Abstract

We report a vertical p-i-n thin-film germanium photodetector integrated on 3μm thick large core silicon-on-insulator (SOI) waveguides. The device demonstrates very high external responsivity due to the low fiber coupling loss to the large core waveguides. The germanium width and thickness are carefully designed to achieve high responsivity yet retain high-speed performance. Even with fiber coupling loss included, the device has demonstrated greater than 0.7A/W external responsivity at 1550nm for TM polarization and 0.5A/W for TE polarization. A low dark current of 0.2μA at −0.5V bias is reported. 3dB bandwidths of 12GHz and 8.3GHz at −2.5V bias are also reported for 100μm and 200μm long devices, respectively. The device can cover the communication wavelength spectrum up to 1620nm with a relatively flat responsivity of >0.5A/W. Further studies suggest that with a modified design the device is capable of achieving 1A/W external responsivity for both TE and TM polarizations and greater than 30GHz bandwidth.

©2010 Optical Society of America

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  1. L. C. Kimerling, D. Ahn, A. B. Apsel, M. Beals, D. Carothers, Y.-K. Chen, T. Conway, D. M. Gill, M. Grove, C.-Y. Hong, M. Lipson, J. Liu, J. Michel, D. Pan, S. S. Patel, A. T. Pomerene, M. Rasras, D. K. Sparacin, K.-Y. Tu, A. E. White, and C. W. Wong, “Electronic-photonic integrated circuits on the CMOS platform,” Proc. SPIE 6125, 612502 (2006).
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  5. L. Vivien, J. Osmond, J.-M. Fedeli, D. Marris-Morini, P. Crozat, J.-F. Damlencourt, E. Cassan, Y. Lecunff, and S. Laval, “42 GHz p.i.n Germanium photodetector integrated in a silicon-on-inculator waveguide,” Opt. Express 16, 6252 (2008).
  6. J. Wang, W. Y. Loh, K. T. Chua, H. Zang, Y. Z. Xiong, S. M. F. Tan, M. B. Yu, S. J. Lee, G. Q. Lo, and D. L. Kwong, “Low-voltage high-speed (18GHz/1V) evanescent-coupled thin-file-Ge lateral PIN photodetectors integrated on Si waveguide,” IEEE Photon. Technol. Lett. 20(17), 1485–1487 (2008).
    [Crossref]
  7. T. Yin, R. Cohen, M. M. Morse, G. Sarid, Y. Chetrit, D. Rubin, and M. J. Paniccia, “31 GHz Ge n-i-p waveguide photodetectors on Silicon-on-Insulator substrate,” Opt. Express 15(21), 13965–13971 (2007).
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    [Crossref] [PubMed]
  9. G. Dehlinger, S. J. Koester, J. D. Schaub, J. O. Chu, Q. C. Ouyang, and A. Grill, “High-speed Germanium-on-SOI lateral PIN photodiodes,” IEEE Photon. Technol. Lett. 16(11), 2547–2549 (2004).
    [Crossref]
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    [Crossref]
  11. N.-N. Feng, D. Feng, H. Liang, W. Qian, C.-C. Kung, J. Fong, and M. Asghari, “Low-loss polarization-insensitive Silicon-on-insulator-based WDM filter for triplexer applications,” IEEE Photon. Technol. Lett. 20(23), 1968–1970 (2008).
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2009 (1)

2008 (3)

L. Vivien, J. Osmond, J.-M. Fedeli, D. Marris-Morini, P. Crozat, J.-F. Damlencourt, E. Cassan, Y. Lecunff, and S. Laval, “42 GHz p.i.n Germanium photodetector integrated in a silicon-on-inculator waveguide,” Opt. Express 16, 6252 (2008).

J. Wang, W. Y. Loh, K. T. Chua, H. Zang, Y. Z. Xiong, S. M. F. Tan, M. B. Yu, S. J. Lee, G. Q. Lo, and D. L. Kwong, “Low-voltage high-speed (18GHz/1V) evanescent-coupled thin-file-Ge lateral PIN photodetectors integrated on Si waveguide,” IEEE Photon. Technol. Lett. 20(17), 1485–1487 (2008).
[Crossref]

N.-N. Feng, D. Feng, H. Liang, W. Qian, C.-C. Kung, J. Fong, and M. Asghari, “Low-loss polarization-insensitive Silicon-on-insulator-based WDM filter for triplexer applications,” IEEE Photon. Technol. Lett. 20(23), 1968–1970 (2008).
[Crossref]

2007 (2)

2006 (2)

L. C. Kimerling, D. Ahn, A. B. Apsel, M. Beals, D. Carothers, Y.-K. Chen, T. Conway, D. M. Gill, M. Grove, C.-Y. Hong, M. Lipson, J. Liu, J. Michel, D. Pan, S. S. Patel, A. T. Pomerene, M. Rasras, D. K. Sparacin, K.-Y. Tu, A. E. White, and C. W. Wong, “Electronic-photonic integrated circuits on the CMOS platform,” Proc. SPIE 6125, 612502 (2006).
[Crossref]

S. Bidnyk, D. Feng, A. Balakrishnan, M. Pearson, M. Gao, H. Liang, W. Qian, C.-C. Kung, J. Fong, J. Yin, and M. Asghari, “Jeremy Yin, and M. Asghari, “Silicon-on-insulator-based planar circuit for passive optical network applications,” IEEE Photon. Technol. Lett. 18(22), 2392–2394 (2006).
[Crossref]

2004 (1)

G. Dehlinger, S. J. Koester, J. D. Schaub, J. O. Chu, Q. C. Ouyang, and A. Grill, “High-speed Germanium-on-SOI lateral PIN photodiodes,” IEEE Photon. Technol. Lett. 16(11), 2547–2549 (2004).
[Crossref]

Ahn, D.

