Abstract

The effect of electric field on near-band-edge (NBE) photoluminescence (PL) of a sol-gel derived ZnO film has been investigated via a SiO2/ZnO/SiOx(x<2) double-barrier structure on Si under different forward biases. A forward current-voltage curve is characterized by a negative-differential-resistance (NDR) region, which follows a normal region. With an increase of forward bias the NBE PL of the ZnO film is enhanced in the normal region, but it is attenuated in the NDR region. The increase of forward bias also causes the NBE PL of the ZnO film to blueshift from ~377.6 to ~374.9 nm no matter how current changes. The mechanism for the effect of bias on the intensity and position of NBE PL of the ZnO film is discussed.

© 2009 OSA

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  1. Ü. Özgür, Y. I. Alivov, C. Liu, A. Teke, M. A. Reshchikov, S. Doğan, V. Avrutin, S.-J. Cho, and H. Morkoç, “A comprehensive review of ZnO materials and devices,” J. Appl. Phys. 98(4), 041301 (2005).
    [CrossRef]
  2. S. J. Pearton, D. P. Norton, K. Ip, Y. W. Heo, and T. Steiner, “Recent progress in processing and properties of ZnO,” Prog. Mater. Sci. 50(3), 293–340 (2005).
    [CrossRef]
  3. Z. Fu, B. Yang, L. Li, W. Dong, C. Jia, and W. Wu, “An intense ultraviolet photoluminescence in sol-gel ZnO-SiO2 nanocomposites,” J. Phys. Condens. Matter 15(17), 2867–2873 (2003).
    [CrossRef]
  4. K. C. Hui, J. An, X. Y. Zhang, J. B. Xu, J. Y. Dai, and H. C. Ong, “Electron beam induced light emission and charge conduction patterning in ZnO by using an AlOx Layer,” Adv. Mater. 17(16), 1960–1964 (2005).
    [CrossRef]
  5. K. Kim, H. Tampo, J. Song, T. Seong, S. Park, J. Lee, S. Kim, S. Fujita, and S. Niki, “Effect of rapid thermal annealing on Al doped n-ZnO films grown by RF-magnetron sputtering,” Jpn. J. Appl. Phys. 44(No. 7A), 4776–4779 (2005).
    [CrossRef]
  6. H. Y. Lin, C. L. Cheng, Y. Y. Chou, L. L. Huang, Y. F. Chen, and K. T. Tsen, “Enhancement of band gap emission stimulated by defect loss,” Opt. Express 14(6), 2372–2379 (2006).
    [CrossRef]
  7. V. A. Coleman, J. E. Bradby, C. Jagadish, and M. R. Phillips, “Observation of enhanced defect emission and excitonic quenching from spherically indented ZnO,” Appl. Phys. Lett. 89(8), 082102 (2006).
    [CrossRef]
  8. J. V. Foreman, J. Li, H. Peng, S. Choi, H. O. Everitt, and J. Liu, “Time-resolved investigation of bright visible wavelength luminescence from sulfur-doped ZnO nanowires and micropowders,” Nano Lett. 6(6), 1126–1130 (2006).
    [CrossRef]
  9. S. Gao, H. Zhang, R. Deng, X. Wang, D. Sun, and G. Zheng, “Engineering white light-emitting Eu-doped ZnO urchins by biopolymer-assisted hydrothermal method,” Appl. Phys. Lett. 89(12), 123125 (2006).
    [CrossRef]
  10. J. W. P. Hsu, D. R. Tallant, R. L. Simpson, N. A. Missert, and R. G. Copeland, “Luminescent properties of solution-grown ZnO nanorods,” Appl. Phys. Lett. 88(25), 252103 (2006).
    [CrossRef]
  11. P. Cheng, D. Li, Z. Yuan, P. Chen, and D. Yang, “Enhancement of ZnO light emission via coupling with localized surface plasmon of Ag island film,” Appl. Phys. Lett. 92(4), 041119 (2008).
    [CrossRef]
  12. P. Cheng, D. Li, and D. Yang, “Influence of substrates in ZnO devices on the surface plasmon enhanced light emission,” Opt. Express 16(12), 8896–8901 (2008).
    [CrossRef]
  13. S. Kim, C. Oh Kim, H. Taek Oh, and S.-H. Choi, “Strong enhancement of near-band-edge photoluminescence from ZnO by assembling ZnO/SiOx heterostructures,” J. Phys. D Appl. Phys. 41(23), 235403 (2008).
    [CrossRef]
  14. B. Chen, H. Zhang, N. Du, D. Li, X. Ma, and D. Yang, “Hybrid nanostructures of Au nanocrystals and ZnO nanorods: Layer-by-layer assembly and tunable blue-shift band gap emission,” Mater. Res. Bull. 44(4), 889–892 (2009).
    [CrossRef]
  15. X. Ma, P. Chen, D. Li, Y. Zhang, and D. Yang, “Electrophotoluminescence of ZnO film,” Appl. Phys. Lett. 91(2), 021105 (2007).
    [CrossRef]
  16. P. Chen, X. Ma, D. Li, Y. Zhang, and D. Yang, “Electrically pumped ultraviolet random lasing from ZnO-based metal-insulator-semiconductor devices: dependence on carrier transport,” Opt. Express 17(6), 4712–4717 (2009).
    [CrossRef]

