Abstract

GaNAsSb/GaAs p-i-n photodetectors with an intrinsic GaNAsSb photoabsorption layer grown at 350°C, 400°C, 440°C and 480°C, have been prepared using radio-frequency nitrogen plasma-assisted molecular beam epitaxy in conjunction with a valved antimony cracker source. The i- GaNAsSb photoabsorption layer contains 3.3% of nitrogen and 8% of antimony, resulting in DC photo-response up to wavelengths of 1350nm. The device with i-GaNAsSb layer grown at 350°C exhibits extremely high photoresponsivity of 12A/W at 1.3µm. These photodetectors show characteristics which strongly suggest the presence of carrier avalanche process at reverse bias less than 5V.

© 2008 Optical Society of America

Full Article  |  PDF Article

References

  • View by:
  • |
  • |
  • |

  1. S. Wicaksono, S. F. Yoon, K. H. Tan, W. K. Loke, “Characterization of small-mismatch GaAsSbN on GaAs grown by solid source molecular beam epitaxy,” J. Vac. Sci. Technol. B 23, 1054–1059 (2005).
    [CrossRef]
  2. E. Luna, M. Hopkinson, J. M. Ulloa, A. Guzman, E. Munoz, “Dilute nitride based double-barrier quantumwell infrared photodetector operating in the near infrared,” Appl. Phys. Lett. 83, 3111–3113 (2003).
    [CrossRef]
  3. H. Luo, J. A. Gupta, H. C. Liu, “1.55µm GaNAsSb photodetector on GaAs,” Appl. Phys. Lett. 86, 211121–211121 (2005).
    [CrossRef]
  4. Q. Han, X. H. Yang, Z. C. Niu, H. Q. Ni, Y. Q. Xu, S. Y. Zhang, Y. Du, L. H. Peng, H. Zhao, C. Z. Tong, R. H. Wu, Q. M. Wang, “1.55 µm GaInNAs resonant-cavity-enhanced photodetector grown on GaAs,” Appl. Phys. Lett. 87, 111105–111101 (2005).
    [CrossRef]
  5. W. K. Cheah, W. J. Fan, S. F. Yoon, D. H. Zhang, B. K. Ng, W. K. Loke, R. Liu, A. T. S. Wee, “GaAs-based heterojunction p-i-n photodetectors using pentanary InGaAsNSb as the intrinsic layer,” IEEE Photon. Technol. Lett. 17, 1932–1934 (2005).
    [CrossRef]
  6. W. K. Loke, S. F. Yoon, S. Wicaksono, B. K. Ng, “Characteristics of non-annealed λ=1.35 µm closely lattice-matched GaInNAs/GaAs p-i-n photodetector structures grown by solid-source molecular beam epitaxy,” Mater. Sci. Eng. B 131, 40–44 (2006).
    [CrossRef]
  7. W. K. Loke, S. F. Yoon, K. H. Tan, S. Wicaksono, W. J. Fan, “Improvement of GaInNAs p-i-n photodetector responsivity by antimony incorporation,” J. Appl. Phys. 101, 33122–33121 (2007).
    [CrossRef]
  8. S. Wicaksono, S. F. Yoon, W. K. Loke, K. H. Tan, B. K. Ng, “Effect of growth temperature on closely lattice-matched GaAsSbN intrinsic layer for GaAs-based 1.3 µm p-i-n photodetector,” J. Appl. Phys. 99, 104502–104501 (2006).
    [CrossRef]
  9. S. Wicaksono, S. F. Yoon, W. K. Loke, K. H. Tan, K. L. Lew, M. Zegaoui, J. P. Vilcot, D. Decoster, J. Chazelas, “Effect of growth temperature on defect states of GaAsSbN intrinsic layer in GaAs/GaAsSbN/GaAs photodiode for 1.3 µm application,” J. Appl. Phys. 102, 044505–044507 (2007).
    [CrossRef]
  10. K. H. Tan, S. F. Yoon, W. K. Loke, S. Wicaksono, K. L. Lew, A. Stohr, O. Ecin, A. Poloczek, A. Malcoci, D. Jager, “High-speed picosecond pulse response GaNAsSb p-i-n photodetectors grown by rf plasma-assisted nitrogen molecular beam epitaxy,” Appl. Phys. Lett. 90, 183515–183511 (2007).
    [CrossRef]
  11. J. S. Ng, W. M. Soong, M. J. Steer, M. Hopkinson, J. P. R. David, J. Chamings, S. J. Sweeney, A. R. Adams, “Long wavelength bulk GaInNAs p-i-n photodiodes lattice matched to GaAs,” J. Appl. Phys. 101, 64506–64501 (2007).
    [CrossRef]
  12. Y. X. Dang, W. J. Fan, S. T. Ng, S. Wicaksono, S. F. Yoon, D. H. Zhang, “Study of interdiffusion in GaAsSbNGaAs quantum well structure by ten-band kp method,” J. Appl. Phys. 98, 026102 (2005).
    [CrossRef]
  13. K. H. Tan, S. F. Yoon, W. K. Loke, S. Wicaksono, Z. Xu, T. K. Ng, K. L. Lew, N. Saadsaoud, M. Zegaoui, D. Decoster, J. Chazelas, “1.55µm GaAs/GaNAsSb/GaAs optical waveguides grown by radio frequency nitrogen plasma-assisted molecular beam epitaxy,” Appl. Phys. Lett. 92, 113513 (2008).
    [CrossRef]
  14. C. Hu, K. A. Anselm, B. G. Streetman, J. C. Campbell, “Noise characteristics of thin multiplication region GaAs avalanche photodiodes,” Appl. Phys. Lett. 69, 3734–3736 (1996).
    [CrossRef]
  15. J. S. Ng, J. P. R. David, G. J. Rees, J. Allam, “Avalanche breakdown voltage of In0.53Ga0.47As,” J. Appl. Phys. 91, 5200–5202 (2002).
    [CrossRef]
  16. W. M. Chen, I. A. Buyanova, C. W. Tu, H. Yonezu, “Point defects in dilute nitride III-N-As and III-N-P,” Physica B: Condensed Matter 376–377, 545–551 (2006).
    [CrossRef]
  17. W. Shockley, “Problems related to p-n junctions in silicon,” Solid-State Electron. 2, 35–67 (1961).
    [CrossRef]
  18. L. Partain, D. Day, R. Powell, “Metastable impact ionization of traps model for lock-on in GaAs photoconductive switches,” J. Appl. Phys. 74, 335–340 (1993).
    [CrossRef]
  19. C. J. Collins, T. Li, D. J. H. Lambert, M. M. Wong, R. D. Dupuis, J. C. Campbell, “Selective regrowth of Al0.30Ga0.70N p-i-n photodiodes,” Appl. Phys. Lett. 77, 2810 (2000).

