Abstract

This paper presents a study of the optical properties of thermally oxidized nanoporous silicon in the wavenumber range 5000–400 cm<sup>−1</sup>. It is shown for the first time that thermally oxidized nanoporous silicon has two broad regions of reduced transmittance in the wavenumber range from 3720 to 3000 cm<sup>−1</sup> and five narrow zones that have their minima at the following wave numbers: 2920, 2240, 1680, 840, and 600 cm<sup>−1</sup>. The transmittance spectra of the thermally oxidized SiO<sub>2</sub>–Si structure are measured in the wavenumber range 5000–400 cm<sup>−1</sup>. It is established that the thermally oxidized SiO<sub>2</sub>–Si structure is transparent in the wavenumber range 5000–1200 cm<sup>−1</sup> and has narrow absorption peaks insignificant in magnitude at 1090 cm<sup>−1</sup> and 620 cm<sup>−1</sup>. It is shown that thermally oxidized nanoporous silicon can be used as a selectively absorbing and recording medium in the IR range.

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  1. V. E. Borisenko, S. K. Lazarouk, and J. A. Berashevich, “Electroluminescence in porous silicon at a reverse bias voltage applied to the Schottky barrier,” Fiz. Tekh. Poluprovodn. 40, 240 (2006). [Semiconductors 40, 234 (2006)].
  2. L. A. Golovan’, V. Yu. Timoshenko, and P. K. Kashkarov, “Optical properties of porous-system-based nanocomposites,” Usp. Fiz. Nauk 177, 619 (2007). [Phys.–Usp. 50, 595 (2007)].
    [CrossRef]
  3. A. G. Gullis, L. T. Canham, and P. D. J. Calcott, “The structural and luminescence properties of porous silicon,” J. Appl. Phys. 82, 909 (1997).
    [CrossRef]
  4. L. V. Grigor’ev, I. M. Grigor’ev, M. V. Zamoryanskaya, V. I. Sokolov, and L. M. Sorokin, “Transport properties of thermally oxidized porous silicon,” Pis’ma Zh. Tekh. Fiz. 32, No. 17, 33 (2006). [Tech. Phys. Lett. 32, 750 (2006)].
  5. O. Bisi, S. Ossieni, and L. Pavesi, “Porous silicon: a quantum sponge structure for silicon based optoelectronics,” Surf. Sci. Rep. 38, 1 (2000).
    [CrossRef]
  6. W. Kern, “Infrared spectroscopic method for compositional determination of vapor-deposited borosilicate glass films and results of the application,” RCA Rev. 32, 429 (1971).
  7. D. A. G. Bruggeman, “Berechnung verschiedener physikalischer Konstanten von heterogenen Substanzen,” Ann. Phys. (Leipzig) 416, 636 (1935).
    [CrossRef]
  8. D. Kovalev, H. Heckler, G. Polisski, and F. Koch, “Optical properties of Si nanocrystals,” Phys. Status Solidi B 215, 871 (1999).
    [CrossRef]
  9. M. I. Strashnikova, V. I. Vvoznyĭ, V. Ya. Reznichenko, and V. Ya. Gaĭvoronskiĭ, “Optical properties of porous silicon,” Zh. Eksp. Teor. Fiz. 120, 409 (2001). [JETP 93, 363 (2001)].

2007

L. A. Golovan’, V. Yu. Timoshenko, and P. K. Kashkarov, “Optical properties of porous-system-based nanocomposites,” Usp. Fiz. Nauk 177, 619 (2007). [Phys.–Usp. 50, 595 (2007)].
[CrossRef]

2006

V. E. Borisenko, S. K. Lazarouk, and J. A. Berashevich, “Electroluminescence in porous silicon at a reverse bias voltage applied to the Schottky barrier,” Fiz. Tekh. Poluprovodn. 40, 240 (2006). [Semiconductors 40, 234 (2006)].

