Abstract

Experimental results for refractive index variation induced by depletion in a silicon structure integrated in a PIN diode are reported. Thermal effect has been dissociated from the electrical contribution due to carrier density variation induced by a reverse bias voltage. A figure of merit VπLπ of 3.1 V.cm has been obtained at 1.55μm. Numerical simulations show a good agreement between experimental and theoretical index variations.

© 2006 Optical Society of America

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References

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  1. G.T. Reed and C.E. Jason Png, “Silicon optical modulators,” Materials Todays40–50, (2005).
    [Crossref]
  2. R.S. Jacobsen, K.N. Andersen, P.I. Borel, J. Page-Pedersen, L.H. Frandsen, O. Hansen, M. Kristensen, A.V. Lavrinenko, G. Moulin, H. Ou, C. Peucheret, B. Zsidri, and A. Bjarklev, “Strained silicon as a new electro-optical material,” Nature 441, 199–202 (2006).
    [Crossref] [PubMed]
  3. P. Yu, J. Wu, and B. Zhu “Enhanced quantum-confined Pockels effect in SiGe superlattices,” Phys. Rev. B 73,235328 (2006).
    [Crossref]
  4. Y. Kuo, Y. Lee, Y. Ge, S. Ren, J. Roth, T. Kamins, D. Miller, and J. Harris “Strong quantum-confined Stark effect in germanium quantum well structures on silicon,” Nature 437, 1334–1336 (2005).
    [Crossref] [PubMed]
  5. Q. Xu, B. Schmidt, S. Pradhan, and M. Lipson, “Micrometer-scale silicon electro-optic modulator,” Nature 435, 325–327 (2005).
    [Crossref] [PubMed]
  6. L. Liao, D. Samara-Rubio, M. Morse, A. Liu, D. Hodge, D. Rubin, U.D. Keil, and T. Franck, “High speed silicon Mach Zehnder modulator,” Opt. Express 13, 3129–3135 (2005).
    [Crossref] [PubMed]
  7. A. Lupu, D. Marris, D. Pascal, J.-L. Cercus, A. Cordat, V. L. Thanh, and S. Laval, “Experimental evidence for index modulation by carrier depletion in SiGe/Si multiple quantum well structures,” App. Phys. Lett. 85, 887–889, (2004).
    [Crossref]
  8. D. Marris, E. Cassan, and L. Vivien, “Time response analysis of SiGe/Si modulation-doped multiple quantum well structures for optical modulation,” J. Appl. Phys. 96, 6109–6112, (2004).
    [Crossref]
  9. D. Marris-Morini, X. Le Roux, D. Pascal, L. Vivien, E. Cassan, J.M. Fédéli, J.F. Damlencourt, D. Bouville, J. Palomo, and S. Laval, “High speed all-silicon modulation-doped optical modulator,” presented at the EMRS-spring meeting, Nice, 29 mai-2 june 2006.
  10. S. Maine, D. Marris-Morini, L. Vivien, D. Pascal, E. Cassan, and S. Laval, “Design optimisation of SiGe/Si:modulation-doped multiple quantum well modulator for high speed operation,” in Proc SPIE 6183 (2006), 618360D1-6.
    [Crossref]
  11. ISE software, http://www.ise.com/.
  12. R. Soref and B. Bennett, “Electrooptical effects in silicon,” IEEE J. Quantum Electron. QE-23123–129 (1987).
    [Crossref]
  13. PhotonDesign software, http://www.photond.com.

2006 (3)

R.S. Jacobsen, K.N. Andersen, P.I. Borel, J. Page-Pedersen, L.H. Frandsen, O. Hansen, M. Kristensen, A.V. Lavrinenko, G. Moulin, H. Ou, C. Peucheret, B. Zsidri, and A. Bjarklev, “Strained silicon as a new electro-optical material,” Nature 441, 199–202 (2006).
[Crossref] [PubMed]

P. Yu, J. Wu, and B. Zhu “Enhanced quantum-confined Pockels effect in SiGe superlattices,” Phys. Rev. B 73,235328 (2006).
[Crossref]

