Abstract

This paper shows that implementing a system for the reception and detection of submillimeter radiation on the basis of open planar microresonance structures in the form of apodized dielectric gratings with a fill factor that varies according to a linear law, connected through an impedance transformer with a low-barrier zero-bias Schottky detector diode, makes it possible to achieve• losses to reflection of −26.5 dB,• a standing-wave factor of 1.1,• conversion efficiency 98.6%, with an NEP of 8.05×10<sup>−12</sup>WHz<sup>−1/2</sup>.

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  1. K. V. Marem’yanin, D. M. Ermolaev, D. V. Fateev, S. V. Morozov, N. A. Maleev, V. E. Zemlyakov, V. I. Gavrilenko, V. V. Popov, and S. Yu. Shapoval, “Wide-aperture detector of terahertz radiation based on GaAs/InGaAs transistor structure with large-area slit grating gate,” Pis’ma Zh. Tekh. Fiz. 36, No. 8, 39 (2010). [Tech. Phys. Lett. 36, 365 (2010)].
  2. N. Momot, V. Zabudsky, Z. Tsybrii, M. Apats’ka, M. Smoliy, and N. Dmytruk, “Zero-bias terahertz and subterahertz detector operating at room temperature,” Semicond. Phys. Quantum Electron. Optoelectron. 13, 166 (2010).
  3. R. Han, Y. Zhang, D. Coquillat, J. Hoy, H. Videlier, W. Knap, E. Brown, and K. O. Kenneth, “280-GHz Schottky diode detector in 130-nm digital CMOS,” in 2010 IEEE Custom Integrated Circuits Conference, San Jose, California, USA, 2010, pp. 619–623.
  4. E. Giovine, R. Casini, D. Dominijanni, A. Notargiacomo, M. Ortolani, and V. Foglietti, “Fabrication of Schottky diodes for terahertz imaging,” Microelectron. Eng. 88, 2544 (2011).
    [CrossRef]
  5. F. G. Gonzalez and G. D. Boreman, “Comparison of dipole, bow-tie, spiral and log-periodic IR antennas,” Infrared Phys. Technol. 46, 418 (2005).
    [CrossRef]
  6. A. K. Esman, V. K. Kuleshov, and G. L. Zykov, “Detecting antenna for the terahertz range,” Belarus Republic Patent for useful model No. 7220 (2011).
  7. HFSS v12.0 User Manual Pittsburgh, Penn.: Ansoft Corporation, 2009.
  8. S. E. Bankov and A. A. Kurushin, Designing Antennas and Microwave Structures by means of HFSS Ansoft (ZAO NPP Rodnik, Moscow, 2009).
  9. C. Sydlo, O. Cojocari, D. Schonherr, T. Goebel, P. Meissner, and H. L. Hartnagel, “Fast THz detectors based on InGaAs Schottky diodes,” Frequenz 62, No. 5–6, 107 (2008).
    [CrossRef]
  10. V. I. Shashkin, Y. A. Drjagin, V. R. Zakamov, S. V. Krivov, L. M. Kukin, A. V. Murel, and Y. I. Chechenin, “Millimeter-wave detectors based on antenna-coupled low-barrier Schottky diodes,” Int. J. Infrared Millim. Waves 28, 945 (2007).
    [CrossRef]

2011 (1)

E. Giovine, R. Casini, D. Dominijanni, A. Notargiacomo, M. Ortolani, and V. Foglietti, “Fabrication of Schottky diodes for terahertz imaging,” Microelectron. Eng. 88, 2544 (2011).
[CrossRef]

2010 (2)

K. V. Marem’yanin, D. M. Ermolaev, D. V. Fateev, S. V. Morozov, N. A. Maleev, V. E. Zemlyakov, V. I. Gavrilenko, V. V. Popov, and S. Yu. Shapoval, “Wide-aperture detector of terahertz radiation based on GaAs/InGaAs transistor structure with large-area slit grating gate,” Pis’ma Zh. Tekh. Fiz. 36, No. 8, 39 (2010). [Tech. Phys. Lett. 36, 365 (2010)].

