Abstract

We have shown that the electromagnetic coupling of a grating-gate plasmonic detector to terahertz radiation can be considerably enhanced by placing the detector onto a membrane substrate and using a narrow-slit grating-gate. The responsivity of the membrane detector can be enhanced by a factor of 50 as compared to a conventional grating-gate plasmonic detector on a bulk substrate due to enhanced electromagnetic coupling between the plasmons and terahertz radiation.

© 2010 OSA

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  1. M. Dyakonov and M. Shur, “Detection, mixing, and frequency multiplication of terahertz radiation by two-dimensional electron fluid,” IEEE Trans. on Electron, Devices 43(3), 380–387 (1996).
    [CrossRef]
  2. W. Knap, J. Lusakowski, T. Parenty, S. Bollaert, A. Cappy, V. V. Popov, and M. S. Shur, “Terahertz emission by plasma waves in 60 nm gate high electron mobility transistors,” Appl. Phys. Lett. 84(13), 2331–2333 (2004).
    [CrossRef]
  3. A. Satou, V. Ryzhii, I. Khmyrova, M. Ryzhii, and M. S. Shur, “Characteristics of a terahertz photomixer based on a high-electron mobility transistor structure with optical input through the ungated regions,” J. Appl. Phys. 95(4), 2084–2089 (2004).
    [CrossRef]
  4. F. Teppe, W. Knap, D. Veksler, M. S. Shur, A. P. Dmitriev, V. Yu. Kachorovskii, and S. Rumyantsev, “Room-temperature plasma waves resonant detection of sub-terahertz radiation by nanometer field-effect transistor,” Appl. Phys. Lett. 87(5), 052107 (2005).
    [CrossRef]
  5. N. Pala, F. Teppe, D. Veksler, Y. Deng, M. S. Shur, and R. Gaska, “Nonresonant detection of terahertz radiation by silicon-on-insulator MOSFETs,” Electron. Lett. 41(7), 447–448 (2005).
    [CrossRef]
  6. A. El Fatimy, F. Teppe, N. Dyakonova, W. Knap, D. Seliuta, G. Valusis, A. Shcherepetov, Y. Roelens, S. Bollaert, A. Cappy, and S. Rumyantsev, “Resonant and voltage-tunable terahertz detection in InGaAs/InP nanometer transistors,” Appl. Phys. Lett. 89(13), 131926 (2006).
    [CrossRef]
  7. W. J. Stillman and M. S. Shur, “Closing the gap: Plasma wave electronic terahertz detectors,” J. Nanoelectron. Optoelectron. 2(3), 209–221 (2007).
    [CrossRef]
  8. A. El Fatimy, N. Dyakonova, Y. Meziani, T. Otsuji, W. Knap, S. Vandenbrouk, K. Madjour, D. Théron, C. Gaquiere, M. A. Poisson, S. Delage, P. Prystawko, and C. Skierbiszewski, “AlGaN/GaN high electron mobility transistors as a voltage-tunable room temperature terahertz sources,” J. Appl. Phys. 107(2), 024504 (2010).
    [CrossRef]
  9. A. Lisauskas, W. von Spiegel, S. Boubanga-Tombet, A. El Fatimy, D. Coquillat, F. Teppe, N. Dyakonova, W. Knap, and H. G. Roskos, “Terahertz imaging with GaAs field-effect transistors,” Electron. Lett. 44(6), 408–409 (2008).
    [CrossRef]
  10. A. El Fatimy, J. C. Delagnes, A. Younus, E. Nguema, F. Teppe, W. Knap, E. Abraham, and P. Mounaix, “Plasma wave field effect transistor as a resonant detector for 1 terahertz imaging applications,” Opt. Commun. 282(15), 3055–3058 (2009).
    [CrossRef]
  11. W. Knap, M. Dyakonov, D. Coquillat, F. Teppe, N. Dyakonova, J. Łusakowski, K. Karpierz, M. Sakowicz, G. Valusis, D. Seliuta, I. Kasalynas, A. El Fatimy, Y. M. Meziani, and T. Otsuji, “Field effect transistors for terahertz detection: Physics and first imaging applications,” J. Infrared Millim. Terahertz Waves 30(12), 1319–1337 (2009).
  12. S. J. Allen, D. C. Tsui, and R. A. Logan, “Observation of the two-dimensional plasmon in silicon inversion layers,” Phys. Rev. Lett. 38(17), 980–983 (1977).
    [CrossRef]
  13. T. N. Theis, J. P. Kotthaus, and P. J. Stiles, “Two-dimensional magnetoplasmon in the silicon inversion layer,” Solid State Commun. 24(4), 273–277 (1977).
    [CrossRef]
  14. X. G. Peralta, S. J. Allen, M. C. Wanke, N. E. Harff, J. A. Simmons, M. P. Lilly, J. L. Reno, P. J. Burke, and J. P. Eisenstein, “Terahertz photoconductivity and plasmon modes in double-quantum-well field-effect transistors,” Appl. Phys. Lett. 81(9), 1627–1629 (2002).
    [CrossRef]
  15. T. Otsuji, M. Hanabe, and O. Ogawara, “Terahertz plasma wave resonance of two-dimensional electrons in InGaP/InGaAs/GaAs high-electron-mobility transistors,” Appl. Phys. Lett. 85(11), 2119–2121 (2004).
    [CrossRef]
  16. E. A. Shaner, M. Lee, M. C. Wanke, A. D. Grine, J. L. Reno, and S. J. Allen, “Single-quantum-well grating-gated terahertz plasmon detectors,” Appl. Phys. Lett. 87(19), 193507 (2005).
    [CrossRef]
  17. A. V. Muravjov, D. B. Veksler, V. V. Popov, O. V. Polischuk, N. Pala, X. Hu, R. Gaska, H. Saxena, R. E. Peale, and M. S. Shur, “Temperature dependence of plasmonic terahertz absorption in grating-gate gallium-nitride transistor structures,” Appl. Phys. Lett. 96(4), 042105 (2010).
    [CrossRef]
  18. D. Coquillat, S. Nadar, F. Teppe, N. Dyakonova, S. Boubanga-Tombet, W. Knap, T. Nishimura, T. Otsuji, Y. M. Meziani, G. M. Tsymbalov, and V. V. Popov, “Room temperature detection of sub-terahertz radiation in double-grating-gate transistors,” Opt. Express 18(6), 6024–6032 (2010).
    [CrossRef] [PubMed]
  19. V. V. Popov, M. S. Shur, G. M. Tsymbalov, and D. V. Fateev, “Higher-order plasmon resonances in GaN-based field-effect transistor arrays,” Int. J. High Speed Electron. Syst. 17(3), 557–566 (2007).
    [CrossRef]
  20. E. A. Shaner, A. D. Grine, M. C. Wanke, M. Lee, J. L. Reno, and S. J. Allen, “Far-infrared spectrum analysis using plasmon modes in a quantum-well transistor,” IEEE Photon. Technol. Lett. 18(18), 1925–1927 (2006).
    [CrossRef]
  21. G. C. Dyer, J. D. Crossno, G. R. Aizin, E. A. Shaner, M. C. Wanke, J. L. Reno, and S. J. Allen, “A plasmonic terahertz detector with a monolithic hot electron bolometer,” J. Phys. Condens. Matter 21(19), 195803 (2009).
    [CrossRef] [PubMed]
  22. V. Ryzhii, A. Satou, T. Otsuji, and M. S. Shur, “Plasma mechanisms of resonant terahertz detection in a two-dimensional electron channel with split gates,” J. Appl. Phys. 103(1), 014504 (2008).
    [CrossRef]
  23. E. A. Shaner, M. C. Wanke, A. D. Grine, S. K. Lyo, J. L. Reno, and S. J. Allen, “‘Enhanced responsivity in membrane isolated split-grating-gate plasmonic terahertz detectors,” Appl. Phys. Lett. 90(18), 181127 (2007).
    [CrossRef]
  24. D. S. Tsui, S. J. Allen, R. A. Logan, A. Kamgar, and S. N. Coppersmith, “High-frequency conductivity ijn silicon inversion layers: Drude relaxation, 2D plasmons and minigaps in a surface superlattice,” Surf. Sci. 73, 419–433 (1978).
    [CrossRef]
  25. V. V. Popov, O. V. Polischuk, T. V. Teperik, X. G. Peralta, S. J. Allen, N. J. M. Horing, and M. C. Wanke, “Absorption of terahertz radiation by plasmon modes in a grid-gated double-quantum-well field-effect transistor,” J. Appl. Phys. 94(5), 3556–3562 (2003).
    [CrossRef]
  26. Equation (3) is approximately valid also for a bulk substrate of finite thickness with a bevel back surface, in which the interference effects in the substrate are eliminated.
  27. E. H. Newman and J. L. Blanchard, “TM scattering by an impedance sheet extension of a parabolic cylinder,” IEEE Trans. Antenn. Propag. 36(4), 527–534 (1988).
    [CrossRef]
  28. V. V. Popov, G. M. Tsymbalov, and M. S. Shur, “Plasma wave instability and amplification of terahertz radiation in field-effect-transistor arrays,” J. Phys. Condens. Matter 20(38), 384208 (2008).
    [CrossRef] [PubMed]

2010 (3)

A. El Fatimy, N. Dyakonova, Y. Meziani, T. Otsuji, W. Knap, S. Vandenbrouk, K. Madjour, D. Théron, C. Gaquiere, M. A. Poisson, S. Delage, P. Prystawko, and C. Skierbiszewski, “AlGaN/GaN high electron mobility transistors as a voltage-tunable room temperature terahertz sources,” J. Appl. Phys. 107(2), 024504 (2010).
[CrossRef]

A. V. Muravjov, D. B. Veksler, V. V. Popov, O. V. Polischuk, N. Pala, X. Hu, R. Gaska, H. Saxena, R. E. Peale, and M. S. Shur, “Temperature dependence of plasmonic terahertz absorption in grating-gate gallium-nitride transistor structures,” Appl. Phys. Lett. 96(4), 042105 (2010).
[CrossRef]

D. Coquillat, S. Nadar, F. Teppe, N. Dyakonova, S. Boubanga-Tombet, W. Knap, T. Nishimura, T. Otsuji, Y. M. Meziani, G. M. Tsymbalov, and V. V. Popov, “Room temperature detection of sub-terahertz radiation in double-grating-gate transistors,” Opt. Express 18(6), 6024–6032 (2010).
[CrossRef] [PubMed]

2009 (3)

G. C. Dyer, J. D. Crossno, G. R. Aizin, E. A. Shaner, M. C. Wanke, J. L. Reno, and S. J. Allen, “A plasmonic terahertz detector with a monolithic hot electron bolometer,” J. Phys. Condens. Matter 21(19), 195803 (2009).
[CrossRef] [PubMed]

A. El Fatimy, J. C. Delagnes, A. Younus, E. Nguema, F. Teppe, W. Knap, E. Abraham, and P. Mounaix, “Plasma wave field effect transistor as a resonant detector for 1 terahertz imaging applications,” Opt. Commun. 282(15), 3055–3058 (2009).
[CrossRef]

W. Knap, M. Dyakonov, D. Coquillat, F. Teppe, N. Dyakonova, J. Łusakowski, K. Karpierz, M. Sakowicz, G. Valusis, D. Seliuta, I. Kasalynas, A. El Fatimy, Y. M. Meziani, and T. Otsuji, “Field effect transistors for terahertz detection: Physics and first imaging applications,” J. Infrared Millim. Terahertz Waves 30(12), 1319–1337 (2009).

