Abstract

This paper presents the results of the development and commercial production of photoresistors from Cd_xHg_1−xTe heteroepitaxial structures obtained by molecular epitaxy for IR engineering on the 2–15 μm spectral range. Various photoresistor designs with cooling to 80 and 230 K are presented, along with their main photoelectric parameters. The reliability of the photoresistors in terms of the gamma-percentage time to failure is calculated.

© 2017 Optical Society of America

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