Abstract

We present a design of monolithically integrated GeSi electro-absorption modulators and photodetectors for electronic-photonic integrated circuits on a silicon-on-insulator (SOI) platform. The GeSi electro-absorption modulator is based on the Franz-Keldysh effect, and the GeSi composition is chosen for optimal performance around 1550 nm. The designed modulator device is butt-coupled to Si(core)/SiO2(cladding) high index contrast waveguides, and has a predicted 3 dB bandwidth of >50 GHz and an extinction ratio of 10 dB. The same device structure can also be used for a waveguide-coupled photodetector with a predicted responsivity of > 1 A/W and a 3 dB bandwidth of > 35 GHz. Use of the same GeSi composition and device structure allows efficient monolithic process integration of the modulators and the photodetectors on an SOI platform.

© 2007 Optical Society of America

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References

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    [Crossref]
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    [Crossref] [PubMed]
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    [Crossref] [PubMed]
  5. J. F. Liu, D. Ahn, C. Y. Hong, S. Jongthanmmanurak, D. Pan, M. Beals, L. C. Kimerling, J. Michel, A. T. Pomerene, C. Hill, M. Jaso, K. Y. Tu, Y. K. Chen, S. Patel, M. Rasras, A. White, and D. M. Gill, “Waveguide-integrated Ge p-i-n photodetectors on Si,” 3rd IEEE International Conference on Group IV Photonics (IEEE Cat. No. 06EX1276C), Ottawa, ON, Canada, 13-15 Sept. 2006, pp.173–175.
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    [Crossref] [PubMed]
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    [Crossref]
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    [Crossref]
  10. J. F. Lampin, L. Desplanque, and F. Mollot, “Detection of picosecond electrical pulses using the intrinsic Franz-Keldysh effect,” Appl. Phys. Lett. 78,4103–4105 (2001).
    [Crossref]
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    [Crossref]
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    [Crossref]
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    [Crossref]
  17. A. S. Kyuregyan and S. N. Yurkov, “Room-temperature avalanche breakdown voltages of Si, Ge, SiC, GaAs, GaP and InP,” Sov. Phys. Semicond 23,1126–1132 (1989).
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    [Crossref]

2006 (2)

L. C. Kimerling, D. Aim, A. B. Apsel, M. Beals, D. Carothers, Y-K. Chen, T. Conway, D. M. Gill, M. Grove, C-Y Hong, M. Lipson, J. Liu, J. Michel, D. Pan, S. S. Patel, A. T. Pomerene, M. Rasras, D. K. Sparacin, K-Y. Tu, A. E. White, and C. W. Wong, “Electronic-photonic integrated circuits on the CMOS platform,” Proc. SPIE 6125,612502 (2006).
[Crossref]

S. Jongthanmmanurak, J. F. Liu, K. Wada, D. D. Cannon, D. T. Danielson, D. Pan, L. C. Kimeriling, and J. Michel, “Large electro-optic effect in tensile strained Ge-on-Si films,” Appl. Phys. Lett. 89,161115 (2006).
[Crossref]

2005 (2)

Y.-H. Kuo, Y. K. Lee, Y. Ge, S. Ren, J. E. Roth, T. I. Kamins, D. A. B. Miller, and J. S. Harris, “Strong quantum-confined Stark effect in germanium quantum-well structures on silicon,” Nature 437,1334–1336 (2005).
[Crossref] [PubMed]

Q. Xu, B. Schmidt, S. Pradhan, and M. Lipson, “Micrometre-scale silicon electro-optic modulator,” Nature 435,325–327 (2005).
[Crossref] [PubMed]

2004 (2)

A. Liu, R. Jones, L. Liao, D. Samara-Rubio, D. Rubin, O. Cohen, R. Nicolaescu, and M. Paniccia, “A high-speed silicon optical modulator based on metal-oxide-semiconductor capacitor,” Nature 427,615–618 (2004).
[Crossref] [PubMed]

J. F. Liu, D. D. Cannon, K. Wada, Y. Ishikawa, D. T. Danielson, S. Jongthammanurak, J. Michel, and L C. Kimerling, “Deformation potential constants of biaxially tensile stressed Ge epitaxial films on Si (100),” Phys. Rev B 70,155309 (2004).
[Crossref]

2003 (2)

Y. Ishikawa, K. Wada, D. D. Cannon, J. F. Liu, H. C. Luan, and L. C. Kimerling, “Strain-induced direct band gap shrinkage in Ge grown on Si substrate,” Appl. Phys. Lett. 82,2044–2046 (2003).
[Crossref]

V. R. Almeida, R. R. Panepucci, and M. Lipson, “Nanotaper for compact mode conversion,” Opt. Lett. 28,1302–1304(2003).
[Crossref] [PubMed]

2002 (1)

G. Freeman, M. Meghelli, Y. Kwark, S. Zier, A. Rylyakov, J. S. Soma, T. Tanji, O. M. Schreiber, K. Walder, J. S. Rieh, B. Jaganathan, A. Joseph, and S. Subbannas, “40-Gb/s circuits built from a 120-GHzfT SiGe technology,” IEEE. J. Solid-St. Circ. 37,1106–1114(2002).
[Crossref]

2001 (1)

J. F. Lampin, L. Desplanque, and F. Mollot, “Detection of picosecond electrical pulses using the intrinsic Franz-Keldysh effect,” Appl. Phys. Lett. 78,4103–4105 (2001).
[Crossref]

1993 (1)

R. A. Soref, “Silicon-based optoelectronics,” Proc. IEEE. 81,1687–1706 (1993).
[Crossref]

1990 (1)

H. Shen and F. H. Pollak, “Generalized Franz-Keldysh theory of electromodulation,” Phys. Rev. B 42,7097–7102 (1990).
[Crossref]

1989 (1)

A. S. Kyuregyan and S. N. Yurkov, “Room-temperature avalanche breakdown voltages of Si, Ge, SiC, GaAs, GaP and InP,” Sov. Phys. Semicond 23,1126–1132 (1989).

1971 (1)

P. Lawaetz, “Valence-band parameters in cubic semiconductors,” Phy. Rev. B 4,3460–3467 (1971).
[Crossref]

1968 (1)

F. H. Pollak and M. Cardona, “Piezo-electroreflectance in Ge, GaAs and Si,” Phys. Rev. 172,816–837 (1968).
[Crossref]

1966 (1)

A. Frova, P. Handler, F. A. Germano, and D. E. Aspnes, “Electro-absorption effect at the band edges of silicon and germanium,” Phys. Rev. 145,575–583 (1966).
[Crossref]

Ahn, D.