2008 (3)

A. Lisauskas, W. von Spiegel, S. Boubanga-Tombet, A. El Fatimy, D. Coquillat, F. Teppe, N. Dyakonova, W. Knap, and H. G. Roskos, “Terahertz imaging with GaAs field-effect transistors,” Electron. Lett. 44(6), 408–409 (2008).
[CrossRef]

V. Ryzhii, A. Satou, T. Otsuji, and M. S. Shur, “Plasma mechanisms of resonant terahertz detection in a two-dimensional electron channel with split gates,” J. Appl. Phys. 103(1), 014504 (2008).
[CrossRef]

V. V. Popov, G. M. Tsymbalov, and M. S. Shur, “Plasma wave instability and amplification of terahertz radiation in field-effect-transistor arrays,” J. Phys. Condens. Matter 20(38), 384208 (2008).
[CrossRef] [PubMed]

2007 (3)

E. A. Shaner, M. C. Wanke, A. D. Grine, S. K. Lyo, J. L. Reno, and S. J. Allen, “‘Enhanced responsivity in membrane isolated split-grating-gate plasmonic terahertz detectors,” Appl. Phys. Lett. 90(18), 181127 (2007).
[CrossRef]

V. V. Popov, M. S. Shur, G. M. Tsymbalov, and D. V. Fateev, “Higher-order plasmon resonances in GaN-based field-effect transistor arrays,” Int. J. High Speed Electron. Syst. 17(3), 557–566 (2007).
[CrossRef]

W. J. Stillman and M. S. Shur, “Closing the gap: Plasma wave electronic terahertz detectors,” J. Nanoelectron. Optoelectron. 2(3), 209–221 (2007).
[CrossRef]

2006 (2)

A. El Fatimy, F. Teppe, N. Dyakonova, W. Knap, D. Seliuta, G. Valusis, A. Shcherepetov, Y. Roelens, S. Bollaert, A. Cappy, and S. Rumyantsev, “Resonant and voltage-tunable terahertz detection in InGaAs/InP nanometer transistors,” Appl. Phys. Lett. 89(13), 131926 (2006).
[CrossRef]

E. A. Shaner, A. D. Grine, M. C. Wanke, M. Lee, J. L. Reno, and S. J. Allen, “Far-infrared spectrum analysis using plasmon modes in a quantum-well transistor,” IEEE Photon. Technol. Lett. 18(18), 1925–1927 (2006).
[CrossRef]

2005 (3)

F. Teppe, W. Knap, D. Veksler, M. S. Shur, A. P. Dmitriev, V. Yu. Kachorovskii, and S. Rumyantsev, “Room-temperature plasma waves resonant detection of sub-terahertz radiation by nanometer field-effect transistor,” Appl. Phys. Lett. 87(5), 052107 (2005).
[CrossRef]

N. Pala, F. Teppe, D. Veksler, Y. Deng, M. S. Shur, and R. Gaska, “Nonresonant detection of terahertz radiation by silicon-on-insulator MOSFETs,” Electron. Lett. 41(7), 447–448 (2005).
[CrossRef]

E. A. Shaner, M. Lee, M. C. Wanke, A. D. Grine, J. L. Reno, and S. J. Allen, “Single-quantum-well grating-gated terahertz plasmon detectors,” Appl. Phys. Lett. 87(19), 193507 (2005).
[CrossRef]

2004 (3)

T. Otsuji, M. Hanabe, and O. Ogawara, “Terahertz plasma wave resonance of two-dimensional electrons in InGaP/InGaAs/GaAs high-electron-mobility transistors,” Appl. Phys. Lett. 85(11), 2119–2121 (2004).
[CrossRef]

W. Knap, J. Lusakowski, T. Parenty, S. Bollaert, A. Cappy, V. V. Popov, and M. S. Shur, “Terahertz emission by plasma waves in 60 nm gate high electron mobility transistors,” Appl. Phys. Lett. 84(13), 2331–2333 (2004).
[CrossRef]

A. Satou, V. Ryzhii, I. Khmyrova, M. Ryzhii, and M. S. Shur, “Characteristics of a terahertz photomixer based on a high-electron mobility transistor structure with optical input through the ungated regions,” J. Appl. Phys. 95(4), 2084–2089 (2004).
[CrossRef]

2003 (1)

V. V. Popov, O. V. Polischuk, T. V. Teperik, X. G. Peralta, S. J. Allen, N. J. M. Horing, and M. C. Wanke, “Absorption of terahertz radiation by plasmon modes in a grid-gated double-quantum-well field-effect transistor,” J. Appl. Phys. 94(5), 3556–3562 (2003).
[CrossRef]

2002 (1)

X. G. Peralta, S. J. Allen, M. C. Wanke, N. E. Harff, J. A. Simmons, M. P. Lilly, J. L. Reno, P. J. Burke, and J. P. Eisenstein, “Terahertz photoconductivity and plasmon modes in double-quantum-well field-effect transistors,” Appl. Phys. Lett. 81(9), 1627–1629 (2002).
[CrossRef]

1996 (1)

M. Dyakonov and M. Shur, “Detection, mixing, and frequency multiplication of terahertz radiation by two-dimensional electron fluid,” IEEE Trans. on Electron, Devices 43(3), 380–387 (1996).
[CrossRef]

1988 (1)

E. H. Newman and J. L. Blanchard, “TM scattering by an impedance sheet extension of a parabolic cylinder,” IEEE Trans. Antenn. Propag. 36(4), 527–534 (1988).
[CrossRef]

1978 (1)

D. S. Tsui, S. J. Allen, R. A. Logan, A. Kamgar, and S. N. Coppersmith, “High-frequency conductivity ijn silicon inversion layers: Drude relaxation, 2D plasmons and minigaps in a surface superlattice,” Surf. Sci. 73, 419–433 (1978).
[CrossRef]

1977 (2)

S. J. Allen, D. C. Tsui, and R. A. Logan, “Observation of the two-dimensional plasmon in silicon inversion layers,” Phys. Rev. Lett. 38(17), 980–983 (1977).
[CrossRef]

T. N. Theis, J. P. Kotthaus, and P. J. Stiles, “Two-dimensional magnetoplasmon in the silicon inversion layer,” Solid State Commun. 24(4), 273–277 (1977).
[CrossRef]

Abraham, E.

A. El Fatimy, J. C. Delagnes, A. Younus, E. Nguema, F. Teppe, W. Knap, E. Abraham, and P. Mounaix, “Plasma wave field effect transistor as a resonant detector for 1 terahertz imaging applications,” Opt. Commun. 282(15), 3055–3058 (2009).
[CrossRef]

Aizin, G. R.

G. C. Dyer, J. D. Crossno, G. R. Aizin, E. A. Shaner, M. C. Wanke, J. L. Reno, and S. J. Allen, “A plasmonic terahertz detector with a monolithic hot electron bolometer,” J. Phys. Condens. Matter 21(19), 195803 (2009).
[CrossRef] [PubMed]

Allen, S. J.

G. C. Dyer, J. D. Crossno, G. R. Aizin, E. A. Shaner, M. C. Wanke, J. L. Reno, and S. J. Allen, “A plasmonic terahertz detector with a monolithic hot electron bolometer,” J. Phys. Condens. Matter 21(19), 195803 (2009).
[CrossRef] [PubMed]

E. A. Shaner, M. C. Wanke, A. D. Grine, S. K. Lyo, J. L. Reno, and S. J. Allen, “‘Enhanced responsivity in membrane isolated split-grating-gate plasmonic terahertz detectors,” Appl. Phys. Lett. 90(18), 181127 (2007).
[CrossRef]

E. A. Shaner, A. D. Grine, M. C. Wanke, M. Lee, J. L. Reno, and S. J. Allen, “Far-infrared spectrum analysis using plasmon modes in a quantum-well transistor,” IEEE Photon. Technol. Lett. 18(18), 1925–1927 (2006).
[CrossRef]

E. A. Shaner, M. Lee, M. C. Wanke, A. D. Grine, J. L. Reno, and S. J. Allen, “Single-quantum-well grating-gated terahertz plasmon detectors,” Appl. Phys. Lett. 87(19), 193507 (2005).
[CrossRef]

V. V. Popov, O. V. Polischuk, T. V. Teperik, X. G. Peralta, S. J. Allen, N. J. M. Horing, and M. C. Wanke, “Absorption of terahertz radiation by plasmon modes in a grid-gated double-quantum-well field-effect transistor,” J. Appl. Phys. 94(5), 3556–3562 (2003).
[CrossRef]

X. G. Peralta, S. J. Allen, M. C. Wanke, N. E. Harff, J. A. Simmons, M. P. Lilly, J. L. Reno, P. J. Burke, and J. P. Eisenstein, “Terahertz photoconductivity and plasmon modes in double-quantum-well field-effect transistors,” Appl. Phys. Lett. 81(9), 1627–1629 (2002).
[CrossRef]

D. S. Tsui, S. J. Allen, R. A. Logan, A. Kamgar, and S. N. Coppersmith, “High-frequency conductivity ijn silicon inversion layers: Drude relaxation, 2D plasmons and minigaps in a surface superlattice,” Surf. Sci. 73, 419–433 (1978).
[CrossRef]

S. J. Allen, D. C. Tsui, and R. A. Logan, “Observation of the two-dimensional plasmon in silicon inversion layers,” Phys. Rev. Lett. 38(17), 980–983 (1977).
[CrossRef]

Blanchard, J. L.

