Abstract

We have developed an InAs/InP quantum dot (QD) gain material using a double cap growth procedure and GaP sublayer to tune QDs into the L-band. By using it, a passive L-band mode-locked laser with pulse duration of 445 fs at the repetition rate of 46 GHz was demonstrated. The 3-dB linewidth of the RF spectrum is less than 100 KHz. The lasing threshold injection current is 24 mA with an external differential quantum efficiency of 22% and an average output power of 27 mW. The relationship between pulse duration and 3-dB spectral bandwidth as a function of injection current was investigated.

© 2009 OSA

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    [CrossRef]
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    [CrossRef]

2009

2008

Z. G. Lu, J. R. Liu, S. Raymond, P. J. Poole, P. J. Barrios, and D. Poitras, “312-fs pulse generation from a passive C-band InAs/InP quantum dot mode-locked laser,” Opt. Express 16(14), 10835–10840 (2008).
[CrossRef] [PubMed]

J. R. Liu, Z. G. Lu, S. Raymond, P. J. Poole, P. J. Barrios, and D. Poitras, “1.6-μm multi-wavelength emission of an InAs-InGaAsP quantum-dot laser,” IEEE Photon. Technol. Lett. 20(2), 81–83 (2008).
[CrossRef]

2007

J. R. Liu, Z. G. Lu, S. Raymond, P. J. Poole, P. J. Barrios, G. Pakulski, D. Poitras, G. Z. Xiao, and Z. Y. Zhang, “Uniform 90-channel multiwavelength InAs/InGaAsP quantum dot laser,” Electron. Lett. 43(8), 458–460 (2007).
[CrossRef]

M. J. R. Heck, E. A. J. M. Bente, B. Smalbrugge, Y. S. Oei, M. K. Smit, S. Anantathanasarn, and R. Nötzel, “Observation of Q-switching and mode-locking in two-section InAs/InP (100) quantum dot lasers around 1.55 mum,” Opt. Express 15(25), 16292–16301 (2007).
[CrossRef] [PubMed]

E. U. Rafailov, M. A. Cataluna, and W. Sibbett, “Mode-locked quantum-dot lasers,” Nat. Photonics 1(7), 395–401 (2007).
[CrossRef]

2006

C. Gosset, K. Merghem, A. Martinez, G. Moreau, P. Patriarche, G. Aubin, A. Ramdane, J. Landreau, and F. Lelarge, “Subpicosecond pulse genearation at 134 GHz using a quantum-dash-based Fabry-Perot laser emitting at 1.56 µm,” Appl. Phys. Lett. 88(24), 241105 (2006).
[CrossRef]

A. J. Zilkie, J. Meier, P. W. E. Smith, M. Mojahedi, J. S. Aitchison, P. J. Poole, C. N. Allen, P. J. Barrios, and D. Poitras, “Femtosecond gain and index dynamics in an InAs/InGaAsP quantum dot amplifier operating at 1.55 microm,” Opt. Express 14(23), 11453–11459 (2006).
[CrossRef] [PubMed]

2005

J. Renaudier, R. Brenot, B. Dagens, F. Lelarge, B. Rousseau, F. Poingt, O. Legouezigou, F. Pommereau, A. Accard, P. Gallion, and G. H. Duan, “45 GHz self-pulsation with narrow linewidth in quantum dot Fabry-Perot semiconductor lasers at 1.5 μm,” Electron. Lett. 41(18), 1007–1008 (2005).
[CrossRef]

2003

P. J. Poole, R. L. Williams, J. Lefebvre, and S. Moisa, “Using As/P exchange processes to modify InAs/InP quantum dots,” J. Cryst. Growth 257(1-2), 89–96 (2003).
[CrossRef]

2002

C. Nì, “Allen, P.J. Poole, P. Marshall, J. Fraser, S. Raymond and S. Fafard, “InAs self-assembled quantum dot lasers grown on (100) InP,” Appl. Phys. Lett. 80, 3629–3631 (2002).
[CrossRef]

2001

X. D. Huang, A. Stintz, H. Li, F. Lester, J. L. Cheng, and K. J. Malloy, “Passive mode-locking in 1.3 µm two-section InAs quantum dot lasers,” Appl. Phys. Lett. 78(19), 2825–2827 (2001).
[CrossRef]

1999

G. T. Liu, A. Stintz, H. Li, K. J. Malloy, and L. F. Lester, “Extremely low room-temperature threshold current density diode lasers using lnAs dots in In0.05Ga0.85As quantum well,” Electron. Lett. 35(14), 1163–1165 (1999).
[CrossRef]

1998

T. Sakamoto, J. Kani, M. Jinno, S. Aisawa, M. Fukui, M. Yamada, and K. Oguchi, “Wide wavelength band (1535-1560 nm and 1574-1600 nm), 28x10Gbit/s WDM transmission over 320km dispersion-shifted fibre,” Electron. Lett. 34(4), 292–294 (1998).
[CrossRef]

Accard, A.

