Abstract

We studied the onset of induced optical absorption in mono- and polycrystalline Y3Al5O12:Nd3+ samples upon irradiation by a nanosecond electron beam with electron energy of 250 keV and current density of 25A/cm2. We show that in such crystalline samples, the fast electrons produce induced absorption between 1 and 4.2 eV expressed as a superposition of six adjacent elementary lines. We found that the induced absorption is due to electron transitions from the valence band to a local level around an O–hole center, while the initial-phase (10−7−10−4s) relaxation of the induced absorption is determined by quadratic recombination of conduction-band electrons with the O–hole centers. The higher density of structural defects in the polycrystalline sample than the monocrystalline sample increases the band-electron lifetime against capture by O centers.

© 2020 Optical Society of America

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