E. H. Newman and J. L. Blanchard, “TM scattering by an impedance sheet extension of a parabolic cylinder,” IEEE Trans. Antenn. Propag. 36(4), 527–534 (1988).
[CrossRef]

Bollaert, S.

A. El Fatimy, F. Teppe, N. Dyakonova, W. Knap, D. Seliuta, G. Valusis, A. Shcherepetov, Y. Roelens, S. Bollaert, A. Cappy, and S. Rumyantsev, “Resonant and voltage-tunable terahertz detection in InGaAs/InP nanometer transistors,” Appl. Phys. Lett. 89(13), 131926 (2006).
[CrossRef]

W. Knap, J. Lusakowski, T. Parenty, S. Bollaert, A. Cappy, V. V. Popov, and M. S. Shur, “Terahertz emission by plasma waves in 60 nm gate high electron mobility transistors,” Appl. Phys. Lett. 84(13), 2331–2333 (2004).
[CrossRef]

Boubanga-Tombet, S.

D. Coquillat, S. Nadar, F. Teppe, N. Dyakonova, S. Boubanga-Tombet, W. Knap, T. Nishimura, T. Otsuji, Y. M. Meziani, G. M. Tsymbalov, and V. V. Popov, “Room temperature detection of sub-terahertz radiation in double-grating-gate transistors,” Opt. Express 18(6), 6024–6032 (2010).
[CrossRef] [PubMed]

A. Lisauskas, W. von Spiegel, S. Boubanga-Tombet, A. El Fatimy, D. Coquillat, F. Teppe, N. Dyakonova, W. Knap, and H. G. Roskos, “Terahertz imaging with GaAs field-effect transistors,” Electron. Lett. 44(6), 408–409 (2008).
[CrossRef]

Burke, P. J.

X. G. Peralta, S. J. Allen, M. C. Wanke, N. E. Harff, J. A. Simmons, M. P. Lilly, J. L. Reno, P. J. Burke, and J. P. Eisenstein, “Terahertz photoconductivity and plasmon modes in double-quantum-well field-effect transistors,” Appl. Phys. Lett. 81(9), 1627–1629 (2002).
[CrossRef]

Cappy, A.

A. El Fatimy, F. Teppe, N. Dyakonova, W. Knap, D. Seliuta, G. Valusis, A. Shcherepetov, Y. Roelens, S. Bollaert, A. Cappy, and S. Rumyantsev, “Resonant and voltage-tunable terahertz detection in InGaAs/InP nanometer transistors,” Appl. Phys. Lett. 89(13), 131926 (2006).
[CrossRef]

W. Knap, J. Lusakowski, T. Parenty, S. Bollaert, A. Cappy, V. V. Popov, and M. S. Shur, “Terahertz emission by plasma waves in 60 nm gate high electron mobility transistors,” Appl. Phys. Lett. 84(13), 2331–2333 (2004).
[CrossRef]

Coppersmith, S. N.

D. S. Tsui, S. J. Allen, R. A. Logan, A. Kamgar, and S. N. Coppersmith, “High-frequency conductivity ijn silicon inversion layers: Drude relaxation, 2D plasmons and minigaps in a surface superlattice,” Surf. Sci. 73, 419–433 (1978).
[CrossRef]

Coquillat, D.

D. Coquillat, S. Nadar, F. Teppe, N. Dyakonova, S. Boubanga-Tombet, W. Knap, T. Nishimura, T. Otsuji, Y. M. Meziani, G. M. Tsymbalov, and V. V. Popov, “Room temperature detection of sub-terahertz radiation in double-grating-gate transistors,” Opt. Express 18(6), 6024–6032 (2010).
[CrossRef] [PubMed]

W. Knap, M. Dyakonov, D. Coquillat, F. Teppe, N. Dyakonova, J. Łusakowski, K. Karpierz, M. Sakowicz, G. Valusis, D. Seliuta, I. Kasalynas, A. El Fatimy, Y. M. Meziani, and T. Otsuji, “Field effect transistors for terahertz detection: Physics and first imaging applications,” J. Infrared Millim. Terahertz Waves 30(12), 1319–1337 (2009).

A. Lisauskas, W. von Spiegel, S. Boubanga-Tombet, A. El Fatimy, D. Coquillat, F. Teppe, N. Dyakonova, W. Knap, and H. G. Roskos, “Terahertz imaging with GaAs field-effect transistors,” Electron. Lett. 44(6), 408–409 (2008).
[CrossRef]

Crossno, J. D.

G. C. Dyer, J. D. Crossno, G. R. Aizin, E. A. Shaner, M. C. Wanke, J. L. Reno, and S. J. Allen, “A plasmonic terahertz detector with a monolithic hot electron bolometer,” J. Phys. Condens. Matter 21(19), 195803 (2009).
[CrossRef] [PubMed]

Delage, S.

A. El Fatimy, N. Dyakonova, Y. Meziani, T. Otsuji, W. Knap, S. Vandenbrouk, K. Madjour, D. Théron, C. Gaquiere, M. A. Poisson, S. Delage, P. Prystawko, and C. Skierbiszewski, “AlGaN/GaN high electron mobility transistors as a voltage-tunable room temperature terahertz sources,” J. Appl. Phys. 107(2), 024504 (2010).
[CrossRef]

Delagnes, J. C.

A. El Fatimy, J. C. Delagnes, A. Younus, E. Nguema, F. Teppe, W. Knap, E. Abraham, and P. Mounaix, “Plasma wave field effect transistor as a resonant detector for 1 terahertz imaging applications,” Opt. Commun. 282(15), 3055–3058 (2009).
[CrossRef]

Deng, Y.

N. Pala, F. Teppe, D. Veksler, Y. Deng, M. S. Shur, and R. Gaska, “Nonresonant detection of terahertz radiation by silicon-on-insulator MOSFETs,” Electron. Lett. 41(7), 447–448 (2005).
[CrossRef]

Dmitriev, A. P.

F. Teppe, W. Knap, D. Veksler, M. S. Shur, A. P. Dmitriev, V. Yu. Kachorovskii, and S. Rumyantsev, “Room-temperature plasma waves resonant detection of sub-terahertz radiation by nanometer field-effect transistor,” Appl. Phys. Lett. 87(5), 052107 (2005).
[CrossRef]

Dyakonov, M.

W. Knap, M. Dyakonov, D. Coquillat, F. Teppe, N. Dyakonova, J. Łusakowski, K. Karpierz, M. Sakowicz, G. Valusis, D. Seliuta, I. Kasalynas, A. El Fatimy, Y. M. Meziani, and T. Otsuji, “Field effect transistors for terahertz detection: Physics and first imaging applications,” J. Infrared Millim. Terahertz Waves 30(12), 1319–1337 (2009).

M. Dyakonov and M. Shur, “Detection, mixing, and frequency multiplication of terahertz radiation by two-dimensional electron fluid,” IEEE Trans. on Electron, Devices 43(3), 380–387 (1996).
[CrossRef]

Dyakonova, N.

D. Coquillat, S. Nadar, F. Teppe, N. Dyakonova, S. Boubanga-Tombet, W. Knap, T. Nishimura, T. Otsuji, Y. M. Meziani, G. M. Tsymbalov, and V. V. Popov, “Room temperature detection of sub-terahertz radiation in double-grating-gate transistors,” Opt. Express 18(6), 6024–6032 (2010).
[CrossRef] [PubMed]

A. El Fatimy, N. Dyakonova, Y. Meziani, T. Otsuji, W. Knap, S. Vandenbrouk, K. Madjour, D. Théron, C. Gaquiere, M. A. Poisson, S. Delage, P. Prystawko, and C. Skierbiszewski, “AlGaN/GaN high electron mobility transistors as a voltage-tunable room temperature terahertz sources,” J. Appl. Phys. 107(2), 024504 (2010).
[CrossRef]

W. Knap, M. Dyakonov, D. Coquillat, F. Teppe, N. Dyakonova, J. Łusakowski, K. Karpierz, M. Sakowicz, G. Valusis, D. Seliuta, I. Kasalynas, A. El Fatimy, Y. M. Meziani, and T. Otsuji, “Field effect transistors for terahertz detection: Physics and first imaging applications,” J. Infrared Millim. Terahertz Waves 30(12), 1319–1337 (2009).

A. Lisauskas, W. von Spiegel, S. Boubanga-Tombet, A. El Fatimy, D. Coquillat, F. Teppe, N. Dyakonova, W. Knap, and H. G. Roskos, “Terahertz imaging with GaAs field-effect transistors,” Electron. Lett. 44(6), 408–409 (2008).
[CrossRef]

A. El Fatimy, F. Teppe, N. Dyakonova, W. Knap, D. Seliuta, G. Valusis, A. Shcherepetov, Y. Roelens, S. Bollaert, A. Cappy, and S. Rumyantsev, “Resonant and voltage-tunable terahertz detection in InGaAs/InP nanometer transistors,” Appl. Phys. Lett. 89(13), 131926 (2006).
[CrossRef]

Dyer, G. C.

G. C. Dyer, J. D. Crossno, G. R. Aizin, E. A. Shaner, M. C. Wanke, J. L. Reno, and S. J. Allen, “A plasmonic terahertz detector with a monolithic hot electron bolometer,” J. Phys. Condens. Matter 21(19), 195803 (2009).
[CrossRef] [PubMed]

Eisenstein, J. P.

X. G. Peralta, S. J. Allen, M. C. Wanke, N. E. Harff, J. A. Simmons, M. P. Lilly, J. L. Reno, P. J. Burke, and J. P. Eisenstein, “Terahertz photoconductivity and plasmon modes in double-quantum-well field-effect transistors,” Appl. Phys. Lett. 81(9), 1627–1629 (2002).
[CrossRef]

El Fatimy, A.

