Abstract

We have demonstrated an efficient high-peak-power AlGaInAs eye-safe wavelength disk laser at 1555 nm. The quantum defect and the thermal load are significantly reduced by pumping the quantum well directly. The overall conversion efficiency is enhanced over three times compared with the barrier pumping method. With a pump peak power of 3.7 kW, an output peak power of 0.52 kW is generated at a pulse repetition rate of 20 kHz.

© 2009 OSA

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  1. S. M. Spuler and S. D. Mayor, “Raman shifter optimized for lidar at a 1.5 microm wavelength,” Appl. Opt. 46(15), 2990–2995 (2007).
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  5. I. Sokólska, E. Heumann, S. Kück, and T. Łukasiewicz, “Laser oscillation of Er3+:YVO4 and Er3+, Yb3+:YVO4 crystals in the spectral range around 1.6 µm,” Appl. Phys. B 71, 893–896 (2000).
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    [CrossRef]
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    [CrossRef]
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    [CrossRef]
  11. Y. F. Chen, S. W. Chen, Y. C. Chen, Y. P. Lan, and S. W. Tsai, “Compact efficient intracavity optical parametric oscillator with a passively Q-switched Nd:YVO4/Cr4+:YAG laser in a hemispherical cavity,” Appl. Phys. B 77(5), 493–495 (2003).
    [CrossRef]
  12. Y. F. Chen and L. Y. Tsai, “Comparison between shared and coupled resonators for passively Q-switched Nd:GdVO4 intracavity optical parametric oscillators,” Appl. Phys. B 82(3), 403–406 (2006).
    [CrossRef]
  13. C. E. Zah, R. Bhat, B. N. Pathak, F. Favire, W. Lin, M. C. Wang, N. C. Andreadakis, D. M. Hwang, M. A. Koza, T. P. Lee, Z. Wang, D. Darby, D. Flanders, and J. J. Heieh, “High-performance uncooled 1.3-m Al Ga In As/InP strained-layer quantum-well lasers for subscriberloop applications,” IEEE J. Quantum Electron. 30(2), 511–521 (1994).
  14. J. Minch, S. H. Park, J. Minch, and S. L. Chuang, “Theory and Experiment of InGaAsP and InGaAlAs long-wavelength strained quantum-well lasers,” IEEE J. Quantum Electron. 35, 771–782 (1999).
    [CrossRef]
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  16. N. Nishiyama, C. Caneau, B. Hall, G. Guryanov, M. Hu, X. Liu, M. J. Li, R. Bhat, and C. E. Zah, “Long-wavelength vertical-cavity surface-emitting lasers on InP with lattice matched AlGaInAs-InP DBR grown by MOCVD,” IEEE J. Sel. Top. Quantum Electron. 11(5), 990–998 (2005).
  17. N. J. M. Hopkins, A. J. Kemp, N. Schulz, M. Rattunde, J. Wagner, M. D. Dawson, and D. Burns, “Pulsed pumping of semiconductor disk lasers,” Opt. Express 3, 3247–3256 (2007).
  18. S. Calvez, N. Laurand, H. D. Sun, J. Weda, D. Burns, M. D. Dawson, A. Harkonen, T. Jouhti, M. Pessa, M. Hopkinson, D. Poitras, J. A. Gupta, C. G. Leburn, C. T. A. Brown, and W. Sibbett, “GaInNAs(Sb) surface normal devices,” Phys. Status Solidi 205(1), 85–92 (2008).
  19. S. C. Huang, H. L. Chang, K. W. Su, A. Li, S. C. Liu, Y. F. Chen, and K. F. Huang, “AlGaInAs/InP eye-safe laser pumped by a Q-switched Nd:GdVO4 laser,” Appl. Phys. B 94(3), 483–487 (2009).
    [CrossRef]
  20. M. Schmid, S. Benchabane, F. Torabi-Goudarzi, R. Abram, A. I. Ferguson, and E. Riis, “Optical in-well pumping of a vertical-external-cavity surface-emitting laser,” Appl. Phys. Lett. 84(24), 4860–4862 (2004).
    [CrossRef]
  21. J. Wagner, N. Schulz, M. Rattunde, C. Ritzenthaler, C. Manz, C. Wild, and K. Köhler, “Barrier- and in-well pumped GaSb-based 2.3 μm VECSELs,” Phys. Status Solidi 4(5), 1594–1600 (2007).
  22. J. J. Zayhowski and A. Mooradian, “Single-frequency microchip Nd lasers,” Opt. Lett. 14(1), 24–26 (1989).
    [CrossRef]
  23. G. J. Dixon, L. S. Lingvay, and R. H. Jarman, “Properties of close coupled monolithic, lithium neodymium, tetraphosphate lasers,” Proc. SPIE 1104, 107 (1989).

2009 (1)

S. C. Huang, H. L. Chang, K. W. Su, A. Li, S. C. Liu, Y. F. Chen, and K. F. Huang, “AlGaInAs/InP eye-safe laser pumped by a Q-switched Nd:GdVO4 laser,” Appl. Phys. B 94(3), 483–487 (2009).
[CrossRef]

2008 (2)

H. T. Huang, J. L. He, X. L. Dong, C. H. Zuo, B. T. Zhang, G. Qiu, and Z. K. Liu, “High-repetition-rate eye-safe intracavity KTA OPO driven by a diode-end-pumped Q-switched Nd:YVO4 laser,” Appl. Phys. B 90(1), 43–45 (2008).
[CrossRef]

S. Calvez, N. Laurand, H. D. Sun, J. Weda, D. Burns, M. D. Dawson, A. Harkonen, T. Jouhti, M. Pessa, M. Hopkinson, D. Poitras, J. A. Gupta, C. G. Leburn, C. T. A. Brown, and W. Sibbett, “GaInNAs(Sb) surface normal devices,” Phys. Status Solidi 205(1), 85–92 (2008).

2007 (4)

N. J. M. Hopkins, A. J. Kemp, N. Schulz, M. Rattunde, J. Wagner, M. D. Dawson, and D. Burns, “Pulsed pumping of semiconductor disk lasers,” Opt. Express 3, 3247–3256 (2007).

H. Jianhong, L. Jipeng, S. Rongbing, L. Jinghui, Z. Hui, X. Canhua, S. Fei, L. Zongzhi, Z. Jian, Z. Wenrong, and L. Wenxiong, “Short pulse eye-safe laser with a stimulated Raman scattering self-conversion based on a Nd:KGW crystal,” Opt. Lett. 32(9), 1096–1098 (2007).

S. M. Spuler and S. D. Mayor, “Raman shifter optimized for lidar at a 1.5 microm wavelength,” Appl. Opt. 46(15), 2990–2995 (2007).
[CrossRef]

J. Wagner, N. Schulz, M. Rattunde, C. Ritzenthaler, C. Manz, C. Wild, and K. Köhler, “Barrier- and in-well pumped GaSb-based 2.3 μm VECSELs,” Phys. Status Solidi 4(5), 1594–1600 (2007).

