Abstract

We investigate temperature characteristics of 445-nm-emitting InGaN blue laser diodes (LDs) with several types of active-layer structures. The double quantum-well (QW) LD structures having an n-type doped barrier show negative or very high characteristic temperature depending on the barrier In composition. On the contrary, the double QW structures having an undoped barrier and the single QW structure show normal temperature dependence of LD characteristics. From the simulation of carrier density and optical gain, it is found that the anomalous temperature characteristics of blue LDs are closed related to the inhomogeneous hole distribution between QWs due to the low hole mobility of InGaN materials.

© 2008 Optical Society of America

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References

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  1. T. Kozaki, H. Matsumura, Y. Sugimoto, S. Nagahama, and T. Mukai, “High-power and wide wavelength range GaN-based laser diodes,” Proc. SPIE 6133, 613306 (2006).
    [Crossref]
  2. H. Y. Ryu, K. H. Ha, S. N. Lee, T. Jang, J. K. Son, H. S. Paek, Y. J. Sung, H. K. Kim, K. S. Kim, O. H. Nam, Y. Park, and J. I. Shim, “High-performance blue InGaN lase diodes with single-quantum-well active layers,” IEEE Photon. Technol. Lett. 19, 1717–1719 (2007).
    [Crossref]
  3. U. Strauß, S. Brüninghoff, M. Schillgalies, C. Vierheilig, N. Gmeinwieser, V. Kümmler, G. Brüderl, S. Lutgen, A. Avramescu, D. Queren, D. Dini, C. Eichler, A. Lell, and U. T. Schwarz, “True blue InGaN laser for pico size projectors,” Proc. SPIE 6894, 689417 (2008).
    [Crossref]
  4. T. Miyoshi, T. Kozaki, T. Yanamoto, Y. Fujimura, S. Nagahama, and T. Mukai, “GaN-based high-output-power blue laser diodes for display applications,” J. Soc. Inf. Display 15, 157–160 (2007).
    [Crossref]
  5. M. Ohta, Y. Ohizumi, Y. Hoshina, T. Tanaka, Y. Yabuki, K. Funato, S. Tomiya, S. Goto, and M. Ikeda, “High-power pure blue laser diodes,” Phys. Status Solidi (a) 203, 2068–2072 (2007).
    [Crossref]
  6. M. Kubota, K. Okamoto, T. Tanaka, and H. Ohta, “Continuous-wave operation of blue laser diodes based on nonpolar m-plane gallium nitride,” Appl. Phys. Express 1, 011102 (2008).
    [Crossref]
  7. M. Ikeda, T. Mizuno, M. Takeya, S. Goto, S. Ikeda, T. Fujimoto, Y. Ohfuji, and T. Hashizu, “High-power GaN-based semiconductor lasers,” Phys. Status Solidi State (c) 1, 1461–1467 (2004).
    [Crossref]
  8. M. Shono, Y. Nomura, and Y. Bessho, “High-power blue-violet laser diode fabricated on a GaN substrate,” Proc. SPIE 5365, 282 (2004).
    [Crossref]
  9. T. Świetlik, G. Franssen, P. Wiśniewski, S. Krukowski, S. P. Lepkowski, L. Marona, M. Leszczyński, P. Prystawko, I. Grzegory, T. Suski, S. Porowski, P. Perlin, R. Czernecki, A. Bering-Staniszewska, and P. G. Eliseev, “Anomalous temperature characteristics of single wide quantume well InGaN laser diode,” Appl. Phys. Lett. 88, 071121 (2006).
    [Crossref]
  10. H. Y. Ryu, K. H. Ha, S. N. Lee, T. Jang, H. K. Kim, J. H. Chae, K. S. Kim, K. K. Choi, J. K. Son, H. S. Paek, Y. J. Sung, T. Sakong, O. H. Nam, and Y. J. Park, “Highly stable temperature characteristics of InGaN blue laser diodes,” Appl. Phys. Lett. 89, 031122 (2006).
    [Crossref]
  11. Y. K. Kuo and Y. A. Chang, “Effects of electronic current overflow and inhomogeneous carrier distribution on InGaN quantum-well laser performance,” IEEE J. Quantum Electron. 40, 437–444 (2004).
    [Crossref]
  12. S. M. Thahab, H. Abu Hassan, and Z. Hassan, “Performance and optical characteristic of InGaN MQWs laser diodes,” Opt. Express 15, 2380–2390 (2007).
    [Crossref] [PubMed]
  13. H. Y. Ryu, K. H. Ha, J. H. Chae, O. H. Nam, and Y. J. Park, “Measurement of junction temperature in GaN-based laser diodes using voltage-temperature characteristics,” Appl. Phys. Lett. 87, 093506 (2005).
    [Crossref]
  14. J. Y. Chang and Y. K. Kuo, “Simulation of blue InGaN quantum-well lasers,” J. Appl. Phys. 93, 4992–4998 (2003).
    [Crossref]
  15. S. Uchida, M. Takeya, S. Ikeda, T. Mizuno, T. Fujimoto, O. Matsumoto, S. Goto, T. Tojyo, and M. Ikeda, “Recent progress in high-power blue-violet lasers,” IEEE J. Sel. Top Quantum Electron. 9, 1252–1259 (2003).
    [Crossref]
  16. J. Piprek and S. Nakamura, “Physics of high-power InGaN/GaN lasers,” IEE Proc. Optoelectron. 149, 145–151 (2002).
    [Crossref]
  17. S. H. Yen, Y. K. Kuo, M. L. Tsai, and T. C. Hsu, “Investigation of violet InGaN laser diodes with normal and reversed polarizations,” Appl. Phys. Lett. 91, 201118 (2007).
    [Crossref]
  18. H. Y. Ryu, “Effect of ridge shape on the fundamental single-mode operation of InGaN laser diode structures,” J. Korean Phys. Soc. 52, 1779–1785 (2008).
    [Crossref]
  19. I. Vurgaftman and J. R. Meyer, “Band parameters for nitrogen-containing semiconductors,” J. Appl. Phys. 94, 3675–3696 (2003).
    [Crossref]

2008 (3)

U. Strauß, S. Brüninghoff, M. Schillgalies, C. Vierheilig, N. Gmeinwieser, V. Kümmler, G. Brüderl, S. Lutgen, A. Avramescu, D. Queren, D. Dini, C. Eichler, A. Lell, and U. T. Schwarz, “True blue InGaN laser for pico size projectors,” Proc. SPIE 6894, 689417 (2008).
[Crossref]

M. Kubota, K. Okamoto, T. Tanaka, and H. Ohta, “Continuous-wave operation of blue laser diodes based on nonpolar m-plane gallium nitride,” Appl. Phys. Express 1, 011102 (2008).
[Crossref]

H. Y. Ryu, “Effect of ridge shape on the fundamental single-mode operation of InGaN laser diode structures,” J. Korean Phys. Soc. 52, 1779–1785 (2008).
[Crossref]

2007 (5)

S. H. Yen, Y. K. Kuo, M. L. Tsai, and T. C. Hsu, “Investigation of violet InGaN laser diodes with normal and reversed polarizations,” Appl. Phys. Lett. 91, 201118 (2007).
[Crossref]

S. M. Thahab, H. Abu Hassan, and Z. Hassan, “Performance and optical characteristic of InGaN MQWs laser diodes,” Opt. Express 15, 2380–2390 (2007).
[Crossref] [PubMed]

T. Miyoshi, T. Kozaki, T. Yanamoto, Y. Fujimura, S. Nagahama, and T. Mukai, “GaN-based high-output-power blue laser diodes for display applications,” J. Soc. Inf. Display 15, 157–160 (2007).
[Crossref]