A. El Fatimy, N. Dyakonova, Y. Meziani, T. Otsuji, W. Knap, S. Vandenbrouk, K. Madjour, D. Théron, C. Gaquiere, M. A. Poisson, S. Delage, P. Prystawko, and C. Skierbiszewski, “AlGaN/GaN high electron mobility transistors as a voltage-tunable room temperature terahertz sources,” J. Appl. Phys. 107(2), 024504 (2010).
[CrossRef]

A. El Fatimy, J. C. Delagnes, A. Younus, E. Nguema, F. Teppe, W. Knap, E. Abraham, and P. Mounaix, “Plasma wave field effect transistor as a resonant detector for 1 terahertz imaging applications,” Opt. Commun. 282(15), 3055–3058 (2009).
[CrossRef]

W. Knap, M. Dyakonov, D. Coquillat, F. Teppe, N. Dyakonova, J. Łusakowski, K. Karpierz, M. Sakowicz, G. Valusis, D. Seliuta, I. Kasalynas, A. El Fatimy, Y. M. Meziani, and T. Otsuji, “Field effect transistors for terahertz detection: Physics and first imaging applications,” J. Infrared Millim. Terahertz Waves 30(12), 1319–1337 (2009).

A. Lisauskas, W. von Spiegel, S. Boubanga-Tombet, A. El Fatimy, D. Coquillat, F. Teppe, N. Dyakonova, W. Knap, and H. G. Roskos, “Terahertz imaging with GaAs field-effect transistors,” Electron. Lett. 44(6), 408–409 (2008).
[CrossRef]

A. El Fatimy, F. Teppe, N. Dyakonova, W. Knap, D. Seliuta, G. Valusis, A. Shcherepetov, Y. Roelens, S. Bollaert, A. Cappy, and S. Rumyantsev, “Resonant and voltage-tunable terahertz detection in InGaAs/InP nanometer transistors,” Appl. Phys. Lett. 89(13), 131926 (2006).
[CrossRef]

Fateev, D. V.

V. V. Popov, M. S. Shur, G. M. Tsymbalov, and D. V. Fateev, “Higher-order plasmon resonances in GaN-based field-effect transistor arrays,” Int. J. High Speed Electron. Syst. 17(3), 557–566 (2007).
[CrossRef]

Gaquiere, C.

A. El Fatimy, N. Dyakonova, Y. Meziani, T. Otsuji, W. Knap, S. Vandenbrouk, K. Madjour, D. Théron, C. Gaquiere, M. A. Poisson, S. Delage, P. Prystawko, and C. Skierbiszewski, “AlGaN/GaN high electron mobility transistors as a voltage-tunable room temperature terahertz sources,” J. Appl. Phys. 107(2), 024504 (2010).
[CrossRef]

Gaska, R.

A. V. Muravjov, D. B. Veksler, V. V. Popov, O. V. Polischuk, N. Pala, X. Hu, R. Gaska, H. Saxena, R. E. Peale, and M. S. Shur, “Temperature dependence of plasmonic terahertz absorption in grating-gate gallium-nitride transistor structures,” Appl. Phys. Lett. 96(4), 042105 (2010).
[CrossRef]

N. Pala, F. Teppe, D. Veksler, Y. Deng, M. S. Shur, and R. Gaska, “Nonresonant detection of terahertz radiation by silicon-on-insulator MOSFETs,” Electron. Lett. 41(7), 447–448 (2005).
[CrossRef]

Grine, A. D.

E. A. Shaner, M. C. Wanke, A. D. Grine, S. K. Lyo, J. L. Reno, and S. J. Allen, “‘Enhanced responsivity in membrane isolated split-grating-gate plasmonic terahertz detectors,” Appl. Phys. Lett. 90(18), 181127 (2007).
[CrossRef]

E. A. Shaner, A. D. Grine, M. C. Wanke, M. Lee, J. L. Reno, and S. J. Allen, “Far-infrared spectrum analysis using plasmon modes in a quantum-well transistor,” IEEE Photon. Technol. Lett. 18(18), 1925–1927 (2006).
[CrossRef]

E. A. Shaner, M. Lee, M. C. Wanke, A. D. Grine, J. L. Reno, and S. J. Allen, “Single-quantum-well grating-gated terahertz plasmon detectors,” Appl. Phys. Lett. 87(19), 193507 (2005).
[CrossRef]

Hanabe, M.

T. Otsuji, M. Hanabe, and O. Ogawara, “Terahertz plasma wave resonance of two-dimensional electrons in InGaP/InGaAs/GaAs high-electron-mobility transistors,” Appl. Phys. Lett. 85(11), 2119–2121 (2004).
[CrossRef]

Harff, N. E.

X. G. Peralta, S. J. Allen, M. C. Wanke, N. E. Harff, J. A. Simmons, M. P. Lilly, J. L. Reno, P. J. Burke, and J. P. Eisenstein, “Terahertz photoconductivity and plasmon modes in double-quantum-well field-effect transistors,” Appl. Phys. Lett. 81(9), 1627–1629 (2002).
[CrossRef]

Horing, N. J. M.

V. V. Popov, O. V. Polischuk, T. V. Teperik, X. G. Peralta, S. J. Allen, N. J. M. Horing, and M. C. Wanke, “Absorption of terahertz radiation by plasmon modes in a grid-gated double-quantum-well field-effect transistor,” J. Appl. Phys. 94(5), 3556–3562 (2003).
[CrossRef]

Hu, X.

A. V. Muravjov, D. B. Veksler, V. V. Popov, O. V. Polischuk, N. Pala, X. Hu, R. Gaska, H. Saxena, R. E. Peale, and M. S. Shur, “Temperature dependence of plasmonic terahertz absorption in grating-gate gallium-nitride transistor structures,” Appl. Phys. Lett. 96(4), 042105 (2010).
[CrossRef]

Kachorovskii, V. Yu.

F. Teppe, W. Knap, D. Veksler, M. S. Shur, A. P. Dmitriev, V. Yu. Kachorovskii, and S. Rumyantsev, “Room-temperature plasma waves resonant detection of sub-terahertz radiation by nanometer field-effect transistor,” Appl. Phys. Lett. 87(5), 052107 (2005).
[CrossRef]

Kamgar, A.

D. S. Tsui, S. J. Allen, R. A. Logan, A. Kamgar, and S. N. Coppersmith, “High-frequency conductivity ijn silicon inversion layers: Drude relaxation, 2D plasmons and minigaps in a surface superlattice,” Surf. Sci. 73, 419–433 (1978).
[CrossRef]

Karpierz, K.

W. Knap, M. Dyakonov, D. Coquillat, F. Teppe, N. Dyakonova, J. Łusakowski, K. Karpierz, M. Sakowicz, G. Valusis, D. Seliuta, I. Kasalynas, A. El Fatimy, Y. M. Meziani, and T. Otsuji, “Field effect transistors for terahertz detection: Physics and first imaging applications,” J. Infrared Millim. Terahertz Waves 30(12), 1319–1337 (2009).

Kasalynas, I.

W. Knap, M. Dyakonov, D. Coquillat, F. Teppe, N. Dyakonova, J. Łusakowski, K. Karpierz, M. Sakowicz, G. Valusis, D. Seliuta, I. Kasalynas, A. El Fatimy, Y. M. Meziani, and T. Otsuji, “Field effect transistors for terahertz detection: Physics and first imaging applications,” J. Infrared Millim. Terahertz Waves 30(12), 1319–1337 (2009).

Khmyrova, I.

A. Satou, V. Ryzhii, I. Khmyrova, M. Ryzhii, and M. S. Shur, “Characteristics of a terahertz photomixer based on a high-electron mobility transistor structure with optical input through the ungated regions,” J. Appl. Phys. 95(4), 2084–2089 (2004).
[CrossRef]

Knap, W.

D. Coquillat, S. Nadar, F. Teppe, N. Dyakonova, S. Boubanga-Tombet, W. Knap, T. Nishimura, T. Otsuji, Y. M. Meziani, G. M. Tsymbalov, and V. V. Popov, “Room temperature detection of sub-terahertz radiation in double-grating-gate transistors,” Opt. Express 18(6), 6024–6032 (2010).
[CrossRef] [PubMed]

A. El Fatimy, N. Dyakonova, Y. Meziani, T. Otsuji, W. Knap, S. Vandenbrouk, K. Madjour, D. Théron, C. Gaquiere, M. A. Poisson, S. Delage, P. Prystawko, and C. Skierbiszewski, “AlGaN/GaN high electron mobility transistors as a voltage-tunable room temperature terahertz sources,” J. Appl. Phys. 107(2), 024504 (2010).
[CrossRef]

A. El Fatimy, J. C. Delagnes, A. Younus, E. Nguema, F. Teppe, W. Knap, E. Abraham, and P. Mounaix, “Plasma wave field effect transistor as a resonant detector for 1 terahertz imaging applications,” Opt. Commun. 282(15), 3055–3058 (2009).
[CrossRef]

W. Knap, M. Dyakonov, D. Coquillat, F. Teppe, N. Dyakonova, J. Łusakowski, K. Karpierz, M. Sakowicz, G. Valusis, D. Seliuta, I. Kasalynas, A. El Fatimy, Y. M. Meziani, and T. Otsuji, “Field effect transistors for terahertz detection: Physics and first imaging applications,” J. Infrared Millim. Terahertz Waves 30(12), 1319–1337 (2009).

A. Lisauskas, W. von Spiegel, S. Boubanga-Tombet, A. El Fatimy, D. Coquillat, F. Teppe, N. Dyakonova, W. Knap, and H. G. Roskos, “Terahertz imaging with GaAs field-effect transistors,” Electron. Lett. 44(6), 408–409 (2008).
[CrossRef]

A. El Fatimy, F. Teppe, N. Dyakonova, W. Knap, D. Seliuta, G. Valusis, A. Shcherepetov, Y. Roelens, S. Bollaert, A. Cappy, and S. Rumyantsev, “Resonant and voltage-tunable terahertz detection in InGaAs/InP nanometer transistors,” Appl. Phys. Lett. 89(13), 131926 (2006).
[CrossRef]

F. Teppe, W. Knap, D. Veksler, M. S. Shur, A. P. Dmitriev, V. Yu. Kachorovskii, and S. Rumyantsev, “Room-temperature plasma waves resonant detection of sub-terahertz radiation by nanometer field-effect transistor,” Appl. Phys. Lett. 87(5), 052107 (2005).
[CrossRef]

W. Knap, J. Lusakowski, T. Parenty, S. Bollaert, A. Cappy, V. V. Popov, and M. S. Shur, “Terahertz emission by plasma waves in 60 nm gate high electron mobility transistors,” Appl. Phys. Lett. 84(13), 2331–2333 (2004).
[CrossRef]

Kotthaus, J. P.

