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Fabrication and characterization of low loss rib chalcogenide waveguides made by dry etching

Yinlan Ruan, Weitang Li, Ruth Jarvis, Nathan Madsen, Andrei Rode, and Barry Luther-Davies

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Abstract

We report the fabrication and characterization of rib chalcogenide waveguides produced by dry etching with CF4 and O2. The high index contrast waveguides (Δn ~ 1) show a minimum propagation loss of 0.25 dB/cm. The high refractive nonlinearity of ~ 100 times silica in As2S3 allowed observation of a π phase shift due to self-phase modulation of an 8 ps duration 1573 nm pulse in a 5 cm long waveguide.

©2004 Optical Society of America

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Figures (4)
Fig. 1.
Fig. 1. SEM images showing the profile of As2S3 waveguides etched by helicon plasma using Al masks (a) showing vertical sidewall but corner damage resulted from weak adhesion between Al and As2S3 layer; (b) rough Al mask resulted in rough waveguide sidewall; (c) the cross-section showing smooth corner by inserting a thin photoresist layer; (d) smooth Al mask as well as vertical and smooth waveguide sidewall.

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Fig. 2.
Fig. 2. SEM micrographs showing the profile of As2S3 waveguides etched by ICP using photoresist mask (a) As2S3 waveguide with photoresist mask (b) coating with polysiloxane cladding, its width is well controlled as required.

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Fig. 3.
Fig. 3. (a) rib waveguide structure; (b) the output mode from As2S3 rib waveguide with a=4.2, b=1.8, and c=2.7 μm showing single mode propagation; (c) light transmission as a function of the waveguide length at 1550 nm.

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Fig. 4.
Fig. 4. (a) Spectrum of input signal at 1573 nm; (b) spectral broadening corresponding to π phase shift and peak power 40 W in the waveguide

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