2009 (2)

B. Chen, H. Zhang, N. Du, D. Li, X. Ma, and D. Yang, “Hybrid nanostructures of Au nanocrystals and ZnO nanorods: Layer-by-layer assembly and tunable blue-shift band gap emission,” Mater. Res. Bull. 44(4), 889–892 (2009).
[CrossRef]

P. Chen, X. Ma, D. Li, Y. Zhang, and D. Yang, “Electrically pumped ultraviolet random lasing from ZnO-based metal-insulator-semiconductor devices: dependence on carrier transport,” Opt. Express 17(6), 4712–4717 (2009).
[CrossRef]

2008 (3)

P. Cheng, D. Li, and D. Yang, “Influence of substrates in ZnO devices on the surface plasmon enhanced light emission,” Opt. Express 16(12), 8896–8901 (2008).
[CrossRef]

P. Cheng, D. Li, Z. Yuan, P. Chen, and D. Yang, “Enhancement of ZnO light emission via coupling with localized surface plasmon of Ag island film,” Appl. Phys. Lett. 92(4), 041119 (2008).
[CrossRef]

S. Kim, C. Oh Kim, H. Taek Oh, and S.-H. Choi, “Strong enhancement of near-band-edge photoluminescence from ZnO by assembling ZnO/SiOx heterostructures,” J. Phys. D Appl. Phys. 41(23), 235403 (2008).
[CrossRef]

2007 (1)

X. Ma, P. Chen, D. Li, Y. Zhang, and D. Yang, “Electrophotoluminescence of ZnO film,” Appl. Phys. Lett. 91(2), 021105 (2007).
[CrossRef]

2006 (5)

H. Y. Lin, C. L. Cheng, Y. Y. Chou, L. L. Huang, Y. F. Chen, and K. T. Tsen, “Enhancement of band gap emission stimulated by defect loss,” Opt. Express 14(6), 2372–2379 (2006).
[CrossRef]

V. A. Coleman, J. E. Bradby, C. Jagadish, and M. R. Phillips, “Observation of enhanced defect emission and excitonic quenching from spherically indented ZnO,” Appl. Phys. Lett. 89(8), 082102 (2006).
[CrossRef]

J. V. Foreman, J. Li, H. Peng, S. Choi, H. O. Everitt, and J. Liu, “Time-resolved investigation of bright visible wavelength luminescence from sulfur-doped ZnO nanowires and micropowders,” Nano Lett. 6(6), 1126–1130 (2006).
[CrossRef]

S. Gao, H. Zhang, R. Deng, X. Wang, D. Sun, and G. Zheng, “Engineering white light-emitting Eu-doped ZnO urchins by biopolymer-assisted hydrothermal method,” Appl. Phys. Lett. 89(12), 123125 (2006).
[CrossRef]

J. W. P. Hsu, D. R. Tallant, R. L. Simpson, N. A. Missert, and R. G. Copeland, “Luminescent properties of solution-grown ZnO nanorods,” Appl. Phys. Lett. 88(25), 252103 (2006).
[CrossRef]

2005 (4)

Ü. Özgür, Y. I. Alivov, C. Liu, A. Teke, M. A. Reshchikov, S. Doğan, V. Avrutin, S.-J. Cho, and H. Morkoç, “A comprehensive review of ZnO materials and devices,” J. Appl. Phys. 98(4), 041301 (2005).
[CrossRef]

S. J. Pearton, D. P. Norton, K. Ip, Y. W. Heo, and T. Steiner, “Recent progress in processing and properties of ZnO,” Prog. Mater. Sci. 50(3), 293–340 (2005).
[CrossRef]

K. C. Hui, J. An, X. Y. Zhang, J. B. Xu, J. Y. Dai, and H. C. Ong, “Electron beam induced light emission and charge conduction patterning in ZnO by using an AlOx Layer,” Adv. Mater. 17(16), 1960–1964 (2005).
[CrossRef]

K. Kim, H. Tampo, J. Song, T. Seong, S. Park, J. Lee, S. Kim, S. Fujita, and S. Niki, “Effect of rapid thermal annealing on Al doped n-ZnO films grown by RF-magnetron sputtering,” Jpn. J. Appl. Phys. 44(No. 7A), 4776–4779 (2005).
[CrossRef]

2003 (1)

Z. Fu, B. Yang, L. Li, W. Dong, C. Jia, and W. Wu, “An intense ultraviolet photoluminescence in sol-gel ZnO-SiO2 nanocomposites,” J. Phys. Condens. Matter 15(17), 2867–2873 (2003).
[CrossRef]

Alivov, Y. I.

Ü. Özgür, Y. I. Alivov, C. Liu, A. Teke, M. A. Reshchikov, S. Doğan, V. Avrutin, S.-J. Cho, and H. Morkoç, “A comprehensive review of ZnO materials and devices,” J. Appl. Phys. 98(4), 041301 (2005).
[CrossRef]

An, J.