J. Renaudier, R. Brenot, B. Dagens, F. Lelarge, B. Rousseau, F. Poingt, O. Legouezigou, F. Pommereau, A. Accard, P. Gallion, and G. H. Duan, “45 GHz self-pulsation with narrow linewidth in quantum dot Fabry-Perot semiconductor lasers at 1.5 μm,” Electron. Lett. 41(18), 1007–1008 (2005).
[CrossRef]

Aisawa, S.

T. Sakamoto, J. Kani, M. Jinno, S. Aisawa, M. Fukui, M. Yamada, and K. Oguchi, “Wide wavelength band (1535-1560 nm and 1574-1600 nm), 28x10Gbit/s WDM transmission over 320km dispersion-shifted fibre,” Electron. Lett. 34(4), 292–294 (1998).
[CrossRef]

Aitchison, J. S.

Akrout, A.

Allen, C. N.

Anantathanasarn, S.

Aubin, G.

C. Gosset, K. Merghem, A. Martinez, G. Moreau, P. Patriarche, G. Aubin, A. Ramdane, J. Landreau, and F. Lelarge, “Subpicosecond pulse genearation at 134 GHz using a quantum-dash-based Fabry-Perot laser emitting at 1.56 µm,” Appl. Phys. Lett. 88(24), 241105 (2006).
[CrossRef]

Barrios, P.

P. J. Poole, K. Kaminska, P. Barrios, Z. G. Lu, and J. R. Liu, “Growth of InAs/InP-based quantum dots for 1.55 µm laser applications,” J. Cryst. Growth 311(6), 1482–1486 (2009).
[CrossRef]

Barrios, P. J.

Z. G. Lu, J. R. Liu, S. Raymond, P. J. Poole, P. J. Barrios, and D. Poitras, “312-fs pulse generation from a passive C-band InAs/InP quantum dot mode-locked laser,” Opt. Express 16(14), 10835–10840 (2008).
[CrossRef] [PubMed]

J. R. Liu, Z. G. Lu, S. Raymond, P. J. Poole, P. J. Barrios, and D. Poitras, “1.6-μm multi-wavelength emission of an InAs-InGaAsP quantum-dot laser,” IEEE Photon. Technol. Lett. 20(2), 81–83 (2008).
[CrossRef]

J. R. Liu, Z. G. Lu, S. Raymond, P. J. Poole, P. J. Barrios, G. Pakulski, D. Poitras, G. Z. Xiao, and Z. Y. Zhang, “Uniform 90-channel multiwavelength InAs/InGaAsP quantum dot laser,” Electron. Lett. 43(8), 458–460 (2007).
[CrossRef]

A. J. Zilkie, J. Meier, P. W. E. Smith, M. Mojahedi, J. S. Aitchison, P. J. Poole, C. N. Allen, P. J. Barrios, and D. Poitras, “Femtosecond gain and index dynamics in an InAs/InGaAsP quantum dot amplifier operating at 1.55 microm,” Opt. Express 14(23), 11453–11459 (2006).
[CrossRef] [PubMed]

Bente, E. A. J. M.

Brenot, R.

J. Renaudier, R. Brenot, B. Dagens, F. Lelarge, B. Rousseau, F. Poingt, O. Legouezigou, F. Pommereau, A. Accard, P. Gallion, and G. H. Duan, “45 GHz self-pulsation with narrow linewidth in quantum dot Fabry-Perot semiconductor lasers at 1.5 μm,” Electron. Lett. 41(18), 1007–1008 (2005).
[CrossRef]

Cartledge, J. C.

Cataluna, M. A.

E. U. Rafailov, M. A. Cataluna, and W. Sibbett, “Mode-locked quantum-dot lasers,” Nat. Photonics 1(7), 395–401 (2007).
[CrossRef]

Cheng, J. L.

X. D. Huang, A. Stintz, H. Li, F. Lester, J. L. Cheng, and K. J. Malloy, “Passive mode-locking in 1.3 µm two-section InAs quantum dot lasers,” Appl. Phys. Lett. 78(19), 2825–2827 (2001).
[CrossRef]

Dagens, B.

J. Renaudier, R. Brenot, B. Dagens, F. Lelarge, B. Rousseau, F. Poingt, O. Legouezigou, F. Pommereau, A. Accard, P. Gallion, and G. H. Duan, “45 GHz self-pulsation with narrow linewidth in quantum dot Fabry-Perot semiconductor lasers at 1.5 μm,” Electron. Lett. 41(18), 1007–1008 (2005).
[CrossRef]

Duan, G. H.

X. F. Tang, J. C. Cartledge, A. Shen, A. Akrout, and G. H. Duan, “Low-timing-jitter all-optical clock recovery for 40 Gbits/s RZ-DPSK and NRZ-DPSK signals using a passively mode-locked quantum-dot Fabry-Perot semiconductor laser,” Opt. Lett. 34(7), 899–901 (2009).
[CrossRef] [PubMed]

J. Renaudier, R. Brenot, B. Dagens, F. Lelarge, B. Rousseau, F. Poingt, O. Legouezigou, F. Pommereau, A. Accard, P. Gallion, and G. H. Duan, “45 GHz self-pulsation with narrow linewidth in quantum dot Fabry-Perot semiconductor lasers at 1.5 μm,” Electron. Lett. 41(18), 1007–1008 (2005).
[CrossRef]

Fukui, M.

