Abstract

This paper discusses optical transitions in a structure with deep quantum wells with a type-I band diagram, containing deep impurities in the barrier region. The tunnel-Hamiltonian formalism is used to obtain expressions for the phototransition rates between the states in the valence band in the quantum well and the levels of the deep impurity centers. It is shown that the photocharging rate of the impurities sharply increases when the light frequency is above a certain threshold.

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  1. A. V.  Fedorov, ed., Optics of Nanostructures (Izd. Nedra, St. Petersburg, 2005).
  2. S. V.  Gaponenko, Optical properties of semiconductor nanocrystals (Cambridge University, Cambridge, 1998).
  3. E.  Burstein, S.  Lundquist, eds., Tunneling Phenomena in Solids (Plenum, New York, 1969; Mir, Moscow, 1973).
  4. E. Yu.  Perlin, “Photostimulated tunnel and above-barrier injection in semiconductors,” Pis’ma Zh. Tekh. Fiz. 1, 754 (1975) [Tech. Phys. Lett. 1, 329 (1975)].
  5. E. Yu.  Perlin, R. G.  Useĭnov, “Luminescence caused by photoinduced injection in contact structures,” Izv. Akad. Nauk SSSR. Ser. Fiz. 40, 1899 (1976).
  6. E. Yu.  Perlin, R. G.  Useĭnov, “Tunnel and above-barrier injection in p–n junctions stimulated by intense light,” in Inhomogeneous and Impurity Semiconductors in External Fields (Izd. Shtiintsa, Kishinev, 1979), pp. 47–63.
  7. E. Yu.  Perlin, R. G.  Useĭnov, “Pseudo-tunnel phototransitions in semiconductors,” Fiz. Tekh. Poluprovodn. 13, No. 9, 1756 (1979) [Sov. Phys. Semicond. 13, 1022 (1979)].
  8. R. G.  Useĭnov, E. Yu.  Perlin, “Radiative recombination accompanied by scattering in impurities in tunnel diodes,” Fiz. Tekh. Poluprovodn. 16, 1010 (1982) [Sov. Phys. Semicond. 16, 648 (1982)].
  9. E. Yu.  Perlin, R. G.  Useĭnov, “Phototransitions accompanied by scattering at impurities in tunnel diodes,” Fiz. Tekh. Poluprovodn. 14, 570 (1980) [Sov. Phys. Semicond. 14, 337 (1980)].
  10. S. N.  Arbuzov, M. N.  Kolbin, E. Yu.  Perlin, R. G.  Useĭnov, “Optical tunnel charging of traps of the anodic oxide of InSb,” Fiz. Tekh. Poluprovodn. 15, 1420 (1981) [Sov. Phys. Semicond. 15, 821 (1981)].
  11. R. S.  Levitskiĭ, A. V.  Ivanov, E. Yu.  Perlin, “The photon-avalanche effect in type-I heterostructures with deep quantum wells,” Opt. Zh. 73, No. 2, 3 (2006) [J. Opt. Technol. 73, 71 (2006)].
  12. R. S.  Levitskiĭ, E. Yu.  Perlin, A. A.  Popov, “Multiphoton generation of electron-hole pairs in crystals with deep impurities. I. Two-photon band-impurity transition probabilities,” Opt. Zh. 77, No. 10, 3 (2010) [J. Opt. Technol. 77, 593 (2010)].

2010 (1)

R. S.  Levitskiĭ, E. Yu.  Perlin, A. A.  Popov, “Multiphoton generation of electron-hole pairs in crystals with deep impurities. I. Two-photon band-impurity transition probabilities,” Opt. Zh. 77, No. 10, 3 (2010) [J. Opt. Technol. 77, 593 (2010)].

2006 (1)

R. S.  Levitskiĭ, A. V.  Ivanov, E. Yu.  Perlin, “The photon-avalanche effect in type-I heterostructures with deep quantum wells,” Opt. Zh. 73, No. 2, 3 (2006) [J. Opt. Technol. 73, 71 (2006)].

1982 (1)

R. G.  Useĭnov, E. Yu.  Perlin, “Radiative recombination accompanied by scattering in impurities in tunnel diodes,” Fiz. Tekh. Poluprovodn. 16, 1010 (1982) [Sov. Phys. Semicond. 16, 648 (1982)].

1981 (1)

S. N.  Arbuzov, M. N.  Kolbin, E. Yu.  Perlin, R. G.  Useĭnov, “Optical tunnel charging of traps of the anodic oxide of InSb,” Fiz. Tekh. Poluprovodn. 15, 1420 (1981) [Sov. Phys. Semicond. 15, 821 (1981)].

1980 (1)

E. Yu.  Perlin, R. G.  Useĭnov, “Phototransitions accompanied by scattering at impurities in tunnel diodes,” Fiz. Tekh. Poluprovodn. 14, 570 (1980) [Sov. Phys. Semicond. 14, 337 (1980)].

