Abstract

Signal transmission experiments were performed at 170 Gbit/s in an integrated Al2O3:Er3+ waveguide amplifier to investigate its potential application in high-speed photonic integrated circuits. Net internal gain of up to 11 dB was measured for a continuous-wave 1532 nm signal under 1480 nm pumping, with a threshold pump power of 4 mW. A differential group delay of 2 ps between the TE and TM fundamental modes of the 5.7-cm-long amplifier was measured. When selecting a single polarization open eye diagrams and bit error rates equal to those of the transmission system without the amplifier were observed for a 1550 nm signal encoded with a 170 Gbit/s return-to-zero pseudo-random 27-1 bit sequence.

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    [CrossRef]

2009

K. Wörhoff, J. D. B. Bradley, F. Ay, D. Geskus, T. Blauwendraat, and M. Pollnau, “Reliable low-cost fabrication of low-loss Al2O3:Er3+ waveguides with 5.4-dB optical gain,” IEEE J. Quantum Electron. 45(5), 454–461 (2009).
[CrossRef]

2008

Y. Kang, H.-D. Liu, M. Morse, M. J. Paniccia, M. Zadka, S. Litski, G. Sarid, A. Pauchard, Y.-H. Kuo, H.-W. Chen, W. S. Zaoui, J. E. Bowers, A. Beling, D. C. McIntosh, X. Zheng, and J. C. Campbell, “Monolithic germanium/silicon avalanche photodiodes with 340 GHz gain-bandwidth product,” Nat. Photonics 3(1), 59–63 (2008).
[CrossRef]

2007

J. D. B. Bradley, F. Ay, K. Wörhoff, and M. Pollnau, “Fabrication of low-loss channel waveguides in Al2O3 and Y2O3 layers by inductively coupled plasma reactive ion etching,” Appl. Phys. B 89(2-3), 311–318 (2007).
[CrossRef]

M. Thual, D. Malarde, B. Abhervé-Guégen, P. Rochard, and P. Chanclou, “Truncated Gaussian beams through microlenses based on a graded-index section,” Opt. Eng. 46(1), 015402 (2007).
[CrossRef]

F. Lelarge, B. Dagens, J. Renaudier, R. Brenot, A. Accard, F. Dijk, D. Make, O. L. Gouezigou, J.-G. Provost, F. Poingt, J. Landreau, O. Drisse, E. Derouin, B. Rousseau, F. Pommereau, and G.-H. Duan, “Recent advances on InAs/InP quantum dash based semiconductor lasers and optical amplifiers operating at 1.55 μm,” IEEE J. Sel. Top. Quantum Electron. 13(1), 111–124 (2007).
[CrossRef]

S. Demiguel, N. Sahri, M. Hartlaub, F. Blache, H. Gariah, S. Vuiye, D. Carpentier, D. Barbier, and J. C. Campbell, “Low-cost photoreceiver integrating an EDWA and waveguide PIN photodiode for 40 Gbit/s applications,” Electron. Lett. 43(1), 51–52 (2007).
[CrossRef]

2005

S. Ferber, R. Ludwig, C. Boerner, C. Schubert, C. Schmidt-Langhorst, M. Kroh, V. Marembert, and H. G. Weber, “160 Gbit/s DPSK transmission over 320 km fibre link with high long-term stability,” Electron. Lett. 41(4), 200–202 (2005).
[CrossRef]

2004

1999

K. Wörhoff, B. J. Offrein, P. V. Lambeck, G. L. Bona, A. Driessen, G. L. Bona, and A. Driessen, “Birefringence compensation applying double-core waveguiding structures,” IEEE Photon. Technol. Lett. 11(2), 206–208 (1999).
[CrossRef]

1997

J.-M. P. Delavaux, S. Granlund, O. Mizuhara, L. D. Tzeng, D. Barbier, M. Rattay, F. St. Andre, and A. Kevorkian, “Integrated optics erbium-ytterbium amplifier system in 10-Gb/s fiber transmission experiment,” IEEE Photon. Technol. Lett. 9(2), 247–249 (1997).
[CrossRef]

1996

G. N. van den Hoven, R. J. I. M. Koper, A. Polman, C. van Dam, K. W. M. van Uffelen, and M. K. Smit, “Net optical gain at 1.53 μm in Er-doped Al2O3 waveguides on silicon,” Appl. Phys. Lett. 68(14), 1886–1888 (1996).
[CrossRef]

1993

G. Nykolak, M. Haner, P. C. Becker, J. Shmulovich, and Y. H. Wong, “Systems evaluation of an Er3+-doped planar waveguide amplifier,” IEEE Photon. Technol. Lett. 5(10), 1185–1187 (1993).
[CrossRef]

1992

T. Kitagawa, K. Hattori, K. Shuto, M. Yasu, M. Kobayashi, and M. Horiguchi, “Amplification in erbium-doped silica-based planar lightwave circuits,” Electron. Lett. 28(19), 1818–1819 (1992).
[CrossRef]

Abhervé-Guégen, B.

M. Thual, D. Malarde, B. Abhervé-Guégen, P. Rochard, and P. Chanclou, “Truncated Gaussian beams through microlenses based on a graded-index section,” Opt. Eng. 46(1), 015402 (2007).
[CrossRef]

Accard, A.

F. Lelarge, B. Dagens, J. Renaudier, R. Brenot, A. Accard, F. Dijk, D. Make, O. L. Gouezigou, J.-G. Provost, F. Poingt, J. Landreau, O. Drisse, E. Derouin, B. Rousseau, F. Pommereau, and G.-H. Duan, “Recent advances on InAs/InP quantum dash based semiconductor lasers and optical amplifiers operating at 1.55 μm,” IEEE J. Sel. Top. Quantum Electron. 13(1), 111–124 (2007).
[CrossRef]

Ay, F.

K. Wörhoff, J. D. B. Bradley, F. Ay, D. Geskus, T. Blauwendraat, and M. Pollnau, “Reliable low-cost fabrication of low-loss Al2O3:Er3+ waveguides with 5.4-dB optical gain,” IEEE J. Quantum Electron. 45(5), 454–461 (2009).
[CrossRef]

J. D. B. Bradley, F. Ay, K. Wörhoff, and M. Pollnau, “Fabrication of low-loss channel waveguides in Al2O3 and Y2O3 layers by inductively coupled plasma reactive ion etching,” Appl. Phys. B 89(2-3), 311–318 (2007).
[CrossRef]

Barbier, D.