N. Momot, V. Zabudsky, Z. Tsybrii, M. Apats’ka, M. Smoliy, and N. Dmytruk, “Zero-bias terahertz and subterahertz detector operating at room temperature,” Semicond. Phys. Quantum Electron. Optoelectron. 13, 166 (2010).

2008 (1)

C. Sydlo, O. Cojocari, D. Schonherr, T. Goebel, P. Meissner, and H. L. Hartnagel, “Fast THz detectors based on InGaAs Schottky diodes,” Frequenz 62, No. 5–6, 107 (2008).
[CrossRef]

2007 (1)

V. I. Shashkin, Y. A. Drjagin, V. R. Zakamov, S. V. Krivov, L. M. Kukin, A. V. Murel, and Y. I. Chechenin, “Millimeter-wave detectors based on antenna-coupled low-barrier Schottky diodes,” Int. J. Infrared Millim. Waves 28, 945 (2007).
[CrossRef]

2005 (1)

F. G. Gonzalez and G. D. Boreman, “Comparison of dipole, bow-tie, spiral and log-periodic IR antennas,” Infrared Phys. Technol. 46, 418 (2005).
[CrossRef]

Apats’ka, M.

N. Momot, V. Zabudsky, Z. Tsybrii, M. Apats’ka, M. Smoliy, and N. Dmytruk, “Zero-bias terahertz and subterahertz detector operating at room temperature,” Semicond. Phys. Quantum Electron. Optoelectron. 13, 166 (2010).

Bankov, S. E.

S. E. Bankov and A. A. Kurushin, Designing Antennas and Microwave Structures by means of HFSS Ansoft (ZAO NPP Rodnik, Moscow, 2009).

Boreman, G. D.

F. G. Gonzalez and G. D. Boreman, “Comparison of dipole, bow-tie, spiral and log-periodic IR antennas,” Infrared Phys. Technol. 46, 418 (2005).
[CrossRef]

Brown, E.

R. Han, Y. Zhang, D. Coquillat, J. Hoy, H. Videlier, W. Knap, E. Brown, and K. O. Kenneth, “280-GHz Schottky diode detector in 130-nm digital CMOS,” in 2010 IEEE Custom Integrated Circuits Conference, San Jose, California, USA, 2010, pp. 619–623.

Casini, R.

E. Giovine, R. Casini, D. Dominijanni, A. Notargiacomo, M. Ortolani, and V. Foglietti, “Fabrication of Schottky diodes for terahertz imaging,” Microelectron. Eng. 88, 2544 (2011).
[CrossRef]

Chechenin, Y. I.

V. I. Shashkin, Y. A. Drjagin, V. R. Zakamov, S. V. Krivov, L. M. Kukin, A. V. Murel, and Y. I. Chechenin, “Millimeter-wave detectors based on antenna-coupled low-barrier Schottky diodes,” Int. J. Infrared Millim. Waves 28, 945 (2007).
[CrossRef]

Cojocari, O.

C. Sydlo, O. Cojocari, D. Schonherr, T. Goebel, P. Meissner, and H. L. Hartnagel, “Fast THz detectors based on InGaAs Schottky diodes,” Frequenz 62, No. 5–6, 107 (2008).
[CrossRef]

Coquillat, D.

R. Han, Y. Zhang, D. Coquillat, J. Hoy, H. Videlier, W. Knap, E. Brown, and K. O. Kenneth, “280-GHz Schottky diode detector in 130-nm digital CMOS,” in 2010 IEEE Custom Integrated Circuits Conference, San Jose, California, USA, 2010, pp. 619–623.

Dmytruk, N.

N. Momot, V. Zabudsky, Z. Tsybrii, M. Apats’ka, M. Smoliy, and N. Dmytruk, “Zero-bias terahertz and subterahertz detector operating at room temperature,” Semicond. Phys. Quantum Electron. Optoelectron. 13, 166 (2010).

Dominijanni, D.

E. Giovine, R. Casini, D. Dominijanni, A. Notargiacomo, M. Ortolani, and V. Foglietti, “Fabrication of Schottky diodes for terahertz imaging,” Microelectron. Eng. 88, 2544 (2011).
[CrossRef]

Drjagin, Y. A.