1979 (1)

E. Yu.  Perlin, R. G.  Useĭnov, “Pseudo-tunnel phototransitions in semiconductors,” Fiz. Tekh. Poluprovodn. 13, No. 9, 1756 (1979) [Sov. Phys. Semicond. 13, 1022 (1979)].

1976 (1)

E. Yu.  Perlin, R. G.  Useĭnov, “Luminescence caused by photoinduced injection in contact structures,” Izv. Akad. Nauk SSSR. Ser. Fiz. 40, 1899 (1976).

1975 (1)

E. Yu.  Perlin, “Photostimulated tunnel and above-barrier injection in semiconductors,” Pis’ma Zh. Tekh. Fiz. 1, 754 (1975) [Tech. Phys. Lett. 1, 329 (1975)].

Arbuzov, S. N.

S. N.  Arbuzov, M. N.  Kolbin, E. Yu.  Perlin, R. G.  Useĭnov, “Optical tunnel charging of traps of the anodic oxide of InSb,” Fiz. Tekh. Poluprovodn. 15, 1420 (1981) [Sov. Phys. Semicond. 15, 821 (1981)].

Gaponenko, S. V.

S. V.  Gaponenko, Optical properties of semiconductor nanocrystals (Cambridge University, Cambridge, 1998).

Ivanov, A. V.

R. S.  Levitskiĭ, A. V.  Ivanov, E. Yu.  Perlin, “The photon-avalanche effect in type-I heterostructures with deep quantum wells,” Opt. Zh. 73, No. 2, 3 (2006) [J. Opt. Technol. 73, 71 (2006)].

Kolbin, M. N.

S. N.  Arbuzov, M. N.  Kolbin, E. Yu.  Perlin, R. G.  Useĭnov, “Optical tunnel charging of traps of the anodic oxide of InSb,” Fiz. Tekh. Poluprovodn. 15, 1420 (1981) [Sov. Phys. Semicond. 15, 821 (1981)].

Levitskii, R. S.

R. S.  Levitskiĭ, E. Yu.  Perlin, A. A.  Popov, “Multiphoton generation of electron-hole pairs in crystals with deep impurities. I. Two-photon band-impurity transition probabilities,” Opt. Zh. 77, No. 10, 3 (2010) [J. Opt. Technol. 77, 593 (2010)].

R. S.  Levitskiĭ, A. V.  Ivanov, E. Yu.  Perlin, “The photon-avalanche effect in type-I heterostructures with deep quantum wells,” Opt. Zh. 73, No. 2, 3 (2006) [J. Opt. Technol. 73, 71 (2006)].

Perlin, E. Yu.

R. S.  Levitskiĭ, E. Yu.  Perlin, A. A.  Popov, “Multiphoton generation of electron-hole pairs in crystals with deep impurities. I. Two-photon band-impurity transition probabilities,” Opt. Zh. 77, No. 10, 3 (2010) [J. Opt. Technol. 77, 593 (2010)].

R. S.  Levitskiĭ, A. V.  Ivanov, E. Yu.  Perlin, “The photon-avalanche effect in type-I heterostructures with deep quantum wells,” Opt. Zh. 73, No. 2, 3 (2006) [J. Opt. Technol. 73, 71 (2006)].

R. G.  Useĭnov, E. Yu.  Perlin, “Radiative recombination accompanied by scattering in impurities in tunnel diodes,” Fiz. Tekh. Poluprovodn. 16, 1010 (1982) [Sov. Phys. Semicond. 16, 648 (1982)].

S. N.  Arbuzov, M. N.  Kolbin, E. Yu.  Perlin, R. G.  Useĭnov, “Optical tunnel charging of traps of the anodic oxide of InSb,” Fiz. Tekh. Poluprovodn. 15, 1420 (1981) [Sov. Phys. Semicond. 15, 821 (1981)].

E. Yu.  Perlin, R. G.  Useĭnov, “Phototransitions accompanied by scattering at impurities in tunnel diodes,” Fiz. Tekh. Poluprovodn. 14, 570 (1980) [Sov. Phys. Semicond. 14, 337 (1980)].

E. Yu.  Perlin, R. G.  Useĭnov, “Pseudo-tunnel phototransitions in semiconductors,” Fiz. Tekh. Poluprovodn. 13, No. 9, 1756 (1979) [Sov. Phys. Semicond. 13, 1022 (1979)].

E. Yu.  Perlin, R. G.  Useĭnov, “Luminescence caused by photoinduced injection in contact structures,” Izv. Akad. Nauk SSSR. Ser. Fiz. 40, 1899 (1976).

E. Yu.  Perlin, “Photostimulated tunnel and above-barrier injection in semiconductors,” Pis’ma Zh. Tekh. Fiz. 1, 754 (1975) [Tech. Phys. Lett. 1, 329 (1975)].

E. Yu.  Perlin, R. G.  Useĭnov, “Tunnel and above-barrier injection in p–n junctions stimulated by intense light,” in Inhomogeneous and Impurity Semiconductors in External Fields (Izd. Shtiintsa, Kishinev, 1979), pp. 47–63.

Popov, A. A.

