Abstract

A compact pin Ge photodetector is integrated in submicron SOI rib waveguide. The detector length is reduced down to 15 μm using butt coupling configuration which is sufficient to totally absorb light at the wavelength of 1.55 μm. A -3 dB bandwidth of 42 GHz has been measured at a 4V reverse bias with a responsivity as high as 1 A/W at the wavelength of 1.55 μm and a low dark current density of 60 mA/cm2. At a wavelength of 1.52 μm, a responsivity of 1 A/W is obtained under -0.5 V bias. The process is fully compatible with CMOS technology.

© 2009 Optical Society of America

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    [CrossRef]
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    [CrossRef]
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    [CrossRef] [PubMed]
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2008 (4)

D. Marris-Morini, L. Vivien, J. M. Fédéli, E. Cassan, P. Lyan, and S. Laval, "Low loss and high speed silicon optical modulator based on a lateral carrier depletion structure," Opt. Express 16, 334-339 (2008).
[CrossRef] [PubMed]

J. Wang, W. Y. Loh, K.T. Chua, H. Zang, Y. Z. Xiong, T. H. Loh, M. B. Yu, S. J. Lee, G.-Q. Lo, and D.-L. Kwong, "Evanescent-coupled Ge p-i-n photodetectors on Si-waveguide with SEG-Ge and comparative study of lateral and vertical p-i-n configurations," IEEE Electron. Dev. Lett. 29, 445-448 (2008)
[CrossRef]

K. W. Ang, S. Zhu, M. Yu, G.-Q. Lo, and D.-L. Kwong, "High performance waveguided Ge on SOI Metal-semiconductor-Metal photodetectors with novel silicon carbon (Si:C) schottky barrier enhancement layer," IEEE Photon. Technol. Lett. 20, 754-756 (2008)
[CrossRef]

L. Vivien, D. Marris-Morini, J-M. Fédéli, M. Rouvière, J-F. Damlencourt, L. El Melhaoui, X. Le Roux, P. Crozat, J. Mangeney, E. Cassan, and S. Laval, "Metal-semiconductor-metal Ge photodetectors integrated in Silicon waveguides," Appl. Phys. Lett. 92, 151114-151116 (2008)
[CrossRef]

2007 (3)

2005 (2)

T. Tsuchizawa, K. Yamada, H. Fukuda, T. Watanabe, J. Takahashi, M. Takahashi, T. Shoji, E. Tamechika, S. Itabashi, and H. Morita, "Microphotonics Devices Based on Silicon Micro-Fabrication Technology," IEEE J. Sel. Top. Quantum Electron. 11, 232-240 (2005).
[CrossRef]

L. Liao, D. Samara-Rubio, M. Morse, A. Liu, D. Hodge, D. Rubin, U. D. Keil, and T. Franck, "High speed silicon Mach Zehnder modulator," Opt. Express 13, 3129-3135 (2005).
[CrossRef] [PubMed]

2004 (4)

G. T. Reed, "The optical age of silicon," Nature 427, 595-596 (2004).
[CrossRef] [PubMed]

L. Vivien, S. Lardenois, D. Pascal, S. Laval, E. Cassan, J-L. Cercus, A. Koster, J-M. Fédéli, and M. Heitzmann, "Experimental demonstration of a low-loss optical H-tree distribution using silicon-on-insulator microwaveguides," Appl. Phys. Lett. 85, 701-703 (2004).
[CrossRef]

P. Dumon, W. Bogaerts, V. Wiaux, J. Wouters, S. Beckx, J. Van Campenhout, D. Taillaert, B. Luyssaert, P. Bienstman, D. Van Thourhout, and R. Baets, "Low-loss SOI photonic wires and ring resonators fabricated with deep UV lithography," IEEE Photon. Technol. Lett. 16, 1328-1330 (2004).
[CrossRef]

A. Koster, E. Cassan, S. Laval, L. Vivien, and D. Pascal, "Ultra-compact splitter for submicrometer silicon-on-insulator rib waveguides," J. Opt. Soc. Am A 21, 2180-2185 (2004).
[CrossRef]

2003 (1)

Ahn, D.

Ang, K. W.

K. W. Ang, S. Zhu, M. Yu, G.-Q. Lo, and D.-L. Kwong, "High performance waveguided Ge on SOI Metal-semiconductor-Metal photodetectors with novel silicon carbon (Si:C) schottky barrier enhancement layer," IEEE Photon. Technol. Lett. 20, 754-756 (2008)
[CrossRef]

Baets, R.

P. Dumon, W. Bogaerts, V. Wiaux, J. Wouters, S. Beckx, J. Van Campenhout, D. Taillaert, B. Luyssaert, P. Bienstman, D. Van Thourhout, and R. Baets, "Low-loss SOI photonic wires and ring resonators fabricated with deep UV lithography," IEEE Photon. Technol. Lett. 16, 1328-1330 (2004).
[CrossRef]

Beckx, S.

