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Demonstration of a silicon Raman laser

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Abstract

We report the demonstration of the first silicon Raman laser. Experimentally, pulsed Raman laser emission at 1675 nm with 25 MHz repetition rate is demonstrated using a silicon waveguide as the gain medium. The laser has a clear threshold at 9 W peak pump pulse power and a slope efficiency of 8.5%.

©2004 Optical Society of America

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Figures (5)

Fig. 1.
Fig. 1. Measured on-off gain in the silicon waveguide for a probe signal at 1675 nm. Pumping was done at 1540 nm with 30 ps pulses.
Fig. 2.
Fig. 2. Experimental set up used for silicon Raman laser demonstration. A ring cavity configuration is used as a resonator. A modelocked fiber laser at 1540nm is used as a pump laser. The lasing is obtained at the Stokes wavelength of 1675 nm.
Fig. 3.
Fig. 3. Measured laser output power with respect to peak pump power. Lasing threshold is measured to be at 9 W peak power level. The slope efficiency is ~8.5%.
Fig. 4.
Fig. 4. Measured laser and pump spectra. The laser spectrum has 0.36 nm spectral bandwidth and is located 15.6 THz away from the pump laser. The pump-output separation is precisely the optical phonon frequency in silicon.
Fig. 5.
Fig. 5. Measured temporal profile of the laser output. (a) 25 ps pulse trace obtained by an autocorrelator at 1675 nm. (b) Oscilloscope trace shows 25 MHz pulse train at 1675 nm.
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