Abstract

We developed the HORN-6 special-purpose computer for holography. We designed and constructed the HORN-6 board to handle an object image composed of one million points and constructed a cluster system composed of 16 HORN-6 boards. Using this HORN-6 cluster system, we succeeded in creating a computer-generated hologram of a three-dimensional image composed of 1,000,000 points at a rate of 1 frame per second, and a computer-generated hologram of an image composed of 100,000 points at a rate of 10 frames per second, which is near video rate, when the size of a computer-generated hologram is 1,920 × 1,080. The calculation speed is approximately 4,600 times faster than that of a personal computer with an Intel 3.4-GHz Pentium 4 CPU.

© 2009 Optical Society of America

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  1. F. Djurabekova, and K. Nordlund, "Atomistic simulation of the interface structure of Si nanocrystals embedded in amorphous silica," Phys. Rev. B 77(11), 115325 (2008).
    [CrossRef] [PubMed]
  2. S. Tiwari, F. Rana, H. Hanafi, A. Hartstein, E. F. Crabbé, and K. Chan, "A silicon nanocrystals based memory," Appl. Phys. Lett. 68(10), 1377-1379 (1996).
    [CrossRef]
  3. S. Prezioso, S. M. Hossain, A. Anopchenko, L. Pavesi, M. Wang, G. Pucker, and P. Bellutti, "Superlinear photovoltaic effect in Si nanocrystals based metal-insulator-semiconductor devices," Appl. Phys. Lett. 94(6), 062108 (2009).
    [CrossRef]
  4. T. Z. Lu, M. Alexe, R. Scholz, V. Talalaev, R. J. Zhang, and M. Zacharias, "Si nanocrystal based memories: Effect of the nanocrystal density," J. Appl. Phys. 100(1), 014310 (2006).
    [CrossRef]
  5. P. Alpuim, S. A. Filonovich, C. M. Costa, P. F. Rocha, M. I. Vasilevskiy, S. Lanceros-Mendez, C. Frias, A. T. Marques, R. Soares, and C. Costa, "Fabrication of a strain sensor for bone implant failure detection based on piezoresistive doped nanocrystalline silicon," J. Non-Cryst. Solids 354(19-25), 2585-2589 (2008).
  6. I. Umezu, A. Sugimura, M. Inada, T. Makino, K. Matsumoto, and M. Takata, "Formation of nanoscale fine-structured silicon by pulsed laser ablation in hydrogen background gas," Phy. Rev. B 76, - (2007).
    [CrossRef]
  7. B. R. Tull, J. E. Carey, E. Mazur, J. P. McDonald, and S. M. Yalisove, "Silicon surface morphologies after femtosecond laser irradiation," MRS Bull. 31, 626-633 (2006).
    [CrossRef]
  8. S. V. Zabotnov, L. A.  Golovan’, I. A.  Ostapenko, Y. V.  Ryabchikov, A. V.  Chervyakov, V. Y.  Timoshenko, P. K.  Kashkarov, and V. V.  Yakovlev, "Femtosecond nanostructuring of silicon surfaces," JETP Lett. 83(2), 69-71 (2006).
    [CrossRef]
  9. B. N. Chichkov, C. Momma, S. Nolte, F. vonAlvensleben, and A. Tunnermann, "Femtosecond, picosecond and nanosecond laser ablation of solids," Appl. Phys. A - Material Scie Proc. 63, 109-115 (1996).
    [CrossRef]
  10. B. R. Tull, J. E. Carey, M. A. Sheehy, C. Friend, and E. Mazur, "Formation of silicon nanoparticles and web-like aggregates by femtosecond laser ablation in a background gas," Appl. Phys. A - Materials Scie. Proc. 83, 341-346 (2006).
    [CrossRef]
  11. M. Y. Shen, C. H. Crouch, J. E. Carey, and E. Mazur, "Femtosecond laser-induced formation of submicrometer spikes on silicon in water," Appl. Phys. Lett. 85(23), 5694-5696 (2004).
    [CrossRef]
  12. M. A. Sheehy, L. Winston, J. E. Carey, C. M. Friend, and E. Mazur, "Role of the background gas in the morphology and optical properties of laser-microstructured silicon," Chem. Mater. 17(14), 3582-3586 (2005).E
    [CrossRef]
  13. B. Tan, and K. Venkatakrishnan, "Synthesis of fibrous nanoparticle aggregates by femtosecond laser ablation in air," Opt. Express 17(2), 1064-1069 (2009).
    [CrossRef]
  14. S. T. Li, S. J. Silvers, and M. S. ElShall, "Surface oxidation and luminescence properties of weblike agglomeration of silicon nanocrystals produced by a laser vaporization-controlled condensation technique," J. Phys. Chem. B 101(10), 1794-1802 (1997).
    [CrossRef] [PubMed]
  15. S. Senadheera, B. Tan, and K. Venkatakrishnan, "Critical Time to Nucleation: Graphite and Silicon Nanoparticle Generation by Laser Ablation," J. Nanotech. 6(2009).
    [CrossRef]
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  17. H. Richter, Z. P. Wang, and L. Ley, "The one phonon Raman spectrum in microcrystalline silicon," Solid State Commun. 39(5), 625-629 (1981).
  18. J. Bonse, K. W. Brzezinka, and A. J. Meixner, "Modifying single-crystalline silicon by femtosecond laser pulses: an analysis by micro Raman spectroscopy, scanning laser microscopy and atomic force microscopy," Appl. Surf. Sci. 221(1-4), 215-230 (2004).
  19. R. Prabakaran, R. Kesavamoorthy, S. Amirthapandian, and A. Ramanand, "Raman scattering and photoluminescence studies on O+ implanted porous silicon," Mater. Lett. 58(29), 3745-3750 (2004).
  20. Kailer, K. G. Nickel, and Y. G. Gogotsi, "Raman microspectroscopy of nanocrystalline and amorphous phases in hardness indentations," J. Raman Spectroscopy 30(10), 939-937 (1999).
  21. Y. Kanemitsu, H. Uto, Y. Masumoto, T. Matsumoto, T. Futagi, and H. Mimura, "Microstructure and optical properties of free-standing porous silicon films: Size dependence of absorption spectra in Si nanometer-sized crystallites," Phys. Rev. B 48(4), 2827-2830 (1993).
  22. De Wolf, and H. E. Maes, "Mechanical stress measurements using micro-Raman spectroscopy," Microsyst. Technol. 5(1), 13-17 (1998).
  23. H. Campbell, and P. M. Fauchet, "The effects of microcrystal size and shape on the one phonon Raman spectra of crystalline semiconductors," Solid State Commun. 58(10), 739-741 (1986).
  24. M. Yang, D. M. Huang, P. H. Hao, F. L. Zhang, X. Y. Hou, and X. Wang, "Study of the Raman Peak Shift and the Linewidth of Light-Emitting Porous Silicon," J. Appl. Phys. 75(1), 651-653 (1994).