P. Dumon, W. Bogaerts, V. Wiaux, J. Wouters, S. Beckx, J. Van Campenhout, D. Taillaert, B. Luyssaert, P. Bienstman, D. Van Thourhout, and R. Baets, "Low-loss SOI photonic wires and ring resonators fabricated with deep UV lithography," IEEE Photon. Technol. Lett. 16, 1328-1330 (2004).
[CrossRef]

Bienstman, P.

P. Dumon, W. Bogaerts, V. Wiaux, J. Wouters, S. Beckx, J. Van Campenhout, D. Taillaert, B. Luyssaert, P. Bienstman, D. Van Thourhout, and R. Baets, "Low-loss SOI photonic wires and ring resonators fabricated with deep UV lithography," IEEE Photon. Technol. Lett. 16, 1328-1330 (2004).
[CrossRef]

Bogaerts, W.

P. Dumon, W. Bogaerts, V. Wiaux, J. Wouters, S. Beckx, J. Van Campenhout, D. Taillaert, B. Luyssaert, P. Bienstman, D. Van Thourhout, and R. Baets, "Low-loss SOI photonic wires and ring resonators fabricated with deep UV lithography," IEEE Photon. Technol. Lett. 16, 1328-1330 (2004).
[CrossRef]

Bouzaida, N.

Cassan, E.

L. Vivien, D. Marris-Morini, J-M. Fédéli, M. Rouvière, J-F. Damlencourt, L. El Melhaoui, X. Le Roux, P. Crozat, J. Mangeney, E. Cassan, and S. Laval, "Metal-semiconductor-metal Ge photodetectors integrated in Silicon waveguides," Appl. Phys. Lett. 92, 151114-151116 (2008)
[CrossRef]

D. Marris-Morini, L. Vivien, J. M. Fédéli, E. Cassan, P. Lyan, and S. Laval, "Low loss and high speed silicon optical modulator based on a lateral carrier depletion structure," Opt. Express 16, 334-339 (2008).
[CrossRef] [PubMed]

L. Vivien, M. Rouvière, J-M. Fédéli, D. Marris-Morini, J-F. Damlencourt, J. Mangeney, P. Crozat, L. El Melhaoui, E. Cassan, X. Le Roux, D. Pascal, and S. Laval, "High speed and high responsivity germanium photodetector integrated in a Silicon-On-Insulator microwaveguide," Opt. Express 15, 9843-9848 (2007).
[CrossRef] [PubMed]

A. Koster, E. Cassan, S. Laval, L. Vivien, and D. Pascal, "Ultra-compact splitter for submicrometer silicon-on-insulator rib waveguides," J. Opt. Soc. Am A 21, 2180-2185 (2004).
[CrossRef]

L. Vivien, S. Lardenois, D. Pascal, S. Laval, E. Cassan, J-L. Cercus, A. Koster, J-M. Fédéli, and M. Heitzmann, "Experimental demonstration of a low-loss optical H-tree distribution using silicon-on-insulator microwaveguides," Appl. Phys. Lett. 85, 701-703 (2004).
[CrossRef]

S. Lardenois, D. Pascal, L. Vivien, E. Cassan, S. Laval, R. Orobtchouck, M. Heitzmann, N. Bouzaida, and L. Mollard, Opt. Lett. 28, 1150-1152 (2003).
[CrossRef]

Cercus, J-L.

L. Vivien, S. Lardenois, D. Pascal, S. Laval, E. Cassan, J-L. Cercus, A. Koster, J-M. Fédéli, and M. Heitzmann, "Experimental demonstration of a low-loss optical H-tree distribution using silicon-on-insulator microwaveguides," Appl. Phys. Lett. 85, 701-703 (2004).
[CrossRef]

Chetrit, Y.

Chua, K.T.

J. Wang, W. Y. Loh, K.T. Chua, H. Zang, Y. Z. Xiong, T. H. Loh, M. B. Yu, S. J. Lee, G.-Q. Lo, and D.-L. Kwong, "Evanescent-coupled Ge p-i-n photodetectors on Si-waveguide with SEG-Ge and comparative study of lateral and vertical p-i-n configurations," IEEE Electron. Dev. Lett. 29, 445-448 (2008)
[CrossRef]

Cohen, R.

Crozat, P.

L. Vivien, D. Marris-Morini, J-M. Fédéli, M. Rouvière, J-F. Damlencourt, L. El Melhaoui, X. Le Roux, P. Crozat, J. Mangeney, E. Cassan, and S. Laval, "Metal-semiconductor-metal Ge photodetectors integrated in Silicon waveguides," Appl. Phys. Lett. 92, 151114-151116 (2008)
[CrossRef]

L. Vivien, M. Rouvière, J-M. Fédéli, D. Marris-Morini, J-F. Damlencourt, J. Mangeney, P. Crozat, L. El Melhaoui, E. Cassan, X. Le Roux, D. Pascal, and S. Laval, "High speed and high responsivity germanium photodetector integrated in a Silicon-On-Insulator microwaveguide," Opt. Express 15, 9843-9848 (2007).
[CrossRef] [PubMed]

Damlencourt, J-F.