K. C. Hui, J. An, X. Y. Zhang, J. B. Xu, J. Y. Dai, and H. C. Ong, “Electron beam induced light emission and charge conduction patterning in ZnO by using an AlOx Layer,” Adv. Mater. 17(16), 1960–1964 (2005).
[CrossRef]

Avrutin, V.

Ü. Özgür, Y. I. Alivov, C. Liu, A. Teke, M. A. Reshchikov, S. Doğan, V. Avrutin, S.-J. Cho, and H. Morkoç, “A comprehensive review of ZnO materials and devices,” J. Appl. Phys. 98(4), 041301 (2005).
[CrossRef]

Bradby, J. E.

V. A. Coleman, J. E. Bradby, C. Jagadish, and M. R. Phillips, “Observation of enhanced defect emission and excitonic quenching from spherically indented ZnO,” Appl. Phys. Lett. 89(8), 082102 (2006).
[CrossRef]

Chen, B.

B. Chen, H. Zhang, N. Du, D. Li, X. Ma, and D. Yang, “Hybrid nanostructures of Au nanocrystals and ZnO nanorods: Layer-by-layer assembly and tunable blue-shift band gap emission,” Mater. Res. Bull. 44(4), 889–892 (2009).
[CrossRef]

Chen, P.

P. Chen, X. Ma, D. Li, Y. Zhang, and D. Yang, “Electrically pumped ultraviolet random lasing from ZnO-based metal-insulator-semiconductor devices: dependence on carrier transport,” Opt. Express 17(6), 4712–4717 (2009).
[CrossRef]

P. Cheng, D. Li, Z. Yuan, P. Chen, and D. Yang, “Enhancement of ZnO light emission via coupling with localized surface plasmon of Ag island film,” Appl. Phys. Lett. 92(4), 041119 (2008).
[CrossRef]

X. Ma, P. Chen, D. Li, Y. Zhang, and D. Yang, “Electrophotoluminescence of ZnO film,” Appl. Phys. Lett. 91(2), 021105 (2007).
[CrossRef]

Chen, Y. F.

Cheng, C. L.

Cheng, P.

P. Cheng, D. Li, Z. Yuan, P. Chen, and D. Yang, “Enhancement of ZnO light emission via coupling with localized surface plasmon of Ag island film,” Appl. Phys. Lett. 92(4), 041119 (2008).
[CrossRef]

P. Cheng, D. Li, and D. Yang, “Influence of substrates in ZnO devices on the surface plasmon enhanced light emission,” Opt. Express 16(12), 8896–8901 (2008).
[CrossRef]

Cho, S.-J.

Ü. Özgür, Y. I. Alivov, C. Liu, A. Teke, M. A. Reshchikov, S. Doğan, V. Avrutin, S.-J. Cho, and H. Morkoç, “A comprehensive review of ZnO materials and devices,” J. Appl. Phys. 98(4), 041301 (2005).
[CrossRef]

Choi, S.

J. V. Foreman, J. Li, H. Peng, S. Choi, H. O. Everitt, and J. Liu, “Time-resolved investigation of bright visible wavelength luminescence from sulfur-doped ZnO nanowires and micropowders,” Nano Lett. 6(6), 1126–1130 (2006).
[CrossRef]

Choi, S.-H.

S. Kim, C. Oh Kim, H. Taek Oh, and S.-H. Choi, “Strong enhancement of near-band-edge photoluminescence from ZnO by assembling ZnO/SiOx heterostructures,” J. Phys. D Appl. Phys. 41(23), 235403 (2008).
[CrossRef]

Chou, Y. Y.

Coleman, V. A.

V. A. Coleman, J. E. Bradby, C. Jagadish, and M. R. Phillips, “Observation of enhanced defect emission and excitonic quenching from spherically indented ZnO,” Appl. Phys. Lett. 89(8), 082102 (2006).
[CrossRef]

Copeland, R. G.

J. W. P. Hsu, D. R. Tallant, R. L. Simpson, N. A. Missert, and R. G. Copeland, “Luminescent properties of solution-grown ZnO nanorods,” Appl. Phys. Lett. 88(25), 252103 (2006).
[CrossRef]

Dai, J. Y.

K. C. Hui, J. An, X. Y. Zhang, J. B. Xu, J. Y. Dai, and H. C. Ong, “Electron beam induced light emission and charge conduction patterning in ZnO by using an AlOx Layer,” Adv. Mater. 17(16), 1960–1964 (2005).
[CrossRef]

Deng, R.

S. Gao, H. Zhang, R. Deng, X. Wang, D. Sun, and G. Zheng, “Engineering white light-emitting Eu-doped ZnO urchins by biopolymer-assisted hydrothermal method,” Appl. Phys. Lett. 89(12), 123125 (2006).
[CrossRef]

Dogan, S.

