Abstract

Transform-limited pulses as short as 290 fs at 1036 nm are generated by a diode-pumped semiconductor disk laser. The all-semiconductor laser employs a graded-gap-barrier design in the gain section. A fast saturable absorber mirror serves as a passive mode-locker. No further elements for internal or external dispersion control are required.

© 2008 Optical Society of America

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References

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  1. M. Kuznetsov, F. Hakimi, R. Sprague, and A. Mooradian, “Design and Characteristics of High-Power (>0.5-W CW) Diode-Pumped Vertical-External-Cavity Surface-Emitting Semiconductor Lasers with Circular TEM00 Beams,” IEEE J. Sel. Top. Quantum Electron. 5, 561–573 (1999).
    [Crossref]
  2. J. L. Chilla, S. D. Butterworth, A. Zeitschel, J. P. Charles, A. L. Caprara, M. K. Reed, and L. Spinelli, “High power optically pumped semiconductor lasers,” in Solid State Lasers XIII: Technology and Devices, R. Scheps and H. J. Hoffman, eds., Proc. SPIE 5332, 143–150 (2004).
    [Crossref]
  3. J. E. Hastie, S. Calvez, M. D. Dawson, T. Leinonen, A. Laakso, J. Lyytikäinen, and M. Pessa, “High power CW red VECSEL with linearly polarized TEM00 output beam,” Opt. Express 13, 77–81 (2004).
    [Crossref]
  4. L. Cerutti, A. Garnache, A. Ouvrard, and F. Genty, “High temperature continuous wave operation of Sb-based vertical external cavity surface emitting laser near 2.3 µm,” J. Cryst. Growth 268, 128–134 (2004).
    [Crossref]
  5. J. E. Hastie, L. G. Morton, A. J. Kemp, M. D. Dawson, A. B. Krysa, and J. S. Roberts, “Tunable ultraviolet output from an intracavity frequency-doubled red vertical-external-cavity surface-emitting laser,” Appl. Phys. Lett. 89, 061114 (2006).
    [Crossref]
  6. E. U. Rafailov, W. Sibbett, A. Mooradian, J. G. McInerney, H. Karlsson, S. Wang, and F. Laurell, “Efficient frequency doubling of a vertical-extended-cavity surface-emitting laser diode by use of a periodically poled KTP crystal,” Opt. Lett. 28, 2091–2093 (2003).
    [Crossref] [PubMed]
  7. U. Keller and A. C. Tropper, “Passively modelocked surface-emitting semiconductor lasers,” Phys. Rep. 429, 67–120 (2006).
    [Crossref]
  8. R. Paschotta, R. Häring, A. Garnache, S. Hoogland, A. C. Tropper, and U. Keller, “Soliton-like pulse-shaping mechanism in passively mode-locked surface-emitting semiconductor lasers,” Appl. Phys. B 75, 445–451 (2002).
    [Crossref]
  9. A. Garnache, S. Hoogland, A. C. Tropper, I. Sagnes, G. Saint-Girons, and J. S. Roberts, “Sub-500-fs soliton-like pulse in a passively mode-locked broadband surface-emitting laser with 100 mW average power,” Appl. Phys. Lett. 80, 3892–3894 (2002).
    [Crossref]
  10. S. Hoogland, A. Garnache, I. Sagnes, J. S. Roberts, and A. C. Tropper, “10-GHz Train of Sub-500-fs Optical Soliton-Like Pulses From a Surface-Emitting Semiconductor Laser,” IEEE Photon. Technol. Lett. 17, 267–269 (2005).
    [Crossref]
  11. Y. Nomura, S. Ochi, N. Tomita, K. Akiyama, T. Isu, T. Takiguchi, and H. Higuchi, “Mode locking in Fabry-Perot semiconductor lasers,” Phys. Rev. A 65, 043807 (2002).
    [Crossref]
  12. H. Kroemer, “Quasi-Electric Fields and Band Offsets: Teaching Electrons New Tricks (Nobel Lecture),” ChemPhysChem 2, 490–499 (2001).
    [Crossref]
  13. F. Saas, V. Talalaev, U. Griebner, J. W. Tomm, M. Zorn, and M. Weyers, “Optically pumped semiconductor disk laser with graded and step indices,” Appl. Phys. Lett. 89, 151120 (2006).
    [Crossref]
  14. F. Saas, G. Steinmeyer, U. Griebner, M. Zorn, and M. Weyers, “Exciton resonance tuning for the generation of sub-picosecond pulses from a mode-locked semiconductor disk laser,” Appl. Phys. Lett. 89, 141107 (2006).
    [Crossref]
  15. U. Zeimer, J. Grenzer, D. Korn, S. Döring, M. Zorn, W. Pittroff, U. Pietsch, F. Saas, and M. Weyers, “X-ray diffraction spot mapping - a tool to study structural properties of semiconductor disk laser devices,” phys. stat. sol. (a) 204, 2753–2759 (2007).
    [Crossref]
  16. M. J. Lederer, B. Luther-Davies, H. H. Tan, C. Jagadish, N. N. Akhmediev, and J. M. Soto-Crespo, “Multipulse operation of a Ti:sapphire laser mode locked by an ion-implanted semiconductor saturable-absorber mirror,” J. Opt. Soc. Am. B 16, 895–904 (1999).
    [Crossref]
  17. Esa J. Saarinen, Robert Herda, and Oleg G. Okhotnikov, “Dynamics of pulse formation in mode-locked semiconductor disk lasers,” J. Opt. Soc. Am. B 24, 2784–2790 (2007).
    [Crossref]
  18. S. Tsuda, W. H. Knox, S. T. Cundiff, W. Y. Jan, and J. E. Cunningham, “Mode-Locking Ultrafast Solid-State Lasers with Saturable Bragg Reflectors,” IEEE J. Sel. Top. Quantum Electron. 2, 454–464 (1996).
    [Crossref]

