Abstract

This paper discusses the luminescence properties of anodized porous silicon with various degrees of oxidation. The effect of laser excitation and photostimulated anodization on the photoluminescence intensity of porous silicon is considered. A model is proposed for photoluminescence in porous silicon.

© 2013 Optical Society of America

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  1. L. T.  Canham, “Visible photoluminescence of porous Si,” Appl. Phys. Lett. 57, 1046 (1990).
    [CrossRef]
  2. V.  Ranjan, V. A.  Singh, G. C.  John, “Effective component for the size dependance of luminescence in semiconductor nanocrystallites,” Phys. Rev. 58, 1158 (1998).
    [CrossRef]
  3. J.  Zeman, M.  Zigone, G.  Martinez, G.  Rikken, P.  Bordet, J.  Chenavas, “On the origin of the porous-silicon luminescence,” Thin Solid Films 255, Nos. 1–2, 35 (1995).
    [CrossRef]
  4. G.  Amato, L.  Boarino, N.  Brunetto, A. M.  Rossi, A.  Parisini, “Investigation of the nonradiative processes in porous silicon,” Thin Solid Films 276, Nos. 1–2, 51 (1996).
    [CrossRef]
  5. M.  Cruz, M. R.  Beltran, C.  Wang, J.  Taguena-Martinez, “Quasi-confinement, localization and optical properties of porous silicon,” Thin Solid Films 297, Nos. 1–2, 261 (1997).
    [CrossRef]
  6. D.  Dimova-Malinovska, M.  Sendova-Vassileva, T.  Marinova, V.  Krastev, M.  Kamenova, N.  Tzenov, “Correlation between the photoluminescence and chemical bonding in porous silicon,” Thin Solid Films 255, Nos. 1–2, 191 (1995).
    [CrossRef]
  7. H.  Tamura, M.  Rückschloss, T.  Wirschem, S.  Veprek, “On the possible origin of the photoluminescence from oxidized nanocrystalline silicon,” Thin Solid Films 255, Nos. 1–2, 92 (1995).
    [CrossRef]
  8. P.  Deák, Z.  Hajnal, J.  Miró, “Recombination with larger than band-gap energy at centres on the surface of silicon microstructures,” Thin Solid Films 276, Nos. 1–2, 290 (1996).
    [CrossRef]
  9. S.  Delerue, G.  Allan, M.  Lannoo, “Optical band gap of Si nanoclusters,” J. Lumin. 80, Nos. 1–4, 65 (1998).
    [CrossRef]
  10. L.  Peter, D.  Riley, R.  Wielgosz, P.  Snow, R.  Penty, I.  White, E.  Meulenkamp, “Mechanisms of luminescence tuning and quenching in porous silicon,” Thin Solid Films 276, No. 1–2, 123 (1996).
    [CrossRef]
  11. P.  Galiy, T.  Lesiv, L.  Monastyrskii, T.  Nenchuk, I.  Olenych, “Surface investigations of nanostructured porous silicon,” Thin Solid Films 318, Nos. 1–2, 113 (1998).
    [CrossRef]
  12. L.  Dorigoni, O.  Bisi, F.  Bernardini, S.  Ossicini, “The luminescence transition in porous silicon: The nature of the electronic states,” Thin Solid Films 276, Nos. 1–2, 261 (1996).
    [CrossRef]
  13. M.  Schoisswohl, H.  Bardeleben, V.  Bratus, H.  Münder, “Defects in luminescent and nonluminescent porous Si,” Thin Solid Films 255, Nos. 1–2, 163 (1995).
    [CrossRef]
  14. K. S.  Zhuravlev, A. Yu.  Kobitski?, “Recombination of self-trapped excitons in silicon nanocrystals grown in silicon oxide,” Fiz. Tekh. Poluprovodn. 34, 1254 (2001) [Semiconductors 34, 1203 (2001)].
  15. D. T.  Yan, “How laser excitation affects the photoluminescence of anodized porous silicon,” Opt. Zh. 77, No. 8, 67 (2010) [J. Opt. Technol. 77, 515 (2010)].