L. V. Grigor’ev, I. M. Grigor’ev, M. V. Zamoryanskaya, V. I. Sokolov, and L. M. Sorokin, “Transport properties of thermally oxidized porous silicon,” Pis’ma Zh. Tekh. Fiz. 32, No. 17, 33 (2006). [Tech. Phys. Lett. 32, 750 (2006)].

2001

M. I. Strashnikova, V. I. Vvoznyĭ, V. Ya. Reznichenko, and V. Ya. Gaĭvoronskiĭ, “Optical properties of porous silicon,” Zh. Eksp. Teor. Fiz. 120, 409 (2001). [JETP 93, 363 (2001)].

2000

O. Bisi, S. Ossieni, and L. Pavesi, “Porous silicon: a quantum sponge structure for silicon based optoelectronics,” Surf. Sci. Rep. 38, 1 (2000).
[CrossRef]

1999

D. Kovalev, H. Heckler, G. Polisski, and F. Koch, “Optical properties of Si nanocrystals,” Phys. Status Solidi B 215, 871 (1999).
[CrossRef]

1997

A. G. Gullis, L. T. Canham, and P. D. J. Calcott, “The structural and luminescence properties of porous silicon,” J. Appl. Phys. 82, 909 (1997).
[CrossRef]

1971

W. Kern, “Infrared spectroscopic method for compositional determination of vapor-deposited borosilicate glass films and results of the application,” RCA Rev. 32, 429 (1971).

1935

D. A. G. Bruggeman, “Berechnung verschiedener physikalischer Konstanten von heterogenen Substanzen,” Ann. Phys. (Leipzig) 416, 636 (1935).
[CrossRef]

Berashevich, J. A.

V. E. Borisenko, S. K. Lazarouk, and J. A. Berashevich, “Electroluminescence in porous silicon at a reverse bias voltage applied to the Schottky barrier,” Fiz. Tekh. Poluprovodn. 40, 240 (2006). [Semiconductors 40, 234 (2006)].

Bisi, O.

O. Bisi, S. Ossieni, and L. Pavesi, “Porous silicon: a quantum sponge structure for silicon based optoelectronics,” Surf. Sci. Rep. 38, 1 (2000).
[CrossRef]

Borisenko, V. E.

V. E. Borisenko, S. K. Lazarouk, and J. A. Berashevich, “Electroluminescence in porous silicon at a reverse bias voltage applied to the Schottky barrier,” Fiz. Tekh. Poluprovodn. 40, 240 (2006). [Semiconductors 40, 234 (2006)].

Bruggeman, D. A. G.

D. A. G. Bruggeman, “Berechnung verschiedener physikalischer Konstanten von heterogenen Substanzen,” Ann. Phys. (Leipzig) 416, 636 (1935).
[CrossRef]

Calcott, P. D. J.

A. G. Gullis, L. T. Canham, and P. D. J. Calcott, “The structural and luminescence properties of porous silicon,” J. Appl. Phys. 82, 909 (1997).
[CrossRef]

Canham, L. T.

A. G. Gullis, L. T. Canham, and P. D. J. Calcott, “The structural and luminescence properties of porous silicon,” J. Appl. Phys. 82, 909 (1997).
[CrossRef]

Gaivoronskii, V. Ya.

M. I. Strashnikova, V. I. Vvoznyĭ, V. Ya. Reznichenko, and V. Ya. Gaĭvoronskiĭ, “Optical properties of porous silicon,” Zh. Eksp. Teor. Fiz. 120, 409 (2001). [JETP 93, 363 (2001)].

Golovan’, L. A.

L. A. Golovan’, V. Yu. Timoshenko, and P. K. Kashkarov, “Optical properties of porous-system-based nanocomposites,” Usp. Fiz. Nauk 177, 619 (2007). [Phys.–Usp. 50, 595 (2007)].
[CrossRef]

Grigor’ev, I. M.