D. Ahn, C.-Y. Hong, J. Liu, W. Giziewicz, M. Beals, L. C. Kimerling, J. Michel, J. Chen, and F. X. Kärtner, “High performance, waveguide integrated Ge photodetectors,” Opt. Express 15(7), 3916–3921 (2007).
[Crossref] [PubMed]

L. C. Kimerling, D. Ahn, A. B. Apsel, M. Beals, D. Carothers, Y.-K. Chen, T. Conway, D. M. Gill, M. Grove, C.-Y. Hong, M. Lipson, J. Liu, J. Michel, D. Pan, S. S. Patel, A. T. Pomerene, M. Rasras, D. K. Sparacin, K.-Y. Tu, A. E. White, and C. W. Wong, “Electronic-photonic integrated circuits on the CMOS platform,” Proc. SPIE 6125, 612502 (2006).
[Crossref]

Apsel, A. B.

L. C. Kimerling, D. Ahn, A. B. Apsel, M. Beals, D. Carothers, Y.-K. Chen, T. Conway, D. M. Gill, M. Grove, C.-Y. Hong, M. Lipson, J. Liu, J. Michel, D. Pan, S. S. Patel, A. T. Pomerene, M. Rasras, D. K. Sparacin, K.-Y. Tu, A. E. White, and C. W. Wong, “Electronic-photonic integrated circuits on the CMOS platform,” Proc. SPIE 6125, 612502 (2006).
[Crossref]

Asghari, M.

N.-N. Feng, D. Feng, H. Liang, W. Qian, C.-C. Kung, J. Fong, and M. Asghari, “Low-loss polarization-insensitive Silicon-on-insulator-based WDM filter for triplexer applications,” IEEE Photon. Technol. Lett. 20(23), 1968–1970 (2008).
[Crossref]

S. Bidnyk, D. Feng, A. Balakrishnan, M. Pearson, M. Gao, H. Liang, W. Qian, C.-C. Kung, J. Fong, J. Yin, and M. Asghari, “Jeremy Yin, and M. Asghari, “Silicon-on-insulator-based planar circuit for passive optical network applications,” IEEE Photon. Technol. Lett. 18(22), 2392–2394 (2006).
[Crossref]

Balakrishnan, A.

S. Bidnyk, D. Feng, A. Balakrishnan, M. Pearson, M. Gao, H. Liang, W. Qian, C.-C. Kung, J. Fong, J. Yin, and M. Asghari, “Jeremy Yin, and M. Asghari, “Silicon-on-insulator-based planar circuit for passive optical network applications,” IEEE Photon. Technol. Lett. 18(22), 2392–2394 (2006).
[Crossref]

Beals, M.

D. Ahn, C.-Y. Hong, J. Liu, W. Giziewicz, M. Beals, L. C. Kimerling, J. Michel, J. Chen, and F. X. Kärtner, “High performance, waveguide integrated Ge photodetectors,” Opt. Express 15(7), 3916–3921 (2007).
[Crossref] [PubMed]

L. C. Kimerling, D. Ahn, A. B. Apsel, M. Beals, D. Carothers, Y.-K. Chen, T. Conway, D. M. Gill, M. Grove, C.-Y. Hong, M. Lipson, J. Liu, J. Michel, D. Pan, S. S. Patel, A. T. Pomerene, M. Rasras, D. K. Sparacin, K.-Y. Tu, A. E. White, and C. W. Wong, “Electronic-photonic integrated circuits on the CMOS platform,” Proc. SPIE 6125, 612502 (2006).
[Crossref]

Bidnyk, S.

S. Bidnyk, D. Feng, A. Balakrishnan, M. Pearson, M. Gao, H. Liang, W. Qian, C.-C. Kung, J. Fong, J. Yin, and M. Asghari, “Jeremy Yin, and M. Asghari, “Silicon-on-insulator-based planar circuit for passive optical network applications,” IEEE Photon. Technol. Lett. 18(22), 2392–2394 (2006).
[Crossref]

Carothers, D.

L. C. Kimerling, D. Ahn, A. B. Apsel, M. Beals, D. Carothers, Y.-K. Chen, T. Conway, D. M. Gill, M. Grove, C.-Y. Hong, M. Lipson, J. Liu, J. Michel, D. Pan, S. S. Patel, A. T. Pomerene, M. Rasras, D. K. Sparacin, K.-Y. Tu, A. E. White, and C. W. Wong, “Electronic-photonic integrated circuits on the CMOS platform,” Proc. SPIE 6125, 612502 (2006).
[Crossref]

Cassan, E.