T. N. Theis, J. P. Kotthaus, and P. J. Stiles, “Two-dimensional magnetoplasmon in the silicon inversion layer,” Solid State Commun. 24(4), 273–277 (1977).
[CrossRef]

Lee, M.

E. A. Shaner, A. D. Grine, M. C. Wanke, M. Lee, J. L. Reno, and S. J. Allen, “Far-infrared spectrum analysis using plasmon modes in a quantum-well transistor,” IEEE Photon. Technol. Lett. 18(18), 1925–1927 (2006).
[CrossRef]

E. A. Shaner, M. Lee, M. C. Wanke, A. D. Grine, J. L. Reno, and S. J. Allen, “Single-quantum-well grating-gated terahertz plasmon detectors,” Appl. Phys. Lett. 87(19), 193507 (2005).
[CrossRef]

Lilly, M. P.

X. G. Peralta, S. J. Allen, M. C. Wanke, N. E. Harff, J. A. Simmons, M. P. Lilly, J. L. Reno, P. J. Burke, and J. P. Eisenstein, “Terahertz photoconductivity and plasmon modes in double-quantum-well field-effect transistors,” Appl. Phys. Lett. 81(9), 1627–1629 (2002).
[CrossRef]

Lisauskas, A.

A. Lisauskas, W. von Spiegel, S. Boubanga-Tombet, A. El Fatimy, D. Coquillat, F. Teppe, N. Dyakonova, W. Knap, and H. G. Roskos, “Terahertz imaging with GaAs field-effect transistors,” Electron. Lett. 44(6), 408–409 (2008).
[CrossRef]

Logan, R. A.

D. S. Tsui, S. J. Allen, R. A. Logan, A. Kamgar, and S. N. Coppersmith, “High-frequency conductivity ijn silicon inversion layers: Drude relaxation, 2D plasmons and minigaps in a surface superlattice,” Surf. Sci. 73, 419–433 (1978).
[CrossRef]

S. J. Allen, D. C. Tsui, and R. A. Logan, “Observation of the two-dimensional plasmon in silicon inversion layers,” Phys. Rev. Lett. 38(17), 980–983 (1977).
[CrossRef]

Lusakowski, J.

W. Knap, M. Dyakonov, D. Coquillat, F. Teppe, N. Dyakonova, J. Łusakowski, K. Karpierz, M. Sakowicz, G. Valusis, D. Seliuta, I. Kasalynas, A. El Fatimy, Y. M. Meziani, and T. Otsuji, “Field effect transistors for terahertz detection: Physics and first imaging applications,” J. Infrared Millim. Terahertz Waves 30(12), 1319–1337 (2009).

W. Knap, J. Lusakowski, T. Parenty, S. Bollaert, A. Cappy, V. V. Popov, and M. S. Shur, “Terahertz emission by plasma waves in 60 nm gate high electron mobility transistors,” Appl. Phys. Lett. 84(13), 2331–2333 (2004).
[CrossRef]

Lyo, S. K.

E. A. Shaner, M. C. Wanke, A. D. Grine, S. K. Lyo, J. L. Reno, and S. J. Allen, “‘Enhanced responsivity in membrane isolated split-grating-gate plasmonic terahertz detectors,” Appl. Phys. Lett. 90(18), 181127 (2007).
[CrossRef]

Madjour, K.

A. El Fatimy, N. Dyakonova, Y. Meziani, T. Otsuji, W. Knap, S. Vandenbrouk, K. Madjour, D. Théron, C. Gaquiere, M. A. Poisson, S. Delage, P. Prystawko, and C. Skierbiszewski, “AlGaN/GaN high electron mobility transistors as a voltage-tunable room temperature terahertz sources,” J. Appl. Phys. 107(2), 024504 (2010).
[CrossRef]

Meziani, Y.

A. El Fatimy, N. Dyakonova, Y. Meziani, T. Otsuji, W. Knap, S. Vandenbrouk, K. Madjour, D. Théron, C. Gaquiere, M. A. Poisson, S. Delage, P. Prystawko, and C. Skierbiszewski, “AlGaN/GaN high electron mobility transistors as a voltage-tunable room temperature terahertz sources,” J. Appl. Phys. 107(2), 024504 (2010).
[CrossRef]

Meziani, Y. M.

D. Coquillat, S. Nadar, F. Teppe, N. Dyakonova, S. Boubanga-Tombet, W. Knap, T. Nishimura, T. Otsuji, Y. M. Meziani, G. M. Tsymbalov, and V. V. Popov, “Room temperature detection of sub-terahertz radiation in double-grating-gate transistors,” Opt. Express 18(6), 6024–6032 (2010).
[CrossRef] [PubMed]

W. Knap, M. Dyakonov, D. Coquillat, F. Teppe, N. Dyakonova, J. Łusakowski, K. Karpierz, M. Sakowicz, G. Valusis, D. Seliuta, I. Kasalynas, A. El Fatimy, Y. M. Meziani, and T. Otsuji, “Field effect transistors for terahertz detection: Physics and first imaging applications,” J. Infrared Millim. Terahertz Waves 30(12), 1319–1337 (2009).

Mounaix, P.

A. El Fatimy, J. C. Delagnes, A. Younus, E. Nguema, F. Teppe, W. Knap, E. Abraham, and P. Mounaix, “Plasma wave field effect transistor as a resonant detector for 1 terahertz imaging applications,” Opt. Commun. 282(15), 3055–3058 (2009).
[CrossRef]

Muravjov, A. V.

A. V. Muravjov, D. B. Veksler, V. V. Popov, O. V. Polischuk, N. Pala, X. Hu, R. Gaska, H. Saxena, R. E. Peale, and M. S. Shur, “Temperature dependence of plasmonic terahertz absorption in grating-gate gallium-nitride transistor structures,” Appl. Phys. Lett. 96(4), 042105 (2010).
[CrossRef]

Nadar, S.

Newman, E. H.

E. H. Newman and J. L. Blanchard, “TM scattering by an impedance sheet extension of a parabolic cylinder,” IEEE Trans. Antenn. Propag. 36(4), 527–534 (1988).
[CrossRef]

Nguema, E.

A. El Fatimy, J. C. Delagnes, A. Younus, E. Nguema, F. Teppe, W. Knap, E. Abraham, and P. Mounaix, “Plasma wave field effect transistor as a resonant detector for 1 terahertz imaging applications,” Opt. Commun. 282(15), 3055–3058 (2009).
[CrossRef]

Nishimura, T.

Ogawara, O.

T. Otsuji, M. Hanabe, and O. Ogawara, “Terahertz plasma wave resonance of two-dimensional electrons in InGaP/InGaAs/GaAs high-electron-mobility transistors,” Appl. Phys. Lett. 85(11), 2119–2121 (2004).
[CrossRef]

Otsuji, T.

A. El Fatimy, N. Dyakonova, Y. Meziani, T. Otsuji, W. Knap, S. Vandenbrouk, K. Madjour, D. Théron, C. Gaquiere, M. A. Poisson, S. Delage, P. Prystawko, and C. Skierbiszewski, “AlGaN/GaN high electron mobility transistors as a voltage-tunable room temperature terahertz sources,” J. Appl. Phys. 107(2), 024504 (2010).
[CrossRef]

D. Coquillat, S. Nadar, F. Teppe, N. Dyakonova, S. Boubanga-Tombet, W. Knap, T. Nishimura, T. Otsuji, Y. M. Meziani, G. M. Tsymbalov, and V. V. Popov, “Room temperature detection of sub-terahertz radiation in double-grating-gate transistors,” Opt. Express 18(6), 6024–6032 (2010).
[CrossRef] [PubMed]

W. Knap, M. Dyakonov, D. Coquillat, F. Teppe, N. Dyakonova, J. Łusakowski, K. Karpierz, M. Sakowicz, G. Valusis, D. Seliuta, I. Kasalynas, A. El Fatimy, Y. M. Meziani, and T. Otsuji, “Field effect transistors for terahertz detection: Physics and first imaging applications,” J. Infrared Millim. Terahertz Waves 30(12), 1319–1337 (2009).

V. Ryzhii, A. Satou, T. Otsuji, and M. S. Shur, “Plasma mechanisms of resonant terahertz detection in a two-dimensional electron channel with split gates,” J. Appl. Phys. 103(1), 014504 (2008).
[CrossRef]

T. Otsuji, M. Hanabe, and O. Ogawara, “Terahertz plasma wave resonance of two-dimensional electrons in InGaP/InGaAs/GaAs high-electron-mobility transistors,” Appl. Phys. Lett. 85(11), 2119–2121 (2004).
[CrossRef]

Pala, N.

A. V. Muravjov, D. B. Veksler, V. V. Popov, O. V. Polischuk, N. Pala, X. Hu, R. Gaska, H. Saxena, R. E. Peale, and M. S. Shur, “Temperature dependence of plasmonic terahertz absorption in grating-gate gallium-nitride transistor structures,” Appl. Phys. Lett. 96(4), 042105 (2010).
[CrossRef]

N. Pala, F. Teppe, D. Veksler, Y. Deng, M. S. Shur, and R. Gaska, “Nonresonant detection of terahertz radiation by silicon-on-insulator MOSFETs,” Electron. Lett. 41(7), 447–448 (2005).
[CrossRef]

Parenty, T.

W. Knap, J. Lusakowski, T. Parenty, S. Bollaert, A. Cappy, V. V. Popov, and M. S. Shur, “Terahertz emission by plasma waves in 60 nm gate high electron mobility transistors,” Appl. Phys. Lett. 84(13), 2331–2333 (2004).
[CrossRef]

Peale, R. E.

A. V. Muravjov, D. B. Veksler, V. V. Popov, O. V. Polischuk, N. Pala, X. Hu, R. Gaska, H. Saxena, R. E. Peale, and M. S. Shur, “Temperature dependence of plasmonic terahertz absorption in grating-gate gallium-nitride transistor structures,” Appl. Phys. Lett. 96(4), 042105 (2010).
[CrossRef]

Peralta, X. G.

V. V. Popov, O. V. Polischuk, T. V. Teperik, X. G. Peralta, S. J. Allen, N. J. M. Horing, and M. C. Wanke, “Absorption of terahertz radiation by plasmon modes in a grid-gated double-quantum-well field-effect transistor,” J. Appl. Phys. 94(5), 3556–3562 (2003).
[CrossRef]

X. G. Peralta, S. J. Allen, M. C. Wanke, N. E. Harff, J. A. Simmons, M. P. Lilly, J. L. Reno, P. J. Burke, and J. P. Eisenstein, “Terahertz photoconductivity and plasmon modes in double-quantum-well field-effect transistors,” Appl. Phys. Lett. 81(9), 1627–1629 (2002).
[CrossRef]

Poisson, M. A.