S. Maine, D. Marris-Morini, L. Vivien, D. Pascal, E. Cassan, and S. Laval, “Design optimisation of SiGe/Si:modulation-doped multiple quantum well modulator for high speed operation,” in Proc SPIE 6183 (2006), 618360D1-6.
[Crossref]

2005 (4)

G.T. Reed and C.E. Jason Png, “Silicon optical modulators,” Materials Todays40–50, (2005).
[Crossref]

Y. Kuo, Y. Lee, Y. Ge, S. Ren, J. Roth, T. Kamins, D. Miller, and J. Harris “Strong quantum-confined Stark effect in germanium quantum well structures on silicon,” Nature 437, 1334–1336 (2005).
[Crossref] [PubMed]

Q. Xu, B. Schmidt, S. Pradhan, and M. Lipson, “Micrometer-scale silicon electro-optic modulator,” Nature 435, 325–327 (2005).
[Crossref] [PubMed]

L. Liao, D. Samara-Rubio, M. Morse, A. Liu, D. Hodge, D. Rubin, U.D. Keil, and T. Franck, “High speed silicon Mach Zehnder modulator,” Opt. Express 13, 3129–3135 (2005).
[Crossref] [PubMed]

2004 (2)

A. Lupu, D. Marris, D. Pascal, J.-L. Cercus, A. Cordat, V. L. Thanh, and S. Laval, “Experimental evidence for index modulation by carrier depletion in SiGe/Si multiple quantum well structures,” App. Phys. Lett. 85, 887–889, (2004).
[Crossref]

D. Marris, E. Cassan, and L. Vivien, “Time response analysis of SiGe/Si modulation-doped multiple quantum well structures for optical modulation,” J. Appl. Phys. 96, 6109–6112, (2004).
[Crossref]

1987 (1)

R. Soref and B. Bennett, “Electrooptical effects in silicon,” IEEE J. Quantum Electron. QE-23123–129 (1987).
[Crossref]

Andersen, K.N.

R.S. Jacobsen, K.N. Andersen, P.I. Borel, J. Page-Pedersen, L.H. Frandsen, O. Hansen, M. Kristensen, A.V. Lavrinenko, G. Moulin, H. Ou, C. Peucheret, B. Zsidri, and A. Bjarklev, “Strained silicon as a new electro-optical material,” Nature 441, 199–202 (2006).
[Crossref] [PubMed]

Bennett, B.

R. Soref and B. Bennett, “Electrooptical effects in silicon,” IEEE J. Quantum Electron. QE-23123–129 (1987).
[Crossref]

Bjarklev, A.

R.S. Jacobsen, K.N. Andersen, P.I. Borel, J. Page-Pedersen, L.H. Frandsen, O. Hansen, M. Kristensen, A.V. Lavrinenko, G. Moulin, H. Ou, C. Peucheret, B. Zsidri, and A. Bjarklev, “Strained silicon as a new electro-optical material,” Nature 441, 199–202 (2006).
[Crossref] [PubMed]

Borel, P.I.

R.S. Jacobsen, K.N. Andersen, P.I. Borel, J. Page-Pedersen, L.H. Frandsen, O. Hansen, M. Kristensen, A.V. Lavrinenko, G. Moulin, H. Ou, C. Peucheret, B. Zsidri, and A. Bjarklev, “Strained silicon as a new electro-optical material,” Nature 441, 199–202 (2006).
[Crossref] [PubMed]

Bouville, D.

D. Marris-Morini, X. Le Roux, D. Pascal, L. Vivien, E. Cassan, J.M. Fédéli, J.F. Damlencourt, D. Bouville, J. Palomo, and S. Laval, “High speed all-silicon modulation-doped optical modulator,” presented at the EMRS-spring meeting, Nice, 29 mai-2 june 2006.

Cassan, E.

