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Design of photonic band gap nanocavities for stimulated Raman amplification and lasing in monolithic silicon

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Abstract

The concept and design of L5 photonic band gap nanocavities in two-dimensional photonic crystal slabs for enhancement of stimulated Raman amplification and lasing in monolithic silicon is suggested for the first time. Specific high quality factor and small modal volume nanocavities are designed which supports the required pump-Stokes modal spacing in silicon, with ultralow lasing thresholds.

©2005 Optical Society of America

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Figures (4)

Fig. 1.
Fig. 1. (a) Resonant frequencies of the pump and Stokes modes within the photonic band gap. (b) Qpump and QStokes as a function of shift S1 .
Fig. 2.
Fig. 2. The electric field profile (Ey ) (a) and 2D FT spectrum (b) of pump mode.
Fig. 3.
Fig. 3. The electric field profile (Ey ) (a) and 2D FT spectrum (b) of Stokes mode.
Fig. 4.
Fig. 4. SEM picture of the PhC L5 nanocavity for Raman lasing in silicon.

Tables (1)

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Table 1. Design summary of photonic crystal L5 nanocavity for Raman lasing in silicon.

Equations (6)

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± A p ± z + 1 v p A p ± t = { g p 2 ( A S + 2 + A S 2 ) + i γ p [ A p ± 2 + 2 ( A p 2 + A S + 2 + A S 2 ) ] α p 2
β [ A p ± 2 + 2 ( A p 2 + A S + 2 + A S 2 ) ] φ ̅ λ p 2 N ̅ eff } A p ±
± A S ± z + 1 v s A S ± t = { g s 2 ( A p + 2 + A p 2 ) + i γ s [ A S ± 2 + 2 ( A S 2 + A p + 2 + A p 2 ) ] α s 2
β [ A S ± 2 + 2 ( A S 2 + A p + 2 + A p 2 ) ] φ ̅ λ S 2 N ̅ eff } A S ±
+ i κ A S + i δ β A S ±
P threshold = π 2 n s n p g s ξ λ s λ p V m Q s Q p
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