L. Vivien, J. Osmond, J.-M. Fedeli, D. Marris-Morini, P. Crozat, J.-F. Damlencourt, E. Cassan, Y. Lecunff, and S. Laval, “42 GHz p.i.n Germanium photodetector integrated in a silicon-on-inculator waveguide,” Opt. Express 16, 6252 (2008).

Chen, J.

Chen, L.

Chen, Y.-K.

L. C. Kimerling, D. Ahn, A. B. Apsel, M. Beals, D. Carothers, Y.-K. Chen, T. Conway, D. M. Gill, M. Grove, C.-Y. Hong, M. Lipson, J. Liu, J. Michel, D. Pan, S. S. Patel, A. T. Pomerene, M. Rasras, D. K. Sparacin, K.-Y. Tu, A. E. White, and C. W. Wong, “Electronic-photonic integrated circuits on the CMOS platform,” Proc. SPIE 6125, 612502 (2006).
[Crossref]

Chetrit, Y.

Chu, J. O.

G. Dehlinger, S. J. Koester, J. D. Schaub, J. O. Chu, Q. C. Ouyang, and A. Grill, “High-speed Germanium-on-SOI lateral PIN photodiodes,” IEEE Photon. Technol. Lett. 16(11), 2547–2549 (2004).
[Crossref]

Chua, K. T.

J. Wang, W. Y. Loh, K. T. Chua, H. Zang, Y. Z. Xiong, S. M. F. Tan, M. B. Yu, S. J. Lee, G. Q. Lo, and D. L. Kwong, “Low-voltage high-speed (18GHz/1V) evanescent-coupled thin-file-Ge lateral PIN photodetectors integrated on Si waveguide,” IEEE Photon. Technol. Lett. 20(17), 1485–1487 (2008).
[Crossref]

Cohen, R.

Conway, T.

L. C. Kimerling, D. Ahn, A. B. Apsel, M. Beals, D. Carothers, Y.-K. Chen, T. Conway, D. M. Gill, M. Grove, C.-Y. Hong, M. Lipson, J. Liu, J. Michel, D. Pan, S. S. Patel, A. T. Pomerene, M. Rasras, D. K. Sparacin, K.-Y. Tu, A. E. White, and C. W. Wong, “Electronic-photonic integrated circuits on the CMOS platform,” Proc. SPIE 6125, 612502 (2006).
[Crossref]

Crozat, P.

L. Vivien, J. Osmond, J.-M. Fedeli, D. Marris-Morini, P. Crozat, J.-F. Damlencourt, E. Cassan, Y. Lecunff, and S. Laval, “42 GHz p.i.n Germanium photodetector integrated in a silicon-on-inculator waveguide,” Opt. Express 16, 6252 (2008).

Damlencourt, J.-F.

L. Vivien, J. Osmond, J.-M. Fedeli, D. Marris-Morini, P. Crozat, J.-F. Damlencourt, E. Cassan, Y. Lecunff, and S. Laval, “42 GHz p.i.n Germanium photodetector integrated in a silicon-on-inculator waveguide,” Opt. Express 16, 6252 (2008).

Dehlinger, G.

G. Dehlinger, S. J. Koester, J. D. Schaub, J. O. Chu, Q. C. Ouyang, and A. Grill, “High-speed Germanium-on-SOI lateral PIN photodiodes,” IEEE Photon. Technol. Lett. 16(11), 2547–2549 (2004).
[Crossref]

Fedeli, J.-M.

L. Vivien, J. Osmond, J.-M. Fedeli, D. Marris-Morini, P. Crozat, J.-F. Damlencourt, E. Cassan, Y. Lecunff, and S. Laval, “42 GHz p.i.n Germanium photodetector integrated in a silicon-on-inculator waveguide,” Opt. Express 16, 6252 (2008).

Feng, D.

N.-N. Feng, D. Feng, H. Liang, W. Qian, C.-C. Kung, J. Fong, and M. Asghari, “Low-loss polarization-insensitive Silicon-on-insulator-based WDM filter for triplexer applications,” IEEE Photon. Technol. Lett. 20(23), 1968–1970 (2008).
[Crossref]

S. Bidnyk, D. Feng, A. Balakrishnan, M. Pearson, M. Gao, H. Liang, W. Qian, C.-C. Kung, J. Fong, J. Yin, and M. Asghari, “Jeremy Yin, and M. Asghari, “Silicon-on-insulator-based planar circuit for passive optical network applications,” IEEE Photon. Technol. Lett. 18(22), 2392–2394 (2006).
[Crossref]

Feng, N.-N.

N.-N. Feng, D. Feng, H. Liang, W. Qian, C.-C. Kung, J. Fong, and M. Asghari, “Low-loss polarization-insensitive Silicon-on-insulator-based WDM filter for triplexer applications,” IEEE Photon. Technol. Lett. 20(23), 1968–1970 (2008).
[Crossref]

Fong, J.