S. Maine, D. Marris-Morini, L. Vivien, D. Pascal, E. Cassan, and S. Laval, “Design optimisation of SiGe/Si:modulation-doped multiple quantum well modulator for high speed operation,” in Proc SPIE 6183 (2006), 618360D1-6.
[Crossref]

D. Marris, E. Cassan, and L. Vivien, “Time response analysis of SiGe/Si modulation-doped multiple quantum well structures for optical modulation,” J. Appl. Phys. 96, 6109–6112, (2004).
[Crossref]

D. Marris-Morini, X. Le Roux, D. Pascal, L. Vivien, E. Cassan, J.M. Fédéli, J.F. Damlencourt, D. Bouville, J. Palomo, and S. Laval, “High speed all-silicon modulation-doped optical modulator,” presented at the EMRS-spring meeting, Nice, 29 mai-2 june 2006.

Cercus, J.-L.

A. Lupu, D. Marris, D. Pascal, J.-L. Cercus, A. Cordat, V. L. Thanh, and S. Laval, “Experimental evidence for index modulation by carrier depletion in SiGe/Si multiple quantum well structures,” App. Phys. Lett. 85, 887–889, (2004).
[Crossref]

Cordat, A.

A. Lupu, D. Marris, D. Pascal, J.-L. Cercus, A. Cordat, V. L. Thanh, and S. Laval, “Experimental evidence for index modulation by carrier depletion in SiGe/Si multiple quantum well structures,” App. Phys. Lett. 85, 887–889, (2004).
[Crossref]

Damlencourt, J.F.

D. Marris-Morini, X. Le Roux, D. Pascal, L. Vivien, E. Cassan, J.M. Fédéli, J.F. Damlencourt, D. Bouville, J. Palomo, and S. Laval, “High speed all-silicon modulation-doped optical modulator,” presented at the EMRS-spring meeting, Nice, 29 mai-2 june 2006.

Fédéli, J.M.

D. Marris-Morini, X. Le Roux, D. Pascal, L. Vivien, E. Cassan, J.M. Fédéli, J.F. Damlencourt, D. Bouville, J. Palomo, and S. Laval, “High speed all-silicon modulation-doped optical modulator,” presented at the EMRS-spring meeting, Nice, 29 mai-2 june 2006.

Franck, T.

Frandsen, L.H.

R.S. Jacobsen, K.N. Andersen, P.I. Borel, J. Page-Pedersen, L.H. Frandsen, O. Hansen, M. Kristensen, A.V. Lavrinenko, G. Moulin, H. Ou, C. Peucheret, B. Zsidri, and A. Bjarklev, “Strained silicon as a new electro-optical material,” Nature 441, 199–202 (2006).
[Crossref] [PubMed]

Ge, Y.

Y. Kuo, Y. Lee, Y. Ge, S. Ren, J. Roth, T. Kamins, D. Miller, and J. Harris “Strong quantum-confined Stark effect in germanium quantum well structures on silicon,” Nature 437, 1334–1336 (2005).
[Crossref] [PubMed]

Hansen, O.

R.S. Jacobsen, K.N. Andersen, P.I. Borel, J. Page-Pedersen, L.H. Frandsen, O. Hansen, M. Kristensen, A.V. Lavrinenko, G. Moulin, H. Ou, C. Peucheret, B. Zsidri, and A. Bjarklev, “Strained silicon as a new electro-optical material,” Nature 441, 199–202 (2006).
[Crossref] [PubMed]

Harris, J.

Y. Kuo, Y. Lee, Y. Ge, S. Ren, J. Roth, T. Kamins, D. Miller, and J. Harris “Strong quantum-confined Stark effect in germanium quantum well structures on silicon,” Nature 437, 1334–1336 (2005).
[Crossref] [PubMed]

Hodge, D.

Jacobsen, R.S.

R.S. Jacobsen, K.N. Andersen, P.I. Borel, J. Page-Pedersen, L.H. Frandsen, O. Hansen, M. Kristensen, A.V. Lavrinenko, G. Moulin, H. Ou, C. Peucheret, B. Zsidri, and A. Bjarklev, “Strained silicon as a new electro-optical material,” Nature 441, 199–202 (2006).
[Crossref] [PubMed]

Jason Png, C.E.

G.T. Reed and C.E. Jason Png, “Silicon optical modulators,” Materials Todays40–50, (2005).
[Crossref]

Kamins, T.