2010

D. T.  Yan, “How laser excitation affects the photoluminescence of anodized porous silicon,” Opt. Zh. 77, No. 8, 67 (2010) [J. Opt. Technol. 77, 515 (2010)].

2001

K. S.  Zhuravlev, A. Yu.  Kobitski?, “Recombination of self-trapped excitons in silicon nanocrystals grown in silicon oxide,” Fiz. Tekh. Poluprovodn. 34, 1254 (2001) [Semiconductors 34, 1203 (2001)].

1998

P.  Galiy, T.  Lesiv, L.  Monastyrskii, T.  Nenchuk, I.  Olenych, “Surface investigations of nanostructured porous silicon,” Thin Solid Films 318, Nos. 1–2, 113 (1998).
[CrossRef]

V.  Ranjan, V. A.  Singh, G. C.  John, “Effective component for the size dependance of luminescence in semiconductor nanocrystallites,” Phys. Rev. 58, 1158 (1998).
[CrossRef]

S.  Delerue, G.  Allan, M.  Lannoo, “Optical band gap of Si nanoclusters,” J. Lumin. 80, Nos. 1–4, 65 (1998).
[CrossRef]

1997

M.  Cruz, M. R.  Beltran, C.  Wang, J.  Taguena-Martinez, “Quasi-confinement, localization and optical properties of porous silicon,” Thin Solid Films 297, Nos. 1–2, 261 (1997).
[CrossRef]

1996

L.  Peter, D.  Riley, R.  Wielgosz, P.  Snow, R.  Penty, I.  White, E.  Meulenkamp, “Mechanisms of luminescence tuning and quenching in porous silicon,” Thin Solid Films 276, No. 1–2, 123 (1996).
[CrossRef]

G.  Amato, L.  Boarino, N.  Brunetto, A. M.  Rossi, A.  Parisini, “Investigation of the nonradiative processes in porous silicon,” Thin Solid Films 276, Nos. 1–2, 51 (1996).
[CrossRef]

L.  Dorigoni, O.  Bisi, F.  Bernardini, S.  Ossicini, “The luminescence transition in porous silicon: The nature of the electronic states,” Thin Solid Films 276, Nos. 1–2, 261 (1996).
[CrossRef]

P.  Deák, Z.  Hajnal, J.  Miró, “Recombination with larger than band-gap energy at centres on the surface of silicon microstructures,” Thin Solid Films 276, Nos. 1–2, 290 (1996).
[CrossRef]

1995

M.  Schoisswohl, H.  Bardeleben, V.  Bratus, H.  Münder, “Defects in luminescent and nonluminescent porous Si,” Thin Solid Films 255, Nos. 1–2, 163 (1995).
[CrossRef]

J.  Zeman, M.  Zigone, G.  Martinez, G.  Rikken, P.  Bordet, J.  Chenavas, “On the origin of the porous-silicon luminescence,” Thin Solid Films 255, Nos. 1–2, 35 (1995).
[CrossRef]

D.  Dimova-Malinovska, M.  Sendova-Vassileva, T.  Marinova, V.  Krastev, M.  Kamenova, N.  Tzenov, “Correlation between the photoluminescence and chemical bonding in porous silicon,” Thin Solid Films 255, Nos. 1–2, 191 (1995).
[CrossRef]

H.  Tamura, M.  Rückschloss, T.  Wirschem, S.  Veprek, “On the possible origin of the photoluminescence from oxidized nanocrystalline silicon,” Thin Solid Films 255, Nos. 1–2, 92 (1995).
[CrossRef]

1990

L. T.  Canham, “Visible photoluminescence of porous Si,” Appl. Phys. Lett. 57, 1046 (1990).
[CrossRef]

Allan, G.

S.  Delerue, G.  Allan, M.  Lannoo, “Optical band gap of Si nanoclusters,” J. Lumin. 80, Nos. 1–4, 65 (1998).
[CrossRef]

Amato, G.