Ü. Özgür, Y. I. Alivov, C. Liu, A. Teke, M. A. Reshchikov, S. Doğan, V. Avrutin, S.-J. Cho, and H. Morkoç, “A comprehensive review of ZnO materials and devices,” J. Appl. Phys. 98(4), 041301 (2005).
[CrossRef]

Dong, W.

Z. Fu, B. Yang, L. Li, W. Dong, C. Jia, and W. Wu, “An intense ultraviolet photoluminescence in sol-gel ZnO-SiO2 nanocomposites,” J. Phys. Condens. Matter 15(17), 2867–2873 (2003).
[CrossRef]

Du, N.

B. Chen, H. Zhang, N. Du, D. Li, X. Ma, and D. Yang, “Hybrid nanostructures of Au nanocrystals and ZnO nanorods: Layer-by-layer assembly and tunable blue-shift band gap emission,” Mater. Res. Bull. 44(4), 889–892 (2009).
[CrossRef]

Everitt, H. O.

J. V. Foreman, J. Li, H. Peng, S. Choi, H. O. Everitt, and J. Liu, “Time-resolved investigation of bright visible wavelength luminescence from sulfur-doped ZnO nanowires and micropowders,” Nano Lett. 6(6), 1126–1130 (2006).
[CrossRef]

Foreman, J. V.

J. V. Foreman, J. Li, H. Peng, S. Choi, H. O. Everitt, and J. Liu, “Time-resolved investigation of bright visible wavelength luminescence from sulfur-doped ZnO nanowires and micropowders,” Nano Lett. 6(6), 1126–1130 (2006).
[CrossRef]

Fu, Z.

Z. Fu, B. Yang, L. Li, W. Dong, C. Jia, and W. Wu, “An intense ultraviolet photoluminescence in sol-gel ZnO-SiO2 nanocomposites,” J. Phys. Condens. Matter 15(17), 2867–2873 (2003).
[CrossRef]

Fujita, S.

K. Kim, H. Tampo, J. Song, T. Seong, S. Park, J. Lee, S. Kim, S. Fujita, and S. Niki, “Effect of rapid thermal annealing on Al doped n-ZnO films grown by RF-magnetron sputtering,” Jpn. J. Appl. Phys. 44(No. 7A), 4776–4779 (2005).
[CrossRef]

Gao, S.

S. Gao, H. Zhang, R. Deng, X. Wang, D. Sun, and G. Zheng, “Engineering white light-emitting Eu-doped ZnO urchins by biopolymer-assisted hydrothermal method,” Appl. Phys. Lett. 89(12), 123125 (2006).
[CrossRef]

Heo, Y. W.

S. J. Pearton, D. P. Norton, K. Ip, Y. W. Heo, and T. Steiner, “Recent progress in processing and properties of ZnO,” Prog. Mater. Sci. 50(3), 293–340 (2005).
[CrossRef]

Hsu, J. W. P.

J. W. P. Hsu, D. R. Tallant, R. L. Simpson, N. A. Missert, and R. G. Copeland, “Luminescent properties of solution-grown ZnO nanorods,” Appl. Phys. Lett. 88(25), 252103 (2006).
[CrossRef]

Huang, L. L.

Hui, K. C.

K. C. Hui, J. An, X. Y. Zhang, J. B. Xu, J. Y. Dai, and H. C. Ong, “Electron beam induced light emission and charge conduction patterning in ZnO by using an AlOx Layer,” Adv. Mater. 17(16), 1960–1964 (2005).
[CrossRef]

Ip, K.

S. J. Pearton, D. P. Norton, K. Ip, Y. W. Heo, and T. Steiner, “Recent progress in processing and properties of ZnO,” Prog. Mater. Sci. 50(3), 293–340 (2005).
[CrossRef]

Jagadish, C.

V. A. Coleman, J. E. Bradby, C. Jagadish, and M. R. Phillips, “Observation of enhanced defect emission and excitonic quenching from spherically indented ZnO,” Appl. Phys. Lett. 89(8), 082102 (2006).
[CrossRef]

Jia, C.

Z. Fu, B. Yang, L. Li, W. Dong, C. Jia, and W. Wu, “An intense ultraviolet photoluminescence in sol-gel ZnO-SiO2 nanocomposites,” J. Phys. Condens. Matter 15(17), 2867–2873 (2003).
[CrossRef]

Kim, K.

K. Kim, H. Tampo, J. Song, T. Seong, S. Park, J. Lee, S. Kim, S. Fujita, and S. Niki, “Effect of rapid thermal annealing on Al doped n-ZnO films grown by RF-magnetron sputtering,” Jpn. J. Appl. Phys. 44(No. 7A), 4776–4779 (2005).
[CrossRef]

Kim, S.

S. Kim, C. Oh Kim, H. Taek Oh, and S.-H. Choi, “Strong enhancement of near-band-edge photoluminescence from ZnO by assembling ZnO/SiOx heterostructures,” J. Phys. D Appl. Phys. 41(23), 235403 (2008).
[CrossRef]

K. Kim, H. Tampo, J. Song, T. Seong, S. Park, J. Lee, S. Kim, S. Fujita, and S. Niki, “Effect of rapid thermal annealing on Al doped n-ZnO films grown by RF-magnetron sputtering,” Jpn. J. Appl. Phys. 44(No. 7A), 4776–4779 (2005).
[CrossRef]

Lee, J.