N.-N. Feng, D. Feng, H. Liang, W. Qian, C.-C. Kung, J. Fong, and M. Asghari, “Low-loss polarization-insensitive Silicon-on-insulator-based WDM filter for triplexer applications,” IEEE Photon. Technol. Lett. 20(23), 1968–1970 (2008).
[Crossref]

S. Bidnyk, D. Feng, A. Balakrishnan, M. Pearson, M. Gao, H. Liang, W. Qian, C.-C. Kung, J. Fong, J. Yin, and M. Asghari, “Jeremy Yin, and M. Asghari, “Silicon-on-insulator-based planar circuit for passive optical network applications,” IEEE Photon. Technol. Lett. 18(22), 2392–2394 (2006).
[Crossref]

Gao, M.

S. Bidnyk, D. Feng, A. Balakrishnan, M. Pearson, M. Gao, H. Liang, W. Qian, C.-C. Kung, J. Fong, J. Yin, and M. Asghari, “Jeremy Yin, and M. Asghari, “Silicon-on-insulator-based planar circuit for passive optical network applications,” IEEE Photon. Technol. Lett. 18(22), 2392–2394 (2006).
[Crossref]

Gill, D. M.

L. C. Kimerling, D. Ahn, A. B. Apsel, M. Beals, D. Carothers, Y.-K. Chen, T. Conway, D. M. Gill, M. Grove, C.-Y. Hong, M. Lipson, J. Liu, J. Michel, D. Pan, S. S. Patel, A. T. Pomerene, M. Rasras, D. K. Sparacin, K.-Y. Tu, A. E. White, and C. W. Wong, “Electronic-photonic integrated circuits on the CMOS platform,” Proc. SPIE 6125, 612502 (2006).
[Crossref]

Giziewicz, W.

Grill, A.

G. Dehlinger, S. J. Koester, J. D. Schaub, J. O. Chu, Q. C. Ouyang, and A. Grill, “High-speed Germanium-on-SOI lateral PIN photodiodes,” IEEE Photon. Technol. Lett. 16(11), 2547–2549 (2004).
[Crossref]

Grove, M.

L. C. Kimerling, D. Ahn, A. B. Apsel, M. Beals, D. Carothers, Y.-K. Chen, T. Conway, D. M. Gill, M. Grove, C.-Y. Hong, M. Lipson, J. Liu, J. Michel, D. Pan, S. S. Patel, A. T. Pomerene, M. Rasras, D. K. Sparacin, K.-Y. Tu, A. E. White, and C. W. Wong, “Electronic-photonic integrated circuits on the CMOS platform,” Proc. SPIE 6125, 612502 (2006).
[Crossref]

Hong, C.-Y.

D. Ahn, C.-Y. Hong, J. Liu, W. Giziewicz, M. Beals, L. C. Kimerling, J. Michel, J. Chen, and F. X. Kärtner, “High performance, waveguide integrated Ge photodetectors,” Opt. Express 15(7), 3916–3921 (2007).
[Crossref] [PubMed]

L. C. Kimerling, D. Ahn, A. B. Apsel, M. Beals, D. Carothers, Y.-K. Chen, T. Conway, D. M. Gill, M. Grove, C.-Y. Hong, M. Lipson, J. Liu, J. Michel, D. Pan, S. S. Patel, A. T. Pomerene, M. Rasras, D. K. Sparacin, K.-Y. Tu, A. E. White, and C. W. Wong, “Electronic-photonic integrated circuits on the CMOS platform,” Proc. SPIE 6125, 612502 (2006).
[Crossref]

Kärtner, F. X.

Kimerling, L. C.

D. Ahn, C.-Y. Hong, J. Liu, W. Giziewicz, M. Beals, L. C. Kimerling, J. Michel, J. Chen, and F. X. Kärtner, “High performance, waveguide integrated Ge photodetectors,” Opt. Express 15(7), 3916–3921 (2007).
[Crossref] [PubMed]

L. C. Kimerling, D. Ahn, A. B. Apsel, M. Beals, D. Carothers, Y.-K. Chen, T. Conway, D. M. Gill, M. Grove, C.-Y. Hong, M. Lipson, J. Liu, J. Michel, D. Pan, S. S. Patel, A. T. Pomerene, M. Rasras, D. K. Sparacin, K.-Y. Tu, A. E. White, and C. W. Wong, “Electronic-photonic integrated circuits on the CMOS platform,” Proc. SPIE 6125, 612502 (2006).
[Crossref]

Koester, S. J.

G. Dehlinger, S. J. Koester, J. D. Schaub, J. O. Chu, Q. C. Ouyang, and A. Grill, “High-speed Germanium-on-SOI lateral PIN photodiodes,” IEEE Photon. Technol. Lett. 16(11), 2547–2549 (2004).
[Crossref]

Kung, C.-C.

N.-N. Feng, D. Feng, H. Liang, W. Qian, C.-C. Kung, J. Fong, and M. Asghari, “Low-loss polarization-insensitive Silicon-on-insulator-based WDM filter for triplexer applications,” IEEE Photon. Technol. Lett. 20(23), 1968–1970 (2008).
[Crossref]

S. Bidnyk, D. Feng, A. Balakrishnan, M. Pearson, M. Gao, H. Liang, W. Qian, C.-C. Kung, J. Fong, J. Yin, and M. Asghari, “Jeremy Yin, and M. Asghari, “Silicon-on-insulator-based planar circuit for passive optical network applications,” IEEE Photon. Technol. Lett. 18(22), 2392–2394 (2006).
[Crossref]

Kwong, D. L.