2008

K. H. Tan, S. F. Yoon, W. K. Loke, S. Wicaksono, Z. Xu, T. K. Ng, K. L. Lew, N. Saadsaoud, M. Zegaoui, D. Decoster, J. Chazelas, “1.55µm GaAs/GaNAsSb/GaAs optical waveguides grown by radio frequency nitrogen plasma-assisted molecular beam epitaxy,” Appl. Phys. Lett. 92, 113513 (2008).
[CrossRef]

2007

W. K. Loke, S. F. Yoon, K. H. Tan, S. Wicaksono, W. J. Fan, “Improvement of GaInNAs p-i-n photodetector responsivity by antimony incorporation,” J. Appl. Phys. 101, 33122–33121 (2007).
[CrossRef]

S. Wicaksono, S. F. Yoon, W. K. Loke, K. H. Tan, K. L. Lew, M. Zegaoui, J. P. Vilcot, D. Decoster, J. Chazelas, “Effect of growth temperature on defect states of GaAsSbN intrinsic layer in GaAs/GaAsSbN/GaAs photodiode for 1.3 µm application,” J. Appl. Phys. 102, 044505–044507 (2007).
[CrossRef]

K. H. Tan, S. F. Yoon, W. K. Loke, S. Wicaksono, K. L. Lew, A. Stohr, O. Ecin, A. Poloczek, A. Malcoci, D. Jager, “High-speed picosecond pulse response GaNAsSb p-i-n photodetectors grown by rf plasma-assisted nitrogen molecular beam epitaxy,” Appl. Phys. Lett. 90, 183515–183511 (2007).
[CrossRef]

J. S. Ng, W. M. Soong, M. J. Steer, M. Hopkinson, J. P. R. David, J. Chamings, S. J. Sweeney, A. R. Adams, “Long wavelength bulk GaInNAs p-i-n photodiodes lattice matched to GaAs,” J. Appl. Phys. 101, 64506–64501 (2007).
[CrossRef]

2006

S. Wicaksono, S. F. Yoon, W. K. Loke, K. H. Tan, B. K. Ng, “Effect of growth temperature on closely lattice-matched GaAsSbN intrinsic layer for GaAs-based 1.3 µm p-i-n photodetector,” J. Appl. Phys. 99, 104502–104501 (2006).
[CrossRef]

W. K. Loke, S. F. Yoon, S. Wicaksono, B. K. Ng, “Characteristics of non-annealed λ=1.35 µm closely lattice-matched GaInNAs/GaAs p-i-n photodetector structures grown by solid-source molecular beam epitaxy,” Mater. Sci. Eng. B 131, 40–44 (2006).
[CrossRef]

W. M. Chen, I. A. Buyanova, C. W. Tu, H. Yonezu, “Point defects in dilute nitride III-N-As and III-N-P,” Physica B: Condensed Matter 376–377, 545–551 (2006).
[CrossRef]

2005

Y. X. Dang, W. J. Fan, S. T. Ng, S. Wicaksono, S. F. Yoon, D. H. Zhang, “Study of interdiffusion in GaAsSbNGaAs quantum well structure by ten-band kp method,” J. Appl. Phys. 98, 026102 (2005).
[CrossRef]

S. Wicaksono, S. F. Yoon, K. H. Tan, W. K. Loke, “Characterization of small-mismatch GaAsSbN on GaAs grown by solid source molecular beam epitaxy,” J. Vac. Sci. Technol. B 23, 1054–1059 (2005).
[CrossRef]

H. Luo, J. A. Gupta, H. C. Liu, “1.55µm GaNAsSb photodetector on GaAs,” Appl. Phys. Lett. 86, 211121–211121 (2005).
[CrossRef]

Q. Han, X. H. Yang, Z. C. Niu, H. Q. Ni, Y. Q. Xu, S. Y. Zhang, Y. Du, L. H. Peng, H. Zhao, C. Z. Tong, R. H. Wu, Q. M. Wang, “1.55 µm GaInNAs resonant-cavity-enhanced photodetector grown on GaAs,” Appl. Phys. Lett. 87, 111105–111101 (2005).
[CrossRef]

W. K. Cheah, W. J. Fan, S. F. Yoon, D. H. Zhang, B. K. Ng, W. K. Loke, R. Liu, A. T. S. Wee, “GaAs-based heterojunction p-i-n photodetectors using pentanary InGaAsNSb as the intrinsic layer,” IEEE Photon. Technol. Lett. 17, 1932–1934 (2005).
[CrossRef]

2003

E. Luna, M. Hopkinson, J. M. Ulloa, A. Guzman, E. Munoz, “Dilute nitride based double-barrier quantumwell infrared photodetector operating in the near infrared,” Appl. Phys. Lett. 83, 3111–3113 (2003).
[CrossRef]

2002

J. S. Ng, J. P. R. David, G. J. Rees, J. Allam, “Avalanche breakdown voltage of In0.53Ga0.47As,” J. Appl. Phys. 91, 5200–5202 (2002).
[CrossRef]

2000

C. J. Collins, T. Li, D. J. H. Lambert, M. M. Wong, R. D. Dupuis, J. C. Campbell, “Selective regrowth of Al0.30Ga0.70N p-i-n photodiodes,” Appl. Phys. Lett. 77, 2810 (2000).

1996

C. Hu, K. A. Anselm, B. G. Streetman, J. C. Campbell, “Noise characteristics of thin multiplication region GaAs avalanche photodiodes,” Appl. Phys. Lett. 69, 3734–3736 (1996).
[CrossRef]

1993

L. Partain, D. Day, R. Powell, “Metastable impact ionization of traps model for lock-on in GaAs photoconductive switches,” J. Appl. Phys. 74, 335–340 (1993).
[CrossRef]

1961

W. Shockley, “Problems related to p-n junctions in silicon,” Solid-State Electron. 2, 35–67 (1961).
[CrossRef]

Adams, A. R.

J. S. Ng, W. M. Soong, M. J. Steer, M. Hopkinson, J. P. R. David, J. Chamings, S. J. Sweeney, A. R. Adams, “Long wavelength bulk GaInNAs p-i-n photodiodes lattice matched to GaAs,” J. Appl. Phys. 101, 64506–64501 (2007).
[CrossRef]

Allam, J.

J. S. Ng, J. P. R. David, G. J. Rees, J. Allam, “Avalanche breakdown voltage of In0.53Ga0.47As,” J. Appl. Phys. 91, 5200–5202 (2002).
[CrossRef]

Anselm, K. A.

C. Hu, K. A. Anselm, B. G. Streetman, J. C. Campbell, “Noise characteristics of thin multiplication region GaAs avalanche photodiodes,” Appl. Phys. Lett. 69, 3734–3736 (1996).
[CrossRef]

Buyanova, I. A.

W. M. Chen, I. A. Buyanova, C. W. Tu, H. Yonezu, “Point defects in dilute nitride III-N-As and III-N-P,” Physica B: Condensed Matter 376–377, 545–551 (2006).
[CrossRef]

Campbell, J. C.

C. J. Collins, T. Li, D. J. H. Lambert, M. M. Wong, R. D. Dupuis, J. C. Campbell, “Selective regrowth of Al0.30Ga0.70N p-i-n photodiodes,” Appl. Phys. Lett. 77, 2810 (2000).

C. Hu, K. A. Anselm, B. G. Streetman, J. C. Campbell, “Noise characteristics of thin multiplication region GaAs avalanche photodiodes,” Appl. Phys. Lett. 69, 3734–3736 (1996).
[CrossRef]

Chamings, J.

J. S. Ng, W. M. Soong, M. J. Steer, M. Hopkinson, J. P. R. David, J. Chamings, S. J. Sweeney, A. R. Adams, “Long wavelength bulk GaInNAs p-i-n photodiodes lattice matched to GaAs,” J. Appl. Phys. 101, 64506–64501 (2007).
[CrossRef]

Chazelas, J.