2009

S. Prezioso, S. M. Hossain, A. Anopchenko, L. Pavesi, M. Wang, G. Pucker, and P. Bellutti, "Superlinear photovoltaic effect in Si nanocrystals based metal-insulator-semiconductor devices," Appl. Phys. Lett. 94(6), 062108 (2009).
[CrossRef]

B. Tan, and K. Venkatakrishnan, "Synthesis of fibrous nanoparticle aggregates by femtosecond laser ablation in air," Opt. Express 17(2), 1064-1069 (2009).
[CrossRef]

S. Senadheera, B. Tan, and K. Venkatakrishnan, "Critical Time to Nucleation: Graphite and Silicon Nanoparticle Generation by Laser Ablation," J. Nanotech. 6(2009).
[CrossRef]

2008

F. Djurabekova, and K. Nordlund, "Atomistic simulation of the interface structure of Si nanocrystals embedded in amorphous silica," Phys. Rev. B 77(11), 115325 (2008).
[CrossRef] [PubMed]

P. Alpuim, S. A. Filonovich, C. M. Costa, P. F. Rocha, M. I. Vasilevskiy, S. Lanceros-Mendez, C. Frias, A. T. Marques, R. Soares, and C. Costa, "Fabrication of a strain sensor for bone implant failure detection based on piezoresistive doped nanocrystalline silicon," J. Non-Cryst. Solids 354(19-25), 2585-2589 (2008).

2007

I. Umezu, A. Sugimura, M. Inada, T. Makino, K. Matsumoto, and M. Takata, "Formation of nanoscale fine-structured silicon by pulsed laser ablation in hydrogen background gas," Phy. Rev. B 76, - (2007).
[CrossRef]

2006

B. R. Tull, J. E. Carey, E. Mazur, J. P. McDonald, and S. M. Yalisove, "Silicon surface morphologies after femtosecond laser irradiation," MRS Bull. 31, 626-633 (2006).
[CrossRef]

S. V. Zabotnov, L. A.  Golovan’, I. A.  Ostapenko, Y. V.  Ryabchikov, A. V.  Chervyakov, V. Y.  Timoshenko, P. K.  Kashkarov, and V. V.  Yakovlev, "Femtosecond nanostructuring of silicon surfaces," JETP Lett. 83(2), 69-71 (2006).
[CrossRef]

T. Z. Lu, M. Alexe, R. Scholz, V. Talalaev, R. J. Zhang, and M. Zacharias, "Si nanocrystal based memories: Effect of the nanocrystal density," J. Appl. Phys. 100(1), 014310 (2006).
[CrossRef]

B. R. Tull, J. E. Carey, M. A. Sheehy, C. Friend, and E. Mazur, "Formation of silicon nanoparticles and web-like aggregates by femtosecond laser ablation in a background gas," Appl. Phys. A - Materials Scie. Proc. 83, 341-346 (2006).
[CrossRef]

2005

M. A. Sheehy, L. Winston, J. E. Carey, C. M. Friend, and E. Mazur, "Role of the background gas in the morphology and optical properties of laser-microstructured silicon," Chem. Mater. 17(14), 3582-3586 (2005).E
[CrossRef]

2004

M. Y. Shen, C. H. Crouch, J. E. Carey, and E. Mazur, "Femtosecond laser-induced formation of submicrometer spikes on silicon in water," Appl. Phys. Lett. 85(23), 5694-5696 (2004).
[CrossRef]

J. Bonse, K. W. Brzezinka, and A. J. Meixner, "Modifying single-crystalline silicon by femtosecond laser pulses: an analysis by micro Raman spectroscopy, scanning laser microscopy and atomic force microscopy," Appl. Surf. Sci. 221(1-4), 215-230 (2004).

R. Prabakaran, R. Kesavamoorthy, S. Amirthapandian, and A. Ramanand, "Raman scattering and photoluminescence studies on O+ implanted porous silicon," Mater. Lett. 58(29), 3745-3750 (2004).

1999

Kailer, K. G. Nickel, and Y. G. Gogotsi, "Raman microspectroscopy of nanocrystalline and amorphous phases in hardness indentations," J. Raman Spectroscopy 30(10), 939-937 (1999).

1998

De Wolf, and H. E. Maes, "Mechanical stress measurements using micro-Raman spectroscopy," Microsyst. Technol. 5(1), 13-17 (1998).

1997

S. T. Li, S. J. Silvers, and M. S. ElShall, "Surface oxidation and luminescence properties of weblike agglomeration of silicon nanocrystals produced by a laser vaporization-controlled condensation technique," J. Phys. Chem. B 101(10), 1794-1802 (1997).
[CrossRef] [PubMed]

1996

S. Tiwari, F. Rana, H. Hanafi, A. Hartstein, E. F. Crabbé, and K. Chan, "A silicon nanocrystals based memory," Appl. Phys. Lett. 68(10), 1377-1379 (1996).
[CrossRef]

B. N. Chichkov, C. Momma, S. Nolte, F. vonAlvensleben, and A. Tunnermann, "Femtosecond, picosecond and nanosecond laser ablation of solids," Appl. Phys. A - Material Scie Proc. 63, 109-115 (1996).
[CrossRef]

1994

M. Yang, D. M. Huang, P. H. Hao, F. L. Zhang, X. Y. Hou, and X. Wang, "Study of the Raman Peak Shift and the Linewidth of Light-Emitting Porous Silicon," J. Appl. Phys. 75(1), 651-653 (1994).

1993

Y. Kanemitsu, H. Uto, Y. Masumoto, T. Matsumoto, T. Futagi, and H. Mimura, "Microstructure and optical properties of free-standing porous silicon films: Size dependence of absorption spectra in Si nanometer-sized crystallites," Phys. Rev. B 48(4), 2827-2830 (1993).

1986

H. Campbell, and P. M. Fauchet, "The effects of microcrystal size and shape on the one phonon Raman spectra of crystalline semiconductors," Solid State Commun. 58(10), 739-741 (1986).

1981

H. Richter, Z. P. Wang, and L. Ley, "The one phonon Raman spectrum in microcrystalline silicon," Solid State Commun. 39(5), 625-629 (1981).

Alexe, M.

T. Z. Lu, M. Alexe, R. Scholz, V. Talalaev, R. J. Zhang, and M. Zacharias, "Si nanocrystal based memories: Effect of the nanocrystal density," J. Appl. Phys. 100(1), 014310 (2006).
[CrossRef]

Alpuim, P.