S. Demiguel, N. Sahri, M. Hartlaub, F. Blache, H. Gariah, S. Vuiye, D. Carpentier, D. Barbier, and J. C. Campbell, “Low-cost photoreceiver integrating an EDWA and waveguide PIN photodiode for 40 Gbit/s applications,” Electron. Lett. 43(1), 51–52 (2007).
[CrossRef]

J.-M. P. Delavaux, S. Granlund, O. Mizuhara, L. D. Tzeng, D. Barbier, M. Rattay, F. St. Andre, and A. Kevorkian, “Integrated optics erbium-ytterbium amplifier system in 10-Gb/s fiber transmission experiment,” IEEE Photon. Technol. Lett. 9(2), 247–249 (1997).
[CrossRef]

Becker, P. C.

G. Nykolak, M. Haner, P. C. Becker, J. Shmulovich, and Y. H. Wong, “Systems evaluation of an Er3+-doped planar waveguide amplifier,” IEEE Photon. Technol. Lett. 5(10), 1185–1187 (1993).
[CrossRef]

Beling, A.

Y. Kang, H.-D. Liu, M. Morse, M. J. Paniccia, M. Zadka, S. Litski, G. Sarid, A. Pauchard, Y.-H. Kuo, H.-W. Chen, W. S. Zaoui, J. E. Bowers, A. Beling, D. C. McIntosh, X. Zheng, and J. C. Campbell, “Monolithic germanium/silicon avalanche photodiodes with 340 GHz gain-bandwidth product,” Nat. Photonics 3(1), 59–63 (2008).
[CrossRef]

Blache, F.

S. Demiguel, N. Sahri, M. Hartlaub, F. Blache, H. Gariah, S. Vuiye, D. Carpentier, D. Barbier, and J. C. Campbell, “Low-cost photoreceiver integrating an EDWA and waveguide PIN photodiode for 40 Gbit/s applications,” Electron. Lett. 43(1), 51–52 (2007).
[CrossRef]

Blauwendraat, T.

K. Wörhoff, J. D. B. Bradley, F. Ay, D. Geskus, T. Blauwendraat, and M. Pollnau, “Reliable low-cost fabrication of low-loss Al2O3:Er3+ waveguides with 5.4-dB optical gain,” IEEE J. Quantum Electron. 45(5), 454–461 (2009).
[CrossRef]

Boerner, C.

S. Ferber, R. Ludwig, C. Boerner, C. Schubert, C. Schmidt-Langhorst, M. Kroh, V. Marembert, and H. G. Weber, “160 Gbit/s DPSK transmission over 320 km fibre link with high long-term stability,” Electron. Lett. 41(4), 200–202 (2005).
[CrossRef]

Bona, G. L.

K. Wörhoff, B. J. Offrein, P. V. Lambeck, G. L. Bona, A. Driessen, G. L. Bona, and A. Driessen, “Birefringence compensation applying double-core waveguiding structures,” IEEE Photon. Technol. Lett. 11(2), 206–208 (1999).
[CrossRef]

K. Wörhoff, B. J. Offrein, P. V. Lambeck, G. L. Bona, A. Driessen, G. L. Bona, and A. Driessen, “Birefringence compensation applying double-core waveguiding structures,” IEEE Photon. Technol. Lett. 11(2), 206–208 (1999).
[CrossRef]

Bowers, J. E.

Y. Kang, H.-D. Liu, M. Morse, M. J. Paniccia, M. Zadka, S. Litski, G. Sarid, A. Pauchard, Y.-H. Kuo, H.-W. Chen, W. S. Zaoui, J. E. Bowers, A. Beling, D. C. McIntosh, X. Zheng, and J. C. Campbell, “Monolithic germanium/silicon avalanche photodiodes with 340 GHz gain-bandwidth product,” Nat. Photonics 3(1), 59–63 (2008).
[CrossRef]

Bradley, J. D. B.

K. Wörhoff, J. D. B. Bradley, F. Ay, D. Geskus, T. Blauwendraat, and M. Pollnau, “Reliable low-cost fabrication of low-loss Al2O3:Er3+ waveguides with 5.4-dB optical gain,” IEEE J. Quantum Electron. 45(5), 454–461 (2009).
[CrossRef]

J. D. B. Bradley, F. Ay, K. Wörhoff, and M. Pollnau, “Fabrication of low-loss channel waveguides in Al2O3 and Y2O3 layers by inductively coupled plasma reactive ion etching,” Appl. Phys. B 89(2-3), 311–318 (2007).
[CrossRef]

Brenot, R.

F. Lelarge, B. Dagens, J. Renaudier, R. Brenot, A. Accard, F. Dijk, D. Make, O. L. Gouezigou, J.-G. Provost, F. Poingt, J. Landreau, O. Drisse, E. Derouin, B. Rousseau, F. Pommereau, and G.-H. Duan, “Recent advances on InAs/InP quantum dash based semiconductor lasers and optical amplifiers operating at 1.55 μm,” IEEE J. Sel. Top. Quantum Electron. 13(1), 111–124 (2007).
[CrossRef]

Campbell, J. C.

Y. Kang, H.-D. Liu, M. Morse, M. J. Paniccia, M. Zadka, S. Litski, G. Sarid, A. Pauchard, Y.-H. Kuo, H.-W. Chen, W. S. Zaoui, J. E. Bowers, A. Beling, D. C. McIntosh, X. Zheng, and J. C. Campbell, “Monolithic germanium/silicon avalanche photodiodes with 340 GHz gain-bandwidth product,” Nat. Photonics 3(1), 59–63 (2008).
[CrossRef]

S. Demiguel, N. Sahri, M. Hartlaub, F. Blache, H. Gariah, S. Vuiye, D. Carpentier, D. Barbier, and J. C. Campbell, “Low-cost photoreceiver integrating an EDWA and waveguide PIN photodiode for 40 Gbit/s applications,” Electron. Lett. 43(1), 51–52 (2007).
[CrossRef]

Carpentier, D.

S. Demiguel, N. Sahri, M. Hartlaub, F. Blache, H. Gariah, S. Vuiye, D. Carpentier, D. Barbier, and J. C. Campbell, “Low-cost photoreceiver integrating an EDWA and waveguide PIN photodiode for 40 Gbit/s applications,” Electron. Lett. 43(1), 51–52 (2007).
[CrossRef]

Chanclou, P.