2007 (2)

U. Zeimer, J. Grenzer, D. Korn, S. Döring, M. Zorn, W. Pittroff, U. Pietsch, F. Saas, and M. Weyers, “X-ray diffraction spot mapping - a tool to study structural properties of semiconductor disk laser devices,” phys. stat. sol. (a) 204, 2753–2759 (2007).
[Crossref]

Esa J. Saarinen, Robert Herda, and Oleg G. Okhotnikov, “Dynamics of pulse formation in mode-locked semiconductor disk lasers,” J. Opt. Soc. Am. B 24, 2784–2790 (2007).
[Crossref]

2006 (4)

F. Saas, V. Talalaev, U. Griebner, J. W. Tomm, M. Zorn, and M. Weyers, “Optically pumped semiconductor disk laser with graded and step indices,” Appl. Phys. Lett. 89, 151120 (2006).
[Crossref]

F. Saas, G. Steinmeyer, U. Griebner, M. Zorn, and M. Weyers, “Exciton resonance tuning for the generation of sub-picosecond pulses from a mode-locked semiconductor disk laser,” Appl. Phys. Lett. 89, 141107 (2006).
[Crossref]

J. E. Hastie, L. G. Morton, A. J. Kemp, M. D. Dawson, A. B. Krysa, and J. S. Roberts, “Tunable ultraviolet output from an intracavity frequency-doubled red vertical-external-cavity surface-emitting laser,” Appl. Phys. Lett. 89, 061114 (2006).
[Crossref]

U. Keller and A. C. Tropper, “Passively modelocked surface-emitting semiconductor lasers,” Phys. Rep. 429, 67–120 (2006).
[Crossref]

2005 (1)

S. Hoogland, A. Garnache, I. Sagnes, J. S. Roberts, and A. C. Tropper, “10-GHz Train of Sub-500-fs Optical Soliton-Like Pulses From a Surface-Emitting Semiconductor Laser,” IEEE Photon. Technol. Lett. 17, 267–269 (2005).
[Crossref]

2004 (3)

J. L. Chilla, S. D. Butterworth, A. Zeitschel, J. P. Charles, A. L. Caprara, M. K. Reed, and L. Spinelli, “High power optically pumped semiconductor lasers,” in Solid State Lasers XIII: Technology and Devices, R. Scheps and H. J. Hoffman, eds., Proc. SPIE 5332, 143–150 (2004).
[Crossref]

J. E. Hastie, S. Calvez, M. D. Dawson, T. Leinonen, A. Laakso, J. Lyytikäinen, and M. Pessa, “High power CW red VECSEL with linearly polarized TEM00 output beam,” Opt. Express 13, 77–81 (2004).
[Crossref]

L. Cerutti, A. Garnache, A. Ouvrard, and F. Genty, “High temperature continuous wave operation of Sb-based vertical external cavity surface emitting laser near 2.3 µm,” J. Cryst. Growth 268, 128–134 (2004).
[Crossref]

2003 (1)

2002 (3)

Y. Nomura, S. Ochi, N. Tomita, K. Akiyama, T. Isu, T. Takiguchi, and H. Higuchi, “Mode locking in Fabry-Perot semiconductor lasers,” Phys. Rev. A 65, 043807 (2002).
[Crossref]

R. Paschotta, R. Häring, A. Garnache, S. Hoogland, A. C. Tropper, and U. Keller, “Soliton-like pulse-shaping mechanism in passively mode-locked surface-emitting semiconductor lasers,” Appl. Phys. B 75, 445–451 (2002).
[Crossref]

A. Garnache, S. Hoogland, A. C. Tropper, I. Sagnes, G. Saint-Girons, and J. S. Roberts, “Sub-500-fs soliton-like pulse in a passively mode-locked broadband surface-emitting laser with 100 mW average power,” Appl. Phys. Lett. 80, 3892–3894 (2002).
[Crossref]

2001 (1)

H. Kroemer, “Quasi-Electric Fields and Band Offsets: Teaching Electrons New Tricks (Nobel Lecture),” ChemPhysChem 2, 490–499 (2001).
[Crossref]

1999 (2)

M. J. Lederer, B. Luther-Davies, H. H. Tan, C. Jagadish, N. N. Akhmediev, and J. M. Soto-Crespo, “Multipulse operation of a Ti:sapphire laser mode locked by an ion-implanted semiconductor saturable-absorber mirror,” J. Opt. Soc. Am. B 16, 895–904 (1999).
[Crossref]

M. Kuznetsov, F. Hakimi, R. Sprague, and A. Mooradian, “Design and Characteristics of High-Power (>0.5-W CW) Diode-Pumped Vertical-External-Cavity Surface-Emitting Semiconductor Lasers with Circular TEM00 Beams,” IEEE J. Sel. Top. Quantum Electron. 5, 561–573 (1999).
[Crossref]

1996 (1)

S. Tsuda, W. H. Knox, S. T. Cundiff, W. Y. Jan, and J. E. Cunningham, “Mode-Locking Ultrafast Solid-State Lasers with Saturable Bragg Reflectors,” IEEE J. Sel. Top. Quantum Electron. 2, 454–464 (1996).
[Crossref]

Akhmediev, N. N.

