lett. 91(5), 051106 (2007).
[CrossRef]

Arita, M.

M. Arita, S. Ishida, S. Kako, S. Iwamoto, and Y. Arakawa, “AlN air-bridge photonic crystal nanocavities demonstrating high quality factor,” Appl. Phys. Lett. 91(5), 051106 (2007).
[CrossRef]

Bae, D. K.

S.-K. Kim, H. K. Cho, D. K. Bae, J. S. Lee, H.-G. Park, and Y.-H. Lee, “Efficient GaN slab vertical light-emitting diode covered with a patterned high-index layer,” Appl. Phys. Lett. 92(24), 241118 (2008).
[CrossRef]

Barlow, G. F.

G. A. Turnbull, A. Carleton, A. Tahraouhi, T. F. Krauss, I. D. W. Samuel, G. F. Barlow, and K. A. Shore, “Effect of gain localization in circular-grating distributed feedback lasers,” Appl. Phys. Lett. 87(20), 201101 (2005).
[CrossRef]

Ben Bakir, B.

Bethoux, J.-M.

J.-M. Bethoux, P. Vennéguès, F. Natali, E. Feltin, O. Tottereau, G. Nataf, P. De Mierry, and F. Semond, “Growth of high quality crack-free AlGaN films on GaN templates using plastic relaxation through buried cracks,” J. Appl. Phys. 94(10), 6499 (2003).
[CrossRef]

Bimberg, D.

H. Y. Ryu, Y. H. Lee, R. L. Sellin, and D. Bimberg, “Over 30-fold enhancement of light extraction from free-standing photonic crystal slabs with InGaAs quantum dots at low temperature,” Appl. Phys. Lett. 79(22), 3573 (2001).
[CrossRef]

Bläsing, J.

F. Schulze, A. Dadgar, J. Bläsing, A. Diez, and A. Krost, “Metalorganic vapor phase epitaxy grown InGaN/GaN light-emitting diodes on Si(001) substrate,” Appl. Phys. Lett. 88(12), 121114 (2006).
[CrossRef]

Boutami, S.

Bussmann, K.

A. Rosenberg and K. Bussmann, “Mijin Kim, Michael W. Carter, M. A. Mastro, Ronald T. Holm, Richard L. Henry, Joshua D. Caldwell, and Charles R. Eddy, Jr., “Fabrication of GaN suspended photonic crystal slabs and resonant nanocavities on Si(111),” J. Vac. Sci. Technol. B 25(3), 721 (2007).
[CrossRef]

Carleton, A.

G. A. Turnbull, A. Carleton, A. Tahraouhi, T. F. Krauss, I. D. W. Samuel, G. F. Barlow, and K. A. Shore, “Effect of gain localization in circular-grating distributed feedback lasers,” Appl. Phys. Lett. 87(20), 201101 (2005).
[CrossRef]

Chen, K. J.

Z. Yang, R. N. Wang, S. Jia, D. Wang, B. S. Zhang, K. M. Lau, and K. J. Chen, “Mechanical characterization of suspended GaN microstructures fabricated by GaN-on-patterned-silicon technique,” Appl. Phys. Lett. 88(4), 041913 (2006).
[CrossRef]

Z. Yang, R. N. Wang, D. Wang, B. S. Zhang, K. J. Chen, and K. M. Lau, “GaN-on-patterned-silicon (GPS) technique for fabrication of GaN-based MEMS,” Sens. Actuators A Phys. 130–131, 371–378 (2006).
[CrossRef]

Chen, P.

H. W. Choi, K. N. Hui, P. T. Lai, P. Chen, X. H. Zhang, S. Tripathy, J. H. Teng, and S. J. Chua, “Lasing in GaN microdisks pivoted on Si,” Appl. Phys. Lett. 89(21), 211101 (2006).
[CrossRef]

Chen, Y.

Y. Chen, Z. Li, Z. Zhang, D. Psaltis, and A. Scherer, “Nanoimprinted circular grating distributed feedback dye laser,” Appl. Phys. Lett. 91(5), 051109 (2007).
[CrossRef]

Chien, W.-T.

Cho, H. K.

S.-K. Kim, H. K. Cho, D. K. Bae, J. S. Lee, H.-G. Park, and Y.-H. Lee, “Efficient GaN slab vertical light-emitting diode covered with a patterned high-index layer,” Appl. Phys. Lett. 92(24), 241118 (2008).
[CrossRef]

Choi, H. W.

H. W. Choi, K. N. Hui, P. T. Lai, P. Chen, X. H. Zhang, S. Tripathy, J. H. Teng, and S. J. Chua, “Lasing in GaN microdisks pivoted on Si,” Appl. Phys. Lett. 89(21), 211101 (2006).
[CrossRef]

Choi, Y.-S.

C. Meier, K. Hennessy, E. D. Haberer, R. Sharma, Y.-S. Choi, K. McGroddy, S. Keller, S. P. DenBaars, S. Nakamura, and E. L. Hu, “Visible resonant modes in GaN-based photonic crystal cavities,” Appl. Phys. Lett. 88(3), 031111 (2006).
[CrossRef]

Y.-S. Choi, K. Hennessy, R. Sharma, E. Haberer, Y. Gao, S. P. DenBaars, S. Nakamura, E. L. Hu, and C. Meier, “GaN blue photonic crystal nanocavities,” Appl. Phys. Lett. 87(24), 243101 (2005).
[CrossRef]

Chua, S. J.

H. W. Choi, K. N. Hui, P. T. Lai, P. Chen, X. H. Zhang, S. Tripathy, J. H. Teng, and S. J. Chua, “Lasing in GaN microdisks pivoted on Si,” Appl. Phys. Lett. 89(21), 211101 (2006).
[CrossRef]

Dadgar, A.

F. Schulze, A. Dadgar, J. Bläsing, A. Diez, and A. Krost, “Metalorganic vapor phase epitaxy grown InGaN/GaN light-emitting diodes on Si(001) substrate,” Appl. Phys. Lett. 88(12), 121114 (2006).
[CrossRef]

David, A.

J. J. Wierer, A. David, and M. M. Megens, “III-nitride photonic-crystal light-emitting diodes with high extraction efficiency,” Nat. Photonics 3(3), 163–169 (2009).
[CrossRef]

De Mierry, P.