K. H. Tan, S. F. Yoon, W. K. Loke, S. Wicaksono, Z. Xu, T. K. Ng, K. L. Lew, N. Saadsaoud, M. Zegaoui, D. Decoster, J. Chazelas, “1.55µm GaAs/GaNAsSb/GaAs optical waveguides grown by radio frequency nitrogen plasma-assisted molecular beam epitaxy,” Appl. Phys. Lett. 92, 113513 (2008).
[CrossRef]

S. Wicaksono, S. F. Yoon, W. K. Loke, K. H. Tan, K. L. Lew, M. Zegaoui, J. P. Vilcot, D. Decoster, J. Chazelas, “Effect of growth temperature on defect states of GaAsSbN intrinsic layer in GaAs/GaAsSbN/GaAs photodiode for 1.3 µm application,” J. Appl. Phys. 102, 044505–044507 (2007).
[CrossRef]

Cheah, W. K.

W. K. Cheah, W. J. Fan, S. F. Yoon, D. H. Zhang, B. K. Ng, W. K. Loke, R. Liu, A. T. S. Wee, “GaAs-based heterojunction p-i-n photodetectors using pentanary InGaAsNSb as the intrinsic layer,” IEEE Photon. Technol. Lett. 17, 1932–1934 (2005).
[CrossRef]

Chen, W. M.

W. M. Chen, I. A. Buyanova, C. W. Tu, H. Yonezu, “Point defects in dilute nitride III-N-As and III-N-P,” Physica B: Condensed Matter 376–377, 545–551 (2006).
[CrossRef]

Collins, C. J.

C. J. Collins, T. Li, D. J. H. Lambert, M. M. Wong, R. D. Dupuis, J. C. Campbell, “Selective regrowth of Al0.30Ga0.70N p-i-n photodiodes,” Appl. Phys. Lett. 77, 2810 (2000).

Dang, Y. X.

Y. X. Dang, W. J. Fan, S. T. Ng, S. Wicaksono, S. F. Yoon, D. H. Zhang, “Study of interdiffusion in GaAsSbNGaAs quantum well structure by ten-band kp method,” J. Appl. Phys. 98, 026102 (2005).
[CrossRef]

David, J. P. R.

J. S. Ng, W. M. Soong, M. J. Steer, M. Hopkinson, J. P. R. David, J. Chamings, S. J. Sweeney, A. R. Adams, “Long wavelength bulk GaInNAs p-i-n photodiodes lattice matched to GaAs,” J. Appl. Phys. 101, 64506–64501 (2007).
[CrossRef]

J. S. Ng, J. P. R. David, G. J. Rees, J. Allam, “Avalanche breakdown voltage of In0.53Ga0.47As,” J. Appl. Phys. 91, 5200–5202 (2002).
[CrossRef]

Day, D.

L. Partain, D. Day, R. Powell, “Metastable impact ionization of traps model for lock-on in GaAs photoconductive switches,” J. Appl. Phys. 74, 335–340 (1993).
[CrossRef]

Decoster, D.

K. H. Tan, S. F. Yoon, W. K. Loke, S. Wicaksono, Z. Xu, T. K. Ng, K. L. Lew, N. Saadsaoud, M. Zegaoui, D. Decoster, J. Chazelas, “1.55µm GaAs/GaNAsSb/GaAs optical waveguides grown by radio frequency nitrogen plasma-assisted molecular beam epitaxy,” Appl. Phys. Lett. 92, 113513 (2008).
[CrossRef]

S. Wicaksono, S. F. Yoon, W. K. Loke, K. H. Tan, K. L. Lew, M. Zegaoui, J. P. Vilcot, D. Decoster, J. Chazelas, “Effect of growth temperature on defect states of GaAsSbN intrinsic layer in GaAs/GaAsSbN/GaAs photodiode for 1.3 µm application,” J. Appl. Phys. 102, 044505–044507 (2007).
[CrossRef]

Du, Y.

Q. Han, X. H. Yang, Z. C. Niu, H. Q. Ni, Y. Q. Xu, S. Y. Zhang, Y. Du, L. H. Peng, H. Zhao, C. Z. Tong, R. H. Wu, Q. M. Wang, “1.55 µm GaInNAs resonant-cavity-enhanced photodetector grown on GaAs,” Appl. Phys. Lett. 87, 111105–111101 (2005).
[CrossRef]

Dupuis, R. D.

C. J. Collins, T. Li, D. J. H. Lambert, M. M. Wong, R. D. Dupuis, J. C. Campbell, “Selective regrowth of Al0.30Ga0.70N p-i-n photodiodes,” Appl. Phys. Lett. 77, 2810 (2000).

Ecin, O.

K. H. Tan, S. F. Yoon, W. K. Loke, S. Wicaksono, K. L. Lew, A. Stohr, O. Ecin, A. Poloczek, A. Malcoci, D. Jager, “High-speed picosecond pulse response GaNAsSb p-i-n photodetectors grown by rf plasma-assisted nitrogen molecular beam epitaxy,” Appl. Phys. Lett. 90, 183515–183511 (2007).
[CrossRef]

Fan, W. J.

W. K. Loke, S. F. Yoon, K. H. Tan, S. Wicaksono, W. J. Fan, “Improvement of GaInNAs p-i-n photodetector responsivity by antimony incorporation,” J. Appl. Phys. 101, 33122–33121 (2007).
[CrossRef]

W. K. Cheah, W. J. Fan, S. F. Yoon, D. H. Zhang, B. K. Ng, W. K. Loke, R. Liu, A. T. S. Wee, “GaAs-based heterojunction p-i-n photodetectors using pentanary InGaAsNSb as the intrinsic layer,” IEEE Photon. Technol. Lett. 17, 1932–1934 (2005).
[CrossRef]

Y. X. Dang, W. J. Fan, S. T. Ng, S. Wicaksono, S. F. Yoon, D. H. Zhang, “Study of interdiffusion in GaAsSbNGaAs quantum well structure by ten-band kp method,” J. Appl. Phys. 98, 026102 (2005).
[CrossRef]

Gupta, J. A.

H. Luo, J. A. Gupta, H. C. Liu, “1.55µm GaNAsSb photodetector on GaAs,” Appl. Phys. Lett. 86, 211121–211121 (2005).
[CrossRef]

Guzman, A.

E. Luna, M. Hopkinson, J. M. Ulloa, A. Guzman, E. Munoz, “Dilute nitride based double-barrier quantumwell infrared photodetector operating in the near infrared,” Appl. Phys. Lett. 83, 3111–3113 (2003).
[CrossRef]

Han, Q.

Q. Han, X. H. Yang, Z. C. Niu, H. Q. Ni, Y. Q. Xu, S. Y. Zhang, Y. Du, L. H. Peng, H. Zhao, C. Z. Tong, R. H. Wu, Q. M. Wang, “1.55 µm GaInNAs resonant-cavity-enhanced photodetector grown on GaAs,” Appl. Phys. Lett. 87, 111105–111101 (2005).
[CrossRef]

Hopkinson, M.

J. S. Ng, W. M. Soong, M. J. Steer, M. Hopkinson, J. P. R. David, J. Chamings, S. J. Sweeney, A. R. Adams, “Long wavelength bulk GaInNAs p-i-n photodiodes lattice matched to GaAs,” J. Appl. Phys. 101, 64506–64501 (2007).
[CrossRef]

E. Luna, M. Hopkinson, J. M. Ulloa, A. Guzman, E. Munoz, “Dilute nitride based double-barrier quantumwell infrared photodetector operating in the near infrared,” Appl. Phys. Lett. 83, 3111–3113 (2003).
[CrossRef]

Hu, C.