M. Thual, D. Malarde, B. Abhervé-Guégen, P. Rochard, and P. Chanclou, “Truncated Gaussian beams through microlenses based on a graded-index section,” Opt. Eng. 46(1), 015402 (2007).
[CrossRef]

Chen, H.-W.

Y. Kang, H.-D. Liu, M. Morse, M. J. Paniccia, M. Zadka, S. Litski, G. Sarid, A. Pauchard, Y.-H. Kuo, H.-W. Chen, W. S. Zaoui, J. E. Bowers, A. Beling, D. C. McIntosh, X. Zheng, and J. C. Campbell, “Monolithic germanium/silicon avalanche photodiodes with 340 GHz gain-bandwidth product,” Nat. Photonics 3(1), 59–63 (2008).
[CrossRef]

Dagens, B.

F. Lelarge, B. Dagens, J. Renaudier, R. Brenot, A. Accard, F. Dijk, D. Make, O. L. Gouezigou, J.-G. Provost, F. Poingt, J. Landreau, O. Drisse, E. Derouin, B. Rousseau, F. Pommereau, and G.-H. Duan, “Recent advances on InAs/InP quantum dash based semiconductor lasers and optical amplifiers operating at 1.55 μm,” IEEE J. Sel. Top. Quantum Electron. 13(1), 111–124 (2007).
[CrossRef]

Delavaux, J.-M. P.

J.-M. P. Delavaux, S. Granlund, O. Mizuhara, L. D. Tzeng, D. Barbier, M. Rattay, F. St. Andre, and A. Kevorkian, “Integrated optics erbium-ytterbium amplifier system in 10-Gb/s fiber transmission experiment,” IEEE Photon. Technol. Lett. 9(2), 247–249 (1997).
[CrossRef]

Demiguel, S.

S. Demiguel, N. Sahri, M. Hartlaub, F. Blache, H. Gariah, S. Vuiye, D. Carpentier, D. Barbier, and J. C. Campbell, “Low-cost photoreceiver integrating an EDWA and waveguide PIN photodiode for 40 Gbit/s applications,” Electron. Lett. 43(1), 51–52 (2007).
[CrossRef]

Derouin, E.

F. Lelarge, B. Dagens, J. Renaudier, R. Brenot, A. Accard, F. Dijk, D. Make, O. L. Gouezigou, J.-G. Provost, F. Poingt, J. Landreau, O. Drisse, E. Derouin, B. Rousseau, F. Pommereau, and G.-H. Duan, “Recent advances on InAs/InP quantum dash based semiconductor lasers and optical amplifiers operating at 1.55 μm,” IEEE J. Sel. Top. Quantum Electron. 13(1), 111–124 (2007).
[CrossRef]

Dijk, F.

F. Lelarge, B. Dagens, J. Renaudier, R. Brenot, A. Accard, F. Dijk, D. Make, O. L. Gouezigou, J.-G. Provost, F. Poingt, J. Landreau, O. Drisse, E. Derouin, B. Rousseau, F. Pommereau, and G.-H. Duan, “Recent advances on InAs/InP quantum dash based semiconductor lasers and optical amplifiers operating at 1.55 μm,” IEEE J. Sel. Top. Quantum Electron. 13(1), 111–124 (2007).
[CrossRef]

Driessen, A.

K. Wörhoff, B. J. Offrein, P. V. Lambeck, G. L. Bona, A. Driessen, G. L. Bona, and A. Driessen, “Birefringence compensation applying double-core waveguiding structures,” IEEE Photon. Technol. Lett. 11(2), 206–208 (1999).
[CrossRef]

K. Wörhoff, B. J. Offrein, P. V. Lambeck, G. L. Bona, A. Driessen, G. L. Bona, and A. Driessen, “Birefringence compensation applying double-core waveguiding structures,” IEEE Photon. Technol. Lett. 11(2), 206–208 (1999).
[CrossRef]

Drisse, O.

F. Lelarge, B. Dagens, J. Renaudier, R. Brenot, A. Accard, F. Dijk, D. Make, O. L. Gouezigou, J.-G. Provost, F. Poingt, J. Landreau, O. Drisse, E. Derouin, B. Rousseau, F. Pommereau, and G.-H. Duan, “Recent advances on InAs/InP quantum dash based semiconductor lasers and optical amplifiers operating at 1.55 μm,” IEEE J. Sel. Top. Quantum Electron. 13(1), 111–124 (2007).
[CrossRef]

Duan, G.-H.

F. Lelarge, B. Dagens, J. Renaudier, R. Brenot, A. Accard, F. Dijk, D. Make, O. L. Gouezigou, J.-G. Provost, F. Poingt, J. Landreau, O. Drisse, E. Derouin, B. Rousseau, F. Pommereau, and G.-H. Duan, “Recent advances on InAs/InP quantum dash based semiconductor lasers and optical amplifiers operating at 1.55 μm,” IEEE J. Sel. Top. Quantum Electron. 13(1), 111–124 (2007).
[CrossRef]

Ferber, S.

S. Ferber, R. Ludwig, C. Boerner, C. Schubert, C. Schmidt-Langhorst, M. Kroh, V. Marembert, and H. G. Weber, “160 Gbit/s DPSK transmission over 320 km fibre link with high long-term stability,” Electron. Lett. 41(4), 200–202 (2005).
[CrossRef]

Gariah, H.

S. Demiguel, N. Sahri, M. Hartlaub, F. Blache, H. Gariah, S. Vuiye, D. Carpentier, D. Barbier, and J. C. Campbell, “Low-cost photoreceiver integrating an EDWA and waveguide PIN photodiode for 40 Gbit/s applications,” Electron. Lett. 43(1), 51–52 (2007).
[CrossRef]

Geskus, D.

K. Wörhoff, J. D. B. Bradley, F. Ay, D. Geskus, T. Blauwendraat, and M. Pollnau, “Reliable low-cost fabrication of low-loss Al2O3:Er3+ waveguides with 5.4-dB optical gain,” IEEE J. Quantum Electron. 45(5), 454–461 (2009).
[CrossRef]

Gouezigou, O. L.

F. Lelarge, B. Dagens, J. Renaudier, R. Brenot, A. Accard, F. Dijk, D. Make, O. L. Gouezigou, J.-G. Provost, F. Poingt, J. Landreau, O. Drisse, E. Derouin, B. Rousseau, F. Pommereau, and G.-H. Duan, “Recent advances on InAs/InP quantum dash based semiconductor lasers and optical amplifiers operating at 1.55 μm,” IEEE J. Sel. Top. Quantum Electron. 13(1), 111–124 (2007).
[CrossRef]

Granlund, S.