V. I. Shashkin, Y. A. Drjagin, V. R. Zakamov, S. V. Krivov, L. M. Kukin, A. V. Murel, and Y. I. Chechenin, “Millimeter-wave detectors based on antenna-coupled low-barrier Schottky diodes,” Int. J. Infrared Millim. Waves 28, 945 (2007).
[CrossRef]

Ermolaev, D. M.

K. V. Marem’yanin, D. M. Ermolaev, D. V. Fateev, S. V. Morozov, N. A. Maleev, V. E. Zemlyakov, V. I. Gavrilenko, V. V. Popov, and S. Yu. Shapoval, “Wide-aperture detector of terahertz radiation based on GaAs/InGaAs transistor structure with large-area slit grating gate,” Pis’ma Zh. Tekh. Fiz. 36, No. 8, 39 (2010). [Tech. Phys. Lett. 36, 365 (2010)].

Fateev, D. V.

K. V. Marem’yanin, D. M. Ermolaev, D. V. Fateev, S. V. Morozov, N. A. Maleev, V. E. Zemlyakov, V. I. Gavrilenko, V. V. Popov, and S. Yu. Shapoval, “Wide-aperture detector of terahertz radiation based on GaAs/InGaAs transistor structure with large-area slit grating gate,” Pis’ma Zh. Tekh. Fiz. 36, No. 8, 39 (2010). [Tech. Phys. Lett. 36, 365 (2010)].

Foglietti, V.

E. Giovine, R. Casini, D. Dominijanni, A. Notargiacomo, M. Ortolani, and V. Foglietti, “Fabrication of Schottky diodes for terahertz imaging,” Microelectron. Eng. 88, 2544 (2011).
[CrossRef]

Gavrilenko, V. I.

K. V. Marem’yanin, D. M. Ermolaev, D. V. Fateev, S. V. Morozov, N. A. Maleev, V. E. Zemlyakov, V. I. Gavrilenko, V. V. Popov, and S. Yu. Shapoval, “Wide-aperture detector of terahertz radiation based on GaAs/InGaAs transistor structure with large-area slit grating gate,” Pis’ma Zh. Tekh. Fiz. 36, No. 8, 39 (2010). [Tech. Phys. Lett. 36, 365 (2010)].

Giovine, E.

E. Giovine, R. Casini, D. Dominijanni, A. Notargiacomo, M. Ortolani, and V. Foglietti, “Fabrication of Schottky diodes for terahertz imaging,” Microelectron. Eng. 88, 2544 (2011).
[CrossRef]

Goebel, T.

C. Sydlo, O. Cojocari, D. Schonherr, T. Goebel, P. Meissner, and H. L. Hartnagel, “Fast THz detectors based on InGaAs Schottky diodes,” Frequenz 62, No. 5–6, 107 (2008).
[CrossRef]

Gonzalez, F. G.

F. G. Gonzalez and G. D. Boreman, “Comparison of dipole, bow-tie, spiral and log-periodic IR antennas,” Infrared Phys. Technol. 46, 418 (2005).
[CrossRef]

Han, R.

R. Han, Y. Zhang, D. Coquillat, J. Hoy, H. Videlier, W. Knap, E. Brown, and K. O. Kenneth, “280-GHz Schottky diode detector in 130-nm digital CMOS,” in 2010 IEEE Custom Integrated Circuits Conference, San Jose, California, USA, 2010, pp. 619–623.

Hartnagel, H. L.

C. Sydlo, O. Cojocari, D. Schonherr, T. Goebel, P. Meissner, and H. L. Hartnagel, “Fast THz detectors based on InGaAs Schottky diodes,” Frequenz 62, No. 5–6, 107 (2008).
[CrossRef]

Hoy, J.

R. Han, Y. Zhang, D. Coquillat, J. Hoy, H. Videlier, W. Knap, E. Brown, and K. O. Kenneth, “280-GHz Schottky diode detector in 130-nm digital CMOS,” in 2010 IEEE Custom Integrated Circuits Conference, San Jose, California, USA, 2010, pp. 619–623.

Kenneth, K. O.