C. Hu, K. A. Anselm, B. G. Streetman, J. C. Campbell, “Noise characteristics of thin multiplication region GaAs avalanche photodiodes,” Appl. Phys. Lett. 69, 3734–3736 (1996).
[CrossRef]

Jager, D.

K. H. Tan, S. F. Yoon, W. K. Loke, S. Wicaksono, K. L. Lew, A. Stohr, O. Ecin, A. Poloczek, A. Malcoci, D. Jager, “High-speed picosecond pulse response GaNAsSb p-i-n photodetectors grown by rf plasma-assisted nitrogen molecular beam epitaxy,” Appl. Phys. Lett. 90, 183515–183511 (2007).
[CrossRef]

Lambert, D. J. H.

C. J. Collins, T. Li, D. J. H. Lambert, M. M. Wong, R. D. Dupuis, J. C. Campbell, “Selective regrowth of Al0.30Ga0.70N p-i-n photodiodes,” Appl. Phys. Lett. 77, 2810 (2000).

Lew, K. L.

K. H. Tan, S. F. Yoon, W. K. Loke, S. Wicaksono, Z. Xu, T. K. Ng, K. L. Lew, N. Saadsaoud, M. Zegaoui, D. Decoster, J. Chazelas, “1.55µm GaAs/GaNAsSb/GaAs optical waveguides grown by radio frequency nitrogen plasma-assisted molecular beam epitaxy,” Appl. Phys. Lett. 92, 113513 (2008).
[CrossRef]

S. Wicaksono, S. F. Yoon, W. K. Loke, K. H. Tan, K. L. Lew, M. Zegaoui, J. P. Vilcot, D. Decoster, J. Chazelas, “Effect of growth temperature on defect states of GaAsSbN intrinsic layer in GaAs/GaAsSbN/GaAs photodiode for 1.3 µm application,” J. Appl. Phys. 102, 044505–044507 (2007).
[CrossRef]

K. H. Tan, S. F. Yoon, W. K. Loke, S. Wicaksono, K. L. Lew, A. Stohr, O. Ecin, A. Poloczek, A. Malcoci, D. Jager, “High-speed picosecond pulse response GaNAsSb p-i-n photodetectors grown by rf plasma-assisted nitrogen molecular beam epitaxy,” Appl. Phys. Lett. 90, 183515–183511 (2007).
[CrossRef]

Li, T.

C. J. Collins, T. Li, D. J. H. Lambert, M. M. Wong, R. D. Dupuis, J. C. Campbell, “Selective regrowth of Al0.30Ga0.70N p-i-n photodiodes,” Appl. Phys. Lett. 77, 2810 (2000).

Liu, H. C.

H. Luo, J. A. Gupta, H. C. Liu, “1.55µm GaNAsSb photodetector on GaAs,” Appl. Phys. Lett. 86, 211121–211121 (2005).
[CrossRef]

Liu, R.

W. K. Cheah, W. J. Fan, S. F. Yoon, D. H. Zhang, B. K. Ng, W. K. Loke, R. Liu, A. T. S. Wee, “GaAs-based heterojunction p-i-n photodetectors using pentanary InGaAsNSb as the intrinsic layer,” IEEE Photon. Technol. Lett. 17, 1932–1934 (2005).
[CrossRef]

Loke, W. K.

K. H. Tan, S. F. Yoon, W. K. Loke, S. Wicaksono, Z. Xu, T. K. Ng, K. L. Lew, N. Saadsaoud, M. Zegaoui, D. Decoster, J. Chazelas, “1.55µm GaAs/GaNAsSb/GaAs optical waveguides grown by radio frequency nitrogen plasma-assisted molecular beam epitaxy,” Appl. Phys. Lett. 92, 113513 (2008).
[CrossRef]

S. Wicaksono, S. F. Yoon, W. K. Loke, K. H. Tan, K. L. Lew, M. Zegaoui, J. P. Vilcot, D. Decoster, J. Chazelas, “Effect of growth temperature on defect states of GaAsSbN intrinsic layer in GaAs/GaAsSbN/GaAs photodiode for 1.3 µm application,” J. Appl. Phys. 102, 044505–044507 (2007).
[CrossRef]

W. K. Loke, S. F. Yoon, K. H. Tan, S. Wicaksono, W. J. Fan, “Improvement of GaInNAs p-i-n photodetector responsivity by antimony incorporation,” J. Appl. Phys. 101, 33122–33121 (2007).
[CrossRef]

K. H. Tan, S. F. Yoon, W. K. Loke, S. Wicaksono, K. L. Lew, A. Stohr, O. Ecin, A. Poloczek, A. Malcoci, D. Jager, “High-speed picosecond pulse response GaNAsSb p-i-n photodetectors grown by rf plasma-assisted nitrogen molecular beam epitaxy,” Appl. Phys. Lett. 90, 183515–183511 (2007).
[CrossRef]

S. Wicaksono, S. F. Yoon, W. K. Loke, K. H. Tan, B. K. Ng, “Effect of growth temperature on closely lattice-matched GaAsSbN intrinsic layer for GaAs-based 1.3 µm p-i-n photodetector,” J. Appl. Phys. 99, 104502–104501 (2006).
[CrossRef]

W. K. Loke, S. F. Yoon, S. Wicaksono, B. K. Ng, “Characteristics of non-annealed λ=1.35 µm closely lattice-matched GaInNAs/GaAs p-i-n photodetector structures grown by solid-source molecular beam epitaxy,” Mater. Sci. Eng. B 131, 40–44 (2006).
[CrossRef]

W. K. Cheah, W. J. Fan, S. F. Yoon, D. H. Zhang, B. K. Ng, W. K. Loke, R. Liu, A. T. S. Wee, “GaAs-based heterojunction p-i-n photodetectors using pentanary InGaAsNSb as the intrinsic layer,” IEEE Photon. Technol. Lett. 17, 1932–1934 (2005).
[CrossRef]

S. Wicaksono, S. F. Yoon, K. H. Tan, W. K. Loke, “Characterization of small-mismatch GaAsSbN on GaAs grown by solid source molecular beam epitaxy,” J. Vac. Sci. Technol. B 23, 1054–1059 (2005).
[CrossRef]

Luna, E.

E. Luna, M. Hopkinson, J. M. Ulloa, A. Guzman, E. Munoz, “Dilute nitride based double-barrier quantumwell infrared photodetector operating in the near infrared,” Appl. Phys. Lett. 83, 3111–3113 (2003).
[CrossRef]

Luo, H.

H. Luo, J. A. Gupta, H. C. Liu, “1.55µm GaNAsSb photodetector on GaAs,” Appl. Phys. Lett. 86, 211121–211121 (2005).
[CrossRef]

Malcoci, A.

K. H. Tan, S. F. Yoon, W. K. Loke, S. Wicaksono, K. L. Lew, A. Stohr, O. Ecin, A. Poloczek, A. Malcoci, D. Jager, “High-speed picosecond pulse response GaNAsSb p-i-n photodetectors grown by rf plasma-assisted nitrogen molecular beam epitaxy,” Appl. Phys. Lett. 90, 183515–183511 (2007).
[CrossRef]

Munoz, E.

E. Luna, M. Hopkinson, J. M. Ulloa, A. Guzman, E. Munoz, “Dilute nitride based double-barrier quantumwell infrared photodetector operating in the near infrared,” Appl. Phys. Lett. 83, 3111–3113 (2003).
[CrossRef]

Ng, B. K.

