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Coupling analysis of heterogeneous integrated InP based photonic crystal triangular lattice band-edge lasers and silicon waveguides

Haroldo T. Hattori, Christian Seassal, Xavier Letartre, Pedro Rojo-Romeo, Jean L. Leclercq, Pierre Viktorovitch, Marc Zussy, Lea di Cioccio, Loubna El Melhaoui, and Jean-Marc Fedeli

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Abstract

In recent years, many groups have envisioned the possibility of integrating optical and electronic devices in a single chip. In this paper, we study the integration of a photonic crystal laser fabricated in InP with a silicon passive waveguide. The coupling of energy between a 2D photonic crystal (PhC) triangular lattice band-edge laser and waveguide positioned underneath is analyzed in this paper. We show that a 40% coupling could be achieved provided the distance between the laser and the waveguide is carefully adjusted. A general description of the fabrication process used to realize these devices is also included in this paper.

©2005 Optical Society of America

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Figures (10)
Fig. 1.
Fig. 1. A general scheme of a guided optical interconnect

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Fig. 2.
Fig. 2. (a). Z-cut view of the structure, showing a triangular lattice PhC and the waveguide situated in the bottom of the PhC. The waveguide is oriented in the ΓK direction (b) Vertical structure of the device, showing different layers. The silicon waveguide is surrounded (laterally) by a silica layer

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Fig. 3.
Fig. 3. Band diagram of the triangular lattice PhC structure

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Fig. 4.
Fig. 4. (a). 3D FDTD spectrum of |Hz2| as a function of the wavelength for the basic structure with no waveguide (b) Total quality factor (measured in the waveguide) and (c) quality factor related to coupling losses as a function of h2. (d) Coupling efficiency as a function of h2. Results for the basic structure.

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Fig. 5.
Fig. 5. (a). Field distribution (Hz component) in the PhC region (x-y plane). (b) Hz field distribution in the waveguide (x-y plane). (c) y-cut of the device, showing the field distribution of Hz. All these Fig. are for h2=600 nm

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Fig. 6.
Fig. 6. (a). Z-cut view of the structure, showing the main PhC shielded by another triangular lattice PhC with lower FF (operating at its bandgap). The waveguide situated at the bottom of the structure has a 1D grating in one of his sides, also operating at the bandgap. (b) 3D FDTD spectrum of |Hz2| as a function of the wavelength for this structure with no waveguide.

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Fig. 7.
Fig. 7. (a). Total quality factor (measured in the waveguide) as a function of h2. (b) Quality factor corresponding to coupling losses into the waveguide. (c) Coupling efficiency as a function of h2. Results for the shielded structure.

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Fig. 8.
Fig. 8. (a). |Hz| field distribution in the PhC region. (b) |Hz | field distribution in the waveguide. (c) |Hz| vertical field distribution in the x-z plane. All these Fig. are for h2=500 nm.

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Fig. 9.
Fig. 9. Schematic description of the process steps used to fabricate PhC III–V microlaser on top of Si waveguides.

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Fig. 10.
Fig. 10. SEM view of a III–V PhC micro-resonator (an hexagonal cavity) processed on top of a Si waveguide

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Equations (4)

Equations on this page are rendered with MathJax. Learn more.

∣ K → Γ K ∣ = 4 π 3 Λ
∣ K → Γ M ∣ = 2 π Λ 3
1 Q t = 1 Q i + 1 Q c
η c = 1 Q c 1 Q i + 1 Q c
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