M. Ohta, Y. Ohizumi, Y. Hoshina, T. Tanaka, Y. Yabuki, K. Funato, S. Tomiya, S. Goto, and M. Ikeda, “High-power pure blue laser diodes,” Phys. Status Solidi (a) 203, 2068–2072 (2007).
[Crossref]

H. Y. Ryu, K. H. Ha, S. N. Lee, T. Jang, J. K. Son, H. S. Paek, Y. J. Sung, H. K. Kim, K. S. Kim, O. H. Nam, Y. Park, and J. I. Shim, “High-performance blue InGaN lase diodes with single-quantum-well active layers,” IEEE Photon. Technol. Lett. 19, 1717–1719 (2007).
[Crossref]

2006 (3)

T. Kozaki, H. Matsumura, Y. Sugimoto, S. Nagahama, and T. Mukai, “High-power and wide wavelength range GaN-based laser diodes,” Proc. SPIE 6133, 613306 (2006).
[Crossref]

T. Świetlik, G. Franssen, P. Wiśniewski, S. Krukowski, S. P. Lepkowski, L. Marona, M. Leszczyński, P. Prystawko, I. Grzegory, T. Suski, S. Porowski, P. Perlin, R. Czernecki, A. Bering-Staniszewska, and P. G. Eliseev, “Anomalous temperature characteristics of single wide quantume well InGaN laser diode,” Appl. Phys. Lett. 88, 071121 (2006).
[Crossref]

H. Y. Ryu, K. H. Ha, S. N. Lee, T. Jang, H. K. Kim, J. H. Chae, K. S. Kim, K. K. Choi, J. K. Son, H. S. Paek, Y. J. Sung, T. Sakong, O. H. Nam, and Y. J. Park, “Highly stable temperature characteristics of InGaN blue laser diodes,” Appl. Phys. Lett. 89, 031122 (2006).
[Crossref]

2005 (1)

H. Y. Ryu, K. H. Ha, J. H. Chae, O. H. Nam, and Y. J. Park, “Measurement of junction temperature in GaN-based laser diodes using voltage-temperature characteristics,” Appl. Phys. Lett. 87, 093506 (2005).
[Crossref]

2004 (3)

Y. K. Kuo and Y. A. Chang, “Effects of electronic current overflow and inhomogeneous carrier distribution on InGaN quantum-well laser performance,” IEEE J. Quantum Electron. 40, 437–444 (2004).
[Crossref]

M. Ikeda, T. Mizuno, M. Takeya, S. Goto, S. Ikeda, T. Fujimoto, Y. Ohfuji, and T. Hashizu, “High-power GaN-based semiconductor lasers,” Phys. Status Solidi State (c) 1, 1461–1467 (2004).
[Crossref]

M. Shono, Y. Nomura, and Y. Bessho, “High-power blue-violet laser diode fabricated on a GaN substrate,” Proc. SPIE 5365, 282 (2004).
[Crossref]

2003 (3)

J. Y. Chang and Y. K. Kuo, “Simulation of blue InGaN quantum-well lasers,” J. Appl. Phys. 93, 4992–4998 (2003).
[Crossref]

S. Uchida, M. Takeya, S. Ikeda, T. Mizuno, T. Fujimoto, O. Matsumoto, S. Goto, T. Tojyo, and M. Ikeda, “Recent progress in high-power blue-violet lasers,” IEEE J. Sel. Top Quantum Electron. 9, 1252–1259 (2003).
[Crossref]

I. Vurgaftman and J. R. Meyer, “Band parameters for nitrogen-containing semiconductors,” J. Appl. Phys. 94, 3675–3696 (2003).
[Crossref]

2002 (1)

J. Piprek and S. Nakamura, “Physics of high-power InGaN/GaN lasers,” IEE Proc. Optoelectron. 149, 145–151 (2002).
[Crossref]

Avramescu, A.

U. Strauß, S. Brüninghoff, M. Schillgalies, C. Vierheilig, N. Gmeinwieser, V. Kümmler, G. Brüderl, S. Lutgen, A. Avramescu, D. Queren, D. Dini, C. Eichler, A. Lell, and U. T. Schwarz, “True blue InGaN laser for pico size projectors,” Proc. SPIE 6894, 689417 (2008).
[Crossref]

Bering-Staniszewska, A.

T. Świetlik, G. Franssen, P. Wiśniewski, S. Krukowski, S. P. Lepkowski, L. Marona, M. Leszczyński, P. Prystawko, I. Grzegory, T. Suski, S. Porowski, P. Perlin, R. Czernecki, A. Bering-Staniszewska, and P. G. Eliseev, “Anomalous temperature characteristics of single wide quantume well InGaN laser diode,” Appl. Phys. Lett. 88, 071121 (2006).
[Crossref]

Bessho, Y.

M. Shono, Y. Nomura, and Y. Bessho, “High-power blue-violet laser diode fabricated on a GaN substrate,” Proc. SPIE 5365, 282 (2004).
[Crossref]

Brüderl, G.

U. Strauß, S. Brüninghoff, M. Schillgalies, C. Vierheilig, N. Gmeinwieser, V. Kümmler, G. Brüderl, S. Lutgen, A. Avramescu, D. Queren, D. Dini, C. Eichler, A. Lell, and U. T. Schwarz, “True blue InGaN laser for pico size projectors,” Proc. SPIE 6894, 689417 (2008).
[Crossref]

Brüninghoff, S.

U. Strauß, S. Brüninghoff, M. Schillgalies, C. Vierheilig, N. Gmeinwieser, V. Kümmler, G. Brüderl, S. Lutgen, A. Avramescu, D. Queren, D. Dini, C. Eichler, A. Lell, and U. T. Schwarz, “True blue InGaN laser for pico size projectors,” Proc. SPIE 6894, 689417 (2008).
[Crossref]

Chae, J. H.

H. Y. Ryu, K. H. Ha, S. N. Lee, T. Jang, H. K. Kim, J. H. Chae, K. S. Kim, K. K. Choi, J. K. Son, H. S. Paek, Y. J. Sung, T. Sakong, O. H. Nam, and Y. J. Park, “Highly stable temperature characteristics of InGaN blue laser diodes,” Appl. Phys. Lett. 89, 031122 (2006).
[Crossref]

H. Y. Ryu, K. H. Ha, J. H. Chae, O. H. Nam, and Y. J. Park, “Measurement of junction temperature in GaN-based laser diodes using voltage-temperature characteristics,” Appl. Phys. Lett. 87, 093506 (2005).
[Crossref]

Chang, J. Y.

J. Y. Chang and Y. K. Kuo, “Simulation of blue InGaN quantum-well lasers,” J. Appl. Phys. 93, 4992–4998 (2003).
[Crossref]

Chang, Y. A.

Y. K. Kuo and Y. A. Chang, “Effects of electronic current overflow and inhomogeneous carrier distribution on InGaN quantum-well laser performance,” IEEE J. Quantum Electron. 40, 437–444 (2004).
[Crossref]

Choi, K. K.

H. Y. Ryu, K. H. Ha, S. N. Lee, T. Jang, H. K. Kim, J. H. Chae, K. S. Kim, K. K. Choi, J. K. Son, H. S. Paek, Y. J. Sung, T. Sakong, O. H. Nam, and Y. J. Park, “Highly stable temperature characteristics of InGaN blue laser diodes,” Appl. Phys. Lett. 89, 031122 (2006).
[Crossref]

Czernecki, R.