T. Sakamoto, J. Kani, M. Jinno, S. Aisawa, M. Fukui, M. Yamada, and K. Oguchi, “Wide wavelength band (1535-1560 nm and 1574-1600 nm), 28x10Gbit/s WDM transmission over 320km dispersion-shifted fibre,” Electron. Lett. 34(4), 292–294 (1998).
[CrossRef]

Gallion, P.

J. Renaudier, R. Brenot, B. Dagens, F. Lelarge, B. Rousseau, F. Poingt, O. Legouezigou, F. Pommereau, A. Accard, P. Gallion, and G. H. Duan, “45 GHz self-pulsation with narrow linewidth in quantum dot Fabry-Perot semiconductor lasers at 1.5 μm,” Electron. Lett. 41(18), 1007–1008 (2005).
[CrossRef]

Gosset, C.

C. Gosset, K. Merghem, A. Martinez, G. Moreau, P. Patriarche, G. Aubin, A. Ramdane, J. Landreau, and F. Lelarge, “Subpicosecond pulse genearation at 134 GHz using a quantum-dash-based Fabry-Perot laser emitting at 1.56 µm,” Appl. Phys. Lett. 88(24), 241105 (2006).
[CrossRef]

Heck, M. J. R.

Huang, X. D.

X. D. Huang, A. Stintz, H. Li, F. Lester, J. L. Cheng, and K. J. Malloy, “Passive mode-locking in 1.3 µm two-section InAs quantum dot lasers,” Appl. Phys. Lett. 78(19), 2825–2827 (2001).
[CrossRef]

Jinno, M.

T. Sakamoto, J. Kani, M. Jinno, S. Aisawa, M. Fukui, M. Yamada, and K. Oguchi, “Wide wavelength band (1535-1560 nm and 1574-1600 nm), 28x10Gbit/s WDM transmission over 320km dispersion-shifted fibre,” Electron. Lett. 34(4), 292–294 (1998).
[CrossRef]

Kaminska, K.

P. J. Poole, K. Kaminska, P. Barrios, Z. G. Lu, and J. R. Liu, “Growth of InAs/InP-based quantum dots for 1.55 µm laser applications,” J. Cryst. Growth 311(6), 1482–1486 (2009).
[CrossRef]

Kani, J.

T. Sakamoto, J. Kani, M. Jinno, S. Aisawa, M. Fukui, M. Yamada, and K. Oguchi, “Wide wavelength band (1535-1560 nm and 1574-1600 nm), 28x10Gbit/s WDM transmission over 320km dispersion-shifted fibre,” Electron. Lett. 34(4), 292–294 (1998).
[CrossRef]

Landreau, J.

C. Gosset, K. Merghem, A. Martinez, G. Moreau, P. Patriarche, G. Aubin, A. Ramdane, J. Landreau, and F. Lelarge, “Subpicosecond pulse genearation at 134 GHz using a quantum-dash-based Fabry-Perot laser emitting at 1.56 µm,” Appl. Phys. Lett. 88(24), 241105 (2006).
[CrossRef]

Lefebvre, J.

P. J. Poole, R. L. Williams, J. Lefebvre, and S. Moisa, “Using As/P exchange processes to modify InAs/InP quantum dots,” J. Cryst. Growth 257(1-2), 89–96 (2003).
[CrossRef]

Legouezigou, O.

J. Renaudier, R. Brenot, B. Dagens, F. Lelarge, B. Rousseau, F. Poingt, O. Legouezigou, F. Pommereau, A. Accard, P. Gallion, and G. H. Duan, “45 GHz self-pulsation with narrow linewidth in quantum dot Fabry-Perot semiconductor lasers at 1.5 μm,” Electron. Lett. 41(18), 1007–1008 (2005).
[CrossRef]

Lelarge, F.

C. Gosset, K. Merghem, A. Martinez, G. Moreau, P. Patriarche, G. Aubin, A. Ramdane, J. Landreau, and F. Lelarge, “Subpicosecond pulse genearation at 134 GHz using a quantum-dash-based Fabry-Perot laser emitting at 1.56 µm,” Appl. Phys. Lett. 88(24), 241105 (2006).
[CrossRef]

J. Renaudier, R. Brenot, B. Dagens, F. Lelarge, B. Rousseau, F. Poingt, O. Legouezigou, F. Pommereau, A. Accard, P. Gallion, and G. H. Duan, “45 GHz self-pulsation with narrow linewidth in quantum dot Fabry-Perot semiconductor lasers at 1.5 μm,” Electron. Lett. 41(18), 1007–1008 (2005).
[CrossRef]

Lester, F.