L. Vivien, D. Marris-Morini, J-M. Fédéli, M. Rouvière, J-F. Damlencourt, L. El Melhaoui, X. Le Roux, P. Crozat, J. Mangeney, E. Cassan, and S. Laval, "Metal-semiconductor-metal Ge photodetectors integrated in Silicon waveguides," Appl. Phys. Lett. 92, 151114-151116 (2008)
[CrossRef]

L. Vivien, M. Rouvière, J-M. Fédéli, D. Marris-Morini, J-F. Damlencourt, J. Mangeney, P. Crozat, L. El Melhaoui, E. Cassan, X. Le Roux, D. Pascal, and S. Laval, "High speed and high responsivity germanium photodetector integrated in a Silicon-On-Insulator microwaveguide," Opt. Express 15, 9843-9848 (2007).
[CrossRef] [PubMed]

Dumon, P.

P. Dumon, W. Bogaerts, V. Wiaux, J. Wouters, S. Beckx, J. Van Campenhout, D. Taillaert, B. Luyssaert, P. Bienstman, D. Van Thourhout, and R. Baets, "Low-loss SOI photonic wires and ring resonators fabricated with deep UV lithography," IEEE Photon. Technol. Lett. 16, 1328-1330 (2004).
[CrossRef]

El Melhaoui, L.

L. Vivien, D. Marris-Morini, J-M. Fédéli, M. Rouvière, J-F. Damlencourt, L. El Melhaoui, X. Le Roux, P. Crozat, J. Mangeney, E. Cassan, and S. Laval, "Metal-semiconductor-metal Ge photodetectors integrated in Silicon waveguides," Appl. Phys. Lett. 92, 151114-151116 (2008)
[CrossRef]

L. Vivien, M. Rouvière, J-M. Fédéli, D. Marris-Morini, J-F. Damlencourt, J. Mangeney, P. Crozat, L. El Melhaoui, E. Cassan, X. Le Roux, D. Pascal, and S. Laval, "High speed and high responsivity germanium photodetector integrated in a Silicon-On-Insulator microwaveguide," Opt. Express 15, 9843-9848 (2007).
[CrossRef] [PubMed]

Fédéli, J. M.

Fédéli, J-M.

L. Vivien, D. Marris-Morini, J-M. Fédéli, M. Rouvière, J-F. Damlencourt, L. El Melhaoui, X. Le Roux, P. Crozat, J. Mangeney, E. Cassan, and S. Laval, "Metal-semiconductor-metal Ge photodetectors integrated in Silicon waveguides," Appl. Phys. Lett. 92, 151114-151116 (2008)
[CrossRef]

L. Vivien, M. Rouvière, J-M. Fédéli, D. Marris-Morini, J-F. Damlencourt, J. Mangeney, P. Crozat, L. El Melhaoui, E. Cassan, X. Le Roux, D. Pascal, and S. Laval, "High speed and high responsivity germanium photodetector integrated in a Silicon-On-Insulator microwaveguide," Opt. Express 15, 9843-9848 (2007).
[CrossRef] [PubMed]

L. Vivien, S. Lardenois, D. Pascal, S. Laval, E. Cassan, J-L. Cercus, A. Koster, J-M. Fédéli, and M. Heitzmann, "Experimental demonstration of a low-loss optical H-tree distribution using silicon-on-insulator microwaveguides," Appl. Phys. Lett. 85, 701-703 (2004).
[CrossRef]

Franck, T.

Fukuda, H.

T. Tsuchizawa, K. Yamada, H. Fukuda, T. Watanabe, J. Takahashi, M. Takahashi, T. Shoji, E. Tamechika, S. Itabashi, and H. Morita, "Microphotonics Devices Based on Silicon Micro-Fabrication Technology," IEEE J. Sel. Top. Quantum Electron. 11, 232-240 (2005).
[CrossRef]

Heitzmann, M.

L. Vivien, S. Lardenois, D. Pascal, S. Laval, E. Cassan, J-L. Cercus, A. Koster, J-M. Fédéli, and M. Heitzmann, "Experimental demonstration of a low-loss optical H-tree distribution using silicon-on-insulator microwaveguides," Appl. Phys. Lett. 85, 701-703 (2004).
[CrossRef]

S. Lardenois, D. Pascal, L. Vivien, E. Cassan, S. Laval, R. Orobtchouck, M. Heitzmann, N. Bouzaida, and L. Mollard, Opt. Lett. 28, 1150-1152 (2003).
[CrossRef]

Hodge, D.

Itabashi, S.

T. Tsuchizawa, K. Yamada, H. Fukuda, T. Watanabe, J. Takahashi, M. Takahashi, T. Shoji, E. Tamechika, S. Itabashi, and H. Morita, "Microphotonics Devices Based on Silicon Micro-Fabrication Technology," IEEE J. Sel. Top. Quantum Electron. 11, 232-240 (2005).
[CrossRef]

Keil, U. D.

Koster, A.