P. Alpuim, S. A. Filonovich, C. M. Costa, P. F. Rocha, M. I. Vasilevskiy, S. Lanceros-Mendez, C. Frias, A. T. Marques, R. Soares, and C. Costa, "Fabrication of a strain sensor for bone implant failure detection based on piezoresistive doped nanocrystalline silicon," J. Non-Cryst. Solids 354(19-25), 2585-2589 (2008).

Amirthapandian, S.

R. Prabakaran, R. Kesavamoorthy, S. Amirthapandian, and A. Ramanand, "Raman scattering and photoluminescence studies on O+ implanted porous silicon," Mater. Lett. 58(29), 3745-3750 (2004).

Anopchenko, A.

S. Prezioso, S. M. Hossain, A. Anopchenko, L. Pavesi, M. Wang, G. Pucker, and P. Bellutti, "Superlinear photovoltaic effect in Si nanocrystals based metal-insulator-semiconductor devices," Appl. Phys. Lett. 94(6), 062108 (2009).
[CrossRef]

Bellutti, P.

S. Prezioso, S. M. Hossain, A. Anopchenko, L. Pavesi, M. Wang, G. Pucker, and P. Bellutti, "Superlinear photovoltaic effect in Si nanocrystals based metal-insulator-semiconductor devices," Appl. Phys. Lett. 94(6), 062108 (2009).
[CrossRef]

Bonse, J.

J. Bonse, K. W. Brzezinka, and A. J. Meixner, "Modifying single-crystalline silicon by femtosecond laser pulses: an analysis by micro Raman spectroscopy, scanning laser microscopy and atomic force microscopy," Appl. Surf. Sci. 221(1-4), 215-230 (2004).

Brzezinka, K. W.

J. Bonse, K. W. Brzezinka, and A. J. Meixner, "Modifying single-crystalline silicon by femtosecond laser pulses: an analysis by micro Raman spectroscopy, scanning laser microscopy and atomic force microscopy," Appl. Surf. Sci. 221(1-4), 215-230 (2004).

Campbell, H.

H. Campbell, and P. M. Fauchet, "The effects of microcrystal size and shape on the one phonon Raman spectra of crystalline semiconductors," Solid State Commun. 58(10), 739-741 (1986).

Carey, J. E.

B. R. Tull, J. E. Carey, E. Mazur, J. P. McDonald, and S. M. Yalisove, "Silicon surface morphologies after femtosecond laser irradiation," MRS Bull. 31, 626-633 (2006).
[CrossRef]

B. R. Tull, J. E. Carey, M. A. Sheehy, C. Friend, and E. Mazur, "Formation of silicon nanoparticles and web-like aggregates by femtosecond laser ablation in a background gas," Appl. Phys. A - Materials Scie. Proc. 83, 341-346 (2006).
[CrossRef]

M. A. Sheehy, L. Winston, J. E. Carey, C. M. Friend, and E. Mazur, "Role of the background gas in the morphology and optical properties of laser-microstructured silicon," Chem. Mater. 17(14), 3582-3586 (2005).E
[CrossRef]

M. Y. Shen, C. H. Crouch, J. E. Carey, and E. Mazur, "Femtosecond laser-induced formation of submicrometer spikes on silicon in water," Appl. Phys. Lett. 85(23), 5694-5696 (2004).
[CrossRef]

Chan, K.

S. Tiwari, F. Rana, H. Hanafi, A. Hartstein, E. F. Crabbé, and K. Chan, "A silicon nanocrystals based memory," Appl. Phys. Lett. 68(10), 1377-1379 (1996).
[CrossRef]

Chervyakov, A. V.

S. V. Zabotnov, L. A.  Golovan’, I. A.  Ostapenko, Y. V.  Ryabchikov, A. V.  Chervyakov, V. Y.  Timoshenko, P. K.  Kashkarov, and V. V.  Yakovlev, "Femtosecond nanostructuring of silicon surfaces," JETP Lett. 83(2), 69-71 (2006).
[CrossRef]

Chichkov, B. N.

B. N. Chichkov, C. Momma, S. Nolte, F. vonAlvensleben, and A. Tunnermann, "Femtosecond, picosecond and nanosecond laser ablation of solids," Appl. Phys. A - Material Scie Proc. 63, 109-115 (1996).
[CrossRef]

Costa, C.

P. Alpuim, S. A. Filonovich, C. M. Costa, P. F. Rocha, M. I. Vasilevskiy, S. Lanceros-Mendez, C. Frias, A. T. Marques, R. Soares, and C. Costa, "Fabrication of a strain sensor for bone implant failure detection based on piezoresistive doped nanocrystalline silicon," J. Non-Cryst. Solids 354(19-25), 2585-2589 (2008).

Costa, C. M.

P. Alpuim, S. A. Filonovich, C. M. Costa, P. F. Rocha, M. I. Vasilevskiy, S. Lanceros-Mendez, C. Frias, A. T. Marques, R. Soares, and C. Costa, "Fabrication of a strain sensor for bone implant failure detection based on piezoresistive doped nanocrystalline silicon," J. Non-Cryst. Solids 354(19-25), 2585-2589 (2008).

Crabbé, E. F.

S. Tiwari, F. Rana, H. Hanafi, A. Hartstein, E. F. Crabbé, and K. Chan, "A silicon nanocrystals based memory," Appl. Phys. Lett. 68(10), 1377-1379 (1996).
[CrossRef]

Crouch, C. H.

M. Y. Shen, C. H. Crouch, J. E. Carey, and E. Mazur, "Femtosecond laser-induced formation of submicrometer spikes on silicon in water," Appl. Phys. Lett. 85(23), 5694-5696 (2004).
[CrossRef]

Djurabekova, F.

F. Djurabekova, and K. Nordlund, "Atomistic simulation of the interface structure of Si nanocrystals embedded in amorphous silica," Phys. Rev. B 77(11), 115325 (2008).
[CrossRef] [PubMed]

ElShall, M. S.

S. T. Li, S. J. Silvers, and M. S. ElShall, "Surface oxidation and luminescence properties of weblike agglomeration of silicon nanocrystals produced by a laser vaporization-controlled condensation technique," J. Phys. Chem. B 101(10), 1794-1802 (1997).
[CrossRef] [PubMed]

Fauchet, P. M.

H. Campbell, and P. M. Fauchet, "The effects of microcrystal size and shape on the one phonon Raman spectra of crystalline semiconductors," Solid State Commun. 58(10), 739-741 (1986).

Filonovich, S. A.