W. K. Loke, S. F. Yoon, S. Wicaksono, B. K. Ng, “Characteristics of non-annealed λ=1.35 µm closely lattice-matched GaInNAs/GaAs p-i-n photodetector structures grown by solid-source molecular beam epitaxy,” Mater. Sci. Eng. B 131, 40–44 (2006).
[CrossRef]

S. Wicaksono, S. F. Yoon, W. K. Loke, K. H. Tan, B. K. Ng, “Effect of growth temperature on closely lattice-matched GaAsSbN intrinsic layer for GaAs-based 1.3 µm p-i-n photodetector,” J. Appl. Phys. 99, 104502–104501 (2006).
[CrossRef]

W. K. Cheah, W. J. Fan, S. F. Yoon, D. H. Zhang, B. K. Ng, W. K. Loke, R. Liu, A. T. S. Wee, “GaAs-based heterojunction p-i-n photodetectors using pentanary InGaAsNSb as the intrinsic layer,” IEEE Photon. Technol. Lett. 17, 1932–1934 (2005).
[CrossRef]

Ng, J. S.

J. S. Ng, W. M. Soong, M. J. Steer, M. Hopkinson, J. P. R. David, J. Chamings, S. J. Sweeney, A. R. Adams, “Long wavelength bulk GaInNAs p-i-n photodiodes lattice matched to GaAs,” J. Appl. Phys. 101, 64506–64501 (2007).
[CrossRef]

J. S. Ng, J. P. R. David, G. J. Rees, J. Allam, “Avalanche breakdown voltage of In0.53Ga0.47As,” J. Appl. Phys. 91, 5200–5202 (2002).
[CrossRef]

Ng, S. T.

Y. X. Dang, W. J. Fan, S. T. Ng, S. Wicaksono, S. F. Yoon, D. H. Zhang, “Study of interdiffusion in GaAsSbNGaAs quantum well structure by ten-band kp method,” J. Appl. Phys. 98, 026102 (2005).
[CrossRef]

Ng, T. K.

K. H. Tan, S. F. Yoon, W. K. Loke, S. Wicaksono, Z. Xu, T. K. Ng, K. L. Lew, N. Saadsaoud, M. Zegaoui, D. Decoster, J. Chazelas, “1.55µm GaAs/GaNAsSb/GaAs optical waveguides grown by radio frequency nitrogen plasma-assisted molecular beam epitaxy,” Appl. Phys. Lett. 92, 113513 (2008).
[CrossRef]

Ni, H. Q.

Q. Han, X. H. Yang, Z. C. Niu, H. Q. Ni, Y. Q. Xu, S. Y. Zhang, Y. Du, L. H. Peng, H. Zhao, C. Z. Tong, R. H. Wu, Q. M. Wang, “1.55 µm GaInNAs resonant-cavity-enhanced photodetector grown on GaAs,” Appl. Phys. Lett. 87, 111105–111101 (2005).
[CrossRef]

Niu, Z. C.

Q. Han, X. H. Yang, Z. C. Niu, H. Q. Ni, Y. Q. Xu, S. Y. Zhang, Y. Du, L. H. Peng, H. Zhao, C. Z. Tong, R. H. Wu, Q. M. Wang, “1.55 µm GaInNAs resonant-cavity-enhanced photodetector grown on GaAs,” Appl. Phys. Lett. 87, 111105–111101 (2005).
[CrossRef]

Partain, L.

L. Partain, D. Day, R. Powell, “Metastable impact ionization of traps model for lock-on in GaAs photoconductive switches,” J. Appl. Phys. 74, 335–340 (1993).
[CrossRef]

Peng, L. H.

Q. Han, X. H. Yang, Z. C. Niu, H. Q. Ni, Y. Q. Xu, S. Y. Zhang, Y. Du, L. H. Peng, H. Zhao, C. Z. Tong, R. H. Wu, Q. M. Wang, “1.55 µm GaInNAs resonant-cavity-enhanced photodetector grown on GaAs,” Appl. Phys. Lett. 87, 111105–111101 (2005).
[CrossRef]

Poloczek, A.

K. H. Tan, S. F. Yoon, W. K. Loke, S. Wicaksono, K. L. Lew, A. Stohr, O. Ecin, A. Poloczek, A. Malcoci, D. Jager, “High-speed picosecond pulse response GaNAsSb p-i-n photodetectors grown by rf plasma-assisted nitrogen molecular beam epitaxy,” Appl. Phys. Lett. 90, 183515–183511 (2007).
[CrossRef]

Powell, R.

L. Partain, D. Day, R. Powell, “Metastable impact ionization of traps model for lock-on in GaAs photoconductive switches,” J. Appl. Phys. 74, 335–340 (1993).
[CrossRef]

Rees, G. J.

J. S. Ng, J. P. R. David, G. J. Rees, J. Allam, “Avalanche breakdown voltage of In0.53Ga0.47As,” J. Appl. Phys. 91, 5200–5202 (2002).
[CrossRef]

Saadsaoud, N.

K. H. Tan, S. F. Yoon, W. K. Loke, S. Wicaksono, Z. Xu, T. K. Ng, K. L. Lew, N. Saadsaoud, M. Zegaoui, D. Decoster, J. Chazelas, “1.55µm GaAs/GaNAsSb/GaAs optical waveguides grown by radio frequency nitrogen plasma-assisted molecular beam epitaxy,” Appl. Phys. Lett. 92, 113513 (2008).
[CrossRef]

Shockley, W.

W. Shockley, “Problems related to p-n junctions in silicon,” Solid-State Electron. 2, 35–67 (1961).
[CrossRef]

Soong, W. M.

J. S. Ng, W. M. Soong, M. J. Steer, M. Hopkinson, J. P. R. David, J. Chamings, S. J. Sweeney, A. R. Adams, “Long wavelength bulk GaInNAs p-i-n photodiodes lattice matched to GaAs,” J. Appl. Phys. 101, 64506–64501 (2007).
[CrossRef]

Steer, M. J.

J. S. Ng, W. M. Soong, M. J. Steer, M. Hopkinson, J. P. R. David, J. Chamings, S. J. Sweeney, A. R. Adams, “Long wavelength bulk GaInNAs p-i-n photodiodes lattice matched to GaAs,” J. Appl. Phys. 101, 64506–64501 (2007).
[CrossRef]

Stohr, A.

K. H. Tan, S. F. Yoon, W. K. Loke, S. Wicaksono, K. L. Lew, A. Stohr, O. Ecin, A. Poloczek, A. Malcoci, D. Jager, “High-speed picosecond pulse response GaNAsSb p-i-n photodetectors grown by rf plasma-assisted nitrogen molecular beam epitaxy,” Appl. Phys. Lett. 90, 183515–183511 (2007).
[CrossRef]

Streetman, B. G.

C. Hu, K. A. Anselm, B. G. Streetman, J. C. Campbell, “Noise characteristics of thin multiplication region GaAs avalanche photodiodes,” Appl. Phys. Lett. 69, 3734–3736 (1996).
[CrossRef]

Sweeney, S. J.

J. S. Ng, W. M. Soong, M. J. Steer, M. Hopkinson, J. P. R. David, J. Chamings, S. J. Sweeney, A. R. Adams, “Long wavelength bulk GaInNAs p-i-n photodiodes lattice matched to GaAs,” J. Appl. Phys. 101, 64506–64501 (2007).
[CrossRef]

Tan, K. H.