2006 (3)

F. F. Su, X. Y. Zhang, Q. P. Wang, S. H. Ding, P. Jia, S. T. Li, S. Z. Fan, C. Zhang, and B. Liu, “Diode pumped actively Q-switched Nd:YVO4 self-Raman laser,” J. Phys. D Appl. Phys. 39(10), 2090–2093 (2006).
[CrossRef]

S. H. Ding, X. Y. Zhang, Q. P. Wang, F. F. Su, P. Jia, S. T. Li, S. Z. Fan, J. Chang, S. S. Zhang, and Z. J. Liu, “Theoretical and experimental study on the self-Raman laser with Nd:YVO4 crystal,” IEEE J. Quantum Electron. 42(9), 927–933 (2006).
[CrossRef]

Y. F. Chen and L. Y. Tsai, “Comparison between shared and coupled resonators for passively Q-switched Nd:GdVO4 intracavity optical parametric oscillators,” Appl. Phys. B 82(3), 403–406 (2006).
[CrossRef]

2005 (1)

N. Nishiyama, C. Caneau, B. Hall, G. Guryanov, M. Hu, X. Liu, M. J. Li, R. Bhat, and C. E. Zah, “Long-wavelength vertical-cavity surface-emitting lasers on InP with lattice matched AlGaInAs-InP DBR grown by MOCVD,” IEEE J. Sel. Top. Quantum Electron. 11(5), 990–998 (2005).

2004 (1)

M. Schmid, S. Benchabane, F. Torabi-Goudarzi, R. Abram, A. I. Ferguson, and E. Riis, “Optical in-well pumping of a vertical-external-cavity surface-emitting laser,” Appl. Phys. Lett. 84(24), 4860–4862 (2004).
[CrossRef]

2003 (1)

Y. F. Chen, S. W. Chen, Y. C. Chen, Y. P. Lan, and S. W. Tsai, “Compact efficient intracavity optical parametric oscillator with a passively Q-switched Nd:YVO4/Cr4+:YAG laser in a hemispherical cavity,” Appl. Phys. B 77(5), 493–495 (2003).
[CrossRef]

2002 (1)

S. R. Šelmić, G. A. Evans, T. M. Chou, J. B. Kirk, J. N. Walpole, J. P. Donnelly, C. T. Harris, and L. J. Missaggia, “Single frequency 1550-nm AlGaInAs-InP tapered high-power laser with a distributed Bragg reflector,” IEEE Photon. Technol. Lett. 14(7), 890–892 (2002).

2000 (1)

I. Sokólska, E. Heumann, S. Kück, and T. Łukasiewicz, “Laser oscillation of Er3+:YVO4 and Er3+, Yb3+:YVO4 crystals in the spectral range around 1.6 µm,” Appl. Phys. B 71, 893–896 (2000).

1999 (1)

J. Minch, S. H. Park, J. Minch, and S. L. Chuang, “Theory and Experiment of InGaAsP and InGaAlAs long-wavelength strained quantum-well lasers,” IEEE J. Quantum Electron. 35, 771–782 (1999).
[CrossRef]

1998 (1)

1996 (1)

S. Taccheo, P. Laporta, S. Longhi, O. Svelto, and C. Svelto, “Diode-pumped bulk erbium–ytterbium lasers,” Appl. Phys. B 63, 425–436 (1996).

1995 (1)

S. Kück, K. Petermann, U. Pohlmann, and G. Huber, “Near-infrared emission of Cr4+-doped garnets: Lifetimes, quantum efficiencies, and emission cross sections,” Phys. Rev. B 51(24), 17323–17331 (1995).
[CrossRef]

1994 (1)

C. E. Zah, R. Bhat, B. N. Pathak, F. Favire, W. Lin, M. C. Wang, N. C. Andreadakis, D. M. Hwang, M. A. Koza, T. P. Lee, Z. Wang, D. Darby, D. Flanders, and J. J. Heieh, “High-performance uncooled 1.3-m Al Ga In As/InP strained-layer quantum-well lasers for subscriberloop applications,” IEEE J. Quantum Electron. 30(2), 511–521 (1994).

1989 (2)

J. J. Zayhowski and A. Mooradian, “Single-frequency microchip Nd lasers,” Opt. Lett. 14(1), 24–26 (1989).
[CrossRef]

G. J. Dixon, L. S. Lingvay, and R. H. Jarman, “Properties of close coupled monolithic, lithium neodymium, tetraphosphate lasers,” Proc. SPIE 1104, 107 (1989).

Abram, R.

M. Schmid, S. Benchabane, F. Torabi-Goudarzi, R. Abram, A. I. Ferguson, and E. Riis, “Optical in-well pumping of a vertical-external-cavity surface-emitting laser,” Appl. Phys. Lett. 84(24), 4860–4862 (2004).
[CrossRef]

Andreadakis, N. C.

C. E. Zah, R. Bhat, B. N. Pathak, F. Favire, W. Lin, M. C. Wang, N. C. Andreadakis, D. M. Hwang, M. A. Koza, T. P. Lee, Z. Wang, D. Darby, D. Flanders, and J. J. Heieh, “High-performance uncooled 1.3-m Al Ga In As/InP strained-layer quantum-well lasers for subscriberloop applications,” IEEE J. Quantum Electron. 30(2), 511–521 (1994).

Benchabane, S.

M. Schmid, S. Benchabane, F. Torabi-Goudarzi, R. Abram, A. I. Ferguson, and E. Riis, “Optical in-well pumping of a vertical-external-cavity surface-emitting laser,” Appl. Phys. Lett. 84(24), 4860–4862 (2004).
[CrossRef]

Bhat, R.

N. Nishiyama, C. Caneau, B. Hall, G. Guryanov, M. Hu, X. Liu, M. J. Li, R. Bhat, and C. E. Zah, “Long-wavelength vertical-cavity surface-emitting lasers on InP with lattice matched AlGaInAs-InP DBR grown by MOCVD,” IEEE J. Sel. Top. Quantum Electron. 11(5), 990–998 (2005).

C. E. Zah, R. Bhat, B. N. Pathak, F. Favire, W. Lin, M. C. Wang, N. C. Andreadakis, D. M. Hwang, M. A. Koza, T. P. Lee, Z. Wang, D. Darby, D. Flanders, and J. J. Heieh, “High-performance uncooled 1.3-m Al Ga In As/InP strained-layer quantum-well lasers for subscriberloop applications,” IEEE J. Quantum Electron. 30(2), 511–521 (1994).

Brown, C. T. A.

S. Calvez, N. Laurand, H. D. Sun, J. Weda, D. Burns, M. D. Dawson, A. Harkonen, T. Jouhti, M. Pessa, M. Hopkinson, D. Poitras, J. A. Gupta, C. G. Leburn, C. T. A. Brown, and W. Sibbett, “GaInNAs(Sb) surface normal devices,” Phys. Status Solidi 205(1), 85–92 (2008).