P. Alpuim, S. A. Filonovich, C. M. Costa, P. F. Rocha, M. I. Vasilevskiy, S. Lanceros-Mendez, C. Frias, A. T. Marques, R. Soares, and C. Costa, "Fabrication of a strain sensor for bone implant failure detection based on piezoresistive doped nanocrystalline silicon," J. Non-Cryst. Solids 354(19-25), 2585-2589 (2008).

Frias, C.

P. Alpuim, S. A. Filonovich, C. M. Costa, P. F. Rocha, M. I. Vasilevskiy, S. Lanceros-Mendez, C. Frias, A. T. Marques, R. Soares, and C. Costa, "Fabrication of a strain sensor for bone implant failure detection based on piezoresistive doped nanocrystalline silicon," J. Non-Cryst. Solids 354(19-25), 2585-2589 (2008).

Friend, C.

B. R. Tull, J. E. Carey, M. A. Sheehy, C. Friend, and E. Mazur, "Formation of silicon nanoparticles and web-like aggregates by femtosecond laser ablation in a background gas," Appl. Phys. A - Materials Scie. Proc. 83, 341-346 (2006).
[CrossRef]

Friend, C. M.

M. A. Sheehy, L. Winston, J. E. Carey, C. M. Friend, and E. Mazur, "Role of the background gas in the morphology and optical properties of laser-microstructured silicon," Chem. Mater. 17(14), 3582-3586 (2005).E
[CrossRef]

Futagi, T.

Y. Kanemitsu, H. Uto, Y. Masumoto, T. Matsumoto, T. Futagi, and H. Mimura, "Microstructure and optical properties of free-standing porous silicon films: Size dependence of absorption spectra in Si nanometer-sized crystallites," Phys. Rev. B 48(4), 2827-2830 (1993).

Golovan’, L. A.

S. V. Zabotnov, L. A.  Golovan’, I. A.  Ostapenko, Y. V.  Ryabchikov, A. V.  Chervyakov, V. Y.  Timoshenko, P. K.  Kashkarov, and V. V.  Yakovlev, "Femtosecond nanostructuring of silicon surfaces," JETP Lett. 83(2), 69-71 (2006).
[CrossRef]

Hanafi, H.

S. Tiwari, F. Rana, H. Hanafi, A. Hartstein, E. F. Crabbé, and K. Chan, "A silicon nanocrystals based memory," Appl. Phys. Lett. 68(10), 1377-1379 (1996).
[CrossRef]

Hao, P. H.

M. Yang, D. M. Huang, P. H. Hao, F. L. Zhang, X. Y. Hou, and X. Wang, "Study of the Raman Peak Shift and the Linewidth of Light-Emitting Porous Silicon," J. Appl. Phys. 75(1), 651-653 (1994).

Hartstein, A.

S. Tiwari, F. Rana, H. Hanafi, A. Hartstein, E. F. Crabbé, and K. Chan, "A silicon nanocrystals based memory," Appl. Phys. Lett. 68(10), 1377-1379 (1996).
[CrossRef]

Hossain, S. M.

S. Prezioso, S. M. Hossain, A. Anopchenko, L. Pavesi, M. Wang, G. Pucker, and P. Bellutti, "Superlinear photovoltaic effect in Si nanocrystals based metal-insulator-semiconductor devices," Appl. Phys. Lett. 94(6), 062108 (2009).
[CrossRef]

Hou, X. Y.

M. Yang, D. M. Huang, P. H. Hao, F. L. Zhang, X. Y. Hou, and X. Wang, "Study of the Raman Peak Shift and the Linewidth of Light-Emitting Porous Silicon," J. Appl. Phys. 75(1), 651-653 (1994).

Huang, D. M.

M. Yang, D. M. Huang, P. H. Hao, F. L. Zhang, X. Y. Hou, and X. Wang, "Study of the Raman Peak Shift and the Linewidth of Light-Emitting Porous Silicon," J. Appl. Phys. 75(1), 651-653 (1994).

Inada, M.

I. Umezu, A. Sugimura, M. Inada, T. Makino, K. Matsumoto, and M. Takata, "Formation of nanoscale fine-structured silicon by pulsed laser ablation in hydrogen background gas," Phy. Rev. B 76, - (2007).
[CrossRef]

Kailer,

Kailer, K. G. Nickel, and Y. G. Gogotsi, "Raman microspectroscopy of nanocrystalline and amorphous phases in hardness indentations," J. Raman Spectroscopy 30(10), 939-937 (1999).

Kanemitsu, Y.

Y. Kanemitsu, H. Uto, Y. Masumoto, T. Matsumoto, T. Futagi, and H. Mimura, "Microstructure and optical properties of free-standing porous silicon films: Size dependence of absorption spectra in Si nanometer-sized crystallites," Phys. Rev. B 48(4), 2827-2830 (1993).

Kashkarov, P. K.

S. V. Zabotnov, L. A.  Golovan’, I. A.  Ostapenko, Y. V.  Ryabchikov, A. V.  Chervyakov, V. Y.  Timoshenko, P. K.  Kashkarov, and V. V.  Yakovlev, "Femtosecond nanostructuring of silicon surfaces," JETP Lett. 83(2), 69-71 (2006).
[CrossRef]

Kesavamoorthy, R.

R. Prabakaran, R. Kesavamoorthy, S. Amirthapandian, and A. Ramanand, "Raman scattering and photoluminescence studies on O+ implanted porous silicon," Mater. Lett. 58(29), 3745-3750 (2004).

Lanceros-Mendez, S.

P. Alpuim, S. A. Filonovich, C. M. Costa, P. F. Rocha, M. I. Vasilevskiy, S. Lanceros-Mendez, C. Frias, A. T. Marques, R. Soares, and C. Costa, "Fabrication of a strain sensor for bone implant failure detection based on piezoresistive doped nanocrystalline silicon," J. Non-Cryst. Solids 354(19-25), 2585-2589 (2008).

Ley, L.

H. Richter, Z. P. Wang, and L. Ley, "The one phonon Raman spectrum in microcrystalline silicon," Solid State Commun. 39(5), 625-629 (1981).

Li, S. T.

S. T. Li, S. J. Silvers, and M. S. ElShall, "Surface oxidation and luminescence properties of weblike agglomeration of silicon nanocrystals produced by a laser vaporization-controlled condensation technique," J. Phys. Chem. B 101(10), 1794-1802 (1997).
[CrossRef] [PubMed]

Lu, T. Z.

T. Z. Lu, M. Alexe, R. Scholz, V. Talalaev, R. J. Zhang, and M. Zacharias, "Si nanocrystal based memories: Effect of the nanocrystal density," J. Appl. Phys. 100(1), 014310 (2006).
[CrossRef]

Maes, H. E.