K. H. Tan, S. F. Yoon, W. K. Loke, S. Wicaksono, Z. Xu, T. K. Ng, K. L. Lew, N. Saadsaoud, M. Zegaoui, D. Decoster, J. Chazelas, “1.55µm GaAs/GaNAsSb/GaAs optical waveguides grown by radio frequency nitrogen plasma-assisted molecular beam epitaxy,” Appl. Phys. Lett. 92, 113513 (2008).
[CrossRef]

W. K. Loke, S. F. Yoon, K. H. Tan, S. Wicaksono, W. J. Fan, “Improvement of GaInNAs p-i-n photodetector responsivity by antimony incorporation,” J. Appl. Phys. 101, 33122–33121 (2007).
[CrossRef]

S. Wicaksono, S. F. Yoon, W. K. Loke, K. H. Tan, K. L. Lew, M. Zegaoui, J. P. Vilcot, D. Decoster, J. Chazelas, “Effect of growth temperature on defect states of GaAsSbN intrinsic layer in GaAs/GaAsSbN/GaAs photodiode for 1.3 µm application,” J. Appl. Phys. 102, 044505–044507 (2007).
[CrossRef]

K. H. Tan, S. F. Yoon, W. K. Loke, S. Wicaksono, K. L. Lew, A. Stohr, O. Ecin, A. Poloczek, A. Malcoci, D. Jager, “High-speed picosecond pulse response GaNAsSb p-i-n photodetectors grown by rf plasma-assisted nitrogen molecular beam epitaxy,” Appl. Phys. Lett. 90, 183515–183511 (2007).
[CrossRef]

S. Wicaksono, S. F. Yoon, W. K. Loke, K. H. Tan, B. K. Ng, “Effect of growth temperature on closely lattice-matched GaAsSbN intrinsic layer for GaAs-based 1.3 µm p-i-n photodetector,” J. Appl. Phys. 99, 104502–104501 (2006).
[CrossRef]

S. Wicaksono, S. F. Yoon, K. H. Tan, W. K. Loke, “Characterization of small-mismatch GaAsSbN on GaAs grown by solid source molecular beam epitaxy,” J. Vac. Sci. Technol. B 23, 1054–1059 (2005).
[CrossRef]

Tong, C. Z.

Q. Han, X. H. Yang, Z. C. Niu, H. Q. Ni, Y. Q. Xu, S. Y. Zhang, Y. Du, L. H. Peng, H. Zhao, C. Z. Tong, R. H. Wu, Q. M. Wang, “1.55 µm GaInNAs resonant-cavity-enhanced photodetector grown on GaAs,” Appl. Phys. Lett. 87, 111105–111101 (2005).
[CrossRef]

Tu, C. W.

W. M. Chen, I. A. Buyanova, C. W. Tu, H. Yonezu, “Point defects in dilute nitride III-N-As and III-N-P,” Physica B: Condensed Matter 376–377, 545–551 (2006).
[CrossRef]

Ulloa, J. M.

E. Luna, M. Hopkinson, J. M. Ulloa, A. Guzman, E. Munoz, “Dilute nitride based double-barrier quantumwell infrared photodetector operating in the near infrared,” Appl. Phys. Lett. 83, 3111–3113 (2003).
[CrossRef]

Vilcot, J. P.

S. Wicaksono, S. F. Yoon, W. K. Loke, K. H. Tan, K. L. Lew, M. Zegaoui, J. P. Vilcot, D. Decoster, J. Chazelas, “Effect of growth temperature on defect states of GaAsSbN intrinsic layer in GaAs/GaAsSbN/GaAs photodiode for 1.3 µm application,” J. Appl. Phys. 102, 044505–044507 (2007).
[CrossRef]

Wang, Q. M.

Q. Han, X. H. Yang, Z. C. Niu, H. Q. Ni, Y. Q. Xu, S. Y. Zhang, Y. Du, L. H. Peng, H. Zhao, C. Z. Tong, R. H. Wu, Q. M. Wang, “1.55 µm GaInNAs resonant-cavity-enhanced photodetector grown on GaAs,” Appl. Phys. Lett. 87, 111105–111101 (2005).
[CrossRef]

Wee, A. T. S.

W. K. Cheah, W. J. Fan, S. F. Yoon, D. H. Zhang, B. K. Ng, W. K. Loke, R. Liu, A. T. S. Wee, “GaAs-based heterojunction p-i-n photodetectors using pentanary InGaAsNSb as the intrinsic layer,” IEEE Photon. Technol. Lett. 17, 1932–1934 (2005).
[CrossRef]

Wicaksono, S.

K. H. Tan, S. F. Yoon, W. K. Loke, S. Wicaksono, Z. Xu, T. K. Ng, K. L. Lew, N. Saadsaoud, M. Zegaoui, D. Decoster, J. Chazelas, “1.55µm GaAs/GaNAsSb/GaAs optical waveguides grown by radio frequency nitrogen plasma-assisted molecular beam epitaxy,” Appl. Phys. Lett. 92, 113513 (2008).
[CrossRef]

S. Wicaksono, S. F. Yoon, W. K. Loke, K. H. Tan, K. L. Lew, M. Zegaoui, J. P. Vilcot, D. Decoster, J. Chazelas, “Effect of growth temperature on defect states of GaAsSbN intrinsic layer in GaAs/GaAsSbN/GaAs photodiode for 1.3 µm application,” J. Appl. Phys. 102, 044505–044507 (2007).
[CrossRef]

W. K. Loke, S. F. Yoon, K. H. Tan, S. Wicaksono, W. J. Fan, “Improvement of GaInNAs p-i-n photodetector responsivity by antimony incorporation,” J. Appl. Phys. 101, 33122–33121 (2007).
[CrossRef]

K. H. Tan, S. F. Yoon, W. K. Loke, S. Wicaksono, K. L. Lew, A. Stohr, O. Ecin, A. Poloczek, A. Malcoci, D. Jager, “High-speed picosecond pulse response GaNAsSb p-i-n photodetectors grown by rf plasma-assisted nitrogen molecular beam epitaxy,” Appl. Phys. Lett. 90, 183515–183511 (2007).
[CrossRef]

S. Wicaksono, S. F. Yoon, W. K. Loke, K. H. Tan, B. K. Ng, “Effect of growth temperature on closely lattice-matched GaAsSbN intrinsic layer for GaAs-based 1.3 µm p-i-n photodetector,” J. Appl. Phys. 99, 104502–104501 (2006).
[CrossRef]

W. K. Loke, S. F. Yoon, S. Wicaksono, B. K. Ng, “Characteristics of non-annealed λ=1.35 µm closely lattice-matched GaInNAs/GaAs p-i-n photodetector structures grown by solid-source molecular beam epitaxy,” Mater. Sci. Eng. B 131, 40–44 (2006).
[CrossRef]

Y. X. Dang, W. J. Fan, S. T. Ng, S. Wicaksono, S. F. Yoon, D. H. Zhang, “Study of interdiffusion in GaAsSbNGaAs quantum well structure by ten-band kp method,” J. Appl. Phys. 98, 026102 (2005).
[CrossRef]

S. Wicaksono, S. F. Yoon, K. H. Tan, W. K. Loke, “Characterization of small-mismatch GaAsSbN on GaAs grown by solid source molecular beam epitaxy,” J. Vac. Sci. Technol. B 23, 1054–1059 (2005).
[CrossRef]

Wong, M. M.

C. J. Collins, T. Li, D. J. H. Lambert, M. M. Wong, R. D. Dupuis, J. C. Campbell, “Selective regrowth of Al0.30Ga0.70N p-i-n photodiodes,” Appl. Phys. Lett. 77, 2810 (2000).

Wu, R. H.