J.-M. Bethoux, P. Vennéguès, F. Natali, E. Feltin, O. Tottereau, G. Nataf, P. De Mierry, and F. Semond, “Growth of high quality crack-free AlGaN films on GaN templates using plastic relaxation through buried cracks,” J. Appl. Phys. 94(10), 6499 (2003).
[CrossRef]

DenBaars, S. P.

C. Meier, K. Hennessy, E. D. Haberer, R. Sharma, Y.-S. Choi, K. McGroddy, S. Keller, S. P. DenBaars, S. Nakamura, and E. L. Hu, “Visible resonant modes in GaN-based photonic crystal cavities,” Appl. Phys. Lett. 88(3), 031111 (2006).
[CrossRef]

Y.-S. Choi, K. Hennessy, R. Sharma, E. Haberer, Y. Gao, S. P. DenBaars, S. Nakamura, E. L. Hu, and C. Meier, “GaN blue photonic crystal nanocavities,” Appl. Phys. Lett. 87(24), 243101 (2005).
[CrossRef]

Diez, A.

F. Schulze, A. Dadgar, J. Bläsing, A. Diez, and A. Krost, “Metalorganic vapor phase epitaxy grown InGaN/GaN light-emitting diodes on Si(001) substrate,” Appl. Phys. Lett. 88(12), 121114 (2006).
[CrossRef]

Epler, J. E.

O. B. Shchekin, J. E. Epler, T. A. Trottier, T. Margalith, D. A. Steigerwald, M. O. Holcomb, P. S. Martin, and M. R. Krames, “High performance thin-film flip-chip InGaN–GaN light-emitting diodes,” Appl. Phys. Lett. 89(7), 071109 (2006).
[CrossRef]

Esashi, M.

T. Ono, N. Orimoto, S. Lee, T. Simizu, and M. Esashi, “RF-plasma-assisted fast atom beam etching,” Jpn. J. Appl. Phys. 39(Part 1, No. 12B), 6976–6979 (2000).
[CrossRef]

Feltin, E.

J.-M. Bethoux, P. Vennéguès, F. Natali, E. Feltin, O. Tottereau, G. Nataf, P. De Mierry, and F. Semond, “Growth of high quality crack-free AlGaN films on GaN templates using plastic relaxation through buried cracks,” J. Appl. Phys. 94(10), 6499 (2003).
[CrossRef]

Fujita, M.

S. Noda and M. Fujita, “Light-emitting diodes: photonic crystal efficiency boost,” Nat. Photonics 3(3), 129–130 (2009).
[CrossRef]

Gao, K.-F.

Gao, Y.

Y.-S. Choi, K. Hennessy, R. Sharma, E. Haberer, Y. Gao, S. P. DenBaars, S. Nakamura, E. L. Hu, and C. Meier, “GaN blue photonic crystal nanocavities,” Appl. Phys. Lett. 87(24), 243101 (2005).
[CrossRef]

Garrigues, M.

George Craford, M.

Haberer, E.

Y.-S. Choi, K. Hennessy, R. Sharma, E. Haberer, Y. Gao, S. P. DenBaars, S. Nakamura, E. L. Hu, and C. Meier, “GaN blue photonic crystal nanocavities,” Appl. Phys. Lett. 87(24), 243101 (2005).
[CrossRef]

Haberer, E. D.

A. C. Tamboli, E. D. Haberer, R. Sharma, K. H. Lee, S. Nakamura, and E. L. Hu, “Room-temperature continuous-wave lasing in GaN/InGaN microdisks,” Nat. Photonics 1(1), 61–64 (2007).
[CrossRef]

C. Meier, K. Hennessy, E. D. Haberer, R. Sharma, Y.-S. Choi, K. McGroddy, S. Keller, S. P. DenBaars, S. Nakamura, and E. L. Hu, “Visible resonant modes in GaN-based photonic crystal cavities,” Appl. Phys. Lett. 88(3), 031111 (2006).
[CrossRef]

Hane, K

Y. Wang, F. Hu, M Wakui, and K Hane, “Frestanding circular GaN grating fabricated by fast atom beam etching,” Appl. Phys., A Mater. Sci. Process. 97, 39 (2009).
[CrossRef]

Hane, K.

Y. Wang, Y. Kanamori, J. Ye, H. Sameshima, and K. Hane, “Fabrication and characterization of nanoscale resonant gratings on thin silicon membrane,” Opt. Express 17(7), 4938–4943 (2009).
[CrossRef] [PubMed]

Y. Wang, F. Hu, M. Wakui, and K. Hane, “Freestanding GaN resonant gratings at telecommunication range,” IEEE Photon. Technol. Lett. 21(17), 1184–1186 (2009).
[CrossRef]

F. R. Hu, Y. Kanamori, K. Ochi, Y. Zhao, M. Wakui, and K. Hane, “A 100 nm thick InGaN/GaN multiple quantum-well column-crystallized thin film deposited on Si(111) substrate and its micromachining,” Nanotechnology 19(3), 035305 (2008).
[CrossRef] [PubMed]

F. R. Hu, K. Ochi, Y. Zhao, and K. Hane, “High-efficiency light-emitting column-crystallized InGaN/GaN quantum-well flower structure on micropillared Si substrate,” Appl. Phys. Lett. 89(17), 171903 (2006).
[CrossRef]

Harbers, G.

Hennessy, K.

C. Meier, K. Hennessy, E. D. Haberer, R. Sharma, Y.-S. Choi, K. McGroddy, S. Keller, S. P. DenBaars, S. Nakamura, and E. L. Hu, “Visible resonant modes in GaN-based photonic crystal cavities,” Appl. Phys. Lett. 88(3), 031111 (2006).
[CrossRef]

Y.-S. Choi, K. Hennessy, R. Sharma, E. Haberer, Y. Gao, S. P. DenBaars, S. Nakamura, E. L. Hu, and C. Meier, “GaN blue photonic crystal nanocavities,” Appl. Phys. Lett. 87(24), 243101 (2005).
[CrossRef]

Holcomb, M. O.