J. F. Liu, D. Ahn, C. Y. Hong, S. Jongthanmmanurak, D. Pan, M. Beals, L. C. Kimerling, J. Michel, A. T. Pomerene, C. Hill, M. Jaso, K. Y. Tu, Y. K. Chen, S. Patel, M. Rasras, A. White, and D. M. Gill, “Waveguide-integrated Ge p-i-n photodetectors on Si,” 3rd IEEE International Conference on Group IV Photonics (IEEE Cat. No. 06EX1276C), Ottawa, ON, Canada, 13-15 Sept. 2006, pp.173–175.

Aim, D.

L. C. Kimerling, D. Aim, A. B. Apsel, M. Beals, D. Carothers, Y-K. Chen, T. Conway, D. M. Gill, M. Grove, C-Y Hong, M. Lipson, J. Liu, J. Michel, D. Pan, S. S. Patel, A. T. Pomerene, M. Rasras, D. K. Sparacin, K-Y. Tu, A. E. White, and C. W. Wong, “Electronic-photonic integrated circuits on the CMOS platform,” Proc. SPIE 6125,612502 (2006).
[Crossref]

Almeida, V. R.

Apsel, A. B.

L. C. Kimerling, D. Aim, A. B. Apsel, M. Beals, D. Carothers, Y-K. Chen, T. Conway, D. M. Gill, M. Grove, C-Y Hong, M. Lipson, J. Liu, J. Michel, D. Pan, S. S. Patel, A. T. Pomerene, M. Rasras, D. K. Sparacin, K-Y. Tu, A. E. White, and C. W. Wong, “Electronic-photonic integrated circuits on the CMOS platform,” Proc. SPIE 6125,612502 (2006).
[Crossref]

Aspnes, D. E.

A. Frova, P. Handler, F. A. Germano, and D. E. Aspnes, “Electro-absorption effect at the band edges of silicon and germanium,” Phys. Rev. 145,575–583 (1966).
[Crossref]

Beals, M.

L. C. Kimerling, D. Aim, A. B. Apsel, M. Beals, D. Carothers, Y-K. Chen, T. Conway, D. M. Gill, M. Grove, C-Y Hong, M. Lipson, J. Liu, J. Michel, D. Pan, S. S. Patel, A. T. Pomerene, M. Rasras, D. K. Sparacin, K-Y. Tu, A. E. White, and C. W. Wong, “Electronic-photonic integrated circuits on the CMOS platform,” Proc. SPIE 6125,612502 (2006).
[Crossref]

J. F. Liu, D. Ahn, C. Y. Hong, S. Jongthanmmanurak, D. Pan, M. Beals, L. C. Kimerling, J. Michel, A. T. Pomerene, C. Hill, M. Jaso, K. Y. Tu, Y. K. Chen, S. Patel, M. Rasras, A. White, and D. M. Gill, “Waveguide-integrated Ge p-i-n photodetectors on Si,” 3rd IEEE International Conference on Group IV Photonics (IEEE Cat. No. 06EX1276C), Ottawa, ON, Canada, 13-15 Sept. 2006, pp.173–175.

Cannon, D. D.

S. Jongthanmmanurak, J. F. Liu, K. Wada, D. D. Cannon, D. T. Danielson, D. Pan, L. C. Kimeriling, and J. Michel, “Large electro-optic effect in tensile strained Ge-on-Si films,” Appl. Phys. Lett. 89,161115 (2006).
[Crossref]

J. F. Liu, D. D. Cannon, K. Wada, Y. Ishikawa, D. T. Danielson, S. Jongthammanurak, J. Michel, and L C. Kimerling, “Deformation potential constants of biaxially tensile stressed Ge epitaxial films on Si (100),” Phys. Rev B 70,155309 (2004).
[Crossref]

Y. Ishikawa, K. Wada, D. D. Cannon, J. F. Liu, H. C. Luan, and L. C. Kimerling, “Strain-induced direct band gap shrinkage in Ge grown on Si substrate,” Appl. Phys. Lett. 82,2044–2046 (2003).
[Crossref]

Cardona, M.

F. H. Pollak and M. Cardona, “Piezo-electroreflectance in Ge, GaAs and Si,” Phys. Rev. 172,816–837 (1968).
[Crossref]

Carothers, D.

L. C. Kimerling, D. Aim, A. B. Apsel, M. Beals, D. Carothers, Y-K. Chen, T. Conway, D. M. Gill, M. Grove, C-Y Hong, M. Lipson, J. Liu, J. Michel, D. Pan, S. S. Patel, A. T. Pomerene, M. Rasras, D. K. Sparacin, K-Y. Tu, A. E. White, and C. W. Wong, “Electronic-photonic integrated circuits on the CMOS platform,” Proc. SPIE 6125,612502 (2006).
[Crossref]

Chen, Y. K.

J. F. Liu, D. Ahn, C. Y. Hong, S. Jongthanmmanurak, D. Pan, M. Beals, L. C. Kimerling, J. Michel, A. T. Pomerene, C. Hill, M. Jaso, K. Y. Tu, Y. K. Chen, S. Patel, M. Rasras, A. White, and D. M. Gill, “Waveguide-integrated Ge p-i-n photodetectors on Si,” 3rd IEEE International Conference on Group IV Photonics (IEEE Cat. No. 06EX1276C), Ottawa, ON, Canada, 13-15 Sept. 2006, pp.173–175.

Chen, Y-K.

L. C. Kimerling, D. Aim, A. B. Apsel, M. Beals, D. Carothers, Y-K. Chen, T. Conway, D. M. Gill, M. Grove, C-Y Hong, M. Lipson, J. Liu, J. Michel, D. Pan, S. S. Patel, A. T. Pomerene, M. Rasras, D. K. Sparacin, K-Y. Tu, A. E. White, and C. W. Wong, “Electronic-photonic integrated circuits on the CMOS platform,” Proc. SPIE 6125,612502 (2006).
[Crossref]

Cohen, O.

A. Liu, R. Jones, L. Liao, D. Samara-Rubio, D. Rubin, O. Cohen, R. Nicolaescu, and M. Paniccia, “A high-speed silicon optical modulator based on metal-oxide-semiconductor capacitor,” Nature 427,615–618 (2004).
[Crossref] [PubMed]

Conway, T.