T. Świetlik, G. Franssen, P. Wiśniewski, S. Krukowski, S. P. Lepkowski, L. Marona, M. Leszczyński, P. Prystawko, I. Grzegory, T. Suski, S. Porowski, P. Perlin, R. Czernecki, A. Bering-Staniszewska, and P. G. Eliseev, “Anomalous temperature characteristics of single wide quantume well InGaN laser diode,” Appl. Phys. Lett. 88, 071121 (2006).
[Crossref]

Dini, D.

U. Strauß, S. Brüninghoff, M. Schillgalies, C. Vierheilig, N. Gmeinwieser, V. Kümmler, G. Brüderl, S. Lutgen, A. Avramescu, D. Queren, D. Dini, C. Eichler, A. Lell, and U. T. Schwarz, “True blue InGaN laser for pico size projectors,” Proc. SPIE 6894, 689417 (2008).
[Crossref]

Eichler, C.

U. Strauß, S. Brüninghoff, M. Schillgalies, C. Vierheilig, N. Gmeinwieser, V. Kümmler, G. Brüderl, S. Lutgen, A. Avramescu, D. Queren, D. Dini, C. Eichler, A. Lell, and U. T. Schwarz, “True blue InGaN laser for pico size projectors,” Proc. SPIE 6894, 689417 (2008).
[Crossref]

Eliseev, P. G.

T. Świetlik, G. Franssen, P. Wiśniewski, S. Krukowski, S. P. Lepkowski, L. Marona, M. Leszczyński, P. Prystawko, I. Grzegory, T. Suski, S. Porowski, P. Perlin, R. Czernecki, A. Bering-Staniszewska, and P. G. Eliseev, “Anomalous temperature characteristics of single wide quantume well InGaN laser diode,” Appl. Phys. Lett. 88, 071121 (2006).
[Crossref]

Franssen, G.

T. Świetlik, G. Franssen, P. Wiśniewski, S. Krukowski, S. P. Lepkowski, L. Marona, M. Leszczyński, P. Prystawko, I. Grzegory, T. Suski, S. Porowski, P. Perlin, R. Czernecki, A. Bering-Staniszewska, and P. G. Eliseev, “Anomalous temperature characteristics of single wide quantume well InGaN laser diode,” Appl. Phys. Lett. 88, 071121 (2006).
[Crossref]

Fujimoto, T.

M. Ikeda, T. Mizuno, M. Takeya, S. Goto, S. Ikeda, T. Fujimoto, Y. Ohfuji, and T. Hashizu, “High-power GaN-based semiconductor lasers,” Phys. Status Solidi State (c) 1, 1461–1467 (2004).
[Crossref]

S. Uchida, M. Takeya, S. Ikeda, T. Mizuno, T. Fujimoto, O. Matsumoto, S. Goto, T. Tojyo, and M. Ikeda, “Recent progress in high-power blue-violet lasers,” IEEE J. Sel. Top Quantum Electron. 9, 1252–1259 (2003).
[Crossref]

Fujimura, Y.

T. Miyoshi, T. Kozaki, T. Yanamoto, Y. Fujimura, S. Nagahama, and T. Mukai, “GaN-based high-output-power blue laser diodes for display applications,” J. Soc. Inf. Display 15, 157–160 (2007).
[Crossref]

Funato, K.

M. Ohta, Y. Ohizumi, Y. Hoshina, T. Tanaka, Y. Yabuki, K. Funato, S. Tomiya, S. Goto, and M. Ikeda, “High-power pure blue laser diodes,” Phys. Status Solidi (a) 203, 2068–2072 (2007).
[Crossref]

Gmeinwieser, N.

U. Strauß, S. Brüninghoff, M. Schillgalies, C. Vierheilig, N. Gmeinwieser, V. Kümmler, G. Brüderl, S. Lutgen, A. Avramescu, D. Queren, D. Dini, C. Eichler, A. Lell, and U. T. Schwarz, “True blue InGaN laser for pico size projectors,” Proc. SPIE 6894, 689417 (2008).
[Crossref]

Goto, S.

M. Ohta, Y. Ohizumi, Y. Hoshina, T. Tanaka, Y. Yabuki, K. Funato, S. Tomiya, S. Goto, and M. Ikeda, “High-power pure blue laser diodes,” Phys. Status Solidi (a) 203, 2068–2072 (2007).
[Crossref]

M. Ikeda, T. Mizuno, M. Takeya, S. Goto, S. Ikeda, T. Fujimoto, Y. Ohfuji, and T. Hashizu, “High-power GaN-based semiconductor lasers,” Phys. Status Solidi State (c) 1, 1461–1467 (2004).
[Crossref]

S. Uchida, M. Takeya, S. Ikeda, T. Mizuno, T. Fujimoto, O. Matsumoto, S. Goto, T. Tojyo, and M. Ikeda, “Recent progress in high-power blue-violet lasers,” IEEE J. Sel. Top Quantum Electron. 9, 1252–1259 (2003).
[Crossref]

Grzegory, I.

T. Świetlik, G. Franssen, P. Wiśniewski, S. Krukowski, S. P. Lepkowski, L. Marona, M. Leszczyński, P. Prystawko, I. Grzegory, T. Suski, S. Porowski, P. Perlin, R. Czernecki, A. Bering-Staniszewska, and P. G. Eliseev, “Anomalous temperature characteristics of single wide quantume well InGaN laser diode,” Appl. Phys. Lett. 88, 071121 (2006).
[Crossref]

Ha, K. H.

H. Y. Ryu, K. H. Ha, S. N. Lee, T. Jang, J. K. Son, H. S. Paek, Y. J. Sung, H. K. Kim, K. S. Kim, O. H. Nam, Y. Park, and J. I. Shim, “High-performance blue InGaN lase diodes with single-quantum-well active layers,” IEEE Photon. Technol. Lett. 19, 1717–1719 (2007).
[Crossref]

H. Y. Ryu, K. H. Ha, S. N. Lee, T. Jang, H. K. Kim, J. H. Chae, K. S. Kim, K. K. Choi, J. K. Son, H. S. Paek, Y. J. Sung, T. Sakong, O. H. Nam, and Y. J. Park, “Highly stable temperature characteristics of InGaN blue laser diodes,” Appl. Phys. Lett. 89, 031122 (2006).
[Crossref]

H. Y. Ryu, K. H. Ha, J. H. Chae, O. H. Nam, and Y. J. Park, “Measurement of junction temperature in GaN-based laser diodes using voltage-temperature characteristics,” Appl. Phys. Lett. 87, 093506 (2005).
[Crossref]

Hashizu, T.

M. Ikeda, T. Mizuno, M. Takeya, S. Goto, S. Ikeda, T. Fujimoto, Y. Ohfuji, and T. Hashizu, “High-power GaN-based semiconductor lasers,” Phys. Status Solidi State (c) 1, 1461–1467 (2004).
[Crossref]

Hassan, H. Abu

Hassan, Z.

Hoshina, Y.

M. Ohta, Y. Ohizumi, Y. Hoshina, T. Tanaka, Y. Yabuki, K. Funato, S. Tomiya, S. Goto, and M. Ikeda, “High-power pure blue laser diodes,” Phys. Status Solidi (a) 203, 2068–2072 (2007).
[Crossref]

Hsu, T. C.

S. H. Yen, Y. K. Kuo, M. L. Tsai, and T. C. Hsu, “Investigation of violet InGaN laser diodes with normal and reversed polarizations,” Appl. Phys. Lett. 91, 201118 (2007).
[Crossref]

Ikeda, M.