K. Kim, H. Tampo, J. Song, T. Seong, S. Park, J. Lee, S. Kim, S. Fujita, and S. Niki, “Effect of rapid thermal annealing on Al doped n-ZnO films grown by RF-magnetron sputtering,” Jpn. J. Appl. Phys. 44(No. 7A), 4776–4779 (2005).
[CrossRef]

Li, D.

P. Chen, X. Ma, D. Li, Y. Zhang, and D. Yang, “Electrically pumped ultraviolet random lasing from ZnO-based metal-insulator-semiconductor devices: dependence on carrier transport,” Opt. Express 17(6), 4712–4717 (2009).
[CrossRef]

B. Chen, H. Zhang, N. Du, D. Li, X. Ma, and D. Yang, “Hybrid nanostructures of Au nanocrystals and ZnO nanorods: Layer-by-layer assembly and tunable blue-shift band gap emission,” Mater. Res. Bull. 44(4), 889–892 (2009).
[CrossRef]

P. Cheng, D. Li, and D. Yang, “Influence of substrates in ZnO devices on the surface plasmon enhanced light emission,” Opt. Express 16(12), 8896–8901 (2008).
[CrossRef]

P. Cheng, D. Li, Z. Yuan, P. Chen, and D. Yang, “Enhancement of ZnO light emission via coupling with localized surface plasmon of Ag island film,” Appl. Phys. Lett. 92(4), 041119 (2008).
[CrossRef]

X. Ma, P. Chen, D. Li, Y. Zhang, and D. Yang, “Electrophotoluminescence of ZnO film,” Appl. Phys. Lett. 91(2), 021105 (2007).
[CrossRef]

Li, J.

J. V. Foreman, J. Li, H. Peng, S. Choi, H. O. Everitt, and J. Liu, “Time-resolved investigation of bright visible wavelength luminescence from sulfur-doped ZnO nanowires and micropowders,” Nano Lett. 6(6), 1126–1130 (2006).
[CrossRef]

Li, L.

Z. Fu, B. Yang, L. Li, W. Dong, C. Jia, and W. Wu, “An intense ultraviolet photoluminescence in sol-gel ZnO-SiO2 nanocomposites,” J. Phys. Condens. Matter 15(17), 2867–2873 (2003).
[CrossRef]

Lin, H. Y.

Liu, C.

Ü. Özgür, Y. I. Alivov, C. Liu, A. Teke, M. A. Reshchikov, S. Doğan, V. Avrutin, S.-J. Cho, and H. Morkoç, “A comprehensive review of ZnO materials and devices,” J. Appl. Phys. 98(4), 041301 (2005).
[CrossRef]

Liu, J.

J. V. Foreman, J. Li, H. Peng, S. Choi, H. O. Everitt, and J. Liu, “Time-resolved investigation of bright visible wavelength luminescence from sulfur-doped ZnO nanowires and micropowders,” Nano Lett. 6(6), 1126–1130 (2006).
[CrossRef]

Ma, X.

P. Chen, X. Ma, D. Li, Y. Zhang, and D. Yang, “Electrically pumped ultraviolet random lasing from ZnO-based metal-insulator-semiconductor devices: dependence on carrier transport,” Opt. Express 17(6), 4712–4717 (2009).
[CrossRef]

B. Chen, H. Zhang, N. Du, D. Li, X. Ma, and D. Yang, “Hybrid nanostructures of Au nanocrystals and ZnO nanorods: Layer-by-layer assembly and tunable blue-shift band gap emission,” Mater. Res. Bull. 44(4), 889–892 (2009).
[CrossRef]

X. Ma, P. Chen, D. Li, Y. Zhang, and D. Yang, “Electrophotoluminescence of ZnO film,” Appl. Phys. Lett. 91(2), 021105 (2007).
[CrossRef]

Missert, N. A.

J. W. P. Hsu, D. R. Tallant, R. L. Simpson, N. A. Missert, and R. G. Copeland, “Luminescent properties of solution-grown ZnO nanorods,” Appl. Phys. Lett. 88(25), 252103 (2006).
[CrossRef]

Morkoç, H.

Ü. Özgür, Y. I. Alivov, C. Liu, A. Teke, M. A. Reshchikov, S. Doğan, V. Avrutin, S.-J. Cho, and H. Morkoç, “A comprehensive review of ZnO materials and devices,” J. Appl. Phys. 98(4), 041301 (2005).
[CrossRef]

Niki, S.

K. Kim, H. Tampo, J. Song, T. Seong, S. Park, J. Lee, S. Kim, S. Fujita, and S. Niki, “Effect of rapid thermal annealing on Al doped n-ZnO films grown by RF-magnetron sputtering,” Jpn. J. Appl. Phys. 44(No. 7A), 4776–4779 (2005).
[CrossRef]

Norton, D. P.