L. C. Kimerling, D. Aim, A. B. Apsel, M. Beals, D. Carothers, Y-K. Chen, T. Conway, D. M. Gill, M. Grove, C-Y Hong, M. Lipson, J. Liu, J. Michel, D. Pan, S. S. Patel, A. T. Pomerene, M. Rasras, D. K. Sparacin, K-Y. Tu, A. E. White, and C. W. Wong, “Electronic-photonic integrated circuits on the CMOS platform,” Proc. SPIE 6125,612502 (2006).
[Crossref]

Danielson, D. T.

S. Jongthanmmanurak, J. F. Liu, K. Wada, D. D. Cannon, D. T. Danielson, D. Pan, L. C. Kimeriling, and J. Michel, “Large electro-optic effect in tensile strained Ge-on-Si films,” Appl. Phys. Lett. 89,161115 (2006).
[Crossref]

J. F. Liu, D. D. Cannon, K. Wada, Y. Ishikawa, D. T. Danielson, S. Jongthammanurak, J. Michel, and L C. Kimerling, “Deformation potential constants of biaxially tensile stressed Ge epitaxial films on Si (100),” Phys. Rev B 70,155309 (2004).
[Crossref]

Desplanque, L.

J. F. Lampin, L. Desplanque, and F. Mollot, “Detection of picosecond electrical pulses using the intrinsic Franz-Keldysh effect,” Appl. Phys. Lett. 78,4103–4105 (2001).
[Crossref]

Freeman, G.

G. Freeman, M. Meghelli, Y. Kwark, S. Zier, A. Rylyakov, J. S. Soma, T. Tanji, O. M. Schreiber, K. Walder, J. S. Rieh, B. Jaganathan, A. Joseph, and S. Subbannas, “40-Gb/s circuits built from a 120-GHzfT SiGe technology,” IEEE. J. Solid-St. Circ. 37,1106–1114(2002).
[Crossref]

Frova, A.

A. Frova, P. Handler, F. A. Germano, and D. E. Aspnes, “Electro-absorption effect at the band edges of silicon and germanium,” Phys. Rev. 145,575–583 (1966).
[Crossref]

Ge, Y.

Y.-H. Kuo, Y. K. Lee, Y. Ge, S. Ren, J. E. Roth, T. I. Kamins, D. A. B. Miller, and J. S. Harris, “Strong quantum-confined Stark effect in germanium quantum-well structures on silicon,” Nature 437,1334–1336 (2005).
[Crossref] [PubMed]

Germano, F. A.

A. Frova, P. Handler, F. A. Germano, and D. E. Aspnes, “Electro-absorption effect at the band edges of silicon and germanium,” Phys. Rev. 145,575–583 (1966).
[Crossref]

Gill, D. M.

L. C. Kimerling, D. Aim, A. B. Apsel, M. Beals, D. Carothers, Y-K. Chen, T. Conway, D. M. Gill, M. Grove, C-Y Hong, M. Lipson, J. Liu, J. Michel, D. Pan, S. S. Patel, A. T. Pomerene, M. Rasras, D. K. Sparacin, K-Y. Tu, A. E. White, and C. W. Wong, “Electronic-photonic integrated circuits on the CMOS platform,” Proc. SPIE 6125,612502 (2006).
[Crossref]

J. F. Liu, D. Ahn, C. Y. Hong, S. Jongthanmmanurak, D. Pan, M. Beals, L. C. Kimerling, J. Michel, A. T. Pomerene, C. Hill, M. Jaso, K. Y. Tu, Y. K. Chen, S. Patel, M. Rasras, A. White, and D. M. Gill, “Waveguide-integrated Ge p-i-n photodetectors on Si,” 3rd IEEE International Conference on Group IV Photonics (IEEE Cat. No. 06EX1276C), Ottawa, ON, Canada, 13-15 Sept. 2006, pp.173–175.

Grove, M.

L. C. Kimerling, D. Aim, A. B. Apsel, M. Beals, D. Carothers, Y-K. Chen, T. Conway, D. M. Gill, M. Grove, C-Y Hong, M. Lipson, J. Liu, J. Michel, D. Pan, S. S. Patel, A. T. Pomerene, M. Rasras, D. K. Sparacin, K-Y. Tu, A. E. White, and C. W. Wong, “Electronic-photonic integrated circuits on the CMOS platform,” Proc. SPIE 6125,612502 (2006).
[Crossref]

Handler, P.

A. Frova, P. Handler, F. A. Germano, and D. E. Aspnes, “Electro-absorption effect at the band edges of silicon and germanium,” Phys. Rev. 145,575–583 (1966).
[Crossref]

Harris, J. S.

Y.-H. Kuo, Y. K. Lee, Y. Ge, S. Ren, J. E. Roth, T. I. Kamins, D. A. B. Miller, and J. S. Harris, “Strong quantum-confined Stark effect in germanium quantum-well structures on silicon,” Nature 437,1334–1336 (2005).
[Crossref] [PubMed]

Hill, C.

J. F. Liu, D. Ahn, C. Y. Hong, S. Jongthanmmanurak, D. Pan, M. Beals, L. C. Kimerling, J. Michel, A. T. Pomerene, C. Hill, M. Jaso, K. Y. Tu, Y. K. Chen, S. Patel, M. Rasras, A. White, and D. M. Gill, “Waveguide-integrated Ge p-i-n photodetectors on Si,” 3rd IEEE International Conference on Group IV Photonics (IEEE Cat. No. 06EX1276C), Ottawa, ON, Canada, 13-15 Sept. 2006, pp.173–175.

Hong, C. Y.

J. F. Liu, D. Ahn, C. Y. Hong, S. Jongthanmmanurak, D. Pan, M. Beals, L. C. Kimerling, J. Michel, A. T. Pomerene, C. Hill, M. Jaso, K. Y. Tu, Y. K. Chen, S. Patel, M. Rasras, A. White, and D. M. Gill, “Waveguide-integrated Ge p-i-n photodetectors on Si,” 3rd IEEE International Conference on Group IV Photonics (IEEE Cat. No. 06EX1276C), Ottawa, ON, Canada, 13-15 Sept. 2006, pp.173–175.

Hong, C-Y

L. C. Kimerling, D. Aim, A. B. Apsel, M. Beals, D. Carothers, Y-K. Chen, T. Conway, D. M. Gill, M. Grove, C-Y Hong, M. Lipson, J. Liu, J. Michel, D. Pan, S. S. Patel, A. T. Pomerene, M. Rasras, D. K. Sparacin, K-Y. Tu, A. E. White, and C. W. Wong, “Electronic-photonic integrated circuits on the CMOS platform,” Proc. SPIE 6125,612502 (2006).
[Crossref]

Ishikawa, Y.