M. Ohta, Y. Ohizumi, Y. Hoshina, T. Tanaka, Y. Yabuki, K. Funato, S. Tomiya, S. Goto, and M. Ikeda, “High-power pure blue laser diodes,” Phys. Status Solidi (a) 203, 2068–2072 (2007).
[Crossref]

M. Ikeda, T. Mizuno, M. Takeya, S. Goto, S. Ikeda, T. Fujimoto, Y. Ohfuji, and T. Hashizu, “High-power GaN-based semiconductor lasers,” Phys. Status Solidi State (c) 1, 1461–1467 (2004).
[Crossref]

S. Uchida, M. Takeya, S. Ikeda, T. Mizuno, T. Fujimoto, O. Matsumoto, S. Goto, T. Tojyo, and M. Ikeda, “Recent progress in high-power blue-violet lasers,” IEEE J. Sel. Top Quantum Electron. 9, 1252–1259 (2003).
[Crossref]

Ikeda, S.

M. Ikeda, T. Mizuno, M. Takeya, S. Goto, S. Ikeda, T. Fujimoto, Y. Ohfuji, and T. Hashizu, “High-power GaN-based semiconductor lasers,” Phys. Status Solidi State (c) 1, 1461–1467 (2004).
[Crossref]

S. Uchida, M. Takeya, S. Ikeda, T. Mizuno, T. Fujimoto, O. Matsumoto, S. Goto, T. Tojyo, and M. Ikeda, “Recent progress in high-power blue-violet lasers,” IEEE J. Sel. Top Quantum Electron. 9, 1252–1259 (2003).
[Crossref]

Jang, T.

H. Y. Ryu, K. H. Ha, S. N. Lee, T. Jang, J. K. Son, H. S. Paek, Y. J. Sung, H. K. Kim, K. S. Kim, O. H. Nam, Y. Park, and J. I. Shim, “High-performance blue InGaN lase diodes with single-quantum-well active layers,” IEEE Photon. Technol. Lett. 19, 1717–1719 (2007).
[Crossref]

H. Y. Ryu, K. H. Ha, S. N. Lee, T. Jang, H. K. Kim, J. H. Chae, K. S. Kim, K. K. Choi, J. K. Son, H. S. Paek, Y. J. Sung, T. Sakong, O. H. Nam, and Y. J. Park, “Highly stable temperature characteristics of InGaN blue laser diodes,” Appl. Phys. Lett. 89, 031122 (2006).
[Crossref]

Kim, H. K.

H. Y. Ryu, K. H. Ha, S. N. Lee, T. Jang, J. K. Son, H. S. Paek, Y. J. Sung, H. K. Kim, K. S. Kim, O. H. Nam, Y. Park, and J. I. Shim, “High-performance blue InGaN lase diodes with single-quantum-well active layers,” IEEE Photon. Technol. Lett. 19, 1717–1719 (2007).
[Crossref]

H. Y. Ryu, K. H. Ha, S. N. Lee, T. Jang, H. K. Kim, J. H. Chae, K. S. Kim, K. K. Choi, J. K. Son, H. S. Paek, Y. J. Sung, T. Sakong, O. H. Nam, and Y. J. Park, “Highly stable temperature characteristics of InGaN blue laser diodes,” Appl. Phys. Lett. 89, 031122 (2006).
[Crossref]

Kim, K. S.

H. Y. Ryu, K. H. Ha, S. N. Lee, T. Jang, J. K. Son, H. S. Paek, Y. J. Sung, H. K. Kim, K. S. Kim, O. H. Nam, Y. Park, and J. I. Shim, “High-performance blue InGaN lase diodes with single-quantum-well active layers,” IEEE Photon. Technol. Lett. 19, 1717–1719 (2007).
[Crossref]

H. Y. Ryu, K. H. Ha, S. N. Lee, T. Jang, H. K. Kim, J. H. Chae, K. S. Kim, K. K. Choi, J. K. Son, H. S. Paek, Y. J. Sung, T. Sakong, O. H. Nam, and Y. J. Park, “Highly stable temperature characteristics of InGaN blue laser diodes,” Appl. Phys. Lett. 89, 031122 (2006).
[Crossref]

Kozaki, T.

T. Miyoshi, T. Kozaki, T. Yanamoto, Y. Fujimura, S. Nagahama, and T. Mukai, “GaN-based high-output-power blue laser diodes for display applications,” J. Soc. Inf. Display 15, 157–160 (2007).
[Crossref]

T. Kozaki, H. Matsumura, Y. Sugimoto, S. Nagahama, and T. Mukai, “High-power and wide wavelength range GaN-based laser diodes,” Proc. SPIE 6133, 613306 (2006).
[Crossref]

Krukowski, S.

T. Świetlik, G. Franssen, P. Wiśniewski, S. Krukowski, S. P. Lepkowski, L. Marona, M. Leszczyński, P. Prystawko, I. Grzegory, T. Suski, S. Porowski, P. Perlin, R. Czernecki, A. Bering-Staniszewska, and P. G. Eliseev, “Anomalous temperature characteristics of single wide quantume well InGaN laser diode,” Appl. Phys. Lett. 88, 071121 (2006).
[Crossref]

Kubota, M.

M. Kubota, K. Okamoto, T. Tanaka, and H. Ohta, “Continuous-wave operation of blue laser diodes based on nonpolar m-plane gallium nitride,” Appl. Phys. Express 1, 011102 (2008).
[Crossref]

Kümmler, V.

U. Strauß, S. Brüninghoff, M. Schillgalies, C. Vierheilig, N. Gmeinwieser, V. Kümmler, G. Brüderl, S. Lutgen, A. Avramescu, D. Queren, D. Dini, C. Eichler, A. Lell, and U. T. Schwarz, “True blue InGaN laser for pico size projectors,” Proc. SPIE 6894, 689417 (2008).
[Crossref]

Kuo, Y. K.

S. H. Yen, Y. K. Kuo, M. L. Tsai, and T. C. Hsu, “Investigation of violet InGaN laser diodes with normal and reversed polarizations,” Appl. Phys. Lett. 91, 201118 (2007).
[Crossref]

Y. K. Kuo and Y. A. Chang, “Effects of electronic current overflow and inhomogeneous carrier distribution on InGaN quantum-well laser performance,” IEEE J. Quantum Electron. 40, 437–444 (2004).
[Crossref]

J. Y. Chang and Y. K. Kuo, “Simulation of blue InGaN quantum-well lasers,” J. Appl. Phys. 93, 4992–4998 (2003).
[Crossref]

Lee, S. N.

H. Y. Ryu, K. H. Ha, S. N. Lee, T. Jang, J. K. Son, H. S. Paek, Y. J. Sung, H. K. Kim, K. S. Kim, O. H. Nam, Y. Park, and J. I. Shim, “High-performance blue InGaN lase diodes with single-quantum-well active layers,” IEEE Photon. Technol. Lett. 19, 1717–1719 (2007).
[Crossref]

H. Y. Ryu, K. H. Ha, S. N. Lee, T. Jang, H. K. Kim, J. H. Chae, K. S. Kim, K. K. Choi, J. K. Son, H. S. Paek, Y. J. Sung, T. Sakong, O. H. Nam, and Y. J. Park, “Highly stable temperature characteristics of InGaN blue laser diodes,” Appl. Phys. Lett. 89, 031122 (2006).
[Crossref]

Lell, A.