G.  Amato, L.  Boarino, N.  Brunetto, A. M.  Rossi, A.  Parisini, “Investigation of the nonradiative processes in porous silicon,” Thin Solid Films 276, Nos. 1–2, 51 (1996).
[CrossRef]

Bardeleben, H.

M.  Schoisswohl, H.  Bardeleben, V.  Bratus, H.  Münder, “Defects in luminescent and nonluminescent porous Si,” Thin Solid Films 255, Nos. 1–2, 163 (1995).
[CrossRef]

Beltran, M. R.

M.  Cruz, M. R.  Beltran, C.  Wang, J.  Taguena-Martinez, “Quasi-confinement, localization and optical properties of porous silicon,” Thin Solid Films 297, Nos. 1–2, 261 (1997).
[CrossRef]

Bernardini, F.

L.  Dorigoni, O.  Bisi, F.  Bernardini, S.  Ossicini, “The luminescence transition in porous silicon: The nature of the electronic states,” Thin Solid Films 276, Nos. 1–2, 261 (1996).
[CrossRef]

Bisi, O.

L.  Dorigoni, O.  Bisi, F.  Bernardini, S.  Ossicini, “The luminescence transition in porous silicon: The nature of the electronic states,” Thin Solid Films 276, Nos. 1–2, 261 (1996).
[CrossRef]

Boarino, L.

G.  Amato, L.  Boarino, N.  Brunetto, A. M.  Rossi, A.  Parisini, “Investigation of the nonradiative processes in porous silicon,” Thin Solid Films 276, Nos. 1–2, 51 (1996).
[CrossRef]

Bordet, P.

J.  Zeman, M.  Zigone, G.  Martinez, G.  Rikken, P.  Bordet, J.  Chenavas, “On the origin of the porous-silicon luminescence,” Thin Solid Films 255, Nos. 1–2, 35 (1995).
[CrossRef]

Bratus, V.

M.  Schoisswohl, H.  Bardeleben, V.  Bratus, H.  Münder, “Defects in luminescent and nonluminescent porous Si,” Thin Solid Films 255, Nos. 1–2, 163 (1995).
[CrossRef]

Brunetto, N.

G.  Amato, L.  Boarino, N.  Brunetto, A. M.  Rossi, A.  Parisini, “Investigation of the nonradiative processes in porous silicon,” Thin Solid Films 276, Nos. 1–2, 51 (1996).
[CrossRef]

Canham, L. T.

L. T.  Canham, “Visible photoluminescence of porous Si,” Appl. Phys. Lett. 57, 1046 (1990).
[CrossRef]

Chenavas, J.

J.  Zeman, M.  Zigone, G.  Martinez, G.  Rikken, P.  Bordet, J.  Chenavas, “On the origin of the porous-silicon luminescence,” Thin Solid Films 255, Nos. 1–2, 35 (1995).
[CrossRef]

Cruz, M.

M.  Cruz, M. R.  Beltran, C.  Wang, J.  Taguena-Martinez, “Quasi-confinement, localization and optical properties of porous silicon,” Thin Solid Films 297, Nos. 1–2, 261 (1997).
[CrossRef]

Deák, P.

P.  Deák, Z.  Hajnal, J.  Miró, “Recombination with larger than band-gap energy at centres on the surface of silicon microstructures,” Thin Solid Films 276, Nos. 1–2, 290 (1996).
[CrossRef]

Delerue, S.

S.  Delerue, G.  Allan, M.  Lannoo, “Optical band gap of Si nanoclusters,” J. Lumin. 80, Nos. 1–4, 65 (1998).
[CrossRef]

Dimova-Malinovska, D.

D.  Dimova-Malinovska, M.  Sendova-Vassileva, T.  Marinova, V.  Krastev, M.  Kamenova, N.  Tzenov, “Correlation between the photoluminescence and chemical bonding in porous silicon,” Thin Solid Films 255, Nos. 1–2, 191 (1995).
[CrossRef]

Dorigoni, L.