A. El Fatimy, N. Dyakonova, Y. Meziani, T. Otsuji, W. Knap, S. Vandenbrouk, K. Madjour, D. Théron, C. Gaquiere, M. A. Poisson, S. Delage, P. Prystawko, and C. Skierbiszewski, “AlGaN/GaN high electron mobility transistors as a voltage-tunable room temperature terahertz sources,” J. Appl. Phys. 107(2), 024504 (2010).
[CrossRef]

Polischuk, O. V.

A. V. Muravjov, D. B. Veksler, V. V. Popov, O. V. Polischuk, N. Pala, X. Hu, R. Gaska, H. Saxena, R. E. Peale, and M. S. Shur, “Temperature dependence of plasmonic terahertz absorption in grating-gate gallium-nitride transistor structures,” Appl. Phys. Lett. 96(4), 042105 (2010).
[CrossRef]

V. V. Popov, O. V. Polischuk, T. V. Teperik, X. G. Peralta, S. J. Allen, N. J. M. Horing, and M. C. Wanke, “Absorption of terahertz radiation by plasmon modes in a grid-gated double-quantum-well field-effect transistor,” J. Appl. Phys. 94(5), 3556–3562 (2003).
[CrossRef]

Popov, V. V.

A. V. Muravjov, D. B. Veksler, V. V. Popov, O. V. Polischuk, N. Pala, X. Hu, R. Gaska, H. Saxena, R. E. Peale, and M. S. Shur, “Temperature dependence of plasmonic terahertz absorption in grating-gate gallium-nitride transistor structures,” Appl. Phys. Lett. 96(4), 042105 (2010).
[CrossRef]

D. Coquillat, S. Nadar, F. Teppe, N. Dyakonova, S. Boubanga-Tombet, W. Knap, T. Nishimura, T. Otsuji, Y. M. Meziani, G. M. Tsymbalov, and V. V. Popov, “Room temperature detection of sub-terahertz radiation in double-grating-gate transistors,” Opt. Express 18(6), 6024–6032 (2010).
[CrossRef] [PubMed]

V. V. Popov, G. M. Tsymbalov, and M. S. Shur, “Plasma wave instability and amplification of terahertz radiation in field-effect-transistor arrays,” J. Phys. Condens. Matter 20(38), 384208 (2008).
[CrossRef] [PubMed]

V. V. Popov, M. S. Shur, G. M. Tsymbalov, and D. V. Fateev, “Higher-order plasmon resonances in GaN-based field-effect transistor arrays,” Int. J. High Speed Electron. Syst. 17(3), 557–566 (2007).
[CrossRef]

W. Knap, J. Lusakowski, T. Parenty, S. Bollaert, A. Cappy, V. V. Popov, and M. S. Shur, “Terahertz emission by plasma waves in 60 nm gate high electron mobility transistors,” Appl. Phys. Lett. 84(13), 2331–2333 (2004).
[CrossRef]

V. V. Popov, O. V. Polischuk, T. V. Teperik, X. G. Peralta, S. J. Allen, N. J. M. Horing, and M. C. Wanke, “Absorption of terahertz radiation by plasmon modes in a grid-gated double-quantum-well field-effect transistor,” J. Appl. Phys. 94(5), 3556–3562 (2003).
[CrossRef]

Prystawko, P.

A. El Fatimy, N. Dyakonova, Y. Meziani, T. Otsuji, W. Knap, S. Vandenbrouk, K. Madjour, D. Théron, C. Gaquiere, M. A. Poisson, S. Delage, P. Prystawko, and C. Skierbiszewski, “AlGaN/GaN high electron mobility transistors as a voltage-tunable room temperature terahertz sources,” J. Appl. Phys. 107(2), 024504 (2010).
[CrossRef]

Reno, J. L.

G. C. Dyer, J. D. Crossno, G. R. Aizin, E. A. Shaner, M. C. Wanke, J. L. Reno, and S. J. Allen, “A plasmonic terahertz detector with a monolithic hot electron bolometer,” J. Phys. Condens. Matter 21(19), 195803 (2009).
[CrossRef] [PubMed]

E. A. Shaner, M. C. Wanke, A. D. Grine, S. K. Lyo, J. L. Reno, and S. J. Allen, “‘Enhanced responsivity in membrane isolated split-grating-gate plasmonic terahertz detectors,” Appl. Phys. Lett. 90(18), 181127 (2007).
[CrossRef]

E. A. Shaner, A. D. Grine, M. C. Wanke, M. Lee, J. L. Reno, and S. J. Allen, “Far-infrared spectrum analysis using plasmon modes in a quantum-well transistor,” IEEE Photon. Technol. Lett. 18(18), 1925–1927 (2006).
[CrossRef]

E. A. Shaner, M. Lee, M. C. Wanke, A. D. Grine, J. L. Reno, and S. J. Allen, “Single-quantum-well grating-gated terahertz plasmon detectors,” Appl. Phys. Lett. 87(19), 193507 (2005).
[CrossRef]

X. G. Peralta, S. J. Allen, M. C. Wanke, N. E. Harff, J. A. Simmons, M. P. Lilly, J. L. Reno, P. J. Burke, and J. P. Eisenstein, “Terahertz photoconductivity and plasmon modes in double-quantum-well field-effect transistors,” Appl. Phys. Lett. 81(9), 1627–1629 (2002).
[CrossRef]

Roelens, Y.

A. El Fatimy, F. Teppe, N. Dyakonova, W. Knap, D. Seliuta, G. Valusis, A. Shcherepetov, Y. Roelens, S. Bollaert, A. Cappy, and S. Rumyantsev, “Resonant and voltage-tunable terahertz detection in InGaAs/InP nanometer transistors,” Appl. Phys. Lett. 89(13), 131926 (2006).
[CrossRef]

Roskos, H. G.

A. Lisauskas, W. von Spiegel, S. Boubanga-Tombet, A. El Fatimy, D. Coquillat, F. Teppe, N. Dyakonova, W. Knap, and H. G. Roskos, “Terahertz imaging with GaAs field-effect transistors,” Electron. Lett. 44(6), 408–409 (2008).
[CrossRef]

Rumyantsev, S.

A. El Fatimy, F. Teppe, N. Dyakonova, W. Knap, D. Seliuta, G. Valusis, A. Shcherepetov, Y. Roelens, S. Bollaert, A. Cappy, and S. Rumyantsev, “Resonant and voltage-tunable terahertz detection in InGaAs/InP nanometer transistors,” Appl. Phys. Lett. 89(13), 131926 (2006).
[CrossRef]

F. Teppe, W. Knap, D. Veksler, M. S. Shur, A. P. Dmitriev, V. Yu. Kachorovskii, and S. Rumyantsev, “Room-temperature plasma waves resonant detection of sub-terahertz radiation by nanometer field-effect transistor,” Appl. Phys. Lett. 87(5), 052107 (2005).
[CrossRef]

Ryzhii, M.

A. Satou, V. Ryzhii, I. Khmyrova, M. Ryzhii, and M. S. Shur, “Characteristics of a terahertz photomixer based on a high-electron mobility transistor structure with optical input through the ungated regions,” J. Appl. Phys. 95(4), 2084–2089 (2004).
[CrossRef]

Ryzhii, V.

V. Ryzhii, A. Satou, T. Otsuji, and M. S. Shur, “Plasma mechanisms of resonant terahertz detection in a two-dimensional electron channel with split gates,” J. Appl. Phys. 103(1), 014504 (2008).
[CrossRef]

A. Satou, V. Ryzhii, I. Khmyrova, M. Ryzhii, and M. S. Shur, “Characteristics of a terahertz photomixer based on a high-electron mobility transistor structure with optical input through the ungated regions,” J. Appl. Phys. 95(4), 2084–2089 (2004).
[CrossRef]

Sakowicz, M.

W. Knap, M. Dyakonov, D. Coquillat, F. Teppe, N. Dyakonova, J. Łusakowski, K. Karpierz, M. Sakowicz, G. Valusis, D. Seliuta, I. Kasalynas, A. El Fatimy, Y. M. Meziani, and T. Otsuji, “Field effect transistors for terahertz detection: Physics and first imaging applications,” J. Infrared Millim. Terahertz Waves 30(12), 1319–1337 (2009).

Satou, A.

V. Ryzhii, A. Satou, T. Otsuji, and M. S. Shur, “Plasma mechanisms of resonant terahertz detection in a two-dimensional electron channel with split gates,” J. Appl. Phys. 103(1), 014504 (2008).
[CrossRef]

A. Satou, V. Ryzhii, I. Khmyrova, M. Ryzhii, and M. S. Shur, “Characteristics of a terahertz photomixer based on a high-electron mobility transistor structure with optical input through the ungated regions,” J. Appl. Phys. 95(4), 2084–2089 (2004).
[CrossRef]

Saxena, H.

A. V. Muravjov, D. B. Veksler, V. V. Popov, O. V. Polischuk, N. Pala, X. Hu, R. Gaska, H. Saxena, R. E. Peale, and M. S. Shur, “Temperature dependence of plasmonic terahertz absorption in grating-gate gallium-nitride transistor structures,” Appl. Phys. Lett. 96(4), 042105 (2010).
[CrossRef]

Seliuta, D.

W. Knap, M. Dyakonov, D. Coquillat, F. Teppe, N. Dyakonova, J. Łusakowski, K. Karpierz, M. Sakowicz, G. Valusis, D. Seliuta, I. Kasalynas, A. El Fatimy, Y. M. Meziani, and T. Otsuji, “Field effect transistors for terahertz detection: Physics and first imaging applications,” J. Infrared Millim. Terahertz Waves 30(12), 1319–1337 (2009).

A. El Fatimy, F. Teppe, N. Dyakonova, W. Knap, D. Seliuta, G. Valusis, A. Shcherepetov, Y. Roelens, S. Bollaert, A. Cappy, and S. Rumyantsev, “Resonant and voltage-tunable terahertz detection in InGaAs/InP nanometer transistors,” Appl. Phys. Lett. 89(13), 131926 (2006).
[CrossRef]

Shaner, E. A.