R. Han, Y. Zhang, D. Coquillat, J. Hoy, H. Videlier, W. Knap, E. Brown, and K. O. Kenneth, “280-GHz Schottky diode detector in 130-nm digital CMOS,” in 2010 IEEE Custom Integrated Circuits Conference, San Jose, California, USA, 2010, pp. 619–623.

Knap, W.

R. Han, Y. Zhang, D. Coquillat, J. Hoy, H. Videlier, W. Knap, E. Brown, and K. O. Kenneth, “280-GHz Schottky diode detector in 130-nm digital CMOS,” in 2010 IEEE Custom Integrated Circuits Conference, San Jose, California, USA, 2010, pp. 619–623.

Krivov, S. V.

V. I. Shashkin, Y. A. Drjagin, V. R. Zakamov, S. V. Krivov, L. M. Kukin, A. V. Murel, and Y. I. Chechenin, “Millimeter-wave detectors based on antenna-coupled low-barrier Schottky diodes,” Int. J. Infrared Millim. Waves 28, 945 (2007).
[CrossRef]

Kukin, L. M.

V. I. Shashkin, Y. A. Drjagin, V. R. Zakamov, S. V. Krivov, L. M. Kukin, A. V. Murel, and Y. I. Chechenin, “Millimeter-wave detectors based on antenna-coupled low-barrier Schottky diodes,” Int. J. Infrared Millim. Waves 28, 945 (2007).
[CrossRef]

Kurushin, A. A.

S. E. Bankov and A. A. Kurushin, Designing Antennas and Microwave Structures by means of HFSS Ansoft (ZAO NPP Rodnik, Moscow, 2009).

Maleev, N. A.

K. V. Marem’yanin, D. M. Ermolaev, D. V. Fateev, S. V. Morozov, N. A. Maleev, V. E. Zemlyakov, V. I. Gavrilenko, V. V. Popov, and S. Yu. Shapoval, “Wide-aperture detector of terahertz radiation based on GaAs/InGaAs transistor structure with large-area slit grating gate,” Pis’ma Zh. Tekh. Fiz. 36, No. 8, 39 (2010). [Tech. Phys. Lett. 36, 365 (2010)].

Marem’yanin, K. V.

K. V. Marem’yanin, D. M. Ermolaev, D. V. Fateev, S. V. Morozov, N. A. Maleev, V. E. Zemlyakov, V. I. Gavrilenko, V. V. Popov, and S. Yu. Shapoval, “Wide-aperture detector of terahertz radiation based on GaAs/InGaAs transistor structure with large-area slit grating gate,” Pis’ma Zh. Tekh. Fiz. 36, No. 8, 39 (2010). [Tech. Phys. Lett. 36, 365 (2010)].

Meissner, P.

C. Sydlo, O. Cojocari, D. Schonherr, T. Goebel, P. Meissner, and H. L. Hartnagel, “Fast THz detectors based on InGaAs Schottky diodes,” Frequenz 62, No. 5–6, 107 (2008).
[CrossRef]

Momot, N.

N. Momot, V. Zabudsky, Z. Tsybrii, M. Apats’ka, M. Smoliy, and N. Dmytruk, “Zero-bias terahertz and subterahertz detector operating at room temperature,” Semicond. Phys. Quantum Electron. Optoelectron. 13, 166 (2010).

Morozov, S. V.

K. V. Marem’yanin, D. M. Ermolaev, D. V. Fateev, S. V. Morozov, N. A. Maleev, V. E. Zemlyakov, V. I. Gavrilenko, V. V. Popov, and S. Yu. Shapoval, “Wide-aperture detector of terahertz radiation based on GaAs/InGaAs transistor structure with large-area slit grating gate,” Pis’ma Zh. Tekh. Fiz. 36, No. 8, 39 (2010). [Tech. Phys. Lett. 36, 365 (2010)].

Murel, A. V.

V. I. Shashkin, Y. A. Drjagin, V. R. Zakamov, S. V. Krivov, L. M. Kukin, A. V. Murel, and Y. I. Chechenin, “Millimeter-wave detectors based on antenna-coupled low-barrier Schottky diodes,” Int. J. Infrared Millim. Waves 28, 945 (2007).
[CrossRef]

Notargiacomo, A.