L. V. Grigor’ev, I. M. Grigor’ev, M. V. Zamoryanskaya, V. I. Sokolov, and L. M. Sorokin, “Transport properties of thermally oxidized porous silicon,” Pis’ma Zh. Tekh. Fiz. 32, No. 17, 33 (2006). [Tech. Phys. Lett. 32, 750 (2006)].

Grigor’ev, L. V.

L. V. Grigor’ev, I. M. Grigor’ev, M. V. Zamoryanskaya, V. I. Sokolov, and L. M. Sorokin, “Transport properties of thermally oxidized porous silicon,” Pis’ma Zh. Tekh. Fiz. 32, No. 17, 33 (2006). [Tech. Phys. Lett. 32, 750 (2006)].

Gullis, A. G.

A. G. Gullis, L. T. Canham, and P. D. J. Calcott, “The structural and luminescence properties of porous silicon,” J. Appl. Phys. 82, 909 (1997).
[CrossRef]

Heckler, H.

D. Kovalev, H. Heckler, G. Polisski, and F. Koch, “Optical properties of Si nanocrystals,” Phys. Status Solidi B 215, 871 (1999).
[CrossRef]

Kashkarov, P. K.

L. A. Golovan’, V. Yu. Timoshenko, and P. K. Kashkarov, “Optical properties of porous-system-based nanocomposites,” Usp. Fiz. Nauk 177, 619 (2007). [Phys.–Usp. 50, 595 (2007)].
[CrossRef]

Kern, W.

W. Kern, “Infrared spectroscopic method for compositional determination of vapor-deposited borosilicate glass films and results of the application,” RCA Rev. 32, 429 (1971).

Koch, F.

D. Kovalev, H. Heckler, G. Polisski, and F. Koch, “Optical properties of Si nanocrystals,” Phys. Status Solidi B 215, 871 (1999).
[CrossRef]

Kovalev, D.

D. Kovalev, H. Heckler, G. Polisski, and F. Koch, “Optical properties of Si nanocrystals,” Phys. Status Solidi B 215, 871 (1999).
[CrossRef]

Lazarouk, S. K.

V. E. Borisenko, S. K. Lazarouk, and J. A. Berashevich, “Electroluminescence in porous silicon at a reverse bias voltage applied to the Schottky barrier,” Fiz. Tekh. Poluprovodn. 40, 240 (2006). [Semiconductors 40, 234 (2006)].

Ossieni, S.

O. Bisi, S. Ossieni, and L. Pavesi, “Porous silicon: a quantum sponge structure for silicon based optoelectronics,” Surf. Sci. Rep. 38, 1 (2000).
[CrossRef]

Pavesi, L.

O. Bisi, S. Ossieni, and L. Pavesi, “Porous silicon: a quantum sponge structure for silicon based optoelectronics,” Surf. Sci. Rep. 38, 1 (2000).
[CrossRef]

Polisski, G.

D. Kovalev, H. Heckler, G. Polisski, and F. Koch, “Optical properties of Si nanocrystals,” Phys. Status Solidi B 215, 871 (1999).
[CrossRef]

Reznichenko, V. Ya.

M. I. Strashnikova, V. I. Vvoznyĭ, V. Ya. Reznichenko, and V. Ya. Gaĭvoronskiĭ, “Optical properties of porous silicon,” Zh. Eksp. Teor. Fiz. 120, 409 (2001). [JETP 93, 363 (2001)].

Sokolov, V. I.

L. V. Grigor’ev, I. M. Grigor’ev, M. V. Zamoryanskaya, V. I. Sokolov, and L. M. Sorokin, “Transport properties of thermally oxidized porous silicon,” Pis’ma Zh. Tekh. Fiz. 32, No. 17, 33 (2006). [Tech. Phys. Lett. 32, 750 (2006)].

Sorokin, L. M.

L. V. Grigor’ev, I. M. Grigor’ev, M. V. Zamoryanskaya, V. I. Sokolov, and L. M. Sorokin, “Transport properties of thermally oxidized porous silicon,” Pis’ma Zh. Tekh. Fiz. 32, No. 17, 33 (2006). [Tech. Phys. Lett. 32, 750 (2006)].