U. Strauß, S. Brüninghoff, M. Schillgalies, C. Vierheilig, N. Gmeinwieser, V. Kümmler, G. Brüderl, S. Lutgen, A. Avramescu, D. Queren, D. Dini, C. Eichler, A. Lell, and U. T. Schwarz, “True blue InGaN laser for pico size projectors,” Proc. SPIE 6894, 689417 (2008).
[Crossref]

Lepkowski, S. P.

T. Świetlik, G. Franssen, P. Wiśniewski, S. Krukowski, S. P. Lepkowski, L. Marona, M. Leszczyński, P. Prystawko, I. Grzegory, T. Suski, S. Porowski, P. Perlin, R. Czernecki, A. Bering-Staniszewska, and P. G. Eliseev, “Anomalous temperature characteristics of single wide quantume well InGaN laser diode,” Appl. Phys. Lett. 88, 071121 (2006).
[Crossref]

Leszczynski, M.

T. Świetlik, G. Franssen, P. Wiśniewski, S. Krukowski, S. P. Lepkowski, L. Marona, M. Leszczyński, P. Prystawko, I. Grzegory, T. Suski, S. Porowski, P. Perlin, R. Czernecki, A. Bering-Staniszewska, and P. G. Eliseev, “Anomalous temperature characteristics of single wide quantume well InGaN laser diode,” Appl. Phys. Lett. 88, 071121 (2006).
[Crossref]

Lutgen, S.

U. Strauß, S. Brüninghoff, M. Schillgalies, C. Vierheilig, N. Gmeinwieser, V. Kümmler, G. Brüderl, S. Lutgen, A. Avramescu, D. Queren, D. Dini, C. Eichler, A. Lell, and U. T. Schwarz, “True blue InGaN laser for pico size projectors,” Proc. SPIE 6894, 689417 (2008).
[Crossref]

Marona, L.

T. Świetlik, G. Franssen, P. Wiśniewski, S. Krukowski, S. P. Lepkowski, L. Marona, M. Leszczyński, P. Prystawko, I. Grzegory, T. Suski, S. Porowski, P. Perlin, R. Czernecki, A. Bering-Staniszewska, and P. G. Eliseev, “Anomalous temperature characteristics of single wide quantume well InGaN laser diode,” Appl. Phys. Lett. 88, 071121 (2006).
[Crossref]

Matsumoto, O.

S. Uchida, M. Takeya, S. Ikeda, T. Mizuno, T. Fujimoto, O. Matsumoto, S. Goto, T. Tojyo, and M. Ikeda, “Recent progress in high-power blue-violet lasers,” IEEE J. Sel. Top Quantum Electron. 9, 1252–1259 (2003).
[Crossref]

Matsumura, H.

T. Kozaki, H. Matsumura, Y. Sugimoto, S. Nagahama, and T. Mukai, “High-power and wide wavelength range GaN-based laser diodes,” Proc. SPIE 6133, 613306 (2006).
[Crossref]

Meyer, J. R.

I. Vurgaftman and J. R. Meyer, “Band parameters for nitrogen-containing semiconductors,” J. Appl. Phys. 94, 3675–3696 (2003).
[Crossref]

Miyoshi, T.

T. Miyoshi, T. Kozaki, T. Yanamoto, Y. Fujimura, S. Nagahama, and T. Mukai, “GaN-based high-output-power blue laser diodes for display applications,” J. Soc. Inf. Display 15, 157–160 (2007).
[Crossref]

Mizuno, T.

M. Ikeda, T. Mizuno, M. Takeya, S. Goto, S. Ikeda, T. Fujimoto, Y. Ohfuji, and T. Hashizu, “High-power GaN-based semiconductor lasers,” Phys. Status Solidi State (c) 1, 1461–1467 (2004).
[Crossref]

S. Uchida, M. Takeya, S. Ikeda, T. Mizuno, T. Fujimoto, O. Matsumoto, S. Goto, T. Tojyo, and M. Ikeda, “Recent progress in high-power blue-violet lasers,” IEEE J. Sel. Top Quantum Electron. 9, 1252–1259 (2003).
[Crossref]

Mukai, T.

T. Miyoshi, T. Kozaki, T. Yanamoto, Y. Fujimura, S. Nagahama, and T. Mukai, “GaN-based high-output-power blue laser diodes for display applications,” J. Soc. Inf. Display 15, 157–160 (2007).
[Crossref]

T. Kozaki, H. Matsumura, Y. Sugimoto, S. Nagahama, and T. Mukai, “High-power and wide wavelength range GaN-based laser diodes,” Proc. SPIE 6133, 613306 (2006).
[Crossref]

Nagahama, S.

T. Miyoshi, T. Kozaki, T. Yanamoto, Y. Fujimura, S. Nagahama, and T. Mukai, “GaN-based high-output-power blue laser diodes for display applications,” J. Soc. Inf. Display 15, 157–160 (2007).
[Crossref]

T. Kozaki, H. Matsumura, Y. Sugimoto, S. Nagahama, and T. Mukai, “High-power and wide wavelength range GaN-based laser diodes,” Proc. SPIE 6133, 613306 (2006).
[Crossref]

Nakamura, S.

J. Piprek and S. Nakamura, “Physics of high-power InGaN/GaN lasers,” IEE Proc. Optoelectron. 149, 145–151 (2002).
[Crossref]

Nam, O. H.

H. Y. Ryu, K. H. Ha, S. N. Lee, T. Jang, J. K. Son, H. S. Paek, Y. J. Sung, H. K. Kim, K. S. Kim, O. H. Nam, Y. Park, and J. I. Shim, “High-performance blue InGaN lase diodes with single-quantum-well active layers,” IEEE Photon. Technol. Lett. 19, 1717–1719 (2007).
[Crossref]

H. Y. Ryu, K. H. Ha, S. N. Lee, T. Jang, H. K. Kim, J. H. Chae, K. S. Kim, K. K. Choi, J. K. Son, H. S. Paek, Y. J. Sung, T. Sakong, O. H. Nam, and Y. J. Park, “Highly stable temperature characteristics of InGaN blue laser diodes,” Appl. Phys. Lett. 89, 031122 (2006).
[Crossref]

H. Y. Ryu, K. H. Ha, J. H. Chae, O. H. Nam, and Y. J. Park, “Measurement of junction temperature in GaN-based laser diodes using voltage-temperature characteristics,” Appl. Phys. Lett. 87, 093506 (2005).
[Crossref]

Nomura, Y.

M. Shono, Y. Nomura, and Y. Bessho, “High-power blue-violet laser diode fabricated on a GaN substrate,” Proc. SPIE 5365, 282 (2004).
[Crossref]

Ohfuji, Y.

M. Ikeda, T. Mizuno, M. Takeya, S. Goto, S. Ikeda, T. Fujimoto, Y. Ohfuji, and T. Hashizu, “High-power GaN-based semiconductor lasers,” Phys. Status Solidi State (c) 1, 1461–1467 (2004).
[Crossref]

Ohizumi, Y.

M. Ohta, Y. Ohizumi, Y. Hoshina, T. Tanaka, Y. Yabuki, K. Funato, S. Tomiya, S. Goto, and M. Ikeda, “High-power pure blue laser diodes,” Phys. Status Solidi (a) 203, 2068–2072 (2007).
[Crossref]

Ohta, H.

M. Kubota, K. Okamoto, T. Tanaka, and H. Ohta, “Continuous-wave operation of blue laser diodes based on nonpolar m-plane gallium nitride,” Appl. Phys. Express 1, 011102 (2008).
[Crossref]

Ohta, M.