Akiyama, K.

Y. Nomura, S. Ochi, N. Tomita, K. Akiyama, T. Isu, T. Takiguchi, and H. Higuchi, “Mode locking in Fabry-Perot semiconductor lasers,” Phys. Rev. A 65, 043807 (2002).
[Crossref]

Butterworth, S. D.

J. L. Chilla, S. D. Butterworth, A. Zeitschel, J. P. Charles, A. L. Caprara, M. K. Reed, and L. Spinelli, “High power optically pumped semiconductor lasers,” in Solid State Lasers XIII: Technology and Devices, R. Scheps and H. J. Hoffman, eds., Proc. SPIE 5332, 143–150 (2004).
[Crossref]

Calvez, S.

Caprara, A. L.

J. L. Chilla, S. D. Butterworth, A. Zeitschel, J. P. Charles, A. L. Caprara, M. K. Reed, and L. Spinelli, “High power optically pumped semiconductor lasers,” in Solid State Lasers XIII: Technology and Devices, R. Scheps and H. J. Hoffman, eds., Proc. SPIE 5332, 143–150 (2004).
[Crossref]

Cerutti, L.

L. Cerutti, A. Garnache, A. Ouvrard, and F. Genty, “High temperature continuous wave operation of Sb-based vertical external cavity surface emitting laser near 2.3 µm,” J. Cryst. Growth 268, 128–134 (2004).
[Crossref]

Charles, J. P.

J. L. Chilla, S. D. Butterworth, A. Zeitschel, J. P. Charles, A. L. Caprara, M. K. Reed, and L. Spinelli, “High power optically pumped semiconductor lasers,” in Solid State Lasers XIII: Technology and Devices, R. Scheps and H. J. Hoffman, eds., Proc. SPIE 5332, 143–150 (2004).
[Crossref]

Chilla, J. L.

J. L. Chilla, S. D. Butterworth, A. Zeitschel, J. P. Charles, A. L. Caprara, M. K. Reed, and L. Spinelli, “High power optically pumped semiconductor lasers,” in Solid State Lasers XIII: Technology and Devices, R. Scheps and H. J. Hoffman, eds., Proc. SPIE 5332, 143–150 (2004).
[Crossref]

Cundiff, S. T.

S. Tsuda, W. H. Knox, S. T. Cundiff, W. Y. Jan, and J. E. Cunningham, “Mode-Locking Ultrafast Solid-State Lasers with Saturable Bragg Reflectors,” IEEE J. Sel. Top. Quantum Electron. 2, 454–464 (1996).
[Crossref]

Cunningham, J. E.

S. Tsuda, W. H. Knox, S. T. Cundiff, W. Y. Jan, and J. E. Cunningham, “Mode-Locking Ultrafast Solid-State Lasers with Saturable Bragg Reflectors,” IEEE J. Sel. Top. Quantum Electron. 2, 454–464 (1996).
[Crossref]

Dawson, M. D.

J. E. Hastie, L. G. Morton, A. J. Kemp, M. D. Dawson, A. B. Krysa, and J. S. Roberts, “Tunable ultraviolet output from an intracavity frequency-doubled red vertical-external-cavity surface-emitting laser,” Appl. Phys. Lett. 89, 061114 (2006).
[Crossref]

J. E. Hastie, S. Calvez, M. D. Dawson, T. Leinonen, A. Laakso, J. Lyytikäinen, and M. Pessa, “High power CW red VECSEL with linearly polarized TEM00 output beam,” Opt. Express 13, 77–81 (2004).
[Crossref]

Döring, S.

U. Zeimer, J. Grenzer, D. Korn, S. Döring, M. Zorn, W. Pittroff, U. Pietsch, F. Saas, and M. Weyers, “X-ray diffraction spot mapping - a tool to study structural properties of semiconductor disk laser devices,” phys. stat. sol. (a) 204, 2753–2759 (2007).
[Crossref]

Garnache, A.

S. Hoogland, A. Garnache, I. Sagnes, J. S. Roberts, and A. C. Tropper, “10-GHz Train of Sub-500-fs Optical Soliton-Like Pulses From a Surface-Emitting Semiconductor Laser,” IEEE Photon. Technol. Lett. 17, 267–269 (2005).
[Crossref]

L. Cerutti, A. Garnache, A. Ouvrard, and F. Genty, “High temperature continuous wave operation of Sb-based vertical external cavity surface emitting laser near 2.3 µm,” J. Cryst. Growth 268, 128–134 (2004).
[Crossref]

A. Garnache, S. Hoogland, A. C. Tropper, I. Sagnes, G. Saint-Girons, and J. S. Roberts, “Sub-500-fs soliton-like pulse in a passively mode-locked broadband surface-emitting laser with 100 mW average power,” Appl. Phys. Lett. 80, 3892–3894 (2002).
[Crossref]

R. Paschotta, R. Häring, A. Garnache, S. Hoogland, A. C. Tropper, and U. Keller, “Soliton-like pulse-shaping mechanism in passively mode-locked surface-emitting semiconductor lasers,” Appl. Phys. B 75, 445–451 (2002).
[Crossref]

Genty, F.