Burns, D.

S. Calvez, N. Laurand, H. D. Sun, J. Weda, D. Burns, M. D. Dawson, A. Harkonen, T. Jouhti, M. Pessa, M. Hopkinson, D. Poitras, J. A. Gupta, C. G. Leburn, C. T. A. Brown, and W. Sibbett, “GaInNAs(Sb) surface normal devices,” Phys. Status Solidi 205(1), 85–92 (2008).

N. J. M. Hopkins, A. J. Kemp, N. Schulz, M. Rattunde, J. Wagner, M. D. Dawson, and D. Burns, “Pulsed pumping of semiconductor disk lasers,” Opt. Express 3, 3247–3256 (2007).

Calvez, S.

S. Calvez, N. Laurand, H. D. Sun, J. Weda, D. Burns, M. D. Dawson, A. Harkonen, T. Jouhti, M. Pessa, M. Hopkinson, D. Poitras, J. A. Gupta, C. G. Leburn, C. T. A. Brown, and W. Sibbett, “GaInNAs(Sb) surface normal devices,” Phys. Status Solidi 205(1), 85–92 (2008).

Caneau, C.

N. Nishiyama, C. Caneau, B. Hall, G. Guryanov, M. Hu, X. Liu, M. J. Li, R. Bhat, and C. E. Zah, “Long-wavelength vertical-cavity surface-emitting lasers on InP with lattice matched AlGaInAs-InP DBR grown by MOCVD,” IEEE J. Sel. Top. Quantum Electron. 11(5), 990–998 (2005).

Canhua, X.

Chang, H. L.

S. C. Huang, H. L. Chang, K. W. Su, A. Li, S. C. Liu, Y. F. Chen, and K. F. Huang, “AlGaInAs/InP eye-safe laser pumped by a Q-switched Nd:GdVO4 laser,” Appl. Phys. B 94(3), 483–487 (2009).
[CrossRef]

Chang, J.

S. H. Ding, X. Y. Zhang, Q. P. Wang, F. F. Su, P. Jia, S. T. Li, S. Z. Fan, J. Chang, S. S. Zhang, and Z. J. Liu, “Theoretical and experimental study on the self-Raman laser with Nd:YVO4 crystal,” IEEE J. Quantum Electron. 42(9), 927–933 (2006).
[CrossRef]

Chen, S. W.

Y. F. Chen, S. W. Chen, Y. C. Chen, Y. P. Lan, and S. W. Tsai, “Compact efficient intracavity optical parametric oscillator with a passively Q-switched Nd:YVO4/Cr4+:YAG laser in a hemispherical cavity,” Appl. Phys. B 77(5), 493–495 (2003).
[CrossRef]

Chen, Y. C.

Y. F. Chen, S. W. Chen, Y. C. Chen, Y. P. Lan, and S. W. Tsai, “Compact efficient intracavity optical parametric oscillator with a passively Q-switched Nd:YVO4/Cr4+:YAG laser in a hemispherical cavity,” Appl. Phys. B 77(5), 493–495 (2003).
[CrossRef]

Chen, Y. F.

S. C. Huang, H. L. Chang, K. W. Su, A. Li, S. C. Liu, Y. F. Chen, and K. F. Huang, “AlGaInAs/InP eye-safe laser pumped by a Q-switched Nd:GdVO4 laser,” Appl. Phys. B 94(3), 483–487 (2009).
[CrossRef]

Y. F. Chen and L. Y. Tsai, “Comparison between shared and coupled resonators for passively Q-switched Nd:GdVO4 intracavity optical parametric oscillators,” Appl. Phys. B 82(3), 403–406 (2006).
[CrossRef]

Y. F. Chen, S. W. Chen, Y. C. Chen, Y. P. Lan, and S. W. Tsai, “Compact efficient intracavity optical parametric oscillator with a passively Q-switched Nd:YVO4/Cr4+:YAG laser in a hemispherical cavity,” Appl. Phys. B 77(5), 493–495 (2003).
[CrossRef]

Chou, T. M.

S. R. Šelmić, G. A. Evans, T. M. Chou, J. B. Kirk, J. N. Walpole, J. P. Donnelly, C. T. Harris, and L. J. Missaggia, “Single frequency 1550-nm AlGaInAs-InP tapered high-power laser with a distributed Bragg reflector,” IEEE Photon. Technol. Lett. 14(7), 890–892 (2002).

Chuang, S. L.

J. Minch, S. H. Park, J. Minch, and S. L. Chuang, “Theory and Experiment of InGaAsP and InGaAlAs long-wavelength strained quantum-well lasers,” IEEE J. Quantum Electron. 35, 771–782 (1999).
[CrossRef]

Darby, D.

C. E. Zah, R. Bhat, B. N. Pathak, F. Favire, W. Lin, M. C. Wang, N. C. Andreadakis, D. M. Hwang, M. A. Koza, T. P. Lee, Z. Wang, D. Darby, D. Flanders, and J. J. Heieh, “High-performance uncooled 1.3-m Al Ga In As/InP strained-layer quantum-well lasers for subscriberloop applications,” IEEE J. Quantum Electron. 30(2), 511–521 (1994).

Dawson, M. D.

S. Calvez, N. Laurand, H. D. Sun, J. Weda, D. Burns, M. D. Dawson, A. Harkonen, T. Jouhti, M. Pessa, M. Hopkinson, D. Poitras, J. A. Gupta, C. G. Leburn, C. T. A. Brown, and W. Sibbett, “GaInNAs(Sb) surface normal devices,” Phys. Status Solidi 205(1), 85–92 (2008).

N. J. M. Hopkins, A. J. Kemp, N. Schulz, M. Rattunde, J. Wagner, M. D. Dawson, and D. Burns, “Pulsed pumping of semiconductor disk lasers,” Opt. Express 3, 3247–3256 (2007).

Ding, S. H.

F. F. Su, X. Y. Zhang, Q. P. Wang, S. H. Ding, P. Jia, S. T. Li, S. Z. Fan, C. Zhang, and B. Liu, “Diode pumped actively Q-switched Nd:YVO4 self-Raman laser,” J. Phys. D Appl. Phys. 39(10), 2090–2093 (2006).
[CrossRef]

S. H. Ding, X. Y. Zhang, Q. P. Wang, F. F. Su, P. Jia, S. T. Li, S. Z. Fan, J. Chang, S. S. Zhang, and Z. J. Liu, “Theoretical and experimental study on the self-Raman laser with Nd:YVO4 crystal,” IEEE J. Quantum Electron. 42(9), 927–933 (2006).
[CrossRef]

Dixon, G. J.

G. J. Dixon, L. S. Lingvay, and R. H. Jarman, “Properties of close coupled monolithic, lithium neodymium, tetraphosphate lasers,” Proc. SPIE 1104, 107 (1989).

Dong, X. L.

