Abstract

This paper discusses the luminescence properties of films of cadmium and zinc chalcogenides obtained by the diffusion of tin from the vapor phase in a closed volume. It is established that the doping of ZnSe, CdS, and CdSe substrates increases the efficiency of the edge emission, while that of ZnTe causes it to disappear and causes a new band to appear in the energy region 1.8–2.1 eV. The absence of luminescence of CdTe  :  Sn films in the 0.6–1.6-eV range is explained by band corrugation.

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  1. V. I. Fistul’, Amphoteric Impurities in Semiconductors (Metallurgiya, Moscow, 1992).
  2. V. I. Fistul’, Dopant Atoms in Semiconductors (Fiz.-Mat. Lit, Moscow, 2004).
  3. D. D. Nedeoglo and A. V. Simashkevich, Electrical and Luminescence Properties of Zinc Selenide (Shtiintsa, Kishinev, 1984).
  4. Ya. V. Tkachenko, “Mekhanizmi defektoutvorennya ta lyuminestsentsii u bezdomishkovikh i legovanikh telurom kristalakh selenidu tsinku,” Dissertation for Candidate of Physicomathematical Sciences [in Ukrainian] (2005).
  5. V. I. Gryvul, V. P. Makhniy, and I. V. Tkachenko, “Defect formation in diffusive layers of ZnSe:Sn and ZnSe:Mg,” Funct. Mater. 14, No. 3, 48 (2007).
  6. V. I. Grivul, V. P. Makhniĭ, and M. M. Sletov, “The origin of edge luminescence in diffusion ZnSe:Sn layers,” Fiz. Tekh. Poluprovodn. 47, 806 (2007). [Semiconductors 47, 784 (2007)].
  7. K. Era and D. W. Langer, “Luminescence of ZnSe near the band edge under strong laser light excitation,” J. Lumin. 1–2, 514 (1970).
    [CrossRef]
  8. V. I. Gavrilenko, A. M. Grekhov, D. V. Korbutyak, and V. G. Litovchenko, Optical Properties of Semiconductors: A Handbook (Naukova Dumka, Kiev, 1987).
  9. S. A. Medvedev, ed., Physics and Chemistry of II–VI Compounds (Mir, Moscow, 1970).
  10. V. P. Makhniĭ and V. I. Grivul, “Diffusion ZnTe:Sn layers with n-type conductivity,” Fiz. Tekh. Poluprovodn. 40, 794 (2006). [Semiconductors 40, 774 (2006)].
  11. V. V. Seredyuk and Yu. F. Vaksman, The Luminescence of Semiconductors (Vishcha Shkola, Kiev–Odessa, 1988).
  12. D. V. Korbutyak, S. V. Mel’nichuk, E. V. Korbut, and M. M. Borisyuk, Telurid kadmiyu: domishkovo-defektni stani ta detektorni vlastivosti (Yavan Fedorov, Kiev, 2000). [in Ukrainian].
  13. V. P. Makhniĭ, “Semiinsulating layers of cadmium telluride,” Zh. Tekh. Fiz. 75, No. 11, 122 (2005). [Tech. Phys. 50, 1513 (2005)].
  14. V. I. Fistul’, Strongly Doped Semiconductors (Nauka, Moscow, 1967).
  15. V. P. Makhniy, M. M. Slyotov, and N. V. Skrypnyk, “Peculiar optical properties of modified surface of monocrystalline cadmium telluride,” Ukr. J. Phys. Opt. 10, No. 1, 54 (2009).
    [CrossRef]

2009 (1)

V. P. Makhniy, M. M. Slyotov, and N. V. Skrypnyk, “Peculiar optical properties of modified surface of monocrystalline cadmium telluride,” Ukr. J. Phys. Opt. 10, No. 1, 54 (2009).
[CrossRef]

2007 (2)

V. I. Gryvul, V. P. Makhniy, and I. V. Tkachenko, “Defect formation in diffusive layers of ZnSe:Sn and ZnSe:Mg,” Funct. Mater. 14, No. 3, 48 (2007).

V. I. Grivul, V. P. Makhniĭ, and M. M. Sletov, “The origin of edge luminescence in diffusion ZnSe:Sn layers,” Fiz. Tekh. Poluprovodn. 47, 806 (2007). [Semiconductors 47, 784 (2007)].

2006 (1)

V. P. Makhniĭ and V. I. Grivul, “Diffusion ZnTe:Sn layers with n-type conductivity,” Fiz. Tekh. Poluprovodn. 40, 794 (2006). [Semiconductors 40, 774 (2006)].

2005 (1)

V. P. Makhniĭ, “Semiinsulating layers of cadmium telluride,” Zh. Tekh. Fiz. 75, No. 11, 122 (2005). [Tech. Phys. 50, 1513 (2005)].

1970 (1)

K. Era and D. W. Langer, “Luminescence of ZnSe near the band edge under strong laser light excitation,” J. Lumin. 1–2, 514 (1970).
[CrossRef]

Borisyuk, M. M.