S. J. Pearton, D. P. Norton, K. Ip, Y. W. Heo, and T. Steiner, “Recent progress in processing and properties of ZnO,” Prog. Mater. Sci. 50(3), 293–340 (2005).
[CrossRef]

Oh Kim, C.

S. Kim, C. Oh Kim, H. Taek Oh, and S.-H. Choi, “Strong enhancement of near-band-edge photoluminescence from ZnO by assembling ZnO/SiOx heterostructures,” J. Phys. D Appl. Phys. 41(23), 235403 (2008).
[CrossRef]

Ong, H. C.

K. C. Hui, J. An, X. Y. Zhang, J. B. Xu, J. Y. Dai, and H. C. Ong, “Electron beam induced light emission and charge conduction patterning in ZnO by using an AlOx Layer,” Adv. Mater. 17(16), 1960–1964 (2005).
[CrossRef]

Özgür, Ü.

Ü. Özgür, Y. I. Alivov, C. Liu, A. Teke, M. A. Reshchikov, S. Doğan, V. Avrutin, S.-J. Cho, and H. Morkoç, “A comprehensive review of ZnO materials and devices,” J. Appl. Phys. 98(4), 041301 (2005).
[CrossRef]

Park, S.

K. Kim, H. Tampo, J. Song, T. Seong, S. Park, J. Lee, S. Kim, S. Fujita, and S. Niki, “Effect of rapid thermal annealing on Al doped n-ZnO films grown by RF-magnetron sputtering,” Jpn. J. Appl. Phys. 44(No. 7A), 4776–4779 (2005).
[CrossRef]

Pearton, S. J.

S. J. Pearton, D. P. Norton, K. Ip, Y. W. Heo, and T. Steiner, “Recent progress in processing and properties of ZnO,” Prog. Mater. Sci. 50(3), 293–340 (2005).
[CrossRef]

Peng, H.

J. V. Foreman, J. Li, H. Peng, S. Choi, H. O. Everitt, and J. Liu, “Time-resolved investigation of bright visible wavelength luminescence from sulfur-doped ZnO nanowires and micropowders,” Nano Lett. 6(6), 1126–1130 (2006).
[CrossRef]

Phillips, M. R.

V. A. Coleman, J. E. Bradby, C. Jagadish, and M. R. Phillips, “Observation of enhanced defect emission and excitonic quenching from spherically indented ZnO,” Appl. Phys. Lett. 89(8), 082102 (2006).
[CrossRef]

Reshchikov, M. A.

Ü. Özgür, Y. I. Alivov, C. Liu, A. Teke, M. A. Reshchikov, S. Doğan, V. Avrutin, S.-J. Cho, and H. Morkoç, “A comprehensive review of ZnO materials and devices,” J. Appl. Phys. 98(4), 041301 (2005).
[CrossRef]

Seong, T.

K. Kim, H. Tampo, J. Song, T. Seong, S. Park, J. Lee, S. Kim, S. Fujita, and S. Niki, “Effect of rapid thermal annealing on Al doped n-ZnO films grown by RF-magnetron sputtering,” Jpn. J. Appl. Phys. 44(No. 7A), 4776–4779 (2005).
[CrossRef]

Simpson, R. L.

J. W. P. Hsu, D. R. Tallant, R. L. Simpson, N. A. Missert, and R. G. Copeland, “Luminescent properties of solution-grown ZnO nanorods,” Appl. Phys. Lett. 88(25), 252103 (2006).
[CrossRef]

Song, J.

K. Kim, H. Tampo, J. Song, T. Seong, S. Park, J. Lee, S. Kim, S. Fujita, and S. Niki, “Effect of rapid thermal annealing on Al doped n-ZnO films grown by RF-magnetron sputtering,” Jpn. J. Appl. Phys. 44(No. 7A), 4776–4779 (2005).
[CrossRef]

Steiner, T.

S. J. Pearton, D. P. Norton, K. Ip, Y. W. Heo, and T. Steiner, “Recent progress in processing and properties of ZnO,” Prog. Mater. Sci. 50(3), 293–340 (2005).
[CrossRef]

Sun, D.

S. Gao, H. Zhang, R. Deng, X. Wang, D. Sun, and G. Zheng, “Engineering white light-emitting Eu-doped ZnO urchins by biopolymer-assisted hydrothermal method,” Appl. Phys. Lett. 89(12), 123125 (2006).
[CrossRef]

Taek Oh, H.

S. Kim, C. Oh Kim, H. Taek Oh, and S.-H. Choi, “Strong enhancement of near-band-edge photoluminescence from ZnO by assembling ZnO/SiOx heterostructures,” J. Phys. D Appl. Phys. 41(23), 235403 (2008).
[CrossRef]

Tallant, D. R.

J. W. P. Hsu, D. R. Tallant, R. L. Simpson, N. A. Missert, and R. G. Copeland, “Luminescent properties of solution-grown ZnO nanorods,” Appl. Phys. Lett. 88(25), 252103 (2006).
[CrossRef]

Tampo, H.