H. T. Huang, J. L. He, X. L. Dong, C. H. Zuo, B. T. Zhang, G. Qiu, and Z. K. Liu, “High-repetition-rate eye-safe intracavity KTA OPO driven by a diode-end-pumped Q-switched Nd:YVO4 laser,” Appl. Phys. B 90(1), 43–45 (2008).
[CrossRef]

Donnelly, J. P.

S. R. Šelmić, G. A. Evans, T. M. Chou, J. B. Kirk, J. N. Walpole, J. P. Donnelly, C. T. Harris, and L. J. Missaggia, “Single frequency 1550-nm AlGaInAs-InP tapered high-power laser with a distributed Bragg reflector,” IEEE Photon. Technol. Lett. 14(7), 890–892 (2002).

Evans, G. A.

S. R. Šelmić, G. A. Evans, T. M. Chou, J. B. Kirk, J. N. Walpole, J. P. Donnelly, C. T. Harris, and L. J. Missaggia, “Single frequency 1550-nm AlGaInAs-InP tapered high-power laser with a distributed Bragg reflector,” IEEE Photon. Technol. Lett. 14(7), 890–892 (2002).

Fan, S. Z.

F. F. Su, X. Y. Zhang, Q. P. Wang, S. H. Ding, P. Jia, S. T. Li, S. Z. Fan, C. Zhang, and B. Liu, “Diode pumped actively Q-switched Nd:YVO4 self-Raman laser,” J. Phys. D Appl. Phys. 39(10), 2090–2093 (2006).
[CrossRef]

S. H. Ding, X. Y. Zhang, Q. P. Wang, F. F. Su, P. Jia, S. T. Li, S. Z. Fan, J. Chang, S. S. Zhang, and Z. J. Liu, “Theoretical and experimental study on the self-Raman laser with Nd:YVO4 crystal,” IEEE J. Quantum Electron. 42(9), 927–933 (2006).
[CrossRef]

Favire, F.

C. E. Zah, R. Bhat, B. N. Pathak, F. Favire, W. Lin, M. C. Wang, N. C. Andreadakis, D. M. Hwang, M. A. Koza, T. P. Lee, Z. Wang, D. Darby, D. Flanders, and J. J. Heieh, “High-performance uncooled 1.3-m Al Ga In As/InP strained-layer quantum-well lasers for subscriberloop applications,” IEEE J. Quantum Electron. 30(2), 511–521 (1994).

Fei, S.

Ferguson, A. I.

M. Schmid, S. Benchabane, F. Torabi-Goudarzi, R. Abram, A. I. Ferguson, and E. Riis, “Optical in-well pumping of a vertical-external-cavity surface-emitting laser,” Appl. Phys. Lett. 84(24), 4860–4862 (2004).
[CrossRef]

Flanders, D.

C. E. Zah, R. Bhat, B. N. Pathak, F. Favire, W. Lin, M. C. Wang, N. C. Andreadakis, D. M. Hwang, M. A. Koza, T. P. Lee, Z. Wang, D. Darby, D. Flanders, and J. J. Heieh, “High-performance uncooled 1.3-m Al Ga In As/InP strained-layer quantum-well lasers for subscriberloop applications,” IEEE J. Quantum Electron. 30(2), 511–521 (1994).

Gupta, J. A.

S. Calvez, N. Laurand, H. D. Sun, J. Weda, D. Burns, M. D. Dawson, A. Harkonen, T. Jouhti, M. Pessa, M. Hopkinson, D. Poitras, J. A. Gupta, C. G. Leburn, C. T. A. Brown, and W. Sibbett, “GaInNAs(Sb) surface normal devices,” Phys. Status Solidi 205(1), 85–92 (2008).

Guryanov, G.

N. Nishiyama, C. Caneau, B. Hall, G. Guryanov, M. Hu, X. Liu, M. J. Li, R. Bhat, and C. E. Zah, “Long-wavelength vertical-cavity surface-emitting lasers on InP with lattice matched AlGaInAs-InP DBR grown by MOCVD,” IEEE J. Sel. Top. Quantum Electron. 11(5), 990–998 (2005).

Hall, B.

N. Nishiyama, C. Caneau, B. Hall, G. Guryanov, M. Hu, X. Liu, M. J. Li, R. Bhat, and C. E. Zah, “Long-wavelength vertical-cavity surface-emitting lasers on InP with lattice matched AlGaInAs-InP DBR grown by MOCVD,” IEEE J. Sel. Top. Quantum Electron. 11(5), 990–998 (2005).

Harkonen, A.

S. Calvez, N. Laurand, H. D. Sun, J. Weda, D. Burns, M. D. Dawson, A. Harkonen, T. Jouhti, M. Pessa, M. Hopkinson, D. Poitras, J. A. Gupta, C. G. Leburn, C. T. A. Brown, and W. Sibbett, “GaInNAs(Sb) surface normal devices,” Phys. Status Solidi 205(1), 85–92 (2008).

Harris, C. T.

S. R. Šelmić, G. A. Evans, T. M. Chou, J. B. Kirk, J. N. Walpole, J. P. Donnelly, C. T. Harris, and L. J. Missaggia, “Single frequency 1550-nm AlGaInAs-InP tapered high-power laser with a distributed Bragg reflector,” IEEE Photon. Technol. Lett. 14(7), 890–892 (2002).

He, J. L.

H. T. Huang, J. L. He, X. L. Dong, C. H. Zuo, B. T. Zhang, G. Qiu, and Z. K. Liu, “High-repetition-rate eye-safe intracavity KTA OPO driven by a diode-end-pumped Q-switched Nd:YVO4 laser,” Appl. Phys. B 90(1), 43–45 (2008).
[CrossRef]

Heieh, J. J.

C. E. Zah, R. Bhat, B. N. Pathak, F. Favire, W. Lin, M. C. Wang, N. C. Andreadakis, D. M. Hwang, M. A. Koza, T. P. Lee, Z. Wang, D. Darby, D. Flanders, and J. J. Heieh, “High-performance uncooled 1.3-m Al Ga In As/InP strained-layer quantum-well lasers for subscriberloop applications,” IEEE J. Quantum Electron. 30(2), 511–521 (1994).

Heumann, E.

I. Sokólska, E. Heumann, S. Kück, and T. Łukasiewicz, “Laser oscillation of Er3+:YVO4 and Er3+, Yb3+:YVO4 crystals in the spectral range around 1.6 µm,” Appl. Phys. B 71, 893–896 (2000).

Hopkins, N. J. M.

N. J. M. Hopkins, A. J. Kemp, N. Schulz, M. Rattunde, J. Wagner, M. D. Dawson, and D. Burns, “Pulsed pumping of semiconductor disk lasers,” Opt. Express 3, 3247–3256 (2007).

Hopkinson, M.