Q. Han, X. H. Yang, Z. C. Niu, H. Q. Ni, Y. Q. Xu, S. Y. Zhang, Y. Du, L. H. Peng, H. Zhao, C. Z. Tong, R. H. Wu, Q. M. Wang, “1.55 µm GaInNAs resonant-cavity-enhanced photodetector grown on GaAs,” Appl. Phys. Lett. 87, 111105–111101 (2005).
[CrossRef]

Xu, Y. Q.

Q. Han, X. H. Yang, Z. C. Niu, H. Q. Ni, Y. Q. Xu, S. Y. Zhang, Y. Du, L. H. Peng, H. Zhao, C. Z. Tong, R. H. Wu, Q. M. Wang, “1.55 µm GaInNAs resonant-cavity-enhanced photodetector grown on GaAs,” Appl. Phys. Lett. 87, 111105–111101 (2005).
[CrossRef]

Xu, Z.

K. H. Tan, S. F. Yoon, W. K. Loke, S. Wicaksono, Z. Xu, T. K. Ng, K. L. Lew, N. Saadsaoud, M. Zegaoui, D. Decoster, J. Chazelas, “1.55µm GaAs/GaNAsSb/GaAs optical waveguides grown by radio frequency nitrogen plasma-assisted molecular beam epitaxy,” Appl. Phys. Lett. 92, 113513 (2008).
[CrossRef]

Yang, X. H.

Q. Han, X. H. Yang, Z. C. Niu, H. Q. Ni, Y. Q. Xu, S. Y. Zhang, Y. Du, L. H. Peng, H. Zhao, C. Z. Tong, R. H. Wu, Q. M. Wang, “1.55 µm GaInNAs resonant-cavity-enhanced photodetector grown on GaAs,” Appl. Phys. Lett. 87, 111105–111101 (2005).
[CrossRef]

Yonezu, H.

W. M. Chen, I. A. Buyanova, C. W. Tu, H. Yonezu, “Point defects in dilute nitride III-N-As and III-N-P,” Physica B: Condensed Matter 376–377, 545–551 (2006).
[CrossRef]

Yoon, S. F.

K. H. Tan, S. F. Yoon, W. K. Loke, S. Wicaksono, Z. Xu, T. K. Ng, K. L. Lew, N. Saadsaoud, M. Zegaoui, D. Decoster, J. Chazelas, “1.55µm GaAs/GaNAsSb/GaAs optical waveguides grown by radio frequency nitrogen plasma-assisted molecular beam epitaxy,” Appl. Phys. Lett. 92, 113513 (2008).
[CrossRef]

W. K. Loke, S. F. Yoon, K. H. Tan, S. Wicaksono, W. J. Fan, “Improvement of GaInNAs p-i-n photodetector responsivity by antimony incorporation,” J. Appl. Phys. 101, 33122–33121 (2007).
[CrossRef]

S. Wicaksono, S. F. Yoon, W. K. Loke, K. H. Tan, K. L. Lew, M. Zegaoui, J. P. Vilcot, D. Decoster, J. Chazelas, “Effect of growth temperature on defect states of GaAsSbN intrinsic layer in GaAs/GaAsSbN/GaAs photodiode for 1.3 µm application,” J. Appl. Phys. 102, 044505–044507 (2007).
[CrossRef]

K. H. Tan, S. F. Yoon, W. K. Loke, S. Wicaksono, K. L. Lew, A. Stohr, O. Ecin, A. Poloczek, A. Malcoci, D. Jager, “High-speed picosecond pulse response GaNAsSb p-i-n photodetectors grown by rf plasma-assisted nitrogen molecular beam epitaxy,” Appl. Phys. Lett. 90, 183515–183511 (2007).
[CrossRef]

S. Wicaksono, S. F. Yoon, W. K. Loke, K. H. Tan, B. K. Ng, “Effect of growth temperature on closely lattice-matched GaAsSbN intrinsic layer for GaAs-based 1.3 µm p-i-n photodetector,” J. Appl. Phys. 99, 104502–104501 (2006).
[CrossRef]

W. K. Loke, S. F. Yoon, S. Wicaksono, B. K. Ng, “Characteristics of non-annealed λ=1.35 µm closely lattice-matched GaInNAs/GaAs p-i-n photodetector structures grown by solid-source molecular beam epitaxy,” Mater. Sci. Eng. B 131, 40–44 (2006).
[CrossRef]

W. K. Cheah, W. J. Fan, S. F. Yoon, D. H. Zhang, B. K. Ng, W. K. Loke, R. Liu, A. T. S. Wee, “GaAs-based heterojunction p-i-n photodetectors using pentanary InGaAsNSb as the intrinsic layer,” IEEE Photon. Technol. Lett. 17, 1932–1934 (2005).
[CrossRef]

Y. X. Dang, W. J. Fan, S. T. Ng, S. Wicaksono, S. F. Yoon, D. H. Zhang, “Study of interdiffusion in GaAsSbNGaAs quantum well structure by ten-band kp method,” J. Appl. Phys. 98, 026102 (2005).
[CrossRef]

S. Wicaksono, S. F. Yoon, K. H. Tan, W. K. Loke, “Characterization of small-mismatch GaAsSbN on GaAs grown by solid source molecular beam epitaxy,” J. Vac. Sci. Technol. B 23, 1054–1059 (2005).
[CrossRef]

Zegaoui, M.

K. H. Tan, S. F. Yoon, W. K. Loke, S. Wicaksono, Z. Xu, T. K. Ng, K. L. Lew, N. Saadsaoud, M. Zegaoui, D. Decoster, J. Chazelas, “1.55µm GaAs/GaNAsSb/GaAs optical waveguides grown by radio frequency nitrogen plasma-assisted molecular beam epitaxy,” Appl. Phys. Lett. 92, 113513 (2008).
[CrossRef]

S. Wicaksono, S. F. Yoon, W. K. Loke, K. H. Tan, K. L. Lew, M. Zegaoui, J. P. Vilcot, D. Decoster, J. Chazelas, “Effect of growth temperature on defect states of GaAsSbN intrinsic layer in GaAs/GaAsSbN/GaAs photodiode for 1.3 µm application,” J. Appl. Phys. 102, 044505–044507 (2007).
[CrossRef]

Zhang, D. H.

W. K. Cheah, W. J. Fan, S. F. Yoon, D. H. Zhang, B. K. Ng, W. K. Loke, R. Liu, A. T. S. Wee, “GaAs-based heterojunction p-i-n photodetectors using pentanary InGaAsNSb as the intrinsic layer,” IEEE Photon. Technol. Lett. 17, 1932–1934 (2005).
[CrossRef]

Y. X. Dang, W. J. Fan, S. T. Ng, S. Wicaksono, S. F. Yoon, D. H. Zhang, “Study of interdiffusion in GaAsSbNGaAs quantum well structure by ten-band kp method,” J. Appl. Phys. 98, 026102 (2005).
[CrossRef]

Zhang, S. Y.

Q. Han, X. H. Yang, Z. C. Niu, H. Q. Ni, Y. Q. Xu, S. Y. Zhang, Y. Du, L. H. Peng, H. Zhao, C. Z. Tong, R. H. Wu, Q. M. Wang, “1.55 µm GaInNAs resonant-cavity-enhanced photodetector grown on GaAs,” Appl. Phys. Lett. 87, 111105–111101 (2005).
[CrossRef]

Zhao, H.