J. Wang, W. Y. Loh, K. T. Chua, H. Zang, Y. Z. Xiong, S. M. F. Tan, M. B. Yu, S. J. Lee, G. Q. Lo, and D. L. Kwong, “Low-voltage high-speed (18GHz/1V) evanescent-coupled thin-file-Ge lateral PIN photodetectors integrated on Si waveguide,” IEEE Photon. Technol. Lett. 20(17), 1485–1487 (2008).
[Crossref]

Laval, S.

L. Vivien, J. Osmond, J.-M. Fedeli, D. Marris-Morini, P. Crozat, J.-F. Damlencourt, E. Cassan, Y. Lecunff, and S. Laval, “42 GHz p.i.n Germanium photodetector integrated in a silicon-on-inculator waveguide,” Opt. Express 16, 6252 (2008).

Lecunff, Y.

L. Vivien, J. Osmond, J.-M. Fedeli, D. Marris-Morini, P. Crozat, J.-F. Damlencourt, E. Cassan, Y. Lecunff, and S. Laval, “42 GHz p.i.n Germanium photodetector integrated in a silicon-on-inculator waveguide,” Opt. Express 16, 6252 (2008).

Lee, S. J.

J. Wang, W. Y. Loh, K. T. Chua, H. Zang, Y. Z. Xiong, S. M. F. Tan, M. B. Yu, S. J. Lee, G. Q. Lo, and D. L. Kwong, “Low-voltage high-speed (18GHz/1V) evanescent-coupled thin-file-Ge lateral PIN photodetectors integrated on Si waveguide,” IEEE Photon. Technol. Lett. 20(17), 1485–1487 (2008).
[Crossref]

Liang, H.

N.-N. Feng, D. Feng, H. Liang, W. Qian, C.-C. Kung, J. Fong, and M. Asghari, “Low-loss polarization-insensitive Silicon-on-insulator-based WDM filter for triplexer applications,” IEEE Photon. Technol. Lett. 20(23), 1968–1970 (2008).
[Crossref]

S. Bidnyk, D. Feng, A. Balakrishnan, M. Pearson, M. Gao, H. Liang, W. Qian, C.-C. Kung, J. Fong, J. Yin, and M. Asghari, “Jeremy Yin, and M. Asghari, “Silicon-on-insulator-based planar circuit for passive optical network applications,” IEEE Photon. Technol. Lett. 18(22), 2392–2394 (2006).
[Crossref]

Lipson, M.

L. Chen and M. Lipson, “Ultra-low capacitance and high speed germanium photodetectors on silicon,” Opt. Express 17(10), 7901–7906 (2009).
[Crossref] [PubMed]

L. C. Kimerling, D. Ahn, A. B. Apsel, M. Beals, D. Carothers, Y.-K. Chen, T. Conway, D. M. Gill, M. Grove, C.-Y. Hong, M. Lipson, J. Liu, J. Michel, D. Pan, S. S. Patel, A. T. Pomerene, M. Rasras, D. K. Sparacin, K.-Y. Tu, A. E. White, and C. W. Wong, “Electronic-photonic integrated circuits on the CMOS platform,” Proc. SPIE 6125, 612502 (2006).
[Crossref]

Liu, J.

D. Ahn, C.-Y. Hong, J. Liu, W. Giziewicz, M. Beals, L. C. Kimerling, J. Michel, J. Chen, and F. X. Kärtner, “High performance, waveguide integrated Ge photodetectors,” Opt. Express 15(7), 3916–3921 (2007).
[Crossref] [PubMed]

L. C. Kimerling, D. Ahn, A. B. Apsel, M. Beals, D. Carothers, Y.-K. Chen, T. Conway, D. M. Gill, M. Grove, C.-Y. Hong, M. Lipson, J. Liu, J. Michel, D. Pan, S. S. Patel, A. T. Pomerene, M. Rasras, D. K. Sparacin, K.-Y. Tu, A. E. White, and C. W. Wong, “Electronic-photonic integrated circuits on the CMOS platform,” Proc. SPIE 6125, 612502 (2006).
[Crossref]

Lo, G. Q.

J. Wang, W. Y. Loh, K. T. Chua, H. Zang, Y. Z. Xiong, S. M. F. Tan, M. B. Yu, S. J. Lee, G. Q. Lo, and D. L. Kwong, “Low-voltage high-speed (18GHz/1V) evanescent-coupled thin-file-Ge lateral PIN photodetectors integrated on Si waveguide,” IEEE Photon. Technol. Lett. 20(17), 1485–1487 (2008).
[Crossref]

Loh, W. Y.