K. Kim, H. Tampo, J. Song, T. Seong, S. Park, J. Lee, S. Kim, S. Fujita, and S. Niki, “Effect of rapid thermal annealing on Al doped n-ZnO films grown by RF-magnetron sputtering,” Jpn. J. Appl. Phys. 44(No. 7A), 4776–4779 (2005).
[CrossRef]

Teke, A.

Ü. Özgür, Y. I. Alivov, C. Liu, A. Teke, M. A. Reshchikov, S. Doğan, V. Avrutin, S.-J. Cho, and H. Morkoç, “A comprehensive review of ZnO materials and devices,” J. Appl. Phys. 98(4), 041301 (2005).
[CrossRef]

Tsen, K. T.

Wang, X.

S. Gao, H. Zhang, R. Deng, X. Wang, D. Sun, and G. Zheng, “Engineering white light-emitting Eu-doped ZnO urchins by biopolymer-assisted hydrothermal method,” Appl. Phys. Lett. 89(12), 123125 (2006).
[CrossRef]

Wu, W.

Z. Fu, B. Yang, L. Li, W. Dong, C. Jia, and W. Wu, “An intense ultraviolet photoluminescence in sol-gel ZnO-SiO2 nanocomposites,” J. Phys. Condens. Matter 15(17), 2867–2873 (2003).
[CrossRef]

Xu, J. B.

K. C. Hui, J. An, X. Y. Zhang, J. B. Xu, J. Y. Dai, and H. C. Ong, “Electron beam induced light emission and charge conduction patterning in ZnO by using an AlOx Layer,” Adv. Mater. 17(16), 1960–1964 (2005).
[CrossRef]

Yang, B.

Z. Fu, B. Yang, L. Li, W. Dong, C. Jia, and W. Wu, “An intense ultraviolet photoluminescence in sol-gel ZnO-SiO2 nanocomposites,” J. Phys. Condens. Matter 15(17), 2867–2873 (2003).
[CrossRef]

Yang, D.

P. Chen, X. Ma, D. Li, Y. Zhang, and D. Yang, “Electrically pumped ultraviolet random lasing from ZnO-based metal-insulator-semiconductor devices: dependence on carrier transport,” Opt. Express 17(6), 4712–4717 (2009).
[CrossRef]

B. Chen, H. Zhang, N. Du, D. Li, X. Ma, and D. Yang, “Hybrid nanostructures of Au nanocrystals and ZnO nanorods: Layer-by-layer assembly and tunable blue-shift band gap emission,” Mater. Res. Bull. 44(4), 889–892 (2009).
[CrossRef]

P. Cheng, D. Li, Z. Yuan, P. Chen, and D. Yang, “Enhancement of ZnO light emission via coupling with localized surface plasmon of Ag island film,” Appl. Phys. Lett. 92(4), 041119 (2008).
[CrossRef]

P. Cheng, D. Li, and D. Yang, “Influence of substrates in ZnO devices on the surface plasmon enhanced light emission,” Opt. Express 16(12), 8896–8901 (2008).
[CrossRef]

X. Ma, P. Chen, D. Li, Y. Zhang, and D. Yang, “Electrophotoluminescence of ZnO film,” Appl. Phys. Lett. 91(2), 021105 (2007).
[CrossRef]

Yuan, Z.

P. Cheng, D. Li, Z. Yuan, P. Chen, and D. Yang, “Enhancement of ZnO light emission via coupling with localized surface plasmon of Ag island film,” Appl. Phys. Lett. 92(4), 041119 (2008).
[CrossRef]

Zhang, H.

B. Chen, H. Zhang, N. Du, D. Li, X. Ma, and D. Yang, “Hybrid nanostructures of Au nanocrystals and ZnO nanorods: Layer-by-layer assembly and tunable blue-shift band gap emission,” Mater. Res. Bull. 44(4), 889–892 (2009).
[CrossRef]

S. Gao, H. Zhang, R. Deng, X. Wang, D. Sun, and G. Zheng, “Engineering white light-emitting Eu-doped ZnO urchins by biopolymer-assisted hydrothermal method,” Appl. Phys. Lett. 89(12), 123125 (2006).
[CrossRef]

Zhang, X. Y.

K. C. Hui, J. An, X. Y. Zhang, J. B. Xu, J. Y. Dai, and H. C. Ong, “Electron beam induced light emission and charge conduction patterning in ZnO by using an AlOx Layer,” Adv. Mater. 17(16), 1960–1964 (2005).
[CrossRef]

Zhang, Y.

Zheng, G.