L. Cerutti, A. Garnache, A. Ouvrard, and F. Genty, “High temperature continuous wave operation of Sb-based vertical external cavity surface emitting laser near 2.3 µm,” J. Cryst. Growth 268, 128–134 (2004).
[Crossref]

Grenzer, J.

U. Zeimer, J. Grenzer, D. Korn, S. Döring, M. Zorn, W. Pittroff, U. Pietsch, F. Saas, and M. Weyers, “X-ray diffraction spot mapping - a tool to study structural properties of semiconductor disk laser devices,” phys. stat. sol. (a) 204, 2753–2759 (2007).
[Crossref]

Griebner, U.

F. Saas, V. Talalaev, U. Griebner, J. W. Tomm, M. Zorn, and M. Weyers, “Optically pumped semiconductor disk laser with graded and step indices,” Appl. Phys. Lett. 89, 151120 (2006).
[Crossref]

F. Saas, G. Steinmeyer, U. Griebner, M. Zorn, and M. Weyers, “Exciton resonance tuning for the generation of sub-picosecond pulses from a mode-locked semiconductor disk laser,” Appl. Phys. Lett. 89, 141107 (2006).
[Crossref]

Hakimi, F.

M. Kuznetsov, F. Hakimi, R. Sprague, and A. Mooradian, “Design and Characteristics of High-Power (>0.5-W CW) Diode-Pumped Vertical-External-Cavity Surface-Emitting Semiconductor Lasers with Circular TEM00 Beams,” IEEE J. Sel. Top. Quantum Electron. 5, 561–573 (1999).
[Crossref]

Häring, R.

R. Paschotta, R. Häring, A. Garnache, S. Hoogland, A. C. Tropper, and U. Keller, “Soliton-like pulse-shaping mechanism in passively mode-locked surface-emitting semiconductor lasers,” Appl. Phys. B 75, 445–451 (2002).
[Crossref]

Hastie, J. E.

J. E. Hastie, L. G. Morton, A. J. Kemp, M. D. Dawson, A. B. Krysa, and J. S. Roberts, “Tunable ultraviolet output from an intracavity frequency-doubled red vertical-external-cavity surface-emitting laser,” Appl. Phys. Lett. 89, 061114 (2006).
[Crossref]

J. E. Hastie, S. Calvez, M. D. Dawson, T. Leinonen, A. Laakso, J. Lyytikäinen, and M. Pessa, “High power CW red VECSEL with linearly polarized TEM00 output beam,” Opt. Express 13, 77–81 (2004).
[Crossref]

Herda, Robert

Higuchi, H.

Y. Nomura, S. Ochi, N. Tomita, K. Akiyama, T. Isu, T. Takiguchi, and H. Higuchi, “Mode locking in Fabry-Perot semiconductor lasers,” Phys. Rev. A 65, 043807 (2002).
[Crossref]

Hoogland, S.

S. Hoogland, A. Garnache, I. Sagnes, J. S. Roberts, and A. C. Tropper, “10-GHz Train of Sub-500-fs Optical Soliton-Like Pulses From a Surface-Emitting Semiconductor Laser,” IEEE Photon. Technol. Lett. 17, 267–269 (2005).
[Crossref]

A. Garnache, S. Hoogland, A. C. Tropper, I. Sagnes, G. Saint-Girons, and J. S. Roberts, “Sub-500-fs soliton-like pulse in a passively mode-locked broadband surface-emitting laser with 100 mW average power,” Appl. Phys. Lett. 80, 3892–3894 (2002).
[Crossref]

R. Paschotta, R. Häring, A. Garnache, S. Hoogland, A. C. Tropper, and U. Keller, “Soliton-like pulse-shaping mechanism in passively mode-locked surface-emitting semiconductor lasers,” Appl. Phys. B 75, 445–451 (2002).
[Crossref]

Isu, T.

Y. Nomura, S. Ochi, N. Tomita, K. Akiyama, T. Isu, T. Takiguchi, and H. Higuchi, “Mode locking in Fabry-Perot semiconductor lasers,” Phys. Rev. A 65, 043807 (2002).
[Crossref]

Jagadish, C.

Jan, W. Y.

S. Tsuda, W. H. Knox, S. T. Cundiff, W. Y. Jan, and J. E. Cunningham, “Mode-Locking Ultrafast Solid-State Lasers with Saturable Bragg Reflectors,” IEEE J. Sel. Top. Quantum Electron. 2, 454–464 (1996).
[Crossref]

Karlsson, H.

Keller, U.