J. F. Liu, D. D. Cannon, K. Wada, Y. Ishikawa, D. T. Danielson, S. Jongthammanurak, J. Michel, and L C. Kimerling, “Deformation potential constants of biaxially tensile stressed Ge epitaxial films on Si (100),” Phys. Rev B 70,155309 (2004).
[Crossref]

Y. Ishikawa, K. Wada, D. D. Cannon, J. F. Liu, H. C. Luan, and L. C. Kimerling, “Strain-induced direct band gap shrinkage in Ge grown on Si substrate,” Appl. Phys. Lett. 82,2044–2046 (2003).
[Crossref]

Jaganathan, B.

G. Freeman, M. Meghelli, Y. Kwark, S. Zier, A. Rylyakov, J. S. Soma, T. Tanji, O. M. Schreiber, K. Walder, J. S. Rieh, B. Jaganathan, A. Joseph, and S. Subbannas, “40-Gb/s circuits built from a 120-GHzfT SiGe technology,” IEEE. J. Solid-St. Circ. 37,1106–1114(2002).
[Crossref]

Jaso, M.

J. F. Liu, D. Ahn, C. Y. Hong, S. Jongthanmmanurak, D. Pan, M. Beals, L. C. Kimerling, J. Michel, A. T. Pomerene, C. Hill, M. Jaso, K. Y. Tu, Y. K. Chen, S. Patel, M. Rasras, A. White, and D. M. Gill, “Waveguide-integrated Ge p-i-n photodetectors on Si,” 3rd IEEE International Conference on Group IV Photonics (IEEE Cat. No. 06EX1276C), Ottawa, ON, Canada, 13-15 Sept. 2006, pp.173–175.

Jones, R.

A. Liu, R. Jones, L. Liao, D. Samara-Rubio, D. Rubin, O. Cohen, R. Nicolaescu, and M. Paniccia, “A high-speed silicon optical modulator based on metal-oxide-semiconductor capacitor,” Nature 427,615–618 (2004).
[Crossref] [PubMed]

Jongthammanurak, S.

J. F. Liu, D. D. Cannon, K. Wada, Y. Ishikawa, D. T. Danielson, S. Jongthammanurak, J. Michel, and L C. Kimerling, “Deformation potential constants of biaxially tensile stressed Ge epitaxial films on Si (100),” Phys. Rev B 70,155309 (2004).
[Crossref]

Jongthanmmanurak, S.

S. Jongthanmmanurak, J. F. Liu, K. Wada, D. D. Cannon, D. T. Danielson, D. Pan, L. C. Kimeriling, and J. Michel, “Large electro-optic effect in tensile strained Ge-on-Si films,” Appl. Phys. Lett. 89,161115 (2006).
[Crossref]

J. F. Liu, D. Ahn, C. Y. Hong, S. Jongthanmmanurak, D. Pan, M. Beals, L. C. Kimerling, J. Michel, A. T. Pomerene, C. Hill, M. Jaso, K. Y. Tu, Y. K. Chen, S. Patel, M. Rasras, A. White, and D. M. Gill, “Waveguide-integrated Ge p-i-n photodetectors on Si,” 3rd IEEE International Conference on Group IV Photonics (IEEE Cat. No. 06EX1276C), Ottawa, ON, Canada, 13-15 Sept. 2006, pp.173–175.

Joseph, A.

G. Freeman, M. Meghelli, Y. Kwark, S. Zier, A. Rylyakov, J. S. Soma, T. Tanji, O. M. Schreiber, K. Walder, J. S. Rieh, B. Jaganathan, A. Joseph, and S. Subbannas, “40-Gb/s circuits built from a 120-GHzfT SiGe technology,” IEEE. J. Solid-St. Circ. 37,1106–1114(2002).
[Crossref]

Kamins, T. I.

Y.-H. Kuo, Y. K. Lee, Y. Ge, S. Ren, J. E. Roth, T. I. Kamins, D. A. B. Miller, and J. S. Harris, “Strong quantum-confined Stark effect in germanium quantum-well structures on silicon,” Nature 437,1334–1336 (2005).
[Crossref] [PubMed]

Kimeriling, L. C.

S. Jongthanmmanurak, J. F. Liu, K. Wada, D. D. Cannon, D. T. Danielson, D. Pan, L. C. Kimeriling, and J. Michel, “Large electro-optic effect in tensile strained Ge-on-Si films,” Appl. Phys. Lett. 89,161115 (2006).
[Crossref]

Kimerling, L C.

J. F. Liu, D. D. Cannon, K. Wada, Y. Ishikawa, D. T. Danielson, S. Jongthammanurak, J. Michel, and L C. Kimerling, “Deformation potential constants of biaxially tensile stressed Ge epitaxial films on Si (100),” Phys. Rev B 70,155309 (2004).
[Crossref]

Kimerling, L. C.

L. C. Kimerling, D. Aim, A. B. Apsel, M. Beals, D. Carothers, Y-K. Chen, T. Conway, D. M. Gill, M. Grove, C-Y Hong, M. Lipson, J. Liu, J. Michel, D. Pan, S. S. Patel, A. T. Pomerene, M. Rasras, D. K. Sparacin, K-Y. Tu, A. E. White, and C. W. Wong, “Electronic-photonic integrated circuits on the CMOS platform,” Proc. SPIE 6125,612502 (2006).
[Crossref]

Y. Ishikawa, K. Wada, D. D. Cannon, J. F. Liu, H. C. Luan, and L. C. Kimerling, “Strain-induced direct band gap shrinkage in Ge grown on Si substrate,” Appl. Phys. Lett. 82,2044–2046 (2003).
[Crossref]

J. F. Liu, D. Ahn, C. Y. Hong, S. Jongthanmmanurak, D. Pan, M. Beals, L. C. Kimerling, J. Michel, A. T. Pomerene, C. Hill, M. Jaso, K. Y. Tu, Y. K. Chen, S. Patel, M. Rasras, A. White, and D. M. Gill, “Waveguide-integrated Ge p-i-n photodetectors on Si,” 3rd IEEE International Conference on Group IV Photonics (IEEE Cat. No. 06EX1276C), Ottawa, ON, Canada, 13-15 Sept. 2006, pp.173–175.

Kuo, Y.-H.

Y.-H. Kuo, Y. K. Lee, Y. Ge, S. Ren, J. E. Roth, T. I. Kamins, D. A. B. Miller, and J. S. Harris, “Strong quantum-confined Stark effect in germanium quantum-well structures on silicon,” Nature 437,1334–1336 (2005).
[Crossref] [PubMed]

Kwark, Y.