J.-M. P. Delavaux, S. Granlund, O. Mizuhara, L. D. Tzeng, D. Barbier, M. Rattay, F. St. Andre, and A. Kevorkian, “Integrated optics erbium-ytterbium amplifier system in 10-Gb/s fiber transmission experiment,” IEEE Photon. Technol. Lett. 9(2), 247–249 (1997).
[CrossRef]

Haner, M.

G. Nykolak, M. Haner, P. C. Becker, J. Shmulovich, and Y. H. Wong, “Systems evaluation of an Er3+-doped planar waveguide amplifier,” IEEE Photon. Technol. Lett. 5(10), 1185–1187 (1993).
[CrossRef]

Hartlaub, M.

S. Demiguel, N. Sahri, M. Hartlaub, F. Blache, H. Gariah, S. Vuiye, D. Carpentier, D. Barbier, and J. C. Campbell, “Low-cost photoreceiver integrating an EDWA and waveguide PIN photodiode for 40 Gbit/s applications,” Electron. Lett. 43(1), 51–52 (2007).
[CrossRef]

Hattori, K.

T. Kitagawa, K. Hattori, K. Shuto, M. Yasu, M. Kobayashi, and M. Horiguchi, “Amplification in erbium-doped silica-based planar lightwave circuits,” Electron. Lett. 28(19), 1818–1819 (1992).
[CrossRef]

Horiguchi, M.

T. Kitagawa, K. Hattori, K. Shuto, M. Yasu, M. Kobayashi, and M. Horiguchi, “Amplification in erbium-doped silica-based planar lightwave circuits,” Electron. Lett. 28(19), 1818–1819 (1992).
[CrossRef]

Kang, Y.

Y. Kang, H.-D. Liu, M. Morse, M. J. Paniccia, M. Zadka, S. Litski, G. Sarid, A. Pauchard, Y.-H. Kuo, H.-W. Chen, W. S. Zaoui, J. E. Bowers, A. Beling, D. C. McIntosh, X. Zheng, and J. C. Campbell, “Monolithic germanium/silicon avalanche photodiodes with 340 GHz gain-bandwidth product,” Nat. Photonics 3(1), 59–63 (2008).
[CrossRef]

Kevorkian, A.

J.-M. P. Delavaux, S. Granlund, O. Mizuhara, L. D. Tzeng, D. Barbier, M. Rattay, F. St. Andre, and A. Kevorkian, “Integrated optics erbium-ytterbium amplifier system in 10-Gb/s fiber transmission experiment,” IEEE Photon. Technol. Lett. 9(2), 247–249 (1997).
[CrossRef]

Kitagawa, T.

T. Kitagawa, K. Hattori, K. Shuto, M. Yasu, M. Kobayashi, and M. Horiguchi, “Amplification in erbium-doped silica-based planar lightwave circuits,” Electron. Lett. 28(19), 1818–1819 (1992).
[CrossRef]

Kobayashi, M.

T. Kitagawa, K. Hattori, K. Shuto, M. Yasu, M. Kobayashi, and M. Horiguchi, “Amplification in erbium-doped silica-based planar lightwave circuits,” Electron. Lett. 28(19), 1818–1819 (1992).
[CrossRef]

Koper, R. J. I. M.

G. N. van den Hoven, R. J. I. M. Koper, A. Polman, C. van Dam, K. W. M. van Uffelen, and M. K. Smit, “Net optical gain at 1.53 μm in Er-doped Al2O3 waveguides on silicon,” Appl. Phys. Lett. 68(14), 1886–1888 (1996).
[CrossRef]

Kroh, M.

S. Ferber, R. Ludwig, C. Boerner, C. Schubert, C. Schmidt-Langhorst, M. Kroh, V. Marembert, and H. G. Weber, “160 Gbit/s DPSK transmission over 320 km fibre link with high long-term stability,” Electron. Lett. 41(4), 200–202 (2005).
[CrossRef]

Kuo, Y.-H.

Y. Kang, H.-D. Liu, M. Morse, M. J. Paniccia, M. Zadka, S. Litski, G. Sarid, A. Pauchard, Y.-H. Kuo, H.-W. Chen, W. S. Zaoui, J. E. Bowers, A. Beling, D. C. McIntosh, X. Zheng, and J. C. Campbell, “Monolithic germanium/silicon avalanche photodiodes with 340 GHz gain-bandwidth product,” Nat. Photonics 3(1), 59–63 (2008).
[CrossRef]

Lambeck, P. V.

K. Wörhoff, B. J. Offrein, P. V. Lambeck, G. L. Bona, A. Driessen, G. L. Bona, and A. Driessen, “Birefringence compensation applying double-core waveguiding structures,” IEEE Photon. Technol. Lett. 11(2), 206–208 (1999).
[CrossRef]

Landreau, J.

F. Lelarge, B. Dagens, J. Renaudier, R. Brenot, A. Accard, F. Dijk, D. Make, O. L. Gouezigou, J.-G. Provost, F. Poingt, J. Landreau, O. Drisse, E. Derouin, B. Rousseau, F. Pommereau, and G.-H. Duan, “Recent advances on InAs/InP quantum dash based semiconductor lasers and optical amplifiers operating at 1.55 μm,” IEEE J. Sel. Top. Quantum Electron. 13(1), 111–124 (2007).
[CrossRef]

Lelarge, F.

F. Lelarge, B. Dagens, J. Renaudier, R. Brenot, A. Accard, F. Dijk, D. Make, O. L. Gouezigou, J.-G. Provost, F. Poingt, J. Landreau, O. Drisse, E. Derouin, B. Rousseau, F. Pommereau, and G.-H. Duan, “Recent advances on InAs/InP quantum dash based semiconductor lasers and optical amplifiers operating at 1.55 μm,” IEEE J. Sel. Top. Quantum Electron. 13(1), 111–124 (2007).
[CrossRef]

Litski, S.

Y. Kang, H.-D. Liu, M. Morse, M. J. Paniccia, M. Zadka, S. Litski, G. Sarid, A. Pauchard, Y.-H. Kuo, H.-W. Chen, W. S. Zaoui, J. E. Bowers, A. Beling, D. C. McIntosh, X. Zheng, and J. C. Campbell, “Monolithic germanium/silicon avalanche photodiodes with 340 GHz gain-bandwidth product,” Nat. Photonics 3(1), 59–63 (2008).
[CrossRef]

Liu, H.-D.