S. Calvez, N. Laurand, H. D. Sun, J. Weda, D. Burns, M. D. Dawson, A. Harkonen, T. Jouhti, M. Pessa, M. Hopkinson, D. Poitras, J. A. Gupta, C. G. Leburn, C. T. A. Brown, and W. Sibbett, “GaInNAs(Sb) surface normal devices,” Phys. Status Solidi 205(1), 85–92 (2008).

Hu, M.

N. Nishiyama, C. Caneau, B. Hall, G. Guryanov, M. Hu, X. Liu, M. J. Li, R. Bhat, and C. E. Zah, “Long-wavelength vertical-cavity surface-emitting lasers on InP with lattice matched AlGaInAs-InP DBR grown by MOCVD,” IEEE J. Sel. Top. Quantum Electron. 11(5), 990–998 (2005).

Huang, H. T.

H. T. Huang, J. L. He, X. L. Dong, C. H. Zuo, B. T. Zhang, G. Qiu, and Z. K. Liu, “High-repetition-rate eye-safe intracavity KTA OPO driven by a diode-end-pumped Q-switched Nd:YVO4 laser,” Appl. Phys. B 90(1), 43–45 (2008).
[CrossRef]

Huang, K. F.

S. C. Huang, H. L. Chang, K. W. Su, A. Li, S. C. Liu, Y. F. Chen, and K. F. Huang, “AlGaInAs/InP eye-safe laser pumped by a Q-switched Nd:GdVO4 laser,” Appl. Phys. B 94(3), 483–487 (2009).
[CrossRef]

Huang, S. C.

S. C. Huang, H. L. Chang, K. W. Su, A. Li, S. C. Liu, Y. F. Chen, and K. F. Huang, “AlGaInAs/InP eye-safe laser pumped by a Q-switched Nd:GdVO4 laser,” Appl. Phys. B 94(3), 483–487 (2009).
[CrossRef]

Huber, G.

S. Kück, K. Petermann, U. Pohlmann, and G. Huber, “Near-infrared emission of Cr4+-doped garnets: Lifetimes, quantum efficiencies, and emission cross sections,” Phys. Rev. B 51(24), 17323–17331 (1995).
[CrossRef]

Hui, Z.

Hwang, D. M.

C. E. Zah, R. Bhat, B. N. Pathak, F. Favire, W. Lin, M. C. Wang, N. C. Andreadakis, D. M. Hwang, M. A. Koza, T. P. Lee, Z. Wang, D. Darby, D. Flanders, and J. J. Heieh, “High-performance uncooled 1.3-m Al Ga In As/InP strained-layer quantum-well lasers for subscriberloop applications,” IEEE J. Quantum Electron. 30(2), 511–521 (1994).

Jarman, R. H.

G. J. Dixon, L. S. Lingvay, and R. H. Jarman, “Properties of close coupled monolithic, lithium neodymium, tetraphosphate lasers,” Proc. SPIE 1104, 107 (1989).

Jia, P.

S. H. Ding, X. Y. Zhang, Q. P. Wang, F. F. Su, P. Jia, S. T. Li, S. Z. Fan, J. Chang, S. S. Zhang, and Z. J. Liu, “Theoretical and experimental study on the self-Raman laser with Nd:YVO4 crystal,” IEEE J. Quantum Electron. 42(9), 927–933 (2006).
[CrossRef]

F. F. Su, X. Y. Zhang, Q. P. Wang, S. H. Ding, P. Jia, S. T. Li, S. Z. Fan, C. Zhang, and B. Liu, “Diode pumped actively Q-switched Nd:YVO4 self-Raman laser,” J. Phys. D Appl. Phys. 39(10), 2090–2093 (2006).
[CrossRef]

Jian, Z.

Jianhong, H.

Jinghui, L.

Jipeng, L.

Jouhti, T.

S. Calvez, N. Laurand, H. D. Sun, J. Weda, D. Burns, M. D. Dawson, A. Harkonen, T. Jouhti, M. Pessa, M. Hopkinson, D. Poitras, J. A. Gupta, C. G. Leburn, C. T. A. Brown, and W. Sibbett, “GaInNAs(Sb) surface normal devices,” Phys. Status Solidi 205(1), 85–92 (2008).

Kemp, A. J.

N. J. M. Hopkins, A. J. Kemp, N. Schulz, M. Rattunde, J. Wagner, M. D. Dawson, and D. Burns, “Pulsed pumping of semiconductor disk lasers,” Opt. Express 3, 3247–3256 (2007).

Kirk, J. B.

S. R. Šelmić, G. A. Evans, T. M. Chou, J. B. Kirk, J. N. Walpole, J. P. Donnelly, C. T. Harris, and L. J. Missaggia, “Single frequency 1550-nm AlGaInAs-InP tapered high-power laser with a distributed Bragg reflector,” IEEE Photon. Technol. Lett. 14(7), 890–892 (2002).

Köhler, K.

J. Wagner, N. Schulz, M. Rattunde, C. Ritzenthaler, C. Manz, C. Wild, and K. Köhler, “Barrier- and in-well pumped GaSb-based 2.3 μm VECSELs,” Phys. Status Solidi 4(5), 1594–1600 (2007).

Koza, M. A.

C. E. Zah, R. Bhat, B. N. Pathak, F. Favire, W. Lin, M. C. Wang, N. C. Andreadakis, D. M. Hwang, M. A. Koza, T. P. Lee, Z. Wang, D. Darby, D. Flanders, and J. J. Heieh, “High-performance uncooled 1.3-m Al Ga In As/InP strained-layer quantum-well lasers for subscriberloop applications,” IEEE J. Quantum Electron. 30(2), 511–521 (1994).

Kück, S.

I. Sokólska, E. Heumann, S. Kück, and T. Łukasiewicz, “Laser oscillation of Er3+:YVO4 and Er3+, Yb3+:YVO4 crystals in the spectral range around 1.6 µm,” Appl. Phys. B 71, 893–896 (2000).

S. Kück, K. Petermann, U. Pohlmann, and G. Huber, “Near-infrared emission of Cr4+-doped garnets: Lifetimes, quantum efficiencies, and emission cross sections,” Phys. Rev. B 51(24), 17323–17331 (1995).
[CrossRef]

Lan, Y. P.

Y. F. Chen, S. W. Chen, Y. C. Chen, Y. P. Lan, and S. W. Tsai, “Compact efficient intracavity optical parametric oscillator with a passively Q-switched Nd:YVO4/Cr4+:YAG laser in a hemispherical cavity,” Appl. Phys. B 77(5), 493–495 (2003).
[CrossRef]

Laporta, P.

S. Taccheo, P. Laporta, S. Longhi, O. Svelto, and C. Svelto, “Diode-pumped bulk erbium–ytterbium lasers,” Appl. Phys. B 63, 425–436 (1996).

Laurand, N.

S. Calvez, N. Laurand, H. D. Sun, J. Weda, D. Burns, M. D. Dawson, A. Harkonen, T. Jouhti, M. Pessa, M. Hopkinson, D. Poitras, J. A. Gupta, C. G. Leburn, C. T. A. Brown, and W. Sibbett, “GaInNAs(Sb) surface normal devices,” Phys. Status Solidi 205(1), 85–92 (2008).