G. Freeman, M. Meghelli, Y. Kwark, S. Zier, A. Rylyakov, J. S. Soma, T. Tanji, O. M. Schreiber, K. Walder, J. S. Rieh, B. Jaganathan, A. Joseph, and S. Subbannas, “40-Gb/s circuits built from a 120-GHzfT SiGe technology,” IEEE. J. Solid-St. Circ. 37,1106–1114(2002).
[Crossref]

Kyuregyan, A. S.

A. S. Kyuregyan and S. N. Yurkov, “Room-temperature avalanche breakdown voltages of Si, Ge, SiC, GaAs, GaP and InP,” Sov. Phys. Semicond 23,1126–1132 (1989).

Lampin, J. F.

J. F. Lampin, L. Desplanque, and F. Mollot, “Detection of picosecond electrical pulses using the intrinsic Franz-Keldysh effect,” Appl. Phys. Lett. 78,4103–4105 (2001).
[Crossref]

Lawaetz, P.

P. Lawaetz, “Valence-band parameters in cubic semiconductors,” Phy. Rev. B 4,3460–3467 (1971).
[Crossref]

Lee, Y. K.

Y.-H. Kuo, Y. K. Lee, Y. Ge, S. Ren, J. E. Roth, T. I. Kamins, D. A. B. Miller, and J. S. Harris, “Strong quantum-confined Stark effect in germanium quantum-well structures on silicon,” Nature 437,1334–1336 (2005).
[Crossref] [PubMed]

Liao, L.

A. Liu, R. Jones, L. Liao, D. Samara-Rubio, D. Rubin, O. Cohen, R. Nicolaescu, and M. Paniccia, “A high-speed silicon optical modulator based on metal-oxide-semiconductor capacitor,” Nature 427,615–618 (2004).
[Crossref] [PubMed]

Lipson, M.

L. C. Kimerling, D. Aim, A. B. Apsel, M. Beals, D. Carothers, Y-K. Chen, T. Conway, D. M. Gill, M. Grove, C-Y Hong, M. Lipson, J. Liu, J. Michel, D. Pan, S. S. Patel, A. T. Pomerene, M. Rasras, D. K. Sparacin, K-Y. Tu, A. E. White, and C. W. Wong, “Electronic-photonic integrated circuits on the CMOS platform,” Proc. SPIE 6125,612502 (2006).
[Crossref]

Q. Xu, B. Schmidt, S. Pradhan, and M. Lipson, “Micrometre-scale silicon electro-optic modulator,” Nature 435,325–327 (2005).
[Crossref] [PubMed]

V. R. Almeida, R. R. Panepucci, and M. Lipson, “Nanotaper for compact mode conversion,” Opt. Lett. 28,1302–1304(2003).
[Crossref] [PubMed]

Liu, A.

A. Liu, R. Jones, L. Liao, D. Samara-Rubio, D. Rubin, O. Cohen, R. Nicolaescu, and M. Paniccia, “A high-speed silicon optical modulator based on metal-oxide-semiconductor capacitor,” Nature 427,615–618 (2004).
[Crossref] [PubMed]

Liu, J.

L. C. Kimerling, D. Aim, A. B. Apsel, M. Beals, D. Carothers, Y-K. Chen, T. Conway, D. M. Gill, M. Grove, C-Y Hong, M. Lipson, J. Liu, J. Michel, D. Pan, S. S. Patel, A. T. Pomerene, M. Rasras, D. K. Sparacin, K-Y. Tu, A. E. White, and C. W. Wong, “Electronic-photonic integrated circuits on the CMOS platform,” Proc. SPIE 6125,612502 (2006).
[Crossref]

Liu, J. F.

S. Jongthanmmanurak, J. F. Liu, K. Wada, D. D. Cannon, D. T. Danielson, D. Pan, L. C. Kimeriling, and J. Michel, “Large electro-optic effect in tensile strained Ge-on-Si films,” Appl. Phys. Lett. 89,161115 (2006).
[Crossref]

J. F. Liu, D. D. Cannon, K. Wada, Y. Ishikawa, D. T. Danielson, S. Jongthammanurak, J. Michel, and L C. Kimerling, “Deformation potential constants of biaxially tensile stressed Ge epitaxial films on Si (100),” Phys. Rev B 70,155309 (2004).
[Crossref]

Y. Ishikawa, K. Wada, D. D. Cannon, J. F. Liu, H. C. Luan, and L. C. Kimerling, “Strain-induced direct band gap shrinkage in Ge grown on Si substrate,” Appl. Phys. Lett. 82,2044–2046 (2003).
[Crossref]

J. F. Liu, D. Ahn, C. Y. Hong, S. Jongthanmmanurak, D. Pan, M. Beals, L. C. Kimerling, J. Michel, A. T. Pomerene, C. Hill, M. Jaso, K. Y. Tu, Y. K. Chen, S. Patel, M. Rasras, A. White, and D. M. Gill, “Waveguide-integrated Ge p-i-n photodetectors on Si,” 3rd IEEE International Conference on Group IV Photonics (IEEE Cat. No. 06EX1276C), Ottawa, ON, Canada, 13-15 Sept. 2006, pp.173–175.

Luan, H. C.

Y. Ishikawa, K. Wada, D. D. Cannon, J. F. Liu, H. C. Luan, and L. C. Kimerling, “Strain-induced direct band gap shrinkage in Ge grown on Si substrate,” Appl. Phys. Lett. 82,2044–2046 (2003).
[Crossref]

Meghelli, M.

G. Freeman, M. Meghelli, Y. Kwark, S. Zier, A. Rylyakov, J. S. Soma, T. Tanji, O. M. Schreiber, K. Walder, J. S. Rieh, B. Jaganathan, A. Joseph, and S. Subbannas, “40-Gb/s circuits built from a 120-GHzfT SiGe technology,” IEEE. J. Solid-St. Circ. 37,1106–1114(2002).
[Crossref]

Michel, J.

