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Analysis of position-dependent light extraction of GaN-based LEDs

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Abstract

The light extraction efficiency of GaN-based LEDs as a function of the position of the light source over the active layer is studied. Several parameters, including chip dimensions, absorption coefficients and package are analyzed on the basis of a Monte-Carlo ray tracing simulation. The light extraction efficiency of a Thin-GaN LED is studied with respect to a sapphire-based LED, including the surface texture.

©2005 Optical Society of America

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Figures (6)

Fig. 1.
Fig. 1. LEE vs. absorption coefficient of the active layer for the point sources in three different positions.
Fig. 2.
Fig. 2. LEE vs. chip dimensions for center and corner point sources.
Fig. 3.
Fig. 3. LEE vs. absorption coefficient of the active layer on different faces of the LED.
Fig. 4.
Fig. 4. A comparison of the LEEs of sapphire-based and Thin-GaN LEDs with different absorption coefficients. The blue and orange bars indicate the LEE from the top surface and other surfaces, respectively. Both of the LEDs are coated with reflective film with a reflectivity of A, 100%; B, 85%; and C, 75%.
Fig. 5.
Fig. 5. Four types of LEDs with different surface textures, the upper ones represent sapphire-based LEDs and the lower ones are Thin-GaN LEDs.
Fig. 6.
Fig. 6. A comparison of the LEEs for the four cases.

Tables (1)

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Table 1. Parameters of each layer in the simulated LED.

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