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Electrically driven silicon resonant light emitting device based on slot-waveguide

Carlos Angulo Barrios and Michal Lipson

Open Access Open Access

Abstract

An all-silicon in-plane micron-size electrically driven resonant cavity light emitting device (RCLED) based on slotted waveguide is proposed and modeled. The device consists of a microring resonator formed by Si/SiO2 slot-waveguide with a low-index electroluminescent material (erbium-doped SiO2) in the slot region. The geometry of the slot-waveguide permits the definition of a metal-oxide-semiconductor (MOS) configuration for the electrical excitation of the active material. Simulations predict a quality factor Q of 6,700 for a 20-μm-radius electrically driven microring RCLED capable to operate at a very low bias current of 0.75 nA. Lasing conditions are also discussed.

©2005 Optical Society of America

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Figures (7)
Fig. 1.
Fig. 1. (a) Schematic top view of an electrically-driven microring light emitting device based on Si/SiO2 slot-waveguides. (b) Schematic cross-sectional view of the MOS slot-waveguide that forms the ring. The dashed blue arrows indicate the flow of electrical current when the device is biased (Vanode-Vcathode>0).

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Fig. 2.
Fig. 2. Transverse E-field amplitude (contour) of the quasi-TE optical mode.

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Fig. 3.
Fig. 3. Transverse E-field amplitude (contour) of the quasi-TE optical mode for a bent slot-waveguide turning to the left (-x axis) with a radius of curvature of 20 μm.

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Fig. 4.
Fig. 4. Calculated spectral transmittance of the ring resonator shown in Fig. 1(a). The quality factor Q is 6,700.

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Fig. 5.
Fig. 5. (a) 2-D distribution of the applied electric field for a bias voltage of 55 V. (b) 2-D profile of the applied electric field.

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Fig. 6.
Fig. 6. (a) Schematic cross-sectional view of a horizontal MOS slot-waveguide. The dashed blue arrows indicate the flow of injected electrons through the active gate oxide. (b) Transverse E-field amplitude (contour) of the quasi-TM optical mode.

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Fig. 7.
Fig. 7. Fabry-Perot microcavity LED based on a slot-waveguide. Two DBRs defined the resonant structure. A MOS diode is defined in the cavity region for electrical pumping of the active material.

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Equations (2)

Equations on this page are rendered with MathJax. Learn more.

Δ n = Δ n e + Δ n h = − [ 8.8 × 10 − 22 ∙ Δ N + 8.5 × 10 − 18 ∙ ( Δ P ) 0.8 ]
Δ α = Δ α e + Δ α h = 8.5 × 10 − 18 ∙ Δ N + 6.0 × 10 − 18 ∙ Δ P
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