Abstract

Samples of the optical scintillation ceramic ZnO:In with an indium concentration from 0.075 to 1.6 mass% have been obtained by uniaxial hot pressing. Studies have established that indium has a significant and nontrivial influence on the structure, the character of the microstructure, the spectral transmittance, and the x-ray luminescence spectra and kinetics of ZnO:In. The optimum dopant concentration has been determined at which an optical scintillation ceramic is formed that has relatively intense edge luminescence with its maximum at 388 nm and a decay time of about 1.1 ns.

© 2016 Optical Society of America

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