De Wolf, and H. E. Maes, "Mechanical stress measurements using micro-Raman spectroscopy," Microsyst. Technol. 5(1), 13-17 (1998).

Makino, T.

I. Umezu, A. Sugimura, M. Inada, T. Makino, K. Matsumoto, and M. Takata, "Formation of nanoscale fine-structured silicon by pulsed laser ablation in hydrogen background gas," Phy. Rev. B 76, - (2007).
[CrossRef]

Marques, A. T.

P. Alpuim, S. A. Filonovich, C. M. Costa, P. F. Rocha, M. I. Vasilevskiy, S. Lanceros-Mendez, C. Frias, A. T. Marques, R. Soares, and C. Costa, "Fabrication of a strain sensor for bone implant failure detection based on piezoresistive doped nanocrystalline silicon," J. Non-Cryst. Solids 354(19-25), 2585-2589 (2008).

Masumoto, Y.

Y. Kanemitsu, H. Uto, Y. Masumoto, T. Matsumoto, T. Futagi, and H. Mimura, "Microstructure and optical properties of free-standing porous silicon films: Size dependence of absorption spectra in Si nanometer-sized crystallites," Phys. Rev. B 48(4), 2827-2830 (1993).

Matsumoto, K.

I. Umezu, A. Sugimura, M. Inada, T. Makino, K. Matsumoto, and M. Takata, "Formation of nanoscale fine-structured silicon by pulsed laser ablation in hydrogen background gas," Phy. Rev. B 76, - (2007).
[CrossRef]

Matsumoto, T.

Y. Kanemitsu, H. Uto, Y. Masumoto, T. Matsumoto, T. Futagi, and H. Mimura, "Microstructure and optical properties of free-standing porous silicon films: Size dependence of absorption spectra in Si nanometer-sized crystallites," Phys. Rev. B 48(4), 2827-2830 (1993).

Mazur, E.

B. R. Tull, J. E. Carey, M. A. Sheehy, C. Friend, and E. Mazur, "Formation of silicon nanoparticles and web-like aggregates by femtosecond laser ablation in a background gas," Appl. Phys. A - Materials Scie. Proc. 83, 341-346 (2006).
[CrossRef]

B. R. Tull, J. E. Carey, E. Mazur, J. P. McDonald, and S. M. Yalisove, "Silicon surface morphologies after femtosecond laser irradiation," MRS Bull. 31, 626-633 (2006).
[CrossRef]

M. A. Sheehy, L. Winston, J. E. Carey, C. M. Friend, and E. Mazur, "Role of the background gas in the morphology and optical properties of laser-microstructured silicon," Chem. Mater. 17(14), 3582-3586 (2005).E
[CrossRef]

M. Y. Shen, C. H. Crouch, J. E. Carey, and E. Mazur, "Femtosecond laser-induced formation of submicrometer spikes on silicon in water," Appl. Phys. Lett. 85(23), 5694-5696 (2004).
[CrossRef]

McDonald, J. P.

B. R. Tull, J. E. Carey, E. Mazur, J. P. McDonald, and S. M. Yalisove, "Silicon surface morphologies after femtosecond laser irradiation," MRS Bull. 31, 626-633 (2006).
[CrossRef]

Meixner, A. J.

J. Bonse, K. W. Brzezinka, and A. J. Meixner, "Modifying single-crystalline silicon by femtosecond laser pulses: an analysis by micro Raman spectroscopy, scanning laser microscopy and atomic force microscopy," Appl. Surf. Sci. 221(1-4), 215-230 (2004).

Mimura, H.

Y. Kanemitsu, H. Uto, Y. Masumoto, T. Matsumoto, T. Futagi, and H. Mimura, "Microstructure and optical properties of free-standing porous silicon films: Size dependence of absorption spectra in Si nanometer-sized crystallites," Phys. Rev. B 48(4), 2827-2830 (1993).

Momma, C.

B. N. Chichkov, C. Momma, S. Nolte, F. vonAlvensleben, and A. Tunnermann, "Femtosecond, picosecond and nanosecond laser ablation of solids," Appl. Phys. A - Material Scie Proc. 63, 109-115 (1996).
[CrossRef]

Nolte, S.

B. N. Chichkov, C. Momma, S. Nolte, F. vonAlvensleben, and A. Tunnermann, "Femtosecond, picosecond and nanosecond laser ablation of solids," Appl. Phys. A - Material Scie Proc. 63, 109-115 (1996).
[CrossRef]

Nordlund, K.

F. Djurabekova, and K. Nordlund, "Atomistic simulation of the interface structure of Si nanocrystals embedded in amorphous silica," Phys. Rev. B 77(11), 115325 (2008).
[CrossRef] [PubMed]

Ostapenko, I. A.

S. V. Zabotnov, L. A.  Golovan’, I. A.  Ostapenko, Y. V.  Ryabchikov, A. V.  Chervyakov, V. Y.  Timoshenko, P. K.  Kashkarov, and V. V.  Yakovlev, "Femtosecond nanostructuring of silicon surfaces," JETP Lett. 83(2), 69-71 (2006).
[CrossRef]

Pavesi, L.

S. Prezioso, S. M. Hossain, A. Anopchenko, L. Pavesi, M. Wang, G. Pucker, and P. Bellutti, "Superlinear photovoltaic effect in Si nanocrystals based metal-insulator-semiconductor devices," Appl. Phys. Lett. 94(6), 062108 (2009).
[CrossRef]

Prabakaran, R.

R. Prabakaran, R. Kesavamoorthy, S. Amirthapandian, and A. Ramanand, "Raman scattering and photoluminescence studies on O+ implanted porous silicon," Mater. Lett. 58(29), 3745-3750 (2004).

Prezioso, S.

S. Prezioso, S. M. Hossain, A. Anopchenko, L. Pavesi, M. Wang, G. Pucker, and P. Bellutti, "Superlinear photovoltaic effect in Si nanocrystals based metal-insulator-semiconductor devices," Appl. Phys. Lett. 94(6), 062108 (2009).
[CrossRef]

Pucker, G.

S. Prezioso, S. M. Hossain, A. Anopchenko, L. Pavesi, M. Wang, G. Pucker, and P. Bellutti, "Superlinear photovoltaic effect in Si nanocrystals based metal-insulator-semiconductor devices," Appl. Phys. Lett. 94(6), 062108 (2009).
[CrossRef]

Ramanand, A.

R. Prabakaran, R. Kesavamoorthy, S. Amirthapandian, and A. Ramanand, "Raman scattering and photoluminescence studies on O+ implanted porous silicon," Mater. Lett. 58(29), 3745-3750 (2004).

Rana, F.