A. Koster, E. Cassan, S. Laval, L. Vivien, and D. Pascal, "Ultra-compact splitter for submicrometer silicon-on-insulator rib waveguides," J. Opt. Soc. Am A 21, 2180-2185 (2004).
[CrossRef]

L. Vivien, S. Lardenois, D. Pascal, S. Laval, E. Cassan, J-L. Cercus, A. Koster, J-M. Fédéli, and M. Heitzmann, "Experimental demonstration of a low-loss optical H-tree distribution using silicon-on-insulator microwaveguides," Appl. Phys. Lett. 85, 701-703 (2004).
[CrossRef]

Kwong, D.-L.

J. Wang, W. Y. Loh, K.T. Chua, H. Zang, Y. Z. Xiong, T. H. Loh, M. B. Yu, S. J. Lee, G.-Q. Lo, and D.-L. Kwong, "Evanescent-coupled Ge p-i-n photodetectors on Si-waveguide with SEG-Ge and comparative study of lateral and vertical p-i-n configurations," IEEE Electron. Dev. Lett. 29, 445-448 (2008)
[CrossRef]

K. W. Ang, S. Zhu, M. Yu, G.-Q. Lo, and D.-L. Kwong, "High performance waveguided Ge on SOI Metal-semiconductor-Metal photodetectors with novel silicon carbon (Si:C) schottky barrier enhancement layer," IEEE Photon. Technol. Lett. 20, 754-756 (2008)
[CrossRef]

Lardenois, S.

L. Vivien, S. Lardenois, D. Pascal, S. Laval, E. Cassan, J-L. Cercus, A. Koster, J-M. Fédéli, and M. Heitzmann, "Experimental demonstration of a low-loss optical H-tree distribution using silicon-on-insulator microwaveguides," Appl. Phys. Lett. 85, 701-703 (2004).
[CrossRef]

S. Lardenois, D. Pascal, L. Vivien, E. Cassan, S. Laval, R. Orobtchouck, M. Heitzmann, N. Bouzaida, and L. Mollard, Opt. Lett. 28, 1150-1152 (2003).
[CrossRef]

Laval, S.

L. Vivien, D. Marris-Morini, J-M. Fédéli, M. Rouvière, J-F. Damlencourt, L. El Melhaoui, X. Le Roux, P. Crozat, J. Mangeney, E. Cassan, and S. Laval, "Metal-semiconductor-metal Ge photodetectors integrated in Silicon waveguides," Appl. Phys. Lett. 92, 151114-151116 (2008)
[CrossRef]

D. Marris-Morini, L. Vivien, J. M. Fédéli, E. Cassan, P. Lyan, and S. Laval, "Low loss and high speed silicon optical modulator based on a lateral carrier depletion structure," Opt. Express 16, 334-339 (2008).
[CrossRef] [PubMed]

L. Vivien, M. Rouvière, J-M. Fédéli, D. Marris-Morini, J-F. Damlencourt, J. Mangeney, P. Crozat, L. El Melhaoui, E. Cassan, X. Le Roux, D. Pascal, and S. Laval, "High speed and high responsivity germanium photodetector integrated in a Silicon-On-Insulator microwaveguide," Opt. Express 15, 9843-9848 (2007).
[CrossRef] [PubMed]

A. Koster, E. Cassan, S. Laval, L. Vivien, and D. Pascal, "Ultra-compact splitter for submicrometer silicon-on-insulator rib waveguides," J. Opt. Soc. Am A 21, 2180-2185 (2004).
[CrossRef]

L. Vivien, S. Lardenois, D. Pascal, S. Laval, E. Cassan, J-L. Cercus, A. Koster, J-M. Fédéli, and M. Heitzmann, "Experimental demonstration of a low-loss optical H-tree distribution using silicon-on-insulator microwaveguides," Appl. Phys. Lett. 85, 701-703 (2004).
[CrossRef]

S. Lardenois, D. Pascal, L. Vivien, E. Cassan, S. Laval, R. Orobtchouck, M. Heitzmann, N. Bouzaida, and L. Mollard, Opt. Lett. 28, 1150-1152 (2003).
[CrossRef]

Le Roux, X.

L. Vivien, D. Marris-Morini, J-M. Fédéli, M. Rouvière, J-F. Damlencourt, L. El Melhaoui, X. Le Roux, P. Crozat, J. Mangeney, E. Cassan, and S. Laval, "Metal-semiconductor-metal Ge photodetectors integrated in Silicon waveguides," Appl. Phys. Lett. 92, 151114-151116 (2008)
[CrossRef]

L. Vivien, M. Rouvière, J-M. Fédéli, D. Marris-Morini, J-F. Damlencourt, J. Mangeney, P. Crozat, L. El Melhaoui, E. Cassan, X. Le Roux, D. Pascal, and S. Laval, "High speed and high responsivity germanium photodetector integrated in a Silicon-On-Insulator microwaveguide," Opt. Express 15, 9843-9848 (2007).
[CrossRef] [PubMed]

Lee, S. J.

J. Wang, W. Y. Loh, K.T. Chua, H. Zang, Y. Z. Xiong, T. H. Loh, M. B. Yu, S. J. Lee, G.-Q. Lo, and D.-L. Kwong, "Evanescent-coupled Ge p-i-n photodetectors on Si-waveguide with SEG-Ge and comparative study of lateral and vertical p-i-n configurations," IEEE Electron. Dev. Lett. 29, 445-448 (2008)
[CrossRef]

Liao, L.

