Abstract

This paper discusses the characteristics of ZnO:Er ceramics fabricated by uniaxial hot pressing. It establishes that the introduction of 0.16–1.0 mass% erbium into the zinc oxide structure reduces the grain size of the ceramic and causes absorption bands to appear in the visible and IR regions, corresponding to interconfiguration transitions from the ground state to the excited states of the $ {\rm Er}^{3 +} $Er3+ ions, along with characteristic emission bands in the visible region. Increasing the erbium concentration causes the long-wavelength transmission limit of the ZnO:Er ceramic to shift toward shorter wavelengths by 2–3 µm relative to the undoped ceramic; this is associated with an increase of the charge-carrier concentration from $ 4.9 \times {10^{18}} $4.9×1018 to $ 1.4 \times {10^{19}}\,\,{\rm cm}^{{ - 3}} $1.4×1019cm−3. Moreover, as the erbium concentration is increased, the defect luminescence band becomes less intense, and the scintillation burst falls off more rapidly.

© 2020 Optical Society of America

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