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Self-phase-modulation induced spectral broadening in silicon waveguides

Ozdal Boyraz, Tejaswi Indukuri, and Bahram Jalali

Open Access Open Access

Abstract

The prospect for generating supercontinuum pulses on a silicon chip is studied. Using ~4ps optical pulses with 2.2GW/cm2 peak power, a 2 fold spectral broadening is obtained. Theoretical calculations, that include the effect of two-photon-absorption, indicate up to 5 times spectral broadening is achievable at 10× higher peak powers. Representing a nonlinear loss mechanism at high intensities, TPA limits the maximum optical bandwidth that can be generated.

©2004 Optical Society of America

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Figures (5)
Fig. 1.
Fig. 1. Experimental setup used for measuring SPM in 2cm long silicon waveguides. 4ps short pulses with 2.2GW/cm2 peak power level propagated through silicon waveguides and spectral broadening is measured at the output.

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Fig. 2.
Fig. 2. SEM picture and schematic drawing of the tapered silicon waveguide.

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Fig. 3.
Fig. 3. Measured spectrum at the filter output, at the waveguide input and broadened spectrum at the waveguide output.

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Fig. 4.
Fig. 4. Effective loss profile inside the waveguide. Due to two photon absorption light is attenuated rapidly in the front end of the waveguide.

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Fig. 5.
Fig. 5. Simulated spectrum broadening versus power density, for a chirped Gaussian input pulse. Results show a 5 times broadening for 20 GW/cm2 peak intensity values. A 10× broadening can be achieved with a transform-limited input pulse. The maximum spectrum broadening is limited by two photon absorption.

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