Liu, A.

Lo, G.-Q.

J. Wang, W. Y. Loh, K.T. Chua, H. Zang, Y. Z. Xiong, T. H. Loh, M. B. Yu, S. J. Lee, G.-Q. Lo, and D.-L. Kwong, "Evanescent-coupled Ge p-i-n photodetectors on Si-waveguide with SEG-Ge and comparative study of lateral and vertical p-i-n configurations," IEEE Electron. Dev. Lett. 29, 445-448 (2008)
[CrossRef]

K. W. Ang, S. Zhu, M. Yu, G.-Q. Lo, and D.-L. Kwong, "High performance waveguided Ge on SOI Metal-semiconductor-Metal photodetectors with novel silicon carbon (Si:C) schottky barrier enhancement layer," IEEE Photon. Technol. Lett. 20, 754-756 (2008)
[CrossRef]

Loh, T. H.

J. Wang, W. Y. Loh, K.T. Chua, H. Zang, Y. Z. Xiong, T. H. Loh, M. B. Yu, S. J. Lee, G.-Q. Lo, and D.-L. Kwong, "Evanescent-coupled Ge p-i-n photodetectors on Si-waveguide with SEG-Ge and comparative study of lateral and vertical p-i-n configurations," IEEE Electron. Dev. Lett. 29, 445-448 (2008)
[CrossRef]

Loh, W. Y.

J. Wang, W. Y. Loh, K.T. Chua, H. Zang, Y. Z. Xiong, T. H. Loh, M. B. Yu, S. J. Lee, G.-Q. Lo, and D.-L. Kwong, "Evanescent-coupled Ge p-i-n photodetectors on Si-waveguide with SEG-Ge and comparative study of lateral and vertical p-i-n configurations," IEEE Electron. Dev. Lett. 29, 445-448 (2008)
[CrossRef]

Luyssaert, B.

P. Dumon, W. Bogaerts, V. Wiaux, J. Wouters, S. Beckx, J. Van Campenhout, D. Taillaert, B. Luyssaert, P. Bienstman, D. Van Thourhout, and R. Baets, "Low-loss SOI photonic wires and ring resonators fabricated with deep UV lithography," IEEE Photon. Technol. Lett. 16, 1328-1330 (2004).
[CrossRef]

Lyan, P.

Mangeney, J.

L. Vivien, D. Marris-Morini, J-M. Fédéli, M. Rouvière, J-F. Damlencourt, L. El Melhaoui, X. Le Roux, P. Crozat, J. Mangeney, E. Cassan, and S. Laval, "Metal-semiconductor-metal Ge photodetectors integrated in Silicon waveguides," Appl. Phys. Lett. 92, 151114-151116 (2008)
[CrossRef]

L. Vivien, M. Rouvière, J-M. Fédéli, D. Marris-Morini, J-F. Damlencourt, J. Mangeney, P. Crozat, L. El Melhaoui, E. Cassan, X. Le Roux, D. Pascal, and S. Laval, "High speed and high responsivity germanium photodetector integrated in a Silicon-On-Insulator microwaveguide," Opt. Express 15, 9843-9848 (2007).
[CrossRef] [PubMed]

Marris-Morini, D.

Mollard, L.

Morita, H.

T. Tsuchizawa, K. Yamada, H. Fukuda, T. Watanabe, J. Takahashi, M. Takahashi, T. Shoji, E. Tamechika, S. Itabashi, and H. Morita, "Microphotonics Devices Based on Silicon Micro-Fabrication Technology," IEEE J. Sel. Top. Quantum Electron. 11, 232-240 (2005).
[CrossRef]

Morse, M.

Morse, M. M.

Orobtchouck, R.

Paniccia, M. J.

Pascal, D.

L. Vivien, M. Rouvière, J-M. Fédéli, D. Marris-Morini, J-F. Damlencourt, J. Mangeney, P. Crozat, L. El Melhaoui, E. Cassan, X. Le Roux, D. Pascal, and S. Laval, "High speed and high responsivity germanium photodetector integrated in a Silicon-On-Insulator microwaveguide," Opt. Express 15, 9843-9848 (2007).
[CrossRef] [PubMed]

A. Koster, E. Cassan, S. Laval, L. Vivien, and D. Pascal, "Ultra-compact splitter for submicrometer silicon-on-insulator rib waveguides," J. Opt. Soc. Am A 21, 2180-2185 (2004).
[CrossRef]

L. Vivien, S. Lardenois, D. Pascal, S. Laval, E. Cassan, J-L. Cercus, A. Koster, J-M. Fédéli, and M. Heitzmann, "Experimental demonstration of a low-loss optical H-tree distribution using silicon-on-insulator microwaveguides," Appl. Phys. Lett. 85, 701-703 (2004).
[CrossRef]

S. Lardenois, D. Pascal, L. Vivien, E. Cassan, S. Laval, R. Orobtchouck, M. Heitzmann, N. Bouzaida, and L. Mollard, Opt. Lett. 28, 1150-1152 (2003).
[CrossRef]

Reed, G. T.

