Abstract

We report high-performance single-frequency operation of a directly diode-pumped GaSb-based vertical-external-cavity surface-emitting laser (VECSEL) at 2.3μm. Tunability of 70nm and a maximum single frequency output of 0.68W is demonstrated.

© 2007 Optical Society of America

Full Article  |  PDF Article

References

  • View by:
  • |
  • |

  1. M. Kuznetsov,  et al., "High-power (>0.5-W CW) diode-pumped vertical-external-cavity surface-emitting semiconductor lasers with circular TEM00 beams," IEEE Photon. Technol. Lett. 9, 1063-1065 (1997).
    [CrossRef]
  2. J. Chilla,  et al., "High power optically pumped semiconductor lasers," in Solid State Lasers Xiii: Technology and Devices, R. Scheps and H. J. Hoffman, eds., 143-150 (2004).
  3. S. Lutgen,  et al., "8-W high-efficiency continuous-wave semiconductor disk laser at 1000 nm," Appl. Phys. Lett. 82, 3620-3622 (2003).
    [CrossRef]
  4. J. M. Hopkins,  et al., "0.6 W CW GaInNAs vertical external-cavity surface emitting laser operating at 1.32μm," Electron. Lett. 40, 30-31 (2004). http://scitation.aip.org/dbt/dbt.jsp?KEY=ELLEAK&Volume=40&Issue=1
    [CrossRef]
  5. H. Lindberg,  et al., "0.8W optically pumped vertical external cavity surface emitting laser operating CW at 1550 nm," Electron. Lett. 40, 601-602 (2004).
    [CrossRef]
  6. J. E. Hastie,  et al., "High power CW red VECSEL with linearly polarized TEM00 output beam," Opt. Express 13, 77-81 (2005).
    [CrossRef] [PubMed]
  7. N. Schulz,  et al., "Optically pumped GaSb-based VECSEL emitting 0.6 W at 2.3μm," IEEE Photon. Technol. Lett. 18, 1070-1072 (2006).
    [CrossRef]
  8. L. Cerutti,  et al., "High temperature continuous wave operation of Sb-based vertical external cavity surface emitting laser near 2.3μm," J. of Cryst. Growth 268, 128-134 (2004).
    [CrossRef]
  9. A. Ouvrard,  et al., "Single-frequency tunable Sb-based VCSELs emitting at 2.3μm," IEEE Photon. Technol. Lett. 17, 2020-2022 (2005).
    [CrossRef]
  10. J.-M. Hopkins,  et al., "Tunable, single-frequency, Diode-pumped 2.3μm VECSEL," Conference on Lasers and Electro-Optics, Technical Digest (CD) (Optical Society of America, 2006), paper CThM3. http://www.opticsinfobase.org/abstract.cfm?id=100120
  11. A. Harkonen,  et al., "1-W antimonide-based vertical external cavity surface emitting laser operating at 2-μm," Opt. Express 14, 6479-6484 (2006).
    [CrossRef] [PubMed]
  12. S. W. Corzine,  et al., "Design of Fabry-Perot Surface-Emitting Lasers with a Periodic Gain Structure," IEEE J. Quantum Electron. 25, 1513-1524 (1989).
    [CrossRef]
  13. A. J. Kemp,  et al., "Thermal management in vertical-external-cavity surface-emitting lasers: Finite-element analysis of a heatspreader approach," IEEE J. of Quantum Electron. 41, 148-155 (2005).
    [CrossRef]
  14. F. van Loon et al., "Intracavity diamond heatspreaders in lasers: the effects of birefringence," Opt. Express 14, 9250-9260 (2006.
    [CrossRef] [PubMed]

2006 (3)

2005 (3)

A. J. Kemp,  et al., "Thermal management in vertical-external-cavity surface-emitting lasers: Finite-element analysis of a heatspreader approach," IEEE J. of Quantum Electron. 41, 148-155 (2005).
[CrossRef]

J. E. Hastie,  et al., "High power CW red VECSEL with linearly polarized TEM00 output beam," Opt. Express 13, 77-81 (2005).
[CrossRef] [PubMed]

A. Ouvrard,  et al., "Single-frequency tunable Sb-based VCSELs emitting at 2.3μm," IEEE Photon. Technol. Lett. 17, 2020-2022 (2005).
[CrossRef]

2004 (3)

L. Cerutti,  et al., "High temperature continuous wave operation of Sb-based vertical external cavity surface emitting laser near 2.3μm," J. of Cryst. Growth 268, 128-134 (2004).
[CrossRef]

J. M. Hopkins,  et al., "0.6 W CW GaInNAs vertical external-cavity surface emitting laser operating at 1.32μm," Electron. Lett. 40, 30-31 (2004). http://scitation.aip.org/dbt/dbt.jsp?KEY=ELLEAK&Volume=40&Issue=1
[CrossRef]

H. Lindberg,  et al., "0.8W optically pumped vertical external cavity surface emitting laser operating CW at 1550 nm," Electron. Lett. 40, 601-602 (2004).
[CrossRef]

