Abstract

This paper discusses multiphoton optical transitions in a structure that has deep quantum wells and contains deep impurities in the barrier region. The tunnel-Hamiltonian formalism is used to obtain expressions for the s-photon transition rates (with arbitrary integral values of s) between states in the valence band in a quantum well and the levels of the deep impurity centers. It is shown that the multiphoton mechanism of pseudotunnel photocharging of the impurities has definite advantages over the single-photon mechanism.

© 2014 Optical Society of America

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