Abstract
The light extraction efficiency of GaN-based LEDs as a function of the position of the light source over the active layer is studied. Several parameters, including chip dimensions, absorption coefficients and package are analyzed on the basis of a Monte-Carlo ray tracing simulation. The light extraction efficiency of a Thin-GaN LED is studied with respect to a sapphire-based LED, including the surface texture.
©2005 Optical Society of America
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