J. Wang, W. Y. Loh, K. T. Chua, H. Zang, Y. Z. Xiong, S. M. F. Tan, M. B. Yu, S. J. Lee, G. Q. Lo, and D. L. Kwong, “Low-voltage high-speed (18GHz/1V) evanescent-coupled thin-file-Ge lateral PIN photodetectors integrated on Si waveguide,” IEEE Photon. Technol. Lett. 20(17), 1485–1487 (2008).
[Crossref]

Marris-Morini, D.

L. Vivien, J. Osmond, J.-M. Fedeli, D. Marris-Morini, P. Crozat, J.-F. Damlencourt, E. Cassan, Y. Lecunff, and S. Laval, “42 GHz p.i.n Germanium photodetector integrated in a silicon-on-inculator waveguide,” Opt. Express 16, 6252 (2008).

Michel, J.

D. Ahn, C.-Y. Hong, J. Liu, W. Giziewicz, M. Beals, L. C. Kimerling, J. Michel, J. Chen, and F. X. Kärtner, “High performance, waveguide integrated Ge photodetectors,” Opt. Express 15(7), 3916–3921 (2007).
[Crossref] [PubMed]

L. C. Kimerling, D. Ahn, A. B. Apsel, M. Beals, D. Carothers, Y.-K. Chen, T. Conway, D. M. Gill, M. Grove, C.-Y. Hong, M. Lipson, J. Liu, J. Michel, D. Pan, S. S. Patel, A. T. Pomerene, M. Rasras, D. K. Sparacin, K.-Y. Tu, A. E. White, and C. W. Wong, “Electronic-photonic integrated circuits on the CMOS platform,” Proc. SPIE 6125, 612502 (2006).
[Crossref]

Morse, M. M.

Osmond, J.

L. Vivien, J. Osmond, J.-M. Fedeli, D. Marris-Morini, P. Crozat, J.-F. Damlencourt, E. Cassan, Y. Lecunff, and S. Laval, “42 GHz p.i.n Germanium photodetector integrated in a silicon-on-inculator waveguide,” Opt. Express 16, 6252 (2008).

Ouyang, Q. C.

G. Dehlinger, S. J. Koester, J. D. Schaub, J. O. Chu, Q. C. Ouyang, and A. Grill, “High-speed Germanium-on-SOI lateral PIN photodiodes,” IEEE Photon. Technol. Lett. 16(11), 2547–2549 (2004).
[Crossref]

Pan, D.

L. C. Kimerling, D. Ahn, A. B. Apsel, M. Beals, D. Carothers, Y.-K. Chen, T. Conway, D. M. Gill, M. Grove, C.-Y. Hong, M. Lipson, J. Liu, J. Michel, D. Pan, S. S. Patel, A. T. Pomerene, M. Rasras, D. K. Sparacin, K.-Y. Tu, A. E. White, and C. W. Wong, “Electronic-photonic integrated circuits on the CMOS platform,” Proc. SPIE 6125, 612502 (2006).
[Crossref]

Paniccia, M. J.

Patel, S. S.

L. C. Kimerling, D. Ahn, A. B. Apsel, M. Beals, D. Carothers, Y.-K. Chen, T. Conway, D. M. Gill, M. Grove, C.-Y. Hong, M. Lipson, J. Liu, J. Michel, D. Pan, S. S. Patel, A. T. Pomerene, M. Rasras, D. K. Sparacin, K.-Y. Tu, A. E. White, and C. W. Wong, “Electronic-photonic integrated circuits on the CMOS platform,” Proc. SPIE 6125, 612502 (2006).
[Crossref]

Pearson, M.

S. Bidnyk, D. Feng, A. Balakrishnan, M. Pearson, M. Gao, H. Liang, W. Qian, C.-C. Kung, J. Fong, J. Yin, and M. Asghari, “Jeremy Yin, and M. Asghari, “Silicon-on-insulator-based planar circuit for passive optical network applications,” IEEE Photon. Technol. Lett. 18(22), 2392–2394 (2006).
[Crossref]

Pomerene, A. T.

L. C. Kimerling, D. Ahn, A. B. Apsel, M. Beals, D. Carothers, Y.-K. Chen, T. Conway, D. M. Gill, M. Grove, C.-Y. Hong, M. Lipson, J. Liu, J. Michel, D. Pan, S. S. Patel, A. T. Pomerene, M. Rasras, D. K. Sparacin, K.-Y. Tu, A. E. White, and C. W. Wong, “Electronic-photonic integrated circuits on the CMOS platform,” Proc. SPIE 6125, 612502 (2006).
[Crossref]

Qian, W.

N.-N. Feng, D. Feng, H. Liang, W. Qian, C.-C. Kung, J. Fong, and M. Asghari, “Low-loss polarization-insensitive Silicon-on-insulator-based WDM filter for triplexer applications,” IEEE Photon. Technol. Lett. 20(23), 1968–1970 (2008).
[Crossref]

S. Bidnyk, D. Feng, A. Balakrishnan, M. Pearson, M. Gao, H. Liang, W. Qian, C.-C. Kung, J. Fong, J. Yin, and M. Asghari, “Jeremy Yin, and M. Asghari, “Silicon-on-insulator-based planar circuit for passive optical network applications,” IEEE Photon. Technol. Lett. 18(22), 2392–2394 (2006).
[Crossref]

Rasras, M.