Y. Kuo, Y. Lee, Y. Ge, S. Ren, J. Roth, T. Kamins, D. Miller, and J. Harris “Strong quantum-confined Stark effect in germanium quantum well structures on silicon,” Nature 437, 1334–1336 (2005).
[Crossref] [PubMed]

Keil, U.D.

Kristensen, M.

R.S. Jacobsen, K.N. Andersen, P.I. Borel, J. Page-Pedersen, L.H. Frandsen, O. Hansen, M. Kristensen, A.V. Lavrinenko, G. Moulin, H. Ou, C. Peucheret, B. Zsidri, and A. Bjarklev, “Strained silicon as a new electro-optical material,” Nature 441, 199–202 (2006).
[Crossref] [PubMed]

Kuo, Y.

Y. Kuo, Y. Lee, Y. Ge, S. Ren, J. Roth, T. Kamins, D. Miller, and J. Harris “Strong quantum-confined Stark effect in germanium quantum well structures on silicon,” Nature 437, 1334–1336 (2005).
[Crossref] [PubMed]

Laval, S.

S. Maine, D. Marris-Morini, L. Vivien, D. Pascal, E. Cassan, and S. Laval, “Design optimisation of SiGe/Si:modulation-doped multiple quantum well modulator for high speed operation,” in Proc SPIE 6183 (2006), 618360D1-6.
[Crossref]

A. Lupu, D. Marris, D. Pascal, J.-L. Cercus, A. Cordat, V. L. Thanh, and S. Laval, “Experimental evidence for index modulation by carrier depletion in SiGe/Si multiple quantum well structures,” App. Phys. Lett. 85, 887–889, (2004).
[Crossref]

D. Marris-Morini, X. Le Roux, D. Pascal, L. Vivien, E. Cassan, J.M. Fédéli, J.F. Damlencourt, D. Bouville, J. Palomo, and S. Laval, “High speed all-silicon modulation-doped optical modulator,” presented at the EMRS-spring meeting, Nice, 29 mai-2 june 2006.

Lavrinenko, A.V.

R.S. Jacobsen, K.N. Andersen, P.I. Borel, J. Page-Pedersen, L.H. Frandsen, O. Hansen, M. Kristensen, A.V. Lavrinenko, G. Moulin, H. Ou, C. Peucheret, B. Zsidri, and A. Bjarklev, “Strained silicon as a new electro-optical material,” Nature 441, 199–202 (2006).
[Crossref] [PubMed]

Le Roux, X.

D. Marris-Morini, X. Le Roux, D. Pascal, L. Vivien, E. Cassan, J.M. Fédéli, J.F. Damlencourt, D. Bouville, J. Palomo, and S. Laval, “High speed all-silicon modulation-doped optical modulator,” presented at the EMRS-spring meeting, Nice, 29 mai-2 june 2006.

Lee, Y.

Y. Kuo, Y. Lee, Y. Ge, S. Ren, J. Roth, T. Kamins, D. Miller, and J. Harris “Strong quantum-confined Stark effect in germanium quantum well structures on silicon,” Nature 437, 1334–1336 (2005).
[Crossref] [PubMed]

Liao, L.

Lipson, M.

Q. Xu, B. Schmidt, S. Pradhan, and M. Lipson, “Micrometer-scale silicon electro-optic modulator,” Nature 435, 325–327 (2005).
[Crossref] [PubMed]

Liu, A.

Lupu, A.

A. Lupu, D. Marris, D. Pascal, J.-L. Cercus, A. Cordat, V. L. Thanh, and S. Laval, “Experimental evidence for index modulation by carrier depletion in SiGe/Si multiple quantum well structures,” App. Phys. Lett. 85, 887–889, (2004).
[Crossref]

Maine, S.

S. Maine, D. Marris-Morini, L. Vivien, D. Pascal, E. Cassan, and S. Laval, “Design optimisation of SiGe/Si:modulation-doped multiple quantum well modulator for high speed operation,” in Proc SPIE 6183 (2006), 618360D1-6.
[Crossref]

Marris, D.