X. D. Huang, A. Stintz, H. Li, F. Lester, J. L. Cheng, and K. J. Malloy, “Passive mode-locking in 1.3 µm two-section InAs quantum dot lasers,” Appl. Phys. Lett. 78(19), 2825–2827 (2001).
[CrossRef]

Lester, L. F.

G. T. Liu, A. Stintz, H. Li, K. J. Malloy, and L. F. Lester, “Extremely low room-temperature threshold current density diode lasers using lnAs dots in In0.05Ga0.85As quantum well,” Electron. Lett. 35(14), 1163–1165 (1999).
[CrossRef]

Li, H.

X. D. Huang, A. Stintz, H. Li, F. Lester, J. L. Cheng, and K. J. Malloy, “Passive mode-locking in 1.3 µm two-section InAs quantum dot lasers,” Appl. Phys. Lett. 78(19), 2825–2827 (2001).
[CrossRef]

G. T. Liu, A. Stintz, H. Li, K. J. Malloy, and L. F. Lester, “Extremely low room-temperature threshold current density diode lasers using lnAs dots in In0.05Ga0.85As quantum well,” Electron. Lett. 35(14), 1163–1165 (1999).
[CrossRef]

Liu, G. T.

G. T. Liu, A. Stintz, H. Li, K. J. Malloy, and L. F. Lester, “Extremely low room-temperature threshold current density diode lasers using lnAs dots in In0.05Ga0.85As quantum well,” Electron. Lett. 35(14), 1163–1165 (1999).
[CrossRef]

Liu, J. R.

P. J. Poole, K. Kaminska, P. Barrios, Z. G. Lu, and J. R. Liu, “Growth of InAs/InP-based quantum dots for 1.55 µm laser applications,” J. Cryst. Growth 311(6), 1482–1486 (2009).
[CrossRef]

Z. G. Lu, J. R. Liu, S. Raymond, P. J. Poole, P. J. Barrios, and D. Poitras, “312-fs pulse generation from a passive C-band InAs/InP quantum dot mode-locked laser,” Opt. Express 16(14), 10835–10840 (2008).
[CrossRef] [PubMed]

J. R. Liu, Z. G. Lu, S. Raymond, P. J. Poole, P. J. Barrios, and D. Poitras, “1.6-μm multi-wavelength emission of an InAs-InGaAsP quantum-dot laser,” IEEE Photon. Technol. Lett. 20(2), 81–83 (2008).
[CrossRef]

J. R. Liu, Z. G. Lu, S. Raymond, P. J. Poole, P. J. Barrios, G. Pakulski, D. Poitras, G. Z. Xiao, and Z. Y. Zhang, “Uniform 90-channel multiwavelength InAs/InGaAsP quantum dot laser,” Electron. Lett. 43(8), 458–460 (2007).
[CrossRef]

Lu, Z. G.

P. J. Poole, K. Kaminska, P. Barrios, Z. G. Lu, and J. R. Liu, “Growth of InAs/InP-based quantum dots for 1.55 µm laser applications,” J. Cryst. Growth 311(6), 1482–1486 (2009).
[CrossRef]

Z. G. Lu, J. R. Liu, S. Raymond, P. J. Poole, P. J. Barrios, and D. Poitras, “312-fs pulse generation from a passive C-band InAs/InP quantum dot mode-locked laser,” Opt. Express 16(14), 10835–10840 (2008).
[CrossRef] [PubMed]

J. R. Liu, Z. G. Lu, S. Raymond, P. J. Poole, P. J. Barrios, and D. Poitras, “1.6-μm multi-wavelength emission of an InAs-InGaAsP quantum-dot laser,” IEEE Photon. Technol. Lett. 20(2), 81–83 (2008).
[CrossRef]

J. R. Liu, Z. G. Lu, S. Raymond, P. J. Poole, P. J. Barrios, G. Pakulski, D. Poitras, G. Z. Xiao, and Z. Y. Zhang, “Uniform 90-channel multiwavelength InAs/InGaAsP quantum dot laser,” Electron. Lett. 43(8), 458–460 (2007).
[CrossRef]

Malloy, K. J.

X. D. Huang, A. Stintz, H. Li, F. Lester, J. L. Cheng, and K. J. Malloy, “Passive mode-locking in 1.3 µm two-section InAs quantum dot lasers,” Appl. Phys. Lett. 78(19), 2825–2827 (2001).
[CrossRef]

G. T. Liu, A. Stintz, H. Li, K. J. Malloy, and L. F. Lester, “Extremely low room-temperature threshold current density diode lasers using lnAs dots in In0.05Ga0.85As quantum well,” Electron. Lett. 35(14), 1163–1165 (1999).
[CrossRef]

Martinez, A.

C. Gosset, K. Merghem, A. Martinez, G. Moreau, P. Patriarche, G. Aubin, A. Ramdane, J. Landreau, and F. Lelarge, “Subpicosecond pulse genearation at 134 GHz using a quantum-dash-based Fabry-Perot laser emitting at 1.56 µm,” Appl. Phys. Lett. 88(24), 241105 (2006).
[CrossRef]

Meier, J.