U. Keller and A. C. Tropper, “Passively modelocked surface-emitting semiconductor lasers,” Phys. Rep. 429, 67–120 (2006).
[Crossref]

R. Paschotta, R. Häring, A. Garnache, S. Hoogland, A. C. Tropper, and U. Keller, “Soliton-like pulse-shaping mechanism in passively mode-locked surface-emitting semiconductor lasers,” Appl. Phys. B 75, 445–451 (2002).
[Crossref]

Kemp, A. J.

J. E. Hastie, L. G. Morton, A. J. Kemp, M. D. Dawson, A. B. Krysa, and J. S. Roberts, “Tunable ultraviolet output from an intracavity frequency-doubled red vertical-external-cavity surface-emitting laser,” Appl. Phys. Lett. 89, 061114 (2006).
[Crossref]

Knox, W. H.

S. Tsuda, W. H. Knox, S. T. Cundiff, W. Y. Jan, and J. E. Cunningham, “Mode-Locking Ultrafast Solid-State Lasers with Saturable Bragg Reflectors,” IEEE J. Sel. Top. Quantum Electron. 2, 454–464 (1996).
[Crossref]

Korn, D.

U. Zeimer, J. Grenzer, D. Korn, S. Döring, M. Zorn, W. Pittroff, U. Pietsch, F. Saas, and M. Weyers, “X-ray diffraction spot mapping - a tool to study structural properties of semiconductor disk laser devices,” phys. stat. sol. (a) 204, 2753–2759 (2007).
[Crossref]

Kroemer, H.

H. Kroemer, “Quasi-Electric Fields and Band Offsets: Teaching Electrons New Tricks (Nobel Lecture),” ChemPhysChem 2, 490–499 (2001).
[Crossref]

Krysa, A. B.

J. E. Hastie, L. G. Morton, A. J. Kemp, M. D. Dawson, A. B. Krysa, and J. S. Roberts, “Tunable ultraviolet output from an intracavity frequency-doubled red vertical-external-cavity surface-emitting laser,” Appl. Phys. Lett. 89, 061114 (2006).
[Crossref]

Kuznetsov, M.

M. Kuznetsov, F. Hakimi, R. Sprague, and A. Mooradian, “Design and Characteristics of High-Power (>0.5-W CW) Diode-Pumped Vertical-External-Cavity Surface-Emitting Semiconductor Lasers with Circular TEM00 Beams,” IEEE J. Sel. Top. Quantum Electron. 5, 561–573 (1999).
[Crossref]

Laakso, A.

Laurell, F.

Lederer, M. J.

Leinonen, T.

Luther-Davies, B.

Lyytikäinen, J.

McInerney, J. G.

Mooradian, A.

E. U. Rafailov, W. Sibbett, A. Mooradian, J. G. McInerney, H. Karlsson, S. Wang, and F. Laurell, “Efficient frequency doubling of a vertical-extended-cavity surface-emitting laser diode by use of a periodically poled KTP crystal,” Opt. Lett. 28, 2091–2093 (2003).
[Crossref] [PubMed]

M. Kuznetsov, F. Hakimi, R. Sprague, and A. Mooradian, “Design and Characteristics of High-Power (>0.5-W CW) Diode-Pumped Vertical-External-Cavity Surface-Emitting Semiconductor Lasers with Circular TEM00 Beams,” IEEE J. Sel. Top. Quantum Electron. 5, 561–573 (1999).
[Crossref]

Morton, L. G.

J. E. Hastie, L. G. Morton, A. J. Kemp, M. D. Dawson, A. B. Krysa, and J. S. Roberts, “Tunable ultraviolet output from an intracavity frequency-doubled red vertical-external-cavity surface-emitting laser,” Appl. Phys. Lett. 89, 061114 (2006).
[Crossref]

Nomura, Y.

Y. Nomura, S. Ochi, N. Tomita, K. Akiyama, T. Isu, T. Takiguchi, and H. Higuchi, “Mode locking in Fabry-Perot semiconductor lasers,” Phys. Rev. A 65, 043807 (2002).
[Crossref]

Ochi, S.

Y. Nomura, S. Ochi, N. Tomita, K. Akiyama, T. Isu, T. Takiguchi, and H. Higuchi, “Mode locking in Fabry-Perot semiconductor lasers,” Phys. Rev. A 65, 043807 (2002).
[Crossref]

Okhotnikov, Oleg G.

Ouvrard, A.

L. Cerutti, A. Garnache, A. Ouvrard, and F. Genty, “High temperature continuous wave operation of Sb-based vertical external cavity surface emitting laser near 2.3 µm,” J. Cryst. Growth 268, 128–134 (2004).
[Crossref]

Paschotta, R.

R. Paschotta, R. Häring, A. Garnache, S. Hoogland, A. C. Tropper, and U. Keller, “Soliton-like pulse-shaping mechanism in passively mode-locked surface-emitting semiconductor lasers,” Appl. Phys. B 75, 445–451 (2002).
[Crossref]

Pessa, M.

Pietsch, U.

U. Zeimer, J. Grenzer, D. Korn, S. Döring, M. Zorn, W. Pittroff, U. Pietsch, F. Saas, and M. Weyers, “X-ray diffraction spot mapping - a tool to study structural properties of semiconductor disk laser devices,” phys. stat. sol. (a) 204, 2753–2759 (2007).
[Crossref]

Pittroff, W.