G. T. Reed, "The optical age of silicon," Nature 427, 595-596 (2004).
[CrossRef] [PubMed]

Rouvière, M.

L. Vivien, D. Marris-Morini, J-M. Fédéli, M. Rouvière, J-F. Damlencourt, L. El Melhaoui, X. Le Roux, P. Crozat, J. Mangeney, E. Cassan, and S. Laval, "Metal-semiconductor-metal Ge photodetectors integrated in Silicon waveguides," Appl. Phys. Lett. 92, 151114-151116 (2008)
[CrossRef]

L. Vivien, M. Rouvière, J-M. Fédéli, D. Marris-Morini, J-F. Damlencourt, J. Mangeney, P. Crozat, L. El Melhaoui, E. Cassan, X. Le Roux, D. Pascal, and S. Laval, "High speed and high responsivity germanium photodetector integrated in a Silicon-On-Insulator microwaveguide," Opt. Express 15, 9843-9848 (2007).
[CrossRef] [PubMed]

Rubin, D.

Samara-Rubio, D.

Sarid, G.

Shoji, T.

T. Tsuchizawa, K. Yamada, H. Fukuda, T. Watanabe, J. Takahashi, M. Takahashi, T. Shoji, E. Tamechika, S. Itabashi, and H. Morita, "Microphotonics Devices Based on Silicon Micro-Fabrication Technology," IEEE J. Sel. Top. Quantum Electron. 11, 232-240 (2005).
[CrossRef]

Taillaert, D.

P. Dumon, W. Bogaerts, V. Wiaux, J. Wouters, S. Beckx, J. Van Campenhout, D. Taillaert, B. Luyssaert, P. Bienstman, D. Van Thourhout, and R. Baets, "Low-loss SOI photonic wires and ring resonators fabricated with deep UV lithography," IEEE Photon. Technol. Lett. 16, 1328-1330 (2004).
[CrossRef]

Takahashi, J.

T. Tsuchizawa, K. Yamada, H. Fukuda, T. Watanabe, J. Takahashi, M. Takahashi, T. Shoji, E. Tamechika, S. Itabashi, and H. Morita, "Microphotonics Devices Based on Silicon Micro-Fabrication Technology," IEEE J. Sel. Top. Quantum Electron. 11, 232-240 (2005).
[CrossRef]

Takahashi, M.

T. Tsuchizawa, K. Yamada, H. Fukuda, T. Watanabe, J. Takahashi, M. Takahashi, T. Shoji, E. Tamechika, S. Itabashi, and H. Morita, "Microphotonics Devices Based on Silicon Micro-Fabrication Technology," IEEE J. Sel. Top. Quantum Electron. 11, 232-240 (2005).
[CrossRef]

Tamechika, E.

T. Tsuchizawa, K. Yamada, H. Fukuda, T. Watanabe, J. Takahashi, M. Takahashi, T. Shoji, E. Tamechika, S. Itabashi, and H. Morita, "Microphotonics Devices Based on Silicon Micro-Fabrication Technology," IEEE J. Sel. Top. Quantum Electron. 11, 232-240 (2005).
[CrossRef]

Tsuchizawa, T.

T. Tsuchizawa, K. Yamada, H. Fukuda, T. Watanabe, J. Takahashi, M. Takahashi, T. Shoji, E. Tamechika, S. Itabashi, and H. Morita, "Microphotonics Devices Based on Silicon Micro-Fabrication Technology," IEEE J. Sel. Top. Quantum Electron. 11, 232-240 (2005).
[CrossRef]

Van Campenhout, J.

P. Dumon, W. Bogaerts, V. Wiaux, J. Wouters, S. Beckx, J. Van Campenhout, D. Taillaert, B. Luyssaert, P. Bienstman, D. Van Thourhout, and R. Baets, "Low-loss SOI photonic wires and ring resonators fabricated with deep UV lithography," IEEE Photon. Technol. Lett. 16, 1328-1330 (2004).
[CrossRef]

Van Thourhout, D.

P. Dumon, W. Bogaerts, V. Wiaux, J. Wouters, S. Beckx, J. Van Campenhout, D. Taillaert, B. Luyssaert, P. Bienstman, D. Van Thourhout, and R. Baets, "Low-loss SOI photonic wires and ring resonators fabricated with deep UV lithography," IEEE Photon. Technol. Lett. 16, 1328-1330 (2004).
[CrossRef]

Vivien, L.

