Abstract

The boundary conditions in Eq. (2) were used incorrectly, which influenced the numerical results in Fig. 3(a) correspondingly. The corrected calculated mode intensity profile matches better with the measured one.

© 2008 Optical Society of America

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References

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  1. Z. He, Y. Li, Y. Li, Y. Zhang, L. Liu, and Lei Xu, “Low-loss channel waveguides and Y-splitter formed by ion-exchange in silica-on-silicon,” Opt. Express 16, 3172–3177 (2008).
    [Crossref] [PubMed]

2008 (1)

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Figures (1)

Fig. 3.
Fig. 3.

The characteristic of channel waveguide. (a) Contours of the numerical simulation of mode intensity profile (dashed lines) and the near field intensity distribution at 1550 nm of the waveguide (solid lines), corresponding to 0.2, 0.4, 0.6 and 0.8 times the maximum mode intensity value. The background is the measured near field intensity of the channel waveguide; (b) Loss characteristic of the channel waveguide measured by cutback method at 1550 nm.

Equations (3)

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C A t = D ( 2 C A x 2 + 2 C A y 2 ) ,
{ C A ( x , 0 , t > 0 ) = C 0 for x w 2 , C A ( x , 0 , t > 0 ) y = 0 for x > w 2 , C A ( x , h , t > 0 ) y = 0 for < x < + ,
C A ( x , y , t = 0 ) = 0 for < x < + , y < 0 .

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