U. Zeimer, J. Grenzer, D. Korn, S. Döring, M. Zorn, W. Pittroff, U. Pietsch, F. Saas, and M. Weyers, “X-ray diffraction spot mapping - a tool to study structural properties of semiconductor disk laser devices,” phys. stat. sol. (a) 204, 2753–2759 (2007).
[Crossref]

Rafailov, E. U.

Reed, M. K.

J. L. Chilla, S. D. Butterworth, A. Zeitschel, J. P. Charles, A. L. Caprara, M. K. Reed, and L. Spinelli, “High power optically pumped semiconductor lasers,” in Solid State Lasers XIII: Technology and Devices, R. Scheps and H. J. Hoffman, eds., Proc. SPIE 5332, 143–150 (2004).
[Crossref]

Roberts, J. S.

J. E. Hastie, L. G. Morton, A. J. Kemp, M. D. Dawson, A. B. Krysa, and J. S. Roberts, “Tunable ultraviolet output from an intracavity frequency-doubled red vertical-external-cavity surface-emitting laser,” Appl. Phys. Lett. 89, 061114 (2006).
[Crossref]

S. Hoogland, A. Garnache, I. Sagnes, J. S. Roberts, and A. C. Tropper, “10-GHz Train of Sub-500-fs Optical Soliton-Like Pulses From a Surface-Emitting Semiconductor Laser,” IEEE Photon. Technol. Lett. 17, 267–269 (2005).
[Crossref]

A. Garnache, S. Hoogland, A. C. Tropper, I. Sagnes, G. Saint-Girons, and J. S. Roberts, “Sub-500-fs soliton-like pulse in a passively mode-locked broadband surface-emitting laser with 100 mW average power,” Appl. Phys. Lett. 80, 3892–3894 (2002).
[Crossref]

Saarinen, Esa J.

Saas, F.

U. Zeimer, J. Grenzer, D. Korn, S. Döring, M. Zorn, W. Pittroff, U. Pietsch, F. Saas, and M. Weyers, “X-ray diffraction spot mapping - a tool to study structural properties of semiconductor disk laser devices,” phys. stat. sol. (a) 204, 2753–2759 (2007).
[Crossref]

F. Saas, V. Talalaev, U. Griebner, J. W. Tomm, M. Zorn, and M. Weyers, “Optically pumped semiconductor disk laser with graded and step indices,” Appl. Phys. Lett. 89, 151120 (2006).
[Crossref]

F. Saas, G. Steinmeyer, U. Griebner, M. Zorn, and M. Weyers, “Exciton resonance tuning for the generation of sub-picosecond pulses from a mode-locked semiconductor disk laser,” Appl. Phys. Lett. 89, 141107 (2006).
[Crossref]

Sagnes, I.

S. Hoogland, A. Garnache, I. Sagnes, J. S. Roberts, and A. C. Tropper, “10-GHz Train of Sub-500-fs Optical Soliton-Like Pulses From a Surface-Emitting Semiconductor Laser,” IEEE Photon. Technol. Lett. 17, 267–269 (2005).
[Crossref]

A. Garnache, S. Hoogland, A. C. Tropper, I. Sagnes, G. Saint-Girons, and J. S. Roberts, “Sub-500-fs soliton-like pulse in a passively mode-locked broadband surface-emitting laser with 100 mW average power,” Appl. Phys. Lett. 80, 3892–3894 (2002).
[Crossref]

Saint-Girons, G.

A. Garnache, S. Hoogland, A. C. Tropper, I. Sagnes, G. Saint-Girons, and J. S. Roberts, “Sub-500-fs soliton-like pulse in a passively mode-locked broadband surface-emitting laser with 100 mW average power,” Appl. Phys. Lett. 80, 3892–3894 (2002).
[Crossref]

Sibbett, W.

Soto-Crespo, J. M.

Spinelli, L.

J. L. Chilla, S. D. Butterworth, A. Zeitschel, J. P. Charles, A. L. Caprara, M. K. Reed, and L. Spinelli, “High power optically pumped semiconductor lasers,” in Solid State Lasers XIII: Technology and Devices, R. Scheps and H. J. Hoffman, eds., Proc. SPIE 5332, 143–150 (2004).
[Crossref]

Sprague, R.

M. Kuznetsov, F. Hakimi, R. Sprague, and A. Mooradian, “Design and Characteristics of High-Power (>0.5-W CW) Diode-Pumped Vertical-External-Cavity Surface-Emitting Semiconductor Lasers with Circular TEM00 Beams,” IEEE J. Sel. Top. Quantum Electron. 5, 561–573 (1999).
[Crossref]

Steinmeyer, G.

F. Saas, G. Steinmeyer, U. Griebner, M. Zorn, and M. Weyers, “Exciton resonance tuning for the generation of sub-picosecond pulses from a mode-locked semiconductor disk laser,” Appl. Phys. Lett. 89, 141107 (2006).
[Crossref]

Takiguchi, T.

Y. Nomura, S. Ochi, N. Tomita, K. Akiyama, T. Isu, T. Takiguchi, and H. Higuchi, “Mode locking in Fabry-Perot semiconductor lasers,” Phys. Rev. A 65, 043807 (2002).
[Crossref]

Talalaev, V.