O. B. Shchekin, J. E. Epler, T. A. Trottier, T. Margalith, D. A. Steigerwald, M. O. Holcomb, P. S. Martin, and M. R. Krames, “High performance thin-film flip-chip InGaN–GaN light-emitting diodes,” Appl. Phys. Lett. 89(7), 071109 (2006).
[CrossRef]

Hu, E. L.

A. C. Tamboli, E. D. Haberer, R. Sharma, K. H. Lee, S. Nakamura, and E. L. Hu, “Room-temperature continuous-wave lasing in GaN/InGaN microdisks,” Nat. Photonics 1(1), 61–64 (2007).
[CrossRef]

C. Meier, K. Hennessy, E. D. Haberer, R. Sharma, Y.-S. Choi, K. McGroddy, S. Keller, S. P. DenBaars, S. Nakamura, and E. L. Hu, “Visible resonant modes in GaN-based photonic crystal cavities,” Appl. Phys. Lett. 88(3), 031111 (2006).
[CrossRef]

Y.-S. Choi, K. Hennessy, R. Sharma, E. Haberer, Y. Gao, S. P. DenBaars, S. Nakamura, E. L. Hu, and C. Meier, “GaN blue photonic crystal nanocavities,” Appl. Phys. Lett. 87(24), 243101 (2005).
[CrossRef]

Hu, F.

Y. Wang, F. Hu, M Wakui, and K Hane, “Frestanding circular GaN grating fabricated by fast atom beam etching,” Appl. Phys., A Mater. Sci. Process. 97, 39 (2009).
[CrossRef]

Y. Wang, F. Hu, M. Wakui, and K. Hane, “Freestanding GaN resonant gratings at telecommunication range,” IEEE Photon. Technol. Lett. 21(17), 1184–1186 (2009).
[CrossRef]

Hu, F. R.

F. R. Hu, Y. Kanamori, K. Ochi, Y. Zhao, M. Wakui, and K. Hane, “A 100 nm thick InGaN/GaN multiple quantum-well column-crystallized thin film deposited on Si(111) substrate and its micromachining,” Nanotechnology 19(3), 035305 (2008).
[CrossRef] [PubMed]

F. R. Hu, K. Ochi, Y. Zhao, and K. Hane, “High-efficiency light-emitting column-crystallized InGaN/GaN quantum-well flower structure on micropillared Si substrate,” Appl. Phys. Lett. 89(17), 171903 (2006).
[CrossRef]

Hui, K. N.

H. W. Choi, K. N. Hui, P. T. Lai, P. Chen, X. H. Zhang, S. Tripathy, J. H. Teng, and S. J. Chua, “Lasing in GaN microdisks pivoted on Si,” Appl. Phys. Lett. 89(21), 211101 (2006).
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M. Arita, S. Ishida, S. Kako, S. Iwamoto, and Y. Arakawa, “AlN air-bridge photonic crystal nanocavities demonstrating high quality factor,” Appl. Phys. Lett. 91(5), 051106 (2007).
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M. Arita, S. Ishida, S. Kako, S. Iwamoto, and Y. Arakawa, “AlN air-bridge photonic crystal nanocavities demonstrating high quality factor,” Appl. Phys. Lett. 91(5), 051106 (2007).
[CrossRef]

Jia, S.

Z. Yang, R. N. Wang, S. Jia, D. Wang, B. S. Zhang, K. M. Lau, and K. J. Chen, “Mechanical characterization of suspended GaN microstructures fabricated by GaN-on-patterned-silicon technique,” Appl. Phys. Lett. 88(4), 041913 (2006).
[CrossRef]

Jianglin, Y.

H. Matsubara, S. Yoshimoto, H. Saito, Y. Jianglin, Y. Tanaka, and S. Noda, “GaN photonic-crystal surface-emitting laser at blue-violet wavelengths,” Science 319(5862), 445–447 (2008).
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Kako, S.

M. Arita, S. Ishida, S. Kako, S. Iwamoto, and Y. Arakawa, “AlN air-bridge photonic crystal nanocavities demonstrating high quality factor,” Appl. Phys. Lett. 91(5), 051106 (2007).
[CrossRef]

Kanamori, Y.

Y. Wang, Y. Kanamori, J. Ye, H. Sameshima, and K. Hane, “Fabrication and characterization of nanoscale resonant gratings on thin silicon membrane,” Opt. Express 17(7), 4938–4943 (2009).
[CrossRef] [PubMed]

F. R. Hu, Y. Kanamori, K. Ochi, Y. Zhao, M. Wakui, and K. Hane, “A 100 nm thick InGaN/GaN multiple quantum-well column-crystallized thin film deposited on Si(111) substrate and its micromachining,” Nanotechnology 19(3), 035305 (2008).
[CrossRef] [PubMed]

Keller, S.

C. Meier, K. Hennessy, E. D. Haberer, R. Sharma, Y.-S. Choi, K. McGroddy, S. Keller, S. P. DenBaars, S. Nakamura, and E. L. Hu, “Visible resonant modes in GaN-based photonic crystal cavities,” Appl. Phys. Lett. 88(3), 031111 (2006).
[CrossRef]

Kim, S.-K.

S.-K. Kim, H. K. Cho, D. K. Bae, J. S. Lee, H.-G. Park, and Y.-H. Lee, “Efficient GaN slab vertical light-emitting diode covered with a patterned high-index layer,” Appl. Phys. Lett. 92(24), 241118 (2008).
[CrossRef]

Krames, M. R.

M. R. Krames, O. B. Shchekin, R. Mueller-Mach, G. O. Mueller, L. Zhou, G. Harbers, and M. George Craford, “Status and Future of High-Power Light-Emitting Diodes for Solid-State Lighting,” J. Display Technol. 3(2), 160–175 (2007).
[CrossRef]

O. B. Shchekin, J. E. Epler, T. A. Trottier, T. Margalith, D. A. Steigerwald, M. O. Holcomb, P. S. Martin, and M. R. Krames, “High performance thin-film flip-chip InGaN–GaN light-emitting diodes,” Appl. Phys. Lett. 89(7), 071109 (2006).
[CrossRef]

Krauss, T. F.

G. A. Turnbull, A. Carleton, A. Tahraouhi, T. F. Krauss, I. D. W. Samuel, G. F. Barlow, and K. A. Shore, “Effect of gain localization in circular-grating distributed feedback lasers,” Appl. Phys. Lett. 87(20), 201101 (2005).
[CrossRef]

Krost, A.