L. Vivien, D. Marris-Morini, J-M. Fédéli, M. Rouvière, J-F. Damlencourt, L. El Melhaoui, X. Le Roux, P. Crozat, J. Mangeney, E. Cassan, and S. Laval, "Metal-semiconductor-metal Ge photodetectors integrated in Silicon waveguides," Appl. Phys. Lett. 92, 151114-151116 (2008)
[CrossRef]

D. Marris-Morini, L. Vivien, J. M. Fédéli, E. Cassan, P. Lyan, and S. Laval, "Low loss and high speed silicon optical modulator based on a lateral carrier depletion structure," Opt. Express 16, 334-339 (2008).
[CrossRef] [PubMed]

L. Vivien, M. Rouvière, J-M. Fédéli, D. Marris-Morini, J-F. Damlencourt, J. Mangeney, P. Crozat, L. El Melhaoui, E. Cassan, X. Le Roux, D. Pascal, and S. Laval, "High speed and high responsivity germanium photodetector integrated in a Silicon-On-Insulator microwaveguide," Opt. Express 15, 9843-9848 (2007).
[CrossRef] [PubMed]

A. Koster, E. Cassan, S. Laval, L. Vivien, and D. Pascal, "Ultra-compact splitter for submicrometer silicon-on-insulator rib waveguides," J. Opt. Soc. Am A 21, 2180-2185 (2004).
[CrossRef]

L. Vivien, S. Lardenois, D. Pascal, S. Laval, E. Cassan, J-L. Cercus, A. Koster, J-M. Fédéli, and M. Heitzmann, "Experimental demonstration of a low-loss optical H-tree distribution using silicon-on-insulator microwaveguides," Appl. Phys. Lett. 85, 701-703 (2004).
[CrossRef]

S. Lardenois, D. Pascal, L. Vivien, E. Cassan, S. Laval, R. Orobtchouck, M. Heitzmann, N. Bouzaida, and L. Mollard, Opt. Lett. 28, 1150-1152 (2003).
[CrossRef]

Wang, J.

J. Wang, W. Y. Loh, K.T. Chua, H. Zang, Y. Z. Xiong, T. H. Loh, M. B. Yu, S. J. Lee, G.-Q. Lo, and D.-L. Kwong, "Evanescent-coupled Ge p-i-n photodetectors on Si-waveguide with SEG-Ge and comparative study of lateral and vertical p-i-n configurations," IEEE Electron. Dev. Lett. 29, 445-448 (2008)
[CrossRef]

Watanabe, T.

T. Tsuchizawa, K. Yamada, H. Fukuda, T. Watanabe, J. Takahashi, M. Takahashi, T. Shoji, E. Tamechika, S. Itabashi, and H. Morita, "Microphotonics Devices Based on Silicon Micro-Fabrication Technology," IEEE J. Sel. Top. Quantum Electron. 11, 232-240 (2005).
[CrossRef]

Wiaux, V.

P. Dumon, W. Bogaerts, V. Wiaux, J. Wouters, S. Beckx, J. Van Campenhout, D. Taillaert, B. Luyssaert, P. Bienstman, D. Van Thourhout, and R. Baets, "Low-loss SOI photonic wires and ring resonators fabricated with deep UV lithography," IEEE Photon. Technol. Lett. 16, 1328-1330 (2004).
[CrossRef]

Wouters, J.

P. Dumon, W. Bogaerts, V. Wiaux, J. Wouters, S. Beckx, J. Van Campenhout, D. Taillaert, B. Luyssaert, P. Bienstman, D. Van Thourhout, and R. Baets, "Low-loss SOI photonic wires and ring resonators fabricated with deep UV lithography," IEEE Photon. Technol. Lett. 16, 1328-1330 (2004).
[CrossRef]

Xiong, Y. Z.

J. Wang, W. Y. Loh, K.T. Chua, H. Zang, Y. Z. Xiong, T. H. Loh, M. B. Yu, S. J. Lee, G.-Q. Lo, and D.-L. Kwong, "Evanescent-coupled Ge p-i-n photodetectors on Si-waveguide with SEG-Ge and comparative study of lateral and vertical p-i-n configurations," IEEE Electron. Dev. Lett. 29, 445-448 (2008)
[CrossRef]

Yamada, K.

T. Tsuchizawa, K. Yamada, H. Fukuda, T. Watanabe, J. Takahashi, M. Takahashi, T. Shoji, E. Tamechika, S. Itabashi, and H. Morita, "Microphotonics Devices Based on Silicon Micro-Fabrication Technology," IEEE J. Sel. Top. Quantum Electron. 11, 232-240 (2005).
[CrossRef]

Yin, T.

Yu, M.

K. W. Ang, S. Zhu, M. Yu, G.-Q. Lo, and D.-L. Kwong, "High performance waveguided Ge on SOI Metal-semiconductor-Metal photodetectors with novel silicon carbon (Si:C) schottky barrier enhancement layer," IEEE Photon. Technol. Lett. 20, 754-756 (2008)
[CrossRef]

Yu, M. B.

J. Wang, W. Y. Loh, K.T. Chua, H. Zang, Y. Z. Xiong, T. H. Loh, M. B. Yu, S. J. Lee, G.-Q. Lo, and D.-L. Kwong, "Evanescent-coupled Ge p-i-n photodetectors on Si-waveguide with SEG-Ge and comparative study of lateral and vertical p-i-n configurations," IEEE Electron. Dev. Lett. 29, 445-448 (2008)
[CrossRef]

Zang, H.

J. Wang, W. Y. Loh, K.T. Chua, H. Zang, Y. Z. Xiong, T. H. Loh, M. B. Yu, S. J. Lee, G.-Q. Lo, and D.-L. Kwong, "Evanescent-coupled Ge p-i-n photodetectors on Si-waveguide with SEG-Ge and comparative study of lateral and vertical p-i-n configurations," IEEE Electron. Dev. Lett. 29, 445-448 (2008)
[CrossRef]

Zhu, S.