L.  Dorigoni, O.  Bisi, F.  Bernardini, S.  Ossicini, “The luminescence transition in porous silicon: The nature of the electronic states,” Thin Solid Films 276, Nos. 1–2, 261 (1996).
[CrossRef]

Galiy, P.

P.  Galiy, T.  Lesiv, L.  Monastyrskii, T.  Nenchuk, I.  Olenych, “Surface investigations of nanostructured porous silicon,” Thin Solid Films 318, Nos. 1–2, 113 (1998).
[CrossRef]

Hajnal, Z.

P.  Deák, Z.  Hajnal, J.  Miró, “Recombination with larger than band-gap energy at centres on the surface of silicon microstructures,” Thin Solid Films 276, Nos. 1–2, 290 (1996).
[CrossRef]

John, G. C.

V.  Ranjan, V. A.  Singh, G. C.  John, “Effective component for the size dependance of luminescence in semiconductor nanocrystallites,” Phys. Rev. 58, 1158 (1998).
[CrossRef]

Kamenova, M.

D.  Dimova-Malinovska, M.  Sendova-Vassileva, T.  Marinova, V.  Krastev, M.  Kamenova, N.  Tzenov, “Correlation between the photoluminescence and chemical bonding in porous silicon,” Thin Solid Films 255, Nos. 1–2, 191 (1995).
[CrossRef]

Kobitskii, A. Yu.

K. S.  Zhuravlev, A. Yu.  Kobitski?, “Recombination of self-trapped excitons in silicon nanocrystals grown in silicon oxide,” Fiz. Tekh. Poluprovodn. 34, 1254 (2001) [Semiconductors 34, 1203 (2001)].

Krastev, V.

D.  Dimova-Malinovska, M.  Sendova-Vassileva, T.  Marinova, V.  Krastev, M.  Kamenova, N.  Tzenov, “Correlation between the photoluminescence and chemical bonding in porous silicon,” Thin Solid Films 255, Nos. 1–2, 191 (1995).
[CrossRef]

Lannoo, M.

S.  Delerue, G.  Allan, M.  Lannoo, “Optical band gap of Si nanoclusters,” J. Lumin. 80, Nos. 1–4, 65 (1998).
[CrossRef]

Lesiv, T.

P.  Galiy, T.  Lesiv, L.  Monastyrskii, T.  Nenchuk, I.  Olenych, “Surface investigations of nanostructured porous silicon,” Thin Solid Films 318, Nos. 1–2, 113 (1998).
[CrossRef]

Marinova, T.

D.  Dimova-Malinovska, M.  Sendova-Vassileva, T.  Marinova, V.  Krastev, M.  Kamenova, N.  Tzenov, “Correlation between the photoluminescence and chemical bonding in porous silicon,” Thin Solid Films 255, Nos. 1–2, 191 (1995).
[CrossRef]

Martinez, G.

J.  Zeman, M.  Zigone, G.  Martinez, G.  Rikken, P.  Bordet, J.  Chenavas, “On the origin of the porous-silicon luminescence,” Thin Solid Films 255, Nos. 1–2, 35 (1995).
[CrossRef]

Meulenkamp, E.

L.  Peter, D.  Riley, R.  Wielgosz, P.  Snow, R.  Penty, I.  White, E.  Meulenkamp, “Mechanisms of luminescence tuning and quenching in porous silicon,” Thin Solid Films 276, No. 1–2, 123 (1996).
[CrossRef]

Miró, J.

P.  Deák, Z.  Hajnal, J.  Miró, “Recombination with larger than band-gap energy at centres on the surface of silicon microstructures,” Thin Solid Films 276, Nos. 1–2, 290 (1996).
[CrossRef]

Monastyrskii, L.

P.  Galiy, T.  Lesiv, L.  Monastyrskii, T.  Nenchuk, I.  Olenych, “Surface investigations of nanostructured porous silicon,” Thin Solid Films 318, Nos. 1–2, 113 (1998).
[CrossRef]

Münder, H.