G. C. Dyer, J. D. Crossno, G. R. Aizin, E. A. Shaner, M. C. Wanke, J. L. Reno, and S. J. Allen, “A plasmonic terahertz detector with a monolithic hot electron bolometer,” J. Phys. Condens. Matter 21(19), 195803 (2009).
[CrossRef] [PubMed]

E. A. Shaner, M. C. Wanke, A. D. Grine, S. K. Lyo, J. L. Reno, and S. J. Allen, “‘Enhanced responsivity in membrane isolated split-grating-gate plasmonic terahertz detectors,” Appl. Phys. Lett. 90(18), 181127 (2007).
[CrossRef]

E. A. Shaner, A. D. Grine, M. C. Wanke, M. Lee, J. L. Reno, and S. J. Allen, “Far-infrared spectrum analysis using plasmon modes in a quantum-well transistor,” IEEE Photon. Technol. Lett. 18(18), 1925–1927 (2006).
[CrossRef]

E. A. Shaner, M. Lee, M. C. Wanke, A. D. Grine, J. L. Reno, and S. J. Allen, “Single-quantum-well grating-gated terahertz plasmon detectors,” Appl. Phys. Lett. 87(19), 193507 (2005).
[CrossRef]

Shcherepetov, A.

A. El Fatimy, F. Teppe, N. Dyakonova, W. Knap, D. Seliuta, G. Valusis, A. Shcherepetov, Y. Roelens, S. Bollaert, A. Cappy, and S. Rumyantsev, “Resonant and voltage-tunable terahertz detection in InGaAs/InP nanometer transistors,” Appl. Phys. Lett. 89(13), 131926 (2006).
[CrossRef]

Shur, M.

M. Dyakonov and M. Shur, “Detection, mixing, and frequency multiplication of terahertz radiation by two-dimensional electron fluid,” IEEE Trans. on Electron, Devices 43(3), 380–387 (1996).
[CrossRef]

Shur, M. S.

A. V. Muravjov, D. B. Veksler, V. V. Popov, O. V. Polischuk, N. Pala, X. Hu, R. Gaska, H. Saxena, R. E. Peale, and M. S. Shur, “Temperature dependence of plasmonic terahertz absorption in grating-gate gallium-nitride transistor structures,” Appl. Phys. Lett. 96(4), 042105 (2010).
[CrossRef]

V. V. Popov, G. M. Tsymbalov, and M. S. Shur, “Plasma wave instability and amplification of terahertz radiation in field-effect-transistor arrays,” J. Phys. Condens. Matter 20(38), 384208 (2008).
[CrossRef] [PubMed]

V. Ryzhii, A. Satou, T. Otsuji, and M. S. Shur, “Plasma mechanisms of resonant terahertz detection in a two-dimensional electron channel with split gates,” J. Appl. Phys. 103(1), 014504 (2008).
[CrossRef]

W. J. Stillman and M. S. Shur, “Closing the gap: Plasma wave electronic terahertz detectors,” J. Nanoelectron. Optoelectron. 2(3), 209–221 (2007).
[CrossRef]

V. V. Popov, M. S. Shur, G. M. Tsymbalov, and D. V. Fateev, “Higher-order plasmon resonances in GaN-based field-effect transistor arrays,” Int. J. High Speed Electron. Syst. 17(3), 557–566 (2007).
[CrossRef]

F. Teppe, W. Knap, D. Veksler, M. S. Shur, A. P. Dmitriev, V. Yu. Kachorovskii, and S. Rumyantsev, “Room-temperature plasma waves resonant detection of sub-terahertz radiation by nanometer field-effect transistor,” Appl. Phys. Lett. 87(5), 052107 (2005).
[CrossRef]

N. Pala, F. Teppe, D. Veksler, Y. Deng, M. S. Shur, and R. Gaska, “Nonresonant detection of terahertz radiation by silicon-on-insulator MOSFETs,” Electron. Lett. 41(7), 447–448 (2005).
[CrossRef]

A. Satou, V. Ryzhii, I. Khmyrova, M. Ryzhii, and M. S. Shur, “Characteristics of a terahertz photomixer based on a high-electron mobility transistor structure with optical input through the ungated regions,” J. Appl. Phys. 95(4), 2084–2089 (2004).
[CrossRef]

W. Knap, J. Lusakowski, T. Parenty, S. Bollaert, A. Cappy, V. V. Popov, and M. S. Shur, “Terahertz emission by plasma waves in 60 nm gate high electron mobility transistors,” Appl. Phys. Lett. 84(13), 2331–2333 (2004).
[CrossRef]

Simmons, J. A.

X. G. Peralta, S. J. Allen, M. C. Wanke, N. E. Harff, J. A. Simmons, M. P. Lilly, J. L. Reno, P. J. Burke, and J. P. Eisenstein, “Terahertz photoconductivity and plasmon modes in double-quantum-well field-effect transistors,” Appl. Phys. Lett. 81(9), 1627–1629 (2002).
[CrossRef]

Skierbiszewski, C.

A. El Fatimy, N. Dyakonova, Y. Meziani, T. Otsuji, W. Knap, S. Vandenbrouk, K. Madjour, D. Théron, C. Gaquiere, M. A. Poisson, S. Delage, P. Prystawko, and C. Skierbiszewski, “AlGaN/GaN high electron mobility transistors as a voltage-tunable room temperature terahertz sources,” J. Appl. Phys. 107(2), 024504 (2010).
[CrossRef]

Stiles, P. J.

T. N. Theis, J. P. Kotthaus, and P. J. Stiles, “Two-dimensional magnetoplasmon in the silicon inversion layer,” Solid State Commun. 24(4), 273–277 (1977).
[CrossRef]

Stillman, W. J.

W. J. Stillman and M. S. Shur, “Closing the gap: Plasma wave electronic terahertz detectors,” J. Nanoelectron. Optoelectron. 2(3), 209–221 (2007).
[CrossRef]

Teperik, T. V.

V. V. Popov, O. V. Polischuk, T. V. Teperik, X. G. Peralta, S. J. Allen, N. J. M. Horing, and M. C. Wanke, “Absorption of terahertz radiation by plasmon modes in a grid-gated double-quantum-well field-effect transistor,” J. Appl. Phys. 94(5), 3556–3562 (2003).
[CrossRef]

Teppe, F.

D. Coquillat, S. Nadar, F. Teppe, N. Dyakonova, S. Boubanga-Tombet, W. Knap, T. Nishimura, T. Otsuji, Y. M. Meziani, G. M. Tsymbalov, and V. V. Popov, “Room temperature detection of sub-terahertz radiation in double-grating-gate transistors,” Opt. Express 18(6), 6024–6032 (2010).
[CrossRef] [PubMed]

A. El Fatimy, J. C. Delagnes, A. Younus, E. Nguema, F. Teppe, W. Knap, E. Abraham, and P. Mounaix, “Plasma wave field effect transistor as a resonant detector for 1 terahertz imaging applications,” Opt. Commun. 282(15), 3055–3058 (2009).
[CrossRef]

W. Knap, M. Dyakonov, D. Coquillat, F. Teppe, N. Dyakonova, J. Łusakowski, K. Karpierz, M. Sakowicz, G. Valusis, D. Seliuta, I. Kasalynas, A. El Fatimy, Y. M. Meziani, and T. Otsuji, “Field effect transistors for terahertz detection: Physics and first imaging applications,” J. Infrared Millim. Terahertz Waves 30(12), 1319–1337 (2009).

A. Lisauskas, W. von Spiegel, S. Boubanga-Tombet, A. El Fatimy, D. Coquillat, F. Teppe, N. Dyakonova, W. Knap, and H. G. Roskos, “Terahertz imaging with GaAs field-effect transistors,” Electron. Lett. 44(6), 408–409 (2008).
[CrossRef]

A. El Fatimy, F. Teppe, N. Dyakonova, W. Knap, D. Seliuta, G. Valusis, A. Shcherepetov, Y. Roelens, S. Bollaert, A. Cappy, and S. Rumyantsev, “Resonant and voltage-tunable terahertz detection in InGaAs/InP nanometer transistors,” Appl. Phys. Lett. 89(13), 131926 (2006).
[CrossRef]

F. Teppe, W. Knap, D. Veksler, M. S. Shur, A. P. Dmitriev, V. Yu. Kachorovskii, and S. Rumyantsev, “Room-temperature plasma waves resonant detection of sub-terahertz radiation by nanometer field-effect transistor,” Appl. Phys. Lett. 87(5), 052107 (2005).
[CrossRef]

N. Pala, F. Teppe, D. Veksler, Y. Deng, M. S. Shur, and R. Gaska, “Nonresonant detection of terahertz radiation by silicon-on-insulator MOSFETs,” Electron. Lett. 41(7), 447–448 (2005).
[CrossRef]

Theis, T. N.

T. N. Theis, J. P. Kotthaus, and P. J. Stiles, “Two-dimensional magnetoplasmon in the silicon inversion layer,” Solid State Commun. 24(4), 273–277 (1977).
[CrossRef]

Théron, D.

A. El Fatimy, N. Dyakonova, Y. Meziani, T. Otsuji, W. Knap, S. Vandenbrouk, K. Madjour, D. Théron, C. Gaquiere, M. A. Poisson, S. Delage, P. Prystawko, and C. Skierbiszewski, “AlGaN/GaN high electron mobility transistors as a voltage-tunable room temperature terahertz sources,” J. Appl. Phys. 107(2), 024504 (2010).
[CrossRef]

Tsui, D. C.

S. J. Allen, D. C. Tsui, and R. A. Logan, “Observation of the two-dimensional plasmon in silicon inversion layers,” Phys. Rev. Lett. 38(17), 980–983 (1977).
[CrossRef]

Tsui, D. S.

D. S. Tsui, S. J. Allen, R. A. Logan, A. Kamgar, and S. N. Coppersmith, “High-frequency conductivity ijn silicon inversion layers: Drude relaxation, 2D plasmons and minigaps in a surface superlattice,” Surf. Sci. 73, 419–433 (1978).
[CrossRef]

Tsymbalov, G. M.