S. Jongthanmmanurak, J. F. Liu, K. Wada, D. D. Cannon, D. T. Danielson, D. Pan, L. C. Kimeriling, and J. Michel, “Large electro-optic effect in tensile strained Ge-on-Si films,” Appl. Phys. Lett. 89,161115 (2006).
[Crossref]

L. C. Kimerling, D. Aim, A. B. Apsel, M. Beals, D. Carothers, Y-K. Chen, T. Conway, D. M. Gill, M. Grove, C-Y Hong, M. Lipson, J. Liu, J. Michel, D. Pan, S. S. Patel, A. T. Pomerene, M. Rasras, D. K. Sparacin, K-Y. Tu, A. E. White, and C. W. Wong, “Electronic-photonic integrated circuits on the CMOS platform,” Proc. SPIE 6125,612502 (2006).
[Crossref]

J. F. Liu, D. D. Cannon, K. Wada, Y. Ishikawa, D. T. Danielson, S. Jongthammanurak, J. Michel, and L C. Kimerling, “Deformation potential constants of biaxially tensile stressed Ge epitaxial films on Si (100),” Phys. Rev B 70,155309 (2004).
[Crossref]

J. F. Liu, D. Ahn, C. Y. Hong, S. Jongthanmmanurak, D. Pan, M. Beals, L. C. Kimerling, J. Michel, A. T. Pomerene, C. Hill, M. Jaso, K. Y. Tu, Y. K. Chen, S. Patel, M. Rasras, A. White, and D. M. Gill, “Waveguide-integrated Ge p-i-n photodetectors on Si,” 3rd IEEE International Conference on Group IV Photonics (IEEE Cat. No. 06EX1276C), Ottawa, ON, Canada, 13-15 Sept. 2006, pp.173–175.

Miller, D. A. B.

Y.-H. Kuo, Y. K. Lee, Y. Ge, S. Ren, J. E. Roth, T. I. Kamins, D. A. B. Miller, and J. S. Harris, “Strong quantum-confined Stark effect in germanium quantum-well structures on silicon,” Nature 437,1334–1336 (2005).
[Crossref] [PubMed]

Mollot, F.

J. F. Lampin, L. Desplanque, and F. Mollot, “Detection of picosecond electrical pulses using the intrinsic Franz-Keldysh effect,” Appl. Phys. Lett. 78,4103–4105 (2001).
[Crossref]

Nicolaescu, R.

A. Liu, R. Jones, L. Liao, D. Samara-Rubio, D. Rubin, O. Cohen, R. Nicolaescu, and M. Paniccia, “A high-speed silicon optical modulator based on metal-oxide-semiconductor capacitor,” Nature 427,615–618 (2004).
[Crossref] [PubMed]

Pan, D.

L. C. Kimerling, D. Aim, A. B. Apsel, M. Beals, D. Carothers, Y-K. Chen, T. Conway, D. M. Gill, M. Grove, C-Y Hong, M. Lipson, J. Liu, J. Michel, D. Pan, S. S. Patel, A. T. Pomerene, M. Rasras, D. K. Sparacin, K-Y. Tu, A. E. White, and C. W. Wong, “Electronic-photonic integrated circuits on the CMOS platform,” Proc. SPIE 6125,612502 (2006).
[Crossref]

S. Jongthanmmanurak, J. F. Liu, K. Wada, D. D. Cannon, D. T. Danielson, D. Pan, L. C. Kimeriling, and J. Michel, “Large electro-optic effect in tensile strained Ge-on-Si films,” Appl. Phys. Lett. 89,161115 (2006).
[Crossref]

J. F. Liu, D. Ahn, C. Y. Hong, S. Jongthanmmanurak, D. Pan, M. Beals, L. C. Kimerling, J. Michel, A. T. Pomerene, C. Hill, M. Jaso, K. Y. Tu, Y. K. Chen, S. Patel, M. Rasras, A. White, and D. M. Gill, “Waveguide-integrated Ge p-i-n photodetectors on Si,” 3rd IEEE International Conference on Group IV Photonics (IEEE Cat. No. 06EX1276C), Ottawa, ON, Canada, 13-15 Sept. 2006, pp.173–175.

Panepucci, R. R.

Paniccia, M.

A. Liu, R. Jones, L. Liao, D. Samara-Rubio, D. Rubin, O. Cohen, R. Nicolaescu, and M. Paniccia, “A high-speed silicon optical modulator based on metal-oxide-semiconductor capacitor,” Nature 427,615–618 (2004).
[Crossref] [PubMed]

Patel, S.

J. F. Liu, D. Ahn, C. Y. Hong, S. Jongthanmmanurak, D. Pan, M. Beals, L. C. Kimerling, J. Michel, A. T. Pomerene, C. Hill, M. Jaso, K. Y. Tu, Y. K. Chen, S. Patel, M. Rasras, A. White, and D. M. Gill, “Waveguide-integrated Ge p-i-n photodetectors on Si,” 3rd IEEE International Conference on Group IV Photonics (IEEE Cat. No. 06EX1276C), Ottawa, ON, Canada, 13-15 Sept. 2006, pp.173–175.

Patel, S. S.

L. C. Kimerling, D. Aim, A. B. Apsel, M. Beals, D. Carothers, Y-K. Chen, T. Conway, D. M. Gill, M. Grove, C-Y Hong, M. Lipson, J. Liu, J. Michel, D. Pan, S. S. Patel, A. T. Pomerene, M. Rasras, D. K. Sparacin, K-Y. Tu, A. E. White, and C. W. Wong, “Electronic-photonic integrated circuits on the CMOS platform,” Proc. SPIE 6125,612502 (2006).
[Crossref]

Pollak, F. H.

H. Shen and F. H. Pollak, “Generalized Franz-Keldysh theory of electromodulation,” Phys. Rev. B 42,7097–7102 (1990).
[Crossref]

F. H. Pollak and M. Cardona, “Piezo-electroreflectance in Ge, GaAs and Si,” Phys. Rev. 172,816–837 (1968).
[Crossref]

Pomerene, A. T.

L. C. Kimerling, D. Aim, A. B. Apsel, M. Beals, D. Carothers, Y-K. Chen, T. Conway, D. M. Gill, M. Grove, C-Y Hong, M. Lipson, J. Liu, J. Michel, D. Pan, S. S. Patel, A. T. Pomerene, M. Rasras, D. K. Sparacin, K-Y. Tu, A. E. White, and C. W. Wong, “Electronic-photonic integrated circuits on the CMOS platform,” Proc. SPIE 6125,612502 (2006).
[Crossref]

J. F. Liu, D. Ahn, C. Y. Hong, S. Jongthanmmanurak, D. Pan, M. Beals, L. C. Kimerling, J. Michel, A. T. Pomerene, C. Hill, M. Jaso, K. Y. Tu, Y. K. Chen, S. Patel, M. Rasras, A. White, and D. M. Gill, “Waveguide-integrated Ge p-i-n photodetectors on Si,” 3rd IEEE International Conference on Group IV Photonics (IEEE Cat. No. 06EX1276C), Ottawa, ON, Canada, 13-15 Sept. 2006, pp.173–175.

Pradhan, S.