K. W. Ang, S. Zhu, M. Yu, G.-Q. Lo, and D.-L. Kwong, "High performance waveguided Ge on SOI Metal-semiconductor-Metal photodetectors with novel silicon carbon (Si:C) schottky barrier enhancement layer," IEEE Photon. Technol. Lett. 20, 754-756 (2008)
[CrossRef]

Appl. Phys. Lett. (2)

L. Vivien, S. Lardenois, D. Pascal, S. Laval, E. Cassan, J-L. Cercus, A. Koster, J-M. Fédéli, and M. Heitzmann, "Experimental demonstration of a low-loss optical H-tree distribution using silicon-on-insulator microwaveguides," Appl. Phys. Lett. 85, 701-703 (2004).
[CrossRef]

L. Vivien, D. Marris-Morini, J-M. Fédéli, M. Rouvière, J-F. Damlencourt, L. El Melhaoui, X. Le Roux, P. Crozat, J. Mangeney, E. Cassan, and S. Laval, "Metal-semiconductor-metal Ge photodetectors integrated in Silicon waveguides," Appl. Phys. Lett. 92, 151114-151116 (2008)
[CrossRef]

IEEE Electron. Dev. Lett. (1)

J. Wang, W. Y. Loh, K.T. Chua, H. Zang, Y. Z. Xiong, T. H. Loh, M. B. Yu, S. J. Lee, G.-Q. Lo, and D.-L. Kwong, "Evanescent-coupled Ge p-i-n photodetectors on Si-waveguide with SEG-Ge and comparative study of lateral and vertical p-i-n configurations," IEEE Electron. Dev. Lett. 29, 445-448 (2008)
[CrossRef]

IEEE J. Sel. Top. Quantum Electron. (1)

T. Tsuchizawa, K. Yamada, H. Fukuda, T. Watanabe, J. Takahashi, M. Takahashi, T. Shoji, E. Tamechika, S. Itabashi, and H. Morita, "Microphotonics Devices Based on Silicon Micro-Fabrication Technology," IEEE J. Sel. Top. Quantum Electron. 11, 232-240 (2005).
[CrossRef]

IEEE Photon. Technol. Lett. (2)

K. W. Ang, S. Zhu, M. Yu, G.-Q. Lo, and D.-L. Kwong, "High performance waveguided Ge on SOI Metal-semiconductor-Metal photodetectors with novel silicon carbon (Si:C) schottky barrier enhancement layer," IEEE Photon. Technol. Lett. 20, 754-756 (2008)
[CrossRef]

P. Dumon, W. Bogaerts, V. Wiaux, J. Wouters, S. Beckx, J. Van Campenhout, D. Taillaert, B. Luyssaert, P. Bienstman, D. Van Thourhout, and R. Baets, "Low-loss SOI photonic wires and ring resonators fabricated with deep UV lithography," IEEE Photon. Technol. Lett. 16, 1328-1330 (2004).
[CrossRef]

J. Opt. Soc. Am A (1)

A. Koster, E. Cassan, S. Laval, L. Vivien, and D. Pascal, "Ultra-compact splitter for submicrometer silicon-on-insulator rib waveguides," J. Opt. Soc. Am A 21, 2180-2185 (2004).
[CrossRef]

Nature (1)

G. T. Reed, "The optical age of silicon," Nature 427, 595-596 (2004).
[CrossRef] [PubMed]

Opt. Express (5)

Opt. Lett. (1)

Other (1)

G. Masini, G. Capellini, J. Witzens, and C. Gunn, 4th International conference on Group IV photonics, WB2, 28, Tokyo, Japan, 19-21 September 2007.

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Figures (5)

Fig. 1.
Fig. 1.

(a) Schematic views of pin germanium photodetector integrated in SOI waveguide. The photodetector length and width are 15 μm and 3 μm, respectively. (b) cross section of the pin diode.

Fig. 2.
Fig. 2.

(a) Optical microscopy top view of the photodetector integrated at the end of SOI waveguide. The reference waveguide is a rib waveguide of the same dimensions as the input waveguide, covered by SiO2, and that is used for optical responsivity calibration (b) SEM cross-section view of the complete pin Ge photodetector.

Fig. 3.
Fig. 3.

Dark current as a function of voltage of Ge pin diode integrated in SOI waveguide. The Ge mesa width and length are 3 μm and 15 μm, respectively.

Fig. 4.
Fig. 4.

Responsivity of the pin Ge photodetector integrated in SOI waveguide (a) as a function of the reverse bias a 1.55 μm and (b) as a function of the wavelength at -0.5 V bias. The photodetector length and width are 15 μm and 3 μm respectively.

Fig. 3.
Fig. 3.

Normalized optical responses versus frequency for pin diode integrated in SOI rib waveguide under 0V, -2V, and -4V biases at the wavelength of 1.53μm. The photodetector length is 15 μm and the mesa width is 3 μm.

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