D. Marris, E. Cassan, and L. Vivien, “Time response analysis of SiGe/Si modulation-doped multiple quantum well structures for optical modulation,” J. Appl. Phys. 96, 6109–6112, (2004).
[Crossref]

A. Lupu, D. Marris, D. Pascal, J.-L. Cercus, A. Cordat, V. L. Thanh, and S. Laval, “Experimental evidence for index modulation by carrier depletion in SiGe/Si multiple quantum well structures,” App. Phys. Lett. 85, 887–889, (2004).
[Crossref]

Marris-Morini, D.

S. Maine, D. Marris-Morini, L. Vivien, D. Pascal, E. Cassan, and S. Laval, “Design optimisation of SiGe/Si:modulation-doped multiple quantum well modulator for high speed operation,” in Proc SPIE 6183 (2006), 618360D1-6.
[Crossref]

D. Marris-Morini, X. Le Roux, D. Pascal, L. Vivien, E. Cassan, J.M. Fédéli, J.F. Damlencourt, D. Bouville, J. Palomo, and S. Laval, “High speed all-silicon modulation-doped optical modulator,” presented at the EMRS-spring meeting, Nice, 29 mai-2 june 2006.

Miller, D.

Y. Kuo, Y. Lee, Y. Ge, S. Ren, J. Roth, T. Kamins, D. Miller, and J. Harris “Strong quantum-confined Stark effect in germanium quantum well structures on silicon,” Nature 437, 1334–1336 (2005).
[Crossref] [PubMed]

Morse, M.

Moulin, G.

R.S. Jacobsen, K.N. Andersen, P.I. Borel, J. Page-Pedersen, L.H. Frandsen, O. Hansen, M. Kristensen, A.V. Lavrinenko, G. Moulin, H. Ou, C. Peucheret, B. Zsidri, and A. Bjarklev, “Strained silicon as a new electro-optical material,” Nature 441, 199–202 (2006).
[Crossref] [PubMed]

Ou, H.

R.S. Jacobsen, K.N. Andersen, P.I. Borel, J. Page-Pedersen, L.H. Frandsen, O. Hansen, M. Kristensen, A.V. Lavrinenko, G. Moulin, H. Ou, C. Peucheret, B. Zsidri, and A. Bjarklev, “Strained silicon as a new electro-optical material,” Nature 441, 199–202 (2006).
[Crossref] [PubMed]

Page-Pedersen, J.

R.S. Jacobsen, K.N. Andersen, P.I. Borel, J. Page-Pedersen, L.H. Frandsen, O. Hansen, M. Kristensen, A.V. Lavrinenko, G. Moulin, H. Ou, C. Peucheret, B. Zsidri, and A. Bjarklev, “Strained silicon as a new electro-optical material,” Nature 441, 199–202 (2006).
[Crossref] [PubMed]

Palomo, J.

D. Marris-Morini, X. Le Roux, D. Pascal, L. Vivien, E. Cassan, J.M. Fédéli, J.F. Damlencourt, D. Bouville, J. Palomo, and S. Laval, “High speed all-silicon modulation-doped optical modulator,” presented at the EMRS-spring meeting, Nice, 29 mai-2 june 2006.

Pascal, D.

S. Maine, D. Marris-Morini, L. Vivien, D. Pascal, E. Cassan, and S. Laval, “Design optimisation of SiGe/Si:modulation-doped multiple quantum well modulator for high speed operation,” in Proc SPIE 6183 (2006), 618360D1-6.
[Crossref]

A. Lupu, D. Marris, D. Pascal, J.-L. Cercus, A. Cordat, V. L. Thanh, and S. Laval, “Experimental evidence for index modulation by carrier depletion in SiGe/Si multiple quantum well structures,” App. Phys. Lett. 85, 887–889, (2004).
[Crossref]

D. Marris-Morini, X. Le Roux, D. Pascal, L. Vivien, E. Cassan, J.M. Fédéli, J.F. Damlencourt, D. Bouville, J. Palomo, and S. Laval, “High speed all-silicon modulation-doped optical modulator,” presented at the EMRS-spring meeting, Nice, 29 mai-2 june 2006.

Peucheret, C.