Q. Xu, B. Schmidt, S. Pradhan, and M. Lipson, “Micrometre-scale silicon electro-optic modulator,” Nature 435,325–327 (2005).
[Crossref] [PubMed]

Rasras, M.

L. C. Kimerling, D. Aim, A. B. Apsel, M. Beals, D. Carothers, Y-K. Chen, T. Conway, D. M. Gill, M. Grove, C-Y Hong, M. Lipson, J. Liu, J. Michel, D. Pan, S. S. Patel, A. T. Pomerene, M. Rasras, D. K. Sparacin, K-Y. Tu, A. E. White, and C. W. Wong, “Electronic-photonic integrated circuits on the CMOS platform,” Proc. SPIE 6125,612502 (2006).
[Crossref]

J. F. Liu, D. Ahn, C. Y. Hong, S. Jongthanmmanurak, D. Pan, M. Beals, L. C. Kimerling, J. Michel, A. T. Pomerene, C. Hill, M. Jaso, K. Y. Tu, Y. K. Chen, S. Patel, M. Rasras, A. White, and D. M. Gill, “Waveguide-integrated Ge p-i-n photodetectors on Si,” 3rd IEEE International Conference on Group IV Photonics (IEEE Cat. No. 06EX1276C), Ottawa, ON, Canada, 13-15 Sept. 2006, pp.173–175.

Ren, S.

Y.-H. Kuo, Y. K. Lee, Y. Ge, S. Ren, J. E. Roth, T. I. Kamins, D. A. B. Miller, and J. S. Harris, “Strong quantum-confined Stark effect in germanium quantum-well structures on silicon,” Nature 437,1334–1336 (2005).
[Crossref] [PubMed]

Rieh, J. S.

G. Freeman, M. Meghelli, Y. Kwark, S. Zier, A. Rylyakov, J. S. Soma, T. Tanji, O. M. Schreiber, K. Walder, J. S. Rieh, B. Jaganathan, A. Joseph, and S. Subbannas, “40-Gb/s circuits built from a 120-GHzfT SiGe technology,” IEEE. J. Solid-St. Circ. 37,1106–1114(2002).
[Crossref]

Roth, J. E.

Y.-H. Kuo, Y. K. Lee, Y. Ge, S. Ren, J. E. Roth, T. I. Kamins, D. A. B. Miller, and J. S. Harris, “Strong quantum-confined Stark effect in germanium quantum-well structures on silicon,” Nature 437,1334–1336 (2005).
[Crossref] [PubMed]

Rubin, D.

A. Liu, R. Jones, L. Liao, D. Samara-Rubio, D. Rubin, O. Cohen, R. Nicolaescu, and M. Paniccia, “A high-speed silicon optical modulator based on metal-oxide-semiconductor capacitor,” Nature 427,615–618 (2004).
[Crossref] [PubMed]

Rylyakov, A.

G. Freeman, M. Meghelli, Y. Kwark, S. Zier, A. Rylyakov, J. S. Soma, T. Tanji, O. M. Schreiber, K. Walder, J. S. Rieh, B. Jaganathan, A. Joseph, and S. Subbannas, “40-Gb/s circuits built from a 120-GHzfT SiGe technology,” IEEE. J. Solid-St. Circ. 37,1106–1114(2002).
[Crossref]

Samara-Rubio, D.

A. Liu, R. Jones, L. Liao, D. Samara-Rubio, D. Rubin, O. Cohen, R. Nicolaescu, and M. Paniccia, “A high-speed silicon optical modulator based on metal-oxide-semiconductor capacitor,” Nature 427,615–618 (2004).
[Crossref] [PubMed]

Schmidt, B.

Q. Xu, B. Schmidt, S. Pradhan, and M. Lipson, “Micrometre-scale silicon electro-optic modulator,” Nature 435,325–327 (2005).
[Crossref] [PubMed]

Schreiber, O. M.

G. Freeman, M. Meghelli, Y. Kwark, S. Zier, A. Rylyakov, J. S. Soma, T. Tanji, O. M. Schreiber, K. Walder, J. S. Rieh, B. Jaganathan, A. Joseph, and S. Subbannas, “40-Gb/s circuits built from a 120-GHzfT SiGe technology,” IEEE. J. Solid-St. Circ. 37,1106–1114(2002).
[Crossref]

Shen, H.

H. Shen and F. H. Pollak, “Generalized Franz-Keldysh theory of electromodulation,” Phys. Rev. B 42,7097–7102 (1990).
[Crossref]

Soma, J. S.

G. Freeman, M. Meghelli, Y. Kwark, S. Zier, A. Rylyakov, J. S. Soma, T. Tanji, O. M. Schreiber, K. Walder, J. S. Rieh, B. Jaganathan, A. Joseph, and S. Subbannas, “40-Gb/s circuits built from a 120-GHzfT SiGe technology,” IEEE. J. Solid-St. Circ. 37,1106–1114(2002).
[Crossref]

Soref, R. A.

R. A. Soref, “Silicon-based optoelectronics,” Proc. IEEE. 81,1687–1706 (1993).
[Crossref]

Sparacin, D. K.

L. C. Kimerling, D. Aim, A. B. Apsel, M. Beals, D. Carothers, Y-K. Chen, T. Conway, D. M. Gill, M. Grove, C-Y Hong, M. Lipson, J. Liu, J. Michel, D. Pan, S. S. Patel, A. T. Pomerene, M. Rasras, D. K. Sparacin, K-Y. Tu, A. E. White, and C. W. Wong, “Electronic-photonic integrated circuits on the CMOS platform,” Proc. SPIE 6125,612502 (2006).
[Crossref]

D. K. Sparacin, Process and Design Techniques for Low Loss Integrated Silicon Photonics, Ph.D. thesis, (Massachusetts Institute of Technology, 2006), Chap. 7.

Subbannas, S.

G. Freeman, M. Meghelli, Y. Kwark, S. Zier, A. Rylyakov, J. S. Soma, T. Tanji, O. M. Schreiber, K. Walder, J. S. Rieh, B. Jaganathan, A. Joseph, and S. Subbannas, “40-Gb/s circuits built from a 120-GHzfT SiGe technology,” IEEE. J. Solid-St. Circ. 37,1106–1114(2002).
[Crossref]

Sze, S. M.

S. M. Sze, Physics of Semiconductor Devices (Wiley, New York, 1981), Chap. 13.

Tanji, T.

G. Freeman, M. Meghelli, Y. Kwark, S. Zier, A. Rylyakov, J. S. Soma, T. Tanji, O. M. Schreiber, K. Walder, J. S. Rieh, B. Jaganathan, A. Joseph, and S. Subbannas, “40-Gb/s circuits built from a 120-GHzfT SiGe technology,” IEEE. J. Solid-St. Circ. 37,1106–1114(2002).
[Crossref]

Tu, K. Y.