E. Giovine, R. Casini, D. Dominijanni, A. Notargiacomo, M. Ortolani, and V. Foglietti, “Fabrication of Schottky diodes for terahertz imaging,” Microelectron. Eng. 88, 2544 (2011).
[CrossRef]

Ortolani, M.

E. Giovine, R. Casini, D. Dominijanni, A. Notargiacomo, M. Ortolani, and V. Foglietti, “Fabrication of Schottky diodes for terahertz imaging,” Microelectron. Eng. 88, 2544 (2011).
[CrossRef]

Popov, V. V.

K. V. Marem’yanin, D. M. Ermolaev, D. V. Fateev, S. V. Morozov, N. A. Maleev, V. E. Zemlyakov, V. I. Gavrilenko, V. V. Popov, and S. Yu. Shapoval, “Wide-aperture detector of terahertz radiation based on GaAs/InGaAs transistor structure with large-area slit grating gate,” Pis’ma Zh. Tekh. Fiz. 36, No. 8, 39 (2010). [Tech. Phys. Lett. 36, 365 (2010)].

Schonherr, D.

C. Sydlo, O. Cojocari, D. Schonherr, T. Goebel, P. Meissner, and H. L. Hartnagel, “Fast THz detectors based on InGaAs Schottky diodes,” Frequenz 62, No. 5–6, 107 (2008).
[CrossRef]

Shapoval, S. Yu.

K. V. Marem’yanin, D. M. Ermolaev, D. V. Fateev, S. V. Morozov, N. A. Maleev, V. E. Zemlyakov, V. I. Gavrilenko, V. V. Popov, and S. Yu. Shapoval, “Wide-aperture detector of terahertz radiation based on GaAs/InGaAs transistor structure with large-area slit grating gate,” Pis’ma Zh. Tekh. Fiz. 36, No. 8, 39 (2010). [Tech. Phys. Lett. 36, 365 (2010)].

Shashkin, V. I.

V. I. Shashkin, Y. A. Drjagin, V. R. Zakamov, S. V. Krivov, L. M. Kukin, A. V. Murel, and Y. I. Chechenin, “Millimeter-wave detectors based on antenna-coupled low-barrier Schottky diodes,” Int. J. Infrared Millim. Waves 28, 945 (2007).
[CrossRef]

Smoliy, M.

N. Momot, V. Zabudsky, Z. Tsybrii, M. Apats’ka, M. Smoliy, and N. Dmytruk, “Zero-bias terahertz and subterahertz detector operating at room temperature,” Semicond. Phys. Quantum Electron. Optoelectron. 13, 166 (2010).

Sydlo, C.

C. Sydlo, O. Cojocari, D. Schonherr, T. Goebel, P. Meissner, and H. L. Hartnagel, “Fast THz detectors based on InGaAs Schottky diodes,” Frequenz 62, No. 5–6, 107 (2008).
[CrossRef]

Tsybrii, Z.

N. Momot, V. Zabudsky, Z. Tsybrii, M. Apats’ka, M. Smoliy, and N. Dmytruk, “Zero-bias terahertz and subterahertz detector operating at room temperature,” Semicond. Phys. Quantum Electron. Optoelectron. 13, 166 (2010).

Videlier, H.

R. Han, Y. Zhang, D. Coquillat, J. Hoy, H. Videlier, W. Knap, E. Brown, and K. O. Kenneth, “280-GHz Schottky diode detector in 130-nm digital CMOS,” in 2010 IEEE Custom Integrated Circuits Conference, San Jose, California, USA, 2010, pp. 619–623.

Zabudsky, V.

N. Momot, V. Zabudsky, Z. Tsybrii, M. Apats’ka, M. Smoliy, and N. Dmytruk, “Zero-bias terahertz and subterahertz detector operating at room temperature,” Semicond. Phys. Quantum Electron. Optoelectron. 13, 166 (2010).

Zakamov, V. R.