Strashnikova, M. I.

M. I. Strashnikova, V. I. Vvoznyĭ, V. Ya. Reznichenko, and V. Ya. Gaĭvoronskiĭ, “Optical properties of porous silicon,” Zh. Eksp. Teor. Fiz. 120, 409 (2001). [JETP 93, 363 (2001)].

Timoshenko, V. Yu.

L. A. Golovan’, V. Yu. Timoshenko, and P. K. Kashkarov, “Optical properties of porous-system-based nanocomposites,” Usp. Fiz. Nauk 177, 619 (2007). [Phys.–Usp. 50, 595 (2007)].
[CrossRef]

Vvoznyi, V. I.

M. I. Strashnikova, V. I. Vvoznyĭ, V. Ya. Reznichenko, and V. Ya. Gaĭvoronskiĭ, “Optical properties of porous silicon,” Zh. Eksp. Teor. Fiz. 120, 409 (2001). [JETP 93, 363 (2001)].

Zamoryanskaya, M. V.

L. V. Grigor’ev, I. M. Grigor’ev, M. V. Zamoryanskaya, V. I. Sokolov, and L. M. Sorokin, “Transport properties of thermally oxidized porous silicon,” Pis’ma Zh. Tekh. Fiz. 32, No. 17, 33 (2006). [Tech. Phys. Lett. 32, 750 (2006)].

Ann. Phys. (Leipzig)

D. A. G. Bruggeman, “Berechnung verschiedener physikalischer Konstanten von heterogenen Substanzen,” Ann. Phys. (Leipzig) 416, 636 (1935).
[CrossRef]

Fiz. Tekh. Poluprovodn.

V. E. Borisenko, S. K. Lazarouk, and J. A. Berashevich, “Electroluminescence in porous silicon at a reverse bias voltage applied to the Schottky barrier,” Fiz. Tekh. Poluprovodn. 40, 240 (2006). [Semiconductors 40, 234 (2006)].

J. Appl. Phys.

A. G. Gullis, L. T. Canham, and P. D. J. Calcott, “The structural and luminescence properties of porous silicon,” J. Appl. Phys. 82, 909 (1997).
[CrossRef]

Phys. Status Solidi B

D. Kovalev, H. Heckler, G. Polisski, and F. Koch, “Optical properties of Si nanocrystals,” Phys. Status Solidi B 215, 871 (1999).
[CrossRef]

Pis’ma Zh. Tekh. Fiz.

L. V. Grigor’ev, I. M. Grigor’ev, M. V. Zamoryanskaya, V. I. Sokolov, and L. M. Sorokin, “Transport properties of thermally oxidized porous silicon,” Pis’ma Zh. Tekh. Fiz. 32, No. 17, 33 (2006). [Tech. Phys. Lett. 32, 750 (2006)].

RCA Rev.

W. Kern, “Infrared spectroscopic method for compositional determination of vapor-deposited borosilicate glass films and results of the application,” RCA Rev. 32, 429 (1971).

Surf. Sci. Rep.

O. Bisi, S. Ossieni, and L. Pavesi, “Porous silicon: a quantum sponge structure for silicon based optoelectronics,” Surf. Sci. Rep. 38, 1 (2000).
[CrossRef]

Usp. Fiz. Nauk

L. A. Golovan’, V. Yu. Timoshenko, and P. K. Kashkarov, “Optical properties of porous-system-based nanocomposites,” Usp. Fiz. Nauk 177, 619 (2007). [Phys.–Usp. 50, 595 (2007)].
[CrossRef]

Zh. Eksp. Teor. Fiz.

M. I. Strashnikova, V. I. Vvoznyĭ, V. Ya. Reznichenko, and V. Ya. Gaĭvoronskiĭ, “Optical properties of porous silicon,” Zh. Eksp. Teor. Fiz. 120, 409 (2001). [JETP 93, 363 (2001)].

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