D. Coquillat, S. Nadar, F. Teppe, N. Dyakonova, S. Boubanga-Tombet, W. Knap, T. Nishimura, T. Otsuji, Y. M. Meziani, G. M. Tsymbalov, and V. V. Popov, “Room temperature detection of sub-terahertz radiation in double-grating-gate transistors,” Opt. Express 18(6), 6024–6032 (2010).
[CrossRef] [PubMed]

V. V. Popov, G. M. Tsymbalov, and M. S. Shur, “Plasma wave instability and amplification of terahertz radiation in field-effect-transistor arrays,” J. Phys. Condens. Matter 20(38), 384208 (2008).
[CrossRef] [PubMed]

V. V. Popov, M. S. Shur, G. M. Tsymbalov, and D. V. Fateev, “Higher-order plasmon resonances in GaN-based field-effect transistor arrays,” Int. J. High Speed Electron. Syst. 17(3), 557–566 (2007).
[CrossRef]

Valusis, G.

W. Knap, M. Dyakonov, D. Coquillat, F. Teppe, N. Dyakonova, J. Łusakowski, K. Karpierz, M. Sakowicz, G. Valusis, D. Seliuta, I. Kasalynas, A. El Fatimy, Y. M. Meziani, and T. Otsuji, “Field effect transistors for terahertz detection: Physics and first imaging applications,” J. Infrared Millim. Terahertz Waves 30(12), 1319–1337 (2009).

A. El Fatimy, F. Teppe, N. Dyakonova, W. Knap, D. Seliuta, G. Valusis, A. Shcherepetov, Y. Roelens, S. Bollaert, A. Cappy, and S. Rumyantsev, “Resonant and voltage-tunable terahertz detection in InGaAs/InP nanometer transistors,” Appl. Phys. Lett. 89(13), 131926 (2006).
[CrossRef]

Vandenbrouk, S.

A. El Fatimy, N. Dyakonova, Y. Meziani, T. Otsuji, W. Knap, S. Vandenbrouk, K. Madjour, D. Théron, C. Gaquiere, M. A. Poisson, S. Delage, P. Prystawko, and C. Skierbiszewski, “AlGaN/GaN high electron mobility transistors as a voltage-tunable room temperature terahertz sources,” J. Appl. Phys. 107(2), 024504 (2010).
[CrossRef]

Veksler, D.

F. Teppe, W. Knap, D. Veksler, M. S. Shur, A. P. Dmitriev, V. Yu. Kachorovskii, and S. Rumyantsev, “Room-temperature plasma waves resonant detection of sub-terahertz radiation by nanometer field-effect transistor,” Appl. Phys. Lett. 87(5), 052107 (2005).
[CrossRef]

N. Pala, F. Teppe, D. Veksler, Y. Deng, M. S. Shur, and R. Gaska, “Nonresonant detection of terahertz radiation by silicon-on-insulator MOSFETs,” Electron. Lett. 41(7), 447–448 (2005).
[CrossRef]

Veksler, D. B.

A. V. Muravjov, D. B. Veksler, V. V. Popov, O. V. Polischuk, N. Pala, X. Hu, R. Gaska, H. Saxena, R. E. Peale, and M. S. Shur, “Temperature dependence of plasmonic terahertz absorption in grating-gate gallium-nitride transistor structures,” Appl. Phys. Lett. 96(4), 042105 (2010).
[CrossRef]

von Spiegel, W.

A. Lisauskas, W. von Spiegel, S. Boubanga-Tombet, A. El Fatimy, D. Coquillat, F. Teppe, N. Dyakonova, W. Knap, and H. G. Roskos, “Terahertz imaging with GaAs field-effect transistors,” Electron. Lett. 44(6), 408–409 (2008).
[CrossRef]

Wanke, M. C.

G. C. Dyer, J. D. Crossno, G. R. Aizin, E. A. Shaner, M. C. Wanke, J. L. Reno, and S. J. Allen, “A plasmonic terahertz detector with a monolithic hot electron bolometer,” J. Phys. Condens. Matter 21(19), 195803 (2009).
[CrossRef] [PubMed]

E. A. Shaner, M. C. Wanke, A. D. Grine, S. K. Lyo, J. L. Reno, and S. J. Allen, “‘Enhanced responsivity in membrane isolated split-grating-gate plasmonic terahertz detectors,” Appl. Phys. Lett. 90(18), 181127 (2007).
[CrossRef]

E. A. Shaner, A. D. Grine, M. C. Wanke, M. Lee, J. L. Reno, and S. J. Allen, “Far-infrared spectrum analysis using plasmon modes in a quantum-well transistor,” IEEE Photon. Technol. Lett. 18(18), 1925–1927 (2006).
[CrossRef]

E. A. Shaner, M. Lee, M. C. Wanke, A. D. Grine, J. L. Reno, and S. J. Allen, “Single-quantum-well grating-gated terahertz plasmon detectors,” Appl. Phys. Lett. 87(19), 193507 (2005).
[CrossRef]

V. V. Popov, O. V. Polischuk, T. V. Teperik, X. G. Peralta, S. J. Allen, N. J. M. Horing, and M. C. Wanke, “Absorption of terahertz radiation by plasmon modes in a grid-gated double-quantum-well field-effect transistor,” J. Appl. Phys. 94(5), 3556–3562 (2003).
[CrossRef]

X. G. Peralta, S. J. Allen, M. C. Wanke, N. E. Harff, J. A. Simmons, M. P. Lilly, J. L. Reno, P. J. Burke, and J. P. Eisenstein, “Terahertz photoconductivity and plasmon modes in double-quantum-well field-effect transistors,” Appl. Phys. Lett. 81(9), 1627–1629 (2002).
[CrossRef]

Younus, A.

A. El Fatimy, J. C. Delagnes, A. Younus, E. Nguema, F. Teppe, W. Knap, E. Abraham, and P. Mounaix, “Plasma wave field effect transistor as a resonant detector for 1 terahertz imaging applications,” Opt. Commun. 282(15), 3055–3058 (2009).
[CrossRef]

Appl. Phys. Lett. (8)

W. Knap, J. Lusakowski, T. Parenty, S. Bollaert, A. Cappy, V. V. Popov, and M. S. Shur, “Terahertz emission by plasma waves in 60 nm gate high electron mobility transistors,” Appl. Phys. Lett. 84(13), 2331–2333 (2004).
[CrossRef]

F. Teppe, W. Knap, D. Veksler, M. S. Shur, A. P. Dmitriev, V. Yu. Kachorovskii, and S. Rumyantsev, “Room-temperature plasma waves resonant detection of sub-terahertz radiation by nanometer field-effect transistor,” Appl. Phys. Lett. 87(5), 052107 (2005).
[CrossRef]

A. El Fatimy, F. Teppe, N. Dyakonova, W. Knap, D. Seliuta, G. Valusis, A. Shcherepetov, Y. Roelens, S. Bollaert, A. Cappy, and S. Rumyantsev, “Resonant and voltage-tunable terahertz detection in InGaAs/InP nanometer transistors,” Appl. Phys. Lett. 89(13), 131926 (2006).
[CrossRef]

X. G. Peralta, S. J. Allen, M. C. Wanke, N. E. Harff, J. A. Simmons, M. P. Lilly, J. L. Reno, P. J. Burke, and J. P. Eisenstein, “Terahertz photoconductivity and plasmon modes in double-quantum-well field-effect transistors,” Appl. Phys. Lett. 81(9), 1627–1629 (2002).
[CrossRef]

T. Otsuji, M. Hanabe, and O. Ogawara, “Terahertz plasma wave resonance of two-dimensional electrons in InGaP/InGaAs/GaAs high-electron-mobility transistors,” Appl. Phys. Lett. 85(11), 2119–2121 (2004).
[CrossRef]

E. A. Shaner, M. Lee, M. C. Wanke, A. D. Grine, J. L. Reno, and S. J. Allen, “Single-quantum-well grating-gated terahertz plasmon detectors,” Appl. Phys. Lett. 87(19), 193507 (2005).
[CrossRef]

A. V. Muravjov, D. B. Veksler, V. V. Popov, O. V. Polischuk, N. Pala, X. Hu, R. Gaska, H. Saxena, R. E. Peale, and M. S. Shur, “Temperature dependence of plasmonic terahertz absorption in grating-gate gallium-nitride transistor structures,” Appl. Phys. Lett. 96(4), 042105 (2010).
[CrossRef]

E. A. Shaner, M. C. Wanke, A. D. Grine, S. K. Lyo, J. L. Reno, and S. J. Allen, “‘Enhanced responsivity in membrane isolated split-grating-gate plasmonic terahertz detectors,” Appl. Phys. Lett. 90(18), 181127 (2007).
[CrossRef]

Electron. Lett. (2)

A. Lisauskas, W. von Spiegel, S. Boubanga-Tombet, A. El Fatimy, D. Coquillat, F. Teppe, N. Dyakonova, W. Knap, and H. G. Roskos, “Terahertz imaging with GaAs field-effect transistors,” Electron. Lett. 44(6), 408–409 (2008).
[CrossRef]

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Other (1)

Equation (3) is approximately valid also for a bulk substrate of finite thickness with a bevel back surface, in which the interference effects in the substrate are eliminated.

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Figures (1)

Fig. 1
Fig. 1

Calculated terahertz absorption spectra of the grating-gated 2DEC on (a) a bulk substrate and on (b) the membrane substrate for the gate voltage value – 1 V for L = 4 µm, h = 4 µm, d = 0.4 μm, ε = 12.8, m* = 0.069m 0, and τ = 8.5×10−12 s. The insets in panels (a) and (b) show schematic views of the grating-gate structures on bulk and membrane substrates, respectively.

Equations (9)

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Y ( ω ) = n = 0 Y n ( ω ) = i σ ¯ 0 n = 0 2 β n 2 ω γ e ω 2 ω p n 2 + 2 i γ e ω ,
Y 0 ( ω ) = i σ ¯ 0 2 γ e ω + 2 i γ e .
Y ( ω ) Y n ( ω ) i σ ¯ 0 β n 2 γ e ω ω p n + i γ e .
A n ( ω ) = 2 γ e γ r n ( 1 R 0 ) ( ω ω p n ) 2 + ( γ e + γ r n ) 2 ,
R 0 = ( ε 1 ) 2 ( ε + 1 ) 2
γ r n = e 2 N ¯ s 2 m Z 0 β n 2 ( ε + 1 )
A r e s = 2 γ e γ r n ( γ e + γ r n ) 2 ( 1 R 0 )
A r e s 2 γ r n γ e ( 1 R 0 ) .
Y e f f ( ω ) = Y ( ω ) i Z 0 k 0 h ( ε 1 ) ,

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