R.S. Jacobsen, K.N. Andersen, P.I. Borel, J. Page-Pedersen, L.H. Frandsen, O. Hansen, M. Kristensen, A.V. Lavrinenko, G. Moulin, H. Ou, C. Peucheret, B. Zsidri, and A. Bjarklev, “Strained silicon as a new electro-optical material,” Nature 441, 199–202 (2006).
[Crossref] [PubMed]

Pradhan, S.

Q. Xu, B. Schmidt, S. Pradhan, and M. Lipson, “Micrometer-scale silicon electro-optic modulator,” Nature 435, 325–327 (2005).
[Crossref] [PubMed]

Reed, G.T.

G.T. Reed and C.E. Jason Png, “Silicon optical modulators,” Materials Todays40–50, (2005).
[Crossref]

Ren, S.

Y. Kuo, Y. Lee, Y. Ge, S. Ren, J. Roth, T. Kamins, D. Miller, and J. Harris “Strong quantum-confined Stark effect in germanium quantum well structures on silicon,” Nature 437, 1334–1336 (2005).
[Crossref] [PubMed]

Roth, J.

Y. Kuo, Y. Lee, Y. Ge, S. Ren, J. Roth, T. Kamins, D. Miller, and J. Harris “Strong quantum-confined Stark effect in germanium quantum well structures on silicon,” Nature 437, 1334–1336 (2005).
[Crossref] [PubMed]

Rubin, D.

Samara-Rubio, D.

Schmidt, B.

Q. Xu, B. Schmidt, S. Pradhan, and M. Lipson, “Micrometer-scale silicon electro-optic modulator,” Nature 435, 325–327 (2005).
[Crossref] [PubMed]

Soref, R.

R. Soref and B. Bennett, “Electrooptical effects in silicon,” IEEE J. Quantum Electron. QE-23123–129 (1987).
[Crossref]

Thanh, V. L.

A. Lupu, D. Marris, D. Pascal, J.-L. Cercus, A. Cordat, V. L. Thanh, and S. Laval, “Experimental evidence for index modulation by carrier depletion in SiGe/Si multiple quantum well structures,” App. Phys. Lett. 85, 887–889, (2004).
[Crossref]

Vivien, L.

S. Maine, D. Marris-Morini, L. Vivien, D. Pascal, E. Cassan, and S. Laval, “Design optimisation of SiGe/Si:modulation-doped multiple quantum well modulator for high speed operation,” in Proc SPIE 6183 (2006), 618360D1-6.
[Crossref]

D. Marris, E. Cassan, and L. Vivien, “Time response analysis of SiGe/Si modulation-doped multiple quantum well structures for optical modulation,” J. Appl. Phys. 96, 6109–6112, (2004).
[Crossref]

D. Marris-Morini, X. Le Roux, D. Pascal, L. Vivien, E. Cassan, J.M. Fédéli, J.F. Damlencourt, D. Bouville, J. Palomo, and S. Laval, “High speed all-silicon modulation-doped optical modulator,” presented at the EMRS-spring meeting, Nice, 29 mai-2 june 2006.

Wu, J.

P. Yu, J. Wu, and B. Zhu “Enhanced quantum-confined Pockels effect in SiGe superlattices,” Phys. Rev. B 73,235328 (2006).
[Crossref]

Xu, Q.

Q. Xu, B. Schmidt, S. Pradhan, and M. Lipson, “Micrometer-scale silicon electro-optic modulator,” Nature 435, 325–327 (2005).
[Crossref] [PubMed]

Yu, P.

P. Yu, J. Wu, and B. Zhu “Enhanced quantum-confined Pockels effect in SiGe superlattices,” Phys. Rev. B 73,235328 (2006).
[Crossref]

Zhu, B.

P. Yu, J. Wu, and B. Zhu “Enhanced quantum-confined Pockels effect in SiGe superlattices,” Phys. Rev. B 73,235328 (2006).
[Crossref]

Zsidri, B.