M.  Schoisswohl, H.  Bardeleben, V.  Bratus, H.  Münder, “Defects in luminescent and nonluminescent porous Si,” Thin Solid Films 255, Nos. 1–2, 163 (1995).
[CrossRef]

Nenchuk, T.

P.  Galiy, T.  Lesiv, L.  Monastyrskii, T.  Nenchuk, I.  Olenych, “Surface investigations of nanostructured porous silicon,” Thin Solid Films 318, Nos. 1–2, 113 (1998).
[CrossRef]

Olenych, I.

P.  Galiy, T.  Lesiv, L.  Monastyrskii, T.  Nenchuk, I.  Olenych, “Surface investigations of nanostructured porous silicon,” Thin Solid Films 318, Nos. 1–2, 113 (1998).
[CrossRef]

Ossicini, S.

L.  Dorigoni, O.  Bisi, F.  Bernardini, S.  Ossicini, “The luminescence transition in porous silicon: The nature of the electronic states,” Thin Solid Films 276, Nos. 1–2, 261 (1996).
[CrossRef]

Parisini, A.

G.  Amato, L.  Boarino, N.  Brunetto, A. M.  Rossi, A.  Parisini, “Investigation of the nonradiative processes in porous silicon,” Thin Solid Films 276, Nos. 1–2, 51 (1996).
[CrossRef]

Penty, R.

L.  Peter, D.  Riley, R.  Wielgosz, P.  Snow, R.  Penty, I.  White, E.  Meulenkamp, “Mechanisms of luminescence tuning and quenching in porous silicon,” Thin Solid Films 276, No. 1–2, 123 (1996).
[CrossRef]

Peter, L.

L.  Peter, D.  Riley, R.  Wielgosz, P.  Snow, R.  Penty, I.  White, E.  Meulenkamp, “Mechanisms of luminescence tuning and quenching in porous silicon,” Thin Solid Films 276, No. 1–2, 123 (1996).
[CrossRef]

Ranjan, V.

V.  Ranjan, V. A.  Singh, G. C.  John, “Effective component for the size dependance of luminescence in semiconductor nanocrystallites,” Phys. Rev. 58, 1158 (1998).
[CrossRef]

Rikken, G.

J.  Zeman, M.  Zigone, G.  Martinez, G.  Rikken, P.  Bordet, J.  Chenavas, “On the origin of the porous-silicon luminescence,” Thin Solid Films 255, Nos. 1–2, 35 (1995).
[CrossRef]

Riley, D.

L.  Peter, D.  Riley, R.  Wielgosz, P.  Snow, R.  Penty, I.  White, E.  Meulenkamp, “Mechanisms of luminescence tuning and quenching in porous silicon,” Thin Solid Films 276, No. 1–2, 123 (1996).
[CrossRef]

Rossi, A. M.

G.  Amato, L.  Boarino, N.  Brunetto, A. M.  Rossi, A.  Parisini, “Investigation of the nonradiative processes in porous silicon,” Thin Solid Films 276, Nos. 1–2, 51 (1996).
[CrossRef]

Rückschloss, M.

H.  Tamura, M.  Rückschloss, T.  Wirschem, S.  Veprek, “On the possible origin of the photoluminescence from oxidized nanocrystalline silicon,” Thin Solid Films 255, Nos. 1–2, 92 (1995).
[CrossRef]

Schoisswohl, M.

M.  Schoisswohl, H.  Bardeleben, V.  Bratus, H.  Münder, “Defects in luminescent and nonluminescent porous Si,” Thin Solid Films 255, Nos. 1–2, 163 (1995).
[CrossRef]

Sendova-Vassileva, M.

D.  Dimova-Malinovska, M.  Sendova-Vassileva, T.  Marinova, V.  Krastev, M.  Kamenova, N.  Tzenov, “Correlation between the photoluminescence and chemical bonding in porous silicon,” Thin Solid Films 255, Nos. 1–2, 191 (1995).
[CrossRef]

Singh, V. A.