Merghem, K.

C. Gosset, K. Merghem, A. Martinez, G. Moreau, P. Patriarche, G. Aubin, A. Ramdane, J. Landreau, and F. Lelarge, “Subpicosecond pulse genearation at 134 GHz using a quantum-dash-based Fabry-Perot laser emitting at 1.56 µm,” Appl. Phys. Lett. 88(24), 241105 (2006).
[CrossRef]

Moisa, S.

P. J. Poole, R. L. Williams, J. Lefebvre, and S. Moisa, “Using As/P exchange processes to modify InAs/InP quantum dots,” J. Cryst. Growth 257(1-2), 89–96 (2003).
[CrossRef]

Mojahedi, M.

Moreau, G.

C. Gosset, K. Merghem, A. Martinez, G. Moreau, P. Patriarche, G. Aubin, A. Ramdane, J. Landreau, and F. Lelarge, “Subpicosecond pulse genearation at 134 GHz using a quantum-dash-based Fabry-Perot laser emitting at 1.56 µm,” Appl. Phys. Lett. 88(24), 241105 (2006).
[CrossRef]

Nì, C.

C. Nì, “Allen, P.J. Poole, P. Marshall, J. Fraser, S. Raymond and S. Fafard, “InAs self-assembled quantum dot lasers grown on (100) InP,” Appl. Phys. Lett. 80, 3629–3631 (2002).
[CrossRef]

Nötzel, R.

Oei, Y. S.

Oguchi, K.

T. Sakamoto, J. Kani, M. Jinno, S. Aisawa, M. Fukui, M. Yamada, and K. Oguchi, “Wide wavelength band (1535-1560 nm and 1574-1600 nm), 28x10Gbit/s WDM transmission over 320km dispersion-shifted fibre,” Electron. Lett. 34(4), 292–294 (1998).
[CrossRef]

Pakulski, G.

J. R. Liu, Z. G. Lu, S. Raymond, P. J. Poole, P. J. Barrios, G. Pakulski, D. Poitras, G. Z. Xiao, and Z. Y. Zhang, “Uniform 90-channel multiwavelength InAs/InGaAsP quantum dot laser,” Electron. Lett. 43(8), 458–460 (2007).
[CrossRef]

Patriarche, P.

C. Gosset, K. Merghem, A. Martinez, G. Moreau, P. Patriarche, G. Aubin, A. Ramdane, J. Landreau, and F. Lelarge, “Subpicosecond pulse genearation at 134 GHz using a quantum-dash-based Fabry-Perot laser emitting at 1.56 µm,” Appl. Phys. Lett. 88(24), 241105 (2006).
[CrossRef]

Poingt, F.

J. Renaudier, R. Brenot, B. Dagens, F. Lelarge, B. Rousseau, F. Poingt, O. Legouezigou, F. Pommereau, A. Accard, P. Gallion, and G. H. Duan, “45 GHz self-pulsation with narrow linewidth in quantum dot Fabry-Perot semiconductor lasers at 1.5 μm,” Electron. Lett. 41(18), 1007–1008 (2005).
[CrossRef]

Poitras, D.

Z. G. Lu, J. R. Liu, S. Raymond, P. J. Poole, P. J. Barrios, and D. Poitras, “312-fs pulse generation from a passive C-band InAs/InP quantum dot mode-locked laser,” Opt. Express 16(14), 10835–10840 (2008).
[CrossRef] [PubMed]

J. R. Liu, Z. G. Lu, S. Raymond, P. J. Poole, P. J. Barrios, and D. Poitras, “1.6-μm multi-wavelength emission of an InAs-InGaAsP quantum-dot laser,” IEEE Photon. Technol. Lett. 20(2), 81–83 (2008).
[CrossRef]

J. R. Liu, Z. G. Lu, S. Raymond, P. J. Poole, P. J. Barrios, G. Pakulski, D. Poitras, G. Z. Xiao, and Z. Y. Zhang, “Uniform 90-channel multiwavelength InAs/InGaAsP quantum dot laser,” Electron. Lett. 43(8), 458–460 (2007).
[CrossRef]

A. J. Zilkie, J. Meier, P. W. E. Smith, M. Mojahedi, J. S. Aitchison, P. J. Poole, C. N. Allen, P. J. Barrios, and D. Poitras, “Femtosecond gain and index dynamics in an InAs/InGaAsP quantum dot amplifier operating at 1.55 microm,” Opt. Express 14(23), 11453–11459 (2006).
[CrossRef] [PubMed]

Pommereau, F.

J. Renaudier, R. Brenot, B. Dagens, F. Lelarge, B. Rousseau, F. Poingt, O. Legouezigou, F. Pommereau, A. Accard, P. Gallion, and G. H. Duan, “45 GHz self-pulsation with narrow linewidth in quantum dot Fabry-Perot semiconductor lasers at 1.5 μm,” Electron. Lett. 41(18), 1007–1008 (2005).
[CrossRef]

Poole, P. J.