Y. Kang, H.-D. Liu, M. Morse, M. J. Paniccia, M. Zadka, S. Litski, G. Sarid, A. Pauchard, Y.-H. Kuo, H.-W. Chen, W. S. Zaoui, J. E. Bowers, A. Beling, D. C. McIntosh, X. Zheng, and J. C. Campbell, “Monolithic germanium/silicon avalanche photodiodes with 340 GHz gain-bandwidth product,” Nat. Photonics 3(1), 59–63 (2008).
[CrossRef]

Ludwig, R.

S. Ferber, R. Ludwig, C. Boerner, C. Schubert, C. Schmidt-Langhorst, M. Kroh, V. Marembert, and H. G. Weber, “160 Gbit/s DPSK transmission over 320 km fibre link with high long-term stability,” Electron. Lett. 41(4), 200–202 (2005).
[CrossRef]

Make, D.

F. Lelarge, B. Dagens, J. Renaudier, R. Brenot, A. Accard, F. Dijk, D. Make, O. L. Gouezigou, J.-G. Provost, F. Poingt, J. Landreau, O. Drisse, E. Derouin, B. Rousseau, F. Pommereau, and G.-H. Duan, “Recent advances on InAs/InP quantum dash based semiconductor lasers and optical amplifiers operating at 1.55 μm,” IEEE J. Sel. Top. Quantum Electron. 13(1), 111–124 (2007).
[CrossRef]

Malarde, D.

M. Thual, D. Malarde, B. Abhervé-Guégen, P. Rochard, and P. Chanclou, “Truncated Gaussian beams through microlenses based on a graded-index section,” Opt. Eng. 46(1), 015402 (2007).
[CrossRef]

Marembert, V.

S. Ferber, R. Ludwig, C. Boerner, C. Schubert, C. Schmidt-Langhorst, M. Kroh, V. Marembert, and H. G. Weber, “160 Gbit/s DPSK transmission over 320 km fibre link with high long-term stability,” Electron. Lett. 41(4), 200–202 (2005).
[CrossRef]

McIntosh, D. C.

Y. Kang, H.-D. Liu, M. Morse, M. J. Paniccia, M. Zadka, S. Litski, G. Sarid, A. Pauchard, Y.-H. Kuo, H.-W. Chen, W. S. Zaoui, J. E. Bowers, A. Beling, D. C. McIntosh, X. Zheng, and J. C. Campbell, “Monolithic germanium/silicon avalanche photodiodes with 340 GHz gain-bandwidth product,” Nat. Photonics 3(1), 59–63 (2008).
[CrossRef]

Mizuhara, O.

J.-M. P. Delavaux, S. Granlund, O. Mizuhara, L. D. Tzeng, D. Barbier, M. Rattay, F. St. Andre, and A. Kevorkian, “Integrated optics erbium-ytterbium amplifier system in 10-Gb/s fiber transmission experiment,” IEEE Photon. Technol. Lett. 9(2), 247–249 (1997).
[CrossRef]

Morse, M.

Y. Kang, H.-D. Liu, M. Morse, M. J. Paniccia, M. Zadka, S. Litski, G. Sarid, A. Pauchard, Y.-H. Kuo, H.-W. Chen, W. S. Zaoui, J. E. Bowers, A. Beling, D. C. McIntosh, X. Zheng, and J. C. Campbell, “Monolithic germanium/silicon avalanche photodiodes with 340 GHz gain-bandwidth product,” Nat. Photonics 3(1), 59–63 (2008).
[CrossRef]

Nykolak, G.

G. Nykolak, M. Haner, P. C. Becker, J. Shmulovich, and Y. H. Wong, “Systems evaluation of an Er3+-doped planar waveguide amplifier,” IEEE Photon. Technol. Lett. 5(10), 1185–1187 (1993).
[CrossRef]

Offrein, B. J.

K. Wörhoff, B. J. Offrein, P. V. Lambeck, G. L. Bona, A. Driessen, G. L. Bona, and A. Driessen, “Birefringence compensation applying double-core waveguiding structures,” IEEE Photon. Technol. Lett. 11(2), 206–208 (1999).
[CrossRef]

Paniccia, M. J.

Y. Kang, H.-D. Liu, M. Morse, M. J. Paniccia, M. Zadka, S. Litski, G. Sarid, A. Pauchard, Y.-H. Kuo, H.-W. Chen, W. S. Zaoui, J. E. Bowers, A. Beling, D. C. McIntosh, X. Zheng, and J. C. Campbell, “Monolithic germanium/silicon avalanche photodiodes with 340 GHz gain-bandwidth product,” Nat. Photonics 3(1), 59–63 (2008).
[CrossRef]

Pauchard, A.

Y. Kang, H.-D. Liu, M. Morse, M. J. Paniccia, M. Zadka, S. Litski, G. Sarid, A. Pauchard, Y.-H. Kuo, H.-W. Chen, W. S. Zaoui, J. E. Bowers, A. Beling, D. C. McIntosh, X. Zheng, and J. C. Campbell, “Monolithic germanium/silicon avalanche photodiodes with 340 GHz gain-bandwidth product,” Nat. Photonics 3(1), 59–63 (2008).
[CrossRef]

Poingt, F.

F. Lelarge, B. Dagens, J. Renaudier, R. Brenot, A. Accard, F. Dijk, D. Make, O. L. Gouezigou, J.-G. Provost, F. Poingt, J. Landreau, O. Drisse, E. Derouin, B. Rousseau, F. Pommereau, and G.-H. Duan, “Recent advances on InAs/InP quantum dash based semiconductor lasers and optical amplifiers operating at 1.55 μm,” IEEE J. Sel. Top. Quantum Electron. 13(1), 111–124 (2007).
[CrossRef]

Pollnau, M.

K. Wörhoff, J. D. B. Bradley, F. Ay, D. Geskus, T. Blauwendraat, and M. Pollnau, “Reliable low-cost fabrication of low-loss Al2O3:Er3+ waveguides with 5.4-dB optical gain,” IEEE J. Quantum Electron. 45(5), 454–461 (2009).
[CrossRef]

J. D. B. Bradley, F. Ay, K. Wörhoff, and M. Pollnau, “Fabrication of low-loss channel waveguides in Al2O3 and Y2O3 layers by inductively coupled plasma reactive ion etching,” Appl. Phys. B 89(2-3), 311–318 (2007).
[CrossRef]

Polman, A.