F. Saas, V. Talalaev, U. Griebner, J. W. Tomm, M. Zorn, and M. Weyers, “Optically pumped semiconductor disk laser with graded and step indices,” Appl. Phys. Lett. 89, 151120 (2006).
[Crossref]

Tan, H. H.

Tomita, N.

Y. Nomura, S. Ochi, N. Tomita, K. Akiyama, T. Isu, T. Takiguchi, and H. Higuchi, “Mode locking in Fabry-Perot semiconductor lasers,” Phys. Rev. A 65, 043807 (2002).
[Crossref]

Tomm, J. W.

F. Saas, V. Talalaev, U. Griebner, J. W. Tomm, M. Zorn, and M. Weyers, “Optically pumped semiconductor disk laser with graded and step indices,” Appl. Phys. Lett. 89, 151120 (2006).
[Crossref]

Tropper, A. C.

U. Keller and A. C. Tropper, “Passively modelocked surface-emitting semiconductor lasers,” Phys. Rep. 429, 67–120 (2006).
[Crossref]

S. Hoogland, A. Garnache, I. Sagnes, J. S. Roberts, and A. C. Tropper, “10-GHz Train of Sub-500-fs Optical Soliton-Like Pulses From a Surface-Emitting Semiconductor Laser,” IEEE Photon. Technol. Lett. 17, 267–269 (2005).
[Crossref]

R. Paschotta, R. Häring, A. Garnache, S. Hoogland, A. C. Tropper, and U. Keller, “Soliton-like pulse-shaping mechanism in passively mode-locked surface-emitting semiconductor lasers,” Appl. Phys. B 75, 445–451 (2002).
[Crossref]

A. Garnache, S. Hoogland, A. C. Tropper, I. Sagnes, G. Saint-Girons, and J. S. Roberts, “Sub-500-fs soliton-like pulse in a passively mode-locked broadband surface-emitting laser with 100 mW average power,” Appl. Phys. Lett. 80, 3892–3894 (2002).
[Crossref]

Tsuda, S.

S. Tsuda, W. H. Knox, S. T. Cundiff, W. Y. Jan, and J. E. Cunningham, “Mode-Locking Ultrafast Solid-State Lasers with Saturable Bragg Reflectors,” IEEE J. Sel. Top. Quantum Electron. 2, 454–464 (1996).
[Crossref]

Wang, S.

Weyers, M.

U. Zeimer, J. Grenzer, D. Korn, S. Döring, M. Zorn, W. Pittroff, U. Pietsch, F. Saas, and M. Weyers, “X-ray diffraction spot mapping - a tool to study structural properties of semiconductor disk laser devices,” phys. stat. sol. (a) 204, 2753–2759 (2007).
[Crossref]

F. Saas, V. Talalaev, U. Griebner, J. W. Tomm, M. Zorn, and M. Weyers, “Optically pumped semiconductor disk laser with graded and step indices,” Appl. Phys. Lett. 89, 151120 (2006).
[Crossref]

F. Saas, G. Steinmeyer, U. Griebner, M. Zorn, and M. Weyers, “Exciton resonance tuning for the generation of sub-picosecond pulses from a mode-locked semiconductor disk laser,” Appl. Phys. Lett. 89, 141107 (2006).
[Crossref]

Zeimer, U.

U. Zeimer, J. Grenzer, D. Korn, S. Döring, M. Zorn, W. Pittroff, U. Pietsch, F. Saas, and M. Weyers, “X-ray diffraction spot mapping - a tool to study structural properties of semiconductor disk laser devices,” phys. stat. sol. (a) 204, 2753–2759 (2007).
[Crossref]

Zeitschel, A.

J. L. Chilla, S. D. Butterworth, A. Zeitschel, J. P. Charles, A. L. Caprara, M. K. Reed, and L. Spinelli, “High power optically pumped semiconductor lasers,” in Solid State Lasers XIII: Technology and Devices, R. Scheps and H. J. Hoffman, eds., Proc. SPIE 5332, 143–150 (2004).
[Crossref]

Zorn, M.

U. Zeimer, J. Grenzer, D. Korn, S. Döring, M. Zorn, W. Pittroff, U. Pietsch, F. Saas, and M. Weyers, “X-ray diffraction spot mapping - a tool to study structural properties of semiconductor disk laser devices,” phys. stat. sol. (a) 204, 2753–2759 (2007).
[Crossref]

F. Saas, V. Talalaev, U. Griebner, J. W. Tomm, M. Zorn, and M. Weyers, “Optically pumped semiconductor disk laser with graded and step indices,” Appl. Phys. Lett. 89, 151120 (2006).
[Crossref]

F. Saas, G. Steinmeyer, U. Griebner, M. Zorn, and M. Weyers, “Exciton resonance tuning for the generation of sub-picosecond pulses from a mode-locked semiconductor disk laser,” Appl. Phys. Lett. 89, 141107 (2006).
[Crossref]

Appl. Phys. B (1)

R. Paschotta, R. Häring, A. Garnache, S. Hoogland, A. C. Tropper, and U. Keller, “Soliton-like pulse-shaping mechanism in passively mode-locked surface-emitting semiconductor lasers,” Appl. Phys. B 75, 445–451 (2002).
[Crossref]