R.S. Jacobsen, K.N. Andersen, P.I. Borel, J. Page-Pedersen, L.H. Frandsen, O. Hansen, M. Kristensen, A.V. Lavrinenko, G. Moulin, H. Ou, C. Peucheret, B. Zsidri, and A. Bjarklev, “Strained silicon as a new electro-optical material,” Nature 441, 199–202 (2006).
[Crossref] [PubMed]

App. Phys. Lett. (1)

A. Lupu, D. Marris, D. Pascal, J.-L. Cercus, A. Cordat, V. L. Thanh, and S. Laval, “Experimental evidence for index modulation by carrier depletion in SiGe/Si multiple quantum well structures,” App. Phys. Lett. 85, 887–889, (2004).
[Crossref]

IEEE J. Quantum Electron. (1)

R. Soref and B. Bennett, “Electrooptical effects in silicon,” IEEE J. Quantum Electron. QE-23123–129 (1987).
[Crossref]

J. Appl. Phys. (1)

D. Marris, E. Cassan, and L. Vivien, “Time response analysis of SiGe/Si modulation-doped multiple quantum well structures for optical modulation,” J. Appl. Phys. 96, 6109–6112, (2004).
[Crossref]

Materials Todays (1)

G.T. Reed and C.E. Jason Png, “Silicon optical modulators,” Materials Todays40–50, (2005).
[Crossref]

Nature (3)

R.S. Jacobsen, K.N. Andersen, P.I. Borel, J. Page-Pedersen, L.H. Frandsen, O. Hansen, M. Kristensen, A.V. Lavrinenko, G. Moulin, H. Ou, C. Peucheret, B. Zsidri, and A. Bjarklev, “Strained silicon as a new electro-optical material,” Nature 441, 199–202 (2006).
[Crossref] [PubMed]

Y. Kuo, Y. Lee, Y. Ge, S. Ren, J. Roth, T. Kamins, D. Miller, and J. Harris “Strong quantum-confined Stark effect in germanium quantum well structures on silicon,” Nature 437, 1334–1336 (2005).
[Crossref] [PubMed]

Q. Xu, B. Schmidt, S. Pradhan, and M. Lipson, “Micrometer-scale silicon electro-optic modulator,” Nature 435, 325–327 (2005).
[Crossref] [PubMed]

Opt. Express (1)

Phys. Rev. B (1)

P. Yu, J. Wu, and B. Zhu “Enhanced quantum-confined Pockels effect in SiGe superlattices,” Phys. Rev. B 73,235328 (2006).
[Crossref]

Proc SPIE (1)

S. Maine, D. Marris-Morini, L. Vivien, D. Pascal, E. Cassan, and S. Laval, “Design optimisation of SiGe/Si:modulation-doped multiple quantum well modulator for high speed operation,” in Proc SPIE 6183 (2006), 618360D1-6.
[Crossref]

Other (3)

ISE software, http://www.ise.com/.

D. Marris-Morini, X. Le Roux, D. Pascal, L. Vivien, E. Cassan, J.M. Fédéli, J.F. Damlencourt, D. Bouville, J. Palomo, and S. Laval, “High speed all-silicon modulation-doped optical modulator,” presented at the EMRS-spring meeting, Nice, 29 mai-2 june 2006.

PhotonDesign software, http://www.photond.com.

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Figures (5)

Fig. 1.
Fig. 1.

Device structure: a highly doped P+ layer is inserted in a silicon PIN diode.

Fig. 2.
Fig. 2.

Example of experimental transmission spectra of the device recorded for 0V and - 4V.

Fig. 3.
Fig. 3.

Experimental effective index variation versus PIN bias voltage: measured effective index variation, electrical (due to hole depletion) and thermal contributions.

Fig. 4.
Fig. 4.

Experimental current/voltage characteristic of the diode.

Fig. 5.
Fig. 5.

Theoretical effective index variation versus PIN bias voltage.

Equations (6)

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2 n eff ( λ ) L =
Δ n eff ( λ ) = Δ λ λ n g ( λ )
n g ( λ p ) = λ p 2 2 L Δ λ p
L π = λ 2 Δ n eff
Δ n = 8,8 . 10 22 Δ N 8,5 . 10 18 Δ P 0,8
Δ α = 8,5 . 10 18 Δ N + 6,0 . 10 18 Δ P

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