G. N. van den Hoven, R. J. I. M. Koper, A. Polman, C. van Dam, K. W. M. van Uffelen, and M. K. Smit, “Net optical gain at 1.53 μm in Er-doped Al2O3 waveguides on silicon,” Appl. Phys. Lett. 68(14), 1886–1888 (1996).
[CrossRef]

Pommereau, F.

F. Lelarge, B. Dagens, J. Renaudier, R. Brenot, A. Accard, F. Dijk, D. Make, O. L. Gouezigou, J.-G. Provost, F. Poingt, J. Landreau, O. Drisse, E. Derouin, B. Rousseau, F. Pommereau, and G.-H. Duan, “Recent advances on InAs/InP quantum dash based semiconductor lasers and optical amplifiers operating at 1.55 μm,” IEEE J. Sel. Top. Quantum Electron. 13(1), 111–124 (2007).
[CrossRef]

Provost, J.-G.

F. Lelarge, B. Dagens, J. Renaudier, R. Brenot, A. Accard, F. Dijk, D. Make, O. L. Gouezigou, J.-G. Provost, F. Poingt, J. Landreau, O. Drisse, E. Derouin, B. Rousseau, F. Pommereau, and G.-H. Duan, “Recent advances on InAs/InP quantum dash based semiconductor lasers and optical amplifiers operating at 1.55 μm,” IEEE J. Sel. Top. Quantum Electron. 13(1), 111–124 (2007).
[CrossRef]

Rattay, M.

J.-M. P. Delavaux, S. Granlund, O. Mizuhara, L. D. Tzeng, D. Barbier, M. Rattay, F. St. Andre, and A. Kevorkian, “Integrated optics erbium-ytterbium amplifier system in 10-Gb/s fiber transmission experiment,” IEEE Photon. Technol. Lett. 9(2), 247–249 (1997).
[CrossRef]

Renaudier, J.

F. Lelarge, B. Dagens, J. Renaudier, R. Brenot, A. Accard, F. Dijk, D. Make, O. L. Gouezigou, J.-G. Provost, F. Poingt, J. Landreau, O. Drisse, E. Derouin, B. Rousseau, F. Pommereau, and G.-H. Duan, “Recent advances on InAs/InP quantum dash based semiconductor lasers and optical amplifiers operating at 1.55 μm,” IEEE J. Sel. Top. Quantum Electron. 13(1), 111–124 (2007).
[CrossRef]

Rochard, P.

M. Thual, D. Malarde, B. Abhervé-Guégen, P. Rochard, and P. Chanclou, “Truncated Gaussian beams through microlenses based on a graded-index section,” Opt. Eng. 46(1), 015402 (2007).
[CrossRef]

Rousseau, B.

F. Lelarge, B. Dagens, J. Renaudier, R. Brenot, A. Accard, F. Dijk, D. Make, O. L. Gouezigou, J.-G. Provost, F. Poingt, J. Landreau, O. Drisse, E. Derouin, B. Rousseau, F. Pommereau, and G.-H. Duan, “Recent advances on InAs/InP quantum dash based semiconductor lasers and optical amplifiers operating at 1.55 μm,” IEEE J. Sel. Top. Quantum Electron. 13(1), 111–124 (2007).
[CrossRef]

Sahri, N.

S. Demiguel, N. Sahri, M. Hartlaub, F. Blache, H. Gariah, S. Vuiye, D. Carpentier, D. Barbier, and J. C. Campbell, “Low-cost photoreceiver integrating an EDWA and waveguide PIN photodiode for 40 Gbit/s applications,” Electron. Lett. 43(1), 51–52 (2007).
[CrossRef]

Sarid, G.

Y. Kang, H.-D. Liu, M. Morse, M. J. Paniccia, M. Zadka, S. Litski, G. Sarid, A. Pauchard, Y.-H. Kuo, H.-W. Chen, W. S. Zaoui, J. E. Bowers, A. Beling, D. C. McIntosh, X. Zheng, and J. C. Campbell, “Monolithic germanium/silicon avalanche photodiodes with 340 GHz gain-bandwidth product,” Nat. Photonics 3(1), 59–63 (2008).
[CrossRef]

Schmidt-Langhorst, C.

S. Ferber, R. Ludwig, C. Boerner, C. Schubert, C. Schmidt-Langhorst, M. Kroh, V. Marembert, and H. G. Weber, “160 Gbit/s DPSK transmission over 320 km fibre link with high long-term stability,” Electron. Lett. 41(4), 200–202 (2005).
[CrossRef]

Schubert, C.

S. Ferber, R. Ludwig, C. Boerner, C. Schubert, C. Schmidt-Langhorst, M. Kroh, V. Marembert, and H. G. Weber, “160 Gbit/s DPSK transmission over 320 km fibre link with high long-term stability,” Electron. Lett. 41(4), 200–202 (2005).
[CrossRef]

Shmulovich, J.

G. Nykolak, M. Haner, P. C. Becker, J. Shmulovich, and Y. H. Wong, “Systems evaluation of an Er3+-doped planar waveguide amplifier,” IEEE Photon. Technol. Lett. 5(10), 1185–1187 (1993).
[CrossRef]

Shuto, K.

T. Kitagawa, K. Hattori, K. Shuto, M. Yasu, M. Kobayashi, and M. Horiguchi, “Amplification in erbium-doped silica-based planar lightwave circuits,” Electron. Lett. 28(19), 1818–1819 (1992).
[CrossRef]

Smit, M. K.

G. N. van den Hoven, R. J. I. M. Koper, A. Polman, C. van Dam, K. W. M. van Uffelen, and M. K. Smit, “Net optical gain at 1.53 μm in Er-doped Al2O3 waveguides on silicon,” Appl. Phys. Lett. 68(14), 1886–1888 (1996).
[CrossRef]

Spiekman, L. H.

St. Andre, F.

J.-M. P. Delavaux, S. Granlund, O. Mizuhara, L. D. Tzeng, D. Barbier, M. Rattay, F. St. Andre, and A. Kevorkian, “Integrated optics erbium-ytterbium amplifier system in 10-Gb/s fiber transmission experiment,” IEEE Photon. Technol. Lett. 9(2), 247–249 (1997).
[CrossRef]

Thual, M.