Leburn, C. G.

S. Calvez, N. Laurand, H. D. Sun, J. Weda, D. Burns, M. D. Dawson, A. Harkonen, T. Jouhti, M. Pessa, M. Hopkinson, D. Poitras, J. A. Gupta, C. G. Leburn, C. T. A. Brown, and W. Sibbett, “GaInNAs(Sb) surface normal devices,” Phys. Status Solidi 205(1), 85–92 (2008).

Lee, T. P.

C. E. Zah, R. Bhat, B. N. Pathak, F. Favire, W. Lin, M. C. Wang, N. C. Andreadakis, D. M. Hwang, M. A. Koza, T. P. Lee, Z. Wang, D. Darby, D. Flanders, and J. J. Heieh, “High-performance uncooled 1.3-m Al Ga In As/InP strained-layer quantum-well lasers for subscriberloop applications,” IEEE J. Quantum Electron. 30(2), 511–521 (1994).

Li, A.

S. C. Huang, H. L. Chang, K. W. Su, A. Li, S. C. Liu, Y. F. Chen, and K. F. Huang, “AlGaInAs/InP eye-safe laser pumped by a Q-switched Nd:GdVO4 laser,” Appl. Phys. B 94(3), 483–487 (2009).
[CrossRef]

Li, M. J.

N. Nishiyama, C. Caneau, B. Hall, G. Guryanov, M. Hu, X. Liu, M. J. Li, R. Bhat, and C. E. Zah, “Long-wavelength vertical-cavity surface-emitting lasers on InP with lattice matched AlGaInAs-InP DBR grown by MOCVD,” IEEE J. Sel. Top. Quantum Electron. 11(5), 990–998 (2005).

Li, S. T.

F. F. Su, X. Y. Zhang, Q. P. Wang, S. H. Ding, P. Jia, S. T. Li, S. Z. Fan, C. Zhang, and B. Liu, “Diode pumped actively Q-switched Nd:YVO4 self-Raman laser,” J. Phys. D Appl. Phys. 39(10), 2090–2093 (2006).
[CrossRef]

S. H. Ding, X. Y. Zhang, Q. P. Wang, F. F. Su, P. Jia, S. T. Li, S. Z. Fan, J. Chang, S. S. Zhang, and Z. J. Liu, “Theoretical and experimental study on the self-Raman laser with Nd:YVO4 crystal,” IEEE J. Quantum Electron. 42(9), 927–933 (2006).
[CrossRef]

Lin, W.

C. E. Zah, R. Bhat, B. N. Pathak, F. Favire, W. Lin, M. C. Wang, N. C. Andreadakis, D. M. Hwang, M. A. Koza, T. P. Lee, Z. Wang, D. Darby, D. Flanders, and J. J. Heieh, “High-performance uncooled 1.3-m Al Ga In As/InP strained-layer quantum-well lasers for subscriberloop applications,” IEEE J. Quantum Electron. 30(2), 511–521 (1994).

Lingvay, L. S.

G. J. Dixon, L. S. Lingvay, and R. H. Jarman, “Properties of close coupled monolithic, lithium neodymium, tetraphosphate lasers,” Proc. SPIE 1104, 107 (1989).

Liu, B.

F. F. Su, X. Y. Zhang, Q. P. Wang, S. H. Ding, P. Jia, S. T. Li, S. Z. Fan, C. Zhang, and B. Liu, “Diode pumped actively Q-switched Nd:YVO4 self-Raman laser,” J. Phys. D Appl. Phys. 39(10), 2090–2093 (2006).
[CrossRef]

Liu, S. C.

S. C. Huang, H. L. Chang, K. W. Su, A. Li, S. C. Liu, Y. F. Chen, and K. F. Huang, “AlGaInAs/InP eye-safe laser pumped by a Q-switched Nd:GdVO4 laser,” Appl. Phys. B 94(3), 483–487 (2009).
[CrossRef]

Liu, X.

N. Nishiyama, C. Caneau, B. Hall, G. Guryanov, M. Hu, X. Liu, M. J. Li, R. Bhat, and C. E. Zah, “Long-wavelength vertical-cavity surface-emitting lasers on InP with lattice matched AlGaInAs-InP DBR grown by MOCVD,” IEEE J. Sel. Top. Quantum Electron. 11(5), 990–998 (2005).

Liu, Z. J.

S. H. Ding, X. Y. Zhang, Q. P. Wang, F. F. Su, P. Jia, S. T. Li, S. Z. Fan, J. Chang, S. S. Zhang, and Z. J. Liu, “Theoretical and experimental study on the self-Raman laser with Nd:YVO4 crystal,” IEEE J. Quantum Electron. 42(9), 927–933 (2006).
[CrossRef]

Liu, Z. K.

H. T. Huang, J. L. He, X. L. Dong, C. H. Zuo, B. T. Zhang, G. Qiu, and Z. K. Liu, “High-repetition-rate eye-safe intracavity KTA OPO driven by a diode-end-pumped Q-switched Nd:YVO4 laser,” Appl. Phys. B 90(1), 43–45 (2008).
[CrossRef]

Longhi, S.

S. Taccheo, P. Laporta, S. Longhi, O. Svelto, and C. Svelto, “Diode-pumped bulk erbium–ytterbium lasers,” Appl. Phys. B 63, 425–436 (1996).

Lukasiewicz, T.

I. Sokólska, E. Heumann, S. Kück, and T. Łukasiewicz, “Laser oscillation of Er3+:YVO4 and Er3+, Yb3+:YVO4 crystals in the spectral range around 1.6 µm,” Appl. Phys. B 71, 893–896 (2000).

Manz, C.

J. Wagner, N. Schulz, M. Rattunde, C. Ritzenthaler, C. Manz, C. Wild, and K. Köhler, “Barrier- and in-well pumped GaSb-based 2.3 μm VECSELs,” Phys. Status Solidi 4(5), 1594–1600 (2007).

Mayor, S. D.

McGrath, A. J.

Minch, J.

J. Minch, S. H. Park, J. Minch, and S. L. Chuang, “Theory and Experiment of InGaAsP and InGaAlAs long-wavelength strained quantum-well lasers,” IEEE J. Quantum Electron. 35, 771–782 (1999).
[CrossRef]

J. Minch, S. H. Park, J. Minch, and S. L. Chuang, “Theory and Experiment of InGaAsP and InGaAlAs long-wavelength strained quantum-well lasers,” IEEE J. Quantum Electron. 35, 771–782 (1999).
[CrossRef]

Missaggia, L. J.

S. R. Šelmić, G. A. Evans, T. M. Chou, J. B. Kirk, J. N. Walpole, J. P. Donnelly, C. T. Harris, and L. J. Missaggia, “Single frequency 1550-nm AlGaInAs-InP tapered high-power laser with a distributed Bragg reflector,” IEEE Photon. Technol. Lett. 14(7), 890–892 (2002).