P. J. Poole, K. Kaminska, P. Barrios, Z. G. Lu, and J. R. Liu, “Growth of InAs/InP-based quantum dots for 1.55 µm laser applications,” J. Cryst. Growth 311(6), 1482–1486 (2009).
[CrossRef]

Z. G. Lu, J. R. Liu, S. Raymond, P. J. Poole, P. J. Barrios, and D. Poitras, “312-fs pulse generation from a passive C-band InAs/InP quantum dot mode-locked laser,” Opt. Express 16(14), 10835–10840 (2008).
[CrossRef] [PubMed]

J. R. Liu, Z. G. Lu, S. Raymond, P. J. Poole, P. J. Barrios, and D. Poitras, “1.6-μm multi-wavelength emission of an InAs-InGaAsP quantum-dot laser,” IEEE Photon. Technol. Lett. 20(2), 81–83 (2008).
[CrossRef]

J. R. Liu, Z. G. Lu, S. Raymond, P. J. Poole, P. J. Barrios, G. Pakulski, D. Poitras, G. Z. Xiao, and Z. Y. Zhang, “Uniform 90-channel multiwavelength InAs/InGaAsP quantum dot laser,” Electron. Lett. 43(8), 458–460 (2007).
[CrossRef]

A. J. Zilkie, J. Meier, P. W. E. Smith, M. Mojahedi, J. S. Aitchison, P. J. Poole, C. N. Allen, P. J. Barrios, and D. Poitras, “Femtosecond gain and index dynamics in an InAs/InGaAsP quantum dot amplifier operating at 1.55 microm,” Opt. Express 14(23), 11453–11459 (2006).
[CrossRef] [PubMed]

P. J. Poole, R. L. Williams, J. Lefebvre, and S. Moisa, “Using As/P exchange processes to modify InAs/InP quantum dots,” J. Cryst. Growth 257(1-2), 89–96 (2003).
[CrossRef]

Rafailov, E. U.

E. U. Rafailov, M. A. Cataluna, and W. Sibbett, “Mode-locked quantum-dot lasers,” Nat. Photonics 1(7), 395–401 (2007).
[CrossRef]

Ramdane, A.

C. Gosset, K. Merghem, A. Martinez, G. Moreau, P. Patriarche, G. Aubin, A. Ramdane, J. Landreau, and F. Lelarge, “Subpicosecond pulse genearation at 134 GHz using a quantum-dash-based Fabry-Perot laser emitting at 1.56 µm,” Appl. Phys. Lett. 88(24), 241105 (2006).
[CrossRef]

Raymond, S.

J. R. Liu, Z. G. Lu, S. Raymond, P. J. Poole, P. J. Barrios, and D. Poitras, “1.6-μm multi-wavelength emission of an InAs-InGaAsP quantum-dot laser,” IEEE Photon. Technol. Lett. 20(2), 81–83 (2008).
[CrossRef]

Z. G. Lu, J. R. Liu, S. Raymond, P. J. Poole, P. J. Barrios, and D. Poitras, “312-fs pulse generation from a passive C-band InAs/InP quantum dot mode-locked laser,” Opt. Express 16(14), 10835–10840 (2008).
[CrossRef] [PubMed]

J. R. Liu, Z. G. Lu, S. Raymond, P. J. Poole, P. J. Barrios, G. Pakulski, D. Poitras, G. Z. Xiao, and Z. Y. Zhang, “Uniform 90-channel multiwavelength InAs/InGaAsP quantum dot laser,” Electron. Lett. 43(8), 458–460 (2007).
[CrossRef]

Renaudier, J.

J. Renaudier, R. Brenot, B. Dagens, F. Lelarge, B. Rousseau, F. Poingt, O. Legouezigou, F. Pommereau, A. Accard, P. Gallion, and G. H. Duan, “45 GHz self-pulsation with narrow linewidth in quantum dot Fabry-Perot semiconductor lasers at 1.5 μm,” Electron. Lett. 41(18), 1007–1008 (2005).
[CrossRef]

Rousseau, B.

J. Renaudier, R. Brenot, B. Dagens, F. Lelarge, B. Rousseau, F. Poingt, O. Legouezigou, F. Pommereau, A. Accard, P. Gallion, and G. H. Duan, “45 GHz self-pulsation with narrow linewidth in quantum dot Fabry-Perot semiconductor lasers at 1.5 μm,” Electron. Lett. 41(18), 1007–1008 (2005).
[CrossRef]

Sakamoto, T.

T. Sakamoto, J. Kani, M. Jinno, S. Aisawa, M. Fukui, M. Yamada, and K. Oguchi, “Wide wavelength band (1535-1560 nm and 1574-1600 nm), 28x10Gbit/s WDM transmission over 320km dispersion-shifted fibre,” Electron. Lett. 34(4), 292–294 (1998).
[CrossRef]

Shen, A.