S. Gao, H. Zhang, R. Deng, X. Wang, D. Sun, and G. Zheng, “Engineering white light-emitting Eu-doped ZnO urchins by biopolymer-assisted hydrothermal method,” Appl. Phys. Lett. 89(12), 123125 (2006).
[CrossRef]

Adv. Mater. (1)

K. C. Hui, J. An, X. Y. Zhang, J. B. Xu, J. Y. Dai, and H. C. Ong, “Electron beam induced light emission and charge conduction patterning in ZnO by using an AlOx Layer,” Adv. Mater. 17(16), 1960–1964 (2005).
[CrossRef]

Appl. Phys. Lett. (5)

S. Gao, H. Zhang, R. Deng, X. Wang, D. Sun, and G. Zheng, “Engineering white light-emitting Eu-doped ZnO urchins by biopolymer-assisted hydrothermal method,” Appl. Phys. Lett. 89(12), 123125 (2006).
[CrossRef]

J. W. P. Hsu, D. R. Tallant, R. L. Simpson, N. A. Missert, and R. G. Copeland, “Luminescent properties of solution-grown ZnO nanorods,” Appl. Phys. Lett. 88(25), 252103 (2006).
[CrossRef]

P. Cheng, D. Li, Z. Yuan, P. Chen, and D. Yang, “Enhancement of ZnO light emission via coupling with localized surface plasmon of Ag island film,” Appl. Phys. Lett. 92(4), 041119 (2008).
[CrossRef]

V. A. Coleman, J. E. Bradby, C. Jagadish, and M. R. Phillips, “Observation of enhanced defect emission and excitonic quenching from spherically indented ZnO,” Appl. Phys. Lett. 89(8), 082102 (2006).
[CrossRef]

X. Ma, P. Chen, D. Li, Y. Zhang, and D. Yang, “Electrophotoluminescence of ZnO film,” Appl. Phys. Lett. 91(2), 021105 (2007).
[CrossRef]

J. Appl. Phys. (1)

Ü. Özgür, Y. I. Alivov, C. Liu, A. Teke, M. A. Reshchikov, S. Doğan, V. Avrutin, S.-J. Cho, and H. Morkoç, “A comprehensive review of ZnO materials and devices,” J. Appl. Phys. 98(4), 041301 (2005).
[CrossRef]

J. Phys. Condens. Matter (1)

Z. Fu, B. Yang, L. Li, W. Dong, C. Jia, and W. Wu, “An intense ultraviolet photoluminescence in sol-gel ZnO-SiO2 nanocomposites,” J. Phys. Condens. Matter 15(17), 2867–2873 (2003).
[CrossRef]

J. Phys. D Appl. Phys. (1)

S. Kim, C. Oh Kim, H. Taek Oh, and S.-H. Choi, “Strong enhancement of near-band-edge photoluminescence from ZnO by assembling ZnO/SiOx heterostructures,” J. Phys. D Appl. Phys. 41(23), 235403 (2008).
[CrossRef]

Jpn. J. Appl. Phys. (1)

K. Kim, H. Tampo, J. Song, T. Seong, S. Park, J. Lee, S. Kim, S. Fujita, and S. Niki, “Effect of rapid thermal annealing on Al doped n-ZnO films grown by RF-magnetron sputtering,” Jpn. J. Appl. Phys. 44(No. 7A), 4776–4779 (2005).
[CrossRef]

Mater. Res. Bull. (1)

B. Chen, H. Zhang, N. Du, D. Li, X. Ma, and D. Yang, “Hybrid nanostructures of Au nanocrystals and ZnO nanorods: Layer-by-layer assembly and tunable blue-shift band gap emission,” Mater. Res. Bull. 44(4), 889–892 (2009).
[CrossRef]

Nano Lett. (1)

J. V. Foreman, J. Li, H. Peng, S. Choi, H. O. Everitt, and J. Liu, “Time-resolved investigation of bright visible wavelength luminescence from sulfur-doped ZnO nanowires and micropowders,” Nano Lett. 6(6), 1126–1130 (2006).
[CrossRef]

Opt. Express (3)

Prog. Mater. Sci. (1)

S. J. Pearton, D. P. Norton, K. Ip, Y. W. Heo, and T. Steiner, “Recent progress in processing and properties of ZnO,” Prog. Mater. Sci. 50(3), 293–340 (2005).
[CrossRef]

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Figures (6)

Fig. 1.
Fig. 1.

XRD pattern of the sol-gel derived ZnO film on Si annealed at 800 °C. The inset shows the FESEM image of the surface morphology of the sol-gel derived ZnO film.

Fig. 2.
Fig. 2.

Forward IV characteristic of the device based on SiO2/ZnO/SiO x DB structure.

Fig. 3.
Fig. 3.

(a) PL spectra of the sol-gel derived ZnO film as the device is applied with different forward biases of 0 and 12.0 V. The inset shows the schematic diagram of the device under test. (b) PL spectra of the sol-gel derived ZnO film as the device applied with a forward bias of 12.0 V is illuminated by a He-Cd laser or not.

Fig. 4.
Fig. 4.

PL spectra in 360–400 nm of the sol-gel derived ZnO film in the (a) normal and (b) NDR regions.

Fig. 5.
Fig. 5.

Dependences of spectrally integrated intensity (red solid squares) and peak position (blue hollow circles) of the NBE PL of ZnO flim on the forward bias voltage.

Fig. 6.
Fig. 6.

Energy band diagrams of the device and carrier distribution in ZnO film in the (a) normal and (b) NDR regions.

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