Mooradian, A.

Munch, J.

Nishiyama, N.

N. Nishiyama, C. Caneau, B. Hall, G. Guryanov, M. Hu, X. Liu, M. J. Li, R. Bhat, and C. E. Zah, “Long-wavelength vertical-cavity surface-emitting lasers on InP with lattice matched AlGaInAs-InP DBR grown by MOCVD,” IEEE J. Sel. Top. Quantum Electron. 11(5), 990–998 (2005).

Park, S. H.

J. Minch, S. H. Park, J. Minch, and S. L. Chuang, “Theory and Experiment of InGaAsP and InGaAlAs long-wavelength strained quantum-well lasers,” IEEE J. Quantum Electron. 35, 771–782 (1999).
[CrossRef]

Pathak, B. N.

C. E. Zah, R. Bhat, B. N. Pathak, F. Favire, W. Lin, M. C. Wang, N. C. Andreadakis, D. M. Hwang, M. A. Koza, T. P. Lee, Z. Wang, D. Darby, D. Flanders, and J. J. Heieh, “High-performance uncooled 1.3-m Al Ga In As/InP strained-layer quantum-well lasers for subscriberloop applications,” IEEE J. Quantum Electron. 30(2), 511–521 (1994).

Pessa, M.

S. Calvez, N. Laurand, H. D. Sun, J. Weda, D. Burns, M. D. Dawson, A. Harkonen, T. Jouhti, M. Pessa, M. Hopkinson, D. Poitras, J. A. Gupta, C. G. Leburn, C. T. A. Brown, and W. Sibbett, “GaInNAs(Sb) surface normal devices,” Phys. Status Solidi 205(1), 85–92 (2008).

Petermann, K.

S. Kück, K. Petermann, U. Pohlmann, and G. Huber, “Near-infrared emission of Cr4+-doped garnets: Lifetimes, quantum efficiencies, and emission cross sections,” Phys. Rev. B 51(24), 17323–17331 (1995).
[CrossRef]

Pohlmann, U.

S. Kück, K. Petermann, U. Pohlmann, and G. Huber, “Near-infrared emission of Cr4+-doped garnets: Lifetimes, quantum efficiencies, and emission cross sections,” Phys. Rev. B 51(24), 17323–17331 (1995).
[CrossRef]

Poitras, D.

S. Calvez, N. Laurand, H. D. Sun, J. Weda, D. Burns, M. D. Dawson, A. Harkonen, T. Jouhti, M. Pessa, M. Hopkinson, D. Poitras, J. A. Gupta, C. G. Leburn, C. T. A. Brown, and W. Sibbett, “GaInNAs(Sb) surface normal devices,” Phys. Status Solidi 205(1), 85–92 (2008).

Qiu, G.

H. T. Huang, J. L. He, X. L. Dong, C. H. Zuo, B. T. Zhang, G. Qiu, and Z. K. Liu, “High-repetition-rate eye-safe intracavity KTA OPO driven by a diode-end-pumped Q-switched Nd:YVO4 laser,” Appl. Phys. B 90(1), 43–45 (2008).
[CrossRef]

Rattunde, M.

J. Wagner, N. Schulz, M. Rattunde, C. Ritzenthaler, C. Manz, C. Wild, and K. Köhler, “Barrier- and in-well pumped GaSb-based 2.3 μm VECSELs,” Phys. Status Solidi 4(5), 1594–1600 (2007).

N. J. M. Hopkins, A. J. Kemp, N. Schulz, M. Rattunde, J. Wagner, M. D. Dawson, and D. Burns, “Pulsed pumping of semiconductor disk lasers,” Opt. Express 3, 3247–3256 (2007).

Riis, E.

M. Schmid, S. Benchabane, F. Torabi-Goudarzi, R. Abram, A. I. Ferguson, and E. Riis, “Optical in-well pumping of a vertical-external-cavity surface-emitting laser,” Appl. Phys. Lett. 84(24), 4860–4862 (2004).
[CrossRef]

Ritzenthaler, C.

J. Wagner, N. Schulz, M. Rattunde, C. Ritzenthaler, C. Manz, C. Wild, and K. Köhler, “Barrier- and in-well pumped GaSb-based 2.3 μm VECSELs,” Phys. Status Solidi 4(5), 1594–1600 (2007).

Rongbing, S.

Schmid, M.

M. Schmid, S. Benchabane, F. Torabi-Goudarzi, R. Abram, A. I. Ferguson, and E. Riis, “Optical in-well pumping of a vertical-external-cavity surface-emitting laser,” Appl. Phys. Lett. 84(24), 4860–4862 (2004).
[CrossRef]

Schulz, N.

J. Wagner, N. Schulz, M. Rattunde, C. Ritzenthaler, C. Manz, C. Wild, and K. Köhler, “Barrier- and in-well pumped GaSb-based 2.3 μm VECSELs,” Phys. Status Solidi 4(5), 1594–1600 (2007).

N. J. M. Hopkins, A. J. Kemp, N. Schulz, M. Rattunde, J. Wagner, M. D. Dawson, and D. Burns, “Pulsed pumping of semiconductor disk lasers,” Opt. Express 3, 3247–3256 (2007).

Šelmic, S. R.

S. R. Šelmić, G. A. Evans, T. M. Chou, J. B. Kirk, J. N. Walpole, J. P. Donnelly, C. T. Harris, and L. J. Missaggia, “Single frequency 1550-nm AlGaInAs-InP tapered high-power laser with a distributed Bragg reflector,” IEEE Photon. Technol. Lett. 14(7), 890–892 (2002).

Sibbett, W.

S. Calvez, N. Laurand, H. D. Sun, J. Weda, D. Burns, M. D. Dawson, A. Harkonen, T. Jouhti, M. Pessa, M. Hopkinson, D. Poitras, J. A. Gupta, C. G. Leburn, C. T. A. Brown, and W. Sibbett, “GaInNAs(Sb) surface normal devices,” Phys. Status Solidi 205(1), 85–92 (2008).

Smith, G.

Sokólska, I.

I. Sokólska, E. Heumann, S. Kück, and T. Łukasiewicz, “Laser oscillation of Er3+:YVO4 and Er3+, Yb3+:YVO4 crystals in the spectral range around 1.6 µm,” Appl. Phys. B 71, 893–896 (2000).

Spuler, S. M.

Su, F. F.

F. F. Su, X. Y. Zhang, Q. P. Wang, S. H. Ding, P. Jia, S. T. Li, S. Z. Fan, C. Zhang, and B. Liu, “Diode pumped actively Q-switched Nd:YVO4 self-Raman laser,” J. Phys. D Appl. Phys. 39(10), 2090–2093 (2006).
[CrossRef]

S. H. Ding, X. Y. Zhang, Q. P. Wang, F. F. Su, P. Jia, S. T. Li, S. Z. Fan, J. Chang, S. S. Zhang, and Z. J. Liu, “Theoretical and experimental study on the self-Raman laser with Nd:YVO4 crystal,” IEEE J. Quantum Electron. 42(9), 927–933 (2006).
[CrossRef]

Su, K. W.