F. Schulze, A. Dadgar, J. Bläsing, A. Diez, and A. Krost, “Metalorganic vapor phase epitaxy grown InGaN/GaN light-emitting diodes on Si(001) substrate,” Appl. Phys. Lett. 88(12), 121114 (2006).
[CrossRef]

Lai, P. T.

H. W. Choi, K. N. Hui, P. T. Lai, P. Chen, X. H. Zhang, S. Tripathy, J. H. Teng, and S. J. Chua, “Lasing in GaN microdisks pivoted on Si,” Appl. Phys. Lett. 89(21), 211101 (2006).
[CrossRef]

Lau, K. M.

Z. Yang, R. N. Wang, D. Wang, B. S. Zhang, K. J. Chen, and K. M. Lau, “GaN-on-patterned-silicon (GPS) technique for fabrication of GaN-based MEMS,” Sens. Actuators A Phys. 130–131, 371–378 (2006).
[CrossRef]

Z. Yang, R. N. Wang, S. Jia, D. Wang, B. S. Zhang, K. M. Lau, and K. J. Chen, “Mechanical characterization of suspended GaN microstructures fabricated by GaN-on-patterned-silicon technique,” Appl. Phys. Lett. 88(4), 041913 (2006).
[CrossRef]

Leclercq, J.-L.

Lee, J. S.

S.-K. Kim, H. K. Cho, D. K. Bae, J. S. Lee, H.-G. Park, and Y.-H. Lee, “Efficient GaN slab vertical light-emitting diode covered with a patterned high-index layer,” Appl. Phys. Lett. 92(24), 241118 (2008).
[CrossRef]

Lee, K. H.

A. C. Tamboli, E. D. Haberer, R. Sharma, K. H. Lee, S. Nakamura, and E. L. Hu, “Room-temperature continuous-wave lasing in GaN/InGaN microdisks,” Nat. Photonics 1(1), 61–64 (2007).
[CrossRef]

Lee, S.

T. Ono, N. Orimoto, S. Lee, T. Simizu, and M. Esashi, “RF-plasma-assisted fast atom beam etching,” Jpn. J. Appl. Phys. 39(Part 1, No. 12B), 6976–6979 (2000).
[CrossRef]

Lee, T.-X.

Lee, Y. H.

H. Y. Ryu, Y. H. Lee, R. L. Sellin, and D. Bimberg, “Over 30-fold enhancement of light extraction from free-standing photonic crystal slabs with InGaAs quantum dots at low temperature,” Appl. Phys. Lett. 79(22), 3573 (2001).
[CrossRef]

Lee, Y.-H.

S.-K. Kim, H. K. Cho, D. K. Bae, J. S. Lee, H.-G. Park, and Y.-H. Lee, “Efficient GaN slab vertical light-emitting diode covered with a patterned high-index layer,” Appl. Phys. Lett. 92(24), 241118 (2008).
[CrossRef]

Legratiet, L.

Letartre, X.

Li, Z.

Y. Chen, Z. Li, Z. Zhang, D. Psaltis, and A. Scherer, “Nanoimprinted circular grating distributed feedback dye laser,” Appl. Phys. Lett. 91(5), 051109 (2007).
[CrossRef]

Lin, C.-Y.

Ma, S.-H.

Margalith, T.

O. B. Shchekin, J. E. Epler, T. A. Trottier, T. Margalith, D. A. Steigerwald, M. O. Holcomb, P. S. Martin, and M. R. Krames, “High performance thin-film flip-chip InGaN–GaN light-emitting diodes,” Appl. Phys. Lett. 89(7), 071109 (2006).
[CrossRef]

Martin, P. S.

O. B. Shchekin, J. E. Epler, T. A. Trottier, T. Margalith, D. A. Steigerwald, M. O. Holcomb, P. S. Martin, and M. R. Krames, “High performance thin-film flip-chip InGaN–GaN light-emitting diodes,” Appl. Phys. Lett. 89(7), 071109 (2006).
[CrossRef]

Matsubara, H.

H. Matsubara, S. Yoshimoto, H. Saito, Y. Jianglin, Y. Tanaka, and S. Noda, “GaN photonic-crystal surface-emitting laser at blue-violet wavelengths,” Science 319(5862), 445–447 (2008).
[CrossRef]

McGroddy, K.

C. Meier, K. Hennessy, E. D. Haberer, R. Sharma, Y.-S. Choi, K. McGroddy, S. Keller, S. P. DenBaars, S. Nakamura, and E. L. Hu, “Visible resonant modes in GaN-based photonic crystal cavities,” Appl. Phys. Lett. 88(3), 031111 (2006).
[CrossRef]

Megens, M. M.

J. J. Wierer, A. David, and M. M. Megens, “III-nitride photonic-crystal light-emitting diodes with high extraction efficiency,” Nat. Photonics 3(3), 163–169 (2009).
[CrossRef]

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C. Meier, K. Hennessy, E. D. Haberer, R. Sharma, Y.-S. Choi, K. McGroddy, S. Keller, S. P. DenBaars, S. Nakamura, and E. L. Hu, “Visible resonant modes in GaN-based photonic crystal cavities,” Appl. Phys. Lett. 88(3), 031111 (2006).
[CrossRef]

Y.-S. Choi, K. Hennessy, R. Sharma, E. Haberer, Y. Gao, S. P. DenBaars, S. Nakamura, E. L. Hu, and C. Meier, “GaN blue photonic crystal nanocavities,” Appl. Phys. Lett. 87(24), 243101 (2005).
[CrossRef]

Mueller, G. O.

Mueller-Mach, R.

Nakamura, S.

A. C. Tamboli, E. D. Haberer, R. Sharma, K. H. Lee, S. Nakamura, and E. L. Hu, “Room-temperature continuous-wave lasing in GaN/InGaN microdisks,” Nat. Photonics 1(1), 61–64 (2007).
[CrossRef]

C. Meier, K. Hennessy, E. D. Haberer, R. Sharma, Y.-S. Choi, K. McGroddy, S. Keller, S. P. DenBaars, S. Nakamura, and E. L. Hu, “Visible resonant modes in GaN-based photonic crystal cavities,” Appl. Phys. Lett. 88(3), 031111 (2006).
[CrossRef]

Y.-S. Choi, K. Hennessy, R. Sharma, E. Haberer, Y. Gao, S. P. DenBaars, S. Nakamura, E. L. Hu, and C. Meier, “GaN blue photonic crystal nanocavities,” Appl. Phys. Lett. 87(24), 243101 (2005).
[CrossRef]

Nataf, G.

