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How plasma preprocessing affects the luminescence properties of porous silicon

N. G. Galkin, E. A. Chusovitin, A. B. Rasin, K. N. Galkin, M. V. Bozhenko, V. V. Mararov, D. T. Yan, V. M. Astashinskiĭ, and A. M. Kuz’mitskiĭ

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Abstract

Measurements have been made of the radiative properties of porous silicon obtained by anodic etching of plasma-processed p-type single-crystal silicon (100). It is found that the photoluminescence intensity of the test samples is significantly greater than that of porous silicon obtained on the surface of single-crystal silicon with no plasma preprocessing.

© 2014 Optical Society of America

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