M. Ohta, Y. Ohizumi, Y. Hoshina, T. Tanaka, Y. Yabuki, K. Funato, S. Tomiya, S. Goto, and M. Ikeda, “High-power pure blue laser diodes,” Phys. Status Solidi (a) 203, 2068–2072 (2007).
[Crossref]

Okamoto, K.

M. Kubota, K. Okamoto, T. Tanaka, and H. Ohta, “Continuous-wave operation of blue laser diodes based on nonpolar m-plane gallium nitride,” Appl. Phys. Express 1, 011102 (2008).
[Crossref]

Paek, H. S.

H. Y. Ryu, K. H. Ha, S. N. Lee, T. Jang, J. K. Son, H. S. Paek, Y. J. Sung, H. K. Kim, K. S. Kim, O. H. Nam, Y. Park, and J. I. Shim, “High-performance blue InGaN lase diodes with single-quantum-well active layers,” IEEE Photon. Technol. Lett. 19, 1717–1719 (2007).
[Crossref]

H. Y. Ryu, K. H. Ha, S. N. Lee, T. Jang, H. K. Kim, J. H. Chae, K. S. Kim, K. K. Choi, J. K. Son, H. S. Paek, Y. J. Sung, T. Sakong, O. H. Nam, and Y. J. Park, “Highly stable temperature characteristics of InGaN blue laser diodes,” Appl. Phys. Lett. 89, 031122 (2006).
[Crossref]

Park, Y.

H. Y. Ryu, K. H. Ha, S. N. Lee, T. Jang, J. K. Son, H. S. Paek, Y. J. Sung, H. K. Kim, K. S. Kim, O. H. Nam, Y. Park, and J. I. Shim, “High-performance blue InGaN lase diodes with single-quantum-well active layers,” IEEE Photon. Technol. Lett. 19, 1717–1719 (2007).
[Crossref]

Park, Y. J.

H. Y. Ryu, K. H. Ha, S. N. Lee, T. Jang, H. K. Kim, J. H. Chae, K. S. Kim, K. K. Choi, J. K. Son, H. S. Paek, Y. J. Sung, T. Sakong, O. H. Nam, and Y. J. Park, “Highly stable temperature characteristics of InGaN blue laser diodes,” Appl. Phys. Lett. 89, 031122 (2006).
[Crossref]

H. Y. Ryu, K. H. Ha, J. H. Chae, O. H. Nam, and Y. J. Park, “Measurement of junction temperature in GaN-based laser diodes using voltage-temperature characteristics,” Appl. Phys. Lett. 87, 093506 (2005).
[Crossref]

Perlin, P.

T. Świetlik, G. Franssen, P. Wiśniewski, S. Krukowski, S. P. Lepkowski, L. Marona, M. Leszczyński, P. Prystawko, I. Grzegory, T. Suski, S. Porowski, P. Perlin, R. Czernecki, A. Bering-Staniszewska, and P. G. Eliseev, “Anomalous temperature characteristics of single wide quantume well InGaN laser diode,” Appl. Phys. Lett. 88, 071121 (2006).
[Crossref]

Piprek, J.

J. Piprek and S. Nakamura, “Physics of high-power InGaN/GaN lasers,” IEE Proc. Optoelectron. 149, 145–151 (2002).
[Crossref]

Porowski, S.

T. Świetlik, G. Franssen, P. Wiśniewski, S. Krukowski, S. P. Lepkowski, L. Marona, M. Leszczyński, P. Prystawko, I. Grzegory, T. Suski, S. Porowski, P. Perlin, R. Czernecki, A. Bering-Staniszewska, and P. G. Eliseev, “Anomalous temperature characteristics of single wide quantume well InGaN laser diode,” Appl. Phys. Lett. 88, 071121 (2006).
[Crossref]

Prystawko, P.

T. Świetlik, G. Franssen, P. Wiśniewski, S. Krukowski, S. P. Lepkowski, L. Marona, M. Leszczyński, P. Prystawko, I. Grzegory, T. Suski, S. Porowski, P. Perlin, R. Czernecki, A. Bering-Staniszewska, and P. G. Eliseev, “Anomalous temperature characteristics of single wide quantume well InGaN laser diode,” Appl. Phys. Lett. 88, 071121 (2006).
[Crossref]

Queren, D.

U. Strauß, S. Brüninghoff, M. Schillgalies, C. Vierheilig, N. Gmeinwieser, V. Kümmler, G. Brüderl, S. Lutgen, A. Avramescu, D. Queren, D. Dini, C. Eichler, A. Lell, and U. T. Schwarz, “True blue InGaN laser for pico size projectors,” Proc. SPIE 6894, 689417 (2008).
[Crossref]

Ryu, H. Y.

H. Y. Ryu, “Effect of ridge shape on the fundamental single-mode operation of InGaN laser diode structures,” J. Korean Phys. Soc. 52, 1779–1785 (2008).
[Crossref]

H. Y. Ryu, K. H. Ha, S. N. Lee, T. Jang, J. K. Son, H. S. Paek, Y. J. Sung, H. K. Kim, K. S. Kim, O. H. Nam, Y. Park, and J. I. Shim, “High-performance blue InGaN lase diodes with single-quantum-well active layers,” IEEE Photon. Technol. Lett. 19, 1717–1719 (2007).
[Crossref]

H. Y. Ryu, K. H. Ha, S. N. Lee, T. Jang, H. K. Kim, J. H. Chae, K. S. Kim, K. K. Choi, J. K. Son, H. S. Paek, Y. J. Sung, T. Sakong, O. H. Nam, and Y. J. Park, “Highly stable temperature characteristics of InGaN blue laser diodes,” Appl. Phys. Lett. 89, 031122 (2006).
[Crossref]

H. Y. Ryu, K. H. Ha, J. H. Chae, O. H. Nam, and Y. J. Park, “Measurement of junction temperature in GaN-based laser diodes using voltage-temperature characteristics,” Appl. Phys. Lett. 87, 093506 (2005).
[Crossref]

Sakong, T.

H. Y. Ryu, K. H. Ha, S. N. Lee, T. Jang, H. K. Kim, J. H. Chae, K. S. Kim, K. K. Choi, J. K. Son, H. S. Paek, Y. J. Sung, T. Sakong, O. H. Nam, and Y. J. Park, “Highly stable temperature characteristics of InGaN blue laser diodes,” Appl. Phys. Lett. 89, 031122 (2006).
[Crossref]

Schillgalies, M.

U. Strauß, S. Brüninghoff, M. Schillgalies, C. Vierheilig, N. Gmeinwieser, V. Kümmler, G. Brüderl, S. Lutgen, A. Avramescu, D. Queren, D. Dini, C. Eichler, A. Lell, and U. T. Schwarz, “True blue InGaN laser for pico size projectors,” Proc. SPIE 6894, 689417 (2008).
[Crossref]

Schwarz, U. T.

U. Strauß, S. Brüninghoff, M. Schillgalies, C. Vierheilig, N. Gmeinwieser, V. Kümmler, G. Brüderl, S. Lutgen, A. Avramescu, D. Queren, D. Dini, C. Eichler, A. Lell, and U. T. Schwarz, “True blue InGaN laser for pico size projectors,” Proc. SPIE 6894, 689417 (2008).
[Crossref]

Shim, J. I.

H. Y. Ryu, K. H. Ha, S. N. Lee, T. Jang, J. K. Son, H. S. Paek, Y. J. Sung, H. K. Kim, K. S. Kim, O. H. Nam, Y. Park, and J. I. Shim, “High-performance blue InGaN lase diodes with single-quantum-well active layers,” IEEE Photon. Technol. Lett. 19, 1717–1719 (2007).
[Crossref]

Shono, M.