M. Thual, D. Malarde, B. Abhervé-Guégen, P. Rochard, and P. Chanclou, “Truncated Gaussian beams through microlenses based on a graded-index section,” Opt. Eng. 46(1), 015402 (2007).
[CrossRef]

Tzeng, L. D.

J.-M. P. Delavaux, S. Granlund, O. Mizuhara, L. D. Tzeng, D. Barbier, M. Rattay, F. St. Andre, and A. Kevorkian, “Integrated optics erbium-ytterbium amplifier system in 10-Gb/s fiber transmission experiment,” IEEE Photon. Technol. Lett. 9(2), 247–249 (1997).
[CrossRef]

van Dam, C.

G. N. van den Hoven, R. J. I. M. Koper, A. Polman, C. van Dam, K. W. M. van Uffelen, and M. K. Smit, “Net optical gain at 1.53 μm in Er-doped Al2O3 waveguides on silicon,” Appl. Phys. Lett. 68(14), 1886–1888 (1996).
[CrossRef]

van den Hoven, G. N.

G. N. van den Hoven, R. J. I. M. Koper, A. Polman, C. van Dam, K. W. M. van Uffelen, and M. K. Smit, “Net optical gain at 1.53 μm in Er-doped Al2O3 waveguides on silicon,” Appl. Phys. Lett. 68(14), 1886–1888 (1996).
[CrossRef]

van Uffelen, K. W. M.

G. N. van den Hoven, R. J. I. M. Koper, A. Polman, C. van Dam, K. W. M. van Uffelen, and M. K. Smit, “Net optical gain at 1.53 μm in Er-doped Al2O3 waveguides on silicon,” Appl. Phys. Lett. 68(14), 1886–1888 (1996).
[CrossRef]

Vuiye, S.

S. Demiguel, N. Sahri, M. Hartlaub, F. Blache, H. Gariah, S. Vuiye, D. Carpentier, D. Barbier, and J. C. Campbell, “Low-cost photoreceiver integrating an EDWA and waveguide PIN photodiode for 40 Gbit/s applications,” Electron. Lett. 43(1), 51–52 (2007).
[CrossRef]

Weber, H. G.

S. Ferber, R. Ludwig, C. Boerner, C. Schubert, C. Schmidt-Langhorst, M. Kroh, V. Marembert, and H. G. Weber, “160 Gbit/s DPSK transmission over 320 km fibre link with high long-term stability,” Electron. Lett. 41(4), 200–202 (2005).
[CrossRef]

Wong, Y. H.

G. Nykolak, M. Haner, P. C. Becker, J. Shmulovich, and Y. H. Wong, “Systems evaluation of an Er3+-doped planar waveguide amplifier,” IEEE Photon. Technol. Lett. 5(10), 1185–1187 (1993).
[CrossRef]

Wörhoff, K.

K. Wörhoff, J. D. B. Bradley, F. Ay, D. Geskus, T. Blauwendraat, and M. Pollnau, “Reliable low-cost fabrication of low-loss Al2O3:Er3+ waveguides with 5.4-dB optical gain,” IEEE J. Quantum Electron. 45(5), 454–461 (2009).
[CrossRef]

J. D. B. Bradley, F. Ay, K. Wörhoff, and M. Pollnau, “Fabrication of low-loss channel waveguides in Al2O3 and Y2O3 layers by inductively coupled plasma reactive ion etching,” Appl. Phys. B 89(2-3), 311–318 (2007).
[CrossRef]

K. Wörhoff, B. J. Offrein, P. V. Lambeck, G. L. Bona, A. Driessen, G. L. Bona, and A. Driessen, “Birefringence compensation applying double-core waveguiding structures,” IEEE Photon. Technol. Lett. 11(2), 206–208 (1999).
[CrossRef]

Yasu, M.

T. Kitagawa, K. Hattori, K. Shuto, M. Yasu, M. Kobayashi, and M. Horiguchi, “Amplification in erbium-doped silica-based planar lightwave circuits,” Electron. Lett. 28(19), 1818–1819 (1992).
[CrossRef]

Zadka, M.

Y. Kang, H.-D. Liu, M. Morse, M. J. Paniccia, M. Zadka, S. Litski, G. Sarid, A. Pauchard, Y.-H. Kuo, H.-W. Chen, W. S. Zaoui, J. E. Bowers, A. Beling, D. C. McIntosh, X. Zheng, and J. C. Campbell, “Monolithic germanium/silicon avalanche photodiodes with 340 GHz gain-bandwidth product,” Nat. Photonics 3(1), 59–63 (2008).
[CrossRef]

Zaoui, W. S.

Y. Kang, H.-D. Liu, M. Morse, M. J. Paniccia, M. Zadka, S. Litski, G. Sarid, A. Pauchard, Y.-H. Kuo, H.-W. Chen, W. S. Zaoui, J. E. Bowers, A. Beling, D. C. McIntosh, X. Zheng, and J. C. Campbell, “Monolithic germanium/silicon avalanche photodiodes with 340 GHz gain-bandwidth product,” Nat. Photonics 3(1), 59–63 (2008).
[CrossRef]

Zheng, X.

Y. Kang, H.-D. Liu, M. Morse, M. J. Paniccia, M. Zadka, S. Litski, G. Sarid, A. Pauchard, Y.-H. Kuo, H.-W. Chen, W. S. Zaoui, J. E. Bowers, A. Beling, D. C. McIntosh, X. Zheng, and J. C. Campbell, “Monolithic germanium/silicon avalanche photodiodes with 340 GHz gain-bandwidth product,” Nat. Photonics 3(1), 59–63 (2008).
[CrossRef]

Zimmerman, D. R.

Appl. Phys. B

J. D. B. Bradley, F. Ay, K. Wörhoff, and M. Pollnau, “Fabrication of low-loss channel waveguides in Al2O3 and Y2O3 layers by inductively coupled plasma reactive ion etching,” Appl. Phys. B 89(2-3), 311–318 (2007).
[CrossRef]

Appl. Phys. Lett.

G. N. van den Hoven, R. J. I. M. Koper, A. Polman, C. van Dam, K. W. M. van Uffelen, and M. K. Smit, “Net optical gain at 1.53 μm in Er-doped Al2O3 waveguides on silicon,” Appl. Phys. Lett. 68(14), 1886–1888 (1996).
[CrossRef]

Electron. Lett.