Sibbett, W.

E. U. Rafailov, M. A. Cataluna, and W. Sibbett, “Mode-locked quantum-dot lasers,” Nat. Photonics 1(7), 395–401 (2007).
[CrossRef]

Smalbrugge, B.

Smit, M. K.

Smith, P. W. E.

Stintz, A.

X. D. Huang, A. Stintz, H. Li, F. Lester, J. L. Cheng, and K. J. Malloy, “Passive mode-locking in 1.3 µm two-section InAs quantum dot lasers,” Appl. Phys. Lett. 78(19), 2825–2827 (2001).
[CrossRef]

G. T. Liu, A. Stintz, H. Li, K. J. Malloy, and L. F. Lester, “Extremely low room-temperature threshold current density diode lasers using lnAs dots in In0.05Ga0.85As quantum well,” Electron. Lett. 35(14), 1163–1165 (1999).
[CrossRef]

Tang, X. F.

Williams, R. L.

P. J. Poole, R. L. Williams, J. Lefebvre, and S. Moisa, “Using As/P exchange processes to modify InAs/InP quantum dots,” J. Cryst. Growth 257(1-2), 89–96 (2003).
[CrossRef]

Xiao, G. Z.

J. R. Liu, Z. G. Lu, S. Raymond, P. J. Poole, P. J. Barrios, G. Pakulski, D. Poitras, G. Z. Xiao, and Z. Y. Zhang, “Uniform 90-channel multiwavelength InAs/InGaAsP quantum dot laser,” Electron. Lett. 43(8), 458–460 (2007).
[CrossRef]

Yamada, M.

T. Sakamoto, J. Kani, M. Jinno, S. Aisawa, M. Fukui, M. Yamada, and K. Oguchi, “Wide wavelength band (1535-1560 nm and 1574-1600 nm), 28x10Gbit/s WDM transmission over 320km dispersion-shifted fibre,” Electron. Lett. 34(4), 292–294 (1998).
[CrossRef]

Zhang, Z. Y.

J. R. Liu, Z. G. Lu, S. Raymond, P. J. Poole, P. J. Barrios, G. Pakulski, D. Poitras, G. Z. Xiao, and Z. Y. Zhang, “Uniform 90-channel multiwavelength InAs/InGaAsP quantum dot laser,” Electron. Lett. 43(8), 458–460 (2007).
[CrossRef]

Zilkie, A. J.

Appl. Phys. Lett.

X. D. Huang, A. Stintz, H. Li, F. Lester, J. L. Cheng, and K. J. Malloy, “Passive mode-locking in 1.3 µm two-section InAs quantum dot lasers,” Appl. Phys. Lett. 78(19), 2825–2827 (2001).
[CrossRef]

C. Nì, “Allen, P.J. Poole, P. Marshall, J. Fraser, S. Raymond and S. Fafard, “InAs self-assembled quantum dot lasers grown on (100) InP,” Appl. Phys. Lett. 80, 3629–3631 (2002).
[CrossRef]

C. Gosset, K. Merghem, A. Martinez, G. Moreau, P. Patriarche, G. Aubin, A. Ramdane, J. Landreau, and F. Lelarge, “Subpicosecond pulse genearation at 134 GHz using a quantum-dash-based Fabry-Perot laser emitting at 1.56 µm,” Appl. Phys. Lett. 88(24), 241105 (2006).
[CrossRef]

Electron. Lett.

J. R. Liu, Z. G. Lu, S. Raymond, P. J. Poole, P. J. Barrios, G. Pakulski, D. Poitras, G. Z. Xiao, and Z. Y. Zhang, “Uniform 90-channel multiwavelength InAs/InGaAsP quantum dot laser,” Electron. Lett. 43(8), 458–460 (2007).
[CrossRef]

J. Renaudier, R. Brenot, B. Dagens, F. Lelarge, B. Rousseau, F. Poingt, O. Legouezigou, F. Pommereau, A. Accard, P. Gallion, and G. H. Duan, “45 GHz self-pulsation with narrow linewidth in quantum dot Fabry-Perot semiconductor lasers at 1.5 μm,” Electron. Lett. 41(18), 1007–1008 (2005).
[CrossRef]

T. Sakamoto, J. Kani, M. Jinno, S. Aisawa, M. Fukui, M. Yamada, and K. Oguchi, “Wide wavelength band (1535-1560 nm and 1574-1600 nm), 28x10Gbit/s WDM transmission over 320km dispersion-shifted fibre,” Electron. Lett. 34(4), 292–294 (1998).
[CrossRef]

G. T. Liu, A. Stintz, H. Li, K. J. Malloy, and L. F. Lester, “Extremely low room-temperature threshold current density diode lasers using lnAs dots in In0.05Ga0.85As quantum well,” Electron. Lett. 35(14), 1163–1165 (1999).
[CrossRef]

IEEE Photon. Technol. Lett.