J. F. Liu, D. Ahn, C. Y. Hong, S. Jongthanmmanurak, D. Pan, M. Beals, L. C. Kimerling, J. Michel, A. T. Pomerene, C. Hill, M. Jaso, K. Y. Tu, Y. K. Chen, S. Patel, M. Rasras, A. White, and D. M. Gill, “Waveguide-integrated Ge p-i-n photodetectors on Si,” 3rd IEEE International Conference on Group IV Photonics (IEEE Cat. No. 06EX1276C), Ottawa, ON, Canada, 13-15 Sept. 2006, pp.173–175.

Tu, K-Y.

L. C. Kimerling, D. Aim, A. B. Apsel, M. Beals, D. Carothers, Y-K. Chen, T. Conway, D. M. Gill, M. Grove, C-Y Hong, M. Lipson, J. Liu, J. Michel, D. Pan, S. S. Patel, A. T. Pomerene, M. Rasras, D. K. Sparacin, K-Y. Tu, A. E. White, and C. W. Wong, “Electronic-photonic integrated circuits on the CMOS platform,” Proc. SPIE 6125,612502 (2006).
[Crossref]

Wada, K.

S. Jongthanmmanurak, J. F. Liu, K. Wada, D. D. Cannon, D. T. Danielson, D. Pan, L. C. Kimeriling, and J. Michel, “Large electro-optic effect in tensile strained Ge-on-Si films,” Appl. Phys. Lett. 89,161115 (2006).
[Crossref]

J. F. Liu, D. D. Cannon, K. Wada, Y. Ishikawa, D. T. Danielson, S. Jongthammanurak, J. Michel, and L C. Kimerling, “Deformation potential constants of biaxially tensile stressed Ge epitaxial films on Si (100),” Phys. Rev B 70,155309 (2004).
[Crossref]

Y. Ishikawa, K. Wada, D. D. Cannon, J. F. Liu, H. C. Luan, and L. C. Kimerling, “Strain-induced direct band gap shrinkage in Ge grown on Si substrate,” Appl. Phys. Lett. 82,2044–2046 (2003).
[Crossref]

Walder, K.

G. Freeman, M. Meghelli, Y. Kwark, S. Zier, A. Rylyakov, J. S. Soma, T. Tanji, O. M. Schreiber, K. Walder, J. S. Rieh, B. Jaganathan, A. Joseph, and S. Subbannas, “40-Gb/s circuits built from a 120-GHzfT SiGe technology,” IEEE. J. Solid-St. Circ. 37,1106–1114(2002).
[Crossref]

White, A.

J. F. Liu, D. Ahn, C. Y. Hong, S. Jongthanmmanurak, D. Pan, M. Beals, L. C. Kimerling, J. Michel, A. T. Pomerene, C. Hill, M. Jaso, K. Y. Tu, Y. K. Chen, S. Patel, M. Rasras, A. White, and D. M. Gill, “Waveguide-integrated Ge p-i-n photodetectors on Si,” 3rd IEEE International Conference on Group IV Photonics (IEEE Cat. No. 06EX1276C), Ottawa, ON, Canada, 13-15 Sept. 2006, pp.173–175.

White, A. E.

L. C. Kimerling, D. Aim, A. B. Apsel, M. Beals, D. Carothers, Y-K. Chen, T. Conway, D. M. Gill, M. Grove, C-Y Hong, M. Lipson, J. Liu, J. Michel, D. Pan, S. S. Patel, A. T. Pomerene, M. Rasras, D. K. Sparacin, K-Y. Tu, A. E. White, and C. W. Wong, “Electronic-photonic integrated circuits on the CMOS platform,” Proc. SPIE 6125,612502 (2006).
[Crossref]

Wong, C. W.

L. C. Kimerling, D. Aim, A. B. Apsel, M. Beals, D. Carothers, Y-K. Chen, T. Conway, D. M. Gill, M. Grove, C-Y Hong, M. Lipson, J. Liu, J. Michel, D. Pan, S. S. Patel, A. T. Pomerene, M. Rasras, D. K. Sparacin, K-Y. Tu, A. E. White, and C. W. Wong, “Electronic-photonic integrated circuits on the CMOS platform,” Proc. SPIE 6125,612502 (2006).
[Crossref]

Xu, Q.

Q. Xu, B. Schmidt, S. Pradhan, and M. Lipson, “Micrometre-scale silicon electro-optic modulator,” Nature 435,325–327 (2005).
[Crossref] [PubMed]

Yurkov, S. N.

A. S. Kyuregyan and S. N. Yurkov, “Room-temperature avalanche breakdown voltages of Si, Ge, SiC, GaAs, GaP and InP,” Sov. Phys. Semicond 23,1126–1132 (1989).

Zier, S.

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Figures (4)

Fig. 1.
Fig. 1.

(a) The absorption constrast (Δα/α) at 1550nm as a function of Si composition, and (b) the absorption coefficient of Ge0.9925Si0.0075 vs. electric field at 1550 nm.

Fig. 2.
Fig. 2.

Schematic structure of a Ge0.9925Si0.0075 EA modulator and a photodetector monolithically integrated on an SOI platform. The p+ Si layers are formed in the single crystal SOI device layer.

Fig. 3.
Fig. 3.

(a) Extinction ratio over insertion loss of 50 μm-long Ge0.9925Si0.0075 EA modulators with different cross-sectional dimensions, and (b) modulator performance vs. device length for Ge0.9925Si0.0075 EA modulators with H=400 nm and W=600nm.

Fig. 4.
Fig. 4.

The responsivity and bandwidth of Ge0.9925Si0.0075 photodetectors (W=600 nm, H=400 nm) as a function of device length.

Equations (4)

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E p = 3 ( m 0 m e + 1 ) ( 1 E g Γ ( lh ) + 1 E g Γ ( hh ) + 1 E g Γ ( so ) ) .
Insertion Loss = 101 g 10 ( t ( 0 ) Ω ( 0 ) 2 ) ,
Extinction Ratio = 101 g 10 ( t ( V ) Ω ( V ) 2 ) + 101 g 10 ( t ( 0 ) Ω ( 0 ) 2 ) 101 g 10 ( t ( V ) t ( 0 ) ) ,
R ( A W ) = ( λ ( nm ) 1240 ) ( 1 r ) Ω ( V ) [ 1 exp ( α eff ( V ) L ) ] ,

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