S. Ferber, R. Ludwig, C. Boerner, C. Schubert, C. Schmidt-Langhorst, M. Kroh, V. Marembert, and H. G. Weber, “160 Gbit/s DPSK transmission over 320 km fibre link with high long-term stability,” Electron. Lett. 41(4), 200–202 (2005).
[CrossRef]

T. Kitagawa, K. Hattori, K. Shuto, M. Yasu, M. Kobayashi, and M. Horiguchi, “Amplification in erbium-doped silica-based planar lightwave circuits,” Electron. Lett. 28(19), 1818–1819 (1992).
[CrossRef]

S. Demiguel, N. Sahri, M. Hartlaub, F. Blache, H. Gariah, S. Vuiye, D. Carpentier, D. Barbier, and J. C. Campbell, “Low-cost photoreceiver integrating an EDWA and waveguide PIN photodiode for 40 Gbit/s applications,” Electron. Lett. 43(1), 51–52 (2007).
[CrossRef]

IEEE J. Quantum Electron.

K. Wörhoff, J. D. B. Bradley, F. Ay, D. Geskus, T. Blauwendraat, and M. Pollnau, “Reliable low-cost fabrication of low-loss Al2O3:Er3+ waveguides with 5.4-dB optical gain,” IEEE J. Quantum Electron. 45(5), 454–461 (2009).
[CrossRef]

IEEE J. Sel. Top. Quantum Electron.

F. Lelarge, B. Dagens, J. Renaudier, R. Brenot, A. Accard, F. Dijk, D. Make, O. L. Gouezigou, J.-G. Provost, F. Poingt, J. Landreau, O. Drisse, E. Derouin, B. Rousseau, F. Pommereau, and G.-H. Duan, “Recent advances on InAs/InP quantum dash based semiconductor lasers and optical amplifiers operating at 1.55 μm,” IEEE J. Sel. Top. Quantum Electron. 13(1), 111–124 (2007).
[CrossRef]

IEEE Photon. Technol. Lett.

K. Wörhoff, B. J. Offrein, P. V. Lambeck, G. L. Bona, A. Driessen, G. L. Bona, and A. Driessen, “Birefringence compensation applying double-core waveguiding structures,” IEEE Photon. Technol. Lett. 11(2), 206–208 (1999).
[CrossRef]

G. Nykolak, M. Haner, P. C. Becker, J. Shmulovich, and Y. H. Wong, “Systems evaluation of an Er3+-doped planar waveguide amplifier,” IEEE Photon. Technol. Lett. 5(10), 1185–1187 (1993).
[CrossRef]

J.-M. P. Delavaux, S. Granlund, O. Mizuhara, L. D. Tzeng, D. Barbier, M. Rattay, F. St. Andre, and A. Kevorkian, “Integrated optics erbium-ytterbium amplifier system in 10-Gb/s fiber transmission experiment,” IEEE Photon. Technol. Lett. 9(2), 247–249 (1997).
[CrossRef]

J. Lightwave Technol.

Nat. Photonics

Y. Kang, H.-D. Liu, M. Morse, M. J. Paniccia, M. Zadka, S. Litski, G. Sarid, A. Pauchard, Y.-H. Kuo, H.-W. Chen, W. S. Zaoui, J. E. Bowers, A. Beling, D. C. McIntosh, X. Zheng, and J. C. Campbell, “Monolithic germanium/silicon avalanche photodiodes with 340 GHz gain-bandwidth product,” Nat. Photonics 3(1), 59–63 (2008).
[CrossRef]

Opt. Eng.

M. Thual, D. Malarde, B. Abhervé-Guégen, P. Rochard, and P. Chanclou, “Truncated Gaussian beams through microlenses based on a graded-index section,” Opt. Eng. 46(1), 015402 (2007).
[CrossRef]

Other

Platform for tEst and Research on optical telecommunications SYSTems, http://www.persyst.fr .

M. Costa e Silva, H. Ramanitra, M. Gay, L. Bramerie, S. Lobo, M. Joindot, J. C. Simon, A. Shen, and G.-H. Duan, “Wavelength tunability assessment of a 170 Gbit/s transmitter using a quantum dash Fabry Perot mode-locked laser,” to be presented at the 35th European Conference on Optical Communication, Vienna, Austria, 20–24 September, 2009.

L. H. Spiekman, “Semiconductor optical amplifiers,” in Optical Fiber Telecommunications Volume IVA, I. P. Kaminow and T. Li, eds. (Academic Press, 2002), pp. 699–731.

J. Shmulovich, A. J. Bruce, G. Lenz, P. B. Hansen, T. N. Nielsen, D. J. Muehlner, G. A. Bogert, I. Brener, E. J. Laskowski, A. Paunescu, I. Ryazansky, D. C. Jacobson, and A. E. White, “Integrated planar waveguide amplifier with 15 dB net gain at 1550 nm,” in Optical Fiber Communication Conference and the International Conference on Integrated Optics and Optical Fiber Communication, OSA Technical Digest (Optical Society of America, 1999), paper PD42.

J. D. B. Bradley, L. Agazzi, D. Geskus, F. Ay, K. Wörhoff, and M. Pollnau, “Gain bandwidth of 80 nm and 2 dB/cm peak gain in Al2O3:Er3+ optical amplifiers on silicon,” submitted.

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Figures (5)

Fig. 1
Fig. 1

Internal net small signal gain at 1532 nm and 1550 nm (for co-propagating pumping and counter-propagating pumping with 170 Gbit/s signal) as a function of launched 1480 nm pump power .

Fig. 2
Fig. 2

Experimental setup for 170 Gbit/s transmission measurements.

Fig. 3
Fig. 3

Transmission eye diagrams for different polarization states of the 170 Gbit/s signal coupled to the EDWA. In each image two overlayed pulse trains are visible as a result of differential group delay between the fundamental TE and TM polarized modes supported by the EDWA. The input signal polarization state was adjusted such that in (a) both modes propagated with almost equal intensity, (b) one mode was more strongly excited, and (c) almost a single polarization mode was excited.

Fig. 4
Fig. 4

Transmission eye diagrams at 170 Gbit/s (a) without EDWA and (b) with EDWA and a launched signal power of 0.5 mW and counter-propagating pump power of 65 mW.

Fig. 5
Fig. 5

170 Gbit/s BER measurements for different launched signal powers Ps and a launched pump power of 65 mW as a function of the input power at the 42.5 Gbit/s receiver. A reference measurement with EDWA removed and identical optical power launched into the receiver is also shown.

Metrics