J. R. Liu, Z. G. Lu, S. Raymond, P. J. Poole, P. J. Barrios, and D. Poitras, “1.6-μm multi-wavelength emission of an InAs-InGaAsP quantum-dot laser,” IEEE Photon. Technol. Lett. 20(2), 81–83 (2008).
[CrossRef]

J. Cryst. Growth

P. J. Poole, R. L. Williams, J. Lefebvre, and S. Moisa, “Using As/P exchange processes to modify InAs/InP quantum dots,” J. Cryst. Growth 257(1-2), 89–96 (2003).
[CrossRef]

P. J. Poole, K. Kaminska, P. Barrios, Z. G. Lu, and J. R. Liu, “Growth of InAs/InP-based quantum dots for 1.55 µm laser applications,” J. Cryst. Growth 311(6), 1482–1486 (2009).
[CrossRef]

Nat. Photonics

E. U. Rafailov, M. A. Cataluna, and W. Sibbett, “Mode-locked quantum-dot lasers,” Nat. Photonics 1(7), 395–401 (2007).
[CrossRef]

Opt. Express

Opt. Lett.

Other

Z. G. Lu, J. R. Liu, S. Raymond, P. J. Poole, P. J. Barrios, and D. Poitras, “Femtosecond pulse generation in a C-band quantum dot laser,” The Proceedings of SPIE: Optoelectronic Materials and Devices III (edited by Yi Luo, Jens Buus, Fumio Koyama, and Yu-Hwa Lo), 7135, 71352L–1-7 (2008).

Z. G. Lu, J. R. Liu, S. Raymond, P. J. Poole, P. J. Barrios, G. Pakulski, D. Poitras, F. G. Sun, S. Taebi, and T. J. Hall, “Ultra-broadband quantum-dot semiconductor optical amplifier and its applications,” The Proceedings of the Optical Fiber Communication Conference, Anaheim, CA, USA, paper JThA33 (25–29 March 2007).

R. Brenot, F. Lelarge, O. Legouezigou, F. Pommereau, F. Poingt, L. Legouezigou, E. Derouin, O. Drisse, B. Rousseau, F. Martin, and G. H. Duan, “Quantum dots semiconductor optical amplifier with 3-dB bandwidth of up to 120 nm in semi-cooled operation,” The Proceedings of the Optical Fiber Communication Conference, San Diego, CA, USA, paper OTuC1 (24–28 February 2008).

Y. Tanaka, M. Ishida, Y. Maeda, T. Akiyama, T. Yamamoto, H. Z. Song, M. Yamaguchi, Y. Nakata, K. Nishi, M. Sugawara, and Y. Arakawa, “High-speed and temperature-insensitive operation in 1.3-µm InAs/GaAs high-density quantum dot lasers,” The Proceedings of the Optical Fiber Communication Conference, San Diego, CA, USA, paper OWJ1 (24–26 March 2009).

K. M. Sivalingam, and S. Subramaniam, “Optical WDM Networks — Principles and Practice,” 3–374 (Springer, Berlin Heidelberg, 2000).

L.A. Jiang, E.P. Ippen and H. Yokoyama, “Semiconductor mode-locked lasers as pulse sources for high bit rate data transmission,” in Book Series of Ultrahigh-Speed Optical Transmission Technology3, 21–51 (Springer Berlin Heidelberg, 2007).
[CrossRef]

Z. G. Lu, J. R. Liu, P. J. Poole, S. Raymond, P. J. Barrios, D. Poitras, G. Pakulski, X. P. Zhang, K. Hinzer, and T. J. Hall, “Low noise InAs/InP quantum dot C-band monolithic multiwavelength lasers for WDM-PONs,” The Proceedings of the Optical Fiber Communication Conference, San Diego, CA, USA, paper JWA27 (24–26 March 2009).

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Figures (6)

Fig. 1.
Fig. 1.

(a) Photoluminescence at room temperature of InAs/InP QD layer as a function of the cap layer thickness; (b) The corresponding spectra of laser devices with a core QD layer grown in the above two different conditions.

Fig. 2.
Fig. 2.

(a) Schematics of an L-band InAs/InP quantum-dot mode-locked laser (QD-MLL); (b) An optical spectrum of the L-band QD MLL at an injection current of 180 mA at 18°C.

Fig. 3.
Fig. 3.

The average output power and the 3-dB bandwidth versus the injection current of an L-band QD MLL

Fig. 4.
Fig. 4.

The measured RF peak at 46 GHz, shown in an 100 MHz span. The 3 dB RF linewidth is less than 100 KHz.

Fig. 5.
Fig. 5.

Mode-beating linewidth of less than 20 KHz measured by using a delayed self-heterodyne interferometer

Fig. 6.
Fig. 6.

(a) Optical intensity autocorrelation trace. The real pulse duration is estimated at 445 fs. The inset is an optical intensity autocorrelation pulse train with the periodic time of 21.74 ps, which corresponds to the repetition rate of 46 GHz; (b) Pulse duration and time-bandwidth product (TBP) versus injection current

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