Q. Han, X. H. Yang, Z. C. Niu, H. Q. Ni, Y. Q. Xu, S. Y. Zhang, Y. Du, L. H. Peng, H. Zhao, C. Z. Tong, R. H. Wu, Q. M. Wang, “1.55 µm GaInNAs resonant-cavity-enhanced photodetector grown on GaAs,” Appl. Phys. Lett. 87, 111105–111101 (2005).
[CrossRef]

Appl. Phys. Lett.

E. Luna, M. Hopkinson, J. M. Ulloa, A. Guzman, E. Munoz, “Dilute nitride based double-barrier quantumwell infrared photodetector operating in the near infrared,” Appl. Phys. Lett. 83, 3111–3113 (2003).
[CrossRef]

H. Luo, J. A. Gupta, H. C. Liu, “1.55µm GaNAsSb photodetector on GaAs,” Appl. Phys. Lett. 86, 211121–211121 (2005).
[CrossRef]

Q. Han, X. H. Yang, Z. C. Niu, H. Q. Ni, Y. Q. Xu, S. Y. Zhang, Y. Du, L. H. Peng, H. Zhao, C. Z. Tong, R. H. Wu, Q. M. Wang, “1.55 µm GaInNAs resonant-cavity-enhanced photodetector grown on GaAs,” Appl. Phys. Lett. 87, 111105–111101 (2005).
[CrossRef]

K. H. Tan, S. F. Yoon, W. K. Loke, S. Wicaksono, K. L. Lew, A. Stohr, O. Ecin, A. Poloczek, A. Malcoci, D. Jager, “High-speed picosecond pulse response GaNAsSb p-i-n photodetectors grown by rf plasma-assisted nitrogen molecular beam epitaxy,” Appl. Phys. Lett. 90, 183515–183511 (2007).
[CrossRef]

K. H. Tan, S. F. Yoon, W. K. Loke, S. Wicaksono, Z. Xu, T. K. Ng, K. L. Lew, N. Saadsaoud, M. Zegaoui, D. Decoster, J. Chazelas, “1.55µm GaAs/GaNAsSb/GaAs optical waveguides grown by radio frequency nitrogen plasma-assisted molecular beam epitaxy,” Appl. Phys. Lett. 92, 113513 (2008).
[CrossRef]

C. Hu, K. A. Anselm, B. G. Streetman, J. C. Campbell, “Noise characteristics of thin multiplication region GaAs avalanche photodiodes,” Appl. Phys. Lett. 69, 3734–3736 (1996).
[CrossRef]

IEEE Photon. Technol. Lett.

W. K. Cheah, W. J. Fan, S. F. Yoon, D. H. Zhang, B. K. Ng, W. K. Loke, R. Liu, A. T. S. Wee, “GaAs-based heterojunction p-i-n photodetectors using pentanary InGaAsNSb as the intrinsic layer,” IEEE Photon. Technol. Lett. 17, 1932–1934 (2005).
[CrossRef]

J. Appl. Phys.

J. S. Ng, W. M. Soong, M. J. Steer, M. Hopkinson, J. P. R. David, J. Chamings, S. J. Sweeney, A. R. Adams, “Long wavelength bulk GaInNAs p-i-n photodiodes lattice matched to GaAs,” J. Appl. Phys. 101, 64506–64501 (2007).
[CrossRef]

Y. X. Dang, W. J. Fan, S. T. Ng, S. Wicaksono, S. F. Yoon, D. H. Zhang, “Study of interdiffusion in GaAsSbNGaAs quantum well structure by ten-band kp method,” J. Appl. Phys. 98, 026102 (2005).
[CrossRef]

W. K. Loke, S. F. Yoon, K. H. Tan, S. Wicaksono, W. J. Fan, “Improvement of GaInNAs p-i-n photodetector responsivity by antimony incorporation,” J. Appl. Phys. 101, 33122–33121 (2007).
[CrossRef]

S. Wicaksono, S. F. Yoon, W. K. Loke, K. H. Tan, B. K. Ng, “Effect of growth temperature on closely lattice-matched GaAsSbN intrinsic layer for GaAs-based 1.3 µm p-i-n photodetector,” J. Appl. Phys. 99, 104502–104501 (2006).
[CrossRef]

S. Wicaksono, S. F. Yoon, W. K. Loke, K. H. Tan, K. L. Lew, M. Zegaoui, J. P. Vilcot, D. Decoster, J. Chazelas, “Effect of growth temperature on defect states of GaAsSbN intrinsic layer in GaAs/GaAsSbN/GaAs photodiode for 1.3 µm application,” J. Appl. Phys. 102, 044505–044507 (2007).
[CrossRef]

J. S. Ng, J. P. R. David, G. J. Rees, J. Allam, “Avalanche breakdown voltage of In0.53Ga0.47As,” J. Appl. Phys. 91, 5200–5202 (2002).
[CrossRef]

L. Partain, D. Day, R. Powell, “Metastable impact ionization of traps model for lock-on in GaAs photoconductive switches,” J. Appl. Phys. 74, 335–340 (1993).
[CrossRef]

J. Vac. Sci. Technol. B

S. Wicaksono, S. F. Yoon, K. H. Tan, W. K. Loke, “Characterization of small-mismatch GaAsSbN on GaAs grown by solid source molecular beam epitaxy,” J. Vac. Sci. Technol. B 23, 1054–1059 (2005).
[CrossRef]

Mater. Sci. Eng. B

W. K. Loke, S. F. Yoon, S. Wicaksono, B. K. Ng, “Characteristics of non-annealed λ=1.35 µm closely lattice-matched GaInNAs/GaAs p-i-n photodetector structures grown by solid-source molecular beam epitaxy,” Mater. Sci. Eng. B 131, 40–44 (2006).
[CrossRef]

Physica B: Condensed Matter

W. M. Chen, I. A. Buyanova, C. W. Tu, H. Yonezu, “Point defects in dilute nitride III-N-As and III-N-P,” Physica B: Condensed Matter 376–377, 545–551 (2006).
[CrossRef]

Solid-State Electron.

W. Shockley, “Problems related to p-n junctions in silicon,” Solid-State Electron. 2, 35–67 (1961).
[CrossRef]

Other

C. J. Collins, T. Li, D. J. H. Lambert, M. M. Wong, R. D. Dupuis, J. C. Campbell, “Selective regrowth of Al0.30Ga0.70N p-i-n photodiodes,” Appl. Phys. Lett. 77, 2810 (2000).

Cited By

OSA participates in CrossRef's Cited-By Linking service. Citing articles from OSA journals and other participating publishers are listed here.

Alert me when this article is cited.


Figures (4)

Fig. 1.
Fig. 1.

Schematic diagram of GaAs/GaNAsSb/GaAs p-i-n photodetector structure.

Fig. 2.
Fig. 2.

(a) Plot of photoresponsivity vs. wavelength measured at a reverse bias of 3V for devices with i-GaNAsSb layer grown at 350°C, 400°C, 440°C and 480°C. (b) Plot of photoresponsivity vs. reverse bias measured at 1300nm for devices with i-GaNAsSb layer grown at 350°C, 400°C, 440°C and 480°C.

Fig. 3.
Fig. 3.

Plot of multiplication factor M as function of reverse bias voltage measured at 1300nm for devices with i-GaNAsSb layer grown at 350°C, 400°C, 440°C and 480°C.

Figure 4
Figure 4

Plot of multiplication factor M as function of average electric field measured at 1300nm for devices with i-GaNAsSb layer grown at 350°C, 400°C, 440°C and 480°C.

Metrics