Abstract

A ridge-waveguide InGaAs/GaAsP laser, emitting up to 250 mW in a single lateral and longitudinal mode at a wavelength of 894 nm, is presented. The distributed feedback is provided by a second order grating, formed into an InGaP/GaAs/InGaP multilayer structure. Owing to the stable lasing frequency, the large side mode suppression ratio (>40 dB) and small spectral line width (<200 kHz) the diode laser is well suited for caesium D1 spectroscopy. This was verified by the measurement of the hyperfine structure of the D1 line.

© 2007 Optical Society of America

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References

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  1. S. B. Ross, S. I. Kanorsky, A. Weis, T. H. Hänsch, "A single mode, cw, diode laser at the Caesium D1 (894.59 nm) transition," Opt. Commun. 120, 155 - 157 (1995)
    [CrossRef]
  2. A. Andalkar, S. K. Lamoreaux and R. B. Warrington, "Improved external cavity design for caesium D1 (894 nm) diode laser," Review of Science Instruments 71, 4029-4061 (2000)
    [CrossRef]
  3. A. Andalkar and R. B. Warrington, "High-resolution measurement of the pressure broadening and shift of the Cs D1 and D2 lines by N2 and He buffer gases," Phys. Rev. A 65032708, (2002)
    [CrossRef]
  4. A. Klehr, H. Wenzel, 0. Brox, F. Bugge, J. Fricke, A. Ginolas, P. Ressel, G. Erbert, "Five-hundred-milliwatts distributed-feedback diode laser emitting at 940 nm," Opt. Laser Technol. 39333-337 (2007)
    [CrossRef]
  5. http://www.nanoplus.com
  6. T-P. Nguyen, A. Klehr, O. Brox, G. Erbert and G. Tränkle, "High power 780 nm DFB laser with 500 kHz line width," Advances in Optics, Photonics, Spectroscopy and Applications, 267-272, Aug. 2006, Cantho, Vietnam
  7. H. Wenzel, A. Klehr, M. Braun, F. Bugge, G. Erbert, J. Fricke, A. Knauer, P. Ressel, B. Sumpf, M. Weyers and G. Tränkle "Design and realization of high power DFB lasers," Proc. SPIE 5595, 110-123, (2004)
    [CrossRef]
  8. T. Udem, T. Reichert, R. Holzwarth. AndT. W. Hänsch, "Absolute Optical Frequency Measurement of the Caesium D1 Line with a Mode-locked Laser," Phys. Rev. Lett. 82,3568-3571 (1999)
    [CrossRef]

2007

A. Klehr, H. Wenzel, 0. Brox, F. Bugge, J. Fricke, A. Ginolas, P. Ressel, G. Erbert, "Five-hundred-milliwatts distributed-feedback diode laser emitting at 940 nm," Opt. Laser Technol. 39333-337 (2007)
[CrossRef]

2004

H. Wenzel, A. Klehr, M. Braun, F. Bugge, G. Erbert, J. Fricke, A. Knauer, P. Ressel, B. Sumpf, M. Weyers and G. Tränkle "Design and realization of high power DFB lasers," Proc. SPIE 5595, 110-123, (2004)
[CrossRef]

2002

A. Andalkar and R. B. Warrington, "High-resolution measurement of the pressure broadening and shift of the Cs D1 and D2 lines by N2 and He buffer gases," Phys. Rev. A 65032708, (2002)
[CrossRef]

2000

A. Andalkar, S. K. Lamoreaux and R. B. Warrington, "Improved external cavity design for caesium D1 (894 nm) diode laser," Review of Science Instruments 71, 4029-4061 (2000)
[CrossRef]

1999

T. Udem, T. Reichert, R. Holzwarth. AndT. W. Hänsch, "Absolute Optical Frequency Measurement of the Caesium D1 Line with a Mode-locked Laser," Phys. Rev. Lett. 82,3568-3571 (1999)
[CrossRef]

1995

S. B. Ross, S. I. Kanorsky, A. Weis, T. H. Hänsch, "A single mode, cw, diode laser at the Caesium D1 (894.59 nm) transition," Opt. Commun. 120, 155 - 157 (1995)
[CrossRef]

Opt. Commun.

S. B. Ross, S. I. Kanorsky, A. Weis, T. H. Hänsch, "A single mode, cw, diode laser at the Caesium D1 (894.59 nm) transition," Opt. Commun. 120, 155 - 157 (1995)
[CrossRef]

Opt. Laser Technol.

A. Klehr, H. Wenzel, 0. Brox, F. Bugge, J. Fricke, A. Ginolas, P. Ressel, G. Erbert, "Five-hundred-milliwatts distributed-feedback diode laser emitting at 940 nm," Opt. Laser Technol. 39333-337 (2007)
[CrossRef]

Phys. Rev. A

A. Andalkar and R. B. Warrington, "High-resolution measurement of the pressure broadening and shift of the Cs D1 and D2 lines by N2 and He buffer gases," Phys. Rev. A 65032708, (2002)
[CrossRef]

Phys. Rev. Lett.

T. Udem, T. Reichert, R. Holzwarth. AndT. W. Hänsch, "Absolute Optical Frequency Measurement of the Caesium D1 Line with a Mode-locked Laser," Phys. Rev. Lett. 82,3568-3571 (1999)
[CrossRef]

Proc. SPIE

H. Wenzel, A. Klehr, M. Braun, F. Bugge, G. Erbert, J. Fricke, A. Knauer, P. Ressel, B. Sumpf, M. Weyers and G. Tränkle "Design and realization of high power DFB lasers," Proc. SPIE 5595, 110-123, (2004)
[CrossRef]

Review of Science Instruments

A. Andalkar, S. K. Lamoreaux and R. B. Warrington, "Improved external cavity design for caesium D1 (894 nm) diode laser," Review of Science Instruments 71, 4029-4061 (2000)
[CrossRef]

Other

http://www.nanoplus.com

T-P. Nguyen, A. Klehr, O. Brox, G. Erbert and G. Tränkle, "High power 780 nm DFB laser with 500 kHz line width," Advances in Optics, Photonics, Spectroscopy and Applications, 267-272, Aug. 2006, Cantho, Vietnam

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Figures (5)

Fig. 1.
Fig. 1.

cw light-current characteristic of a 894 nm DFB laser at 25 °C heat sink temperature. Inset: Normalised vertical and lateral far field profiles at 150 mW

Fig. 2.
Fig. 2.

Mapping of the optical spectrum of the developed DFB laser with a current step distance of 1 mA and a resolution of 10 pm

Fig. 3.
Fig. 3.

longitudinal mode spectrum at 100 mA

Fig. 4.
Fig. 4.

Beat spectrum of two identical DFB lasers measured at 100 mA (~60 mW) recorded with a high frequency spectrum analyzer with 20kHz resolution bandwidth (RBW), a sweep time (SWT) of 12.8 ms and a video band width (VBW) of 3 kHz. The full width half maximum is 360 kHz.

Fig. 4.
Fig. 4.

Power-current characteristic at 25.5 °C in the current range 50–90 mA measured through a 80 mm long Caesium cell. Between 60 mA to 80 mA four absorption peaks can be seen corresponding to the hyperfine structure of the caesium D1 line.

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