Abstract

The formation of defects in Cd_xHg_1−xTe (x≈0.2) during etching with ions of argon (1 keV) and their behavior during annealing were studied. The nature of these defects was established. The concentration of the majority charge carriers during annealing was determined by measuring the dependence of the voltage sensitivity on the bias voltage of photoresistors fabricated from Cd_xHg_1−xTe heteroepitaxial structures (x≈0.2) obtained by molecular beam epitaxy. It is shown that the change in the concentration of the majority charge carriers during the annealing process is determined by the diffusion of singly charged donors, which are mercury vacancy complexes with excessive interstitial mercury, and by the diffusion coefficients of singly and doubly charged mercury vacancies, whose concentrations are determined by the equilibrium concentrations of point defects.

© 2017 Optical Society of America

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