Appl. Phys. Lett. (4)

A. Garnache, S. Hoogland, A. C. Tropper, I. Sagnes, G. Saint-Girons, and J. S. Roberts, “Sub-500-fs soliton-like pulse in a passively mode-locked broadband surface-emitting laser with 100 mW average power,” Appl. Phys. Lett. 80, 3892–3894 (2002).
[Crossref]

J. E. Hastie, L. G. Morton, A. J. Kemp, M. D. Dawson, A. B. Krysa, and J. S. Roberts, “Tunable ultraviolet output from an intracavity frequency-doubled red vertical-external-cavity surface-emitting laser,” Appl. Phys. Lett. 89, 061114 (2006).
[Crossref]

F. Saas, V. Talalaev, U. Griebner, J. W. Tomm, M. Zorn, and M. Weyers, “Optically pumped semiconductor disk laser with graded and step indices,” Appl. Phys. Lett. 89, 151120 (2006).
[Crossref]

F. Saas, G. Steinmeyer, U. Griebner, M. Zorn, and M. Weyers, “Exciton resonance tuning for the generation of sub-picosecond pulses from a mode-locked semiconductor disk laser,” Appl. Phys. Lett. 89, 141107 (2006).
[Crossref]

ChemPhysChem (1)

H. Kroemer, “Quasi-Electric Fields and Band Offsets: Teaching Electrons New Tricks (Nobel Lecture),” ChemPhysChem 2, 490–499 (2001).
[Crossref]

IEEE J. Sel. Top. Quantum Electron. (2)

S. Tsuda, W. H. Knox, S. T. Cundiff, W. Y. Jan, and J. E. Cunningham, “Mode-Locking Ultrafast Solid-State Lasers with Saturable Bragg Reflectors,” IEEE J. Sel. Top. Quantum Electron. 2, 454–464 (1996).
[Crossref]

M. Kuznetsov, F. Hakimi, R. Sprague, and A. Mooradian, “Design and Characteristics of High-Power (>0.5-W CW) Diode-Pumped Vertical-External-Cavity Surface-Emitting Semiconductor Lasers with Circular TEM00 Beams,” IEEE J. Sel. Top. Quantum Electron. 5, 561–573 (1999).
[Crossref]

IEEE Photon. Technol. Lett. (1)

S. Hoogland, A. Garnache, I. Sagnes, J. S. Roberts, and A. C. Tropper, “10-GHz Train of Sub-500-fs Optical Soliton-Like Pulses From a Surface-Emitting Semiconductor Laser,” IEEE Photon. Technol. Lett. 17, 267–269 (2005).
[Crossref]

J. Cryst. Growth (1)

L. Cerutti, A. Garnache, A. Ouvrard, and F. Genty, “High temperature continuous wave operation of Sb-based vertical external cavity surface emitting laser near 2.3 µm,” J. Cryst. Growth 268, 128–134 (2004).
[Crossref]

J. Opt. Soc. Am. B (2)

Opt. Express (1)

Opt. Lett. (1)

Phys. Rep. (1)

U. Keller and A. C. Tropper, “Passively modelocked surface-emitting semiconductor lasers,” Phys. Rep. 429, 67–120 (2006).
[Crossref]

Phys. Rev. A (1)

Y. Nomura, S. Ochi, N. Tomita, K. Akiyama, T. Isu, T. Takiguchi, and H. Higuchi, “Mode locking in Fabry-Perot semiconductor lasers,” Phys. Rev. A 65, 043807 (2002).
[Crossref]

phys. stat. sol. (a) (1)

U. Zeimer, J. Grenzer, D. Korn, S. Döring, M. Zorn, W. Pittroff, U. Pietsch, F. Saas, and M. Weyers, “X-ray diffraction spot mapping - a tool to study structural properties of semiconductor disk laser devices,” phys. stat. sol. (a) 204, 2753–2759 (2007).
[Crossref]

Proc. SPIE (1)

J. L. Chilla, S. D. Butterworth, A. Zeitschel, J. P. Charles, A. L. Caprara, M. K. Reed, and L. Spinelli, “High power optically pumped semiconductor lasers,” in Solid State Lasers XIII: Technology and Devices, R. Scheps and H. J. Hoffman, eds., Proc. SPIE 5332, 143–150 (2004).
[Crossref]

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Figures (4)

Fig. 1.
Fig. 1.

Schematic band gap diagram of a step index (STIN) (a) and a graded index (GRIN) (b) 4-QW gain structure design. Arrows mark the excitation photon energy. The red curves indicate the interference pattern formed by the incident and reflected 1036-nm-light beam.

Fig. 2.
Fig. 2.

Setup of the passively mode-locked semiconductor disk laser.

Fig. 3.
Fig. 3.

(a) Autocorrelation trace of the passively mode-locked semiconductor disk laser; τp : pulse duration, τpΔν: time-bandwidth product, τac : autocorrelation width. (b) Optical spectrum; Δλ: spectral width.

Fig. 4.
Fig. 4.

Radio frequency spectrum of the passively mode-locked semiconductor disk laser. (a) First beat note; (b) 7-GHz scan.

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