M. Shono, Y. Nomura, and Y. Bessho, “High-power blue-violet laser diode fabricated on a GaN substrate,” Proc. SPIE 5365, 282 (2004).
[Crossref]

Son, J. K.

H. Y. Ryu, K. H. Ha, S. N. Lee, T. Jang, J. K. Son, H. S. Paek, Y. J. Sung, H. K. Kim, K. S. Kim, O. H. Nam, Y. Park, and J. I. Shim, “High-performance blue InGaN lase diodes with single-quantum-well active layers,” IEEE Photon. Technol. Lett. 19, 1717–1719 (2007).
[Crossref]

H. Y. Ryu, K. H. Ha, S. N. Lee, T. Jang, H. K. Kim, J. H. Chae, K. S. Kim, K. K. Choi, J. K. Son, H. S. Paek, Y. J. Sung, T. Sakong, O. H. Nam, and Y. J. Park, “Highly stable temperature characteristics of InGaN blue laser diodes,” Appl. Phys. Lett. 89, 031122 (2006).
[Crossref]

Strauß, U.

U. Strauß, S. Brüninghoff, M. Schillgalies, C. Vierheilig, N. Gmeinwieser, V. Kümmler, G. Brüderl, S. Lutgen, A. Avramescu, D. Queren, D. Dini, C. Eichler, A. Lell, and U. T. Schwarz, “True blue InGaN laser for pico size projectors,” Proc. SPIE 6894, 689417 (2008).
[Crossref]

Sugimoto, Y.

T. Kozaki, H. Matsumura, Y. Sugimoto, S. Nagahama, and T. Mukai, “High-power and wide wavelength range GaN-based laser diodes,” Proc. SPIE 6133, 613306 (2006).
[Crossref]

Sung, Y. J.

H. Y. Ryu, K. H. Ha, S. N. Lee, T. Jang, J. K. Son, H. S. Paek, Y. J. Sung, H. K. Kim, K. S. Kim, O. H. Nam, Y. Park, and J. I. Shim, “High-performance blue InGaN lase diodes with single-quantum-well active layers,” IEEE Photon. Technol. Lett. 19, 1717–1719 (2007).
[Crossref]

H. Y. Ryu, K. H. Ha, S. N. Lee, T. Jang, H. K. Kim, J. H. Chae, K. S. Kim, K. K. Choi, J. K. Son, H. S. Paek, Y. J. Sung, T. Sakong, O. H. Nam, and Y. J. Park, “Highly stable temperature characteristics of InGaN blue laser diodes,” Appl. Phys. Lett. 89, 031122 (2006).
[Crossref]

Suski, T.

T. Świetlik, G. Franssen, P. Wiśniewski, S. Krukowski, S. P. Lepkowski, L. Marona, M. Leszczyński, P. Prystawko, I. Grzegory, T. Suski, S. Porowski, P. Perlin, R. Czernecki, A. Bering-Staniszewska, and P. G. Eliseev, “Anomalous temperature characteristics of single wide quantume well InGaN laser diode,” Appl. Phys. Lett. 88, 071121 (2006).
[Crossref]

Swietlik, T.

T. Świetlik, G. Franssen, P. Wiśniewski, S. Krukowski, S. P. Lepkowski, L. Marona, M. Leszczyński, P. Prystawko, I. Grzegory, T. Suski, S. Porowski, P. Perlin, R. Czernecki, A. Bering-Staniszewska, and P. G. Eliseev, “Anomalous temperature characteristics of single wide quantume well InGaN laser diode,” Appl. Phys. Lett. 88, 071121 (2006).
[Crossref]

Takeya, M.

M. Ikeda, T. Mizuno, M. Takeya, S. Goto, S. Ikeda, T. Fujimoto, Y. Ohfuji, and T. Hashizu, “High-power GaN-based semiconductor lasers,” Phys. Status Solidi State (c) 1, 1461–1467 (2004).
[Crossref]

S. Uchida, M. Takeya, S. Ikeda, T. Mizuno, T. Fujimoto, O. Matsumoto, S. Goto, T. Tojyo, and M. Ikeda, “Recent progress in high-power blue-violet lasers,” IEEE J. Sel. Top Quantum Electron. 9, 1252–1259 (2003).
[Crossref]

Tanaka, T.

M. Kubota, K. Okamoto, T. Tanaka, and H. Ohta, “Continuous-wave operation of blue laser diodes based on nonpolar m-plane gallium nitride,” Appl. Phys. Express 1, 011102 (2008).
[Crossref]

M. Ohta, Y. Ohizumi, Y. Hoshina, T. Tanaka, Y. Yabuki, K. Funato, S. Tomiya, S. Goto, and M. Ikeda, “High-power pure blue laser diodes,” Phys. Status Solidi (a) 203, 2068–2072 (2007).
[Crossref]

Thahab, S. M.

Tojyo, T.

S. Uchida, M. Takeya, S. Ikeda, T. Mizuno, T. Fujimoto, O. Matsumoto, S. Goto, T. Tojyo, and M. Ikeda, “Recent progress in high-power blue-violet lasers,” IEEE J. Sel. Top Quantum Electron. 9, 1252–1259 (2003).
[Crossref]

Tomiya, S.

M. Ohta, Y. Ohizumi, Y. Hoshina, T. Tanaka, Y. Yabuki, K. Funato, S. Tomiya, S. Goto, and M. Ikeda, “High-power pure blue laser diodes,” Phys. Status Solidi (a) 203, 2068–2072 (2007).
[Crossref]

Tsai, M. L.

S. H. Yen, Y. K. Kuo, M. L. Tsai, and T. C. Hsu, “Investigation of violet InGaN laser diodes with normal and reversed polarizations,” Appl. Phys. Lett. 91, 201118 (2007).
[Crossref]

Uchida, S.

S. Uchida, M. Takeya, S. Ikeda, T. Mizuno, T. Fujimoto, O. Matsumoto, S. Goto, T. Tojyo, and M. Ikeda, “Recent progress in high-power blue-violet lasers,” IEEE J. Sel. Top Quantum Electron. 9, 1252–1259 (2003).
[Crossref]

Vierheilig, C.

U. Strauß, S. Brüninghoff, M. Schillgalies, C. Vierheilig, N. Gmeinwieser, V. Kümmler, G. Brüderl, S. Lutgen, A. Avramescu, D. Queren, D. Dini, C. Eichler, A. Lell, and U. T. Schwarz, “True blue InGaN laser for pico size projectors,” Proc. SPIE 6894, 689417 (2008).
[Crossref]

Vurgaftman, I.

I. Vurgaftman and J. R. Meyer, “Band parameters for nitrogen-containing semiconductors,” J. Appl. Phys. 94, 3675–3696 (2003).
[Crossref]

Wisniewski, P.

T. Świetlik, G. Franssen, P. Wiśniewski, S. Krukowski, S. P. Lepkowski, L. Marona, M. Leszczyński, P. Prystawko, I. Grzegory, T. Suski, S. Porowski, P. Perlin, R. Czernecki, A. Bering-Staniszewska, and P. G. Eliseev, “Anomalous temperature characteristics of single wide quantume well InGaN laser diode,” Appl. Phys. Lett. 88, 071121 (2006).
[Crossref]

Yabuki, Y.

M. Ohta, Y. Ohizumi, Y. Hoshina, T. Tanaka, Y. Yabuki, K. Funato, S. Tomiya, S. Goto, and M. Ikeda, “High-power pure blue laser diodes,” Phys. Status Solidi (a) 203, 2068–2072 (2007).
[Crossref]

Yanamoto, T.