J.-M. Bethoux, P. Vennéguès, F. Natali, E. Feltin, O. Tottereau, G. Nataf, P. De Mierry, and F. Semond, “Growth of high quality crack-free AlGaN films on GaN templates using plastic relaxation through buried cracks,” J. Appl. Phys. 94(10), 6499 (2003).
[CrossRef]

Natali, F.

J.-M. Bethoux, P. Vennéguès, F. Natali, E. Feltin, O. Tottereau, G. Nataf, P. De Mierry, and F. Semond, “Growth of high quality crack-free AlGaN films on GaN templates using plastic relaxation through buried cracks,” J. Appl. Phys. 94(10), 6499 (2003).
[CrossRef]

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S. Noda and M. Fujita, “Light-emitting diodes: photonic crystal efficiency boost,” Nat. Photonics 3(3), 129–130 (2009).
[CrossRef]

H. Matsubara, S. Yoshimoto, H. Saito, Y. Jianglin, Y. Tanaka, and S. Noda, “GaN photonic-crystal surface-emitting laser at blue-violet wavelengths,” Science 319(5862), 445–447 (2008).
[CrossRef]

Ochi, K.

F. R. Hu, Y. Kanamori, K. Ochi, Y. Zhao, M. Wakui, and K. Hane, “A 100 nm thick InGaN/GaN multiple quantum-well column-crystallized thin film deposited on Si(111) substrate and its micromachining,” Nanotechnology 19(3), 035305 (2008).
[CrossRef] [PubMed]

F. R. Hu, K. Ochi, Y. Zhao, and K. Hane, “High-efficiency light-emitting column-crystallized InGaN/GaN quantum-well flower structure on micropillared Si substrate,” Appl. Phys. Lett. 89(17), 171903 (2006).
[CrossRef]

Ono, T.

T. Ono, N. Orimoto, S. Lee, T. Simizu, and M. Esashi, “RF-plasma-assisted fast atom beam etching,” Jpn. J. Appl. Phys. 39(Part 1, No. 12B), 6976–6979 (2000).
[CrossRef]

Orimoto, N.

T. Ono, N. Orimoto, S. Lee, T. Simizu, and M. Esashi, “RF-plasma-assisted fast atom beam etching,” Jpn. J. Appl. Phys. 39(Part 1, No. 12B), 6976–6979 (2000).
[CrossRef]

Park, H.-G.

S.-K. Kim, H. K. Cho, D. K. Bae, J. S. Lee, H.-G. Park, and Y.-H. Lee, “Efficient GaN slab vertical light-emitting diode covered with a patterned high-index layer,” Appl. Phys. Lett. 92(24), 241118 (2008).
[CrossRef]

Psaltis, D.

Y. Chen, Z. Li, Z. Zhang, D. Psaltis, and A. Scherer, “Nanoimprinted circular grating distributed feedback dye laser,” Appl. Phys. Lett. 91(5), 051109 (2007).
[CrossRef]

Rojo-Romeo, P.

Rosenberg, A.

A. Rosenberg and K. Bussmann, “Mijin Kim, Michael W. Carter, M. A. Mastro, Ronald T. Holm, Richard L. Henry, Joshua D. Caldwell, and Charles R. Eddy, Jr., “Fabrication of GaN suspended photonic crystal slabs and resonant nanocavities on Si(111),” J. Vac. Sci. Technol. B 25(3), 721 (2007).
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H. Y. Ryu, Y. H. Lee, R. L. Sellin, and D. Bimberg, “Over 30-fold enhancement of light extraction from free-standing photonic crystal slabs with InGaAs quantum dots at low temperature,” Appl. Phys. Lett. 79(22), 3573 (2001).
[CrossRef]

Sagnes, I.

Saito, H.

H. Matsubara, S. Yoshimoto, H. Saito, Y. Jianglin, Y. Tanaka, and S. Noda, “GaN photonic-crystal surface-emitting laser at blue-violet wavelengths,” Science 319(5862), 445–447 (2008).
[CrossRef]

Sameshima, H.

Samuel, I. D. W.

G. A. Turnbull, A. Carleton, A. Tahraouhi, T. F. Krauss, I. D. W. Samuel, G. F. Barlow, and K. A. Shore, “Effect of gain localization in circular-grating distributed feedback lasers,” Appl. Phys. Lett. 87(20), 201101 (2005).
[CrossRef]

Scherer, A.

Y. Chen, Z. Li, Z. Zhang, D. Psaltis, and A. Scherer, “Nanoimprinted circular grating distributed feedback dye laser,” Appl. Phys. Lett. 91(5), 051109 (2007).
[CrossRef]

Schulze, F.

F. Schulze, A. Dadgar, J. Bläsing, A. Diez, and A. Krost, “Metalorganic vapor phase epitaxy grown InGaN/GaN light-emitting diodes on Si(001) substrate,” Appl. Phys. Lett. 88(12), 121114 (2006).
[CrossRef]

Sellin, R. L.

H. Y. Ryu, Y. H. Lee, R. L. Sellin, and D. Bimberg, “Over 30-fold enhancement of light extraction from free-standing photonic crystal slabs with InGaAs quantum dots at low temperature,” Appl. Phys. Lett. 79(22), 3573 (2001).
[CrossRef]

Semond, F.

J.-M. Bethoux, P. Vennéguès, F. Natali, E. Feltin, O. Tottereau, G. Nataf, P. De Mierry, and F. Semond, “Growth of high quality crack-free AlGaN films on GaN templates using plastic relaxation through buried cracks,” J. Appl. Phys. 94(10), 6499 (2003).
[CrossRef]

Sharma, R.