V.  Ranjan, V. A.  Singh, G. C.  John, “Effective component for the size dependance of luminescence in semiconductor nanocrystallites,” Phys. Rev. 58, 1158 (1998).
[CrossRef]

Snow, P.

L.  Peter, D.  Riley, R.  Wielgosz, P.  Snow, R.  Penty, I.  White, E.  Meulenkamp, “Mechanisms of luminescence tuning and quenching in porous silicon,” Thin Solid Films 276, No. 1–2, 123 (1996).
[CrossRef]

Taguena-Martinez, J.

M.  Cruz, M. R.  Beltran, C.  Wang, J.  Taguena-Martinez, “Quasi-confinement, localization and optical properties of porous silicon,” Thin Solid Films 297, Nos. 1–2, 261 (1997).
[CrossRef]

Tamura, H.

H.  Tamura, M.  Rückschloss, T.  Wirschem, S.  Veprek, “On the possible origin of the photoluminescence from oxidized nanocrystalline silicon,” Thin Solid Films 255, Nos. 1–2, 92 (1995).
[CrossRef]

Tzenov, N.

D.  Dimova-Malinovska, M.  Sendova-Vassileva, T.  Marinova, V.  Krastev, M.  Kamenova, N.  Tzenov, “Correlation between the photoluminescence and chemical bonding in porous silicon,” Thin Solid Films 255, Nos. 1–2, 191 (1995).
[CrossRef]

Veprek, S.

H.  Tamura, M.  Rückschloss, T.  Wirschem, S.  Veprek, “On the possible origin of the photoluminescence from oxidized nanocrystalline silicon,” Thin Solid Films 255, Nos. 1–2, 92 (1995).
[CrossRef]

Wang, C.

M.  Cruz, M. R.  Beltran, C.  Wang, J.  Taguena-Martinez, “Quasi-confinement, localization and optical properties of porous silicon,” Thin Solid Films 297, Nos. 1–2, 261 (1997).
[CrossRef]

White, I.

L.  Peter, D.  Riley, R.  Wielgosz, P.  Snow, R.  Penty, I.  White, E.  Meulenkamp, “Mechanisms of luminescence tuning and quenching in porous silicon,” Thin Solid Films 276, No. 1–2, 123 (1996).
[CrossRef]

Wielgosz, R.

L.  Peter, D.  Riley, R.  Wielgosz, P.  Snow, R.  Penty, I.  White, E.  Meulenkamp, “Mechanisms of luminescence tuning and quenching in porous silicon,” Thin Solid Films 276, No. 1–2, 123 (1996).
[CrossRef]

Wirschem, T.

H.  Tamura, M.  Rückschloss, T.  Wirschem, S.  Veprek, “On the possible origin of the photoluminescence from oxidized nanocrystalline silicon,” Thin Solid Films 255, Nos. 1–2, 92 (1995).
[CrossRef]

Yan, D. T.

D. T.  Yan, “How laser excitation affects the photoluminescence of anodized porous silicon,” Opt. Zh. 77, No. 8, 67 (2010) [J. Opt. Technol. 77, 515 (2010)].

Zeman, J.

J.  Zeman, M.  Zigone, G.  Martinez, G.  Rikken, P.  Bordet, J.  Chenavas, “On the origin of the porous-silicon luminescence,” Thin Solid Films 255, Nos. 1–2, 35 (1995).
[CrossRef]

Zhuravlev, K. S.

K. S.  Zhuravlev, A. Yu.  Kobitski?, “Recombination of self-trapped excitons in silicon nanocrystals grown in silicon oxide,” Fiz. Tekh. Poluprovodn. 34, 1254 (2001) [Semiconductors 34, 1203 (2001)].

Zigone, M.