2003 (1)

S. Lutgen,  et al., "8-W high-efficiency continuous-wave semiconductor disk laser at 1000 nm," Appl. Phys. Lett. 82, 3620-3622 (2003).
[CrossRef]

1997 (1)

M. Kuznetsov,  et al., "High-power (>0.5-W CW) diode-pumped vertical-external-cavity surface-emitting semiconductor lasers with circular TEM00 beams," IEEE Photon. Technol. Lett. 9, 1063-1065 (1997).
[CrossRef]

1989 (1)

S. W. Corzine,  et al., "Design of Fabry-Perot Surface-Emitting Lasers with a Periodic Gain Structure," IEEE J. Quantum Electron. 25, 1513-1524 (1989).
[CrossRef]

Appl. Phys. Lett. (1)

S. Lutgen,  et al., "8-W high-efficiency continuous-wave semiconductor disk laser at 1000 nm," Appl. Phys. Lett. 82, 3620-3622 (2003).
[CrossRef]

Electron. Lett. (2)

J. M. Hopkins,  et al., "0.6 W CW GaInNAs vertical external-cavity surface emitting laser operating at 1.32μm," Electron. Lett. 40, 30-31 (2004). http://scitation.aip.org/dbt/dbt.jsp?KEY=ELLEAK&Volume=40&Issue=1
[CrossRef]

H. Lindberg,  et al., "0.8W optically pumped vertical external cavity surface emitting laser operating CW at 1550 nm," Electron. Lett. 40, 601-602 (2004).
[CrossRef]

IEEE J. of Quantum Electron. (1)

A. J. Kemp,  et al., "Thermal management in vertical-external-cavity surface-emitting lasers: Finite-element analysis of a heatspreader approach," IEEE J. of Quantum Electron. 41, 148-155 (2005).
[CrossRef]

IEEE J. Quantum Electron. (1)

S. W. Corzine,  et al., "Design of Fabry-Perot Surface-Emitting Lasers with a Periodic Gain Structure," IEEE J. Quantum Electron. 25, 1513-1524 (1989).
[CrossRef]

IEEE Photon. Technol. Lett. (3)

A. Ouvrard,  et al., "Single-frequency tunable Sb-based VCSELs emitting at 2.3μm," IEEE Photon. Technol. Lett. 17, 2020-2022 (2005).
[CrossRef]

M. Kuznetsov,  et al., "High-power (>0.5-W CW) diode-pumped vertical-external-cavity surface-emitting semiconductor lasers with circular TEM00 beams," IEEE Photon. Technol. Lett. 9, 1063-1065 (1997).
[CrossRef]

N. Schulz,  et al., "Optically pumped GaSb-based VECSEL emitting 0.6 W at 2.3μm," IEEE Photon. Technol. Lett. 18, 1070-1072 (2006).
[CrossRef]

J. of Cryst. Growth (1)

L. Cerutti,  et al., "High temperature continuous wave operation of Sb-based vertical external cavity surface emitting laser near 2.3μm," J. of Cryst. Growth 268, 128-134 (2004).
[CrossRef]

Opt. Express (3)

Other (2)

J.-M. Hopkins,  et al., "Tunable, single-frequency, Diode-pumped 2.3μm VECSEL," Conference on Lasers and Electro-Optics, Technical Digest (CD) (Optical Society of America, 2006), paper CThM3. http://www.opticsinfobase.org/abstract.cfm?id=100120

J. Chilla,  et al., "High power optically pumped semiconductor lasers," in Solid State Lasers Xiii: Technology and Devices, R. Scheps and H. J. Hoffman, eds., 143-150 (2004).

Cited By

OSA participates in CrossRef's Cited-By Linking service. Citing articles from OSA journals and other participating publishers are listed here.

Alert me when this article is cited.


Figures (8)

Fig. 1.
Fig. 1.

Schematic of the device structure showing the key constituent elements.

Fig. 2.
Fig. 2.

Measured room-temperature static characteristics of the VECSEL structure showing the reflectivity (red), the backscattered PL (blue) and the edge PL (black)..

Fig. 3.
Fig. 3.

Schematic of the typical 2-mirror VECSEL configuration. (HS: heatspreader)

Fig. 4.
Fig. 4.

CW power transfer characteristic of the Mid-IR VECSEL cooled to -15°C.

Fig. 5.
Fig. 5.

Typical transition behavior between free-running (a) multi-mode and (b) SLM operation (see inset spectra) with careful cavity alignment.

Fig. 6.
Fig. 6.

Trace from a scanning Fabry-Perot etalon with a free spectral range (FSR) of approximately 12GHz showing the piezoelectric drive voltage (B) and the relative position of the adjacent longitudinal cavity mode (C).

Fig. 7.
Fig. 7.

Typical tuning characteristic obtained at moderate output powers. Each point was optimized for stable SLM operation.

Fig. 8.
Fig. 8.

Schematic of the cavity arrangement and electronics used for the locking and line narrowing of the single frequency VECSEL operation.

Metrics