A. C. Tamboli, E. D. Haberer, R. Sharma, K. H. Lee, S. Nakamura, and E. L. Hu, “Room-temperature continuous-wave lasing in GaN/InGaN microdisks,” Nat. Photonics 1(1), 61–64 (2007).
[CrossRef]

C. Meier, K. Hennessy, E. D. Haberer, R. Sharma, Y.-S. Choi, K. McGroddy, S. Keller, S. P. DenBaars, S. Nakamura, and E. L. Hu, “Visible resonant modes in GaN-based photonic crystal cavities,” Appl. Phys. Lett. 88(3), 031111 (2006).
[CrossRef]

Y.-S. Choi, K. Hennessy, R. Sharma, E. Haberer, Y. Gao, S. P. DenBaars, S. Nakamura, E. L. Hu, and C. Meier, “GaN blue photonic crystal nanocavities,” Appl. Phys. Lett. 87(24), 243101 (2005).
[CrossRef]

Shchekin, O. B.

M. R. Krames, O. B. Shchekin, R. Mueller-Mach, G. O. Mueller, L. Zhou, G. Harbers, and M. George Craford, “Status and Future of High-Power Light-Emitting Diodes for Solid-State Lighting,” J. Display Technol. 3(2), 160–175 (2007).
[CrossRef]

O. B. Shchekin, J. E. Epler, T. A. Trottier, T. Margalith, D. A. Steigerwald, M. O. Holcomb, P. S. Martin, and M. R. Krames, “High performance thin-film flip-chip InGaN–GaN light-emitting diodes,” Appl. Phys. Lett. 89(7), 071109 (2006).
[CrossRef]

Shore, K. A.

G. A. Turnbull, A. Carleton, A. Tahraouhi, T. F. Krauss, I. D. W. Samuel, G. F. Barlow, and K. A. Shore, “Effect of gain localization in circular-grating distributed feedback lasers,” Appl. Phys. Lett. 87(20), 201101 (2005).
[CrossRef]

Simizu, T.

T. Ono, N. Orimoto, S. Lee, T. Simizu, and M. Esashi, “RF-plasma-assisted fast atom beam etching,” Jpn. J. Appl. Phys. 39(Part 1, No. 12B), 6976–6979 (2000).
[CrossRef]

Steigerwald, D. A.

O. B. Shchekin, J. E. Epler, T. A. Trottier, T. Margalith, D. A. Steigerwald, M. O. Holcomb, P. S. Martin, and M. R. Krames, “High performance thin-film flip-chip InGaN–GaN light-emitting diodes,” Appl. Phys. Lett. 89(7), 071109 (2006).
[CrossRef]

Strassner, M.

Sun, C.-C.

Sun, X.

Tahraouhi, A.

G. A. Turnbull, A. Carleton, A. Tahraouhi, T. F. Krauss, I. D. W. Samuel, G. F. Barlow, and K. A. Shore, “Effect of gain localization in circular-grating distributed feedback lasers,” Appl. Phys. Lett. 87(20), 201101 (2005).
[CrossRef]

Tamboli, A. C.

A. C. Tamboli, E. D. Haberer, R. Sharma, K. H. Lee, S. Nakamura, and E. L. Hu, “Room-temperature continuous-wave lasing in GaN/InGaN microdisks,” Nat. Photonics 1(1), 61–64 (2007).
[CrossRef]

Tanaka, Y.

H. Matsubara, S. Yoshimoto, H. Saito, Y. Jianglin, Y. Tanaka, and S. Noda, “GaN photonic-crystal surface-emitting laser at blue-violet wavelengths,” Science 319(5862), 445–447 (2008).
[CrossRef]

Teng, J. H.

H. W. Choi, K. N. Hui, P. T. Lai, P. Chen, X. H. Zhang, S. Tripathy, J. H. Teng, and S. J. Chua, “Lasing in GaN microdisks pivoted on Si,” Appl. Phys. Lett. 89(21), 211101 (2006).
[CrossRef]

Tottereau, O.

J.-M. Bethoux, P. Vennéguès, F. Natali, E. Feltin, O. Tottereau, G. Nataf, P. De Mierry, and F. Semond, “Growth of high quality crack-free AlGaN films on GaN templates using plastic relaxation through buried cracks,” J. Appl. Phys. 94(10), 6499 (2003).
[CrossRef]

Tripathy, S.

H. W. Choi, K. N. Hui, P. T. Lai, P. Chen, X. H. Zhang, S. Tripathy, J. H. Teng, and S. J. Chua, “Lasing in GaN microdisks pivoted on Si,” Appl. Phys. Lett. 89(21), 211101 (2006).
[CrossRef]

Trottier, T. A.

O. B. Shchekin, J. E. Epler, T. A. Trottier, T. Margalith, D. A. Steigerwald, M. O. Holcomb, P. S. Martin, and M. R. Krames, “High performance thin-film flip-chip InGaN–GaN light-emitting diodes,” Appl. Phys. Lett. 89(7), 071109 (2006).
[CrossRef]

Turnbull, G. A.

G. A. Turnbull, A. Carleton, A. Tahraouhi, T. F. Krauss, I. D. W. Samuel, G. F. Barlow, and K. A. Shore, “Effect of gain localization in circular-grating distributed feedback lasers,” Appl. Phys. Lett. 87(20), 201101 (2005).
[CrossRef]

Vennéguès, P.

J.-M. Bethoux, P. Vennéguès, F. Natali, E. Feltin, O. Tottereau, G. Nataf, P. De Mierry, and F. Semond, “Growth of high quality crack-free AlGaN films on GaN templates using plastic relaxation through buried cracks,” J. Appl. Phys. 94(10), 6499 (2003).
[CrossRef]

Viktorovitch, P.

Wakui, M

Y. Wang, F. Hu, M Wakui, and K Hane, “Frestanding circular GaN grating fabricated by fast atom beam etching,” Appl. Phys., A Mater. Sci. Process. 97, 39 (2009).
[CrossRef]

Wakui, M.

Y. Wang, F. Hu, M. Wakui, and K. Hane, “Freestanding GaN resonant gratings at telecommunication range,” IEEE Photon. Technol. Lett. 21(17), 1184–1186 (2009).
[CrossRef]

F. R. Hu, Y. Kanamori, K. Ochi, Y. Zhao, M. Wakui, and K. Hane, “A 100 nm thick InGaN/GaN multiple quantum-well column-crystallized thin film deposited on Si(111) substrate and its micromachining,” Nanotechnology 19(3), 035305 (2008).
[CrossRef] [PubMed]

Wang, D.