L. C. Kimerling, D. Ahn, A. B. Apsel, M. Beals, D. Carothers, Y.-K. Chen, T. Conway, D. M. Gill, M. Grove, C.-Y. Hong, M. Lipson, J. Liu, J. Michel, D. Pan, S. S. Patel, A. T. Pomerene, M. Rasras, D. K. Sparacin, K.-Y. Tu, A. E. White, and C. W. Wong, “Electronic-photonic integrated circuits on the CMOS platform,” Proc. SPIE 6125, 612502 (2006).
[Crossref]

Rubin, D.

Sarid, G.

Schaub, J. D.

G. Dehlinger, S. J. Koester, J. D. Schaub, J. O. Chu, Q. C. Ouyang, and A. Grill, “High-speed Germanium-on-SOI lateral PIN photodiodes,” IEEE Photon. Technol. Lett. 16(11), 2547–2549 (2004).
[Crossref]

Sparacin, D. K.

L. C. Kimerling, D. Ahn, A. B. Apsel, M. Beals, D. Carothers, Y.-K. Chen, T. Conway, D. M. Gill, M. Grove, C.-Y. Hong, M. Lipson, J. Liu, J. Michel, D. Pan, S. S. Patel, A. T. Pomerene, M. Rasras, D. K. Sparacin, K.-Y. Tu, A. E. White, and C. W. Wong, “Electronic-photonic integrated circuits on the CMOS platform,” Proc. SPIE 6125, 612502 (2006).
[Crossref]

Tan, S. M. F.

J. Wang, W. Y. Loh, K. T. Chua, H. Zang, Y. Z. Xiong, S. M. F. Tan, M. B. Yu, S. J. Lee, G. Q. Lo, and D. L. Kwong, “Low-voltage high-speed (18GHz/1V) evanescent-coupled thin-file-Ge lateral PIN photodetectors integrated on Si waveguide,” IEEE Photon. Technol. Lett. 20(17), 1485–1487 (2008).
[Crossref]

Tu, K.-Y.

L. C. Kimerling, D. Ahn, A. B. Apsel, M. Beals, D. Carothers, Y.-K. Chen, T. Conway, D. M. Gill, M. Grove, C.-Y. Hong, M. Lipson, J. Liu, J. Michel, D. Pan, S. S. Patel, A. T. Pomerene, M. Rasras, D. K. Sparacin, K.-Y. Tu, A. E. White, and C. W. Wong, “Electronic-photonic integrated circuits on the CMOS platform,” Proc. SPIE 6125, 612502 (2006).
[Crossref]

Vivien, L.

L. Vivien, J. Osmond, J.-M. Fedeli, D. Marris-Morini, P. Crozat, J.-F. Damlencourt, E. Cassan, Y. Lecunff, and S. Laval, “42 GHz p.i.n Germanium photodetector integrated in a silicon-on-inculator waveguide,” Opt. Express 16, 6252 (2008).

Wang, J.

J. Wang, W. Y. Loh, K. T. Chua, H. Zang, Y. Z. Xiong, S. M. F. Tan, M. B. Yu, S. J. Lee, G. Q. Lo, and D. L. Kwong, “Low-voltage high-speed (18GHz/1V) evanescent-coupled thin-file-Ge lateral PIN photodetectors integrated on Si waveguide,” IEEE Photon. Technol. Lett. 20(17), 1485–1487 (2008).
[Crossref]

White, A. E.

L. C. Kimerling, D. Ahn, A. B. Apsel, M. Beals, D. Carothers, Y.-K. Chen, T. Conway, D. M. Gill, M. Grove, C.-Y. Hong, M. Lipson, J. Liu, J. Michel, D. Pan, S. S. Patel, A. T. Pomerene, M. Rasras, D. K. Sparacin, K.-Y. Tu, A. E. White, and C. W. Wong, “Electronic-photonic integrated circuits on the CMOS platform,” Proc. SPIE 6125, 612502 (2006).
[Crossref]

Wong, C. W.

L. C. Kimerling, D. Ahn, A. B. Apsel, M. Beals, D. Carothers, Y.-K. Chen, T. Conway, D. M. Gill, M. Grove, C.-Y. Hong, M. Lipson, J. Liu, J. Michel, D. Pan, S. S. Patel, A. T. Pomerene, M. Rasras, D. K. Sparacin, K.-Y. Tu, A. E. White, and C. W. Wong, “Electronic-photonic integrated circuits on the CMOS platform,” Proc. SPIE 6125, 612502 (2006).
[Crossref]

Xiong, Y. Z.

J. Wang, W. Y. Loh, K. T. Chua, H. Zang, Y. Z. Xiong, S. M. F. Tan, M. B. Yu, S. J. Lee, G. Q. Lo, and D. L. Kwong, “Low-voltage high-speed (18GHz/1V) evanescent-coupled thin-file-Ge lateral PIN photodetectors integrated on Si waveguide,” IEEE Photon. Technol. Lett. 20(17), 1485–1487 (2008).
[Crossref]

Yin, J.