V. I. Shashkin, Y. A. Drjagin, V. R. Zakamov, S. V. Krivov, L. M. Kukin, A. V. Murel, and Y. I. Chechenin, “Millimeter-wave detectors based on antenna-coupled low-barrier Schottky diodes,” Int. J. Infrared Millim. Waves 28, 945 (2007).
[CrossRef]

Zemlyakov, V. E.

K. V. Marem’yanin, D. M. Ermolaev, D. V. Fateev, S. V. Morozov, N. A. Maleev, V. E. Zemlyakov, V. I. Gavrilenko, V. V. Popov, and S. Yu. Shapoval, “Wide-aperture detector of terahertz radiation based on GaAs/InGaAs transistor structure with large-area slit grating gate,” Pis’ma Zh. Tekh. Fiz. 36, No. 8, 39 (2010). [Tech. Phys. Lett. 36, 365 (2010)].

Zhang, Y.

R. Han, Y. Zhang, D. Coquillat, J. Hoy, H. Videlier, W. Knap, E. Brown, and K. O. Kenneth, “280-GHz Schottky diode detector in 130-nm digital CMOS,” in 2010 IEEE Custom Integrated Circuits Conference, San Jose, California, USA, 2010, pp. 619–623.

Frequenz (1)

C. Sydlo, O. Cojocari, D. Schonherr, T. Goebel, P. Meissner, and H. L. Hartnagel, “Fast THz detectors based on InGaAs Schottky diodes,” Frequenz 62, No. 5–6, 107 (2008).
[CrossRef]

Infrared Phys. Technol. (1)

F. G. Gonzalez and G. D. Boreman, “Comparison of dipole, bow-tie, spiral and log-periodic IR antennas,” Infrared Phys. Technol. 46, 418 (2005).
[CrossRef]

Int. J. Infrared Millim. Waves (1)

V. I. Shashkin, Y. A. Drjagin, V. R. Zakamov, S. V. Krivov, L. M. Kukin, A. V. Murel, and Y. I. Chechenin, “Millimeter-wave detectors based on antenna-coupled low-barrier Schottky diodes,” Int. J. Infrared Millim. Waves 28, 945 (2007).
[CrossRef]

Microelectron. Eng. (1)

E. Giovine, R. Casini, D. Dominijanni, A. Notargiacomo, M. Ortolani, and V. Foglietti, “Fabrication of Schottky diodes for terahertz imaging,” Microelectron. Eng. 88, 2544 (2011).
[CrossRef]

Pis’ma Zh. Tekh. Fiz. (1)

K. V. Marem’yanin, D. M. Ermolaev, D. V. Fateev, S. V. Morozov, N. A. Maleev, V. E. Zemlyakov, V. I. Gavrilenko, V. V. Popov, and S. Yu. Shapoval, “Wide-aperture detector of terahertz radiation based on GaAs/InGaAs transistor structure with large-area slit grating gate,” Pis’ma Zh. Tekh. Fiz. 36, No. 8, 39 (2010). [Tech. Phys. Lett. 36, 365 (2010)].

Semicond. Phys. Quantum Electron. Optoelectron. (1)

N. Momot, V. Zabudsky, Z. Tsybrii, M. Apats’ka, M. Smoliy, and N. Dmytruk, “Zero-bias terahertz and subterahertz detector operating at room temperature,” Semicond. Phys. Quantum Electron. Optoelectron. 13, 166 (2010).

Other (4)

R. Han, Y. Zhang, D. Coquillat, J. Hoy, H. Videlier, W. Knap, E. Brown, and K. O. Kenneth, “280-GHz Schottky diode detector in 130-nm digital CMOS,” in 2010 IEEE Custom Integrated Circuits Conference, San Jose, California, USA, 2010, pp. 619–623.

A. K. Esman, V. K. Kuleshov, and G. L. Zykov, “Detecting antenna for the terahertz range,” Belarus Republic Patent for useful model No. 7220 (2011).

HFSS v12.0 User Manual Pittsburgh, Penn.: Ansoft Corporation, 2009.

S. E. Bankov and A. A. Kurushin, Designing Antennas and Microwave Structures by means of HFSS Ansoft (ZAO NPP Rodnik, Moscow, 2009).

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