R. S.  Levitskiĭ, E. Yu.  Perlin, A. A.  Popov, “Multiphoton generation of electron-hole pairs in crystals with deep impurities. I. Two-photon band-impurity transition probabilities,” Opt. Zh. 77, No. 10, 3 (2010) [J. Opt. Technol. 77, 593 (2010)].

Useinov, R. G.

R. G.  Useĭnov, E. Yu.  Perlin, “Radiative recombination accompanied by scattering in impurities in tunnel diodes,” Fiz. Tekh. Poluprovodn. 16, 1010 (1982) [Sov. Phys. Semicond. 16, 648 (1982)].

S. N.  Arbuzov, M. N.  Kolbin, E. Yu.  Perlin, R. G.  Useĭnov, “Optical tunnel charging of traps of the anodic oxide of InSb,” Fiz. Tekh. Poluprovodn. 15, 1420 (1981) [Sov. Phys. Semicond. 15, 821 (1981)].

E. Yu.  Perlin, R. G.  Useĭnov, “Phototransitions accompanied by scattering at impurities in tunnel diodes,” Fiz. Tekh. Poluprovodn. 14, 570 (1980) [Sov. Phys. Semicond. 14, 337 (1980)].

E. Yu.  Perlin, R. G.  Useĭnov, “Pseudo-tunnel phototransitions in semiconductors,” Fiz. Tekh. Poluprovodn. 13, No. 9, 1756 (1979) [Sov. Phys. Semicond. 13, 1022 (1979)].

E. Yu.  Perlin, R. G.  Useĭnov, “Luminescence caused by photoinduced injection in contact structures,” Izv. Akad. Nauk SSSR. Ser. Fiz. 40, 1899 (1976).

E. Yu.  Perlin, R. G.  Useĭnov, “Tunnel and above-barrier injection in p–n junctions stimulated by intense light,” in Inhomogeneous and Impurity Semiconductors in External Fields (Izd. Shtiintsa, Kishinev, 1979), pp. 47–63.

Fiz. Tekh. Poluprovodn. (4)

E. Yu.  Perlin, R. G.  Useĭnov, “Pseudo-tunnel phototransitions in semiconductors,” Fiz. Tekh. Poluprovodn. 13, No. 9, 1756 (1979) [Sov. Phys. Semicond. 13, 1022 (1979)].

R. G.  Useĭnov, E. Yu.  Perlin, “Radiative recombination accompanied by scattering in impurities in tunnel diodes,” Fiz. Tekh. Poluprovodn. 16, 1010 (1982) [Sov. Phys. Semicond. 16, 648 (1982)].

E. Yu.  Perlin, R. G.  Useĭnov, “Phototransitions accompanied by scattering at impurities in tunnel diodes,” Fiz. Tekh. Poluprovodn. 14, 570 (1980) [Sov. Phys. Semicond. 14, 337 (1980)].

S. N.  Arbuzov, M. N.  Kolbin, E. Yu.  Perlin, R. G.  Useĭnov, “Optical tunnel charging of traps of the anodic oxide of InSb,” Fiz. Tekh. Poluprovodn. 15, 1420 (1981) [Sov. Phys. Semicond. 15, 821 (1981)].

Izv. Akad. Nauk SSSR. Ser. Fiz. (1)

E. Yu.  Perlin, R. G.  Useĭnov, “Luminescence caused by photoinduced injection in contact structures,” Izv. Akad. Nauk SSSR. Ser. Fiz. 40, 1899 (1976).

Opt. Zh. (2)

R. S.  Levitskiĭ, A. V.  Ivanov, E. Yu.  Perlin, “The photon-avalanche effect in type-I heterostructures with deep quantum wells,” Opt. Zh. 73, No. 2, 3 (2006) [J. Opt. Technol. 73, 71 (2006)].

R. S.  Levitskiĭ, E. Yu.  Perlin, A. A.  Popov, “Multiphoton generation of electron-hole pairs in crystals with deep impurities. I. Two-photon band-impurity transition probabilities,” Opt. Zh. 77, No. 10, 3 (2010) [J. Opt. Technol. 77, 593 (2010)].

Pis’ma Zh. Tekh. Fiz. (1)

E. Yu.  Perlin, “Photostimulated tunnel and above-barrier injection in semiconductors,” Pis’ma Zh. Tekh. Fiz. 1, 754 (1975) [Tech. Phys. Lett. 1, 329 (1975)].

Other (4)

E. Yu.  Perlin, R. G.  Useĭnov, “Tunnel and above-barrier injection in p–n junctions stimulated by intense light,” in Inhomogeneous and Impurity Semiconductors in External Fields (Izd. Shtiintsa, Kishinev, 1979), pp. 47–63.

A. V.  Fedorov, ed., Optics of Nanostructures (Izd. Nedra, St. Petersburg, 2005).

S. V.  Gaponenko, Optical properties of semiconductor nanocrystals (Cambridge University, Cambridge, 1998).

E.  Burstein, S.  Lundquist, eds., Tunneling Phenomena in Solids (Plenum, New York, 1969; Mir, Moscow, 1973).

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