S. Bidnyk, D. Feng, A. Balakrishnan, M. Pearson, M. Gao, H. Liang, W. Qian, C.-C. Kung, J. Fong, J. Yin, and M. Asghari, “Jeremy Yin, and M. Asghari, “Silicon-on-insulator-based planar circuit for passive optical network applications,” IEEE Photon. Technol. Lett. 18(22), 2392–2394 (2006).
[Crossref]

Yin, T.

Yu, M. B.

J. Wang, W. Y. Loh, K. T. Chua, H. Zang, Y. Z. Xiong, S. M. F. Tan, M. B. Yu, S. J. Lee, G. Q. Lo, and D. L. Kwong, “Low-voltage high-speed (18GHz/1V) evanescent-coupled thin-file-Ge lateral PIN photodetectors integrated on Si waveguide,” IEEE Photon. Technol. Lett. 20(17), 1485–1487 (2008).
[Crossref]

Zang, H.

J. Wang, W. Y. Loh, K. T. Chua, H. Zang, Y. Z. Xiong, S. M. F. Tan, M. B. Yu, S. J. Lee, G. Q. Lo, and D. L. Kwong, “Low-voltage high-speed (18GHz/1V) evanescent-coupled thin-file-Ge lateral PIN photodetectors integrated on Si waveguide,” IEEE Photon. Technol. Lett. 20(17), 1485–1487 (2008).
[Crossref]

IEEE Photon. Technol. Lett. (4)

G. Dehlinger, S. J. Koester, J. D. Schaub, J. O. Chu, Q. C. Ouyang, and A. Grill, “High-speed Germanium-on-SOI lateral PIN photodiodes,” IEEE Photon. Technol. Lett. 16(11), 2547–2549 (2004).
[Crossref]

S. Bidnyk, D. Feng, A. Balakrishnan, M. Pearson, M. Gao, H. Liang, W. Qian, C.-C. Kung, J. Fong, J. Yin, and M. Asghari, “Jeremy Yin, and M. Asghari, “Silicon-on-insulator-based planar circuit for passive optical network applications,” IEEE Photon. Technol. Lett. 18(22), 2392–2394 (2006).
[Crossref]

N.-N. Feng, D. Feng, H. Liang, W. Qian, C.-C. Kung, J. Fong, and M. Asghari, “Low-loss polarization-insensitive Silicon-on-insulator-based WDM filter for triplexer applications,” IEEE Photon. Technol. Lett. 20(23), 1968–1970 (2008).
[Crossref]

J. Wang, W. Y. Loh, K. T. Chua, H. Zang, Y. Z. Xiong, S. M. F. Tan, M. B. Yu, S. J. Lee, G. Q. Lo, and D. L. Kwong, “Low-voltage high-speed (18GHz/1V) evanescent-coupled thin-file-Ge lateral PIN photodetectors integrated on Si waveguide,” IEEE Photon. Technol. Lett. 20(17), 1485–1487 (2008).
[Crossref]

Opt. Express (4)

Proc. SPIE (1)

L. C. Kimerling, D. Ahn, A. B. Apsel, M. Beals, D. Carothers, Y.-K. Chen, T. Conway, D. M. Gill, M. Grove, C.-Y. Hong, M. Lipson, J. Liu, J. Michel, D. Pan, S. S. Patel, A. T. Pomerene, M. Rasras, D. K. Sparacin, K.-Y. Tu, A. E. White, and C. W. Wong, “Electronic-photonic integrated circuits on the CMOS platform,” Proc. SPIE 6125, 612502 (2006).
[Crossref]

Other (3)

L. C. Kimerling, and L. Dal Negro, s. Saini, Y. Yi, D. Ahn, S. Akiyama, D. Cannon, J. Liu, J. G. sandland, D. Sparacin, J. Michel, K. Wada and M. R. Watts, “Monolithic silicon microphotonics,” in Silicon Photonics: Topics in Applied Physics, L. Pavesi and D. J. Lockwood, eds., (Springer, Berlin, 2004) vol.94.

G. T. Reed, and A. Knights, Silicon Photonucs, (Wiley, 93–97, 2004).

Kotura Inc, http://www.kotura.com/products/ .

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Figures (4)

Fig. 1
Fig. 1

(a) Schematic view of a vertical pin Ge waveguide photodetector integrated on top of a large core SOI waveguide. (b) Simulation results of power absorption by Ge versus Ge film thickness for the photodetector structure. (c) Cross-section TEM image of the fabricated device after CMT step (0.92μm Ge film on 3μm thick SOI waveguide). (d) Top view SEM image of the full-processed device.

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Fig. 2
Fig. 2

(a) Dark current I-V characteristics for different temperatures of a Ge photodetector integrated on a large core SOI waveguide. (b) The temperature dependence of the device at bias voltage of −0.5V.

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Fig. 3
Fig. 3

(a) Excess loss of a SOI waveguide with Ge film on top compared to a reference passive waveguide without Germanium. (b) The measured external and calculated internal responsivities of the device.

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Fig. 4
Fig. 4

(a) Frequency response of a 200μm device with different bias voltage. (b) 3dB bandwidth f3dB versus the device length.

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