J.  Zeman, M.  Zigone, G.  Martinez, G.  Rikken, P.  Bordet, J.  Chenavas, “On the origin of the porous-silicon luminescence,” Thin Solid Films 255, Nos. 1–2, 35 (1995).
[CrossRef]

Appl. Phys. Lett.

L. T.  Canham, “Visible photoluminescence of porous Si,” Appl. Phys. Lett. 57, 1046 (1990).
[CrossRef]

Fiz. Tekh. Poluprovodn.

K. S.  Zhuravlev, A. Yu.  Kobitski?, “Recombination of self-trapped excitons in silicon nanocrystals grown in silicon oxide,” Fiz. Tekh. Poluprovodn. 34, 1254 (2001) [Semiconductors 34, 1203 (2001)].

J. Lumin.

S.  Delerue, G.  Allan, M.  Lannoo, “Optical band gap of Si nanoclusters,” J. Lumin. 80, Nos. 1–4, 65 (1998).
[CrossRef]

Opt. Zh.

D. T.  Yan, “How laser excitation affects the photoluminescence of anodized porous silicon,” Opt. Zh. 77, No. 8, 67 (2010) [J. Opt. Technol. 77, 515 (2010)].

Phys. Rev.

V.  Ranjan, V. A.  Singh, G. C.  John, “Effective component for the size dependance of luminescence in semiconductor nanocrystallites,” Phys. Rev. 58, 1158 (1998).
[CrossRef]

Thin Solid Films

J.  Zeman, M.  Zigone, G.  Martinez, G.  Rikken, P.  Bordet, J.  Chenavas, “On the origin of the porous-silicon luminescence,” Thin Solid Films 255, Nos. 1–2, 35 (1995).
[CrossRef]

G.  Amato, L.  Boarino, N.  Brunetto, A. M.  Rossi, A.  Parisini, “Investigation of the nonradiative processes in porous silicon,” Thin Solid Films 276, Nos. 1–2, 51 (1996).
[CrossRef]

M.  Cruz, M. R.  Beltran, C.  Wang, J.  Taguena-Martinez, “Quasi-confinement, localization and optical properties of porous silicon,” Thin Solid Films 297, Nos. 1–2, 261 (1997).
[CrossRef]

D.  Dimova-Malinovska, M.  Sendova-Vassileva, T.  Marinova, V.  Krastev, M.  Kamenova, N.  Tzenov, “Correlation between the photoluminescence and chemical bonding in porous silicon,” Thin Solid Films 255, Nos. 1–2, 191 (1995).
[CrossRef]

H.  Tamura, M.  Rückschloss, T.  Wirschem, S.  Veprek, “On the possible origin of the photoluminescence from oxidized nanocrystalline silicon,” Thin Solid Films 255, Nos. 1–2, 92 (1995).
[CrossRef]

P.  Deák, Z.  Hajnal, J.  Miró, “Recombination with larger than band-gap energy at centres on the surface of silicon microstructures,” Thin Solid Films 276, Nos. 1–2, 290 (1996).
[CrossRef]

L.  Peter, D.  Riley, R.  Wielgosz, P.  Snow, R.  Penty, I.  White, E.  Meulenkamp, “Mechanisms of luminescence tuning and quenching in porous silicon,” Thin Solid Films 276, No. 1–2, 123 (1996).
[CrossRef]

P.  Galiy, T.  Lesiv, L.  Monastyrskii, T.  Nenchuk, I.  Olenych, “Surface investigations of nanostructured porous silicon,” Thin Solid Films 318, Nos. 1–2, 113 (1998).
[CrossRef]

L.  Dorigoni, O.  Bisi, F.  Bernardini, S.  Ossicini, “The luminescence transition in porous silicon: The nature of the electronic states,” Thin Solid Films 276, Nos. 1–2, 261 (1996).
[CrossRef]

M.  Schoisswohl, H.  Bardeleben, V.  Bratus, H.  Münder, “Defects in luminescent and nonluminescent porous Si,” Thin Solid Films 255, Nos. 1–2, 163 (1995).
[CrossRef]

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