S. C. Huang, H. L. Chang, K. W. Su, A. Li, S. C. Liu, Y. F. Chen, and K. F. Huang, “AlGaInAs/InP eye-safe laser pumped by a Q-switched Nd:GdVO4 laser,” Appl. Phys. B 94(3), 483–487 (2009).
[CrossRef]

Sun, H. D.

S. Calvez, N. Laurand, H. D. Sun, J. Weda, D. Burns, M. D. Dawson, A. Harkonen, T. Jouhti, M. Pessa, M. Hopkinson, D. Poitras, J. A. Gupta, C. G. Leburn, C. T. A. Brown, and W. Sibbett, “GaInNAs(Sb) surface normal devices,” Phys. Status Solidi 205(1), 85–92 (2008).

Svelto, C.

S. Taccheo, P. Laporta, S. Longhi, O. Svelto, and C. Svelto, “Diode-pumped bulk erbium–ytterbium lasers,” Appl. Phys. B 63, 425–436 (1996).

Svelto, O.

S. Taccheo, P. Laporta, S. Longhi, O. Svelto, and C. Svelto, “Diode-pumped bulk erbium–ytterbium lasers,” Appl. Phys. B 63, 425–436 (1996).

Taccheo, S.

S. Taccheo, P. Laporta, S. Longhi, O. Svelto, and C. Svelto, “Diode-pumped bulk erbium–ytterbium lasers,” Appl. Phys. B 63, 425–436 (1996).

Torabi-Goudarzi, F.

M. Schmid, S. Benchabane, F. Torabi-Goudarzi, R. Abram, A. I. Ferguson, and E. Riis, “Optical in-well pumping of a vertical-external-cavity surface-emitting laser,” Appl. Phys. Lett. 84(24), 4860–4862 (2004).
[CrossRef]

Tsai, L. Y.

Y. F. Chen and L. Y. Tsai, “Comparison between shared and coupled resonators for passively Q-switched Nd:GdVO4 intracavity optical parametric oscillators,” Appl. Phys. B 82(3), 403–406 (2006).
[CrossRef]

Tsai, S. W.

Y. F. Chen, S. W. Chen, Y. C. Chen, Y. P. Lan, and S. W. Tsai, “Compact efficient intracavity optical parametric oscillator with a passively Q-switched Nd:YVO4/Cr4+:YAG laser in a hemispherical cavity,” Appl. Phys. B 77(5), 493–495 (2003).
[CrossRef]

Veitch, P.

Wagner, J.

J. Wagner, N. Schulz, M. Rattunde, C. Ritzenthaler, C. Manz, C. Wild, and K. Köhler, “Barrier- and in-well pumped GaSb-based 2.3 μm VECSELs,” Phys. Status Solidi 4(5), 1594–1600 (2007).

N. J. M. Hopkins, A. J. Kemp, N. Schulz, M. Rattunde, J. Wagner, M. D. Dawson, and D. Burns, “Pulsed pumping of semiconductor disk lasers,” Opt. Express 3, 3247–3256 (2007).

Walpole, J. N.

S. R. Šelmić, G. A. Evans, T. M. Chou, J. B. Kirk, J. N. Walpole, J. P. Donnelly, C. T. Harris, and L. J. Missaggia, “Single frequency 1550-nm AlGaInAs-InP tapered high-power laser with a distributed Bragg reflector,” IEEE Photon. Technol. Lett. 14(7), 890–892 (2002).

Wang, M. C.

C. E. Zah, R. Bhat, B. N. Pathak, F. Favire, W. Lin, M. C. Wang, N. C. Andreadakis, D. M. Hwang, M. A. Koza, T. P. Lee, Z. Wang, D. Darby, D. Flanders, and J. J. Heieh, “High-performance uncooled 1.3-m Al Ga In As/InP strained-layer quantum-well lasers for subscriberloop applications,” IEEE J. Quantum Electron. 30(2), 511–521 (1994).

Wang, Q. P.

S. H. Ding, X. Y. Zhang, Q. P. Wang, F. F. Su, P. Jia, S. T. Li, S. Z. Fan, J. Chang, S. S. Zhang, and Z. J. Liu, “Theoretical and experimental study on the self-Raman laser with Nd:YVO4 crystal,” IEEE J. Quantum Electron. 42(9), 927–933 (2006).
[CrossRef]

F. F. Su, X. Y. Zhang, Q. P. Wang, S. H. Ding, P. Jia, S. T. Li, S. Z. Fan, C. Zhang, and B. Liu, “Diode pumped actively Q-switched Nd:YVO4 self-Raman laser,” J. Phys. D Appl. Phys. 39(10), 2090–2093 (2006).
[CrossRef]

Wang, Z.

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[CrossRef]

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Figures (8)

Fig. 1.
Fig. 1.

Schematic explanation of energy diagrams of (a) barrier pumping and (b) in-well pumping.

Fig. 2.
Fig. 2.

The schematic of the AlGaInAs/InP eye-safe laser at 1555 nm. HR: high reflection; HT: high transmission; PR: partial reflection.

Fig. 3.
Fig. 3.

(a) The transmission spectrum of AlGaInAs QWs. (b) the room-temperature spectrum of photoluminescence pumped by an actively Q-switched Nd:YVO4 1342-nm laser. (c) The single pass absorption efficiency of single and double AlGaInAs QW chips.

Fig. 4.
Fig. 4.

The performance of single-chip AlGaInAs 1555-nm laser for 40 kHz and 12°C operation in the scheme of barrier and in-well pumping, respectively. The solid lines are forth order polynomial fitting curves. The in-well pumping scheme exhibits good performance in conversion efficiency.

Fig. 5.
Fig. 5.

Performance of double chips: (a) Experimental results for the optically pumped AlGaInAs eye-safe laser operated at 12 °C for several pulse repetition rates. The repetition rate for optimum performance of conversion efficiency was between 40 kHz and 60 kHz. (b) Typical lasing spectrum at repetition rate of 40 kHz and average pump power of 0.65 W

Fig. 6.
Fig. 6.

The output characteristics of double chips in in-well pumping and of single chip in barrier pumping were measured for the operation of different temperature. In-well pumping was operated in 50 kHz repetition rate, while barrier pumping in 30 kHz for optimum conversion efficiency. The result shows the influence of thermal effect on conversion efficiency.

Fig. 7.
Fig. 7.

The output peak power of double-chip AlGaInAs eye-safe laser at repetition rate of 20 kHz. At the pump peak power of 3.7 kW, the output peak power is up to 0.52 kW.

Fig. 8.
Fig. 8.

The typical pump and output pulse train and the expanded pulse shape of a single pulse.

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