D. V. Korbutyak, S. V. Mel’nichuk, E. V. Korbut, and M. M. Borisyuk, Telurid kadmiyu: domishkovo-defektni stani ta detektorni vlastivosti (Yavan Fedorov, Kiev, 2000). [in Ukrainian].

Era, K.

K. Era and D. W. Langer, “Luminescence of ZnSe near the band edge under strong laser light excitation,” J. Lumin. 1–2, 514 (1970).
[CrossRef]

Fistul’, V. I.

V. I. Fistul’, Strongly Doped Semiconductors (Nauka, Moscow, 1967).

V. I. Fistul’, Amphoteric Impurities in Semiconductors (Metallurgiya, Moscow, 1992).

V. I. Fistul’, Dopant Atoms in Semiconductors (Fiz.-Mat. Lit, Moscow, 2004).

Gavrilenko, V. I.

V. I. Gavrilenko, A. M. Grekhov, D. V. Korbutyak, and V. G. Litovchenko, Optical Properties of Semiconductors: A Handbook (Naukova Dumka, Kiev, 1987).

Grekhov, A. M.

V. I. Gavrilenko, A. M. Grekhov, D. V. Korbutyak, and V. G. Litovchenko, Optical Properties of Semiconductors: A Handbook (Naukova Dumka, Kiev, 1987).

Grivul, V. I.

V. I. Grivul, V. P. Makhniĭ, and M. M. Sletov, “The origin of edge luminescence in diffusion ZnSe:Sn layers,” Fiz. Tekh. Poluprovodn. 47, 806 (2007). [Semiconductors 47, 784 (2007)].

V. P. Makhniĭ and V. I. Grivul, “Diffusion ZnTe:Sn layers with n-type conductivity,” Fiz. Tekh. Poluprovodn. 40, 794 (2006). [Semiconductors 40, 774 (2006)].

Gryvul, V. I.

V. I. Gryvul, V. P. Makhniy, and I. V. Tkachenko, “Defect formation in diffusive layers of ZnSe:Sn and ZnSe:Mg,” Funct. Mater. 14, No. 3, 48 (2007).

Korbut, E. V.

D. V. Korbutyak, S. V. Mel’nichuk, E. V. Korbut, and M. M. Borisyuk, Telurid kadmiyu: domishkovo-defektni stani ta detektorni vlastivosti (Yavan Fedorov, Kiev, 2000). [in Ukrainian].

Korbutyak, D. V.

D. V. Korbutyak, S. V. Mel’nichuk, E. V. Korbut, and M. M. Borisyuk, Telurid kadmiyu: domishkovo-defektni stani ta detektorni vlastivosti (Yavan Fedorov, Kiev, 2000). [in Ukrainian].

V. I. Gavrilenko, A. M. Grekhov, D. V. Korbutyak, and V. G. Litovchenko, Optical Properties of Semiconductors: A Handbook (Naukova Dumka, Kiev, 1987).

Langer, D. W.

K. Era and D. W. Langer, “Luminescence of ZnSe near the band edge under strong laser light excitation,” J. Lumin. 1–2, 514 (1970).
[CrossRef]

Litovchenko, V. G.

V. I. Gavrilenko, A. M. Grekhov, D. V. Korbutyak, and V. G. Litovchenko, Optical Properties of Semiconductors: A Handbook (Naukova Dumka, Kiev, 1987).

Makhnii, V. P.

V. I. Grivul, V. P. Makhniĭ, and M. M. Sletov, “The origin of edge luminescence in diffusion ZnSe:Sn layers,” Fiz. Tekh. Poluprovodn. 47, 806 (2007). [Semiconductors 47, 784 (2007)].

V. P. Makhniĭ and V. I. Grivul, “Diffusion ZnTe:Sn layers with n-type conductivity,” Fiz. Tekh. Poluprovodn. 40, 794 (2006). [Semiconductors 40, 774 (2006)].

V. P. Makhniĭ, “Semiinsulating layers of cadmium telluride,” Zh. Tekh. Fiz. 75, No. 11, 122 (2005). [Tech. Phys. 50, 1513 (2005)].

Makhniy, V. P.

V. P. Makhniy, M. M. Slyotov, and N. V. Skrypnyk, “Peculiar optical properties of modified surface of monocrystalline cadmium telluride,” Ukr. J. Phys. Opt. 10, No. 1, 54 (2009).
[CrossRef]

V. I. Gryvul, V. P. Makhniy, and I. V. Tkachenko, “Defect formation in diffusive layers of ZnSe:Sn and ZnSe:Mg,” Funct. Mater. 14, No. 3, 48 (2007).

Mel’nichuk, S. V.

D. V. Korbutyak, S. V. Mel’nichuk, E. V. Korbut, and M. M. Borisyuk, Telurid kadmiyu: domishkovo-defektni stani ta detektorni vlastivosti (Yavan Fedorov, Kiev, 2000). [in Ukrainian].

Nedeoglo, D. D.

D. D. Nedeoglo and A. V. Simashkevich, Electrical and Luminescence Properties of Zinc Selenide (Shtiintsa, Kishinev, 1984).

Seredyuk, V. V.