S. Tiwari, F. Rana, H. Hanafi, A. Hartstein, E. F. Crabbé, and K. Chan, "A silicon nanocrystals based memory," Appl. Phys. Lett. 68(10), 1377-1379 (1996).
[CrossRef]

Richter, H.

H. Richter, Z. P. Wang, and L. Ley, "The one phonon Raman spectrum in microcrystalline silicon," Solid State Commun. 39(5), 625-629 (1981).

Rocha, P. F.

P. Alpuim, S. A. Filonovich, C. M. Costa, P. F. Rocha, M. I. Vasilevskiy, S. Lanceros-Mendez, C. Frias, A. T. Marques, R. Soares, and C. Costa, "Fabrication of a strain sensor for bone implant failure detection based on piezoresistive doped nanocrystalline silicon," J. Non-Cryst. Solids 354(19-25), 2585-2589 (2008).

Ryabchikov, Y. V.

S. V. Zabotnov, L. A.  Golovan’, I. A.  Ostapenko, Y. V.  Ryabchikov, A. V.  Chervyakov, V. Y.  Timoshenko, P. K.  Kashkarov, and V. V.  Yakovlev, "Femtosecond nanostructuring of silicon surfaces," JETP Lett. 83(2), 69-71 (2006).
[CrossRef]

Scholz, R.

T. Z. Lu, M. Alexe, R. Scholz, V. Talalaev, R. J. Zhang, and M. Zacharias, "Si nanocrystal based memories: Effect of the nanocrystal density," J. Appl. Phys. 100(1), 014310 (2006).
[CrossRef]

Senadheera, S.

S. Senadheera, B. Tan, and K. Venkatakrishnan, "Critical Time to Nucleation: Graphite and Silicon Nanoparticle Generation by Laser Ablation," J. Nanotech. 6(2009).
[CrossRef]

Sheehy, M. A.

B. R. Tull, J. E. Carey, M. A. Sheehy, C. Friend, and E. Mazur, "Formation of silicon nanoparticles and web-like aggregates by femtosecond laser ablation in a background gas," Appl. Phys. A - Materials Scie. Proc. 83, 341-346 (2006).
[CrossRef]

M. A. Sheehy, L. Winston, J. E. Carey, C. M. Friend, and E. Mazur, "Role of the background gas in the morphology and optical properties of laser-microstructured silicon," Chem. Mater. 17(14), 3582-3586 (2005).E
[CrossRef]

Shen, M. Y.

M. Y. Shen, C. H. Crouch, J. E. Carey, and E. Mazur, "Femtosecond laser-induced formation of submicrometer spikes on silicon in water," Appl. Phys. Lett. 85(23), 5694-5696 (2004).
[CrossRef]

Silvers, S. J.

S. T. Li, S. J. Silvers, and M. S. ElShall, "Surface oxidation and luminescence properties of weblike agglomeration of silicon nanocrystals produced by a laser vaporization-controlled condensation technique," J. Phys. Chem. B 101(10), 1794-1802 (1997).
[CrossRef] [PubMed]

Soares, R.

P. Alpuim, S. A. Filonovich, C. M. Costa, P. F. Rocha, M. I. Vasilevskiy, S. Lanceros-Mendez, C. Frias, A. T. Marques, R. Soares, and C. Costa, "Fabrication of a strain sensor for bone implant failure detection based on piezoresistive doped nanocrystalline silicon," J. Non-Cryst. Solids 354(19-25), 2585-2589 (2008).

Sugimura, A.

I. Umezu, A. Sugimura, M. Inada, T. Makino, K. Matsumoto, and M. Takata, "Formation of nanoscale fine-structured silicon by pulsed laser ablation in hydrogen background gas," Phy. Rev. B 76, - (2007).
[CrossRef]

Takata, M.

I. Umezu, A. Sugimura, M. Inada, T. Makino, K. Matsumoto, and M. Takata, "Formation of nanoscale fine-structured silicon by pulsed laser ablation in hydrogen background gas," Phy. Rev. B 76, - (2007).
[CrossRef]

Talalaev, V.

T. Z. Lu, M. Alexe, R. Scholz, V. Talalaev, R. J. Zhang, and M. Zacharias, "Si nanocrystal based memories: Effect of the nanocrystal density," J. Appl. Phys. 100(1), 014310 (2006).
[CrossRef]

Tan, B.

B. Tan, and K. Venkatakrishnan, "Synthesis of fibrous nanoparticle aggregates by femtosecond laser ablation in air," Opt. Express 17(2), 1064-1069 (2009).
[CrossRef]

S. Senadheera, B. Tan, and K. Venkatakrishnan, "Critical Time to Nucleation: Graphite and Silicon Nanoparticle Generation by Laser Ablation," J. Nanotech. 6(2009).
[CrossRef]

Timoshenko, V. Y.

S. V. Zabotnov, L. A.  Golovan’, I. A.  Ostapenko, Y. V.  Ryabchikov, A. V.  Chervyakov, V. Y.  Timoshenko, P. K.  Kashkarov, and V. V.  Yakovlev, "Femtosecond nanostructuring of silicon surfaces," JETP Lett. 83(2), 69-71 (2006).
[CrossRef]

Tiwari, S.

S. Tiwari, F. Rana, H. Hanafi, A. Hartstein, E. F. Crabbé, and K. Chan, "A silicon nanocrystals based memory," Appl. Phys. Lett. 68(10), 1377-1379 (1996).
[CrossRef]

Tull, B. R.

B. R. Tull, J. E. Carey, E. Mazur, J. P. McDonald, and S. M. Yalisove, "Silicon surface morphologies after femtosecond laser irradiation," MRS Bull. 31, 626-633 (2006).
[CrossRef]

B. R. Tull, J. E. Carey, M. A. Sheehy, C. Friend, and E. Mazur, "Formation of silicon nanoparticles and web-like aggregates by femtosecond laser ablation in a background gas," Appl. Phys. A - Materials Scie. Proc. 83, 341-346 (2006).
[CrossRef]

Tunnermann, A.

B. N. Chichkov, C. Momma, S. Nolte, F. vonAlvensleben, and A. Tunnermann, "Femtosecond, picosecond and nanosecond laser ablation of solids," Appl. Phys. A - Material Scie Proc. 63, 109-115 (1996).
[CrossRef]

Umezu, I.

I. Umezu, A. Sugimura, M. Inada, T. Makino, K. Matsumoto, and M. Takata, "Formation of nanoscale fine-structured silicon by pulsed laser ablation in hydrogen background gas," Phy. Rev. B 76, - (2007).
[CrossRef]

Uto, H.