Z. Yang, R. N. Wang, D. Wang, B. S. Zhang, K. J. Chen, and K. M. Lau, “GaN-on-patterned-silicon (GPS) technique for fabrication of GaN-based MEMS,” Sens. Actuators A Phys. 130–131, 371–378 (2006).
[CrossRef]

Z. Yang, R. N. Wang, S. Jia, D. Wang, B. S. Zhang, K. M. Lau, and K. J. Chen, “Mechanical characterization of suspended GaN microstructures fabricated by GaN-on-patterned-silicon technique,” Appl. Phys. Lett. 88(4), 041913 (2006).
[CrossRef]

Wang, R. N.

Z. Yang, R. N. Wang, D. Wang, B. S. Zhang, K. J. Chen, and K. M. Lau, “GaN-on-patterned-silicon (GPS) technique for fabrication of GaN-based MEMS,” Sens. Actuators A Phys. 130–131, 371–378 (2006).
[CrossRef]

Z. Yang, R. N. Wang, S. Jia, D. Wang, B. S. Zhang, K. M. Lau, and K. J. Chen, “Mechanical characterization of suspended GaN microstructures fabricated by GaN-on-patterned-silicon technique,” Appl. Phys. Lett. 88(4), 041913 (2006).
[CrossRef]

Wang, Y.

Y. Wang, F. Hu, M. Wakui, and K. Hane, “Freestanding GaN resonant gratings at telecommunication range,” IEEE Photon. Technol. Lett. 21(17), 1184–1186 (2009).
[CrossRef]

Y. Wang, F. Hu, M Wakui, and K Hane, “Frestanding circular GaN grating fabricated by fast atom beam etching,” Appl. Phys., A Mater. Sci. Process. 97, 39 (2009).
[CrossRef]

Y. Wang, Y. Kanamori, J. Ye, H. Sameshima, and K. Hane, “Fabrication and characterization of nanoscale resonant gratings on thin silicon membrane,” Opt. Express 17(7), 4938–4943 (2009).
[CrossRef] [PubMed]

Wierer, J. J.

J. J. Wierer, A. David, and M. M. Megens, “III-nitride photonic-crystal light-emitting diodes with high extraction efficiency,” Nat. Photonics 3(3), 163–169 (2009).
[CrossRef]

Yang, Z.

Z. Yang, R. N. Wang, S. Jia, D. Wang, B. S. Zhang, K. M. Lau, and K. J. Chen, “Mechanical characterization of suspended GaN microstructures fabricated by GaN-on-patterned-silicon technique,” Appl. Phys. Lett. 88(4), 041913 (2006).
[CrossRef]

Z. Yang, R. N. Wang, D. Wang, B. S. Zhang, K. J. Chen, and K. M. Lau, “GaN-on-patterned-silicon (GPS) technique for fabrication of GaN-based MEMS,” Sens. Actuators A Phys. 130–131, 371–378 (2006).
[CrossRef]

Yariv, A.

Ye, J.

Yoshimoto, S.

H. Matsubara, S. Yoshimoto, H. Saito, Y. Jianglin, Y. Tanaka, and S. Noda, “GaN photonic-crystal surface-emitting laser at blue-violet wavelengths,” Science 319(5862), 445–447 (2008).
[CrossRef]

Zhang, B. S.

Z. Yang, R. N. Wang, D. Wang, B. S. Zhang, K. J. Chen, and K. M. Lau, “GaN-on-patterned-silicon (GPS) technique for fabrication of GaN-based MEMS,” Sens. Actuators A Phys. 130–131, 371–378 (2006).
[CrossRef]

Z. Yang, R. N. Wang, S. Jia, D. Wang, B. S. Zhang, K. M. Lau, and K. J. Chen, “Mechanical characterization of suspended GaN microstructures fabricated by GaN-on-patterned-silicon technique,” Appl. Phys. Lett. 88(4), 041913 (2006).
[CrossRef]

Zhang, X. H.

H. W. Choi, K. N. Hui, P. T. Lai, P. Chen, X. H. Zhang, S. Tripathy, J. H. Teng, and S. J. Chua, “Lasing in GaN microdisks pivoted on Si,” Appl. Phys. Lett. 89(21), 211101 (2006).
[CrossRef]

Zhang, Z.

Y. Chen, Z. Li, Z. Zhang, D. Psaltis, and A. Scherer, “Nanoimprinted circular grating distributed feedback dye laser,” Appl. Phys. Lett. 91(5), 051109 (2007).
[CrossRef]

Zhao, Y.

F. R. Hu, Y. Kanamori, K. Ochi, Y. Zhao, M. Wakui, and K. Hane, “A 100 nm thick InGaN/GaN multiple quantum-well column-crystallized thin film deposited on Si(111) substrate and its micromachining,” Nanotechnology 19(3), 035305 (2008).
[CrossRef] [PubMed]

F. R. Hu, K. Ochi, Y. Zhao, and K. Hane, “High-efficiency light-emitting column-crystallized InGaN/GaN quantum-well flower structure on micropillared Si substrate,” Appl. Phys. Lett. 89(17), 171903 (2006).
[CrossRef]

Zhou, L.