V. V. Seredyuk and Yu. F. Vaksman, The Luminescence of Semiconductors (Vishcha Shkola, Kiev–Odessa, 1988).

Simashkevich, A. V.

D. D. Nedeoglo and A. V. Simashkevich, Electrical and Luminescence Properties of Zinc Selenide (Shtiintsa, Kishinev, 1984).

Skrypnyk, N. V.

V. P. Makhniy, M. M. Slyotov, and N. V. Skrypnyk, “Peculiar optical properties of modified surface of monocrystalline cadmium telluride,” Ukr. J. Phys. Opt. 10, No. 1, 54 (2009).
[CrossRef]

Sletov, M. M.

V. I. Grivul, V. P. Makhniĭ, and M. M. Sletov, “The origin of edge luminescence in diffusion ZnSe:Sn layers,” Fiz. Tekh. Poluprovodn. 47, 806 (2007). [Semiconductors 47, 784 (2007)].

Slyotov, M. M.

V. P. Makhniy, M. M. Slyotov, and N. V. Skrypnyk, “Peculiar optical properties of modified surface of monocrystalline cadmium telluride,” Ukr. J. Phys. Opt. 10, No. 1, 54 (2009).
[CrossRef]

Tkachenko, I. V.

V. I. Gryvul, V. P. Makhniy, and I. V. Tkachenko, “Defect formation in diffusive layers of ZnSe:Sn and ZnSe:Mg,” Funct. Mater. 14, No. 3, 48 (2007).

Tkachenko, Ya. V.

Ya. V. Tkachenko, “Mekhanizmi defektoutvorennya ta lyuminestsentsii u bezdomishkovikh i legovanikh telurom kristalakh selenidu tsinku,” Dissertation for Candidate of Physicomathematical Sciences [in Ukrainian] (2005).

Vaksman, Yu. F.

V. V. Seredyuk and Yu. F. Vaksman, The Luminescence of Semiconductors (Vishcha Shkola, Kiev–Odessa, 1988).

Fiz. Tekh. Poluprovodn. (2)

V. I. Grivul, V. P. Makhniĭ, and M. M. Sletov, “The origin of edge luminescence in diffusion ZnSe:Sn layers,” Fiz. Tekh. Poluprovodn. 47, 806 (2007). [Semiconductors 47, 784 (2007)].

V. P. Makhniĭ and V. I. Grivul, “Diffusion ZnTe:Sn layers with n-type conductivity,” Fiz. Tekh. Poluprovodn. 40, 794 (2006). [Semiconductors 40, 774 (2006)].

Funct. Mater. (1)

V. I. Gryvul, V. P. Makhniy, and I. V. Tkachenko, “Defect formation in diffusive layers of ZnSe:Sn and ZnSe:Mg,” Funct. Mater. 14, No. 3, 48 (2007).

J. Lumin. (1)

K. Era and D. W. Langer, “Luminescence of ZnSe near the band edge under strong laser light excitation,” J. Lumin. 1–2, 514 (1970).
[CrossRef]

Ukr. J. Phys. Opt. (1)

V. P. Makhniy, M. M. Slyotov, and N. V. Skrypnyk, “Peculiar optical properties of modified surface of monocrystalline cadmium telluride,” Ukr. J. Phys. Opt. 10, No. 1, 54 (2009).
[CrossRef]

Zh. Tekh. Fiz. (1)

V. P. Makhniĭ, “Semiinsulating layers of cadmium telluride,” Zh. Tekh. Fiz. 75, No. 11, 122 (2005). [Tech. Phys. 50, 1513 (2005)].

Other (9)

V. I. Fistul’, Strongly Doped Semiconductors (Nauka, Moscow, 1967).

V. V. Seredyuk and Yu. F. Vaksman, The Luminescence of Semiconductors (Vishcha Shkola, Kiev–Odessa, 1988).

D. V. Korbutyak, S. V. Mel’nichuk, E. V. Korbut, and M. M. Borisyuk, Telurid kadmiyu: domishkovo-defektni stani ta detektorni vlastivosti (Yavan Fedorov, Kiev, 2000). [in Ukrainian].

V. I. Gavrilenko, A. M. Grekhov, D. V. Korbutyak, and V. G. Litovchenko, Optical Properties of Semiconductors: A Handbook (Naukova Dumka, Kiev, 1987).

S. A. Medvedev, ed., Physics and Chemistry of II–VI Compounds (Mir, Moscow, 1970).

V. I. Fistul’, Amphoteric Impurities in Semiconductors (Metallurgiya, Moscow, 1992).

V. I. Fistul’, Dopant Atoms in Semiconductors (Fiz.-Mat. Lit, Moscow, 2004).

D. D. Nedeoglo and A. V. Simashkevich, Electrical and Luminescence Properties of Zinc Selenide (Shtiintsa, Kishinev, 1984).

Ya. V. Tkachenko, “Mekhanizmi defektoutvorennya ta lyuminestsentsii u bezdomishkovikh i legovanikh telurom kristalakh selenidu tsinku,” Dissertation for Candidate of Physicomathematical Sciences [in Ukrainian] (2005).

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