Y. Kanemitsu, H. Uto, Y. Masumoto, T. Matsumoto, T. Futagi, and H. Mimura, "Microstructure and optical properties of free-standing porous silicon films: Size dependence of absorption spectra in Si nanometer-sized crystallites," Phys. Rev. B 48(4), 2827-2830 (1993).

Vasilevskiy, M. I.

P. Alpuim, S. A. Filonovich, C. M. Costa, P. F. Rocha, M. I. Vasilevskiy, S. Lanceros-Mendez, C. Frias, A. T. Marques, R. Soares, and C. Costa, "Fabrication of a strain sensor for bone implant failure detection based on piezoresistive doped nanocrystalline silicon," J. Non-Cryst. Solids 354(19-25), 2585-2589 (2008).

Venkatakrishnan, K.

B. Tan, and K. Venkatakrishnan, "Synthesis of fibrous nanoparticle aggregates by femtosecond laser ablation in air," Opt. Express 17(2), 1064-1069 (2009).
[CrossRef]

S. Senadheera, B. Tan, and K. Venkatakrishnan, "Critical Time to Nucleation: Graphite and Silicon Nanoparticle Generation by Laser Ablation," J. Nanotech. 6(2009).
[CrossRef]

vonAlvensleben, F.

B. N. Chichkov, C. Momma, S. Nolte, F. vonAlvensleben, and A. Tunnermann, "Femtosecond, picosecond and nanosecond laser ablation of solids," Appl. Phys. A - Material Scie Proc. 63, 109-115 (1996).
[CrossRef]

Wang, M.

S. Prezioso, S. M. Hossain, A. Anopchenko, L. Pavesi, M. Wang, G. Pucker, and P. Bellutti, "Superlinear photovoltaic effect in Si nanocrystals based metal-insulator-semiconductor devices," Appl. Phys. Lett. 94(6), 062108 (2009).
[CrossRef]

Wang, X.

M. Yang, D. M. Huang, P. H. Hao, F. L. Zhang, X. Y. Hou, and X. Wang, "Study of the Raman Peak Shift and the Linewidth of Light-Emitting Porous Silicon," J. Appl. Phys. 75(1), 651-653 (1994).

Wang, Z. P.

H. Richter, Z. P. Wang, and L. Ley, "The one phonon Raman spectrum in microcrystalline silicon," Solid State Commun. 39(5), 625-629 (1981).

Winston, L.

M. A. Sheehy, L. Winston, J. E. Carey, C. M. Friend, and E. Mazur, "Role of the background gas in the morphology and optical properties of laser-microstructured silicon," Chem. Mater. 17(14), 3582-3586 (2005).E
[CrossRef]

Wolf, De

De Wolf, and H. E. Maes, "Mechanical stress measurements using micro-Raman spectroscopy," Microsyst. Technol. 5(1), 13-17 (1998).

Yakovlev, V. V.

S. V. Zabotnov, L. A.  Golovan’, I. A.  Ostapenko, Y. V.  Ryabchikov, A. V.  Chervyakov, V. Y.  Timoshenko, P. K.  Kashkarov, and V. V.  Yakovlev, "Femtosecond nanostructuring of silicon surfaces," JETP Lett. 83(2), 69-71 (2006).
[CrossRef]

Yalisove, S. M.

B. R. Tull, J. E. Carey, E. Mazur, J. P. McDonald, and S. M. Yalisove, "Silicon surface morphologies after femtosecond laser irradiation," MRS Bull. 31, 626-633 (2006).
[CrossRef]

Yang, M.

M. Yang, D. M. Huang, P. H. Hao, F. L. Zhang, X. Y. Hou, and X. Wang, "Study of the Raman Peak Shift and the Linewidth of Light-Emitting Porous Silicon," J. Appl. Phys. 75(1), 651-653 (1994).

Zabotnov, S. V.

S. V. Zabotnov, L. A.  Golovan’, I. A.  Ostapenko, Y. V.  Ryabchikov, A. V.  Chervyakov, V. Y.  Timoshenko, P. K.  Kashkarov, and V. V.  Yakovlev, "Femtosecond nanostructuring of silicon surfaces," JETP Lett. 83(2), 69-71 (2006).
[CrossRef]

Zacharias, M.

T. Z. Lu, M. Alexe, R. Scholz, V. Talalaev, R. J. Zhang, and M. Zacharias, "Si nanocrystal based memories: Effect of the nanocrystal density," J. Appl. Phys. 100(1), 014310 (2006).
[CrossRef]

Zhang, F. L.

M. Yang, D. M. Huang, P. H. Hao, F. L. Zhang, X. Y. Hou, and X. Wang, "Study of the Raman Peak Shift and the Linewidth of Light-Emitting Porous Silicon," J. Appl. Phys. 75(1), 651-653 (1994).

Zhang, R. J.

T. Z. Lu, M. Alexe, R. Scholz, V. Talalaev, R. J. Zhang, and M. Zacharias, "Si nanocrystal based memories: Effect of the nanocrystal density," J. Appl. Phys. 100(1), 014310 (2006).
[CrossRef]

Appl. Phys. A - Materials Scie. Proc.

B. N. Chichkov, C. Momma, S. Nolte, F. vonAlvensleben, and A. Tunnermann, "Femtosecond, picosecond and nanosecond laser ablation of solids," Appl. Phys. A - Material Scie Proc. 63, 109-115 (1996).
[CrossRef]

B. R. Tull, J. E. Carey, M. A. Sheehy, C. Friend, and E. Mazur, "Formation of silicon nanoparticles and web-like aggregates by femtosecond laser ablation in a background gas," Appl. Phys. A - Materials Scie. Proc. 83, 341-346 (2006).
[CrossRef]

Appl. Phys. Lett.

M. Y. Shen, C. H. Crouch, J. E. Carey, and E. Mazur, "Femtosecond laser-induced formation of submicrometer spikes on silicon in water," Appl. Phys. Lett. 85(23), 5694-5696 (2004).
[CrossRef]

S. Tiwari, F. Rana, H. Hanafi, A. Hartstein, E. F. Crabbé, and K. Chan, "A silicon nanocrystals based memory," Appl. Phys. Lett. 68(10), 1377-1379 (1996).
[CrossRef]

S. Prezioso, S. M. Hossain, A. Anopchenko, L. Pavesi, M. Wang, G. Pucker, and P. Bellutti, "Superlinear photovoltaic effect in Si nanocrystals based metal-insulator-semiconductor devices," Appl. Phys. Lett. 94(6), 062108 (2009).
[CrossRef]

Appl. Surf. Sci.

J. Bonse, K. W. Brzezinka, and A. J. Meixner, "Modifying single-crystalline silicon by femtosecond laser pulses: an analysis by micro Raman spectroscopy, scanning laser microscopy and atomic force microscopy," Appl. Surf. Sci. 221(1-4), 215-230 (2004).

