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Photochromic diarylethene for rewritable holographic data storage

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Abstract

A new diarylethene doped with poly(methyl methacrylate) film is developed and its characteristics of volume holographic recording are investigated. The maximum diffraction efficiency of the 10µm thick film is 1.2%, and the rewritable hologram recording exhibits its high resolution, fatigue resistance, negligible shrinkage, and long lifetime, which are critical to apply this material to high-density rewritable holographic data storage.

©2005 Optical Society of America

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Figures (7)

Scheme 1.
Scheme 1. Photoisomerization of the diarylethene.
Fig. 1.
Fig. 1. Absorption of the diarylethene doped PMMA film at open-ring form 1a (solid line) and closed-ring form1b (dashed line).
Fig. 2.
Fig. 2. Theoretical simulation of normalized concentration of molecules 1b for T 0<T 1<T 2<T 3 under illumination. The grating form changes from a sinusoidal shape at low exposures (linear part) to a “rectangular” shape at high exposures (nonlinear part)
Fig. 3.
Fig. 3. Diffraction efficiency dynamics during holographic recording
Fig. 4.
Fig. 4. Experimental setup for holographic recording and readout. HP1 and HP2: half-wave plates, S1 and S2: shutters, M1 and M2: reflecting mirrors, PBS: polarized beam-splitting prism, EL: beam-expanding lens, FL1 and FL2: Fourier lens, RC: resolution chart.
Fig. 5.
Fig. 5. (a) Original resolution chart image without the sample film in the beam path; (b) attenuated see-through resolution chart image with the sample film in the beam path; (c) resolution chart image reconstructed with the reference beam (d) resolution chart image reconstructed with the reference beam after 100 write/erase cycles.
Fig. 6.
Fig. 6. The reconstruction of the recorded hologram after the sample had been kept for ten months in darkness at room temperature.

Equations (4)

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u b ( x , t ) = u 0 exp { t τ [ 1 + m cos ( 2 π x Λ ) ] } ,
u b ( x , t ) = u b 0 ( t ) + u b 1 ( t ) cos ( 2 π x Λ )
= u 0 exp ( t τ ) u 0 m t τ exp ( t τ ) cos ( 2 π x Λ ) ,
η = k [ u 0 mt τ exp ( t τ ) ] 2 ,
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