Appl. Phys. Lett. (12)

M. Arita, S. Ishida, S. Kako, S. Iwamoto, and Y. Arakawa, “AlN air-bridge photonic crystal nanocavities demonstrating high quality factor,” Appl. Phys. Lett. 91(5), 051106 (2007).
[CrossRef]

Z. Yang, R. N. Wang, S. Jia, D. Wang, B. S. Zhang, K. M. Lau, and K. J. Chen, “Mechanical characterization of suspended GaN microstructures fabricated by GaN-on-patterned-silicon technique,” Appl. Phys. Lett. 88(4), 041913 (2006).
[CrossRef]

Y.-S. Choi, K. Hennessy, R. Sharma, E. Haberer, Y. Gao, S. P. DenBaars, S. Nakamura, E. L. Hu, and C. Meier, “GaN blue photonic crystal nanocavities,” Appl. Phys. Lett. 87(24), 243101 (2005).
[CrossRef]

C. Meier, K. Hennessy, E. D. Haberer, R. Sharma, Y.-S. Choi, K. McGroddy, S. Keller, S. P. DenBaars, S. Nakamura, and E. L. Hu, “Visible resonant modes in GaN-based photonic crystal cavities,” Appl. Phys. Lett. 88(3), 031111 (2006).
[CrossRef]

F. Schulze, A. Dadgar, J. Bläsing, A. Diez, and A. Krost, “Metalorganic vapor phase epitaxy grown InGaN/GaN light-emitting diodes on Si(001) substrate,” Appl. Phys. Lett. 88(12), 121114 (2006).
[CrossRef]

H. W. Choi, K. N. Hui, P. T. Lai, P. Chen, X. H. Zhang, S. Tripathy, J. H. Teng, and S. J. Chua, “Lasing in GaN microdisks pivoted on Si,” Appl. Phys. Lett. 89(21), 211101 (2006).
[CrossRef]

G. A. Turnbull, A. Carleton, A. Tahraouhi, T. F. Krauss, I. D. W. Samuel, G. F. Barlow, and K. A. Shore, “Effect of gain localization in circular-grating distributed feedback lasers,” Appl. Phys. Lett. 87(20), 201101 (2005).
[CrossRef]

Y. Chen, Z. Li, Z. Zhang, D. Psaltis, and A. Scherer, “Nanoimprinted circular grating distributed feedback dye laser,” Appl. Phys. Lett. 91(5), 051109 (2007).
[CrossRef]

H. Y. Ryu, Y. H. Lee, R. L. Sellin, and D. Bimberg, “Over 30-fold enhancement of light extraction from free-standing photonic crystal slabs with InGaAs quantum dots at low temperature,” Appl. Phys. Lett. 79(22), 3573 (2001).
[CrossRef]

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[CrossRef]

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[CrossRef]

F. R. Hu, K. Ochi, Y. Zhao, and K. Hane, “High-efficiency light-emitting column-crystallized InGaN/GaN quantum-well flower structure on micropillared Si substrate,” Appl. Phys. Lett. 89(17), 171903 (2006).
[CrossRef]

Appl. Phys., A Mater. Sci. Process. (1)

Y. Wang, F. Hu, M Wakui, and K Hane, “Frestanding circular GaN grating fabricated by fast atom beam etching,” Appl. Phys., A Mater. Sci. Process. 97, 39 (2009).
[CrossRef]

IEEE Photon. Technol. Lett. (1)

Y. Wang, F. Hu, M. Wakui, and K. Hane, “Freestanding GaN resonant gratings at telecommunication range,” IEEE Photon. Technol. Lett. 21(17), 1184–1186 (2009).
[CrossRef]

J. Appl. Phys. (1)

J.-M. Bethoux, P. Vennéguès, F. Natali, E. Feltin, O. Tottereau, G. Nataf, P. De Mierry, and F. Semond, “Growth of high quality crack-free AlGaN films on GaN templates using plastic relaxation through buried cracks,” J. Appl. Phys. 94(10), 6499 (2003).
[CrossRef]

J. Display Technol. (1)

J. Vac. Sci. Technol. B (1)

A. Rosenberg and K. Bussmann, “Mijin Kim, Michael W. Carter, M. A. Mastro, Ronald T. Holm, Richard L. Henry, Joshua D. Caldwell, and Charles R. Eddy, Jr., “Fabrication of GaN suspended photonic crystal slabs and resonant nanocavities on Si(111),” J. Vac. Sci. Technol. B 25(3), 721 (2007).
[CrossRef]

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[CrossRef]

Nanotechnology (1)

F. R. Hu, Y. Kanamori, K. Ochi, Y. Zhao, M. Wakui, and K. Hane, “A 100 nm thick InGaN/GaN multiple quantum-well column-crystallized thin film deposited on Si(111) substrate and its micromachining,” Nanotechnology 19(3), 035305 (2008).
[CrossRef] [PubMed]

Nat. Photonics (3)

J. J. Wierer, A. David, and M. M. Megens, “III-nitride photonic-crystal light-emitting diodes with high extraction efficiency,” Nat. Photonics 3(3), 163–169 (2009).
[CrossRef]

S. Noda and M. Fujita, “Light-emitting diodes: photonic crystal efficiency boost,” Nat. Photonics 3(3), 129–130 (2009).
[CrossRef]

A. C. Tamboli, E. D. Haberer, R. Sharma, K. H. Lee, S. Nakamura, and E. L. Hu, “Room-temperature continuous-wave lasing in GaN/InGaN microdisks,” Nat. Photonics 1(1), 61–64 (2007).
[CrossRef]

Opt. Express (5)

Science (1)

H. Matsubara, S. Yoshimoto, H. Saito, Y. Jianglin, Y. Tanaka, and S. Noda, “GaN photonic-crystal surface-emitting laser at blue-violet wavelengths,” Science 319(5862), 445–447 (2008).
[CrossRef]

Sens. Actuators A Phys. (1)

Z. Yang, R. N. Wang, D. Wang, B. S. Zhang, K. J. Chen, and K. M. Lau, “GaN-on-patterned-silicon (GPS) technique for fabrication of GaN-based MEMS,” Sens. Actuators A Phys. 130–131, 371–378 (2006).
[CrossRef]

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Figures (5)

Fig. 1
Fig. 1

The schematic layer structure of material used to make freestanding circular GaN grating.

Fig. 2
Fig. 2

Fabrication process of freestanding circular GaN grating.

Fig. 3
Fig. 3

(a) Sample of freestanding GaN slab obtained from Si substrate side; (b) three-dimensional surface profile of freestanding GaN slab; (c) optical micrograph of nanostructures on freestanding GaN slab.

Fig. 4
Fig. 4

SEM images of fabricated freestanding circular GaN gratings. (a) Whole grating region for 300nm-period circular grating; (b), (c) and (d) the close-up view of circular grating with grating period of 300nm, 600nm and 800nm, respectively.

Fig. 5
Fig. 5

(a) PL spectra of fabricated samples obtained from top surface; (b) PL spectra versus grating period obtained from top surface; (c) PL spectra of fabricated samples obtained from silicon substrate side.

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