Chem. Mater.

M. A. Sheehy, L. Winston, J. E. Carey, C. M. Friend, and E. Mazur, "Role of the background gas in the morphology and optical properties of laser-microstructured silicon," Chem. Mater. 17(14), 3582-3586 (2005).E
[CrossRef]

J. Appl. Phys.

T. Z. Lu, M. Alexe, R. Scholz, V. Talalaev, R. J. Zhang, and M. Zacharias, "Si nanocrystal based memories: Effect of the nanocrystal density," J. Appl. Phys. 100(1), 014310 (2006).
[CrossRef]

M. Yang, D. M. Huang, P. H. Hao, F. L. Zhang, X. Y. Hou, and X. Wang, "Study of the Raman Peak Shift and the Linewidth of Light-Emitting Porous Silicon," J. Appl. Phys. 75(1), 651-653 (1994).

J. Non-Cryst. Solids

P. Alpuim, S. A. Filonovich, C. M. Costa, P. F. Rocha, M. I. Vasilevskiy, S. Lanceros-Mendez, C. Frias, A. T. Marques, R. Soares, and C. Costa, "Fabrication of a strain sensor for bone implant failure detection based on piezoresistive doped nanocrystalline silicon," J. Non-Cryst. Solids 354(19-25), 2585-2589 (2008).

J. Phys. Chem. B

S. T. Li, S. J. Silvers, and M. S. ElShall, "Surface oxidation and luminescence properties of weblike agglomeration of silicon nanocrystals produced by a laser vaporization-controlled condensation technique," J. Phys. Chem. B 101(10), 1794-1802 (1997).
[CrossRef] [PubMed]

JETP Lett.

S. V. Zabotnov, L. A.  Golovan’, I. A.  Ostapenko, Y. V.  Ryabchikov, A. V.  Chervyakov, V. Y.  Timoshenko, P. K.  Kashkarov, and V. V.  Yakovlev, "Femtosecond nanostructuring of silicon surfaces," JETP Lett. 83(2), 69-71 (2006).
[CrossRef]

Journal of Nanotechnology

S. Senadheera, B. Tan, and K. Venkatakrishnan, "Critical Time to Nucleation: Graphite and Silicon Nanoparticle Generation by Laser Ablation," J. Nanotech. 6(2009).
[CrossRef]

Journal of Raman Spectroscopy

Kailer, K. G. Nickel, and Y. G. Gogotsi, "Raman microspectroscopy of nanocrystalline and amorphous phases in hardness indentations," J. Raman Spectroscopy 30(10), 939-937 (1999).

Mater. Lett.

R. Prabakaran, R. Kesavamoorthy, S. Amirthapandian, and A. Ramanand, "Raman scattering and photoluminescence studies on O+ implanted porous silicon," Mater. Lett. 58(29), 3745-3750 (2004).

Microsyst. Technol.

De Wolf, and H. E. Maes, "Mechanical stress measurements using micro-Raman spectroscopy," Microsyst. Technol. 5(1), 13-17 (1998).

MRS Bull.

B. R. Tull, J. E. Carey, E. Mazur, J. P. McDonald, and S. M. Yalisove, "Silicon surface morphologies after femtosecond laser irradiation," MRS Bull. 31, 626-633 (2006).
[CrossRef]

Opt. Express

Phys. Rev. B

I. Umezu, A. Sugimura, M. Inada, T. Makino, K. Matsumoto, and M. Takata, "Formation of nanoscale fine-structured silicon by pulsed laser ablation in hydrogen background gas," Phy. Rev. B 76, - (2007).
[CrossRef]

F. Djurabekova, and K. Nordlund, "Atomistic simulation of the interface structure of Si nanocrystals embedded in amorphous silica," Phys. Rev. B 77(11), 115325 (2008).
[CrossRef] [PubMed]

Y. Kanemitsu, H. Uto, Y. Masumoto, T. Matsumoto, T. Futagi, and H. Mimura, "Microstructure and optical properties of free-standing porous silicon films: Size dependence of absorption spectra in Si nanometer-sized crystallites," Phys. Rev. B 48(4), 2827-2830 (1993).

Solid State Commun.

H. Campbell, and P. M. Fauchet, "The effects of microcrystal size and shape on the one phonon Raman spectra of crystalline semiconductors," Solid State Commun. 58(10), 739-741 (1986).

H. Richter, Z. P. Wang, and L. Ley, "The one phonon Raman spectrum in microcrystalline silicon," Solid State Commun. 39(5), 625-629 (1981).

Other

K. Arora, M. Rajalakshmi, and T. R. Ravindran, "Phonon Confinement in Nanostructured Materials," Encyclopedia of Nanoscience and Nanotechnology 8, 499-512 (2004).
[CrossRef]

Supplementary Material (3)

» Media 1: MPG (1068 KB)     
» Media 2: MPG (1643 KB)     
» Media 3: MPG (1693 KB)     

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Figures (13)

Fig. 1.
Fig. 1.

Optical system for electroholography.

Fig. 2.
Fig. 2.

3-D image reconstructed on the output lens.

Fig. 3.
Fig. 3.

HORN-6 board.

Fig. 4.
Fig. 4.

Block diagram of HORN-6.

Fig. 5.
Fig. 5.

Overview of the HORN-6 cluster system.

Fig. 6.
Fig. 6.

Frame rate using the HORN-6 cluster system.

Fig. 7.
Fig. 7.

(a) Computer graphics image Dinosaur composed of 11,646 points.

(b)
(b)

Reconstructed movie (Media 1)

Fig. 8.
Fig. 8.

(a) Computer graphics image Chess board composed of 44,647 points.

(b)
(b)

Reconstructed movie (Media 2)

Fig. 9.
Fig. 9.

(a) Computer graphics image Merry-go-round composed of 95,949 points.

(b)
(b)

Reconstructed movie (Media 3)

Fig. 10.
Fig. 10.

Fountain composed of 978,416 points.

Tables (2)

Tables Icon

Table 1. Specifications of the personal computers used to construct the cluster system.

Tables Icon

Table 2. Computational performance of the HORN-6 cluster system.

Equations (6)

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I(xα,yα)=jNAjcos(2πλrαj),
rαj=(xαxj)2+(yαyj)2+zj2,
I(xα,yα)=jNcos(2πΘn,j),
Θn,j=Θn1,j+Δn1,j,Δn,j=Δn1,j+Γj,
Θ0,j=pzj2λ+p2λzj{(xαxj)2+(yαyj)2},
Δ0,j=p2λzj{2(xαxj)21},Γj=pzjλ,

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