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Sub-picosecond all-optical gate utilizing aN intersubband transition

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Abstract

All-optical gate-switch operation utilizing GaN intersubband transition has been achieved by reducing edge dislocation density in the epitaxial layers. The diminution of dislocation was accomplished by MBE regrowth on an MOCVD-grown layer. Excess propagation loss for transverse magnetic polarization decreased due to the reduction of the dislocation. By the improvement of the propagation property, sub-picosecond all-optical gate with an extinction ratio of more than 10 dB was accomplished with an input pulse energy of 150 pJ. Moreover, the insertion loss with the switch on was improved.

©2005 Optical Society of America

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Figures (4)

Fig. 1.
Fig. 1. Schematic cross section of the optical switch.
Fig. 2.
Fig. 2. Schematic diagram of the measurement setup.
Fig. 3.
Fig. 3. Dependence of transmittance for TM-polarization on pulse energy for samples A and B. The pulse width was 130 fs.
Fig. 4.
Fig. 4. Results of pump-probe measurements for samples A and B.
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