T. Miyoshi, T. Kozaki, T. Yanamoto, Y. Fujimura, S. Nagahama, and T. Mukai, “GaN-based high-output-power blue laser diodes for display applications,” J. Soc. Inf. Display 15, 157–160 (2007).
[Crossref]

Yen, S. H.

S. H. Yen, Y. K. Kuo, M. L. Tsai, and T. C. Hsu, “Investigation of violet InGaN laser diodes with normal and reversed polarizations,” Appl. Phys. Lett. 91, 201118 (2007).
[Crossref]

Appl. Phys. Express (1)

M. Kubota, K. Okamoto, T. Tanaka, and H. Ohta, “Continuous-wave operation of blue laser diodes based on nonpolar m-plane gallium nitride,” Appl. Phys. Express 1, 011102 (2008).
[Crossref]

Appl. Phys. Lett. (4)

H. Y. Ryu, K. H. Ha, J. H. Chae, O. H. Nam, and Y. J. Park, “Measurement of junction temperature in GaN-based laser diodes using voltage-temperature characteristics,” Appl. Phys. Lett. 87, 093506 (2005).
[Crossref]

S. H. Yen, Y. K. Kuo, M. L. Tsai, and T. C. Hsu, “Investigation of violet InGaN laser diodes with normal and reversed polarizations,” Appl. Phys. Lett. 91, 201118 (2007).
[Crossref]

T. Świetlik, G. Franssen, P. Wiśniewski, S. Krukowski, S. P. Lepkowski, L. Marona, M. Leszczyński, P. Prystawko, I. Grzegory, T. Suski, S. Porowski, P. Perlin, R. Czernecki, A. Bering-Staniszewska, and P. G. Eliseev, “Anomalous temperature characteristics of single wide quantume well InGaN laser diode,” Appl. Phys. Lett. 88, 071121 (2006).
[Crossref]

H. Y. Ryu, K. H. Ha, S. N. Lee, T. Jang, H. K. Kim, J. H. Chae, K. S. Kim, K. K. Choi, J. K. Son, H. S. Paek, Y. J. Sung, T. Sakong, O. H. Nam, and Y. J. Park, “Highly stable temperature characteristics of InGaN blue laser diodes,” Appl. Phys. Lett. 89, 031122 (2006).
[Crossref]

IEE Proc. Optoelectron. (1)

J. Piprek and S. Nakamura, “Physics of high-power InGaN/GaN lasers,” IEE Proc. Optoelectron. 149, 145–151 (2002).
[Crossref]

IEEE J. Quantum Electron. (1)

Y. K. Kuo and Y. A. Chang, “Effects of electronic current overflow and inhomogeneous carrier distribution on InGaN quantum-well laser performance,” IEEE J. Quantum Electron. 40, 437–444 (2004).
[Crossref]

IEEE J. Sel. Top Quantum Electron. (1)

S. Uchida, M. Takeya, S. Ikeda, T. Mizuno, T. Fujimoto, O. Matsumoto, S. Goto, T. Tojyo, and M. Ikeda, “Recent progress in high-power blue-violet lasers,” IEEE J. Sel. Top Quantum Electron. 9, 1252–1259 (2003).
[Crossref]

IEEE Photon. Technol. Lett. (1)

H. Y. Ryu, K. H. Ha, S. N. Lee, T. Jang, J. K. Son, H. S. Paek, Y. J. Sung, H. K. Kim, K. S. Kim, O. H. Nam, Y. Park, and J. I. Shim, “High-performance blue InGaN lase diodes with single-quantum-well active layers,” IEEE Photon. Technol. Lett. 19, 1717–1719 (2007).
[Crossref]

J. Appl. Phys. (2)

J. Y. Chang and Y. K. Kuo, “Simulation of blue InGaN quantum-well lasers,” J. Appl. Phys. 93, 4992–4998 (2003).
[Crossref]

I. Vurgaftman and J. R. Meyer, “Band parameters for nitrogen-containing semiconductors,” J. Appl. Phys. 94, 3675–3696 (2003).
[Crossref]

J. Korean Phys. Soc. (1)

H. Y. Ryu, “Effect of ridge shape on the fundamental single-mode operation of InGaN laser diode structures,” J. Korean Phys. Soc. 52, 1779–1785 (2008).
[Crossref]

J. Soc. Inf. Display (1)

T. Miyoshi, T. Kozaki, T. Yanamoto, Y. Fujimura, S. Nagahama, and T. Mukai, “GaN-based high-output-power blue laser diodes for display applications,” J. Soc. Inf. Display 15, 157–160 (2007).
[Crossref]

Opt. Express (1)

Phys. Status Solidi (a) (1)

M. Ohta, Y. Ohizumi, Y. Hoshina, T. Tanaka, Y. Yabuki, K. Funato, S. Tomiya, S. Goto, and M. Ikeda, “High-power pure blue laser diodes,” Phys. Status Solidi (a) 203, 2068–2072 (2007).
[Crossref]

Phys. Status Solidi State (c) (1)

M. Ikeda, T. Mizuno, M. Takeya, S. Goto, S. Ikeda, T. Fujimoto, Y. Ohfuji, and T. Hashizu, “High-power GaN-based semiconductor lasers,” Phys. Status Solidi State (c) 1, 1461–1467 (2004).
[Crossref]

Proc. SPIE (3)

M. Shono, Y. Nomura, and Y. Bessho, “High-power blue-violet laser diode fabricated on a GaN substrate,” Proc. SPIE 5365, 282 (2004).
[Crossref]

T. Kozaki, H. Matsumura, Y. Sugimoto, S. Nagahama, and T. Mukai, “High-power and wide wavelength range GaN-based laser diodes,” Proc. SPIE 6133, 613306 (2006).
[Crossref]

U. Strauß, S. Brüninghoff, M. Schillgalies, C. Vierheilig, N. Gmeinwieser, V. Kümmler, G. Brüderl, S. Lutgen, A. Avramescu, D. Queren, D. Dini, C. Eichler, A. Lell, and U. T. Schwarz, “True blue InGaN laser for pico size projectors,” Proc. SPIE 6894, 689417 (2008).
[Crossref]

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Figures (6)

Fig. 1.
Fig. 1.

Schematic diagrams of conduction band energy are shown for several active-layer structures: (a) double QW with an n-type doped barrier (type I), (b) double QW with an undoped barrier (type II), (c) single QW (type III).

Fig. 2.
Fig. 2.

L-I curves of typical blue LD samples when temperature varies from 20 °C to 80 °C. (a). Type I-1 (n-type doped barrier, 1%-In composition). (b). Type I-2 (n-type doped barrier, 3%-In composition). (c). Type II (undoped barrier, 1%-In composition), (d) Type III (single QW)

Fig. 3.
Fig. 3.

(a). Threshold current is plotted as a function of temperature for the 4-types of LD structures. (b). Slope efficiency is plotted as a function of temperature for the 4-types of LD structures.

Fig. 4.
Fig. 4.

Wall plug efficiency (WPE) at 30-mW output power is plotted as a function of temperature for the 4-types of LD structures.

Fig. 5.
Fig. 5.

Distribution of hole density (a) and optical gain (b) at two quantum wells for the type I-1 structure (n-type doped barrier) when temperature varies from 20 °C to 80 °C.

Fig. 6.
Fig. 6.

Distribution of hole density (a) and optical gain (b) at two quantum wells for the type II structure (undoped barrier) when temperature varies from 20 °C to 80 °C.

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